Showing 1–10 of 10 results for author: Modesti, S

Giant Rashba-Splitting of One-Dimensional Metallic States in Bi Dimer Lines on InAs(100)

Authors: Polina M. Sheverdyaeva, Gustav Bihlmayer, Silvio Modesti, Vitaliy Feyer, Matteo Jugovac, Giovanni Zamborlini, Christian Tusche, Ying-Jiun Chen, Xin Liang Tan, Kenta Hagiwara, Luca Petaccia, Sangeeta Thakur, Asish K. Kundu, Carlo Carbone, Paolo Moras

Abstract: Bismuth produces different types of ordered superstructures on the InAs(100) surface, depending on the growth procedure and coverage. The (2x1) phase forms at completion of a Bi monolayer and consists of a uniformly oriented array of parallel lines of Bi dimers. Scanning tunneling and core level spectroscopies demonstrate its metallic character, in contrast with the semiconducting properties expec… ▽ More Bismuth produces different types of ordered superstructures on the InAs(100) surface, depending on the growth procedure and coverage. The (2x1) phase forms at completion of a Bi monolayer and consists of a uniformly oriented array of parallel lines of Bi dimers. Scanning tunneling and core level spectroscopies demonstrate its metallic character, in contrast with the semiconducting properties expected on the basis of the electron counting principle. The weak electronic coupling among neighboring lines gives rise to quasi one-dimensional Bi-derived bands with open contours at the Fermi level. Spin- and angle-resolved photoelectron spectroscopy reveals a giant Rashba splitting of these bands, in good agreement with ab-initio electronic structure calculations. The very high density of the dimer lines, the metallic and quasi one-dimensional band dispersion and the Rashba-like spin texture make the Bi/InAs(100)-(2x1) phase an intriguing system, where novel transport regimes can be studied. △ Less

Submitted 20 April, 2024; originally announced April 2024.

Comments: 4 figures, includes supplemental material file

Low-Temperature Insulating Phase of the Si(111)--7$\times$7 Surface

Authors: S. Modesti, P. M. Sheverdyaeva, P. Moras, C. Carbone, M. Caputo, M. Marsi, E. Tosatti, G. Profeta

Abstract: We investigated the electronic structure of the Si(111)--7$\times$7 surface below 20 K by scanning tunneling and photoemission spectroscopies and by density functional theory calculations. Previous experimental studies have questioned the ground state of this surface, which is expected to be metallic in a band picture because of the odd number of electrons per unit cell. Our differential conductan… ▽ More We investigated the electronic structure of the Si(111)--7$\times$7 surface below 20 K by scanning tunneling and photoemission spectroscopies and by density functional theory calculations. Previous experimental studies have questioned the ground state of this surface, which is expected to be metallic in a band picture because of the odd number of electrons per unit cell. Our differential conductance spectra instead show the opening of an energy gap at the Fermi level and a significant temperature dependence of the electronic properties, especially for the adatoms at the center of the unfaulted half of the unit cell. Complementary photoemission spectra with improved correction of the surface photovoltage shift corroborate the differential conductance data and demonstrate the absence of surface bands crossing the Fermi level at 17 K. These consistent experimental observations point to an insulating ground state and contradict the prediction of a metallic surface obtained by density functional theory in the generalized gradient approximation. The calculations indicate that this surface has or is near a magnetic instability, but remains metallic in the magnetic phases even including correlation effects at mean-field level. We discuss possible origins of the observed discrepancies between experiments and calculations. △ Less

Submitted 19 April, 2021; originally announced April 2021.

Journal ref: Phys. Rev. B 102, 035429 (2020)

Proximity-induced ferromagnetism and chemical reactivity in few layers VSe2 heterostructures

Authors: G. Vinai, C. Bigi, A. Rajan, M. D. Watson, T. -L. Lee, F. Mazzola, S. Modesti, S. Barua, M. Ciomaga Hatnean, G. Balakrishnan, P. D. C. King, P. Torelli, G. Rossi, G. Panaccione

Abstract: Among Transition-Metal Dichalcogenides, mono and few-layers thick VSe2 has gained much recent attention following claims of intrinsic room-temperature ferromagnetism in this system, which have nonetheless proved controversial. Here, we address the magnetic and chemical properties of Fe/VSe2 heterostructure by combining element sensitive absorption spectroscopy and photoemission spectroscopy. Our x… ▽ More Among Transition-Metal Dichalcogenides, mono and few-layers thick VSe2 has gained much recent attention following claims of intrinsic room-temperature ferromagnetism in this system, which have nonetheless proved controversial. Here, we address the magnetic and chemical properties of Fe/VSe2 heterostructure by combining element sensitive absorption spectroscopy and photoemission spectroscopy. Our x-ray magnetic circular dichroism results confirm recent findings that both native mono/few-layer and bulk VSe2 do not show any signature of an intrinsic ferromagnetic ordering. Nonetheless, we find that ferromagnetism can be induced, even at room temperature, after coupling with a Fe thin film layer, with antiparallel alignment of the moment on the V with respect to Fe. We further consider the chemical reactivity at the Fe/VSe2 interface and its relation with interfacial magnetic coupling. △ Less

Submitted 4 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. B 101, 035404 (2020)

Metallic, Magnetic and Molecular Nanocontacts

Authors: Ryan Requist, Pier Paolo Baruselli, Alexander Smogunov, Michele Fabrizio, Silvio Modesti, Erio Tosatti

Abstract: Scanning tunnelling microscopy and break-junction experiments realize metallic and molecular nanocontacts that act as ideal one-dimensional channels between macroscopic electrodes. Emergent nanoscale phenomena typical of these systems encompass structural, mechanical, electronic, transport, and magnetic properties. This Review focuses on the theoretical explanation of some of these properties obta… ▽ More Scanning tunnelling microscopy and break-junction experiments realize metallic and molecular nanocontacts that act as ideal one-dimensional channels between macroscopic electrodes. Emergent nanoscale phenomena typical of these systems encompass structural, mechanical, electronic, transport, and magnetic properties. This Review focuses on the theoretical explanation of some of these properties obtained with the help of first-principles methods. By tracing parallel theoretical and experimental developments from the discovery of nanowire formation and conductance quantization in gold nanowires to recent observations of emergent magnetism and Kondo correlations, we exemplify the main concepts and ingredients needed to bring together ab initio calculations and physical observations. It can be anticipated that diode, sensor, spin-valve and spin-filter functionalities relevant for spintronics and molecular electronics applications will benefit from the physical understanding thus obtained. △ Less

Submitted 9 June, 2016; originally announced June 2016.

Journal ref: Nature Nanotech. 11, 499-508 (2016)

Kondo conductance across the smallest spin 1/2 radical molecule

Authors: Ryan Requist, Silvio Modesti, Pier Paolo Baruselli, Alexander Smogunov, Michele Fabrizio, Erio Tosatti

Abstract: Molecular contacts are generally poorly conducting because their energy levels tend to lie far from the Fermi energy of the metal contact, necessitating undesirably large gate and bias voltages in molecular electronics applications. Molecular radicals are an exception because their partly filled orbitals undergo Kondo screening, opening the way to electron passage even at zero bias. While that phe… ▽ More Molecular contacts are generally poorly conducting because their energy levels tend to lie far from the Fermi energy of the metal contact, necessitating undesirably large gate and bias voltages in molecular electronics applications. Molecular radicals are an exception because their partly filled orbitals undergo Kondo screening, opening the way to electron passage even at zero bias. While that phenomenon has been experimentally demonstrated for several complex organic radicals, quantitative theoretical predictions have not been attempted so far. It is therefore an open question whether and to what extent an ab initio-based theory is able to make accurate predictions for Kondo temperatures and conductance lineshapes. Choosing nitric oxide NO as a simple and exemplary spin 1/2 molecular radical, we present calculations based on a combination of density functional theory and numerical renormalization group (DFT+NRG) predicting a zero bias spectral anomaly with a Kondo temperature of 15 K for NO/Au(111). A scanning tunneling spectroscopy study is subsequently carried out to verify the prediction, and a striking zero bias Kondo anomaly is confirmed, still quite visible at liquid nitrogen temperatures. Comparison shows that the experimental Kondo temperature of about 43 K is larger than the theoretical one, while the inverted Fano lineshape implies a strong source of interference not included in the model. These discrepancies are not a surprise, providing in fact an instructive measure of the approximations used in the modeling, which supports and qualifies the viability of the DFT+NRG approach to the prediction of conductance anomalies in larger molecular radicals. △ Less

Submitted 27 December, 2013; originally announced December 2013.

Comments: 14 pages including Supporting Information

Journal ref: Proc. Nat. Acad. Sci., vol. 101, 69-74 (2014)

Correction of systematic errors in scanning tunnelling spectra on semiconductor surfaces: the energy gap of Si(111)-7x7 at 0.3 K

Authors: S. Modesti, H. Gutzmann, J. Wiebe, R. Wiesendanger

Abstract: The investigation of the electronic properties of semiconductor surfaces using scanning tunnelling spectroscopy (STS) is often hindered by non-equilibrium transport of the injected charge carriers. We propose a correction method for the resulting systematic errors in STS data, which is demonstrated for the well known Si(111)-(7x7) surface. The surface has an odd number of electrons per surface u… ▽ More The investigation of the electronic properties of semiconductor surfaces using scanning tunnelling spectroscopy (STS) is often hindered by non-equilibrium transport of the injected charge carriers. We propose a correction method for the resulting systematic errors in STS data, which is demonstrated for the well known Si(111)-(7x7) surface. The surface has an odd number of electrons per surface unit cell and is metallic above 20 K. We observe an energy gap in the ground state of this surface by STS at 0.3 K. After correction, the measured width of the gap is (70 +- 15) meV which is compatible with previous less precise estimates. No sharp peak of the density of states at the Fermi level is observed, in contrast to proposed models for the Si(111)-(7x7) surface. △ Less

Submitted 19 August, 2009; originally announced August 2009.

Comments: 10 pages, 4 figures

Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surface

Authors: A. Stroppa, X. Duan, M. Peressi, D. Furlanetto, S. Modesti

Abstract: We present a combined experimental and computational study of the (110) cross-sectional surface of Mn $δ$-doped GaAs samples. We focus our study on three different selected Mn defect configurations not previously studied in details, namely surface interstitial Mn, isolated and in pairs, and substitutional Mn atoms on cationic sites (Mn$_{\rm Ga}$) in the first subsurface layer. The sensitivity o… ▽ More We present a combined experimental and computational study of the (110) cross-sectional surface of Mn $δ$-doped GaAs samples. We focus our study on three different selected Mn defect configurations not previously studied in details, namely surface interstitial Mn, isolated and in pairs, and substitutional Mn atoms on cationic sites (Mn$_{\rm Ga}$) in the first subsurface layer. The sensitivity of the STM images to the specific local environment allows to distinguish between Mn interstitials with nearest neighbor As atoms (Int$_{\rm As}$) rather than Ga atoms (Int$_{\rm Ga}$), and to identify the fingerprint of peculiar satellite features around subsurface substitutional Mn. The simulated STM maps for Int$_{\rm As}$, both isolated and in pairs, and Mn$_{\rm Ga}$ in the first subsurface layer are consistent with some experimental images hitherto not fully characterized. △ Less

Submitted 11 April, 2007; originally announced April 2007.

Comments: 19 pages, 4 figures, to be published in Phys. Rev. B

Journal ref: Phys. Rev. B 75, 195335 (2007)

Cross-sectional imaging of sharp Si interlayers embedded in gallium arsenide

Authors: Xiangmei Duan, Stefano Baroni, Silvio Modesti, Maria Peressi

Abstract: We investigate the electronic properties of the (110) cross-sectional surface of Si-doped GaAs using first-principles techniques. We focus on do** configurations with an equal concentration of Si impurities in cationic and anionic sites, such as occurring in a self-compensating do** regime. In particular we study a bilayer of Si atoms uniformly distributed over two consecutive (001) atomic l… ▽ More We investigate the electronic properties of the (110) cross-sectional surface of Si-doped GaAs using first-principles techniques. We focus on do** configurations with an equal concentration of Si impurities in cationic and anionic sites, such as occurring in a self-compensating do** regime. In particular we study a bilayer of Si atoms uniformly distributed over two consecutive (001) atomic layers. The simulated cross-sectional scanning tunneling microscopy images show a bright signal at negative bias, which is strongly attenuated when the bias is reversed. This scenario is consistent with experimental results which had been attributed to hitherto unidentified Si complexes. △ Less

Submitted 23 March, 2005; originally announced March 2005.

Comments: 10 pages, 3 figures

The order-disorder character of the (3x3) to (sqrt3 x sqrt3)R30° phase transition of Sn on Ge(111)

Authors: L. Petaccia, L. Floreano, A. Goldoni, D. Cvetko, A. Morgante, L. Grill, A. Verdini, G. Comelli, G. Paolucci, S. Modesti

Abstract: Growing attention has been drawn in the past years to the α-phase (1/3 monolayer) of Sn on Ge(111), which undergoes a transition from the low temperature (3x3) phase to the room temperature (\sqrt3 x \sqrt3)R30° one. On the basis of scanning tunnelling microscopy experiments, this transition was claimed to be the manifestation of a surface charge density wave (SCDW), i.e. a periodic redist… ▽ More Growing attention has been drawn in the past years to the α-phase (1/3 monolayer) of Sn on Ge(111), which undergoes a transition from the low temperature (3x3) phase to the room temperature (\sqrt3 x \sqrt3)R30° one. On the basis of scanning tunnelling microscopy experiments, this transition was claimed to be the manifestation of a surface charge density wave (SCDW), i.e. a periodic redistribution of charge, possibly accompanied by a periodic lattice distortion, which determines a change of the surface symmetry. Recent He diffraction studies of the (3x3) long range order have shown the transition to be of the order-disorder type with a critical temperature Tc=220 K and belonging to the 3-state Potts' universality class. These findings clearly exclude an SCDW driven mechanism at 220 K, but they cannot exclude the occurence of a displacive transition at higher temperature. Here we present photoelectron diffraction data taken at 300 K and photoemission data taken up to 500 K (which is the maximum temperature where the (\sqrt3 x \sqrt3)R30° is stable) . From our analysis it is shown that the atomic structure of the Sn overlayer does not change throughout the transition up to 500 K. As a consequence the displacive hypothesis must be discarded in favour of a genuine order-disorder model. △ Less

Submitted 19 October, 2001; v1 submitted 16 March, 2001; originally announced March 2001.

Comments: replaced Fig. 2

Journal ref: Phys. Rev. B 64, (2001) 193410

Determination of the (3x3)-Sn/Ge(111) structure by photoelectron diffraction

Authors: L. Petaccia, L. Floreano, M. Benes, D. Cvetko, A. Goldoni, L. Grill, A. Morgante, A. Verdini, S. Modesti

Abstract: At a coverage of about 1/3 monolayer, Sn deposited on Ge(111) below 550 forms a metastable (sqrt3 x sqrt3)R30 phase. This phase continuously and reversibly transforms into a (3x3) one, upon cooling below 200 K. The photoemission spectra of the Sn 4d electrons from the (3x3)-Sn/Ge(111) surface present two components which are attributed to inequivalent Sn atoms in T4 bonding sites. This structure… ▽ More At a coverage of about 1/3 monolayer, Sn deposited on Ge(111) below 550 forms a metastable (sqrt3 x sqrt3)R30 phase. This phase continuously and reversibly transforms into a (3x3) one, upon cooling below 200 K. The photoemission spectra of the Sn 4d electrons from the (3x3)-Sn/Ge(111) surface present two components which are attributed to inequivalent Sn atoms in T4 bonding sites. This structure has been explored by photoelectron diffraction experiments performed at the ALOISA beamline of the Elettra storage ring in Trieste (Italy). The modulation of the intensities of the two Sn components, caused by the backscattering of the underneath Ge atoms, has been measured as a function of the emission angle at fixed kinetic energies and viceversa. The bond angle between Sn and its nearest neighbour atoms in the first Ge layer (Sn-Ge1) has been measured by taking polar scans along the main symmetry directions and it was found almost equivalent for the two components. The corresponding bond lengths are also quite similar, as obtained by studying the dependence on the photoelectron kinetic energy, while kee** the photon polarization and the collection direction parallel to the Sn-Ge1 bond orientation (bond emission). A clear difference between the two bonding sites is observed when studying the energy dependence at normal emission, where the sensitivity to the Sn height above the Ge atom in the second layer is enhanced. This vertical distance is found to be 0.3 Angstroms larger for one Sn atom out of the three contained in the lattice unit cell. The (3x3)-Sn/Ge(111) is thus characterized by a structure where the Sn atom and its three nearest neighbour Ge atoms form a rather rigid unit that presents a strong vertical distortion with respect to the underneath atom of the second Ge layer. △ Less

Submitted 9 May, 2001; v1 submitted 11 December, 2000; originally announced December 2000.

Comments: 10 pages with 9 figures, added references

Journal ref: Phys. Rev. B, 63 (2001) 115406