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Ultrathin, sputter-deposited, amorphous alloy films of ruthenium and molybdenum
Authors:
G. Yetik,
A. Troglia,
S. Farokhipoor,
S. van Vliet,
J. Momand,
B. J. Kooi,
R. Bliem,
J. W. M. Frenken
Abstract:
Microscopy and diffraction measurements are presented of ultrathin binary alloy films of ruthenium and molybdenum that are obtained by standard sputter deposition. For compositions close to Ru50Mo50, we find the films to be amorphous. The amorphicity of the films is accompanied by a significant reduction of the roughness with respect to the roughness of equally thick films of either ruthenium or m…
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Microscopy and diffraction measurements are presented of ultrathin binary alloy films of ruthenium and molybdenum that are obtained by standard sputter deposition. For compositions close to Ru50Mo50, we find the films to be amorphous. The amorphicity of the films is accompanied by a significant reduction of the roughness with respect to the roughness of equally thick films of either ruthenium or molybdenum. We ascribe this to the absence of the grain structure that is characteristic of the polycrystalline films of the separate elements.
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Submitted 17 August, 2022; v1 submitted 8 April, 2022;
originally announced April 2022.
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Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires
Authors:
Ghada Badawy,
Bomin Zhang,
Tomáš Rauch,
Jamo Momand,
Sebastian Koelling,
Jason Jung,
Sasa Gazibegovic,
Oussama Moutanabbir,
Bart J. Kooi,
Silvana Botti,
Marcel A. Verheijen,
Sergey M. Frolov,
Erik P. A. M. Bakkers
Abstract:
Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topol…
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Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research. Here, we combine the II-VI cadmium telluride (CdTe) with the III-V InSb in the form of core-shell (InSb-CdTe) nanowires and explore potential applications based on the electronic structure of the InSb-CdTe interface and the epitaxy of CdTe on the InSb nanowires. We determine the electronic structure of the InSb-CdTe interface using density functional theory and extract a type-I band alignment with a small conduction band offset ($\leq$ 0.3 eV). These results indicate the potential application of these shells for surface passivation or as tunnel barriers in combination with superconductors. In terms of the structural quality of these shells, we demonstrate that the lattice-matched CdTe can be grown epitaxially on the InSb nanowires without interfacial strain or defects. These epitaxial shells do not introduce disorder to the InSb nanowires as indicated by the comparable field-effect mobility we measure for both uncapped and CdTe-capped nanowires.
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Submitted 9 November, 2021;
originally announced November 2021.
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Interfacial Spin-Orbit Torques and Magnetic Anisotropy in WSe$_{2}$/Permalloy Bilayers
Authors:
Jan Hidding,
Sytze H. Tirion,
Jamo Momand,
Alexey Kaverzin,
Maxim Mostovoy,
Bart J. van Wees,
Bart J. Kooi,
Marcos H. D. Guimarães
Abstract:
Transition metal dichalcogenides (TMDs) are promising materials for efficient generation of current-induced spin-orbit torques on an adjacent ferromagnetic layer. Numerous effects, both interfacial and bulk, have been put forward to explain the different torques previously observed. Thus far, however, there is no clear consensus on the microscopic origin underlying the spin-orbit torques observed…
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Transition metal dichalcogenides (TMDs) are promising materials for efficient generation of current-induced spin-orbit torques on an adjacent ferromagnetic layer. Numerous effects, both interfacial and bulk, have been put forward to explain the different torques previously observed. Thus far, however, there is no clear consensus on the microscopic origin underlying the spin-orbit torques observed in these TMD/ferromagnet bilayers. To shine light on the microscopic mechanisms at play, here we perform thickness dependent spin-orbit torque measurements on the semiconducting WSe$_{2}$/permalloy bilayer with various WSe$_{2}$ layer thickness, down to the monolayer limit. We observe a large out-of-plane field-like torque with spin-torque conductivities up to $1\times10^4 ({\hbar}/2e) (Ωm)^{-1}$. For some devices, we also observe a smaller in-plane antidam**-like torque, with spin-torque conductivities up to $4\times10^{3} ({\hbar}/2e) (Ωm)^{-1}$, comparable to other TMD-based systems. Both torques show no clear dependence on the WSe$_{2}$ thickness, as expected for a Rashba system. Unexpectedly, we observe a strong in-plane magnetic anisotropy - up to about $6.6\times10^{4} erg/cm^{3}$ - induced in permalloy by the underlying hexagonal WSe$_{2}$ crystal. Using scanning transmission electron microscopy, we confirm that the easy axis of the magnetic anisotropy is aligned to the armchair direction of the WSe$_{2}$. Our results indicate a strong interplay between the ferromagnet and TMD, and unveil the nature of the spin-orbit torques in TMD-based devices. These findings open new avenues for possible methods for optimizing the torques and the interaction with interfaced magnets, important for future non-volatile magnetic devices for data processing and storage.
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Submitted 9 September, 2021; v1 submitted 22 July, 2021;
originally announced July 2021.
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Differences in Sb2Te3 growth by pulsed laser and sputter deposition
Authors:
**g Ning,
J. C. Martinez,
Jamo Momand,
Heng Zhang,
Subodh C. Tiwari,
Fuyuki Shimojo,
Aiichiro Nakano,
Rajiv K. Kalia,
Priya Vashishta,
Paulo S. Branicio,
Bart J. Kooi,
Robert E. Simpson
Abstract:
High quality Van der Waals chalcogenides are important for phase change data storage, thermoelectrics, and spintronics. Using a combination of statistical design of experiments and density functional theory, we clarify how the out-of-equilibrium van der Waals epitaxial deposition methods can improve the crystal quality of Sb2Te3 films. We compare films grown by radio frequency sputtering and pulse…
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High quality Van der Waals chalcogenides are important for phase change data storage, thermoelectrics, and spintronics. Using a combination of statistical design of experiments and density functional theory, we clarify how the out-of-equilibrium van der Waals epitaxial deposition methods can improve the crystal quality of Sb2Te3 films. We compare films grown by radio frequency sputtering and pulsed laser deposition (PLD). The growth factors that influence the crystal quality for each method are different. For PLD grown films a thin amorphous Sb2Te3 seed layer most significantly influences the crystal quality. In contrast, the crystalline quality of films grown by sputtering is rather sensitive to the deposition temperature and less affected by the presence of a seed layer. This difference is somewhat surprising as both methods are out-of-thermal-equilibrium plasma-based methods. Non-adiabatic quantum molecular dynamics simulations show that this difference originates from the density of excited atoms in the plasma. The PLD plasma is more intense and with higher energy than that used in sputtering, and this increases the electronic temperature of the deposited atoms, which concomitantly increases the adatom diffusion lengths in PLD. In contrast, the adatom diffusivity is dominated by the thermal temperature for sputter grown films. These results explain the wide range of Sb2Te3 and superlattice crystal qualities observed in the literature. These results indicate that, contrary to popular belief, plasma-based deposition methods are suitable for growing high quality crystalline chalcogenides.
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Submitted 14 September, 2020; v1 submitted 13 September, 2020;
originally announced September 2020.
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Single-source, solvent-free, room temperature deposition of black $γ$-CsSnI$_3$ films
Authors:
Vivien M. Kiyek,
Yorick A. Birkhölzer,
Yury Smirnov,
Martin Ledinsky,
Zdenek Remes,
Jamo Momand,
Bart J. Kooi,
Gertjan Koster,
Guus Rijnders,
Monica Morales-Masis
Abstract:
The presence of a non-optically active polymorph (yellow-phase) competing with the optically active polymorph (black $γ$-phase) at room temperature in CsSnI3 and the susceptibility of Sn to oxidation, represent two of the biggest obstacles for the exploitation of CsSnI3 in optoelectronic devices. Here room-temperature single-source in vacuum deposition of smooth black $γ$ - CsSnI3 thin films is re…
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The presence of a non-optically active polymorph (yellow-phase) competing with the optically active polymorph (black $γ$-phase) at room temperature in CsSnI3 and the susceptibility of Sn to oxidation, represent two of the biggest obstacles for the exploitation of CsSnI3 in optoelectronic devices. Here room-temperature single-source in vacuum deposition of smooth black $γ$ - CsSnI3 thin films is reported. This has been done by fabricating a solid target by completely solvent-free mixing of CsI and SnI2 powders and isostatic pressing. By controlled laser ablation of the solid target on an arbitrary substrate at room temperature, the formation of CsSnI3 thin films with optimal optical properties is demonstrated. The films present a band gap of 1.32 eV, a sharp absorption edge and near-infrared photoluminescence emission. These properties and X-ray diffraction of the thin films confirmed the formation of the orthorhombic (B-$γ$) perovskite phase. The thermal stability of the phase was ensured by applying in situ an Al2O$_3$ cap** layer. This work demonstrates the potential of pulsed laser deposition as a volatility-insensitive single-source growth technique of halide perovskites and represents a critical step forward in the development and future scalability of inorganic lead-free halide perovskites.
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Submitted 29 April, 2020;
originally announced June 2020.
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Resolving hydrogen atoms at metal-metal hydride interfaces
Authors:
Sytze de Graaf,
Jamo Momand,
Christoph Mitterbauer,
Sorin Lazar,
Bart J. Kooi
Abstract:
Hydrogen as a fuel can be stored safely with high volumetric density in metals. It can, however, also be detrimental to metals causing embrittlement. Understanding fundamental behavior of hydrogen at atomic scale is key to improve the properties of metal-metal hydride systems. However, currently, there is no robust technique capable of visualizing hydrogen atoms. Here, we demonstrate that hydrogen…
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Hydrogen as a fuel can be stored safely with high volumetric density in metals. It can, however, also be detrimental to metals causing embrittlement. Understanding fundamental behavior of hydrogen at atomic scale is key to improve the properties of metal-metal hydride systems. However, currently, there is no robust technique capable of visualizing hydrogen atoms. Here, we demonstrate that hydrogen atoms can be imaged unprecedentedly with integrated differential phase contrast, a recently developed technique performed in a scanning transmission electron microscope. Images of the titanium-titanium monohydride interface reveal remarkable stability of the hydride phase, originating from the interplay between compressive stress and interfacial coherence. We also uncovered, thirty years after three models were proposed, which one describes the position of the hydrogen atoms with respect to the interface. Our work enables novel research on hydrides and is extendable to all materials containing light and heavy elements, including oxides, nitrides, carbides and borides.
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Submitted 20 June, 2019; v1 submitted 21 December, 2018;
originally announced December 2018.
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A rhombohedral ferroelectric phase in epitaxially-strained Hf0.5Zr0.5O2 thin films
Authors:
Yingfen Wei,
Pavan Nukala,
Mart Salverda,
Sylvia Matzen,
Hong Jian Zhao,
Jamo Momand,
Arnoud Everhardt,
Graeme R. Blake,
Philippe Lecoeur,
Bart J. Kooi,
Jorge Íñiguez,
Brahim Dkhil,
Beatriz Noheda
Abstract:
After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards t…
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After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards this end, thin films with increased crystal quality are needed. We report the epitaxial growth of Hf0.5Zr0.5O2 (HZO) thin films on (001)-oriented La0.7Sr0.3MnO3/SrTiO3 (STO) substrates. The films, which are under epitaxial compressive strain and are predominantly (111)-oriented, display large FE polarization values up to 34 μC/cm2 and do not need wake-up cycling. Structural characterization reveals a rhombohedral phase, different from the commonly reported polar orthorhombic phase. This unexpected finding allows us to propose a compelling model for the formation of the FE phase. In addition, these results point towards nanoparticles of simple oxides as a vastly unexplored class of nanoscale ferroelectrics.
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Submitted 26 January, 2018;
originally announced January 2018.
