-
A photosensor employing data-driven binning for ultrafast image recognition
Authors:
Lukas Mennel,
Aday J. Molina-Mendoza,
Matthias Paur,
Dmitry K. Polyushkin,
Dohyun Kwak,
Miriam Giparakis,
Maximilian Beiser,
Aaron Maxwell Andrews,
Thomas Mueller
Abstract:
Pixel binning is a technique, widely used in optical image acquisition and spectroscopy, in which adjacent detector elements of an image sensor are combined into larger pixels. This reduces the amount of data to be processed as well as the impact of noise, but comes at the cost of a loss of information. Here, we push the concept of binning to its limit by combining a large fraction of the sensor e…
▽ More
Pixel binning is a technique, widely used in optical image acquisition and spectroscopy, in which adjacent detector elements of an image sensor are combined into larger pixels. This reduces the amount of data to be processed as well as the impact of noise, but comes at the cost of a loss of information. Here, we push the concept of binning to its limit by combining a large fraction of the sensor elements into a single superpixel that extends over the whole face of the chip. For a given pattern recognition task, its optimal shape is determined from training data using a machine learning algorithm. We demonstrate the classification of optically projected images from the MNIST dataset on a nanosecond timescale, with enhanced sensitivity and without loss of classification accuracy. Our concept is not limited to imaging alone but can also be applied in optical spectroscopy or other sensing applications.
△ Less
Submitted 20 November, 2021;
originally announced November 2021.
-
Real-time image processing with a 2D semiconductor neural network vision sensor
Authors:
Lukas Mennel,
Joanna Symonowicz,
Stefan Wachter,
Dmitry K. Polyushkin,
Aday J. Molina-Mendoza,
Thomas Mueller
Abstract:
In recent years, machine vision has taken huge leaps and is now becoming an integral part of various intelligent systems, including autonomous vehicles, robotics, and many others. Usually, visual information is captured by a frame-based camera, converted into a digital format, and processed afterwards using a machine learning algorithm such as an artificial neural network (ANN). A large amount of…
▽ More
In recent years, machine vision has taken huge leaps and is now becoming an integral part of various intelligent systems, including autonomous vehicles, robotics, and many others. Usually, visual information is captured by a frame-based camera, converted into a digital format, and processed afterwards using a machine learning algorithm such as an artificial neural network (ANN). A large amount of (mostly redundant) data being passed through the entire signal chain, however, results in low frame rates and large power consumption. Various visual data preprocessing techniques have thus been developed that allow to increase the efficiency of the subsequent signal processing in an ANN. Here, we demonstrate that an image sensor itself can constitute an ANN that is able to simultaneously sense and process optical images without latency. Our device is based on a reconfigurable two-dimensional (2D) semiconductor photodiode array, with the synaptic weights of the network being stored in a continuously tunable photoresponsivity matrix. We demonstrate both supervised and unsupervised learning and successfully train the sensor to classify and encode images, that are optically projected onto the chip, with a throughput of 20 million bins per second.
△ Less
Submitted 31 August, 2019;
originally announced September 2019.
-
Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors
Authors:
Matthias Paur,
Aday J. Molina-Mendoza,
Rudolf Bratschitsch,
Kenji Watanabe,
Takashi Taniguchi,
Thomas Mueller
Abstract:
Light emission from higher-order correlated excitonic states has been recently reported in hBN-encapsulated monolayer WSe2 and WS2 upon optical excitation. These exciton complexes are found to be bound states of excitons residing in opposite valleys in momentum space, a promising feature that could be employed in valleytronics or other novel optoelectronic devices. However, electrically-driven lig…
▽ More
Light emission from higher-order correlated excitonic states has been recently reported in hBN-encapsulated monolayer WSe2 and WS2 upon optical excitation. These exciton complexes are found to be bound states of excitons residing in opposite valleys in momentum space, a promising feature that could be employed in valleytronics or other novel optoelectronic devices. However, electrically-driven light emission from such exciton species is still lacking. Here we report electroluminescence from bright and dark excitons, negatively charged trions and neutral and negatively charged biexcitons, generated by a pulsed gate voltage, in hexagonal boron nitride encapsulated monolayer WSe2 and WS2 with graphene as electrode. By tailoring the pulse parameters we are able to tune the emission intensity of the different exciton species in both materials. We find the electroluminescence from charged biexcitons and dark excitons to be as narrow as 2.8 meV.
△ Less
Submitted 22 March, 2019; v1 submitted 10 December, 2018;
originally announced December 2018.
-
Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2
Authors:
Yue Niu,
Sergio Gonzalez-Abad,
Riccardo Frisenda,
Philipp Marauhn,
Matthias Drüppel,
Patricia Gant,
Robert Schmidt,
Najme S. Taghavi,
David Barcons,
Aday J. Molina-Mendoza,
Steffen Michaelis de Vasconcellos,
Rudolf Bratschitsch,
David Perez De Lara,
Michael Rohlfing,
Andres Castellanos-Gomez
Abstract:
The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques opened the door to study the optical properties of these nanomaterials. We presented a comprehensive study of the differential reflectance spectra of 2D semicond…
▽ More
The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques opened the door to study the optical properties of these nanomaterials. We presented a comprehensive study of the differential reflectance spectra of 2D semiconducting transition metal dichalcogenides (TMDCs), MoS2, MoSe2, WS2, and WSe2, with thickness ranging from one layer up to six layers. We analyzed the thickness-dependent energy of the different excitonic features, indicating the change in the band structure of the different TMDC materials with the number of layers. Our work provided a route to employ differential reflectance spectroscopy for determining the number of layers of MoS2, MoSe2, WS2, and WSe2.
△ Less
Submitted 10 October, 2018;
originally announced October 2018.
-
Atomically thin p-n junctions based on two-dimensional materials
Authors:
Riccardo Frisenda,
Aday J Molina-Mendoza,
Thomas Mueller,
Andres Castellanos-Gomez,
Herre SJ van der Zant
Abstract:
Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p-n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility to design novel p-n junction device architectures, not possible with conventional bulk semiconductors. In this Review we thoroughly describe the different 2D p-…
▽ More
Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p-n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility to design novel p-n junction device architectures, not possible with conventional bulk semiconductors. In this Review we thoroughly describe the different 2D p-n junction geometries studied so far, focusing on vertical (out-of-plane) and lateral (in-plane) 2D junctions and on mixed-dimensional junctions. We discuss the assembly methods developed to fabricate 2D p-n junctions making a distinction between top-down and bottom-up approaches. We also revise the literature studying the different applications of these atomically thin p-n junctions in electronic and optoelectronic devices. We discuss experiments on 2D p-n junctions used as current rectifiers, photodetectors, solar cells and light emitting devices. The important electronics and optoelectronics parameters of the discussed devices are listed in a table to facilitate their comparison. We conclude the Review with a critical discussion about the future outlook and challenges of this incipient research field.
△ Less
Submitted 11 September, 2018;
originally announced September 2018.
-
High current density electrical breakdown of TiS3 nanoribbon-based field-effect transistors
Authors:
Aday J. Molina-Mendoza,
Joshua O. Island,
Wendel S. Paz,
Jose Manuel Clamagirand,
Jose Ramón Ares,
Eduardo Flores,
Fabrice Leardini,
Carlos Sánchez,
Nicolás Agraït,
Gabino Rubio-Bollinger,
Herre S. J. van der Zant,
Isabel J. Ferrer,
J. J. Palacios,
Andres Castellanos-Gomez
Abstract:
The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titani…
▽ More
The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titanium trisulfide (TiS3). We observe high breakdown current densities up to 1.7 10^6 A/cm^2 in TiS3 nanoribbon-based field-effect transistors which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current breakdown, we perform a thermogravimetric analysis of bulk TiS3 and compare the results with density functional theory (DFT) and Kinetic Monte Carlo calculations. We conclude that oxidation of TiS3 and subsequent desorption of sulfur atoms plays an important role in the electrical breakdown of the material in ambient conditions. Our results show that TiS3 is an attractive material for high power applications and lend insight to the thermal and defect activated mechanisms responsible for electrical breakdown in nanostructured devices.
△ Less
Submitted 18 April, 2017;
originally announced April 2017.
-
Gate Tunable Photovoltaic Effect in MoS2 vertical P-N Homostructures
Authors:
Simon A. Svatek,
Elisa Antolin,
Der-Yuh Lin,
Riccardo Frisenda,
Christoph Reuter,
Aday J. Molina-Mendoza,
Manuel Muñoz,
Nicolás Agraït,
Tsung-Shine Ko,
David Perez de Lara,
Andres Castellanos-Gomez
Abstract:
P-n junctions based on vertically stacked single or few layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or p-type, heterojunctions of different materials are typically fabricated to produce diode-like current rectification and photovoltaic response. Recently, artificial, s…
▽ More
P-n junctions based on vertically stacked single or few layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or p-type, heterojunctions of different materials are typically fabricated to produce diode-like current rectification and photovoltaic response. Recently, artificial, stable and substitutional do** of MoS2 into n- and p-type has been demonstrated. MoS2 is an interesting material to use for optoelectronic applications due to the potential of low-cost production in large quantities, strong light-matter interactions and chemical stability. Here we report the characterization of the optoelectronic properties of vertical homojunctions made by stacking few-layer flakes of MoS2:Fe (n-type) and MoS2:Nb (p-type). The junctions exhibit a peak external quantum efficiency of 4.7 %, a maximum open circuit voltage of 0.51 V, they are stable in air and their rectification characteristics and photovoltaic response are in excellent agreement to the Shockley diode model. The gate-tunability of the maximum output power, the ideality factor and the shunt resistance indicate that the dark current is dominated by trap-assisted recombination and that the photocurrent collection depends strongly on the spatial extent of the space charge region. We demonstrate a response time faster than 80 ms and highlight the potential to integrate such devices into quasi-transparent and flexible optoelectronics.
△ Less
Submitted 10 January, 2017;
originally announced February 2017.
-
Electronics and optoelectronics of quasi-one dimensional layered transition metal trichalcogenides
Authors:
Joshua O. Island,
Aday J. Molina-Mendoza,
Mariam Barawi,
Robert Biele,
Eduardo Flores,
Jose M. Clamagirand,
Jose R. Ares,
Carlos Sanchez,
Herre S. J. van der Zant,
Roberto D'Agosta,
Isabel J. Ferrer,
Andres Castellanos-Gomez
Abstract:
The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we r…
▽ More
The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV- 2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).
△ Less
Submitted 30 April, 2017; v1 submitted 6 February, 2017;
originally announced February 2017.
-
Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials
Authors:
Riccardo Frisenda,
Yue Niu,
Patricia Gant,
Aday J. Molina-Mendoza,
Robert Schmidt,
Rudolf Bratschitsch,
**xin Liu,
Lei Fu,
Dumitru Dumcenco,
Andras Kis,
David Perez De Lara,
Andres Castellanos-Gomez
Abstract:
Optical spectroscopy techniques such as differential reflectance and transmittance have proven to be very powerful techniques to study 2D materials. However, a thorough description of the experimental setups needed to carry out these measurements is lacking in the literature. We describe a versatile optical microscope setup to carry out differential reflectance and transmittance spectroscopy in 2D…
▽ More
Optical spectroscopy techniques such as differential reflectance and transmittance have proven to be very powerful techniques to study 2D materials. However, a thorough description of the experimental setups needed to carry out these measurements is lacking in the literature. We describe a versatile optical microscope setup to carry out differential reflectance and transmittance spectroscopy in 2D materials with a lateral resolution of ~1 micron in the visible and near-infrared part of the spectrum. We demonstrate the potential of the presented setup to determine the number of layers of 2D materials and to characterize their fundamental optical properties such as excitonic resonances. We illustrate its performance by studying mechanically exfoliated and chemical vapor-deposited transition metal dichalcogenide samples.
△ Less
Submitted 13 December, 2016;
originally announced December 2016.
-
Engineering the optoelectronic properties of MoS2 photodetectors through reversible noncovalent functionalization
Authors:
Aday J. Molina-Mendoza,
Luis Vaquero-Garzon,
Sofia Leret,
Leire de Juan-Fernández,
Emilio M. Pérez,
Andres Castellanos-Gomez
Abstract:
We present an easy drop-casting based functionalization of MoS2-based photodetectors that results in an enhancement of the photoresponse of about four orders of magnitude, reaching responsivities up to 100 A/W. The functionalization is technologically trivial, air-stable, fully reversible and reproducible, and opens the door to the combination of 2D-materials with molecular dyes for the developmen…
▽ More
We present an easy drop-casting based functionalization of MoS2-based photodetectors that results in an enhancement of the photoresponse of about four orders of magnitude, reaching responsivities up to 100 A/W. The functionalization is technologically trivial, air-stable, fully reversible and reproducible, and opens the door to the combination of 2D-materials with molecular dyes for the development of high performance photodetectors.
△ Less
Submitted 15 November, 2016;
originally announced November 2016.
-
Highly responsive UV-photodetectors based on single electrospun TiO2 nanofibres
Authors:
Aday J. Molina-Mendoza,
Alicia Moya,
Riccardo Frisenda,
Simon A. Svatek,
Patricia Gant,
Sergio Gonzalez-Abad,
Elisa Antolin,
Nicolás Agraït,
Gabino Rubio-Bollinger,
David Perez de Lara,
Juan J. Vilatela,
Andres Castellanos-Gomez
Abstract:
In this work we study the optoelectronic properties of individual TiO2 fibres produced through coupled sol-gel and electrospinning, by depositing them onto pre-patterned Ti/Au electrodes on SiO2/Si substrates. Transport measurements in the dark give a conductivity above 2*10^-5 S, which increases up to 8*10^-5 S in vacuum. Photocurrent measurements under UV-irradiation show high sensitivity (respo…
▽ More
In this work we study the optoelectronic properties of individual TiO2 fibres produced through coupled sol-gel and electrospinning, by depositing them onto pre-patterned Ti/Au electrodes on SiO2/Si substrates. Transport measurements in the dark give a conductivity above 2*10^-5 S, which increases up to 8*10^-5 S in vacuum. Photocurrent measurements under UV-irradiation show high sensitivity (responsivity of 90 A/W for 375 nm wavelength) and a response time to illumination of ~ 5 s, which is superior to state-of-the-art TiO2-based UV photodetectors. Both responsivity and response speed are higher in air than in vacuum, due to oxygen adsorbed on the TiO2 surface which traps photoexcited free electrons in the conduction band, thus reducing the recombination processes. The photodetectors are sensitive to light polarization, with an anisotropy ratio of 12%. These results highlight the interesting combination of large surface area and low 1D transport resistance in electrospun TiO2 fibres. The simplicity of the sol-gel/electrospinning synthesis method, combined with a fast response and high responsivity makes them attractive candidates for UV-photodetection in ambient conditions. We anticipate their high (photo) conductance is also relevant for photocatalysis and dye-sensitized solar cells.
△ Less
Submitted 3 November, 2016;
originally announced November 2016.
-
Franckeite: a naturally occurring van der Waals heterostructure
Authors:
Aday J. Molina-Mendoza,
Emerson Giovanelli,
Wendel S. Paz,
Miguel Angel Niño,
Joshua O. Island,
Charalambos Evangeli,
Lucía Aballe,
Michael Foerster,
Herre S. J. van der Zant,
Gabino Rubio-Bollinger,
Nicolás Agraït,
J. J. Palacios,
Emilio M. Pérez,
Andres Castellanos-Gomez
Abstract:
The fabrication of van der Waals heterostructures, artificial materials assembled by individually stacking atomically thin (2D) materials, is one of the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods which are cumbersome when fabricating multilayered stacks. Moreover, they tend to suffer from…
▽ More
The fabrication of van der Waals heterostructures, artificial materials assembled by individually stacking atomically thin (2D) materials, is one of the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods which are cumbersome when fabricating multilayered stacks. Moreover, they tend to suffer from poor control over the lattice orientations and the presence of unwanted adsorbates between the stacked layers. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type do**, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors (exploiting its narrow bandgap) and for p-n junctions based on the stacking of MoS2 (n-doped) and franckeite (p-doped)
△ Less
Submitted 21 June, 2016;
originally announced June 2016.
-
Centimeter-scale synthesis of ultrathin layered MoO3 by van der Waals epitaxy
Authors:
Aday J. Molina-Mendoza,
Jose Luis Lado,
Joshua Island,
Miguel Angel Niño,
Lucía Aballe,
Michael Foerster,
Flavio Y. Bruno,
Alejandro López-Moreno,
Luis Vaquero-Garzon,
Herre S. J. van der Zant,
Gabino Rubio-Bollinger,
Nicolas Agraït,
Emilio Perez,
Joaquin Fernandez-Rossier,
Andres Castellanos-Gomez
Abstract:
We report on the large-scale synthesis of highly oriented ultrathin MoO3 layers using a simple and low-cost atmospheric pressure by van der Waals epitaxy growth on muscovite mica substrates. By this method we are able to synthetize high quality centimeter-scale MoO3 crystals with thicknesses ranging from 1.4 nm (two layers) up to a few nanometers. The crystals can be easily transferred to an arbit…
▽ More
We report on the large-scale synthesis of highly oriented ultrathin MoO3 layers using a simple and low-cost atmospheric pressure by van der Waals epitaxy growth on muscovite mica substrates. By this method we are able to synthetize high quality centimeter-scale MoO3 crystals with thicknesses ranging from 1.4 nm (two layers) up to a few nanometers. The crystals can be easily transferred to an arbitrary substrate (such as SiO2) by a deterministic transfer method and extensively characterized to demonstrate the high quality of the resulting crystal. We also study the electronic band structure of the material by density functional theory calculations. Interestingly, the calculations demonstrate that bulk MoO3 has a rather weak electronic interlayer interaction and thus it presents a monolayer-like band structure. Finally, we demonstrate the potential of this synthesis method for optoelectronic applications by fabricating large-area field-effect devices (10 micrometers by 110 micrometers in lateral dimensions), finding responsivities of 30 mA/W for a laser power density of 13 mW/cm2 in the UV region of the spectrum and also as an electron acceptor in a MoS2-based field-effect transistor.
△ Less
Submitted 20 June, 2016; v1 submitted 14 December, 2015;
originally announced December 2015.
-
Electronic bandgap and exciton binding energy of layered semiconductor TiS3
Authors:
Aday J. Molina-Mendoza,
Mariam Barawi,
Robert Biele,
Eduardo Flores,
José R. Ares,
Carlos Sánchez,
Gabino Rubio-Bollinger,
Nicolás Agraït,
Roberto D'Agosta,
Isabel J. Ferrer,
Andres Castellanos-Gomez
Abstract:
We present a study of the electronic and optical bandgap in layered TiS3, an almost unexplored semiconductor that has attracted recent attention because of its large carrier mobility and inplane anisotropic properties, to determine its exciton binding energy. We combine scanning tunneling spectroscopy and photoelectrochemical measurements with random phase approximation and Bethe-Salpeter equation…
▽ More
We present a study of the electronic and optical bandgap in layered TiS3, an almost unexplored semiconductor that has attracted recent attention because of its large carrier mobility and inplane anisotropic properties, to determine its exciton binding energy. We combine scanning tunneling spectroscopy and photoelectrochemical measurements with random phase approximation and Bethe-Salpeter equation calculations to obtain the electronic and optical bandgaps and thus the exciton binding energy. We find experimental values for the electronic bandgap, optical bandgap and exciton binding energy of 1.2 eV, 1.07 eV and 130 meV, respectively, and 1.15 eV, 1.05 eV and 100 meV for the corresponding theoretical results. The exciton binding energy is orders of magnitude larger than that of common semiconductors and comparable to bulk transition metal dichalcogenides, making TiS3 ribbons a highly interesting material for optoelectronic applications and for studying excitonic phenomena even at room temperature.
△ Less
Submitted 21 September, 2015; v1 submitted 18 September, 2015;
originally announced September 2015.
