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Fast and Efficient Type-II Phototransistors Integrated on Silicon
Authors:
Lining Liu,
Simone Bianconi,
Skylar Wheaton,
Nathaniel Coirier,
Farah Fahim,
Hooman Mohseni
Abstract:
Increasing the efficiency and reducing the footprint of on-chip photodetectors enables dense optical interconnects for emerging computational and sensing applications. Avalanche photodetectors (APD) are currently the dominating on-chip photodetectors. However, the physics of avalanche multiplication leads to low energy efficiencies and prevents device operation at a high gain, due to a high excess…
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Increasing the efficiency and reducing the footprint of on-chip photodetectors enables dense optical interconnects for emerging computational and sensing applications. Avalanche photodetectors (APD) are currently the dominating on-chip photodetectors. However, the physics of avalanche multiplication leads to low energy efficiencies and prevents device operation at a high gain, due to a high excess noise, resulting in the need for electrical amplifiers. These properties significantly increase power consumption and footprint of current optical receivers. In contrast, heterojunction phototransistors (HPT) exhibit high efficiency and very small excess noise at high gain. However, HPT's gain-bandwidth product (GBP) is currently inferior to that of APDs at low optical powers. Here, we demonstrate that the type-II energy band alignment in an antimony-based HPT results in a significantly smaller junction capacitance and higher GBP at low optical powers. We used a CMOS-compatible heterogeneous integration method to create compact optical receivers on silicon with an energy efficiency that is about one order of magnitude higher than that of the best reported integrated APDs on silicon at a similar GBP of 270 GHz. Bitrate measurements show data rate spatial density above 800 Tbps per mm2, and an energy-per-bit consumption of only 6 fJ/bit at 3 Gbps. These unique features suggest new opportunities for creating highly efficient and compact on-chip optical receivers based on devices with type-II band alignment.
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Submitted 7 November, 2023;
originally announced November 2023.
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Android Botnet Detection using Convolutional Neural Networks
Authors:
Sina Hojjatinia,
Sajad Hamzenejadi,
Hadis Mohseni
Abstract:
Today, Android devices are able to provide various services. They support applications for different purposes such as entertainment, business, health, education, and banking services. Because of the functionality and popularity of Android devices as well as the open-source policy of Android OS, they have become a suitable target for attackers. Android Botnet is one of the most dangerous malwares b…
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Today, Android devices are able to provide various services. They support applications for different purposes such as entertainment, business, health, education, and banking services. Because of the functionality and popularity of Android devices as well as the open-source policy of Android OS, they have become a suitable target for attackers. Android Botnet is one of the most dangerous malwares because an attacker called Botmaster can control that remotely to perform destructive attacks. A number of researchers have used different well-known Machine Learning (ML) methods to recognize Android Botnets from benign applications. However, these conventional methods are not able to detect new sophisticated Android Botnets. In this paper, we propose a novel method based on Android permissions and Convolutional Neural Networks (CNNs) to classify Botnets and benign Android applications. Being the first developed method that uses CNNs for this aim, we also proposed a novel method to represent each application as an image which is constructed based on the co-occurrence of used permissions in that application. The proposed CNN is a binary classifier that is trained using these images. Evaluating the proposed method on 5450 Android applications consist of Botnet and benign samples, the obtained results show the accuracy of 97.2% and recall of 96% which is a promising result just using Android permissions.
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Submitted 27 November, 2019;
originally announced November 2019.
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Giant Conductivity Modulation of Aluminum Oxide using Focused Ion Beam
Authors:
Simone Bianconi,
Min-Su Park,
Hooman Mohseni
Abstract:
Precise control of the conductivity of semiconductors through do** has enabled the creation of advanced electronic devices, similarly, the ability to control the conductivity in oxides can enable novel advanced electronic and optoelectronic functionalities. While this was successfully shown for moderately insulating oxides, such as In2O3, a reliable method for increasing the conductivity of high…
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Precise control of the conductivity of semiconductors through do** has enabled the creation of advanced electronic devices, similarly, the ability to control the conductivity in oxides can enable novel advanced electronic and optoelectronic functionalities. While this was successfully shown for moderately insulating oxides, such as In2O3, a reliable method for increasing the conductivity of highly insulating, wide bandgap dielectrics, such as aluminum oxide (Al2O3), has not been reported yet. Al2O3 is a material of significant technological interest, permeating diverse fields of application, thanks to its exceptional mechanical strength and dielectric properties. Here we present a versatile method for precisely changing the conductivity of Al2O3 . Our approach greatly exceeds the magnitude of the best previously reported change of conductivity in an oxide. Our method uses focused ion beam to produce conductive zones with nanoscale resolution within the insulating Al2O3 matrix. We investigated the source of conductivity modulation and identified trap-assisted conduction in the ion damage-induced defects as the main charge transport mechanism. Temperature-dependency of the conductivity and optical characterization of the patterned areas offer further insight into the nature of the conduction mechanism. We also show that the process is extremely reproducible and robust against moderate annealing temperatures and chemical environment. The record conductivity modulation, combined with the nanoscale patterning precision allows the creation of conductive zones within a highly insulating, mechanically hard, chemically inert, and bio-compatible matrix, which could find broad applications in electronics, optoelectronics, and medical implants
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Submitted 18 February, 2019;
originally announced February 2019.
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Space-Time Scattering Network for Electromagnetic Inverse Design and Tomography
Authors:
Travis Hamilton,
Hooman Mohseni
Abstract:
Maxwell equations generally explain the propagation of light through an arbitrary medium by using wave mechanics. However, scientific evidence since Newton suggest a discrete interpretation of light more generally explains its nature. This interpretation lends itself well to the discrete form of computer simulation. While current simulations attempt to discretize Maxwell equations, we present an i…
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Maxwell equations generally explain the propagation of light through an arbitrary medium by using wave mechanics. However, scientific evidence since Newton suggest a discrete interpretation of light more generally explains its nature. This interpretation lends itself well to the discrete form of computer simulation. While current simulations attempt to discretize Maxwell equations, we present an inherently discrete physical model of light propagation that naturally forms a causal space-time scattering network (STSN). STSN has the topology of neural networks, inverse design and tomography based on STSN can be readily implemented in a variety of software and hardware that are optimized for deep learning. Also, STSN inherently includes the physics of light propagation, and hence the number of unknown weights in STSN is at a minimum. We show this property leads to orders of magnitude smaller number of unknown weights, and a much faster convergence, compared with inverse design methods using conventional neural networks. In addition, the intrinsic presence of space-time fabric in STSN allows time-dependent inverse design and tomography. We show examples of the fast convergence of STSN in predicting time-dependent index profiles while avoiding approximations typically used.
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Submitted 17 November, 2018;
originally announced November 2018.
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Sensitivity Limit of Nanoscale Phototransistors
Authors:
Mohsen Rezaei,
Min Su Park,
Chee Leong Tan,
Hooman Mohseni
Abstract:
In this paper the optical gain mechanism in phototransistor detectors (PTDs) is explored in low light conditions. An analytical formula is derived for the physical limit on the minimum number of detectable photons for the PTD. This formulation shows that the sensitivity of the PTD, regardless of its material composition, is related to the square root of the normalized total capacitance at the base…
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In this paper the optical gain mechanism in phototransistor detectors (PTDs) is explored in low light conditions. An analytical formula is derived for the physical limit on the minimum number of detectable photons for the PTD. This formulation shows that the sensitivity of the PTD, regardless of its material composition, is related to the square root of the normalized total capacitance at the base layer. Since the base total capacitance is directly proportional to the size of the PTD, the formulation shows the scaling effect on the sensitivity of the PTD. We used the extracted formula to study the sensitivity limit of a typical InGaAs/InP heterojunction PTD. Modeling predicts that a PTD with a nanoscale electronic area can reach to a single photon noise equivalent power even at room temperature. The proposed model can also be used to explore the sensitivity and speed of the nanowire-based photodetectors. To the best of our knowledge, this is the first comprehensive study on the sensitivity of the PTD for low light detection.
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Submitted 19 April, 2017;
originally announced April 2017.
