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Concomitant appearance of conductivity and superconductivity in (111)LaAlO3/SrTiO3 interface with metal cap**
Authors:
R. S. Bisht,
M. Mograbi,
P. K. Rout,
G. Tuvia,
Y. Dagan,
Hyeok Yoon,
A. G. Swartz,
H. Y. Hwang,
L. L. Li,
R. Pentcheva
Abstract:
In polar-oxide interfaces, a certain number of monolayers (ML) is needed for conductivity to appear. This threshold for conductivity is explained by accumulating sufficient electric potential to initiate charge transfer to the interface. Here we study experimentally and theoretically the (111) SrTiO3/LaAlO3 interface where a critical thickness, tc, of nine epitaxial LaAlO3 ML is required to turn t…
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In polar-oxide interfaces, a certain number of monolayers (ML) is needed for conductivity to appear. This threshold for conductivity is explained by accumulating sufficient electric potential to initiate charge transfer to the interface. Here we study experimentally and theoretically the (111) SrTiO3/LaAlO3 interface where a critical thickness, tc, of nine epitaxial LaAlO3 ML is required to turn the interface from insulating to conducting and even superconducting. We show that tc decreases to 3ML when depositing a cobalt over-layer (cap**) and 6ML for platinum cap**. The latter result contrasts with the (100) interface, where platinum cap** increases tc beyond the bare interface. The observed threshold for conductivity for the bare and the metal-capped interfaces is confirmed by our density functional theory calculations. Interestingly, for (111) SrTiO3/LaAlO3/Metal interfaces, conductivity appears concomitantly with superconductivity in contrast with the (100) SrTiO3/LaAlO3/Metal interfaces where tc is smaller than the critical thickness for superconductivity. We attribute this dissimilarity to the different orbital polarization of e'g for the (111) versus dxy for the (001) interface.
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Submitted 19 July, 2021; v1 submitted 14 February, 2021;
originally announced February 2021.
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Chiral superconductivity in the alternate stacking compound 4Hb-TaS$_2$
Authors:
A. Ribak,
R. Majlin Skiff,
M. Mograbi,
P. K. Rout,
M. H. Fischer,
J. Ruhman,
K. Chashka,
Y. Dagan,
A. Kanigel
Abstract:
Layered van der Waals (vdW) materials are emerging as one of the most versatile directions in the field of quantum condensed matter physics. They allow an unprecedented control of electronic properties via stacking of different types of two-dimensional (2D) materials. A fascinating frontier, largely unexplored, is the stacking of strongly-correlated phases of matter in vdW materials. Here, we stud…
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Layered van der Waals (vdW) materials are emerging as one of the most versatile directions in the field of quantum condensed matter physics. They allow an unprecedented control of electronic properties via stacking of different types of two-dimensional (2D) materials. A fascinating frontier, largely unexplored, is the stacking of strongly-correlated phases of matter in vdW materials. Here, we study 4Hb-TaS$_2$, which naturally realizes an alternating stacking of a Mott insulator, recently reported as a gapless spin-liquid candidate(1T-TaS$_2$), and a 2D superconductor (1H-TaS$_2$). This raises the question of how these two components affect each other. We find a superconducting ground state with a transition temperature of 2.7K, which is significantly elevated compared to the 2H polytype (Tc=0.7K). Strikingly, the superconducting state exhibits signatures of time-reversal-symmetry breaking abruptly appearing at the superconducting transition, which can be naturally explained by a chiral superconducting state.
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Submitted 13 May, 2019; v1 submitted 6 May, 2019;
originally announced May 2019.
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Symmetry and correlation effects on band structure explain the anomalous transport properties of (111) LaAlO$_3$/SrTiO$_3$
Authors:
Udit Khanna,
Prasanna K. Rout,
Michael Mograbi,
Gal Tuvia,
Inge Leermakers,
Uli Zeitler,
Yoram Dagan,
Moshe Goldstein
Abstract:
The interface between the two insulating oxides SrTiO$_3$ and LaAlO$_3$ gives rise to a two-dimensional electron system with intriguing transport phenomena, including superconductivity, which are controllable by a gate. Previous measurements on the (001) interface have shown that the superconducting critical temperature, the Hall density, and the frequency of quantum oscillations, vary nonmonotoni…
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The interface between the two insulating oxides SrTiO$_3$ and LaAlO$_3$ gives rise to a two-dimensional electron system with intriguing transport phenomena, including superconductivity, which are controllable by a gate. Previous measurements on the (001) interface have shown that the superconducting critical temperature, the Hall density, and the frequency of quantum oscillations, vary nonmonotonically and in a correlated fashion with the gate voltage. In this paper we experimentally demonstrate that the (111) interface features a qualitatively distinct behavior, in which the frequency of Shubnikov-de Haas oscillations changes monotonically, while the variation of other properties is nonmonotonic albeit uncorrelated. We develop a theoretical model, incorporating the different symmetries of these interfaces as well as electronic-correlation-induced band competition. We show that the latter dominates at (001), leading to similar nonmonotonicity in all observables, while the former is more important at (111), giving rise to highly curved Fermi contours, and accounting for all its anomalous transport measurements.
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Submitted 29 July, 2019; v1 submitted 30 January, 2019;
originally announced January 2019.
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Vortex excitations in the Insulating State of an Oxide Interface
Authors:
M. Mograbi,
E. Maniv,
P. K. Rout,
D. Graf,
J. -H Park,
Y. Dagan
Abstract:
In two-dimensional (2D) superconductors an insulating state can be induced either by applying a magnetic field, $H$, or by increasing disorder. Many scenarios have been put forth to explain the superconductor to insulator transition (SIT): dominating fermionic physics after the breaking of Cooper pairs, loss of phase coherence between superconducting islands embedded in a metallic or insulating ma…
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In two-dimensional (2D) superconductors an insulating state can be induced either by applying a magnetic field, $H$, or by increasing disorder. Many scenarios have been put forth to explain the superconductor to insulator transition (SIT): dominating fermionic physics after the breaking of Cooper pairs, loss of phase coherence between superconducting islands embedded in a metallic or insulating matrix and localization of Cooper pairs with concomitant condensation of vortex-type excitations. The difficulty in characterizing the insulating state and its origin stems from the lack of a continuous map** of the superconducting to insulating phase diagram in a single sample. Here we use the two-dimensional (2D) electron liquid formed at the interface between the two insulators (111) SrTiO$_3$ and LaAlO$_3$ to study the superconductor to insulator transition. This crystalline interface surprisingly exhibits very strong features previously observed only in amorphous systems. By use of electrostatic gating and magnetic fields, the sample is tuned from the metallic region, where supeconductivity is fully manifested, deep into the insulating state. Through examination of the field dependence of the sheet resistance and comparison of the response to fields in different orientations we identify a new magnetic field scale, H$_{pairing}$, where superconducting fluctuations are muted. Our findings show that vortex fluctuations excitations and Cooper pair localization are responsible for the observed SIT and that these excitations surprisingly persist deep into the insulating state.
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Submitted 24 May, 2018;
originally announced May 2018.
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Solution Monolayer Epitaxy for Tunable Atomically Sharp Oxide Interfaces
Authors:
A. Ron,
A. Hevroni,
E. Maniv,
M. Mograbi,
L. **,
C. -L. Jia,
K. W. Urban,
G. Markovich,
Y. Dagan
Abstract:
Epitaxial growth of atomically-sharp interfaces serves as one of the main building blocks of nanofabrication. Such interfaces are crucial for the operation of various devices including transistors, photo-voltaic cells, and memory components. In order to avoid charge traps that may hamper the operation of such devices, it is critical for the layers to be atomically-sharp. Fabrication of atomically…
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Epitaxial growth of atomically-sharp interfaces serves as one of the main building blocks of nanofabrication. Such interfaces are crucial for the operation of various devices including transistors, photo-voltaic cells, and memory components. In order to avoid charge traps that may hamper the operation of such devices, it is critical for the layers to be atomically-sharp. Fabrication of atomically sharp interfaces normally requires ultra-high vacuum techniques and high substrate temperatures. We present here a new self-limiting wet chemical process for deposition of epitaxial layers from alkoxide precursors. This method is fast, cheap, and yields perfect interfaces as we validate by various analysis techniques. It allows the design of heterostructures with half-unit cell resolution. We demonstrate our method by designing hole-type oxide interfaces SrTiO3/BaO/LaAlO3. We show that transport through this interface exhibits properties of mixed electron-hole contributions with hole mobility exceeding that of electrons. Our method and results are an important step forward towards a controllable design of a p-type oxide interface.
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Submitted 11 October, 2017;
originally announced October 2017.
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Strong correlations elucidate the electronic structure and phase-diagram of LaAlO3/SrTiO3 interface
Authors:
E. Maniv,
M. Ben Shalom,
A. Ron,
M. Mograbi,
A. Palevski,
M. Goldstein,
Y. Dagan
Abstract:
The interface between the two band insulators SrTiO3 and LaAlO3 unexpectedly has the properties of a two dimensional electron gas. It is even superconducting with a transition temperature, Tc, that can be tuned using gate bias Vg, which controls the number of electrons added or removed from the interface. The gate bias - temperature (Vg, T) phase diagram is characterized by a dome-shaped region wh…
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The interface between the two band insulators SrTiO3 and LaAlO3 unexpectedly has the properties of a two dimensional electron gas. It is even superconducting with a transition temperature, Tc, that can be tuned using gate bias Vg, which controls the number of electrons added or removed from the interface. The gate bias - temperature (Vg, T) phase diagram is characterized by a dome-shaped region where superconductivity occurs, i.e., Tc has a non-monotonic dependence on Vg, similar to many unconventional superconductors. In this communication the frequency of the quantum resistance-oscillations versus inverse magnetic field is reported for various Vg. This frequency follows the same nonmonotonic behavior as Tc; similar trend is seen in the low field limit of the Hall coefficient. We theoretically show that electronic correlations result in a non-monotonic population of the mobile band, which can account for the experimental behavior of the normal transport properties and the superconducting dome.
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Submitted 11 September, 2015;
originally announced September 2015.
