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Pauli Blockade of Tunable Two-Electron Spin and Valley States in Graphene Quantum Dots
Authors:
Chuyao Tong,
Annika Kurzmann,
Rebekka Garreis,
Wei Wister Huang,
Samuel Jele,
Marius Eich,
Lev Ginzburg,
Christopher Mittag,
Kenji Watanabe,
Takashi Taniguchi,
Klaus Ensslin,
Thomas Ihn
Abstract:
Pauli blockade mechanisms -- whereby carrier transport through quantum dots is blocked due to selection rules even when energetically allowed -- are a direct manifestation of the Pauli exclusion principle, as well as a key mechanism for manipulating and reading out spin qubits. Pauli spin blockade is well established for systems such as GaAs QDs, but is to be further explored for systems with addi…
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Pauli blockade mechanisms -- whereby carrier transport through quantum dots is blocked due to selection rules even when energetically allowed -- are a direct manifestation of the Pauli exclusion principle, as well as a key mechanism for manipulating and reading out spin qubits. Pauli spin blockade is well established for systems such as GaAs QDs, but is to be further explored for systems with additional degrees of freedom, such as the valley quantum numbers in carbon-based materials or silicon. Here we report experiments on coupled bilayer graphene double quantum dots, in which the spin and valley states are precisely controlled, enabling the observation of the two-electron combined blockade physics. We demonstrate that the doubly occupied single dot switches between two different ground states with gate and magnetic-field tuning, allowing for the switching of selection rules: with a spin-triplet--valley-singlet ground state, valley-blockade is observed; and with the spin-singlet--valley-triplet ground state, robust spin blockade is shown.
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Submitted 10 February, 2022; v1 submitted 8 June, 2021;
originally announced June 2021.
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Kondo effect and spin-orbit coupling in graphene quantum dots
Authors:
Annika Kurzmann,
Yaakov Kleeorin,
Chuyao Tong,
Rebekka Garreis,
Angelika Knothe,
Marius Eich,
Christopher Mittag,
Carolin Gold,
Folkert K. de Vries,
Kenji Watanabe,
Takashi Taniguchi,
Vladimir Fal'ko,
Yigal Meir,
Thomas Ihn,
Klaus Ensslin
Abstract:
The Kondo effect is a cornerstone in the study of strongly correlated fermions. The coherent exchange coupling of conduction electrons to local magnetic moments gives rise to a Kondo cloud that screens the impurity spin. Whereas complete Kondo screening has been explored widely, realizations of the underscreened scenario - where only some of several Kondo channels participate in the screening - re…
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The Kondo effect is a cornerstone in the study of strongly correlated fermions. The coherent exchange coupling of conduction electrons to local magnetic moments gives rise to a Kondo cloud that screens the impurity spin. Whereas complete Kondo screening has been explored widely, realizations of the underscreened scenario - where only some of several Kondo channels participate in the screening - remain rare. Here we report the observation of fully screened and underscreened Kondo effects in quantum dots in bilayer graphene. More generally, we introduce a unique platform for studying Kondo physics. In contrast to carbon nanotubes, whose curved surfaces give rise to strong spin-orbit coupling breaking the SU(4) symmetry of the electronic states relevant for the Kondo effect, we study a nominally flat carbon material with small spin-orbit coupling. Moreover, the unusual two-electron triplet ground state in bilayer graphene dots provides a route to exploring the underscreened spin-1 Kondo effect.
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Submitted 8 March, 2021;
originally announced March 2021.
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Few-electron Single and Double Quantum Dots in an InAs Two-Dimensional Electron Gas
Authors:
Christopher Mittag,
Jonne V. Koski,
Matija Karalic,
Candice Thomas,
Aymeric Tuaz,
Anthony T. Hatke,
Geoffrey C. Gardner,
Michael J. Manfra,
Jeroen Danon,
Thomas Ihn,
Klaus Ensslin
Abstract:
Most proof-of-principle experiments for spin qubits have been performed using GaAs-based quantum dots because of the excellent control they offer over tunneling barriers and the orbital and spin degrees of freedom. Here, we present the first realization of high-quality single and double quantum dots hosted in an InAs two-dimensional electron gas (2DEG), demonstrating accurate control down to the f…
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Most proof-of-principle experiments for spin qubits have been performed using GaAs-based quantum dots because of the excellent control they offer over tunneling barriers and the orbital and spin degrees of freedom. Here, we present the first realization of high-quality single and double quantum dots hosted in an InAs two-dimensional electron gas (2DEG), demonstrating accurate control down to the few-electron regime, where we observe a clear Kondo effect and singlet-triplet spin blockade. We measure an electronic $g$-factor of $16$ and a typical magnitude of the random hyperfine fields on the dots of $\sim 0.6\, \mathrm{mT}$. We estimate the spin-orbit length in the system to be $\sim 5-10\, μ\mathrm{m}$, which is almost two orders of magnitude longer than typically measured in InAs nanostructures, achieved by a very symmetric design of the quantum well. These favorable properties put the InAs 2DEG on the map as a compelling host for studying fundamental aspects of spin qubits. Furthermore, having weak spin-orbit coupling in a material with a large Rashba coefficient potentially opens up avenues for engineering structures with spin-orbit coupling that can be controlled locally in space and/or time.
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Submitted 27 November, 2020;
originally announced November 2020.
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Gate-defined Quantum Point Contact in an InSb Two-dimensional Electron Gas
Authors:
Zi** Lei,
Christian A. Lehner,
Erik Cheah,
Christopher Mittag,
Matija Karalic,
Werner Wegscheider,
Klaus Ensslin,
Thomas Ihn
Abstract:
We investigate an electrostatically defined quantum point contact in a high-mobility InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and the subband structure of the quantum point contact is extracted from finite-bias measurements. The Zeeman splitting is measured in both in-plane and out-of-plane magnetic fields. We find an in-plane g factor…
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We investigate an electrostatically defined quantum point contact in a high-mobility InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and the subband structure of the quantum point contact is extracted from finite-bias measurements. The Zeeman splitting is measured in both in-plane and out-of-plane magnetic fields. We find an in-plane g factor $|g_{\parallel}^* | \approx$ 40. The out-of-plane g factor is measured to be $|g_{\perp}^* | \approx$ 50, which is close to the g factor in the bulk.
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Submitted 13 April, 2021; v1 submitted 5 November, 2020;
originally announced November 2020.
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Electronic g-factor and Magneto-transport in InSb Quantum Wells
Authors:
Zi** Lei,
Christian A. Lehner,
Km Rubi,
Erik Cheah,
Matija Karalic,
Christopher Mittag,
Luca Alt,
Jan Scharnetzky,
Peter Märki,
Uli Zeitler,
Werner Wegscheider,
Thomas Ihn,
Klaus Ensslin
Abstract:
High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov-de Haas oscillations and find a value for the effective g-factor of $\mid g^{\ast}\mid $ =35$\pm$4 and a value for the effective mass of…
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High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov-de Haas oscillations and find a value for the effective g-factor of $\mid g^{\ast}\mid $ =35$\pm$4 and a value for the effective mass of $m^*\approx0.017 m_0$, where $m_0$ is the electron mass in vacuum. Our measurements are performed in a magnetic field and a density range where the enhancement mechanism of the effective g-factor can be neglected. Accordingly, the obtained effective g-factor and the effective mass can be quantitatively explained in a single particle picture. Additionally, we explore the magneto-transport up to magnetic fields of 35 T and do not find features related to the fractional quantum Hall effect.
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Submitted 10 February, 2020;
originally announced February 2020.
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Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer
Authors:
Matija Karalic,
Antonio Štrkalj,
Michele Masseroni,
Wei Chen,
Christopher Mittag,
Thomas Tschirky,
Werner Wegscheider,
Thomas Ihn,
Klaus Ensslin,
Oded Zilberberg
Abstract:
Electron optics in the solid state promises new functionality in electronics through the possibility of realizing micrometer-sized interferometers, lenses, collimators and beam splitters that manipulate electrons instead of light. Until now, however, such functionality has been demonstrated exclusively in one-dimensional devices, such as in nanotubes, and in graphene-based devices operating with p…
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Electron optics in the solid state promises new functionality in electronics through the possibility of realizing micrometer-sized interferometers, lenses, collimators and beam splitters that manipulate electrons instead of light. Until now, however, such functionality has been demonstrated exclusively in one-dimensional devices, such as in nanotubes, and in graphene-based devices operating with p-n junctions. In this work, we describe a novel mechanism for realizing electron optics in two dimensions. By studying a two-dimensional Fabry-Pérot interferometer based on a resonant cavity formed in an InAs/GaSb double quantum well using p-n junctions, we establish that electron-hole hybridization in band-inverted systems can facilitate coherent interference. With this discovery, we expand the field of electron optics to encompass materials that exhibit band inversion and hybridization, with the promise to surpass the performance of current state-of-the-art devices.
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Submitted 1 November, 2019;
originally announced November 2019.
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A Gate-Defined Quantum Point Contact in an InAs Two-Dimensional Electron Gas
Authors:
Christopher Mittag,
Matija Karalic,
Zi** Lei,
Candice Thomas,
Aymeric Tuaz,
Anthony T. Hatke,
Geoffrey C. Gardner,
Michael J. Manfra,
Thomas Ihn,
Klaus Ensslin
Abstract:
We experimentally study quantized conductance in an electrostatically defined constriction in a high-mobility InAs two-dimensional electron gas. A parallel magnetic field lifts the spin degeneracy and allows for the observation of plateaus in integer multiples of $e^2/h$. Upon the application of a perpendicular magnetic field, spin-resolved magnetoelectric subbands are visible. Through finite bias…
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We experimentally study quantized conductance in an electrostatically defined constriction in a high-mobility InAs two-dimensional electron gas. A parallel magnetic field lifts the spin degeneracy and allows for the observation of plateaus in integer multiples of $e^2/h$. Upon the application of a perpendicular magnetic field, spin-resolved magnetoelectric subbands are visible. Through finite bias spectroscopy we measure the subband spacings in both parallel and perpendicular direction of the magnetic field and determine the $g$-factor.
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Submitted 2 August, 2019; v1 submitted 5 June, 2019;
originally announced June 2019.
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Quantum transport in high-quality shallow InSb quantum wells
Authors:
Zi** Lei,
Christian A. Lehner,
Erik Cheah,
Matija Karalic,
Christopher Mittag,
Luca Alt,
Jan Scharnetzky,
Werner Wegscheider,
Thomas Ihn,
Klaus Ensslin
Abstract:
InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong coupling between superconductors and semiconductors. However, it is still challenging to obtain a high-quality InSb two-dimensional electron gas in quantum wells clo…
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InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong coupling between superconductors and semiconductors. However, it is still challenging to obtain a high-quality InSb two-dimensional electron gas in quantum wells close to the surface. Here we report on a molecular beam epitaxy grown heterostructure of InSb quantum wells with substrate-side Si-do** and ultra-thin InAlSb (5 nm, 25 nm, and 50 nm) barriers to the surface. We demonstrate that the carrier densities in these quantum wells are gate-tunable and electron mobilities up to 350,000 $\rm{cm^2(Vs)^{-1}}$ are extracted from magneto-transport measurements. Furthermore, from temperature-dependent magneto-resistance measurements, we extract an effective mass of 0.02 $m_0$ and find a Zeeman splitting compatible with the expected g-factor.
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Submitted 25 June, 2019; v1 submitted 1 April, 2019;
originally announced April 2019.
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Gate-tunable Electronic Transport in p-type GaSb Quantum Wells
Authors:
Matija Karalic,
Christopher Mittag,
Michael Hug,
Kenji Shibata,
Thomas Tschirky,
Werner Wegscheider,
R. Winkler,
Klaus Ensslin,
Thomas Ihn
Abstract:
We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb unveil a significant spin splitting of the ground subband induced by spin-orbit coupling. We characterize the carrier densities, effective masses and quantum scattering times of these spin-split subbands and find that the…
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We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb unveil a significant spin splitting of the ground subband induced by spin-orbit coupling. We characterize the carrier densities, effective masses and quantum scattering times of these spin-split subbands and find that the results are in agreement with band structure calculations. Additionally, we study the weak anti-localization correction to the conductivity present around zero magnetic field and obtain information on the phase coherence. These results establish GaSb quantum wells as a platform for two-dimensional hole physics and lay the foundations for future experiments in this system.
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Submitted 28 March, 2019; v1 submitted 30 January, 2019;
originally announced January 2019.
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Phase Slips and Parity Jumps in Quantum Oscillations of Inverted InAs/GaSb Quantum Wells
Authors:
Matija Karalic,
Christopher Mittag,
Susanne Mueller,
Thomas Tschirky,
Werner Wegscheider,
Leonid Glazman,
Klaus Ensslin,
Thomas Ihn
Abstract:
We present magnetotransport measurements of a strongly hybridized inverted InAs/GaSb double quantum well. We find that the spin-orbit interaction leads to an appreciable spin-splitting of hole-like states, which form distinct Landau levels in a perpendicular magnetic field. The resulting quantum Hall state is governed by a periodic even and odd total filling arising due to the simultaneous occupat…
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We present magnetotransport measurements of a strongly hybridized inverted InAs/GaSb double quantum well. We find that the spin-orbit interaction leads to an appreciable spin-splitting of hole-like states, which form distinct Landau levels in a perpendicular magnetic field. The resulting quantum Hall state is governed by a periodic even and odd total filling arising due to the simultaneous occupation of electron-like and hole-like Landau levels of differing degeneracy. Furthermore, oscillatory charge transfer between all involved subbands leads to discrete phase slips in the usual sequential filling of Landau levels, and coincidentally the phase slips are close to $π$. These results shed new insights on the Landau level structure in composite systems and have consequences for interpreting intercepts obtained from index plots, which are routinely employed to investigate the presence of Berry's phase.
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Submitted 21 September, 2018;
originally announced September 2018.
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Edgeless and Purely Gate-Defined Nanostructures in InAs Quantum Wells
Authors:
Christopher Mittag,
Matija Karalic,
Zi** Lei,
Thomas Tschirky,
Werner Wegscheider,
Thomas Ihn,
Klaus Ensslin
Abstract:
Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching. This is due to parasitic parallel conduction arising from charge carrier accumulation at the physical edges of samples. Here we present a technique which enables the realization of quantum point contacts and quantum dots in two-dimensional electron gases of In…
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Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching. This is due to parasitic parallel conduction arising from charge carrier accumulation at the physical edges of samples. Here we present a technique which enables the realization of quantum point contacts and quantum dots in two-dimensional electron gases of InAs purely by electrostatic gating. Multiple layers of top gates separated by dielectric layers are employed. Full quantum point contact pinch-off and measurements of Coulomb-blockade diamonds of quantum dots are demonstrated.
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Submitted 7 September, 2018;
originally announced September 2018.
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Passivation of Edge States in Etched InAs Sidewalls
Authors:
Christopher Mittag,
Matija Karalic,
Susanne Müller,
Thomas Tschirky,
Werner Wegscheider,
Olga Nazarenko,
Maksym V. Kovalenko,
Thomas Ihn,
Klaus Ensslin
Abstract:
We investigate different methods of passivating sidewalls of wet etched InAs heterostructures in order to suppress inherent edge conduction that is presumed to occur due to band bending at the surface leading to charge carrier accumulation. Passivation techniques including sulfur, positively charged compensation dopants and plasma enhanced chemical vapor deposition of $\mathrm{SiN}_{\mathrm{x}}$ d…
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We investigate different methods of passivating sidewalls of wet etched InAs heterostructures in order to suppress inherent edge conduction that is presumed to occur due to band bending at the surface leading to charge carrier accumulation. Passivation techniques including sulfur, positively charged compensation dopants and plasma enhanced chemical vapor deposition of $\mathrm{SiN}_{\mathrm{x}}$ do not show an improvement. Surprisingly, atomic layer deposition of $\mathrm{Al}_{\mathrm{2}}\mathrm{O}_{\mathrm{3}}$ leads to an increase in edge resistivity of more than an order of magnitude. While the mechanism behind this change is not fully understood, possible reasons are suggested.
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Submitted 23 August, 2017; v1 submitted 6 June, 2017;
originally announced June 2017.
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Edge transport in InAs and InAs/GaSb quantum wells
Authors:
Susanne Mueller,
Christopher Mittag,
Thomas Tschirky,
Christophe Charpentier,
Werner Wegscheider,
Klaus Ensslin,
Thomas Ihn
Abstract:
We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Non-local measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum wells. The edge resistivity of 1-2 $\mathrm{kΩ/μm}$ is of the same order of magnitude as edge resistivities measured in the InAs/GaSb double quantum well system. M…
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We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Non-local measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum wells. The edge resistivity of 1-2 $\mathrm{kΩ/μm}$ is of the same order of magnitude as edge resistivities measured in the InAs/GaSb double quantum well system. Measurements in tilted magnetic field suggests an anisotropy of the conducting regions at the edges with a larger extent in the plane of the sample than normal to it. Finger gate samples on both material systems shine light on the length dependence of the edge resistance with the intent to unravel the nature of edge conduction in InAs/GaSb coupled quantum wells.
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Submitted 1 June, 2017;
originally announced June 2017.
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Lateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well
Authors:
Matija Karalic,
Christopher Mittag,
Thomas Tschirky,
Werner Wegscheider,
Klaus Ensslin,
Thomas Ihn
Abstract:
We present transport measurements on a lateral p-n junction in an inverted InAs/GaSb double quantum well at zero and nonzero perpendicular magnetic fields. At a zero magnetic field, the junction exhibits diodelike behavior in accordance with the presence of a hybridization gap. With an increasing magnetic field, we explore the quantum Hall regime where spin-polarized edge states with the same chir…
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We present transport measurements on a lateral p-n junction in an inverted InAs/GaSb double quantum well at zero and nonzero perpendicular magnetic fields. At a zero magnetic field, the junction exhibits diodelike behavior in accordance with the presence of a hybridization gap. With an increasing magnetic field, we explore the quantum Hall regime where spin-polarized edge states with the same chirality are either reflected or transmitted at the junction, whereas those of opposite chirality undergo a mixing process, leading to full equilibration along the width of the junction independent of spin. These results lay the foundations for using p-n junctions in InAs/GaSb double quantum wells to probe the transition between the topological quantum spin Hall and quantum Hall states.
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Submitted 21 May, 2017; v1 submitted 24 March, 2017;
originally announced March 2017.
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Experimental Signatures of the Inverted Phase in InAs/GaSb Coupled Quantum Wells
Authors:
Matija Karalic,
Susanne Mueller,
Christopher Mittag,
Kiryl Pakrouski,
QuanSheng Wu,
Alexey A. Soluyanov,
Matthias Troyer,
Thomas Tschirky,
Werner Wegscheider,
Klaus Ensslin,
Thomas Ihn
Abstract:
Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes coexist, and compare it with another sample in the non-inverted semiconducting regime. Activated behavior in conjunction with a strong suppression of the resistance…
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Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes coexist, and compare it with another sample in the non-inverted semiconducting regime. Activated behavior in conjunction with a strong suppression of the resistance peak at the charge neutrality point in a parallel magnetic field attest to the topological hybridization gap between electron and hole bands in the inverted sample. We observe an unconventional Landau level spectrum with energy gaps modulated by the magnetic field applied perpendicular to the quantum wells. This is caused by strong spin-orbit interaction provided jointly by the InAs and the GaSb quantum wells.
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Submitted 12 December, 2016; v1 submitted 11 June, 2016;
originally announced June 2016.
