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Landau Level Single-Electron Pum**
Authors:
E. Pyurbeeva,
M. D. Blumenthal,
J. A. Mol,
H. Howe,
H. E. Beere,
T. Mitchell,
D. A. Ritchie,
M. Pepper
Abstract:
We present the first detailed study of the effect of a strong magnetic field on single-electron pum** in a device utilising a finger-gate split-gate configuration. In the quantum Hall regime, we demonstrate electron pum** from Landau levels in the leads, where the measurements exhibit pronounced oscillations in the lengths of the pum** plateaus with the magnetic field, reminiscent of Shubnik…
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We present the first detailed study of the effect of a strong magnetic field on single-electron pum** in a device utilising a finger-gate split-gate configuration. In the quantum Hall regime, we demonstrate electron pum** from Landau levels in the leads, where the measurements exhibit pronounced oscillations in the lengths of the pum** plateaus with the magnetic field, reminiscent of Shubnikov-de Haas oscillations. This similarity indicates that the pum** process is dependent on the density of states of the 2D electron gas over a narrow energy window. Based on these observations, we develop a new theoretical description of the operation of single-electron pumps which for the first time allows for the determination of the physical parameters of the experiment; such as the capture energy of the electrons, the broadening of the quantised Landau levels in the leads, and the quantum lifetime of the electrons.
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Submitted 19 June, 2024;
originally announced June 2024.
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Parallel refreshed cryogenic charge-locking array with low power dissipation
Authors:
Xinya Bian,
G Andrew D Briggs,
Jan A Mol
Abstract:
To build a large scale quantum circuit comprising millions of cryogenic qubits will require an efficient way to supply large numbers of classic control signals. Given the limited number of direct connections allowed from room temperature, multiple level of signal multiplexing becomes essential. The stacking of hardware to accomplish this task is highly dependent on the lowest level implementation…
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To build a large scale quantum circuit comprising millions of cryogenic qubits will require an efficient way to supply large numbers of classic control signals. Given the limited number of direct connections allowed from room temperature, multiple level of signal multiplexing becomes essential. The stacking of hardware to accomplish this task is highly dependent on the lowest level implementation of control electronics, of which an open question is the feasibility of mK integration. Such integration is preferred for signal transmission and wire interconnection, provided it is not limited by the large power dissipation involved. Novel cryogenic electronics that prioritises power efficiency has to be developed to meet the tight thermal budget. In this paper, we present a power efficient approach to implement charge-locking array.
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Submitted 27 March, 2024;
originally announced March 2024.
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Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
Authors:
Xinya Bian,
Hannah J Joyce,
Charles G Smith,
Michael J Kelly,
G Andrew D Briggs,
Jan A Mol
Abstract:
In this paper, we present a reconfigurable multiplex (MUX) setup that increases the throughput of electrical characterisation at cryogenic temperature. The setup separates the MUX circuitry from quantum device under test (qDUT), allowing qDUT chips to be exchanged easily and MUX chips to be reused. To interface with different types of qDUTs, board-level designs are incorporated to allow interconne…
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In this paper, we present a reconfigurable multiplex (MUX) setup that increases the throughput of electrical characterisation at cryogenic temperature. The setup separates the MUX circuitry from quantum device under test (qDUT), allowing qDUT chips to be exchanged easily and MUX chips to be reused. To interface with different types of qDUTs, board-level designs are incorporated to allow interconnects flexibly routed into different topology. MUXs are built based on a multiple level selective gating (MLSG) scheme, where the number of multiplexed output channels (interconnects) is exponentially dependent on the number of control lines. In the prototype setup presented in this paper, with 14 out of 44 existing wires from room temperature, 4 MUXs at cryogenic temperature can supply in total 128 interconnects to interface with qDUTs. We validate the MUX setup operation and assess the various limits existed by measuring k$Ω$ resistors made of $μ$m-size graphene ribbons. We further demonstrate the setup by performing charge transport measurement on 128 nm-size graphene quantum devices in a single cooling down.
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Submitted 27 March, 2024;
originally announced March 2024.
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Quantum Interference Enhances the Performance of Single-Molecule Transistors
Authors:
Zhixin Chen,
Iain M. Grace,
Steffen L. Woltering,
Lina Chen,
Alex Gee,
Jonathan Baugh,
G. Andrew D. Briggs,
Lapo Bogani,
Jan A. Mol,
Colin J. Lambert,
Harry L. Anderson,
James O. Thomas
Abstract:
An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low switching ratios and operating frequencies, combined with large subthreshold swings.1 The usual strategy to mitigate quantum effects has been to increase device…
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An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low switching ratios and operating frequencies, combined with large subthreshold swings.1 The usual strategy to mitigate quantum effects has been to increase device complexity, but theory shows that if quantum effects are exploited correctly, they can simultaneously lower energy consumption and boost device performance.2-6 Here, we demonstrate experimentally how the performance of molecular transistors can be improved when the resistive channel contains two destructively-interfering waves. We use a zinc-porphyrin coupled to graphene electrodes in a three-terminal transistor device to demonstrate a >104 conductance-switching ratio, a subthreshold swing at the thermionic limit, a > 7 kHz operating frequency, and stability over >105 cycles. This performance is competitive with the best nanoelectronic transistors. We fully map the antiresonance interference features in conductance, reproduce the behaviour by density functional theory calculations, and trace back this high performance to the coupling between molecular orbitals and graphene edge states. These results demonstrate how the quantum nature of electron transmission at the nanoscale can enhance, rather than degrade, device performance, and highlight directions for future development of miniaturised electronics.
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Submitted 17 April, 2023;
originally announced April 2023.
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Ordered Arrays of Gold Nanoparticles Crosslinked by Dithioacetate Linkers for Molecular devices
Authors:
Maryana Asaad,
Andrea. Vezzoli,
Abdalghani Daaoub,
Joanna Borowiec,
Eugenia Pyurbeeva,
Hatef Sadeghi,
Sara Sangtarash,
Simon J. Higgins,
Jan. A. Mol
Abstract:
The final performance of a molecular electronic device is determined by the chemical structure of the molecular wires used in its assembly. Molecular place-exchange was used to incorporate di-thioacetate terminated molecules into ordered arrays of dodecanethiol capped gold nanoparticles. X-ray photoelectron spectroscopy confirmed successful molecular replacement. Room-temperature molecular conduct…
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The final performance of a molecular electronic device is determined by the chemical structure of the molecular wires used in its assembly. Molecular place-exchange was used to incorporate di-thioacetate terminated molecules into ordered arrays of dodecanethiol capped gold nanoparticles. X-ray photoelectron spectroscopy confirmed successful molecular replacement. Room-temperature molecular conductance of a statistically large number of devices reveals that conductance is enhanced by up to two orders of magnitude for the di-thioacetate terminated molecules. Density functional theory transport calculations were performed on five different configurations of the di-thioacetate molecules between gold electrodes, and the calculated average conductance values are in good agreement with the conductance experimentally-observed trend. Our findings highlight important cooperative effects of bridging neighboring gold nanoparticles and choice of appropriate molecular wires when designing devices for efficient transport.
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Submitted 13 January, 2023;
originally announced January 2023.
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Non-equilibrium thermodynamics in a single-molecule quantum system
Authors:
E. Pyurbeeva,
J. O. Thomas,
J. A. Mol
Abstract:
Thermodynamic probes can be used to deduce microscopic internal dynamics of nanoscale quantum systems. Several direct entropy measurement protocols based on charge transport measurements have been proposed and experimentally applied to single-electron devices. To date, these methods have relied on (quasi-)equilibrium conditions between the nanoscale quantum system and its environment, which consti…
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Thermodynamic probes can be used to deduce microscopic internal dynamics of nanoscale quantum systems. Several direct entropy measurement protocols based on charge transport measurements have been proposed and experimentally applied to single-electron devices. To date, these methods have relied on (quasi-)equilibrium conditions between the nanoscale quantum system and its environment, which constitutes only a small subset of the experimental conditions available. In this paper, we establish a thermodynamic analysis method based on stochastic thermodynamics, that is valid far from equilibrium conditions, is applicable to a broad range of single-electron devices and allows us to find the difference in entropy between the charge states of the nanodevice, as well as a characteristic of any selection rules governing electron transfers. We apply this non-equilibrium entropy measurement protocol to a single-molecule device in which the internal dynamics can be described by a two-site Hubbard model.
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Submitted 20 December, 2022;
originally announced December 2022.
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Electronic measurements of entropy in meso- and nanoscale systems
Authors:
Eugenia Pyurbeeva,
Jan A. Mol,
Pascal Gehring
Abstract:
Entropy is one of the most fundamental quantities in physics. For systems with few degrees of freedom, the value of entropy provides a powerful insight into its microscopic dynamics, such as the number, degeneracy and relative energies of electronic states, the value of spin, degree of localisation and entanglement, and the emergence of exotic states such as non-Abelian anyons. As the size of a sy…
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Entropy is one of the most fundamental quantities in physics. For systems with few degrees of freedom, the value of entropy provides a powerful insight into its microscopic dynamics, such as the number, degeneracy and relative energies of electronic states, the value of spin, degree of localisation and entanglement, and the emergence of exotic states such as non-Abelian anyons. As the size of a system decreases, the conventional methods for measuring entropy, based on heat capacity, quickly become infeasible due to the requirement of increasingly accurate measurements of heat. Several methods to directly measure entropy of mesoscopic quantum systems have recently been developed. These methods use electronic measurements of charge, conductance and thermocurrent, rather than heat, and have been successfully applied to a wide range of systems, from quantum dots and molecules, to quantum Hall states and twisted bilayer graphene. In this Review, we provide an overview of electronic direct entropy measurement methods, discuss their theoretical background, compare their ranges of applicability and look into the directions for their future extensions and applications.
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Submitted 24 October, 2022; v1 submitted 12 June, 2022;
originally announced June 2022.
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Phase-Coherent Charge Transport through a Porphyrin Nanoribbon
Authors:
Zhixin Chen,
Jie-Ren Deng,
Songjun Hou,
Xinya Bian,
Jacob L. Swett,
Qingqing Wu,
Jonathan Baugh,
G. Andrew D. Briggs,
Jan A. Mol,
Colin J. Lambert,
Harry L. Anderson,
James O. Thomas
Abstract:
Quantum interference in nano-electronic devices could lead to reduced-energy computing and efficient thermoelectric energy harvesting. When devices are shrunk down to the molecular level it is still unclear to what extent electron transmission is phase coherent, as molecules usually act as scattering centres, without the possibility of showing particle-wave duality. Here we show electron transmiss…
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Quantum interference in nano-electronic devices could lead to reduced-energy computing and efficient thermoelectric energy harvesting. When devices are shrunk down to the molecular level it is still unclear to what extent electron transmission is phase coherent, as molecules usually act as scattering centres, without the possibility of showing particle-wave duality. Here we show electron transmission remains phase coherent in molecular porphyrin nanoribbons, synthesized with perfectly defined geometry, connected to graphene electrodes. The device acts as a graphene Fabry-Pérot interferometer, allowing direct probing of the transport mechanisms throughout several regimes, including the Kondo one. Electrostatic gating allows measurement of the molecular conductance in multiple molecular oxidation states, demonstrating a thousand-fold increase of the current by interference, and unravelling molecular and graphene transport pathways. These results demonstrate a platform for the use of interferometric effects in single-molecule junctions, opening up new avenues for studying quantum coherence in molecular electronic and spintronic devices.
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Submitted 5 September, 2022; v1 submitted 17 May, 2022;
originally announced May 2022.
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Map** Conductance and Switching Behavior of Graphene Devices In Situ
Authors:
Ondrej Dyck,
Jacob L. Swett,
Charalambos Evangeli,
Andrew R. Lupini,
Jan A. Mol,
Stephen Jesse
Abstract:
Graphene has been proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become non-trivial at nanometer and atomic scales, representing a significant challenge for device fabrication, characterization, and optimization at length scales where quantum effects emerge. Here, we p…
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Graphene has been proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become non-trivial at nanometer and atomic scales, representing a significant challenge for device fabrication, characterization, and optimization at length scales where quantum effects emerge. Here, we present proof of principle results at the crossroads between 2D nanoelectronic devices, e-beam-induced modulation, and imaging with secondary electron e-beam induced currents (SEEBIC). We introduce a device platform compatible with scanning transmission electron microscopy investigations. We then show how the SEEBIC imaging technique can be used to visualize conductance and connectivity in single layer graphene nanodevices, even while supported on a thicker substrate (conditions under which conventional imaging fails). Finally, we show that the SEEBIC imaging technique can detect subtle differences in charge transport through time in non-ohmic graphene nanoconstrictions indicating the potential to reveal dynamic electronic processes.
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Submitted 17 March, 2022;
originally announced March 2022.
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Charge-state dependent vibrational relaxation in a single-molecule junction
Authors:
Xinya Bian,
Zhixin Chen,
Jakub K. Sowa,
Charalambos Evangeli,
Bart Limburg,
Jacob L. Swett,
Jonathan Baugh,
G. Andrew D. Briggs,
Harry L. Anderson,
Jan A. Mol,
James O. Thomas
Abstract:
The interplay between nuclear and electronic degrees of freedom strongly influences molecular charge transport. Herein, we report on transport through a porphyrin dimer molecule, weakly coupled to graphene electrodes, that displays sequential tunneling within the Coulomb-blockade regime. The sequential transport is initiated by current-induced phonon absorption and proceeds by rapid sequential tra…
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The interplay between nuclear and electronic degrees of freedom strongly influences molecular charge transport. Herein, we report on transport through a porphyrin dimer molecule, weakly coupled to graphene electrodes, that displays sequential tunneling within the Coulomb-blockade regime. The sequential transport is initiated by current-induced phonon absorption and proceeds by rapid sequential transport via a non-equilibrium vibrational distribution. We demonstrate this is possible only when the vibrational dissipation is slow relative to sequential tunneling rates, and obtain a lower bound for the vibrational relaxation time of 8 ns, a value that is dependent on the molecular charge state.
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Submitted 25 February, 2022;
originally announced February 2022.
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Localised Solid-State Nanopore Fabrication via Controlled Breakdown using On-Chip Electrodes
Authors:
Jasper P. Fried,
Jacob L. Swett,
Binoy Paulose Nadappuram,
Aleksandra Fedosyuk,
Alex Gee,
Ondrej E. Dyck,
James R. Yates,
Aleksandar P. Ivanov,
Joshua B. Edel,
Jan A. Mol
Abstract:
Controlled breakdown has recently emerged as a highly accessible technique to fabricate solid-state nanopores. However, in its most common form, controlled breakdown creates a single nanopore at an arbitrary location in the membrane. Here, we introduce a new strategy whereby breakdown is performed by applying the electric field between an on-chip electrode and an electrolyte solution in contact wi…
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Controlled breakdown has recently emerged as a highly accessible technique to fabricate solid-state nanopores. However, in its most common form, controlled breakdown creates a single nanopore at an arbitrary location in the membrane. Here, we introduce a new strategy whereby breakdown is performed by applying the electric field between an on-chip electrode and an electrolyte solution in contact with the opposite side of the membrane. We demonstrate two advantages of this method. First, we can independently fabricate multiple nanopores at given positions in the membrane by localising the applied field to the electrode. Second, we show we can create nanopores that are self-aligned with complementary nanoelectrodes by applying voltages to the on-chip electrodes to locally heat the membrane during controlled breakdown. This new controlled breakdown method provides a path towards the affordable, rapid, and automatable fabrication of arrays of nanopores self-aligned with complementary on-chip nanostructures.
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Submitted 4 November, 2021;
originally announced November 2021.
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Controlling the entropy of a single-molecule junction
Authors:
Eugenia Pyurbeeva,
Chunwei Hsu,
David Vogel,
Christina Wegeberg,
Marcel Mayor,
Herre van der Zant,
Jan A. Mol,
Pascal Gehring
Abstract:
Single molecules are nanoscale thermodynamic systems with few degrees of freedom. Thus, the knowledge of their entropy can reveal the presence of microscopic electron transfer dynamics, that are difficult to observe otherwise. Here, we apply thermocurrent spectroscopy to directly measure the entropy of a single free radical molecule in a magnetic field. Our results allow us to uncover the presence…
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Single molecules are nanoscale thermodynamic systems with few degrees of freedom. Thus, the knowledge of their entropy can reveal the presence of microscopic electron transfer dynamics, that are difficult to observe otherwise. Here, we apply thermocurrent spectroscopy to directly measure the entropy of a single free radical molecule in a magnetic field. Our results allow us to uncover the presence of a singlet to triplet transition in one of the redox states of the molecule, not detected by conventional charge transport measurements. This highlights the power of thermoelectric measurements which can be used to determine the difference in configurational entropy between the redox states of a nanoscale system involved in conductance without any prior assumptions about its structure or microscopic dynamics.
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Submitted 14 September, 2021;
originally announced September 2021.
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Electric-field-driven conductance switching in encapsulated graphene nanogaps
Authors:
E. Pyurbeeva,
J. L. Swett,
Q. Ye,
O. W. Kennedy,
J. A. Mol
Abstract:
Feedback-controlled electric breakdown of graphene in air or vacuum is a well-established way of fabricating tunnel junctions, nanogaps, and quantum dots. We show that the method is equally applicable to encapsulated graphene constrictions fabricated using hydrogen silsesquioxane. The silica-like layer left by hydrogen silsesquioxane resist after electron-beam exposure remains intact after electri…
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Feedback-controlled electric breakdown of graphene in air or vacuum is a well-established way of fabricating tunnel junctions, nanogaps, and quantum dots. We show that the method is equally applicable to encapsulated graphene constrictions fabricated using hydrogen silsesquioxane. The silica-like layer left by hydrogen silsesquioxane resist after electron-beam exposure remains intact after electric breakdown of the graphene. We explore the conductance switching behavior that is common in graphene nanostructures fabricated via feedback-controlled breakdown, and show that it can be attributed to atomic-scale fluctuations of graphene below the encapsulating layer. Our findings open up new ways of fabricating encapsulated room-temperature single-electron nanodevices and shed light on the underlying physical mechanism of conductance switching in these graphene nanodevices.
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Submitted 28 June, 2021;
originally announced June 2021.
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Single-electron transport in a molecular Hubbard dimer
Authors:
James O. Thomas,
Jakub K. Sowa,
Bart Limburg,
Xinya Bian,
Charalambos Evangeli,
Jacob L. Swett,
Sumit Tewari,
Jonathan Baugh,
George C. Schatz,
G. Andrew D. Briggs,
Harry L. Anderson,
Jan A. Mol
Abstract:
Many-body electron interactions are at the heart of chemistry and solid-state physics. Understanding these interactions is crucial for the development of molecular-scale quantum and nanoelectronic devices. Here, we investigate single-electron tunneling through an edge-fused porphyrin oligomer and demonstrate that its transport behavior is well described by the Hubbard dimer model. This allows us t…
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Many-body electron interactions are at the heart of chemistry and solid-state physics. Understanding these interactions is crucial for the development of molecular-scale quantum and nanoelectronic devices. Here, we investigate single-electron tunneling through an edge-fused porphyrin oligomer and demonstrate that its transport behavior is well described by the Hubbard dimer model. This allows us to study the role of electron-electron interactions in the transport setting. In particular, we empirically determine the molecule's on-site and inter-site electron-electron repulsion energies, which are in good agreement with density functional calculations, and establish the molecular electronic structure within various charge states. The gate-dependent rectification behavior is used to further confirm the selection rules and state degeneracies resulting from the Hubbard model. We therefore demonstrate that current flow through the molecule is governed by a non-trivial set of vibrationally coupled electronic transitions between various many-body states, and experimentally confirm the importance of electron-electron interactions in single-molecule devices.
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Submitted 2 May, 2021;
originally announced May 2021.
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Understanding Electrical Conduction and Nanopore Formation During Controlled Breakdown
Authors:
Jasper P. Fried,
Jacob L. Swett,
Binoy Paulose Nadappuram,
Aleksandra Fedosyuk,
Pedro Miguel Sousa,
Dayrl P. Briggs,
Aleksandar P. Ivanov,
Joshua B. Edel,
Jan A. Mol,
James R. Yates
Abstract:
Controlled breakdown has recently emerged as a highly appealing technique to fabricate solid-state nanopores for a wide range of biosensing applications. This technique relies on applying an electric field of approximately 0.6-1 V/nm across the membrane to induce a current, and eventually, breakdown of the dielectric. However, a detailed description of how electrical conduction through the dielect…
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Controlled breakdown has recently emerged as a highly appealing technique to fabricate solid-state nanopores for a wide range of biosensing applications. This technique relies on applying an electric field of approximately 0.6-1 V/nm across the membrane to induce a current, and eventually, breakdown of the dielectric. However, a detailed description of how electrical conduction through the dielectric occurs during controlled breakdown has not yet been reported. Here, we study electrical conduction and nanopore formation in SiN$_x$ membranes during controlled breakdown. We show that depending on the membrane stoichiometry, electrical conduction is limited by either oxidation reactions that must occur at the membrane-electrolyte interface (Si-rich SiN$_x$), or electron transport across the dielectric (stoichiometric Si$_3$N$_4$). We provide several important implications resulting from understanding this process which will aid in further develo** controlled breakdown in the coming years, particularly for extending this technique to integrate nanopores with on-chip nanostructures.
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Submitted 30 March, 2021;
originally announced March 2021.
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Roadmap on quantum nanotechnologies
Authors:
Arne Laucht,
Frank Hohls,
Niels Ubbelohde,
M Fernando Gonzalez-Zalba,
David J Reilly,
Søren Stobbe,
Tim Schröder,
Pasquale Scarlino,
Jonne V Koski,
Andrew Dzurak,
Chih-Hwan Yang,
Jun Yoneda,
Ferdinand Kuemmeth,
Hendrik Bluhm,
Jarryd Pla,
Charles Hill,
Joe Salfi,
Akira Oiwa,
Juha T Muhonen,
Ewold Verhagen,
Matthew D LaHaye,
Hyun Ho Kim,
Adam W Tsen,
Dimitrie Culcer,
Attila Geresdi
, et al. (4 additional authors not shown)
Abstract:
Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing qu…
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Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon.
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Submitted 19 January, 2021;
originally announced January 2021.
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A thermodynamic approach to measuring entropy in a few-electron nanodevice
Authors:
E. Pyurbeeva,
J. A. Mol
Abstract:
The entropy of a system gives a powerful insight into its microscopic degrees of freedom, however standard experimental ways of measuring entropy through heat capacity are hard to apply in mesoscale and nanoscale systems, as they require the measurement of increasingly small amounts of heat. This problem calls for radically different measurement methods that do not suffer from decreasing accuracy…
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The entropy of a system gives a powerful insight into its microscopic degrees of freedom, however standard experimental ways of measuring entropy through heat capacity are hard to apply in mesoscale and nanoscale systems, as they require the measurement of increasingly small amounts of heat. This problem calls for radically different measurement methods that do not suffer from decreasing accuracy with the decreasing size of the system. For nanoelectric devices in the state of Coulomb blockade, with only two energetically accessible charge states, two purely electric, size-independent methods of measuring the entropy difference between the charge states have been proposed: through transport properties and charge balance measurements. We suggest a self-consistent thermodynamic framework for the treatment of entropy in Coulomb-blocked electric nanodevices which incorporates both existing entropy measurement methods, generalises them, and expands to systems with arbitrarily complex microstates corresponding to each charge state.
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Submitted 16 April, 2021; v1 submitted 13 August, 2020;
originally announced August 2020.
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The role of metallic leads and electronic degeneracies in thermoelectric power generation in quantum dots
Authors:
Achim Harzheim,
Jakub K. sowa,
Jacob L. Swett,
G. Andrew D. Briggs,
Jan A. Mol,
Pascal Gehring
Abstract:
The power factor of a thermoelectric device is a measure of the heat-to-energy conversion efficiency in nanoscopic devices. Yet, even as interest in low-dimensional thermoelectric materials has increased, experimental research on what influences the power factor in these systems is scarce. Here, we present a detailed thermoelectric study of graphene quantum dot devices. We show that spin-degenerac…
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The power factor of a thermoelectric device is a measure of the heat-to-energy conversion efficiency in nanoscopic devices. Yet, even as interest in low-dimensional thermoelectric materials has increased, experimental research on what influences the power factor in these systems is scarce. Here, we present a detailed thermoelectric study of graphene quantum dot devices. We show that spin-degeneracy of the quantum dot states has a significant impact on the zero-bias conductance of the device and leads to an increase of the power factor. Conversely, we demonstrate that non-ideal heat exchange within the leads can suppress the power factor near the charge degeneracy point and non-trivially influences its temperature dependence.
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Submitted 12 June, 2019;
originally announced June 2019.
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Understanding resonant charge transport through weakly coupled single-molecule junctions
Authors:
James O. Thomas,
Bart Limburg,
Jakub K. Sowa,
Kyle Willick,
Jonathan Baugh,
G. Andrew D. Briggs,
Erik M. Gauger,
Harry L. Anderson,
Jan A. Mol
Abstract:
Off-resonant charge transport through molecular junctions has been extensively studied since the advent of single-molecule electronics and it is now well understood within the framework of the non-interacting Landauer approach. Conversely, gaining a qualitative and quantitative understanding of the resonant transport regime has proven more elusive. Here, we study resonant charge transport through…
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Off-resonant charge transport through molecular junctions has been extensively studied since the advent of single-molecule electronics and it is now well understood within the framework of the non-interacting Landauer approach. Conversely, gaining a qualitative and quantitative understanding of the resonant transport regime has proven more elusive. Here, we study resonant charge transport through graphene-based zinc-porphyrin junctions. We experimentally demonstrate an inadequacy of the non-interacting Landauer theory as well as the conventional single-mode Franck-Condon model. Instead, we model the overall charge transport as a sequence of non-adiabatic electron transfers, the rates of which depend on both outer and inner-sphere vibrational interactions. We show that the transport properties of our molecular junctions are determined by a combination of electron-electron and electron-vibrational coupling, and are sensitive to the interactions with the wider local environment. Furthermore, we assess the importance of nuclear tunnelling and examine the suitability of semi-classical Marcus theory as a description of charge transport in molecular devices.
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Submitted 1 October, 2019; v1 submitted 18 December, 2018;
originally announced December 2018.
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Geometrically Enhanced Thermoelectric Effects in Graphene Nanoconstrictions
Authors:
Achim Harzheim,
Jean Spiece,
Charalambos Evangeli,
Edward McCann,
Vladimir Falko,
Yuewen Sheng,
Jamie H. Warner,
G. Andrew D. Briggs,
Jan A. Mol,
Pascal Gehring,
Oleg V. Kolosov
Abstract:
The influence of nanostructuring and quantum confinement on the thermoelectric properties of materials has been extensively studied. While this has made possible multiple breakthroughs in the achievable figure of merit, classical confinement, and its effect on the local Seebeck coefficient has mostly been neglected, as has the Peltier effect in general due to the complexity of measuring small temp…
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The influence of nanostructuring and quantum confinement on the thermoelectric properties of materials has been extensively studied. While this has made possible multiple breakthroughs in the achievable figure of merit, classical confinement, and its effect on the local Seebeck coefficient has mostly been neglected, as has the Peltier effect in general due to the complexity of measuring small temperature gradients locally. Here we report that reducing the width of a graphene channel to 100 nm changes the Seebeck coefficient by orders of magnitude. Using a scanning thermal microscope allows us to probe the local temperature of electrically contacted graphene two-terminal devices or to locally heat the sample. We show that constrictions in mono- and bilayer graphene facilitate a spatially correlated gradient in the Seebeck and Peltier coefficient, as evidenced by the pronounced thermovoltage $V_{th}$ and heating/cooling response $ΔT_{Peltier}$, respectively. This geometry dependent effect, which has not been reported previously in 2D materials, has important implications for measurements of patterned nanostructures in graphene and points to novel solutions for effective thermal management in electronic graphene devices or concepts for single material thermocouples.
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Submitted 29 November, 2018;
originally announced November 2018.
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Beyond Marcus theory and the Landauer-Büttiker approach in molecular junctions: A unified framework
Authors:
Jakub K. Sowa,
Jan A. Mol,
G. Andrew D. Briggs,
Erik M. Gauger
Abstract:
Charge transport through molecular junctions is often described either as a purely coherent or a purely classical phenomenon, and described using the Landauer-Büttiker formalism or Marcus theory, respectively. Using a generalised quantum master equation, we here derive an expression for current through a molecular junction modelled as a single electronic level coupled to a collection of thermalise…
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Charge transport through molecular junctions is often described either as a purely coherent or a purely classical phenomenon, and described using the Landauer-Büttiker formalism or Marcus theory, respectively. Using a generalised quantum master equation, we here derive an expression for current through a molecular junction modelled as a single electronic level coupled to a collection of thermalised vibrational modes. We demonstrate that the aforementioned theoretical approaches can be viewed as two limiting cases of this more general expression, and present a series of approximations of this result valid at higher temperatures. We find that Marcus theory is often insufficient in describing the molecular charge transport characteristics and gives rise to a number of artefacts, especially at lower temperatures. Alternative expressions, retaining its mathematical simplicity but rectifying those shortcomings, are suggested. In particular, we show how lifetime broadening can be consistently incorporated into Marcus theory, and we derive a low-temperature correction to the semi-classical Marcus hop** rates. Our results are applied to examples building on phenomenological as well as microscopically-motivated electron-vibrational coupling. We expect them to be particularly useful in experimental studies of charge transport through single-molecule junctions as well as self-assembled monolayers.
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Submitted 29 September, 2018; v1 submitted 23 July, 2018;
originally announced July 2018.
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Quantum Interference in Silicon 1D Quasi-Ballistic Junctionless Nanowire Field Effect Transistors
Authors:
Felix J. Schupp,
Muhammad M. Mirza,
Donald A. MacLaren,
G. Andrew D. Briggs,
Douglas J. Paul,
Jan A. Mol
Abstract:
We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated do** densities. First we extract the intrinsic gate capacitance of the device geometry from a device that shows Coulomb blockade at 13 mK with over 500 Coulomb peaks across a gate voltage range of 6 V…
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We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated do** densities. First we extract the intrinsic gate capacitance of the device geometry from a device that shows Coulomb blockade at 13 mK with over 500 Coulomb peaks across a gate voltage range of 6 V indicating the formation of a single island in the entire nanowire channel. In two other devices, doped Si:P $4\times10^{19}\,\text{cm}^{-3}$ and $2\times10^{20}\,\text{cm}^{-3}$, we observe quantum interference and use the extracted gate coupling to determine the dominant energy scale and the corresponding mean-free paths. For the higher doped device the analysis yields a mean free path of $4\pm2\,\text{nm}$, which is on the order of the average dopant spacing and suggests scattering on unactivated or activated dopants. For the device with an activated dopant density of $4\times10^{19}\,\text{cm}^{-3}$ the quantum interference effects suggest a mean free path of $10\pm2\,\text{nm}$, which is comparable to the nanowire width, and thus quasi-ballistic transport. A temperature dependent analysis of Universal Conductance Fluctuations suggests a coherence length above the nanowire length for temperatures below 1.9 K and decoherence from 1D electron-electron interactions for higher temperatures. The mobility is limited by scattering on impurities rather than the expected surface roughness scattering for nanowires with diameters larger or comparable to the Fermi wavelength. Our measurements therefore provide insight into the performance limitations from dominant scattering and dephasing mechanisms in technologically relevant silicon device geometries.
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Submitted 20 February, 2018;
originally announced February 2018.
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Spiro-Conjugated Molecular Junctions: between Jahn-Teller Distortion and Destructive Quantum Interference
Authors:
Jakub K. Sowa,
Jan A. Mol,
G. Andrew D. Briggs,
Erik M. Gauger
Abstract:
The quest for molecular structures exhibiting strong quantum interference effects in the transport setting has long been on the forefront of chemical research. Here, we establish theoretically that the unusual geometry of spiro-conjugated systems gives rise to complete destructive interference in the resonant-transport regime. This results in a current blockade of the type not present in meta-conn…
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The quest for molecular structures exhibiting strong quantum interference effects in the transport setting has long been on the forefront of chemical research. Here, we establish theoretically that the unusual geometry of spiro-conjugated systems gives rise to complete destructive interference in the resonant-transport regime. This results in a current blockade of the type not present in meta-connected benzene or similar molecular structures. We further show that these systems can undergo a transport-driven Jahn-Teller distortion which can lift the aforementioned destructive-interference effects. The overall transport characteristics is determined by the interplay between the two phenomena. Spiro-conjugated systems may therefore serve as a novel platform for investigations of quantum interference and vibronic effects in the charge transport setting. The potential to control quantum interference in these systems can also turn them into attractive components in designing functional molecular circuits.
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Submitted 19 February, 2018;
originally announced February 2018.
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Field-Effect Control of Graphene-Fullerene Thermoelectric Nanodevices
Authors:
Pascal Gehring,
Achim Harzheim,
Jean Spièce,
Yuewen Sheng,
Gregory Rogers,
Charalambos Evangeli,
Aadarsh Mishra,
Benjamin J. Robinson,
Kyriakos Porfyrakis,
Jamie H. Warner,
Oleg V. Kolosov,
G. Andrew D. Briggs,
Jan A. Mol
Abstract:
Although it was demonstrated that discrete molecular levels determine the sign and magnitude of the thermoelectric effect in single-molecule junctions, full electrostatic control of these levels has not been achieved to date. Here, we show that graphene nanogaps combined with gold microheaters serve as a testbed for studying single-molecule thermoelectricity. Reduced screening of the gate electric…
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Although it was demonstrated that discrete molecular levels determine the sign and magnitude of the thermoelectric effect in single-molecule junctions, full electrostatic control of these levels has not been achieved to date. Here, we show that graphene nanogaps combined with gold microheaters serve as a testbed for studying single-molecule thermoelectricity. Reduced screening of the gate electric field compared to conventional metal electrodes allows control of the position of the dominant transport orbital by hundreds of meV. We find that the power factor of graphene-fullerene junctions can be tuned over several orders of magnitude to a value close to the theoretical limit of an isolated Breit-Wigner resonance. Furthermore, our data suggest that the power factor of an isolated level is only given by the tunnel coupling to the leads and temperature. These results open up new avenues for exploring thermoelectricity and charge transport in individual molecules and highlight the importance of level alignment and coupling to the electrodes for optimum energy conversion in organic thermoelectric materials.
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Submitted 23 October, 2017;
originally announced October 2017.
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Environment-Assisted Quantum Transport through Single-Molecule Junctions
Authors:
Jakub K. Sowa,
Jan A. Mol,
G. Andrew D. Briggs,
Erik M. Gauger
Abstract:
Single-molecule electronics has been envisioned as the ultimate goal in the miniaturisation of electronic circuits. While the aim of incorporating single-molecule junctions into modern technology still proves elusive, recent developments in this field have begun to enable experimental investigation fundamental concepts within the area of chemical physics. One such phenomenon is the concept of Envi…
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Single-molecule electronics has been envisioned as the ultimate goal in the miniaturisation of electronic circuits. While the aim of incorporating single-molecule junctions into modern technology still proves elusive, recent developments in this field have begun to enable experimental investigation fundamental concepts within the area of chemical physics. One such phenomenon is the concept of Environment-Assisted Quantum Transport which has emerged from the investigation of exciton transport in photosynthetic complexes. Here, we study charge transport through a two-site molecular junction coupled to a vibrational environment. We demonstrate that vibrational interactions can also significantly enhance the current through specific molecular orbitals. Our study offers a clear pathway towards finding and identifying environment-assisted transport phenomena in charge transport settings.
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Submitted 19 October, 2017; v1 submitted 9 June, 2017;
originally announced June 2017.
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Scaling limits of graphene nanoelectrodes
Authors:
Syed Ghazi Sarwat,
Pascal Gehring,
Gerardo Rodriguez Hernandez,
Jamie H. Warner,
G. Andrew. D. Briggs,
Jan A. Mol,
Harish Bhaskaran
Abstract:
Graphene is an ideal material for fabricating atomically thin nanometre spaced electrodes. Recently, carbon-based nanoelectrodes have been employed to create single-molecule transistors and phase change memory devices. In spite of the significant recent interest in their use in a range of nanoscale devices from phase change memories to molecular electronics, the operating and scaling limits of the…
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Graphene is an ideal material for fabricating atomically thin nanometre spaced electrodes. Recently, carbon-based nanoelectrodes have been employed to create single-molecule transistors and phase change memory devices. In spite of the significant recent interest in their use in a range of nanoscale devices from phase change memories to molecular electronics, the operating and scaling limits of these electrodes are completely unknown. In this paper, we report on our observations of consistent voltage driven resistance switching in sub-5 nm graphene nanogaps. We find that we are able to reversibly cycle between a low and a high resistance state using feedback-controlled voltage ramps.We attribute this unexplained switching in the gap to the formation and breakdown of carbon filaments.By increasing the gap, we find that such intrinsic resistance switching of graphene nanogaps imposes a scaling limit of 10 nm (approx.) on the gap-size for devices with operating voltages of 1 to 2 volts.
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Submitted 18 February, 2017;
originally announced February 2017.
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A double quantum dot memristor
Authors:
Ying Li,
Gregory W. Holloway,
Simon C. Benjamin,
G. Andrew D. Briggs,
Jonathan Baugh,
Jan A. Mol
Abstract:
Memristive systems are generalisations of memristors, which are resistors with memory. In this paper, we present a quantum description of memristive systems. Using this model we propose and experimentally demonstrate a simple and practical scheme for realising memristive systems with quantum dots. The approach harnesses a phenomenon that is commonly seen as a bane of nanoelectronics, i.e. switchin…
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Memristive systems are generalisations of memristors, which are resistors with memory. In this paper, we present a quantum description of memristive systems. Using this model we propose and experimentally demonstrate a simple and practical scheme for realising memristive systems with quantum dots. The approach harnesses a phenomenon that is commonly seen as a bane of nanoelectronics, i.e. switching of a trapped charge in the vicinity of the device. We show that quantum-dot memristive systems have hysteresis current-voltage characteristics and quantum jump induced stochastic behaviour. Realising such a quantum memristor completes the menu of components for quantum circuit design.
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Submitted 8 September, 2017; v1 submitted 26 December, 2016;
originally announced December 2016.
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Quantum Interference in Graphene Nanoconstrictions
Authors:
Pascal Gehring,
Hatef Sadeghi,
Sara Sangtarash,
Chit Siong Lau,
Junjie Liu,
Arzhang Ardavan,
Jamie H. Warner,
Colin J. Lambert,
G. Andrew. D. Briggs,
Jan A. Mol
Abstract:
We report quantum interference effects in the electrical conductance of chemical vapor deposited graphene nanoconstrictions fabricated using feedback controlled electroburning. The observed multimode Fabry-Perot interferences can be attributed to reflections at potential steps inside the channel. Sharp antiresonance features with a Fano line shape are observed. Theoretical modeling reveals that th…
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We report quantum interference effects in the electrical conductance of chemical vapor deposited graphene nanoconstrictions fabricated using feedback controlled electroburning. The observed multimode Fabry-Perot interferences can be attributed to reflections at potential steps inside the channel. Sharp antiresonance features with a Fano line shape are observed. Theoretical modeling reveals that these Fano resonances are due to localized states inside the constriction, which couple to the delocalized states that also give rise to the Fabry-Perot interference patterns. This study provides new insight into the interplay between two fundamental forms of quantum interference in graphene nanoconstrictions.
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Submitted 7 September, 2016;
originally announced September 2016.
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Vibrational effects in charge transport through a molecular double quantum dot
Authors:
Jakub K. Sowa,
Jan A. Mol,
G. Andrew D. Briggs,
Erik M. Gauger
Abstract:
Recent progress in the field of molecular electronics has revealed the fundamental importance of the coupling between the electronic degrees of freedom and specific vibrational modes. Considering the examples of a molecular dimer and a carbon nanotube double quantum dot, we here theoretically investigate transport through a two-site system that is strongly coupled to a single vibrational mode. Usi…
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Recent progress in the field of molecular electronics has revealed the fundamental importance of the coupling between the electronic degrees of freedom and specific vibrational modes. Considering the examples of a molecular dimer and a carbon nanotube double quantum dot, we here theoretically investigate transport through a two-site system that is strongly coupled to a single vibrational mode. Using a quantum master equation approach, we demonstrate that, depending on the relative positions of the two dots, electron-phonon interactions can lead to negative differential conductance and suppression of the current through the system. We also discuss the experimental relevance of the presented results and possible implementations of the studied system.
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Submitted 17 February, 2017; v1 submitted 15 August, 2016;
originally announced August 2016.
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Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning
Authors:
Paweł Puczkarski,
Pascal Gehring,
Chit S. Lau,
Junjie Liu,
Arzhang Ardavan,
Jamie H. Warner,
G. Andrew D. Briggs,
Jan A. Mol
Abstract:
We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning betwe…
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We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-electron transistors or three terminal single molecule transistors with enhanced gate coupling.
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Submitted 22 September, 2015;
originally announced September 2015.
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Charge-insensitive single-atom spin-orbit qubit in silicon
Authors:
J. Salfi,
J. A. Mol,
Dimitrie Culcer,
S. Rogge
Abstract:
High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here we propose an acceptor-based spin-orbit qubit in silicon…
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High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here we propose an acceptor-based spin-orbit qubit in silicon offering long-range entanglement at a sweet spot where the qubit is protected from electrical noise. The qubit relies on quadrupolar SOC with the interface and gate potentials. As required for surface codes, $10^5$ electrically mediated single-qubit and $10^4$ dipole-dipole mediated two-qubit gates are possible in the predicted spin lifetime. Moreover, circuit quantum electrodynamics with single spins is feasible, including dispersive readout, cavity-mediated entanglement, and spin-photon entanglement. An industrially relevant silicon-based platform is employed.
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Submitted 5 January, 2017; v1 submitted 18 August, 2015;
originally announced August 2015.
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Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon
Authors:
J. Salfi,
J. A. Mol,
R. Rahman,
G. Klimeck,
M. Y. Simmons,
L. C. L. Hollenberg,
S. Rogge
Abstract:
In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose-Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin liquids are more difficult to simulate using cold atoms. To date the required single-site measurements…
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In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose-Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin liquids are more difficult to simulate using cold atoms. To date the required single-site measurements and cooling remain problematic, while only ensemble measurements have been achieved. Here we simulate a two-site Hubbard Hamiltonian at low effective temperatures with single-site resolution using subsurface dopants in silicon. We measure quasiparticle tunneling maps of spin-resolved states with atomic resolution, finding interference processes from which the entanglement entropy and Hubbard interactions are quantified. Entanglement, determined by spin and orbital degrees of freedom, increases with increasing covalent bond length. We find separation-tunable Hubbard interaction strengths that are suitable for simulating strongly correlated phenomena in larger arrays of dopants, establishing dopants as a platform for quantum simulation of the Hubbard model.
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Submitted 25 April, 2016; v1 submitted 22 July, 2015;
originally announced July 2015.
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Interface-induced heavy-hole/light-hole splitting of acceptors in silicon
Authors:
J. A. Mol,
J. Salfi,
R. Rahman,
Y. Hsueh,
J. A. Miwa,
G. Klimeck,
M. Y. Simmons,
S. Rogge
Abstract:
The energy spectrum of spin-orbit coupled states of individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy (STS) at cryogenic temperatures. The spatially resolved tunnel spectra show two resonances which we ascribe to the heavy- and light-hole Kramers doublets. This type of broken degeneracy has recently been argued to be advantageous…
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The energy spectrum of spin-orbit coupled states of individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy (STS) at cryogenic temperatures. The spatially resolved tunnel spectra show two resonances which we ascribe to the heavy- and light-hole Kramers doublets. This type of broken degeneracy has recently been argued to be advantageous for the lifetime of acceptor-based qubits [Phys. Rev. B 88 064308 (2013)]. The depth dependent energy splitting between the heavy- and light-hole Kramers doublets is consistent with tight binding calculations, and is in excess of 1 meV for all acceptors within the experimentally accessible depth range (< 2 nm from the surface). These results will aid the development of tunable acceptor-based qubits in silicon with long coherence times and the possibility for electrical manipulation.
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Submitted 22 January, 2015;
originally announced January 2015.
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Spatially Resolving Valley Quantum Interference of a Donor in Silicon
Authors:
J. Salfi,
J. A. Mol,
R. Rahman,
G. Klimeck,
M. Y. Simmons,
L. C. L. Hollenberg,
S. Rogge
Abstract:
Electron and nuclear spins of donor ensembles in isotopically pure silicon experience a vacuum-like environment, giving them extraordinary coherence. However, in contrast to a real vacuum, electrons in silicon occupy quantum superpositions of valleys in momentum space. Addressable single-qubit and two-qubit operations in silicon require that qubits are placed near interfaces, modifying the valley…
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Electron and nuclear spins of donor ensembles in isotopically pure silicon experience a vacuum-like environment, giving them extraordinary coherence. However, in contrast to a real vacuum, electrons in silicon occupy quantum superpositions of valleys in momentum space. Addressable single-qubit and two-qubit operations in silicon require that qubits are placed near interfaces, modifying the valley degrees of freedom associated with these quantum superpositions and strongly influencing qubit relaxation and exchange processes. Yet to date, spectroscopic measurements only indirectly probe wavefunctions, preventing direct experimental access to valley population, donor position, and environment. Here we directly probe the probability density of single quantum states of individual subsurface donors, in real space and reciprocal space, using scanning tunneling spectroscopy. We directly observe quantum mechanical valley interference patterns associated with linear superpositions of valleys in the donor ground state. The valley population is found to be within $5 \%$ of a bulk donor when $2.85\pm0.45$ nm from the interface, indicating that valley perturbation-induced enhancement of spin relaxation will be negligible for depths $>3$ nm. The observed valley interference will render two-qubit exchange gates sensitive to atomic-scale variations in positions of subsurface donors. Moreover, these results will also be of interest to emerging schemes proposing to encode information directly in valley polarization.
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Submitted 22 July, 2015; v1 submitted 18 March, 2014;
originally announced March 2014.
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Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants
Authors:
J. A. Mol,
J. Salfi,
J. A. Miwa,
M. Y. Simmons,
S. Rogge
Abstract:
Understanding the electronic properties of dopants near an interface is a critical challenge for nano-scale devices. We have determined the effect of dielectric mismatch and quantum confinement on the ionization energy of individual acceptors beneath a hydrogen passivated silicon (100) surface. Whilst dielectric mismatch between the vacuum and the silicon at the interface results in an image charg…
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Understanding the electronic properties of dopants near an interface is a critical challenge for nano-scale devices. We have determined the effect of dielectric mismatch and quantum confinement on the ionization energy of individual acceptors beneath a hydrogen passivated silicon (100) surface. Whilst dielectric mismatch between the vacuum and the silicon at the interface results in an image charge which enhances the binding energy of sub-surface acceptors, quantum confinement is shown to reduce the binding energy. Using scanning tunneling spectroscopy we measure resonant transport through the localized states of individual acceptors. Thermal broadening of the conductance peaks provides a direct measure for the absolute energy scale. Our data unambiguously demonstrates that these two independent effects compete with the result that the ionization energy is less than 5 meV lower than the bulk value for acceptors less than a Bohr radius from the interface.
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Submitted 1 July, 2013; v1 submitted 11 March, 2013;
originally announced March 2013.
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Comparative study of tight-binding and ab initio electronic structure calculations focused on magnetic anisotropy in ordered CoPt alloy
Authors:
J. Zemen,
J. Mašek,
J. Kučera,
J. A. Mol,
P. Motloch,
T. Jungwirth
Abstract:
An empirical multiorbital (spd) tight binding (TB) model including magnetism and spin-orbit coupling is applied to calculations of magnetic anisotropy energy (MAE) in CoPt L1_0 structure. A realistic Slater-Koster parametrisation for single-element transition metals is adapted for the ordered binary alloy. Spin magnetic moment and density of states are calculated using a full-potential linearized…
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An empirical multiorbital (spd) tight binding (TB) model including magnetism and spin-orbit coupling is applied to calculations of magnetic anisotropy energy (MAE) in CoPt L1_0 structure. A realistic Slater-Koster parametrisation for single-element transition metals is adapted for the ordered binary alloy. Spin magnetic moment and density of states are calculated using a full-potential linearized augmented plane-wave (LAPW) ab initio method and our TB code with different variants of the interatomic parameters. Detailed mutual comparison of this data allows for determination of a subset of the compound TB parameters tuning of which improves the agreement of the TB and LAPW results. MAE calculated as a function of band filling using the refined parameters is in broad agreement with ab initio data for all valence states and in quantitative agreement with ab initio and experimental data for the natural band filling. Our work provides a practical basis for further studies of relativistic magnetotransport anisotropies by means of local Green's function formalism which is directly compatible with our TB approach.
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Submitted 22 January, 2013;
originally announced January 2013.
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Balanced ternary addition using a gated silicon nanowire
Authors:
J. A. Mol,
J. van der Heijden,
J. Verduijn,
M. Klein,
F. Remacle,
S. Rogge
Abstract:
We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electron transistor results in a robust three-valued output as a function of the potential of the SET island. Map** logical, ternary inputs to the three gates controlling the potential of the SET island allows us to perform c…
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We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electron transistor results in a robust three-valued output as a function of the potential of the SET island. Map** logical, ternary inputs to the three gates controlling the potential of the SET island allows us to perform complex, inherently ternary operations, on a single transistor.
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Submitted 29 August, 2011;
originally announced August 2011.
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Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
Authors:
B. C. Johnson,
G. C. Tettamanzi,
A. D. C. Alves,
S. Thompson,
C. Yang,
J. Verduijn,
J. A. Mol,
R. Wacquez,
M. Vinet,
M. Sanquer,
S. Rogge,
D. N. Jamieson
Abstract:
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic do** is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stop** proc…
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We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic do** is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stop** processes that induce drain current modulation are examined. We employ 500~keV He ions, in which electronic stop** is dominant, leading to discrete increases in drain current and 14~keV P dopants for which nuclear stop** is dominant leading to discrete decreases in drain current.
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Submitted 29 July, 2010;
originally announced July 2010.
