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Polarization spontaneous and piezo: fundamentals and their implementation in ab initio calculations
Authors:
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Izabella Grzegory,
Eva Monroy,
Agata Kaminska,
Stanislaw Krukowski
Abstract:
Fundamental properties of spontaneous and piezo polarization are reformulated and critically reviewed. It was demonstrated that Landau definition of polarization as a dipole density could be used to the infinite systems. The difference between the bulk polarization and surface polarity are distinguished thus creating clear identification of both components. The local model of spontaneous polarizat…
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Fundamental properties of spontaneous and piezo polarization are reformulated and critically reviewed. It was demonstrated that Landau definition of polarization as a dipole density could be used to the infinite systems. The difference between the bulk polarization and surface polarity are distinguished thus creating clear identification of both components. The local model of spontaneous polarization was created and used to calculate spontaneous polarization as the electric dipole density. It was shown that the proposed local model correctly predicts c-axis spontaneous polarization values of the nitride wurtzite semiconductors. It was also shown that the proposed model predicts zero polarization in the plane perpendicular to the c-axis, in accordance with symmetry requirements. In addition, the model results are in accordance with polarization equal to zero for zinc blende lattice. These data confirm the basic correctness of the proposed model. The spontaneous polarization values obtained for all wurtzite III nitrides (BN, AlN, GaN and InN) are in basic agreement with the earlier calculations using Berry phase and slab models of Bernardini et al. {Bernardini et al. Phys Rev B 56 (2001) R10024 & 63 (2001) 193201} but not with Dreyer et al. {Dreyer et al. Phys. Rev X 6 (2016) 021038}. Wurtzite nitride superlattices ab initio calculations were performed to derive polarization-induced fields in the coherently strained lattices showing good agreement with the polarization values. The strained superlattice data were used to determine the piezoelectric parameters of wurtzite nitrides obtaining the values that were in basic agreement with the earlier data. Zinc blende superlattices were also modeled using ab initio calculations showing results that are in agreement with the absence of polarization of all nitrides in zinc blende symmetry.
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Submitted 1 July, 2024;
originally announced July 2024.
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AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators
Authors:
N. Buatip,
T. Auzelle,
P. John,
S. Rauwerdink,
M. Sohdi,
M. Saluan,
B. Fernandez,
E. Monroy,
D. Mornex,
C. R. Bowen,
R. Songmuang
Abstract:
In this study, detailed analysis of the direct piezo-response of AlN nanowire-based vertically integrated nanogenerators (VINGs) is undertaken as a function of mechanical excitation frequency. We show that the piezo-charge, piezo-voltage, and impedance measured at the same position of the devices can be directly correlated through an equivalent circuit model, in the whole frequency range of invest…
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In this study, detailed analysis of the direct piezo-response of AlN nanowire-based vertically integrated nanogenerators (VINGs) is undertaken as a function of mechanical excitation frequency. We show that the piezo-charge, piezo-voltage, and impedance measured at the same position of the devices can be directly correlated through an equivalent circuit model, in the whole frequency range of investigation. Our presented results are utilized to determine the performance figures of merit (FoM) of nanowire-based VINGs, namely the piezoelectric voltage constant (g) for sensing, and the product d g for energy harvesting, where d is the piezoelectric charge constant. By comparison of these metrics with those of freestanding single crystal GaN and quartz substrates, as well as sputtered AlN thin films, we suggest that the nanowires can outperform their rigid counterparts in terms of mechanical sensing and energy generation. This work provides experimental guidelines for understanding the direct piezo-characteristics of VINGs and facilitates a quantitative comparison between nanostructured piezoelectric devices fabricated using different materials or architectures.
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Submitted 1 June, 2024; v1 submitted 15 February, 2024;
originally announced February 2024.
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Coulomb contribution to Shockley-Read-Hall (SRH) recombination
Authors:
Konrad Sakowski,
Pawel Strak,
Pawel Kempisty,
Jacek Piechota,
Izabella Grzegory,
Piotr Perlin,
Eva Monroy,
Agata Kaminska,
Stanislaw Krukowski
Abstract:
Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates.…
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Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that in the typical semiconductor device or semiconductor medium, the SRH recombination cannot be neglected at low temperatures. The SRH is more effective in the case of low doped semiconductors. Effective screening by mobile carrier density could reduce the effect, leading to SRH rate increase.
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Submitted 26 January, 2024; v1 submitted 18 October, 2023;
originally announced October 2023.
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Effect of extended defects on AlGaN QDs for electron-pumped UV-emitters
Authors:
Jesus Cañas,
Névine Rochat,
Adeline Grenier,
Audrey Jannaud,
Zineb Saghi,
Jean-Luc Rouviere,
Edith Bellet-Amalric,
Anjali Harikumar,
Catherine Bougerol,
Lorenzo Rigutti,
Eva Monroy
Abstract:
We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emission at longer wavelengths is linked to the presence of cone-like defects starting at the first AlN buffer/superlattice interface and propagating vertically. These defects are associated with a dislocation that produces s…
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We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emission at longer wavelengths is linked to the presence of cone-like defects starting at the first AlN buffer/superlattice interface and propagating vertically. These defects are associated with a dislocation that produces strong shear strain, which favors the formation of 30° faceted pits. The cone-like structures present Ga enrichment at the boundary facets and larger QDs within the defect. The bimodality is attributed to the differing dot size/composition within the defects and at the defect boundaries, which is confirmed by the correlation of microscopy results and Schrödinger-Poisson calculations.
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Submitted 6 October, 2023;
originally announced October 2023.
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Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture
Authors:
E. Akar,
I. Dimkou,
A. Ajay,
Martien I. den Hertog,
E. Monroy
Abstract:
The interest in nanowire photodetectors stems from their potential to improve the performance of a variety of devices, including solar cells, cameras, sensors, and communication systems. Implementing devices based on nanowire ensembles requires a planarization process which must be conceived to preserve the advantages of the nanowire geometry. This is particularly challenging in the ultraviolet (U…
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The interest in nanowire photodetectors stems from their potential to improve the performance of a variety of devices, including solar cells, cameras, sensors, and communication systems. Implementing devices based on nanowire ensembles requires a planarization process which must be conceived to preserve the advantages of the nanowire geometry. This is particularly challenging in the ultraviolet (UV) range, where spin coating with hydrogen silsesquioxane (HSQ) appears as an interesting approach in terms of transmittance and refractive index. Here, we report a comprehensive study on UV photodetectors based on GaN or AlGaN/AlN nanowire ensembles encapsulated in HSQ. We show that this material is efficient for passivating the nanowire surface, it introduces a compressive strain in the nanowires and preserves their radiative efficiency. We discuss the final performance of planarized UV photodetectors based on three kinds of nanowire ensembles: (i) non-intentionally-doped (nid) GaN nanowires, (ii) Ge-doped GaN nanowires, and (iii) nid GaN nanowires terminated with an AlGaN/AlN superlattice. The incorporation of the superlattice allows tuning the spectral response with bias, which can enhance the carrier collection from the AlGaN/AlN superlattice or from the GaN stem. In all the cases, the performance of the planarized devices remains determined by the nanowire nature, since their characteristics in terms of linearity and spectral selectivity are closer to those demonstrated in single nanowires than those of planar devices. Thus, the visible rejection is several orders of magnitude and there is no indication of persistent photocurrent, which makes all the samples suitable for UV-selective photodetection applications.
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Submitted 8 June, 2023;
originally announced June 2023.
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AlGaN/AlN Stranski-Krastanov quantum dots for highly efficient electron beam pumped emitters: The role of miniaturization and composition to attain far UV-C emission
Authors:
Jesus Cañas,
Anjali Harikumar,
Stephen T. Purcell,
Nevine Rochat,
Adeline Grenier,
Audrey Jannaud,
Edith Bellet-Amalric,
Fabrice Donatini,
Eva Monroy
Abstract:
Conventional ultraviolet (UV) lamps for disinfection emit radiation in the 255-270 nm range, which poses a high risk of causing cancer and cataracts. To address these concerns, solid-state far UV-C sources emitting below 240 nm are gaining attention as a safe and sustainable disinfection solution for occupied spaces. Here, we delve into the extension of the AlxGa1-xN/AlN quantum dot (QD) technolog…
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Conventional ultraviolet (UV) lamps for disinfection emit radiation in the 255-270 nm range, which poses a high risk of causing cancer and cataracts. To address these concerns, solid-state far UV-C sources emitting below 240 nm are gaining attention as a safe and sustainable disinfection solution for occupied spaces. Here, we delve into the extension of the AlxGa1-xN/AlN quantum dot (QD) technology towards the far UV-C range, which presents various challenges associated with the reduction of the lattice mismatch and band offset when Al is incorporated in the QDs. We explore the structural and optical impact of increasing the Al content through the increase of the Al flux and eventual correction of the Ga flux to maintain a constant metal/N ratio. We also examine the impact of extreme miniaturization of the QDs, achieved through a reduction of their growth time, on the spectral behavior and internal quantum efficiency (IQE). The high Al content results in QDs with a reduced aspect ratio (height/diameter) and thicker wetting layer when compared to the GaN/AlN system. Self-assembled QDs grown with a metal/N ratio ranging from 0.5 to 0.8 show an IQE around 50%, independent of the Al content (up to 65%) or emission wavelength (300-230 nm). However, samples emitting at wavelengths below 270 nm exhibit a bimodal luminescence associated with inhomogeneous in-plane emission attributed to fluctuations of the QD shape associated with extended defects. Reducing the QD size exacerbates the bimodality without reducing the emission wavelength. The power efficiencies under electron beam pum** range from 0.4% to 1%, with clear potential for improvement through surface treatments that enhance light extraction efficiency.
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Submitted 25 May, 2023;
originally announced May 2023.
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Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM
Authors:
Bruno C. da Silva,
Zahra S. Momtaz,
Eva Monroy,
Hanako Okuno,
Jean-Luc Rouviere,
David Cooper,
Martien I. den-Hertog
Abstract:
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up the possibility of studying the electrostatic properties of a p-n junction with nm-scale spatial resolution. The complete description of a p-n junction must tak…
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A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up the possibility of studying the electrostatic properties of a p-n junction with nm-scale spatial resolution. The complete description of a p-n junction must take into account the precise evolution of the concentration of dopants around the junction, since the sharpness of the dopant transition directly influences the built-in potential and the maximum electric field. Here, a contacted silicon p-n junction is studied through in-situ biased 4D-STEM. Measurements of electric field, built-in voltage, depletion region width and charge density in the space charge region are combined with analytical equations as well as finite-element simulations in order to evaluate the quality of the junction interface. The nominally-symmetric, highly doped ($N_A = N_D = 9\space x \space10^{18} cm^{-3}$) junction presents an electric field and built-in voltage much lower than expected for an abrupt junction. These experimental results are consistent with electron holography data. All measured junction parameters are compatible with the presence of an intermediate region with a graded profile of the dopants at the p-n interface. This hypothesis is also consistent with the evolution of the electric field with bias. These results demonstrate that in-situ biased 4D-STEM enables a better understanding of the electrical properties of semiconductor p-n junctions with nm-scale resolution.
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Submitted 20 September, 2022;
originally announced September 2022.
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Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets
Authors:
Sergi Cuesta,
Lou Denaix,
Florian Castioni,
Le Si Dang,
Eva Monroy
Abstract:
We report a two-step process to obtain smooth and vertical {10-10} m-plane facets in AlGaN/GaN separate confinement heterostructures designed to fabricate UV lasers emitting at 355 nm. The process consists in a dry etching by RIE-ICP combined with a crystallographic-selective wet etching process using a KOH-based solution. The anisotropy in the wet etching rates between the different crystallograp…
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We report a two-step process to obtain smooth and vertical {10-10} m-plane facets in AlGaN/GaN separate confinement heterostructures designed to fabricate UV lasers emitting at 355 nm. The process consists in a dry etching by RIE-ICP combined with a crystallographic-selective wet etching process using a KOH-based solution. The anisotropy in the wet etching rates between the different crystallographic planes of the AlGaN structure, allows the fabrication of flat and parallel facets without a degradation of the multilayered ensemble. The optical performance of the lasers display a major improved when using the two-step process for the definition of the cavity, in comparison to cavities fabricated by mechanical cleaving, with the lasing threshold under optical pum** being reduced to almost half.
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Submitted 30 March, 2022;
originally announced March 2022.
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Comparison of the material quality of AlxIn1-xN (x ~ 0-0.50) films deposited on Si (100) and (111) by reactive RF sputtering
Authors:
M. Sun,
R. Blasco,
M. de la Mata,
S. I. Molina,
A. Ajay,
E. Monroy,
S. Valdueza-Felip,
F. B. Naranjo
Abstract:
Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To modulate their Al content, the Al RF power was varied from 0 to 225 W, whereas the In RF power and deposition temperature were fixed at 30 W and 300oC, respectively. X-ray diffraction measurements reveal a c-axis-oriented w…
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Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To modulate their Al content, the Al RF power was varied from 0 to 225 W, whereas the In RF power and deposition temperature were fixed at 30 W and 300oC, respectively. X-ray diffraction measurements reveal a c-axis-oriented wurtzite structure with no phase separation regardless of the Al content (x = 0-0.50), which increases with the Al power supply. The surface morphology of the AlxIn1-xN layers improves with increasing Al content and it is similar for samples grown on both Si substrates (the root-mean-square roughness decreases from 12 nm to 2.5 nm). Furthermore, from TEM images we notice a similar grain-like columnar morphology and defect density on samples deposited on both Si substrates under the same conditions. Simultaneously grown AlxIn1-xN-on-sapphire samples point to a residual n-type carrier concentration in the 1020-1021 cm-3 range. The optical band gap energy of these layers evolves from 1.75 eV to 2.56 eV with increasing Al content, consistent with the blue shift of their low-temperature photoluminescence. In general, the material quality of the AlxIn1-xN films on Si is similar for both crystallographic orientations. Nonetheless, samples deposited on sapphire show an improved structural and morphological characteristic likely due to the lower difference in lattice constants between the nitride and the sapphire substrate.
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Submitted 23 December, 2021;
originally announced December 2021.
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Decorrelation of internal quantum efficiency and lasing threshold in AlGaN-based separate confinement heterostructures for UV emission
Authors:
Sergi Cuesta,
Lou Denaix,
Le Si Dang,
Eva Monroy
Abstract:
In this paper, we study the internal quantum efficiency and lasing threshold of AlGaN/GaN separate confinement heterostructures designed for ultraviolet laser emission. We discuss the effect of carrier localization and carrier diffusion on the optical performance. The implementation of graded index separate confinement heterostructures results in an improved carrier collection at the multi-quantum…
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In this paper, we study the internal quantum efficiency and lasing threshold of AlGaN/GaN separate confinement heterostructures designed for ultraviolet laser emission. We discuss the effect of carrier localization and carrier diffusion on the optical performance. The implementation of graded index separate confinement heterostructures results in an improved carrier collection at the multi-quantum well, which facilitates population inversion and reduces the lasing threshold. However, this improvement is not correlated with the internal quantum efficiency of the spontaneous emission. We show that carrier localization at alloy inhomogeneities results in an enhancement of the radiative efficiency but does not reduce the laser threshold, more sensitive to the carrier injection efficiency.
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Submitted 22 September, 2021;
originally announced September 2021.
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Optical net gain measurement on Al$_{0.07}$Ga$_{0.93}$N/GaN multi-quantum well
Authors:
Quang Minh Thai,
Sergi Cuesta,
Lou Denaix,
Sylvain Hermelin,
Olivier Boisron,
Stephen T. Purcell,
Le Si Dang,
Eva Monroy
Abstract:
We present net gain measurements at room temperature in Al$_{0.07}$Ga$_{0.93}$N/GaN 10-period multi-quantum well emitting at 367 nm, using the variable stripe length method. Measurements were conducted at two different positions on the sample, where the net gain threshold was attained at 218 kW/cm$^{2}$ and 403 kW/cm$^{2}$. At the position with higher threshold, we observed an anomalous amplificat…
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We present net gain measurements at room temperature in Al$_{0.07}$Ga$_{0.93}$N/GaN 10-period multi-quantum well emitting at 367 nm, using the variable stripe length method. Measurements were conducted at two different positions on the sample, where the net gain threshold was attained at 218 kW/cm$^{2}$ and 403 kW/cm$^{2}$. At the position with higher threshold, we observed an anomalous amplification of the photoluminescence intensity that occurs for long stripe lengths (superior to 400 $μ$m) and high pum** power (superior to 550 kW/cm$^{2}$), leading to an overestimation of the gain value. We attribute such a phenomenon to the feedback provided by the reflection from cracks, which were created during the epitaxial growth due to the strong lattice mismatch between different layers. The highest gain value without anomalous amplification was 131 cm$^{-1}$, obtained at the maximum pum** power density of the experimental setup (743 kW/cm$^{2}$). Using the intrinsic efficiency limit of the cathodoluminescence process, we estimate a lower limit for electron beam pumped laser threshold at room temperature of 390 kW/cm$^{2}$ for this multi-quantum well structure.
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Submitted 4 August, 2021; v1 submitted 1 August, 2021;
originally announced August 2021.
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A Photonic Atom Probe Analysis of the Effect of Extended and Point Defects on the Luminescence of InGaN/GaN Quantum Dots
Authors:
I. Dimkou,
J. Houard,
N. Rochat,
P. Dalapati,
E. Di Russo,
D. Cooper,
A. Grenier,
E. Monroy,
L. Rigutti
Abstract:
We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 layers of QDs. Decreasing the substrate temperature along the growth axis leads to the proliferation of structural defects. However, the luminescence intensity increases towards the surface, in spite of the higher density…
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We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 layers of QDs. Decreasing the substrate temperature along the growth axis leads to the proliferation of structural defects. However, the luminescence intensity increases towards the surface, in spite of the higher density of threading dislocations, revealing that the QD layers closer to the substrate behave as traps for non-radiative point defects. During atom probe tomography experiments combined with in-situ micro-photoluminescence, it was possible to isolate the optical emission of a single QD located in the topmost QD stack, closer to the sample surface. The single QD emission line displayed a spectral shift during the experiment confirming the relaxation of elastic strain due to material evaporation during atom probe tomography.
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Submitted 7 June, 2021;
originally announced June 2021.
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Polarization do** ab initio verification of the concept charge conservation and nonlocality
Authors:
Ashfaq Ahmad,
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Yoshihiro Kangawa,
Izabella Grzegory,
Michal Leszczynski,
Zbigniew R. Zytkiewicz,
Grzegorz Muziol,
Eva Monroy,
Stanislaw Krukowski,
Agata Kaminska
Abstract:
In this work, we study the emergence of polarization do** in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allo…
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In this work, we study the emergence of polarization do** in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allows obtaining technically viable mobile charge density for optoelectronic devices without impurity do** (donors or acceptors). Therefore, it provides an additional tool for the device designer, with the potential to attain high conductivities: high carrier concentrations can be obtained even in materials with high dopant ionization energies, and the mobility is not limited by scattering at ionized impurities.
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Submitted 22 March, 2022; v1 submitted 2 June, 2021;
originally announced June 2021.
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AlGaN/GaN asymmetric graded-index separate confinement heterostructures designed for electron-beam pumped UV lasers
Authors:
Sergi Cuesta,
Yoann Curé,
Fabrice Donatini,
Lou Denaix,
Edith Bellet-Amalric,
Catherine Bougerol,
Vincent Grenier,
Quang-Minh Thai,
Gilles Nogues,
Stephen T. Purcell,
Le Si Dang,
Eva Monroy
Abstract:
We present a study of undoped AlGaN/GaN separate confinement heterostructures designed to operate as electron beam pumped ultraviolet lasers. We discuss the effect of spontaneous and piezoelectric polarization on carrier diffusion, comparing the results of cathodoluminescence with electronic simulations of the band structure and Monte Carlo calculations of the electron trajectories. Carrier collec…
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We present a study of undoped AlGaN/GaN separate confinement heterostructures designed to operate as electron beam pumped ultraviolet lasers. We discuss the effect of spontaneous and piezoelectric polarization on carrier diffusion, comparing the results of cathodoluminescence with electronic simulations of the band structure and Monte Carlo calculations of the electron trajectories. Carrier collection is significantly improved using an asymmetric graded-index separate confinement heterostructure (GRINSCH). The graded layers avoid potential barriers induced by polarization differences in the heterostructure and serve as strain transition buffers which reduce the mosaicity of the active region and the linewidth of spontaneous emission.
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Submitted 16 March, 2021; v1 submitted 6 January, 2021;
originally announced January 2021.
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Solubility limit of Ge Dopants in AlGaN: a Chemical and Microstructural Investigation down to the Nanoscale
Authors:
C. Bougerol,
E. Robin,
E. Di Russo,
E. Bellet-Amalric,
V. Grenier,
A. Ajay,
L. Rigutti,
E. Monroy
Abstract:
Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural analysis of Ge-doped AlGaN samples with Al mole fraction from x=0 to 1, and nominal do** level in the range of 1E20 cm-3, together with the measurement of Ge concentration and its spatial distribution down to the nm scale…
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Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural analysis of Ge-doped AlGaN samples with Al mole fraction from x=0 to 1, and nominal do** level in the range of 1E20 cm-3, together with the measurement of Ge concentration and its spatial distribution down to the nm scale. AlGaN:Ge samples with x smaller or equal to 0.2 do not present any sign of inhomogeneity. However, samples with x > 0.4 display micrometer-size Ge crystallites at the surface. Ge segregation is not restricted to the surface: Ge-rich regions with a size of tens of nanometers are observed inside the AlGaN:Ge layers, generally associated with Ga-rich regions around structural defects. With this local exceptions, the AlGaN:Ge matrix present an homogenous Ge composition which can be significantly lower than the nominal do** level. Precise measurements of Ge in the matrix provide a view of the solubility diagram of Ge in AlGaN as a function of the Al mole fraction. The solubility of Ge in AlN is extremely low. Between AlN and GaN, the solubility increases linearly with the Ga mole fraction in the ternary alloy, which suggests that the Ge incorporation takes place by substitution of Ga atoms only. The maximum percentage of Ga sites occupied by Ge saturates around 1%. The solubility issues and Ge segregation phenomena at different length scales likely play a role in the efficiency of Ge as n-type AlGaN dopant, even at Al concentrations where Ge DX centers are not expected to manifest. Therefore, this information can have direct impact in the performance of Ge-doped AlGaN light emitting diodes, particularly in the spectral range for disinfection (around 260 nm), which requires heavily-doped alloys with high Al mole fraction.
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Submitted 26 October, 2020;
originally announced October 2020.
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Internal quantum efficiency of AlGaN/AlN quantum dot superlattices for electron-pumped ultraviolet sources
Authors:
A. Harikumar,
F. Donatini,
C. Bougerol,
E. Bellet-Amalric,
Q. -M. Thai,
C. Dujardin,
I. Dimkou,
S. T. Purcell,
E. Monroy
Abstract:
In this paper, we describe the growth and characterization of 530-nm-thick superlattices (100 periods) of AlxGa1-xN/AlN (x = 0, 0.1) Stranski-Krastanov quantum dots for application as the active region of electron-beam pumped ultraviolet lamps. Highly dense (>10e11 cm-2) quantum dot layers are deposited by molecular beam epitaxy, and we explore the effect of the III/V ratio during the growth proce…
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In this paper, we describe the growth and characterization of 530-nm-thick superlattices (100 periods) of AlxGa1-xN/AlN (x = 0, 0.1) Stranski-Krastanov quantum dots for application as the active region of electron-beam pumped ultraviolet lamps. Highly dense (>10e11 cm-2) quantum dot layers are deposited by molecular beam epitaxy, and we explore the effect of the III/V ratio during the growth process on their optical performance. The study considers structures emitting in the 244-335 nm range at room temperature, with a relative linewidth in the 6-11% range, mainly due to the QD diameter dispersion inherent in self-assembled growth. Under electron pum**, the emission efficiency remains constant for acceleration voltages below 9 kV. The correlation of this threshold with the total thickness of the superlattice and the penetration depth of the electron beam confirms the homogeneity of the nanostructures along the growth axis. Below the threshold, the emission intensity scales linearly with the injected current. The internal quantum efficiency is characterized at low injection, which reveals the material properties in terms of non-radiative processes, and high injection, which emulates carrier injection in operation conditions. In quantum dots synthesized with III/V ratio < 0.75, the internal quantum efficiency remains around 50% from low injection to pum** power densities as high as 200 kW/cm2, being the first kind of nanostructures that present such stable behaviour.
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Submitted 29 May, 2020;
originally announced May 2020.
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Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters
Authors:
Maria Spies,
Akhil Ajay,
Eva Monroy,
Bruno Gayral,
M. den Hertog
Abstract:
Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-optical behaviour of such quantum objects without correlated studies of the structural and optical properties on the same nanowire. In this work, we study the spectral tunability of the emission of a single quantum dot in…
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Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-optical behaviour of such quantum objects without correlated studies of the structural and optical properties on the same nanowire. In this work, we study the spectral tunability of the emission of a single quantum dot in a GaN nanowire by applying external bias. The nanowires are dispersed and contacted on electron beam transparent Si3N4 membranes, so that transmission electron microscopy observations, photocurrent and micro-photoluminescence measurements under bias can be performed on the same specimen. The emission from a single dot blue or red shifts when the external electric field compensates or enhances the internal electric field generated by the spontaneous and piezoelectric polarization. A detailed study of two nanowire specimens emitting at 327.5 nm and 307.5 nm shows spectral shifts at rates of 20 and 12 meV/V, respectively. Theoretical calculations facilitated by the modelling of the
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Submitted 6 February, 2020;
originally announced February 2020.
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Correlated and in-situ electrical transmission electron microscopy studies and related membrane fabrication
Authors:
Maria Spies,
Zahra Sadre-Momtaz,
Jonas Lähnemann,
Minh Anh Luong,
Bruno Fernandez,
Thierry Fournier,
Eva Monroy,
Martien I. den Hertog
Abstract:
Understanding the interplay between the structure, composition and opto-electronic properties of semiconductor nano-objects requires combining transmission electron microscopy (TEM) based techniques with electrical and optical measurements on the very same specimen. Recent developments in TEM technologies allow not only the identification and in-situ electrical characterization of a particular obj…
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Understanding the interplay between the structure, composition and opto-electronic properties of semiconductor nano-objects requires combining transmission electron microscopy (TEM) based techniques with electrical and optical measurements on the very same specimen. Recent developments in TEM technologies allow not only the identification and in-situ electrical characterization of a particular object, but also the direct visualization of its modification in-situ by techniques such as Joule heating. Over the past years, we have carried out a number of studies in these fields that are reviewed in this contribution. In particular, we discuss here i) correlated studies where the same unique object is characterized electro-optically and by TEM, ii) in-situ Joule heating studies where a solid-state metal-semiconductor reaction is monitored in the TEM, and iii) in-situ biasing studies to better understand the electrical properties of contacted single nanowires. In addition, we provide detailed fabrication steps for the silicon nitride membranes crucial to these correlated and in-situ measurements.
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Submitted 2 December, 2021; v1 submitted 24 January, 2020;
originally announced January 2020.
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Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources
Authors:
I. Dimkou,
A. Harikumar,
F. Donatini,
J. Lähnemann,
M. I. den Hertog,
C. Bougerol,
E. Bellet-Amalric,
N. Mollard,
A. Ajay,
G. Ledoux,
S. T. Purcell,
E. Monroy
Abstract:
In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowires for application in electron-pumped ultraviolet sources. The optical performance of GaN/AlN superlattices on nanowires is compared with the emission of planar GaN/AlN superlattices with the same periodicity and thickne…
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In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowires for application in electron-pumped ultraviolet sources. The optical performance of GaN/AlN superlattices on nanowires is compared with the emission of planar GaN/AlN superlattices with the same periodicity and thickness grown on bulk GaN substrates along the N-polar and metal-polar crystallographic axes. The nanowire samples are less sensitive to nonradiative recombination than planar layers, attaining internal quantum efficiencies (IQE) in excess of 60% at room temperature even under low injection conditions. The IQE remains stable for higher excitation power densities, up to 50 kW/cm2. We demonstrate that the nanowire superlattice is long enough to collect the electron-hole pairs generated by an electron beam with an acceleration voltage VA = 5 kV. At such VA, the light emitted from the nanowire ensemble does not show any sign of quenching under constant electron beam excitation (tested for an excitation power density around 8 kW/cm2 over the scale of minutes). Varying the dot/barrier thickness ratio and the Al content in the dots, the nanowire peak emission can be tuned in the range from 340 to 258 nm. Keywords: GaN, AlN, nanowire, ultraviolet
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Submitted 29 November, 2019;
originally announced November 2019.
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Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors
Authors:
Maria Spies,
Jakub Polaczyński,
Akhil Ajay,
Dipankar Kalita,
Jonas Lähnemann,
Bruno Gayral,
Martien I. den Hertog,
Eva Monroy
Abstract:
Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumina…
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Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current-voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the im**ing optical power when the nanowire diameter is below a certain threshold ($\approx$ 80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.
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Submitted 29 April, 2019;
originally announced April 2019.
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Nanowire photodetectors based on wurtzite semiconductor heterostructures
Authors:
Maria Spies,
Eva Monroy
Abstract:
Using nanowires for photodetection constitutes an opportunity to enhance the absorption efficiency while reducing the electrical cross-section of the device. They present interesting features like compatibility with silicon substrates, which offers the possibility of integrating detector and readout circuitry, and facilitates their transfer to flexible substrates. Within a nanowire, it is possible…
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Using nanowires for photodetection constitutes an opportunity to enhance the absorption efficiency while reducing the electrical cross-section of the device. They present interesting features like compatibility with silicon substrates, which offers the possibility of integrating detector and readout circuitry, and facilitates their transfer to flexible substrates. Within a nanowire, it is possible to implement axial and radial (core-shell) heterostructures. These two types can be combined to obtain three-dimensional carrier confinement (dot-in-a-wire). The incorporation of heterostructures in nanowire photodetectors opens interesting opportunities of application and performance improvement. Heterojunctions or type-II heterostructures favor the separation of the photogenerated electrons and holes, and the implementation of quantum dots in a nanowire can be applied to the development of quantum photodetectors. This paper provides a general review of latest progresses in nanowire photodetectors, including single nanowires and heterostructured nanowires.
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Submitted 27 April, 2019;
originally announced April 2019.
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Effect of Ge-do** on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures
Authors:
Caroline B. Lim,
Akhil Ajay,
Jonas Lähnemann,
Catherine Bougerol,
Eva Monroy
Abstract:
This paper assesses the effects of Ge-do** on the structural and optical (band-to-band and intersubband (ISB)) properties of GaN/AlGaN multi-quantum wells (QWs) designed to display ISB absorption in the short-wave, mid- and far-infrared ranges (SWIR, MIR, and FIR, respectively). The standard c-plane crystallographic orientation is considered for wells absorbing in the SWIR and MIR spectral regio…
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This paper assesses the effects of Ge-do** on the structural and optical (band-to-band and intersubband (ISB)) properties of GaN/AlGaN multi-quantum wells (QWs) designed to display ISB absorption in the short-wave, mid- and far-infrared ranges (SWIR, MIR, and FIR, respectively). The standard c-plane crystallographic orientation is considered for wells absorbing in the SWIR and MIR spectral regions, whereas the FIR structures are grown along the nonpolar m-axis. In all cases, we compare the characteristics of Ge-doped and Si-doped samples with the same design and various do** levels. The use of Ge appears to improve the mosaicity of the highly lattice-mismatched GaN/AlN heterostructures. However, when reducing the lattice mismatch, the mosaicity is rather determined by the substrate and does not show any dependence on the dopant nature or concentration. From the optical point of view, by increasing the dopant density, we observe a blueshift of the photoluminescence in polar samples due to the screening of the internal electric field by free carriers. In the ISB absorption, on the other hand, there is a systematic improvement of the linewidth when using Ge as a dopant for high do** levels, whatever the spectral region under consideration (i.e. different QW size, barrier composition and crystallographic orientation).
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Submitted 22 March, 2019;
originally announced March 2019.
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On intrinsic Stokes shift in wide GaN/AlGaN polar quantum wells
Authors:
M. Jarema,
M. Gladysiewicz,
E. Zdanowicz,
E. Bellet-Amalric,
E. Monroy,
R. Kudrawiec
Abstract:
The interpretation of electromodulated reflectance (ER) spectra of polar quantum wells (QWs) is difficult even for homogeneous structures because of the built-in electric field. In this work we compare the room-temperature contactless ER and photoluminescence (PL) spectra of polar GaN/AlGaN QWs with the effective-mass band structure calculations. We show that the emission from the ground state tra…
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The interpretation of electromodulated reflectance (ER) spectra of polar quantum wells (QWs) is difficult even for homogeneous structures because of the built-in electric field. In this work we compare the room-temperature contactless ER and photoluminescence (PL) spectra of polar GaN/AlGaN QWs with the effective-mass band structure calculations. We show that the emission from the ground state transition is observed in PL but the ER is dominated by transitions between excited states. This effect results from the polarization-induced built-in electric field in QW that breaks the selection rules that apply to square-like QWs, allowing many optical transitions which cannot be separately distinguished in the ER spectrum. We develop the guidelines for the identification of optical transitions observed in PL and ER spectra. We conclude that an intrinsic Stokes shift, i.e., a shift between emission and absorption, is present even for homogeneous GaN/AlGaN QWs with large width, where the electron-hole wavefunction overlap for the fundamental transition is weak.
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Submitted 11 March, 2019;
originally announced March 2019.
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Electrical and Optical Properties of Heavily Ge-Doped AlGaN
Authors:
R. Blasco,
A. Ajay,
E. Robin,
C. Bougerol,
K. Lorentz,
L. C. Alves,
I. Mouton,
L. Amichi,
A. Grenier,
E. Monroy
Abstract:
We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford backscattering spectrometry, and the Ge concentration was increased up to [Ge] = 1E21 cm-3. Even at these high do** levels Ge does not induce any structural degra…
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We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford backscattering spectrometry, and the Ge concentration was increased up to [Ge] = 1E21 cm-3. Even at these high do** levels Ge does not induce any structural degradation in AlxGa1-xN layers with x below 0.15. However, for higher Al compositions, clustering of Ge forming crystallites were observed. Hall effect measurements show a gradual decrease of the carrier concentration when increasing the Al mole fraction, which is already noticeable in samples with x = 0.24. Samples with x = 0.64-0.66 remain conductive, but the donor activation rate drops to around 0.1% (carrier concentration around 1E18 cm-3 for [Ge] = 1E21 cm-3). From the optical point of view, the low temperature photoluminescence is dominated by the band-to-band emission, which show only spectral shift and broadening associated to the Burstein-Moss effect. The evolution of the photoluminescence peak position with temperature shows that the free carriers due to Ge do** can efficiently screen the potential fluctuations induced by alloy disorder.
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Submitted 13 December, 2018; v1 submitted 25 October, 2018;
originally announced October 2018.
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Improvement of the critical temperature of NbTiN films on III-nitride substrates
Authors:
Houssaine Machhadani,
Julien Zichi,
Catherine Bougerol,
Stéphane Lequien,
Jean-Luc Thomassin,
Nicolas Mollard,
Anna Mukhtarova,
Val Zwiller,
Jean-Michel Gérard,
Eva Monroy
Abstract:
In this paper, we study the impact of using III-nitride semiconductors (GaN, AlN) as substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive magnetron sputtering. The resulting NbTiN layers are (111)-oriented, fully relaxed, and they keep an epitaxial relation with the substrate. The higher critical superconducting temperature (Tc = 11.8 K) was obtained on AlN-on-sapp…
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In this paper, we study the impact of using III-nitride semiconductors (GaN, AlN) as substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive magnetron sputtering. The resulting NbTiN layers are (111)-oriented, fully relaxed, and they keep an epitaxial relation with the substrate. The higher critical superconducting temperature (Tc = 11.8 K) was obtained on AlN-on-sapphire, which was the substrate with smaller lattice mismatch with NbTiN. We attribute this improvement to a reduction of the NbTiN roughness, which appears associated to the relaxation of the lattice misfit with the substrate. On AlN-on-sapphire, superconducting nanowire single photon detectors (SNSPDs) were fabricated and tested, obtaining external quantum efficiencies that are in excellent agreement with theoretical calculations.
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Submitted 5 December, 2018; v1 submitted 9 October, 2018;
originally announced October 2018.
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Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micropillars
Authors:
Jonas Lähnemann,
David A. Browne,
Akhil Ajay,
Mathieu Jeannin,
Angela Vasanelli,
Jean-Luc Thomassin,
Edith Bellet-Amalric,
Eva Monroy
Abstract:
We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well superlattices that display either near- or mid-infrared intersubband absorption were etched into nano- and micropillar arrays in an inductively coupled plasma. We investigate the influence of this process on the structure and strain-state, on th…
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We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well superlattices that display either near- or mid-infrared intersubband absorption were etched into nano- and micropillar arrays in an inductively coupled plasma. We investigate the influence of this process on the structure and strain-state, on the interband emission and on the intersubband absorption. Notably, for pillar spacings significantly smaller ($\leq1/3$) than the intersubband wavelength, the magnitude of the intersubband absorption is not reduced even when 90\% of the material is etched away and a similar linewidth is obtained. The same holds for the interband emission. In contrast, for pillar spacings on the order of the intersubband absorption wavelength, the intersubband absorption is masked by refraction effects and photonic crystal modes. The presented results are a first step towards micro- and nanostructured group-III nitride devices relying on intersubband transitions.
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Submitted 23 October, 2018; v1 submitted 23 May, 2018;
originally announced May 2018.
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Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors
Authors:
Maria Spies,
Martien I. Den Hertog,
Pascal Hille,
Jörg Schörmann,
Jakub Polaczyński,
Bruno Gayral,
Martin Eickhoff,
Eva Monroy,
Jonas Lähnemann
Abstract:
We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and do** profile were designed in such a way that the application of positive or negative bias leads to an enhancement of the collection of photogenerated carriers from the GaN/AlN superlattice or from the GaN base, respectively, as confirmed by electron beam…
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We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and do** profile were designed in such a way that the application of positive or negative bias leads to an enhancement of the collection of photogenerated carriers from the GaN/AlN superlattice or from the GaN base, respectively, as confirmed by electron beam-induced current measurements. The devices display enhanced response in the ultraviolet A ($\approx$ 330-360 nm) / B ($\approx$ 280-330 nm) spectral windows under positive/negative bias. The result is explained by correlation of the photocurrent measurements with scanning transmission electron microscopy observations of the same single nanowire, and semi-classical simulations of the strain and band structure in one and three dimensions.
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Submitted 27 October, 2017;
originally announced December 2017.
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Near-infrared intersubband photodetection in GaN/AlN nanowires
Authors:
Jonas Lähnemann,
Akhil Ajay,
Martien I. den Hertog,
Eva Monroy
Abstract:
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $μ$m wavelength window with picosecond response times. Incorporating nanowires as active media could enable an independent control over the electrical cross-section of the device and the optical absorption cross-s…
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Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $μ$m wavelength window with picosecond response times. Incorporating nanowires as active media could enable an independent control over the electrical cross-section of the device and the optical absorption cross-section. Furthermore, the three-dimensional carrier confinement in nanowire heterostructures opens new possibilities to tune the carrier relaxation time. However, the generation of structural defects and the surface sensitivity of GaAs nanowires have so far hindered the fabrication of nanowire intersubband devices. Here, we report the first demonstration of intersubband photodetection in a nanowire, using GaN nanowires containing a GaN/AlN superlattice absorbing at 1.55 $μ$m. The combination of spectral photocurrent measurements with 8-band k$\cdot$p calculations of the electronic structure supports the interpretation of the result as intersubband photodetection in these extremely short-period superlattices. We observe a linear dependence of the photocurrent with the incident illumination power, which confirms the insensitivity of the intersubband process to surface states and highlights how architectures featuring large surface-to-volume ratios are suitable as intersubband photodetectors. Our analysis of the photocurrent characteristics points out routes for an improvement of the device performance. This first nanowire based intersubband photodetector represents a technological breakthrough that paves the way to a powerful device platform with potential for ultrafast, ultrasensitive photodetectors and highly-efficient quantum cascade emitters with improved thermal stability.
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Submitted 17 January, 2019; v1 submitted 2 October, 2017;
originally announced October 2017.
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Exact method of determination of the recombination mode from time resolved photoluminescence data
Authors:
Pawel Strak,
Kamil Koronski,
Kamil Sobczak,
Jolanta Borysiuk,
Krzysztof P. Korona,
Konrad Sakowski,
Andrzej Suchocki,
Eva Monroy,
Stanislaw Krukowski,
Agata Kaminska
Abstract:
A method of data analysis is proposed for the determination of the carrier recombination processes in optically excited matter measured by time-resolved photoluminescence, differentiating monomolecular, bi-molecular, tri-molecular, and higher order molecular processes. Our method allows to determine whether the so-called ABC model describes time evolution of optical relaxation of the excited syste…
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A method of data analysis is proposed for the determination of the carrier recombination processes in optically excited matter measured by time-resolved photoluminescence, differentiating monomolecular, bi-molecular, tri-molecular, and higher order molecular processes. Our method allows to determine whether the so-called ABC model describes time evolution of optical relaxation of the excited system. The procedure is applicable to the time evolution of any optically excited medium. As an illustration, the method is successfully applied to III-nitride polar and non-polar multi-quantum wells. We show that in this case the mono- and bi-molecular processes determine the carrier relaxation, and the tri-molecular Auger recombination contribution is negligible.
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Submitted 7 March, 2019; v1 submitted 15 September, 2017;
originally announced September 2017.
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Effect of do** on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures
Authors:
A. Ajay,
C. B. Lim,
D. A. Browne,
J. Polaczynski,
E. Bellet-Amalric,
J. Bleuse,
M. I. den Hertog,
E. Monroy
Abstract:
In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 microns. We compare the effect of do** the GaN sections with Si and Ge, and we discuss the variation of free-carrier screening with the do** density and well/nanodisk size. We obser…
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In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 microns. We compare the effect of do** the GaN sections with Si and Ge, and we discuss the variation of free-carrier screening with the do** density and well/nanodisk size. We observe that nanowire heterostructures consistently present longer photoluminescence decay times than their planar counterparts, which supports the existence of an in-plane piezoelectric field associated to the shear component of the strain tensor, leading to lateral electron-hole separation. We report intersubband absorption covering 1.45 microns to 1.75 microns using Ge-doped quantum wells, with comparable performance to well-studied Si-doped planar heterostructures. We also report comparable intersubband absorption in Si- and Ge-doped nanowire heterostructures indicating that the choice of dopant is not an intrinsic barrier for observing intersubband phenomena. In addition, we calculate the spectral shift of the intersubband absorption due to many body effects as a function of the do** concentration.
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Submitted 8 August, 2017; v1 submitted 11 May, 2017;
originally announced May 2017.
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P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
Authors:
S. Valdueza-Felip,
A. Ajay,
L. Redaelli,
M. P. Chauvat,
P. Ruterana,
T. Cremel,
M. Jiménez-Rodríguez,
K. Kheng,
E. Monroy
Abstract:
We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x = 0.10-0.40) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire substrates. Junctions terminated with p-InGaN present improved carrier extraction efficiency in comparison with devices capped with p-GaN, due to the deleterious effect of polarizatio…
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We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x = 0.10-0.40) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire substrates. Junctions terminated with p-InGaN present improved carrier extraction efficiency in comparison with devices capped with p-GaN, due to the deleterious effect of polarization discontinuities on the device performance. We demonstrate that the presence of Mg does not perturb the In incorporation in InGaN, and it leads to a significant reduction of the stacking fault density. p-In0.3Ga0.7N layers with a hole concentration of 3.2x1018 cm-3 are demonstrated. InGaN homojunction devices show a peak EQE = 14+-2% in the blue-to-orange spectral region, and an extended cutoff to 600 nm.
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Submitted 24 October, 2016;
originally announced October 2016.
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Design of polarization-insensitive superconducting single photon detectors with high-index dielectrics
Authors:
Luca Redaelli,
Val Zwiller,
E. Monroy,
J. M. Gérard
Abstract:
In this paper, the design of superconducting-nanowire single-photon detectors which are insensitive to the polarization of the incident light is investigated. By using high-refractive-index dielectrics, the index mismatch between the nanowire and the surrounding media is reduced. This enhances the absorption of light with electric field vector perpendicular to the nanowire segments, which is gener…
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In this paper, the design of superconducting-nanowire single-photon detectors which are insensitive to the polarization of the incident light is investigated. By using high-refractive-index dielectrics, the index mismatch between the nanowire and the surrounding media is reduced. This enhances the absorption of light with electric field vector perpendicular to the nanowire segments, which is generally hindered in this kind of detectors. Building on this principle and focusing on NbTiN nanowire devices, we present several easy-to-realize cavity architectures which allow high absorption efficiency (in excess of 90%) and polarization insensitivity simultaneously. Designs based on ultranarrow nanowires, for which the polarization sensitivity is much more marked, are also presented. Finally, we briefly discuss the specific advantages of this approach in the case of WSi or MoSi nanowires.
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Submitted 5 July, 2016;
originally announced July 2016.
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UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
Authors:
Jonas Lähnemann,
Martien Den Hertog,
Pascal Hille,
María de la Mata,
Thierry Fournier,
Jörg Schörmann,
Jordi Arbiol,
Martin Eickhoff,
Eva Monroy
Abstract:
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a surface conduction channel, the incorporation of the heterostructure leads to a decrease of the dark cu…
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We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a surface conduction channel, the incorporation of the heterostructure leads to a decrease of the dark current and an increase of the photosensitivity. A significant dispersion in the magnitude of dark currents for different single nanowires is attributed to the coalescence of nanowires with displaced nanodisks, reducing the effective length of the heterostructure. A larger number of active nanodisks and AlN barriers in the current path results in lower dark current and higher photosensitivity, and improves the sensitivity of the nanowire to variations in the illumination intensity (improved linearity). Additionally, we observe a persistence of the photocurrent, which is attributed to a change of the resistance of the overall structure, particularly the GaN stem and cap sections. In consequence, the time response is rather independent of the dark current.
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Submitted 20 June, 2017; v1 submitted 27 April, 2016;
originally announced April 2016.
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Ge do** of GaN beyond the Mott transition
Authors:
A. Ajay,
J. Schörmann,
M. Jimenez-Rodriguez,
C. B. Lim,
F. Walther,
M. Rohnke,
I. Mouton,
L. Amichi,
C. Bougerol,
M. I. Den Hertog,
M. Eickhoff,
E. Monroy
Abstract:
We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K, well beyond the Mott density. The Ge concentration and free carrier density were found to scale linearly with the Ge flux in the studied range. All the GaN:Ge layers present smooth surface morphology with atomic terrac…
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We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K, well beyond the Mott density. The Ge concentration and free carrier density were found to scale linearly with the Ge flux in the studied range. All the GaN:Ge layers present smooth surface morphology with atomic terraces, without trace of pits or cracks, and the mosaicity of the samples has no noticeable dependence on the Ge concentration. The variation of the GaN:Ge band gap with the carrier concentration is consistent with theoretical calculations of the band gap renormalization due to electron-electron and electron-ion interaction, and Burstein-Moss effect.
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Submitted 8 July, 2016; v1 submitted 1 April, 2016;
originally announced April 2016.
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Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
Authors:
L. Redaelli,
A. Mukhtarova,
S. Valdueza-Felip,
A. Ajay,
C. Bougerol,
C. Himwas,
J. Faure-Vincent,
C. Durand,
J. Eymery,
E. Monroy
Abstract:
We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronou…
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We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronounced in absorption: in thicker wells, transitions to higher energy levels dominate. Besides, partial strain relaxation in thicker wells leads to the formation of defects, hence degrading the overall solar cell performance.
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Submitted 23 February, 2016;
originally announced February 2016.
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Design of broadband high-efficiency superconducting-nanowire single photon detectors
Authors:
Luca Redaelli,
Gabriele Bulgarini,
Sergiy Dobrovolskiy,
Sander N. Dorenbos,
Val Zwiller,
Eva Monroy,
Jean-Michel Gérard
Abstract:
In this paper several designs to maximize the absorption efficiency of superconducting-nanowire single-photon detectors are investigated. Using a simple optical cavity consisting of a gold mirror and a SiO2 layer, the absorption efficiency can be boosted to over 97%: this result is confirmed experimentally by the realization of an NbTiN-based detector having an overall system detection efficiency…
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In this paper several designs to maximize the absorption efficiency of superconducting-nanowire single-photon detectors are investigated. Using a simple optical cavity consisting of a gold mirror and a SiO2 layer, the absorption efficiency can be boosted to over 97%: this result is confirmed experimentally by the realization of an NbTiN-based detector having an overall system detection efficiency of 85% at 1.31 micrometers. Calculations show that by sandwiching the nanowire between two dielectric Bragg reflectors, unity absorption (> 99.9%) could be reached at the peak wavelength for optimized structures. To achieve broadband high efficiency, a different approach is considered: a waveguide-coupled detector. The calculations performed in this work show that, by correctly dimensioning the waveguide and the nanowire, polarization-insensitive detectors absorbing more than 95% of the injected photons over a wavelength range of several hundred nm can be designed. We propose a detector design making use of GaN/AlN waveguides, since these materials allow lattice-matched epitaxial deposition of Nb(Ti)N films and are transparent on a very wide wavelength range.
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Submitted 22 February, 2016;
originally announced February 2016.
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Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band
Authors:
C. B. Lim,
A. Ajay,
C. Bougerol,
B. Haas,
J. Schörmann,
M. Beeler,
J. Lähnemann,
M. Eickhoff,
E. Monroy
Abstract:
This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN substrates. The quantum wells were designed to contain two confined electronic levels, decoupled from the neighboring wells. Structural analysis reveals flat and regular quantum wells in the two perpendicular inplane direct…
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This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN substrates. The quantum wells were designed to contain two confined electronic levels, decoupled from the neighboring wells. Structural analysis reveals flat and regular quantum wells in the two perpendicular inplane directions, with high-resolution images showing inhomogeneities of the Al composition in the barriers along the growth axis. We do not observe extended structural defects introduced by the epitaxial process. Low-temperature intersubband absorption from 1.5 to 9 THz is demonstrated, covering part of the 7 to 10 THz band forbidden to GaAs-based technologies.
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Submitted 16 October, 2015; v1 submitted 1 June, 2015;
originally announced June 2015.
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Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short and mid-wavelength infrared regions
Authors:
C. B. Lim,
M. Beeler,
A. Ajay,
J. Lähnemann,
E. Bellet-Amalric,
C. Bougerol,
E. Monroy
Abstract:
This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells grown on bulk GaN for intersubband optoelectronics in the short- and mid-wavelength infrared ranges. The characterization results are compared to those for reference samples grown on the polar c-plane, and are verified by self-consistent Schrödinger-Poisson calculations. The best results in terms of mosaicity, surface roug…
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This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells grown on bulk GaN for intersubband optoelectronics in the short- and mid-wavelength infrared ranges. The characterization results are compared to those for reference samples grown on the polar c-plane, and are verified by self-consistent Schrödinger-Poisson calculations. The best results in terms of mosaicity, surface roughness, photoluminescence linewidth and intensity, as well as intersubband absorption are obtained from m-plane structures, which display room-temperature intersubband absorption in the range from 1.5 to 2.9 um. Based on these results, a series of m-plane GaN/AlGaN multi-quantum-wells were designed to determine the accessible spectral range in the mid-infrared. These samples exhibit tunable room-temperature intersubband absorption from 4.0 to 5.8 um, the long-wavelength limit being set by the absorption associated with the second order of the Reststrahlen band in the GaN substrates.
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Submitted 20 April, 2015;
originally announced April 2015.
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Long-lived excitons in GaN/AlN nanowire heterostructures
Authors:
M. Beeler,
C. B. Lim,
P. Hille,
J. Bleuse,
J. Schörmann,
M. de la Mata,
J. Arbiol,
M. Eickhoff,
E. Monroy
Abstract:
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Do** the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. These phenomena are explained by the three-dimensional electric field distribution within the GaN nanodisks, which has an axial component in the range…
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GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Do** the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. These phenomena are explained by the three-dimensional electric field distribution within the GaN nanodisks, which has an axial component in the range of a few MV/cm associated to the spontaneous and piezoelectric polarization, and a radial piezoelectric contribution associated to the shear components of the lattice strain. At low dopant concentrations, a large electron-hole separation in both the axial and radial directions is present. The relatively weak radial electric fields, which are about one order of magnitude smaller than the axial fields, are rapidly screened by do**. This bidirectional screening leads to a radial and axial centralization of the hole underneath the electron, and consequently, to large decreases in PL decay times, in addition to luminescence blue shifts.
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Submitted 20 April, 2015; v1 submitted 24 December, 2014;
originally announced December 2014.
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High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics
Authors:
S. Valdueza-Felip,
E. Bellet-Amalric,
A. Núñez-Cascajero,
Y. Wang,
M. -P. Chauvat,
P. Ruterana,
S. Pouget,
K. Lorenz,
E. Alves,
E. Monroy
Abstract:
We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For In mole fractions x = 0.13-0.48, best structural and morphological quality is obtained under In excess conditions, at In accumulation limit, and at a growth temperature where InGaN decomposition is active. Under such cond…
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We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For In mole fractions x = 0.13-0.48, best structural and morphological quality is obtained under In excess conditions, at In accumulation limit, and at a growth temperature where InGaN decomposition is active. Under such conditions, in situ and ex situ analysis of the evolution of the crystalline structure with the growth thickness points to an onset of misfit relaxation after the growth of 40 nm, and a gradual relaxation during more than 200 nm which results in an inhomogeneous strain distribution along the growth axis. This process is associated with a compositional pulling effect, i.e. indium incorporation is partially inhibited in presence of compressive strain, resulting in a compositional gradient with increasing In mole fraction towards the surface.
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Submitted 6 January, 2015; v1 submitted 21 October, 2014;
originally announced October 2014.
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Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission
Authors:
C. Himwas,
M. den Hertog,
Le Si Dang,
E. Monroy,
R. Songmuang
Abstract:
The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with Al content, leading to enhanced carrier localiz…
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The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with Al content, leading to enhanced carrier localization signatures in their optical characteristics i.e. red shift of the emission, s-shaped temperature dependence and linewidth broadening. Despite these alloy fluctuations, the emission energy of AlGaN/AlN NDs can be tuned in the 240-350 nm range with internal quantum efficiencies around 30%.
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Submitted 12 September, 2014;
originally announced September 2014.
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Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography
Authors:
Martien Den Hertog,
Rudeesun Songmuang,
Eva Monroy
Abstract:
In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of nanowire samples for electron holography and combine potential profiles obtained using holography with theoretical calculations of the projected potential in order to gain understanding of the potential distribution in the…
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In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of nanowire samples for electron holography and combine potential profiles obtained using holography with theoretical calculations of the projected potential in order to gain understanding of the potential distribution in these nanostructures. The effects of surface states are discussed
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Submitted 10 April, 2014;
originally announced April 2014.
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Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors
Authors:
F. González-Posada,
R. Songmuang,
M. Den Hertog,
E. Monroy
Abstract:
In this work, we compare the photodetector performance of single defect-free undoped and n-in GaN nanowires (NWs). In vacuum, undoped NWs present a responsivity increment, nonlinearities and persistent photoconductivity effects (~ 100 s). Their unpinned Fermi level at the m-plane NW sidewalls enhances the surface states role in the photodetection dynamics. Air adsorbed oxygen accelerates the carri…
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In this work, we compare the photodetector performance of single defect-free undoped and n-in GaN nanowires (NWs). In vacuum, undoped NWs present a responsivity increment, nonlinearities and persistent photoconductivity effects (~ 100 s). Their unpinned Fermi level at the m-plane NW sidewalls enhances the surface states role in the photodetection dynamics. Air adsorbed oxygen accelerates the carrier dynamics at the price of reducing the photoresponse. In contrast, in n-i-n NWs, the Fermi level pinning at the contact regions limits the photoinduced sweep of the surface band bending, and hence reduces the environment sensitivity and prevents persistent effects even in vacuum.
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Submitted 7 December, 2012;
originally announced December 2012.
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Quantum transport in GaN/AlN double-barrier heterostructure nanowires
Authors:
R. Songmuang,
G. Katsaros,
E. Monroy,
P. Spathis,
C. Bourgeral,
M. Mongillo,
S. De Franceschi
Abstract:
We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type do** modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped mi…
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We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type do** modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped middle region, forming single or multiple islands with a characteristic length of ~100 nm. The incorporation of two AlN tunnel barriers causes confinement to occur within the GaN well in between. In the case of 6-nm-thick wells and 2-nm-thick barriers, we observe characteristic signatures of Coulomb-blockaded transport in single quantum dots with discrete energy states. For narrower wells and barriers, Coulomb-blockade effects do not play a significant role while the onset of resonant tunneling via the confined quantum levels is accompanied by a negative differential resistance surviving up to ~150 K.
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Submitted 20 May, 2010;
originally announced May 2010.