Showing 1–2 of 2 results for author: Mollick, S A

Nanorippling of GaAs (001) surface near the threshold energy of sputtering at normal ion incidence

Authors: Debasree Chowdhury, Debabrata Ghose*, Safiul Alam Mollick, Biswarup Satpati, Satya Ranjan Bhattacharyya

Abstract: Ripple formation driven by Ehrlich-Schwoebel barrier is evidenced for normal incidence 30 eV Ar+ bombardment of GaAs (001) surface at elevated target temperature. The pattern follows the symmetry of the bombarded crystal surface. The results can be described by a non-linear continuum equation based on biased diffusion of adspecies created by ion impact. Ripple formation driven by Ehrlich-Schwoebel barrier is evidenced for normal incidence 30 eV Ar+ bombardment of GaAs (001) surface at elevated target temperature. The pattern follows the symmetry of the bombarded crystal surface. The results can be described by a non-linear continuum equation based on biased diffusion of adspecies created by ion impact. △ Less

Submitted 17 July, 2014; originally announced July 2014.

Formation of ripple pattern on silicon surface by grazing incidence ion beam sputtering

Authors: Safiul A. Mollick, D. Ghose

Abstract: Off-normal low energy ion beam sputtering of solid surfaces often leads to morphological instabilities resulting in the spontaneous formation of ripple structures in nanometer length scales. In the case of Si surfaces at ambient temperature, ripple formation is found to take place normally at lower incident angles with the wave vector parallel to the ion beam direction. The absence of ripple pat… ▽ More Off-normal low energy ion beam sputtering of solid surfaces often leads to morphological instabilities resulting in the spontaneous formation of ripple structures in nanometer length scales. In the case of Si surfaces at ambient temperature, ripple formation is found to take place normally at lower incident angles with the wave vector parallel to the ion beam direction. The absence of ripple pattern on Si surface at larger angles is due to the dominance of ion beam polishing effect. We have shown that a gentle chemical roughening of the starting surface morphology can initiate ripple pattern under grazing incidence ion beam sputtering, where the ripple wave vector is perpendicular to the ion beam direction. The characteristics of the perpendicular mode ripples are studied as a function of pristine surface roughness and ion fluence. The quality of the morphological structure is assessed from the analysis of ion induced topological defects. △ Less

Submitted 8 April, 2009; originally announced April 2009.