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In-Plane Magnetoconductance Map** of InSb Quantum Wells
Authors:
J. T. Mlack,
K. S. Wickramasinghe,
T. D. Mishima,
M. B. Santos,
C. M. Marcus
Abstract:
In-plane magnetoconductance of InSb quantum wells (QW) containing a two dimensional electron gas (2DEG) is presented. Using a vector magnet, we created a magnetoconductance map which shows the suppression of weak antilocalization (WAL) as a function of applied field. By fitting the in-plane field response of the 2DEG, we estimate material disorder and g-factor as a function of crystal direction. T…
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In-plane magnetoconductance of InSb quantum wells (QW) containing a two dimensional electron gas (2DEG) is presented. Using a vector magnet, we created a magnetoconductance map which shows the suppression of weak antilocalization (WAL) as a function of applied field. By fitting the in-plane field response of the 2DEG, we estimate material disorder and g-factor as a function of crystal direction. The in-plane WAL suppression is found to be dominated by the Zeeman effect and to show a small crystal-orientation-dependent anistropy in disorder and g-factor. These measurements show the utility of multi-directional measurement of magnetoconductance in analyzing material properties.
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Submitted 20 February, 2019;
originally announced February 2019.
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Scalable in operando strain tuning in nanophotonic waveguides enabling three-quantum dot superradiance
Authors:
Joel Q. Grim,
Allan S. Bracker,
Maxim Zalalutdinov,
Samuel G. Carter,
Alexander C. Kozen,
Mi** Kim,
Chul Soo Kim,
Jerome T. Mlack,
Michael Yakes,
Bumsu Lee,
Daniel Gammon
Abstract:
The quest for an integrated quantum optics platform has motivated the field of semiconductor quantum dot research for two decades. Demonstrations of quantum light sources, single photon switches, transistors, and spin-photon interfaces have become very advanced. Yet the fundamental problem that every quantum dot is different prevents integration and scaling beyond a few quantum dots. Here, we addr…
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The quest for an integrated quantum optics platform has motivated the field of semiconductor quantum dot research for two decades. Demonstrations of quantum light sources, single photon switches, transistors, and spin-photon interfaces have become very advanced. Yet the fundamental problem that every quantum dot is different prevents integration and scaling beyond a few quantum dots. Here, we address this challenge by patterning strain via local phase transitions to selectively tune individual quantum dots that are embedded in a photonic architecture. The patterning is implemented with in operando laser crystallization of a thin HfO$_{2}$ film "sheath" on the surface of a GaAs waveguide. Using this approach, we tune InAs quantum dot emission energies over the full inhomogeneous distribution with a step size down to the homogeneous linewidth and a spatial resolution better than 1 $μ$m. Using these capabilities, we tune multiple quantum dots into resonance within the same waveguide and demonstrate a quantum interaction via superradiant emission from three quantum dots.
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Submitted 7 January, 2020; v1 submitted 11 October, 2018;
originally announced October 2018.
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TEM Nanosculpting of Topological Insulator Bi$_2$Se$_3$
Authors:
Sarah Friedensen,
William M. Parkin,
Jerome T. Mlack,
Marija Drndic
Abstract:
We present a process for sculpting Bi$_2$Se$_3$ nanoflakes into application-relevant geometries using a high resolution transmission electron microscope. This process takes several minutes to sculpt small areas and can be used to cut the Bi$_2$Se$_3$ into wires and rings, to thin areas of the Bi$_2$Se$_3$, and to drill circular holes and lines. We determined that this method allows for sub 10-nm f…
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We present a process for sculpting Bi$_2$Se$_3$ nanoflakes into application-relevant geometries using a high resolution transmission electron microscope. This process takes several minutes to sculpt small areas and can be used to cut the Bi$_2$Se$_3$ into wires and rings, to thin areas of the Bi$_2$Se$_3$, and to drill circular holes and lines. We determined that this method allows for sub 10-nm features and results in clean edges along the drilled regions. Using in-situ high-resolution imaging, selected area diffraction, and atomic force microscopy, we found that this lithography process preserves the crystal structure of Bi$_2$Se$_3$. TEM sculpting is more precise and potentially results in cleaner edges than does ion-beam modification; therefore, the promise of this method for thermoelectric and topological devices calls for further study into the transport properties of such structures.
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Submitted 5 December, 2017;
originally announced December 2017.
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Materials analysis and focused ion beam nanofabrication of topological insulator Bi2Se3
Authors:
Sarah Friedensen,
Jerome T. Mlack,
Marija Drndić
Abstract:
Focused ion beam milling allows manipulation of the shape and size of nanostructures to create geometries potentially useful for opto-electronics, thermoelectrics, and quantum computing. We focus on using the ion beam to control the thickness of Bi2Se3 and to create nanowires from larger structures. Changes in the material structure of Bi2Se3 nanomaterials that have been milled using a focused ion…
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Focused ion beam milling allows manipulation of the shape and size of nanostructures to create geometries potentially useful for opto-electronics, thermoelectrics, and quantum computing. We focus on using the ion beam to control the thickness of Bi2Se3 and to create nanowires from larger structures. Changes in the material structure of Bi2Se3 nanomaterials that have been milled using a focused ion beam are presented. In order to characterize the effects of ion beam processing on the samples, we use a variety of techniques including analytical transmission electron microscopy and atomic force microscopy. The results show that while part of the material remains intact after sha**, amorphous regions form where the beam has been used to thin the sample. For wires created by thinning the material down to the substrate, the sidewalls of the wires appear intact based on diffraction images from samples cut at an angle, but thin crystalline regions remain at the wire edges. Even with the resulting defects, focused ion beam milling shows promise for directly fabricating intricate nanodevices of Bi2Se3.
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Submitted 20 June, 2017;
originally announced June 2017.
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Patterning Superconductivity in a Topological Insulator
Authors:
Jerome T. Mlack,
Atikur Rahman,
Gopinath Danda,
Natalia Drichko,
Sarah Friedensen,
Marija Drndic,
Nina Markovic
Abstract:
While topological superconductors are predicted to provide building blocks for fault-tolerant quantum computing, one of the remaining challenges is to find a convenient experimental platform that would allow patterning of circuits. We find that superconductivity can be patterned directly into Bi$_2$Se$_3$ nanostructures by selective do** with palladium (Pd). Superconducting regions are defined b…
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While topological superconductors are predicted to provide building blocks for fault-tolerant quantum computing, one of the remaining challenges is to find a convenient experimental platform that would allow patterning of circuits. We find that superconductivity can be patterned directly into Bi$_2$Se$_3$ nanostructures by selective do** with palladium (Pd). Superconducting regions are defined by depositing Pd on top of the nanostructures using electron beam lithography, followed by in-situ annealing. Electrical transport measurements at low temperatures show either partial or full superconducting transition, depending on the do** conditions. Structural characterization techniques indicate that Pd remains localized in the targeted areas, making it possible to pattern superconducting circuits of arbitrary shapes in this topological material.
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Submitted 27 October, 2016;
originally announced October 2016.
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Substrate-Independent Catalyst-Free Synthesis of High-Purity Bi2Se3 Nanostructures
Authors:
Jerome T. Mlack,
Atikur Rahman,
Gary L. Johns,
Kenneth J. T. Livi,
Nina Markovic
Abstract:
We describe a catalyst-free vapor-solid synthesis of bismuth selenide (Bi2Se3) nanostructures at ambient pressure with hydrogen as a carrier gas. The nanostructures were synthesized on glass, silicon and mica substrates and the method yields a variety of nanostructures: nanowires, nanoribbons, nanoplatelets and nanoflakes. The materials analysis shows high chemical purity in all cases, without sac…
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We describe a catalyst-free vapor-solid synthesis of bismuth selenide (Bi2Se3) nanostructures at ambient pressure with hydrogen as a carrier gas. The nanostructures were synthesized on glass, silicon and mica substrates and the method yields a variety of nanostructures: nanowires, nanoribbons, nanoplatelets and nanoflakes. The materials analysis shows high chemical purity in all cases, without sacrificing the crystalline structure of Bi2Se3. Low-temperature measurements of the nanostructures indicate contributions from the surface states with a tunable carrier density. Samples synthesized on flexible mica substrates show no significant change in resistance upon bending, indicating robustness of as-grown Bi2Se3 nanostructures and their suitability for device applications.
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Submitted 4 April, 2013;
originally announced April 2013.
