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Extreme ultraviolet lithography reaches 5 nm resolution
Authors:
Iason Giannopoulos,
Iacopo Mochi,
Michaela Vockenhuber,
Yasin Ekinci,
Dimitrios Kazazis
Abstract:
Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development of the next generation high-numerical aperture (high-NA) EUV scanners. Hitherto, EUV interference lithography (EUV-IL) utilizing transmission gratings has been a powerful patterning tool for the early development of EUV…
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Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development of the next generation high-numerical aperture (high-NA) EUV scanners. Hitherto, EUV interference lithography (EUV-IL) utilizing transmission gratings has been a powerful patterning tool for the early development of EUV resists and related processes, playing a key role in exploring and pushing the boundaries of photon-based lithography. However, achieving pattering with HPs well below 10 nm using this method presents significant challenges. In response, our study introduces a novel EUV-IL setup that employs mirror-based technology and circumvents the limitations of diffraction efficiency towards the diffraction limit that is inherent in conventional grating-based approaches. We present line/space patterning of HSQ resist down to HP 5 nm using the standard EUV wavelength 13.5 nm, and the compatibility of the tool with shorter wavelengths beyond EUV. The mirror-based interference lithography tool paves the way towards the ultimate photon-based resolution at EUV wavelengths and beyond. This advancement is vital for scientific and industrial research, addressing the increasingly challenging needs of nanoscience and technology and future technology nodes of CMOS manufacturing in the few-nanometer HP regime.
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Submitted 28 February, 2024;
originally announced February 2024.
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Deep learning denoiser assisted roughness measurements extraction from thin resists with low Signal-to-Noise Ratio(SNR) SEM images: analysis with SMILE
Authors:
Sara Sacchi,
Bappaditya Dey,
Iacopo Mochi,
Sandip Halder,
Philippe Leray
Abstract:
The technological advance of High Numerical Aperture Extreme Ultraviolet Lithography (High NA EUVL) has opened the gates to extensive researches on thinner photoresists (below 30nm), necessary for the industrial implementation of High NA EUVL. Consequently, images from Scanning Electron Microscopy (SEM) suffer from reduced imaging contrast and low Signal-to-Noise Ratio (SNR), impacting the measure…
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The technological advance of High Numerical Aperture Extreme Ultraviolet Lithography (High NA EUVL) has opened the gates to extensive researches on thinner photoresists (below 30nm), necessary for the industrial implementation of High NA EUVL. Consequently, images from Scanning Electron Microscopy (SEM) suffer from reduced imaging contrast and low Signal-to-Noise Ratio (SNR), impacting the measurement of unbiased Line Edge Roughness (uLER) and Line Width Roughness (uLWR). Thus, the aim of this work is to enhance the SNR of SEM images by using a Deep Learning denoiser and enable robust roughness extraction of the thin resist. For this study, we acquired SEM images of Line-Space (L/S) patterns with a Chemically Amplified Resist (CAR) with different thicknesses (15nm, 20nm, 25nm, 30nm), underlayers (Spin-On-Glass-SOG, Organic Underlayer-OUL) and frames of averaging (4, 8, 16, 32, and 64 Fr). After denoising, a systematic analysis has been carried out on both noisy and denoised images using an open-source metrology software, SMILE 2.3.2, for investigating mean CD, SNR improvement factor, biased and unbiased LWR/LER Power Spectral Density (PSD). Denoised images with lower number of frames present unaltered Critical Dimensions (CDs), enhanced SNR (especially for low number of integration frames), and accurate measurements of uLER and uLWR, with the same accuracy as for noisy images with a consistent higher number of frames. Therefore, images with a small number of integration frames and with SNR < 2 can be successfully denoised, and advantageously used in improving metrology throughput while maintaining reliable roughness measurements for the thin resist.
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Submitted 23 October, 2023;
originally announced October 2023.
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Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography
Authors:
Roberto Fallica,
Dimitrios Kazazis,
Robert Kirchner,
Anja Voigt,
Iacopo Mochi,
Helmut Schift,
Yasin Ekinci
Abstract:
Pattern transfer by deep anisotropic etch is a well-established technique for fabrication of nanoscale devices and structures. For this technique to be effective, the resist material plays a key role and must have high resolution, reasonable sensitivity and high etch selectivity against the conventional silicon substrate or underlayer film. In this work, the lithographic performance of two high et…
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Pattern transfer by deep anisotropic etch is a well-established technique for fabrication of nanoscale devices and structures. For this technique to be effective, the resist material plays a key role and must have high resolution, reasonable sensitivity and high etch selectivity against the conventional silicon substrate or underlayer film. In this work, the lithographic performance of two high etch resistance materials was evaluated: ZEP520A (Nippon Zeon Co.) and mr-PosEBR (micro resist technology GmbH). Both materials are positive tone, polymer-based and non-chemically amplified resists. Two exposure techniques were used: electron beam lithography (EBL) and extreme ultraviolet (EUV) lithography. These resists were originally designed for EBL patterning, where high quality patterning at sub-100 nm resolution was previously demonstrated. In the scope of this work, we also aim to validate their extendibility to EUV for high resolution and large area patterning. To this purpose, the same EBL process conditions were employed at EUV. The figures of merit, i.e. dose to clear, dose to size, and resolution, were extracted and these results are discussed systematically. It was found that both materials are very fast at EUV (dose to clear lower than 12 mJ/cm2) and are capable of resolving dense lines/space arrays with a resolution of 25 nm half-pitch. The quality of patterns was also very good and the sidewall roughness was below 6 nm. Interestingly, the general-purpose process used for EBL can be extended straightforwardly to EUV lithography with comparable high quality and yield. Our findings open new possibilities for lithographers who wish to devise novel fabrication schemes exploiting EUV for fabrication of nanostructures by deep etch pattern transfer.
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Submitted 24 October, 2017;
originally announced October 2017.
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GIANO-TNG spectroscopy of red supergiants in the young star cluster RSGC2
Authors:
L. Origlia,
E. Oliva,
R. Maiolino,
A. Mucciarelli,
C. Baffa,
V. Biliotti,
P. Bruno,
G. Falcini,
V. Gavriousev,
F. Ghinassi,
E. Giani,
M. Gonzalez,
F. Leone,
M. Lodi,
F. Massi,
P. Montegriffo,
I. Mochi,
M. Pedani,
E. Rossetti,
S. Scuderi,
M. Sozzi,
A. Tozzi
Abstract:
The inner disk of the Galaxy has a number of young star clusters dominated by red supergiants that are heavily obscured by dust extinction and observable only at infrared wavelengths. These clusters are important tracers of the recent star formation and chemical enrichment history in the inner Galaxy. During the technical commissioning and as a first science verification of the GIANO spectrograph…
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The inner disk of the Galaxy has a number of young star clusters dominated by red supergiants that are heavily obscured by dust extinction and observable only at infrared wavelengths. These clusters are important tracers of the recent star formation and chemical enrichment history in the inner Galaxy. During the technical commissioning and as a first science verification of the GIANO spectrograph at the Telescopio Nazionale Galileo, we secured high-resolution (R~50,000) near-infrared spectra of three red supergiants in the young Scutum cluster RSGC2. Taking advantage of the full YJHK spectral coverage of GIANO in a single exposure, we were able to identify several tens of atomic and molecular lines suitable for chemical abundance determinations. By means of spectral synthesis and line equivalent width measurements, we obtained abundances of Fe and other iron-peak elements such as V, Cr, Ni, of alpha (O, Mg, Si, Ca and Ti) and other light elements (C, N, Na, Al, K, Sc), and of some s-process elements (Y, Sr). We found iron abundances between half and one third solar and solar-scaled [X/Fe] abundance patterns of iron-peak, alpha and most of the light elements, consistent with a thin-disk chemistry. We found a depletion of [C/Fe] and enhancement of [N/Fe], consistent with CN burning, and low 12C/13C abundance ratios (between 9 and 11), requiring extra-mixing processes in the stellar interiors during the post-main sequence evolution. Finally, we found a slight [Sr/Fe] enhancement and a slight [Y/Fe] depletion (by a factor of <=2), with respect to solar.
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Submitted 7 November, 2013;
originally announced November 2013.
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A GIANO-TNG high resolution IR spectrum of the airglow emission
Authors:
E. Oliva,
L. Origlia,
R. Maiolino,
C. Baffa,
V. Biliotti,
P. Bruno,
G. Falcini,
V. Gavriousev,
F. Ghinassi,
E. Giani,
M. Gonzalez,
F. Leone,
M. Lodi,
F. Massi,
P. Montegriffo,
I. Mochi,
M. Pedani,
E. Rossetti,
S. Scuderi,
M. Sozzi,
A. Tozzi,
E. Valenti
Abstract:
A flux-calibrated high resolution spectrum of the airglow emission is a practical lambda-calibration reference for astronomical spectral observations. It is also useful for constraining the molecular parameters of the OH molecule and the physical conditions in the upper mesosphere. methods: We use the data collected during the first technical commissioning of the GIANO spectrograph at the Telescop…
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A flux-calibrated high resolution spectrum of the airglow emission is a practical lambda-calibration reference for astronomical spectral observations. It is also useful for constraining the molecular parameters of the OH molecule and the physical conditions in the upper mesosphere. methods: We use the data collected during the first technical commissioning of the GIANO spectrograph at the Telescopio Nazionale Galileo (TNG). The high resolution (R~50,000) spectrum simultaneously covers the 0.95-2.4 micron wavelength range. Relative flux calibration is achieved by the simultaneous observation of spectrophotometric standard star. results: We derive a list of improved positions and intensities of OH infrared lines. The list includes Lambda-split doublets many of which are spectrally resolved. Compared to previous works, the new results correct errors in the wavelengths of the Q-branch transitions. The relative fluxes of OH lines from different vibrational bands show remarkable deviations from theoretical predictions: the Deltav=3,4 lines are a factor of 2 and 4 brighter than expected. We also find evidence of a significant fraction (1-4%) of OH molecules with ``non-thermal'' population of high-J levels. Finally we list wavelengths and fluxes of 153 lines not attributable to OH. Most of these can be associated to O2, while 37 lines in the H band are not identified. The O2 and unidentified lines in the H band account for ~5% of the total airglow flux in this band.
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Submitted 14 May, 2013;
originally announced May 2013.
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Bessel beam propagation: Energy localization and velocity
Authors:
D. Mugnai,
I. Mochi
Abstract:
The propagation of a Bessel beam (or Bessel-X wave) is analyzed on the basis of a vectorial treatment. The electric and magnetic fields are obtained by considering a realistic situation able to generate that kind of scalar field. Specifically, we analyze the field due to a ring-shaped aperture over a metallic screen on which a linearly polarized plane wave im**es. On this basis, and in the far…
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The propagation of a Bessel beam (or Bessel-X wave) is analyzed on the basis of a vectorial treatment. The electric and magnetic fields are obtained by considering a realistic situation able to generate that kind of scalar field. Specifically, we analyze the field due to a ring-shaped aperture over a metallic screen on which a linearly polarized plane wave im**es. On this basis, and in the far field approximation, we can obtain information about the propagation of energy flux and the velocity of the energy.
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Submitted 16 June, 2005; v1 submitted 14 June, 2005;
originally announced June 2005.
