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Adaptive Semi-Supervised Intent Inferral to Control a Powered Hand Orthosis for Stroke
Authors:
**gxi Xu,
Cassie Meeker,
Ava Chen,
Lauren Winterbottom,
Michaela Fraser,
Sangwoo Park,
Lynne M. Weber,
Mitchell Miya,
Dawn Nilsen,
Joel Stein,
Matei Ciocarlie
Abstract:
In order to provide therapy in a functional context, controls for wearable robotic orthoses need to be robust and intuitive. We have previously introduced an intuitive, user-driven, EMG-based method to operate a robotic hand orthosis, but the process of training a control that is robust to concept drift (changes in the input signal) places a substantial burden on the user. In this paper, we explor…
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In order to provide therapy in a functional context, controls for wearable robotic orthoses need to be robust and intuitive. We have previously introduced an intuitive, user-driven, EMG-based method to operate a robotic hand orthosis, but the process of training a control that is robust to concept drift (changes in the input signal) places a substantial burden on the user. In this paper, we explore semi-supervised learning as a paradigm for controlling a powered hand orthosis for stroke subjects. To the best of our knowledge, this is the first use of semi-supervised learning for an orthotic application. Specifically, we propose a disagreement-based semi-supervision algorithm for handling intrasession concept drift based on multimodal ipsilateral sensing. We evaluate the performance of our algorithm on data collected from five stroke subjects. Our results show that the proposed algorithm helps the device adapt to intrasession drift using unlabeled data and reduces the training burden placed on the user. We also validate the feasibility of our proposed algorithm with a functional task; in these experiments, two subjects successfully completed multiple instances of a pick-and-handover task.
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Submitted 1 March, 2022; v1 submitted 30 October, 2020;
originally announced November 2020.
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Exchange-driven magnetoresistance in silicon facilitated by electrical spin injection
Authors:
Yuichiro Ando,
Lan Qing,
Yang Song,
Shinya Yamada,
Kenji Kasahara,
Kentarou Sawano,
Masanobu Miyao,
Hanan Dery,
Kohei Hamaya
Abstract:
We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the efficiency of exchange in imprinting spin information from the magnetic lead onto the localized moments in the Si:P region. A unique Lorentzian-shaped signal existing only at low temperatures ($\lesssim 25 K$) is observed e…
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We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the efficiency of exchange in imprinting spin information from the magnetic lead onto the localized moments in the Si:P region. A unique Lorentzian-shaped signal existing only at low temperatures ($\lesssim 25 K$) is observed experimentally and analyzed theoretically in electrical Hanle effect measurement. It stems from spin-dependent scattering of electrons by neutral impurities in Si:P. The shape of this signal is not directly related to spin relaxation but to exchange interaction between spin-polarized electrons that are localized on adjacent impurities.
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Submitted 18 March, 2014;
originally announced March 2014.
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Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes
Authors:
K. Kasahara,
Y. Fujita,
S. Yamada,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect curves are demonstrated at low temperatures, indicating generation, manipulation, and detection of pure spin currents in n-Ge. The obtained spin generation efficiency of ~ 0.12 is about two orders of magnitude larger than t…
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We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect curves are demonstrated at low temperatures, indicating generation, manipulation, and detection of pure spin currents in n-Ge. The obtained spin generation efficiency of ~ 0.12 is about two orders of magnitude larger than that for a device with Fe/MgO tunnel-barrier contacts reported previously. Taking the spin related behavior with temperature evolution into account, we infer that it is necessary to simultaneously demonstrate the high spin generation efficiency and improve the quality of the transport channel for achieving Ge based spintronic devices.
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Submitted 26 November, 2013;
originally announced November 2013.
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Effect of Co-Fe substitutions on the room-temperature spin polarization in Co_3-xFe_xSi Heusler-compound films
Authors:
K. Tanikawa,
S. Oki,
S. Yamada,
K. Mibu,
M. Miyao,
K. Hamaya
Abstract:
Using low-temperature molecular beam epitaxy, we study substitutions of Fe atoms for Co ones in Co_3-xFe_xSi Heusler-compound films grown on Si and Ge. Even for the low-temperature grown Heusler-compound films, the Co-Fe atomic substitution at A and C sites can be confirmed by the conversion electron M"ossbauer spectroscopy measurements. As a result, the magnetic moment and room-temperature spin p…
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Using low-temperature molecular beam epitaxy, we study substitutions of Fe atoms for Co ones in Co_3-xFe_xSi Heusler-compound films grown on Si and Ge. Even for the low-temperature grown Heusler-compound films, the Co-Fe atomic substitution at A and C sites can be confirmed by the conversion electron M"ossbauer spectroscopy measurements. As a result, the magnetic moment and room-temperature spin polarization estimated by nonlocal spin-valve measurements are systematically changed with the Co-Fe substitutions. This study experimentally verified that the Co-Fe substitution in Co_3-xFe_xSi Heusler compounds can directly affect the room-temperature spin polarization.
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Submitted 11 January, 2013;
originally announced January 2013.
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Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
Authors:
K. Hamaya,
Y. Ando,
K. Masaki,
Y. Maeda,
Y. Fujita,
S. Yamada,
K. Sawano,
M. Miyao
Abstract:
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a do** density of ~ 4.5*10^15cm^-3 at room temperature. By applying the gate voltage (V_G) to the channel, we obtain sufficient bias currents (I_Bias) for creating spin accumulation in…
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Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a do** density of ~ 4.5*10^15cm^-3 at room temperature. By applying the gate voltage (V_G) to the channel, we obtain sufficient bias currents (I_Bias) for creating spin accumulation in the channel and observe clear spin-accumulation signals even at room temperature. Whereas the magnitude of the spin signals is enhanced by increasing I_Bias, it is reduced by increasing V_G interestingly. These features can be understood within the framework of the conventional spin diffusion model. As a result, a room-temperature spin injection technique for the nondegenerated Si channel without using insulating tunnel barriers is established, which indicates a technological progress for Si-based spintronic applications with gate electrodes.
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Submitted 15 May, 2013; v1 submitted 29 November, 2012;
originally announced November 2012.
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Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic Silicide
Authors:
S. Yamada,
K. Tanikawa,
M. Miyao,
K. Hamaya
Abstract:
We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obtain an artificially controlled arrangement of silicon (Si) or iron (Fe) atoms at the surface on Fe3Si(111). The Si-terminated Fe3Si(111) surface enables us to grow two-dimensional epitaxial Ge films, whereas the Fe-termi…
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We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obtain an artificially controlled arrangement of silicon (Si) or iron (Fe) atoms at the surface on Fe3Si(111). The Si-terminated Fe3Si(111) surface enables us to grow two-dimensional epitaxial Ge films, whereas the Fe-terminated one causes the three-dimensional epitaxial growth of Ge films. The high-quality Ge grown on the Si-terminated surface has almost no strain, meaning that the Ge films are not grown on the low-temperature-grown Si buffer layer but on the lattice matched metallic Fe3Si. This study will open a new way for vertical-type Ge-channel transistors with metallic source/drain contacts.
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Submitted 3 October, 2012;
originally announced October 2012.
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Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon
Authors:
Y. Ando,
S. Yamada,
K. Kasahara,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. Clear reduction in the spin accumulation signals can be seen by introducing the domain walls in the CoFe contact, caused by the lateral spin transport in the Si channel. The domain walls in the CoFe contact largely affect…
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We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. Clear reduction in the spin accumulation signals can be seen by introducing the domain walls in the CoFe contact, caused by the lateral spin transport in the Si channel. The domain walls in the CoFe contact largely affect the spin lifetime and bias-current dependence of the spin signals. These results indicate that the estimation of the spin related properties without considering the domain structure in the contact causes non-negligible errors in the three-terminal Hanle-effect measurements.
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Submitted 1 October, 2012;
originally announced October 2012.
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Evidence for the Presence of Spin Accumulation in Localized States at Ferromagnet-Silicon Interfaces
Authors:
Y. Ando,
S. Yamada,
K. Kasahara,
K. Masaki,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoFe/$n^{+}$-Si/$n$-Si lateral devices. By controlling the measurement temperature, we can clearly observe marked changes in the spin-accumulation signals at low temperatures, at which the electron transport across the inte…
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We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoFe/$n^{+}$-Si/$n$-Si lateral devices. By controlling the measurement temperature, we can clearly observe marked changes in the spin-accumulation signals at low temperatures, at which the electron transport across the interface changes from the direct tunneling to the two-step one via the localized states. We discuss in detail the difference in the spin accumulation between in the Si channel and in the localized states.
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Submitted 4 July, 2012;
originally announced July 2012.
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Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel
Authors:
Y. Ando,
K. Kasahara,
S. Yamada,
Y. Maeda,
K. Masaki,
Y. Hoshi,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin sign…
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We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin signals can be enhanced despite the rise of temperature. For the interpretation of the temperature-dependent spin signals, it is important to consider the sensitivity of the spin detection at the Schottky-tunnel-barrier contact in addition to the spin diffusion in Si.
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Submitted 28 January, 2012;
originally announced January 2012.
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Estimation of the spin polarization for Heusler-compound thin films by means of nonlocal spin-valve measurements: Comparison of Co$_{2}$FeSi and Fe$_{3}$Si
Authors:
K. Hamaya,
N. Hashimoto,
S. Oki,
S. Yamada,
M. Miyao,
T. Kimura
Abstract:
We study room-temperature generation and detection of pure spin currents using lateral spin-valve devices with Heusler-compound electrodes, Co$_{2}$FeSi (CFS) or Fe$_{3}$Si (FS). The magnitude of the nonlocal spin-valve (NLSV) signals is seriously affected by the dispersion of the resistivity peculiarly observed in the low-temperature grown Heusler compounds with ordered structures. From the analy…
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We study room-temperature generation and detection of pure spin currents using lateral spin-valve devices with Heusler-compound electrodes, Co$_{2}$FeSi (CFS) or Fe$_{3}$Si (FS). The magnitude of the nonlocal spin-valve (NLSV) signals is seriously affected by the dispersion of the resistivity peculiarly observed in the low-temperature grown Heusler compounds with ordered structures. From the analysis based on the one-dimensional spin diffusion model, we find that the spin polarization monotonically increases with decreasing the resistivity, which depends on the structural ordering, for both CFS and FS electrodes, and verify that CFS has relatively large spin polarization compared with FS.
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Submitted 14 January, 2012; v1 submitted 3 November, 2011;
originally announced November 2011.
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Electric-field control of spin accumulation signals in silicon at room temperature
Authors:
Y. Ando,
Y. Maeda,
K. Kasahara,
S. Yamada,
K. Masaki,
Y. Hoshi,
K. Sawano,
K. Izunome,
A. Sakai,
M. Miyao,
K. Hamaya
Abstract:
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a back-gate voltage, we clearly observe the three-terminal Hanle-effect signal, i.e., spin-accumulation signal. The magnitude of the spin-accumulation signals can be red…
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We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a back-gate voltage, we clearly observe the three-terminal Hanle-effect signal, i.e., spin-accumulation signal. The magnitude of the spin-accumulation signals can be reduced with increasing the gate voltage. We consider that the gate controlled spin signals are attributed to the change in the carrier density in the Si channel beneath the CoFe/$n^{+}$-Si contact. This study is not only a technological jump for Si-based spintronic applications with gate structures but also reliable evidence for the spin injection into the semiconducting Si channel at room temperature.
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Submitted 24 August, 2011;
originally announced August 2011.
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Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces
Authors:
K. Kasahara,
S. Yamada,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the Fe$_{3}$Si/Ge(111) heterostructure developed originally, we can explore electrical transport properties through atomically matched metal/Ge junctions. Unlike the conventional metal/$p$-Ge junctions reported so far, we clearly observe rectifying current-voltage characteristics with…
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The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the Fe$_{3}$Si/Ge(111) heterostructure developed originally, we can explore electrical transport properties through atomically matched metal/Ge junctions. Unlike the conventional metal/$p$-Ge junctions reported so far, we clearly observe rectifying current-voltage characteristics with a measurable Schottky barrier height, depending on the contact area of the Fe$_{3}$Si/Ge(111) junction. These results indicate that one should distinguish between intrinsic and extrinsic mechanisms for discussing the formation of the Schottky barrier at metal/Ge interfaces. This study will be developed for understanding FLP for almost all the metal/semiconductor interfaces.
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Submitted 18 August, 2011;
originally announced August 2011.
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Room-temperature generation of giant pure spin currents using Co$_2$FeSi spin injectors
Authors:
T. Kimura,
N. Hashimoto,
S. Yamada,
M. Miyao,
K. Hamaya
Abstract:
Generation, manipulation, and detection of a pure spin current, i.e., the flow of spin angular momentum without a charge current, are prospective approaches for realizing next-generation spintronic devices with ultra low electric power consumptions. Conventional ferromagnetic electrodes such as Co and NiFe have so far been utilized as a spin injector for generating the pure spin currents in nonmag…
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Generation, manipulation, and detection of a pure spin current, i.e., the flow of spin angular momentum without a charge current, are prospective approaches for realizing next-generation spintronic devices with ultra low electric power consumptions. Conventional ferromagnetic electrodes such as Co and NiFe have so far been utilized as a spin injector for generating the pure spin currents in nonmagnetic channels. However, the generation efficiency of the pure spin currents is extremely low at room temperature, giving rise to a serious obstacle for device applications. Here, we demonstrate the generation of giant pure spin currents at room temperature in lateral spin valve devices with a highly ordered Heusler-compound Co$_2$FeSi spin injector. The generation efficiency of the pure spin currents for the Co$_2$FeSi spin injectors reaches approximately one hundred times as large as that for NiFe ones, indicating that Heusler-compound spin injectors enable us to materialize a high-performance lateral spin device. The present study is a technological jump in spintronics and indicates the great potential of ferromagnetic Heusler compounds with half metallicity for generating pure spin currents.
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Submitted 13 August, 2011; v1 submitted 31 July, 2011;
originally announced August 2011.
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Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
Authors:
K. Kasahara,
Y. Baba,
K. Yamane,
Y. Ando,
S. Yamada,
Y. Hoshi,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
Using high-quality Fe$_{3}$Si/$n^{+}$-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$-type germanium ($n$-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created…
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Using high-quality Fe$_{3}$Si/$n^{+}$-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$-type germanium ($n$-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created in the $n$-Ge channel. The estimated spin lifetime in $n$-Ge at 50 K is one order of magnitude shorter than those in $n$-Si reported recently. The magnitude of the spin signals cannot be explained by the commonly used spin diffusion model. We discuss a possible origin of the difference between experimental data and theoretical values.
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Submitted 18 October, 2011; v1 submitted 5 May, 2011;
originally announced May 2011.
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Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact
Authors:
Y. Ando,
K. Kasahara,
K. Yamane,
Y. Baba,
Y. Maeda,
Y. Hoshi,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be…
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We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be considered that the electrical detectability of the forward-biased contact is higher than that of the reverse-biased contact. This is possible evidence for the detection of spin-polarized electrons created in a Si channel.
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Submitted 18 July, 2011; v1 submitted 13 April, 2011;
originally announced April 2011.
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Epitaxial Growth of a Full-Heusler Alloy Co$_{2}$FeSi on Silicon by Low-Temperature Molecular Beam Epitaxy
Authors:
S. Yamada,
K. Yamamoto,
K. Ueda,
Y. Ando,
K. Hamaya,
T. Sadoh,
M. Miyao
Abstract:
For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi thin films on silicon substrates using low-temperature molecular beam epitaxy (LTMBE). Although in-situ reflection high energy electron diffraction images clearly show two-dimensional epitaxial growth for growth temperatures T_G of 60,…
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For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi thin films on silicon substrates using low-temperature molecular beam epitaxy (LTMBE). Although in-situ reflection high energy electron diffraction images clearly show two-dimensional epitaxial growth for growth temperatures T_G of 60, 130, and 200 C, cross-sectional transmission electron microscopy experiments reveal that there are single-crystal phases other than Heusler alloys near the interface between Co_2FeSi and Si for T_G = 130 and 200 C. On the other hand, almost perfect heterointerfaces are achieved for T_G = 60 C. These results and magnetic measurements indicate that highly epitaxial growth of Co_2FeSi thin films on Si is demonstrated only for T_G = 60 C.
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Submitted 16 June, 2009;
originally announced June 2009.
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Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier
Authors:
Y. Ando,
K. Hamaya,
K. Kasahara,
Y. Kishi,
K. Ueda,
K. Sawano,
T. Sadoh,
M. Miyao
Abstract:
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias char…
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We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe_3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe_3Si/Si contacts, we detect nonlocal output signals which originate from the spin accumulation in a Si channel at low temperatures.
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Submitted 6 May, 2009; v1 submitted 20 April, 2009;
originally announced April 2009.
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Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe_3-xMn_xSi Epilayers Grown on Ge(111)
Authors:
K. Hamaya,
H. Itoh,
O. Nakatsuka,
K. Ueda,
K. Yamamoto,
M. Itakura,
T. Taniyama,
T. Ono,
M. Miyao
Abstract:
For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloys Fe_3-xMn_xSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L2_1-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x ~ 0.6…
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For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloys Fe_3-xMn_xSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L2_1-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x ~ 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe_3-xMn_xSi alloys become half-metallic for 0.75 < x < 1.5. We discuss the possibility of room-temperature ferromagnetic Fe_3-xMn_xSi/Ge epilayers with high spin polarization.
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Submitted 16 April, 2009;
originally announced April 2009.
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Epitaxial ferromagnetic Fe$_{3}$Si/Si(111) structures with high-quality hetero-interfaces
Authors:
K. Hamaya,
K. Ueda,
Y. Kishi,
Y. Ando,
T. Sadoh,
M. Miyao
Abstract:
To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe$_{3}$Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 $^circ$C, we realize epitaxial growth of ferromagnetic Fe$_{3}$Si layers on Si (111) with kee** an abrupt interface, and the grown Fe$_{3}$Si layer has the ordered $DO_{3}$ phase. Measurements of magnetic and electrical…
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To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe$_{3}$Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 $^circ$C, we realize epitaxial growth of ferromagnetic Fe$_{3}$Si layers on Si (111) with kee** an abrupt interface, and the grown Fe$_{3}$Si layer has the ordered $DO_{3}$ phase. Measurements of magnetic and electrical properties for the Fe$_{3}$Si/Si(111) yield a magnetic moment of ~ 3.16 $mu_{B}$/f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of ~ 1.08, respectively.
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Submitted 15 October, 2008;
originally announced October 2008.
