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Phase Binarization in Mutually Synchronized Bias Field-free Spin Hall Nano-oscillators for Reservoir Computing
Authors:
Sourabh Manna,
Rohit Medwal,
John Rex Mohan,
Yasuhiro Fukuma,
Rajdeep Singh Rawat
Abstract:
Mutually coupled spin Hall nano-oscillators (SHNO) can exhibit binarized phase state, offering pathways to realize Ising machines and efficient neuromorphic hardware. Conventionally, phase binarization is achieved in coupled SHNOs via injecting an external microwave at twice of the oscillator frequency in presence of a biasing magnetic field. However, this technology poses potential challenges of…
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Mutually coupled spin Hall nano-oscillators (SHNO) can exhibit binarized phase state, offering pathways to realize Ising machines and efficient neuromorphic hardware. Conventionally, phase binarization is achieved in coupled SHNOs via injecting an external microwave at twice of the oscillator frequency in presence of a biasing magnetic field. However, this technology poses potential challenges of higher energy consumption and complex circuit design. Moreover, fabrication-induced mismatch in SHNO dimensions may hinder mutual synchronization. Addressing these challenges, we demonstrate purely DC current-driven mutual synchronization and phase binarization of two non-identical nanoconstriction SHNOs without biasing magnetic field and microwave injection. We thoroughly investigate these phenomena and underlying mechanisms using micromagnetic simulation. We further demonstrate the bias field-free synchronized SHNO pair efficiently performing a reservoir computing benchmark learning task: sin and square wave classification, utilizing current tunable phase binarization. Our results showcase promising magnetization dynamics of coupled bias field-free SHNOs for future computing applications.
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Submitted 5 April, 2024;
originally announced April 2024.
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Direct visualization of local magnetic domain dynamics in a 2D Van der Walls material/ferromagnet interface
Authors:
Joseph Vimal Vas,
Rohit Medwal,
Sourabh Manna,
Mayank Mishra,
Aaron Muller,
John Rex Mohan,
Yasuhiro Fukuma,
Martial Duchamp,
Rajdeep Singh Rawat
Abstract:
Exploring new strategies for controlling the magnetic domain propagation is the key to realize ultrafast, high-density domain wall-based memory and logic devices for next generation computing. These strategies include strain modulation in multiferroic devices, geometric confinement and area-selective pinning of domain wall. 2D Van der Waals materials introduce localized modifications to the interf…
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Exploring new strategies for controlling the magnetic domain propagation is the key to realize ultrafast, high-density domain wall-based memory and logic devices for next generation computing. These strategies include strain modulation in multiferroic devices, geometric confinement and area-selective pinning of domain wall. 2D Van der Waals materials introduce localized modifications to the interfacial magnetic order, enabling control over the propagation of magnetic domains. Here, using Lorentz-Transmission Electron Microscopy (L-TEM) along with the Modified Transport of Intensity equations (MTIE), we demonstrate controlled domain expansion with in-situ magnetic field in a ferromagnet (Permalloy, NiFe) interfacing with a 2D Van der Waals material Graphene (Gr). The Gr/NiFe interface exhibits distinctive domain expansion rate with magnetic field selectively near the interface which is further analyzed using micromagnetic simulations. Our findings are crucial for comprehending direct visualization of interface controlled magnetic domain expansion, offering insights for develo** future domain wall-based technology.
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Submitted 3 April, 2024;
originally announced April 2024.
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Interfacial spintronic THz emission
Authors:
Piyush Agarwal,
Rohit Medwal,
Keynesh Dongol,
John Rex Mohan,
Yingshu Yang,
Hironori Asada,
Yasuhiro Fukuma,
Ranjan Singh
Abstract:
The broken inversion symmetry at the ferromagnet (FM)/heavy-metal (HM) interface leads to spin-dependent degeneracy of the energy band, forming spin-polarized surface states. As a result, the interface serves as an effective medium for converting spin accumulation into two-dimensional charge current through the inverse Rashba-Edelstein effect. Exploring and assessing this spin-to-charge conversion…
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The broken inversion symmetry at the ferromagnet (FM)/heavy-metal (HM) interface leads to spin-dependent degeneracy of the energy band, forming spin-polarized surface states. As a result, the interface serves as an effective medium for converting spin accumulation into two-dimensional charge current through the inverse Rashba-Edelstein effect. Exploring and assessing this spin-to-charge conversion (SCC) phenomenon at the FM/HM interface could offer a promising avenue to surpass the presumed limits of SCC in bulk HM layers. We utilize spintronic heterostructures as a platform to measure the spin-to-charge conversion (SCC) experienced by photoexcited spin currents. These heterostructures emit terahertz electric field when illuminated by femtosecond laser pulses, enabling us to quantitatively assess the ultrafast SCC process. Our results demonstrate a robust interfacial spin-to-charge conversion (iSCC) within a synthetic antiferromagnetic heterostructure, specifically for the NiFe/Ru/NiFe configuration, by isolating the SCC contribution originating from the interface itself, separate from the bulk heavy-metal (HM) region. Moreover, the iSCC at the NiFe/Ru interface is discovered to be approximately 27% of the strength observed in the highest spin-Hall conducting heavy-metal, Pt. Our results thus highlight the significance of interfacial engineering as a promising pathway for achieving efficient ultrafast spintronic devices.
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Submitted 11 August, 2023;
originally announced August 2023.
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Unconventional spin polarization at Argon ion milled SrTiO3 Interfaces
Authors:
Amrendra Kumar,
Utkarsh Shashank,
Suman Kumar Maharana,
John Rex Mohan,
Surbhi Gupta,
Hironori Asada,
Yasuhiro Fukuma,
Rohit Medwal
Abstract:
Interfacial two-dimensional electron gas (2DEG) formed at the perovskite-type oxide, such as SrTiO3, has attracted significant attention due to its properties of ferromagnetism, superconductivity, and its potential application in oxide-based low-power consumption electronics. Recent studies have investigated spin-to-charge conversion at the STO interface with different materials, which could affec…
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Interfacial two-dimensional electron gas (2DEG) formed at the perovskite-type oxide, such as SrTiO3, has attracted significant attention due to its properties of ferromagnetism, superconductivity, and its potential application in oxide-based low-power consumption electronics. Recent studies have investigated spin-to-charge conversion at the STO interface with different materials, which could affect the efficiency of this 2DEG interface. In this report, we presented an Ar^+ ion milling method to create a 2DEG at STO directly by inducing oxygen vacancies. To quantify the spin-to-charge conversion of this interface, we measured the angular-dependent spin-torque ferromagnetic resonance (ST-FMR) spectra, revealing an unconventional spin polarization at the interface of Argon ion-milled STO and NiFe. Furthermore, a micromagnetic simulation for angular-dependent spin-torque ferromagnetic resonance (ST-FMR) has been performed, confirming the large unconventional spin polarization at the interface.
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Submitted 23 July, 2023;
originally announced July 2023.
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Dense plasma irradiated platinum with improved spin Hall effect
Authors:
Sachin Kumar,
Sourabh Manna,
John Rex Mohan,
Utkarsh Shashank,
Jospeh Vimal,
Mayank Mishra,
Surbhi Gupta,
Hironori Asada,
Yasuhiro Fukuma,
Rajdeep Singh Rawat,
Rohit Medwal
Abstract:
The impurity incorporation in host high-spin orbit coupling materials like platinum has shown improved charge-to-spin conversion by modifying the up-spin and down-spin electron trajectories by bending or skewing them in opposite directions. This enables efficient generation, manipulation, and transport of spin currents. In this study, we irradiate the platinum with non-focus dense plasma to incorp…
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The impurity incorporation in host high-spin orbit coupling materials like platinum has shown improved charge-to-spin conversion by modifying the up-spin and down-spin electron trajectories by bending or skewing them in opposite directions. This enables efficient generation, manipulation, and transport of spin currents. In this study, we irradiate the platinum with non-focus dense plasma to incorporate the oxygen ion species. We systematically analyze the spin Hall angle of the oxygen plasma irradiated Pt films using spin torque ferromagnetic resonance. Our results demonstrate a 2.4 times enhancement in the spin Hall effect after plasma treatment of Pt as compared to pristine Pt. This improvement is attributed to the introduction of disorder and defects in the Pt lattice, which enhances the spin-orbit coupling and leads to more efficient charge-to-spin conversion without breaking the spin-orbit torque symmetries. Our findings offer a new method of dense plasma-based modification of material for the development of advanced spintronic devices based on Pt and other heavy metals.
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Submitted 22 July, 2023;
originally announced July 2023.
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Active Magnetoelectric Control of Terahertz Spin Current
Authors:
Avinash Chaurasiya,
Ziqi Li,
Rohit Medwal,
Surbhi Gupta,
John Rex Mohan,
Yasuhiro Fukuma,
Hironori Asada,
Elbert E. M. Chia,
Rajdeep Singh Rawat
Abstract:
Electrical control of photogenerated THz spin current pulses from a spintronic emitter has been at the forefront for the development of scalable, cost-efficient, wideband opto-spintronics devices. Artificially combined ferroelectric and ferromagnet heterostructure provides the potential avenue to control the spin dynamics efficiently utilizing the magnetoelectric coupling. The demonstration of the…
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Electrical control of photogenerated THz spin current pulses from a spintronic emitter has been at the forefront for the development of scalable, cost-efficient, wideband opto-spintronics devices. Artificially combined ferroelectric and ferromagnet heterostructure provides the potential avenue to control the spin dynamics efficiently utilizing the magnetoelectric coupling. The demonstration of the electric field control of spin dynamics has so far been limited up to gigahertz frequencies. Here, we demonstrate the electric field mediated piezoelectric strain control of photogenerated THz spin current pulse from a multiferroic spintronic emitter. The phase reversal of the THz spin current pulse is obtained from the combined effect of piezoelectric strain and a small constant magnetic field applied opposite to the initial magnetization of the ferromagnet. The piezoelectric strain-controlled phase switching of THz spin current thus opens a door to develop efficient strain engineered scalable on-chip THz spintronics devices.
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Submitted 27 November, 2021;
originally announced November 2021.