One-dimensional spin texture of Bi(441); Quantum Spin Hall properties without a topological insulator
Authors:
M. Bianchi,
F. Song,
S. Cooil,
A. F. Monsen,
E. Wahlstrom,
J. A. Miwa,
E. D. L. Rienks,
D. A. Evans,
A. Strozecka,
J. I. Pascual,
M. Leandersson,
T. Balasubramanian,
Ph. Hofmann,
J. W. Wells
Abstract:
The high index (441) surface of bismuth has been studied using Scanning Tunnelling Microscopy (STM), Angle Resolved Photoemission Spectroscopy (APRES) and spin-resolved ARPES. The surface is strongly corrugated, exposing a regular array of (110)-like terraces. Two surface localised states are observed, both of which are linearly dispersing in one in-plane direction ($k_x$), and dispersionless in t…
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The high index (441) surface of bismuth has been studied using Scanning Tunnelling Microscopy (STM), Angle Resolved Photoemission Spectroscopy (APRES) and spin-resolved ARPES. The surface is strongly corrugated, exposing a regular array of (110)-like terraces. Two surface localised states are observed, both of which are linearly dispersing in one in-plane direction ($k_x$), and dispersionless in the orthogonal in-plane direction ($k_y$), and both of which have a Dirac-like crossing at $k_x$=0. Spin ARPES reveals a strong in-plane polarisation, consistent with Rashba-like spin-orbit coupling. One state has a strong out-of-plane spin component, which matches with the miscut angle, suggesting its {possible} origin as an edge-state. The electronic structure of Bi(441) has significant similarities with topological insulator surface states and is expected to support one dimensional Quantum Spin Hall-like coupled spin-charge transport properties with inhibited backscattering, without requiring a topological insulator bulk.
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Submitted 26 June, 2015;
originally announced June 2015.
3D nanostructuring of La0.7Sr0.3MnO3 thin film surfaces by scanning tunnelling microscopy
Authors:
Yun Liu,
Å. F. Monsen,
J. E. Boschker,
E. Wahlström,
A. Borg,
T. Tybell
Abstract:
Nanoscale 3D surface modifications, by scanning tunneling microscopy under ambient conditions, of La0.7Sr0.3MnO3 thin films have been performed. It was demonstrated that there are well defined combinations of bias voltages and scan speeds which allow for controlled surface structuring. Lateral structures with sizes down to 1.5 nm are possible to obtain. Moreover, it is possible to reproducibly c…
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Nanoscale 3D surface modifications, by scanning tunneling microscopy under ambient conditions, of La0.7Sr0.3MnO3 thin films have been performed. It was demonstrated that there are well defined combinations of bias voltages and scan speeds which allow for controlled surface structuring. Lateral structures with sizes down to 1.5 nm are possible to obtain. Moreover, it is possible to reproducibly control the depth of etching with half a unit cell precision, enabling design of 3D surface structures and control of the surface termination of La0.7Sr0.3MnO3 through etching.
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Submitted 1 June, 2010; v1 submitted 22 April, 2009;
originally announced April 2009.
