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50 GeV $π^-$ in, nothing out: a sensitive probe of invisible $η$ and $η'$ decays with NA64h
Authors:
Yu. M. Andreev,
A. Antonov,
M. A. Ayala Torres,
D. Banerjee,
B. Banto Oberhauser,
J. Bernhard,
P. Bisio,
A. Celentano,
N. Charitonidis,
D. Cooke,
P. Crivelli,
E. Depero,
A. V. Dermenev,
S. V. Donskov,
R. R. Dusaev,
T. Enik,
V. N. Frolov,
S. V. Gertsenberger,
S. Girod,
S. N. Gninenko,
M. Hosgen,
V. A. Kachanov,
Y. Kambar,
A. E. Karneyeu,
G. D. Kekelidze
, et al. (32 additional authors not shown)
Abstract:
We present the first results from a proof-of-concept search for dark sectors via invisible decays of pseudoscalar $η$ and $η'$ mesons in the NA64h experiment at the CERN SPS. Our novel technique uses the charge-exchange reaction of 50 GeV $π^-$ on nuclei of an active target as the source of neutral mesons. The $η, η' \to invisible$ events would exhibit themselves via a striking signature - the com…
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We present the first results from a proof-of-concept search for dark sectors via invisible decays of pseudoscalar $η$ and $η'$ mesons in the NA64h experiment at the CERN SPS. Our novel technique uses the charge-exchange reaction of 50 GeV $π^-$ on nuclei of an active target as the source of neutral mesons. The $η, η' \to invisible$ events would exhibit themselves via a striking signature - the complete disappearance of the incoming beam energy in the detector. No evidence for such events has been found with $2.9\times10^{9}$ pions on target accumulated during one day of data taking. This allows us to set a stringent limit on the branching ratio ${\rm Br}(η' \to invisible) < 2.1 \times 10^{-4}$ improving the current bound by a factor of $\simeq3$. We also set a limit on ${\rm Br}(η\to invisible) < 1.1 \times 10^{-4}$ comparable with the existing one. These results demonstrate the great potential of our approach and provide clear guidance on how to enhance and extend the sensitivity for dark sector physics from future searches for invisible neutral meson decays.
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Submitted 4 June, 2024;
originally announced June 2024.
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Probing Hidden Leptonic Scalar Portals using the NA64 Experiment at CERN
Authors:
A. Ponten,
H. Sieber,
B. Banto Oberhauser,
P. Crivelli,
D. Kirpichnikov,
S. N. Gninenko,
M. Hösgen,
L. Molina Bueno,
M. Mongillo,
A. Zhevlakov
Abstract:
In this study, we demonstrate the potential of the NA64 experiment at CERN SPS to search for New Physics processes involving $e\rightarrowμ$ transitions after the collision of 100 GeV electrons with target nuclei. A new Dark Sector leptonic portal in which a scalar boson $\varphi$ could be produced in the lepton-flavor-changing bremsstrahlung-like reaction, $eN\rightarrow μN\varphi$, is used as be…
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In this study, we demonstrate the potential of the NA64 experiment at CERN SPS to search for New Physics processes involving $e\rightarrowμ$ transitions after the collision of 100 GeV electrons with target nuclei. A new Dark Sector leptonic portal in which a scalar boson $\varphi$ could be produced in the lepton-flavor-changing bremsstrahlung-like reaction, $eN\rightarrow μN\varphi$, is used as benchmark process. In this work, we develop a realistic Monte Carlo simulation of the NA64 experimental setup implementing the differential and total production cross-section computed at exact tree-level and applying the Weiszäcker-Williams phase space approximation. Using this framework, we investigate the main background sources and calculate the expected sensitivity of the experiment. The results indicate that with minor setup optimization, NA64 can probe a large fraction of the available parameter space compatible with the muon $g-2$ anomaly and the Dark Matter relic predictions in the context of a new Dark Sector leptonic portal with $10^{11}$ EOT. This result paves the way to the exploration of lepton-flavour-changing transitions in NA64.
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Submitted 24 April, 2024;
originally announced April 2024.
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First constraints on the $L_μ-L_τ$ explanation of the muon $g-2$ anomaly from NA64-$e$ at CERN
Authors:
Yu. M. Andreev,
A. Antonov,
D. Banerjee,
B. Banto Oberhauser,
J. Bernhard,
P. Bisio,
A. Celentano,
N. Charitonidis,
D. Cooke,
P. Crivelli,
E. Depero,
A. V. Dermenev,
S. V. Donskov,
R. R. Dusaev,
T. Enik,
V. N. Frolov,
A. Gardikiotis,
S. N. Gninenko,
M. Hösgen,
V. A. Kachanov,
Y. Kambar,
A. E. Karneyeu,
G. Kekelidze,
B. Ketzer,
D. V. Kirpichnikov
, et al. (36 additional authors not shown)
Abstract:
The inclusion of an additional $U(1)$ gauge $L_μ-L_τ$ symmetry would release the tension between the measured and the predicted value of the anomalous muon magnetic moment: this paradigm assumes the existence of a new, light $Z^\prime$ vector boson, with dominant coupling to $μ$ and $τ$ leptons and interacting with electrons via a loop mechanism. The $L_μ-L_τ$ model can also explain the Dark Matte…
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The inclusion of an additional $U(1)$ gauge $L_μ-L_τ$ symmetry would release the tension between the measured and the predicted value of the anomalous muon magnetic moment: this paradigm assumes the existence of a new, light $Z^\prime$ vector boson, with dominant coupling to $μ$ and $τ$ leptons and interacting with electrons via a loop mechanism. The $L_μ-L_τ$ model can also explain the Dark Matter relic abundance, by assuming that the $Z'$ boson acts as a "portal" to a new Dark Sector of particles in Nature, not charged under known interactions. In this work we present the results of the $Z'$ search performed by the NA64-$e$ experiment at CERN SPS, that collected $\sim 9\times10^{11}$ 100 GeV electrons im**ing on an active thick target. Despite the suppressed $Z'$ production yield with an electron beam, NA64-$e$ provides the first accelerator-based results excluding the $g-2$ preferred band of the $Z'$ parameter space in the 1 keV $ < m_{Z'} \lesssim 2$ MeV range, in complementarity with the limits recently obtained by the NA64-$μ$ experiment with a muon beam.
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Submitted 4 July, 2024; v1 submitted 10 April, 2024;
originally announced April 2024.
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High-coherence superconducting qubits made using industry-standard, advanced semiconductor manufacturing
Authors:
Jacques Van Damme,
Shana Massar,
Rohith Acharya,
Tsvetan Ivanov,
Daniel Perez Lozano,
Yann Canvel,
Mael Demarets,
Diziana Vangoidsenhoven,
Yannick Hermans,
Ju-Geng Lai,
Vadiraj Rao,
Massimo Mongillo,
Danny Wan,
Jo De Boeck,
Anton Potocnik,
Kristiaan De Greve
Abstract:
The development of superconducting qubit technology has shown great potential for the construction of practical quantum computers. As the complexity of quantum processors continues to grow, the need for stringent fabrication tolerances becomes increasingly critical. Utilizing advanced industrial fabrication processes could facilitate the necessary level of fabrication control to support the contin…
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The development of superconducting qubit technology has shown great potential for the construction of practical quantum computers. As the complexity of quantum processors continues to grow, the need for stringent fabrication tolerances becomes increasingly critical. Utilizing advanced industrial fabrication processes could facilitate the necessary level of fabrication control to support the continued scaling of quantum processors. However, these industrial processes are currently not optimized to produce high coherence devices, nor are they a priori compatible with the commonly used approaches to make superconducting qubits. In this work, we demonstrate for the first time superconducting transmon qubits manufactured in a 300 mm CMOS pilot line, using industrial fabrication methods, with resulting relaxation and coherence times already exceeding 100 microseconds. We show across-wafer, large-scale statistics studies of coherence, yield, variability, and aging that confirm the validity of our approach. The presented industry-scale fabrication process, using exclusively optical lithography and reactive ion etching, shows performance and yield similar to the conventional laboratory-style techniques utilizing metal lift-off, angled evaporation, and electron-beam writing. Moreover, it offers potential for further upscaling by including three-dimensional integration and additional process optimization using advanced metrology and judicious choice of processing parameters and splits. This result marks the advent of more reliable, large-scale, truly CMOS-compatible fabrication of superconducting quantum computing processors.
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Submitted 22 April, 2024; v1 submitted 2 March, 2024;
originally announced March 2024.
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Development of the fully Geant4 compatible package for the simulation of Dark Matter in fixed target experiments
Authors:
B. Banto Oberhauser,
P. Bisio,
A. Celentano,
E. Depero,
R. R. Dusaev,
D. V. Kirpichnikov,
M. M. Kirsanov,
N. V. Krasnikov,
A. Marini,
L. Marsicano,
L. Molina-Bueno,
M. Mongillo,
D. Shchukin,
H. Sieber,
I. V. Voronchikhin
Abstract:
The search for new comparably light (well below the electroweak scale) feebly interacting particles is an exciting possibility to explain some mysterious phenomena in physics, among them the origin of Dark Matter. The sensitivity study through detailed simulation of projected experiments is a key point in estimating their potential for discovery.
Several years ago we created the DMG4 package for…
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The search for new comparably light (well below the electroweak scale) feebly interacting particles is an exciting possibility to explain some mysterious phenomena in physics, among them the origin of Dark Matter. The sensitivity study through detailed simulation of projected experiments is a key point in estimating their potential for discovery.
Several years ago we created the DMG4 package for the simulation of DM (Dark Matter) particles in fixed target experiments. The natural approach is to integrate this simulation into the same program that performs the full simulation of particles in the experiment setup. The Geant4 toolkit framework was chosen as the most popular and versatile solution nowadays.
The simulation of DM particles production by this package accommodates several possible scenarios, employing electron, muon or photon beams and involving various mediators, such as vector, axial vector, scalar, pseudoscalar, or spin 2 particles. The bremsstrahlung, annihilation or Primakoff processes can be simulated.
The package DMG4 contains a subpackage DarkMatter with cross section methods weakly connected to Geant4. It can be used in different frameworks.
In this paper, we present the latest developments of the package, such as extending the list of possible mediator particle types, refining formulas for the simulation and extending the mediator mass range. The user interface is also made more flexible and convenient.
In this work, we also demonstrate the usage of the package, the improvements in the simulation accuracy and some cross check validations.
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Submitted 23 January, 2024;
originally announced January 2024.
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Exploration of the Muon $g-2$ and Light Dark Matter explanations in NA64 with the CERN SPS high energy muon beam
Authors:
Yu. M. Andreev,
D. Banerjee,
B. Banto Oberhauser,
J. Bernhard,
P. Bisio,
N. Charitonidis,
P. Crivelli,
E. Depero,
A. V. Dermenev,
S. V. Donskov,
R. R. Dusaev,
T. Enik,
V. N. Frolov,
R. B. Galleguillos Silva,
A. Gardikiotis,
S. V. Gertsenberger,
S. Girod,
S. N. Gninenko,
M. Hoesgen,
V. A. Kachanov,
Y. Kambar,
A. E. Karneyeu,
E. A. Kasianova,
G. Kekelidze,
B. Ketzer
, et al. (32 additional authors not shown)
Abstract:
We report on a search for a new $Z'$ ($L_μ-L_τ$) vector boson performed at the NA64 experiment employing a high energy muon beam and a missing energy-momentum technique. Muons from the M2 beamline at the CERN Super Proton Synchrotron with a momentum of 160 GeV/c are directed to an active target. A signal event is a single scattered muon with momentum $<$ 80 GeV/c in the final state, accompanied by…
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We report on a search for a new $Z'$ ($L_μ-L_τ$) vector boson performed at the NA64 experiment employing a high energy muon beam and a missing energy-momentum technique. Muons from the M2 beamline at the CERN Super Proton Synchrotron with a momentum of 160 GeV/c are directed to an active target. A signal event is a single scattered muon with momentum $<$ 80 GeV/c in the final state, accompanied by missing energy, i.e. no detectable activity in the downstream calorimeters. For a total statistic of $(1.98\pm0.02)\times10^{10}$ muons on target, no event is observed in the expected signal region. This allows us to set new limits on part of the remaining $(m_{Z'},\ g_{Z'})$ parameter space which could provide an explanation for the muon $(g-2)_μ$ anomaly. Additionally, our study excludes part of the parameter space suggested by the thermal Dark Matter relic abundance. Our results pave the way to explore Dark Sectors and light Dark Matter with muon beams in a unique and complementary way to other experiments.
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Submitted 3 January, 2024;
originally announced January 2024.
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Probing Light Dark Matter with positron beams at NA64
Authors:
Yu. M. Andreev,
A. Antonov,
D. Banerjee,
B. Banto Oberhauser,
J. Bernhard,
P. Bisio,
M. Bondi,
A. Celentano,
N. Charitonidis,
D. Cooke,
P. Crivelli,
E. Depero,
A. V. Dermenev,
S. V. Donskov,
R. R. Dusaev,
T. Enik,
V. N. Frolov,
A. Gardikiotis,
S. G. Gerassimov,
S. N. Gninenko,
M. Hosgen,
M. Jeckel,
V. A. Kachanov,
Y. Kambar,
A. E. Karneyeu
, et al. (41 additional authors not shown)
Abstract:
We present the results of a missing-energy search for Light Dark Matter which has a new interaction with ordinary matter transmitted by a vector boson, called dark photon $A^\prime$. For the first time, this search is performed with a positron beam by using the significantly enhanced production of $A^\prime$ in the resonant annihilation of positrons with atomic electrons of the target nuclei, foll…
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We present the results of a missing-energy search for Light Dark Matter which has a new interaction with ordinary matter transmitted by a vector boson, called dark photon $A^\prime$. For the first time, this search is performed with a positron beam by using the significantly enhanced production of $A^\prime$ in the resonant annihilation of positrons with atomic electrons of the target nuclei, followed by the invisible decay of $A^\prime$ into dark matter. No events were found in the signal region with $(10.1 \pm 0.1)~\times~10^{9}$ positrons on target with 100 GeV energy. This allowed us to set new exclusion limits that, relative to the collected statistics, prove the power of this experimental technique. This measurement is a crucial first step toward a future exploration program with positron beams, whose estimated sensitivity is here presented.
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Submitted 29 August, 2023;
originally announced August 2023.
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Search for Light Dark Matter with NA64 at CERN
Authors:
Yu. M. Andreev,
D. Banerjee,
B. Banto Oberhauser,
J. Bernhard,
P. Bisio,
A. Celentano,
N. Charitonidis,
A. G. Chumakov,
D. Cooke,
P. Crivelli,
E. Depero,
A. V. Dermenev,
S. V. Donskov,
R. R. Dusaev,
T. Enik,
V. N. Frolov,
R. B. Galleguillos Silva,
A. Gardikiotis,
S. V. Gertsenberger,
S. Girod,
S. N. Gninenko,
M. H"osgen,
V. A. Kachanov,
Y. Kambar,
A. E. Karneyeu
, et al. (38 additional authors not shown)
Abstract:
Thermal dark matter models with particle $χ$ masses below the electroweak scale can provide an explanation for the observed relic dark matter density. This would imply the existence of a new feeble interaction between the dark and ordinary matter. We report on a new search for the sub-GeV $χ$ production through the interaction mediated by a new vector boson, called the dark photon $A'$, in collisi…
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Thermal dark matter models with particle $χ$ masses below the electroweak scale can provide an explanation for the observed relic dark matter density. This would imply the existence of a new feeble interaction between the dark and ordinary matter. We report on a new search for the sub-GeV $χ$ production through the interaction mediated by a new vector boson, called the dark photon $A'$, in collisions of 100 GeV electrons with the active target of the NA64 experiment at the CERN SPS. With $9.37\times10^{11}$ electrons on target collected during 2016-2022 runs NA64 probes for the first time the well-motivated region of parameter space of benchmark thermal scalar and fermionic dark matter models. No evidence for dark matter production has been found. This allows us to set the most sensitive limits on the $A'$ couplings to photons for masses $m_{A'} \lesssim 0.35$ GeV, and to exclude scalar and Majorana dark matter with the $χ-A'$ coupling $α_D \leq 0.1$ for masses $0.001 \lesssim m_χ\lesssim 0.1$ GeV and $3m_χ\leq m_{A'}$.
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Submitted 5 July, 2023;
originally announced July 2023.
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Measurement of the intrinsic hadronic contamination in the NA64$-e$ high-purity $e^+/e^-$ beam at CERN
Authors:
Yu. M. Andreev,
D. Banerjee,
B. Banto Oberhauser,
J. Bernhard,
P. Bisio,
M. Bondi,
A. Celentano,
N. Charitonidis,
A. G. Chumakov,
D. Cooke,
P. Crivelli,
E. Depero,
A. V. Dermenev,
S. V. Donskov,
R. R. Dusaev,
T. Enik,
V. N. Frolov,
A. Gardikiotis,
S. G. Gerassimov,
S. N. Gninenko,
M. H"osgen,
M. Jeckel,
V. A. Kachanov,
Y. Kambar,
A. E. Karneyeu
, et al. (43 additional authors not shown)
Abstract:
In this study, we present the measurement of the intrinsic hadronic contamination at the CERN SPS H4 beamline configured to transport electrons and positrons at 100 GeV/c momentum. The analysis was performed using data collected by the NA64-$e$ experiment in 2022. Our study is based on calorimetric measurements, exploiting the different interaction mechanisms of electrons and hadrons in the NA64-E…
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In this study, we present the measurement of the intrinsic hadronic contamination at the CERN SPS H4 beamline configured to transport electrons and positrons at 100 GeV/c momentum. The analysis was performed using data collected by the NA64-$e$ experiment in 2022. Our study is based on calorimetric measurements, exploiting the different interaction mechanisms of electrons and hadrons in the NA64-ECAL and NA64-HCAL detectors. We determined the intrinsic hadronic contamination by comparing the results obtained using the nominal electron/positron beamline configuration with those obtained in a dedicated setup, in which only hadrons im**ed on the detector. The significant differences in the experimental signatures of electrons and hadrons motivated our approach, resulting in a small and well-controlled systematic uncertainty for the measurement. Our study allowed us to precisely determine the intrinsic hadronic contamination, which represents a crucial parameter for the NA64 experiment in which the hadron contaminants may result in non-trivial backgrounds. Moreover, we performed dedicated Monte Carlo simulations for the hadron production induced by the primary T2 target. We found a good agreement between measurements and simulation results, confirming the validity of the applied methodology and our evaluation of the intrinsic hadronic contamination.
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Submitted 11 October, 2023; v1 submitted 30 May, 2023;
originally announced May 2023.
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Constraining Light Thermal Inelastic Dark Matter with NA64
Authors:
Martina Mongillo,
Asli Abdullahi,
Benjamin Banto Oberhauser,
Paolo Crivelli,
Matheus Hostert,
Daniele Massaro,
Laura Molina Bueno,
Silvia Pascoli
Abstract:
A vector portal between the Standard Model and the dark sector is a predictive and compelling framework for thermal dark matter. Through co-annihilations, models of inelastic dark matter (iDM) and inelastic Dirac dark matter (i2DM) can reproduce the observed relic density in the MeV to GeV mass range without violating cosmological limits. In these scenarios, the vector mediator behaves like a semi…
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A vector portal between the Standard Model and the dark sector is a predictive and compelling framework for thermal dark matter. Through co-annihilations, models of inelastic dark matter (iDM) and inelastic Dirac dark matter (i2DM) can reproduce the observed relic density in the MeV to GeV mass range without violating cosmological limits. In these scenarios, the vector mediator behaves like a semi-visible particle, evading traditional bounds on visible or invisible resonances, and uncovering new parameter space to explain the muon $(g-2)$ anomaly. By means of a more inclusive signal definition at the NA64 experiment, we place new constraints on iDM and i2DM using a missing energy technique. With a recast-based analysis, we contextualize the NA64 exclusion limits in parameter space and estimate the reach of the newly collected and expected future NA64 data. Our results motivate the development of an optimized search program for semi-visible particles, in which fixed-target experiments like NA64 provide a powerful probe in the sub-GeV mass range.
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Submitted 10 February, 2023;
originally announced February 2023.
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Argon milling induced decoherence mechanisms in superconducting quantum circuits
Authors:
J. Van Damme,
Ts. Ivanov,
P. Favia,
T. Conard,
J. Verjauw,
R. Acharya,
D. Perez Lozano,
B. Raes,
J. Van de Vondel,
A. M. Vadiraj,
M. Mongillo,
D. Wan,
J. De Boeck,
A. Potočnik,
K. De Greve
Abstract:
The fabrication of superconducting circuits requires multiple deposition, etch and cleaning steps, each possibly introducing material property changes and microscopic defects. In this work, we specifically investigate the process of argon milling, a potentially coherence limiting step, using niobium and aluminum superconducting resonators as a proxy for surface-limited behavior of qubits. We find…
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The fabrication of superconducting circuits requires multiple deposition, etch and cleaning steps, each possibly introducing material property changes and microscopic defects. In this work, we specifically investigate the process of argon milling, a potentially coherence limiting step, using niobium and aluminum superconducting resonators as a proxy for surface-limited behavior of qubits. We find that niobium microwave resonators exhibit an order of magnitude decrease in quality-factors after surface argon milling, while aluminum resonators are resilient to the same process. Extensive analysis of the niobium surface shows no change in the suboxide composition due to argon milling, while two-tone spectroscopy measurements reveal an increase in two-level system electrical dipole moments, indicating a structurally altered niobium oxide hosting larger two-level system defects. However, a short dry etch can fully recover the argon milling induced losses on niobium, offering a potential route towards state-of-the-art overlap Josephson junction qubits with niobium circuitry.
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Submitted 7 February, 2023;
originally announced February 2023.
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Low charge noise quantum dots with industrial CMOS manufacturing
Authors:
Asser Elsayed,
Mohamed Shehata,
Clement Godfrin,
Stefan Kubicek,
Shana Massar,
Yann Canvel,
Julien Jussot,
George Simion,
Massimo Mongillo,
Danny Wan,
Bogdan Govoreanu,
Iuliana P. Radu,
Ruoyu Li,
Pol Van Dorpe,
Kristiaan De Greve
Abstract:
Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale uniformity and high device yield, but off the shelf transistor processes cannot be directly transferred to qubit structures due to the different designs and oper…
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Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale uniformity and high device yield, but off the shelf transistor processes cannot be directly transferred to qubit structures due to the different designs and operation conditions. To therefore leverage the know-how of the micro-electronics industry, we customize a 300mm wafer fabrication line for silicon MOS qubit integration. With careful optimization and engineering of the MOS gate stack, we report stable and uniform quantum dot operation at the Si/SiOx interface at milli-Kelvin temperature. We extract the charge noise in different devices and under various operation conditions, demonstrating a record-low average noise level of 0.61 $μ$eV/${\sqrt{Hz}}$ at 1 Hz and even below 0.1 $μ$eV/${\sqrt{Hz}}$ for some devices and operating conditions. By statistical analysis of the charge noise with different operation and device parameters, we show that the noise source can indeed be well described by a two-level fluctuator model. This reproducible low noise level, in combination with uniform operation of our quantum dots, marks CMOS manufactured MOS spin qubits as a mature and highly scalable platform for high fidelity qubits.
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Submitted 13 December, 2022;
originally announced December 2022.
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Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers
Authors:
D. P. Lozano,
M. Mongillo,
X. Piao,
S. Couet,
D. Wan,
Y. Canvel,
A. M. Vadiraj,
Ts. Ivanov,
J. Verjauw,
R. Acharya,
J. Van Damme,
F. A. Mohiyaddin,
J. Jussot,
P. P. Gowda,
A. Pacco,
B. Raes,
J. Van de Vondel,
I. P. Radu,
B. Govoreanu,
J. Swerts,
A. Potočnik,
K. De Greve
Abstract:
The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised…
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The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised on sapphire substrates, which is incompatible with advanced processing in industry-scale fabrication facilities. Here, we demonstrate the fabrication of high-quality factor α-tantalum resonators directly on silicon wafers over a variety of metal deposition conditions and perform a comprehensive material and electrical characterization study. By comparing experiments with simulated resonator loss, we demonstrate that two-level-system loss is dominated by surface oxide contributions and not the substrate-metal interface. Our study paves the way to large scale manufacturing of low-loss superconducting circuits and to materials-driven advancements in superconducting circuit performance.
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Submitted 30 November, 2022; v1 submitted 29 November, 2022;
originally announced November 2022.
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Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
Authors:
M. Mohamed El Kordy Shehata,
George Simion,
Ruoyu Li,
Fahd A. Mohiyaddin,
Danny Wan,
Massimo Mongillo,
Bogdan Govoreanu,
Iuliana Radu,
Kristiaan De Greve,
Pol Van Dorpe
Abstract:
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space i…
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The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies.
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Submitted 22 August, 2023; v1 submitted 10 October, 2022;
originally announced October 2022.
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Overcoming I/O bottleneck in superconducting quantum computing: multiplexed qubit control with ultra-low-power, base-temperature cryo-CMOS multiplexer
Authors:
Rohith Acharya,
Steven Brebels,
Alexander Grill,
Jeroen Verjauw,
Tsvetan Ivanov,
Daniel Perez Lozano,
Danny Wan,
Jacques van Damme,
A. M. Vadiraj,
Massimo Mongillo,
Bogdan Govoreanu,
Jan Craninckx,
I. P. Radu,
Kristiaan de Greve,
Georges Gielen,
Francky Catthoor,
Anton Potočnik
Abstract:
Large-scale superconducting quantum computing systems entail high-fidelity control and readout of large numbers of qubits at millikelvin temperatures, resulting in a massive input-output bottleneck. Cryo-electronics, based on complementary metal-oxide-semiconductor (CMOS) technology, may offer a scalable and versatile solution to overcome this bottleneck. However, detrimental effects due to cross-…
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Large-scale superconducting quantum computing systems entail high-fidelity control and readout of large numbers of qubits at millikelvin temperatures, resulting in a massive input-output bottleneck. Cryo-electronics, based on complementary metal-oxide-semiconductor (CMOS) technology, may offer a scalable and versatile solution to overcome this bottleneck. However, detrimental effects due to cross-coupling between the electronic and thermal noise generated during cryo-electronics operation and the qubits need to be avoided. Here we present an ultra-low power radio-frequency (RF) multiplexing cryo-electronics solution operating below 15 mK that allows for control and interfacing of superconducting qubits with minimal cross-coupling. We benchmark its performance by interfacing it with a superconducting qubit and observe that the qubit's relaxation times ($T_1$) are unaffected, while the coherence times ($T_2$) are only minimally affected in both static and dynamic operation. Using the multiplexer, single qubit gate fidelities above 99.9%, i.e., well above the threshold for surface-code based quantum error-correction, can be achieved with appropriate thermal filtering. In addition, we demonstrate the capability of time-division-multiplexed qubit control by dynamically windowing calibrated qubit control pulses. Our results show that cryo-CMOS multiplexers could be used to significantly reduce the wiring resources for large-scale qubit device characterization, large-scale quantum processor control and quantum error correction protocols.
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Submitted 26 September, 2022;
originally announced September 2022.
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Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms
Authors:
J. Verjauw,
R. Acharya,
J. Van Damme,
Ts. Ivanov,
D. Perez Lozano,
F. A. Mohiyaddin,
D. Wan,
J. Jussot,
A. M. Vadiraj,
M. Mongillo,
M. Heyns,
I. Radu,
B. Govoreanu,
A. Potočnik
Abstract:
As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced process control in industry-scale CMOS fabrication facilities, different processing methods will be required. In particular, the double-angle evaporation and li…
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As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced process control in industry-scale CMOS fabrication facilities, different processing methods will be required. In particular, the double-angle evaporation and lift-off techniques used for current, state-of-the art superconducting qubits are generally incompatible with modern day manufacturable processes. Here, we demonstrate a fully CMOS compatible qubit fabrication method, and show results from overlap Josephson junction devices with long coherence and relaxation times, on par with the state-of-the-art. We experimentally verify that Argon milling - the critical step during junction fabrication - and a subtractive etch process nevertheless result in qubits with average qubit energy relaxation times T1 reaching 70 $μ$s, with maximum values exceeding 100 $μ$s. Furthermore, we show that our results are still limited by surface losses and not, crucially, by junction losses. The presented fabrication process therefore heralds an important milestone towards a manufacturable 300 mm CMOS process for high-coherence superconducting qubits and has the potential to advance the scaling of superconducting device architectures.
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Submitted 21 February, 2022;
originally announced February 2022.
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Investigation of microwave loss induced by oxide regrowth in high-Q Nb resonators
Authors:
J. Verjauw,
A. Potočnik,
M. Mongillo,
R. Acharya,
F. Mohiyaddin,
G. Simion,
A. Pacco,
Ts. Ivanov,
D. Wan,
A. Vanleenhove,
L. Souriau,
J. Jussot,
A. Thiam,
J. Swerts,
X. Piao,
S. Couet,
M. Heyns,
B. Govoreanu,
I. Radu
Abstract:
The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microwave loss from these interfaces by proper surface treatments is key to push the device performance forward. Here, we study niobium resonators after removing the native oxides with a hydrofluoric acid etch. We investigate…
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The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microwave loss from these interfaces by proper surface treatments is key to push the device performance forward. Here, we study niobium resonators after removing the native oxides with a hydrofluoric acid etch. We investigate the reappearance of microwave losses introduced by surface oxides that grow after exposure to the ambient environment. We find that losses in quantum devices are reduced by an order of magnitude, with internal Q-factors reaching up to 7 $\cdot$ 10$^6$ in the single photon regime, when devices are exposed to ambient conditions for 16 min. Furthermore, we observe that Nb2O5 is the only surface oxide that grows significantly within the first 200 hours, following the extended Cabrera-Mott growth model. In this time, microwave losses scale linearly with the Nb$_2$O$_5$ thickness, with an extracted loss tangent tan$δ$ = 9.9 $\cdot$ 10$^{-3}$. Our findings are of particular interest for devices spanning from superconducting qubits, quantum-limited amplifiers, microwave kinetic inductance detectors to single photon detectors.
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Submitted 22 December, 2020; v1 submitted 19 December, 2020;
originally announced December 2020.
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Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation
Authors:
Anton Potočnik,
Steven Brebels,
Jeroen Verjauw,
Rohith Acharya,
Alexander Grill,
Danny Wan,
Massimo Mongillo,
Ruoyu Li,
Tsvetan Ivanov,
Steven Van Winckel,
Fahd A. Mohiyaddin,
Bogdan Govoreanu,
Jan Craninckx,
I. P. Radu
Abstract:
Quantum computers based on solid state qubits have been a subject of rapid development in recent years. In current Noisy Intermediate-Scale Quantum (NISQ) technology, each quantum device is controlled and characterised though a dedicated signal line between room temperature and base temperature of a dilution refrigerator. This approach is not scalable and is currently limiting the development of l…
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Quantum computers based on solid state qubits have been a subject of rapid development in recent years. In current Noisy Intermediate-Scale Quantum (NISQ) technology, each quantum device is controlled and characterised though a dedicated signal line between room temperature and base temperature of a dilution refrigerator. This approach is not scalable and is currently limiting the development of large-scale quantum system integration and quantum device characterisation. Here we demonstrate a custom designed cryo-CMOS multiplexer operating at 32 mK. The multiplexer exhibits excellent microwave properties up to 10 GHz at room and millikelvin temperatures. We have increased the characterisation throughput with the multiplexer by measuring four high-quality factor superconducting resonators using a single input and output line in a dilution refrigerator. Our work lays the foundation for large-scale microwave quantum device characterisation and has the perspective to address the wiring problem of future large-scale quantum computers.
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Submitted 14 September, 2021; v1 submitted 23 November, 2020;
originally announced November 2020.
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PtSi Clustering In Silicon Probed by Transport Spectroscopy
Authors:
Massimo Mongillo,
Panayotis Spathis,
Georgios Katsaros,
Riccardo Rurali,
Xavier Cartoixa,
Pascal Gentile,
Silvano de Franceschi
Abstract:
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phen…
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Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states.
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Submitted 21 July, 2014;
originally announced July 2014.
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Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires
Authors:
Massimo Mongillo,
Panayotis Spathis,
Georgios Katsaros,
Pascal Gentile,
Silvano De Franceschi
Abstract:
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surroun…
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We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid-helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one.
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Submitted 7 August, 2012;
originally announced August 2012.
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Joule-assisted silicidation for short-channel silicon nanowire devices
Authors:
Massimo Mongillo,
Panayotis Spathis,
Georgios Katsaros,
Pascal Gentile,
Marc Sanquer,
Silvano De Franceschi
Abstract:
We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-si…
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We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel- silicide devices with controlled silicon channel length down to 8 nm.
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Submitted 25 October, 2011;
originally announced October 2011.
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Quantum transport in GaN/AlN double-barrier heterostructure nanowires
Authors:
R. Songmuang,
G. Katsaros,
E. Monroy,
P. Spathis,
C. Bourgeral,
M. Mongillo,
S. De Franceschi
Abstract:
We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type do** modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped mi…
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We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type do** modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped middle region, forming single or multiple islands with a characteristic length of ~100 nm. The incorporation of two AlN tunnel barriers causes confinement to occur within the GaN well in between. In the case of 6-nm-thick wells and 2-nm-thick barriers, we observe characteristic signatures of Coulomb-blockaded transport in single quantum dots with discrete energy states. For narrower wells and barriers, Coulomb-blockade effects do not play a significant role while the onset of resonant tunneling via the confined quantum levels is accompanied by a negative differential resistance surviving up to ~150 K.
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Submitted 20 May, 2010;
originally announced May 2010.
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Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon
Authors:
G. Katsaros,
P. Spathis,
M. Stoffel,
F. Fournel,
M. Mongillo,
V. Bouchiat,
F. Lefloch,
A. Rastelli,
O. G. Schmidt,
S. De Franceschi
Abstract:
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made b…
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The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductorsemiconductor devices, such as resonant supercurrent transistors, when the dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling strength with pronounced gate-voltage and magnetic-field dependence.
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Submitted 11 May, 2010;
originally announced May 2010.
