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Micromagnetic instabilities in spin-transfer switching of perpendicular magnetic tunnel junctions
Authors:
Nahuel Statuto,
Jamileh Beik Mohammadi,
Andrew D. Kent
Abstract:
Micromagnetic instabilities and non-uniform magnetization states play a significant role in spin transfer induced switching of nanometer scale magnetic elements. Here we model domain wall mediated switching dynamics in perpendicularly magnetized magnetic tunnel junction nanopillars. We show that domain wall surface tension always leads to magnetization oscillations and instabilities associated wit…
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Micromagnetic instabilities and non-uniform magnetization states play a significant role in spin transfer induced switching of nanometer scale magnetic elements. Here we model domain wall mediated switching dynamics in perpendicularly magnetized magnetic tunnel junction nanopillars. We show that domain wall surface tension always leads to magnetization oscillations and instabilities associated with the disk shape of the junction. A collective coordinate model is developed that captures aspects of these instabilities and illustrates their physical origin. Model results are compared to those of micromagnetic simulations. The switching dynamics is found to be very sensitive to the domain wall position and phase, which characterizes the angle of the magnetization in the disk plane. This sensitivity is reduced in the presence of spin torques and the spin current needed to displace a domain wall can be far less than the threshold current for switching from a uniformly magnetized state. A prediction of this model is conductance oscillations of increasing frequency during the switching process.
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Submitted 9 September, 2020;
originally announced September 2020.
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Enhancement in Thermally Generated Spin Voltage at Pd/NiFe$_2$O$_4$ Interfaces by the Growth on Lattice-Matched Substrates
Authors:
A. Rastogi,
Z. Li,
A. V. Singh,
S. Regmi,
T. Peters,
P. Bougiatioti,
D. Carsten né Meier,
J. B. Mohammadi,
B. Khodadadi,
T. Mewes,
R. Mishra,
J. Gazquez,
A. Y. Borisevich,
Z. Galazka,
R. Uecker,
G. Reiss,
T. Kuschel,
A. Gupta
Abstract:
Efficient spin injection from epitaxial ferrimagnetic NiFe$_2$O$_4$ thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. The NiFe$_2$O$_4$ films (60 nm to 1 $μ$m) are grown by pulsed laser deposition on isostructural spinel MgAl$_2$O$_4$, MgGa$_2$O$_4$, and CoGa$_2$O$_4$ substrates with lattice mismatch varying between 3.2% and 0.2%. For the…
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Efficient spin injection from epitaxial ferrimagnetic NiFe$_2$O$_4$ thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. The NiFe$_2$O$_4$ films (60 nm to 1 $μ$m) are grown by pulsed laser deposition on isostructural spinel MgAl$_2$O$_4$, MgGa$_2$O$_4$, and CoGa$_2$O$_4$ substrates with lattice mismatch varying between 3.2% and 0.2%. For the thinner films ($\leq$ 330 nm), an increase in the spin Seebeck voltage is observed with decreasing lattice mismatch, which correlates well with a decrease in the Gilbert dam** parameter as determined from ferromagnetic resonance measurements. High resolution transmission electron microscopy studies indicate substantial decrease of antiphase boundary and interface defects that cause strain-relaxation, i.e., misfit dislocations, in the films with decreasing lattice mismatch. This highlights the importance of reducing structural defects in spinel ferrites for efficient spin injection. It is further shown that angle-dependent spin Seebeck effect measurements provide a qualitative method to probe for in-plane magnetic anisotropies present in the films.
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Submitted 1 June, 2020;
originally announced June 2020.
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Spin-torque switching mechanisms of perpendicular magnetic tunnel junctions nanopillars
Authors:
Jamileh Beik Mohammadi,
Andrew D. Kent
Abstract:
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we present a micromagnetic study of spin-torque switching in a disk-shaped element as a function of the free layer's exchange constant and disk diameter. The switchin…
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Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we present a micromagnetic study of spin-torque switching in a disk-shaped element as a function of the free layer's exchange constant and disk diameter. The switching is shown to generally occur by 1) growth of the magnetization precession amplitude in the element center; 2) an instability in which the reversing region moves to the disk edge, forming a magnetic domain wall; and 3) the motion of the domain wall across the element. For large diameters and small exchange, step 1 leads to a droplet with a fully reversed core that experiences a drift instability (step 2). While in the opposite case (small diameters and large exchange), the central region of the disk is not fully reversed before step 2 occurs. The origin of the micromagnetic structure is shown to be the disk's non-uniform demagnetization field. Faster, more coherence and energy efficient switching occur with larger exchange and smaller disk diameters, showing routes to increase device performance.
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Submitted 30 March, 2020;
originally announced March 2020.
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Spin transport in an insulating ferrimagnetic-antiferromagnetic-ferrimagnetic trilayer as a function of temperature
Authors:
Yizhang Chen,
Egecan Cogulu,
Debangsu Roy,
**jun Ding,
Jamileh Beik Mohammadi,
Paul G. Kotula,
Nancy A. Missert,
Mingzhong Wu,
Andrew D. Kent
Abstract:
We present a study of the transport properties of thermally generated spin currents in an insulating ferrimagnetic-antiferromagnetic-ferrimagnetic trilayer over a wide range of temperature. Spin currents generated by the spin Seebeck effect (SSE) in a yttrium iron garnet (YIG) YIG/NiO/YIG trilayer on a gadolinium gallium garnet (GGG) substrate were detected using the inverse spin Hall effect in Pt…
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We present a study of the transport properties of thermally generated spin currents in an insulating ferrimagnetic-antiferromagnetic-ferrimagnetic trilayer over a wide range of temperature. Spin currents generated by the spin Seebeck effect (SSE) in a yttrium iron garnet (YIG) YIG/NiO/YIG trilayer on a gadolinium gallium garnet (GGG) substrate were detected using the inverse spin Hall effect in Pt. By studying samples with different NiO thicknesses, the NiO spin diffusion length was determined to be 4.2 nm at room temperature. Interestingly, below 30 K, the inverse spin Hall signals are associated with the GGG substrate. The field dependence of the signal follows a Brillouin function for a S=7/2 spin ($\mathrm{Gd^{3+}}$) at low temperature. Sharp changes in the SSE signal at low fields are due to switching of the YIG magnetization. A broad peak in the SSE response was observed around 100 K, which we associate with an increase in the spin-diffusion length in YIG. These observations are important in understanding the generation and transport properties of spin currents through magnetic insulators and the role of a paramagnetic substrate in spin current generation.
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Submitted 28 June, 2019;
originally announced June 2019.
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Reduced Exchange Interactions in Magnetic Tunnel Junction Free Layers with Insertion Layers
Authors:
Jamileh Beik Mohammadi,
Bartek Kardasz,
Georg Wolf,
Yizhang Chen,
Mustafa Pinarbasi,
Andrew D. Kent
Abstract:
Perpendicularly magnetized CoFeB layers with ultra-thin non-magnetic insertion layers are very widely used as the electrodes in magnetic tunnel junctions for spin transfer magnetic random access memory devices. Exchange interactions play a critical role in determining the thermal stability of magnetic states in such devices and their spin torque switching efficiency. Here the exchange constant of…
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Perpendicularly magnetized CoFeB layers with ultra-thin non-magnetic insertion layers are very widely used as the electrodes in magnetic tunnel junctions for spin transfer magnetic random access memory devices. Exchange interactions play a critical role in determining the thermal stability of magnetic states in such devices and their spin torque switching efficiency. Here the exchange constant of free layers incorporated in full magnetic tunnel junction layer stacks, specifically CoFeB free layers with W insertion layers is determined by magnetization measurements in a broad temperature range. A significant finding is that the exchange constant decreases significantly and abruptly with W insertion layer thickness. The perpendicular magnetic anisotropy shows the opposite trend; it initially increases with W insertion layer thickness and shows a broad maximum for approximately one monolayer (0.3 nm) of W. These results highlight the interdependencies of magnetic characteristics required to optimize the performance of magnetic tunnel junction devices.
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Submitted 22 May, 2019;
originally announced May 2019.
