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Energy Efficient Manufacturing Scheduling: A Systematic Literature Review
Authors:
Ahmed Missaoui,
Cemalettin Ozturk,
Barry O'Sullivan,
Michele Garraffa
Abstract:
The social context in relation to energy policies, energy supply, and sustainability concerns as well as advances in more energy-efficient technologies is driving a need for a change in the manufacturing sector. The main purpose of this work is to provide a research framework for energy-efficient scheduling (EES) which is a very active research area with more than 500 papers published in the last…
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The social context in relation to energy policies, energy supply, and sustainability concerns as well as advances in more energy-efficient technologies is driving a need for a change in the manufacturing sector. The main purpose of this work is to provide a research framework for energy-efficient scheduling (EES) which is a very active research area with more than 500 papers published in the last 10 years. The reason for this interest is mostly due to the economic and environmental impact of considering energy in production scheduling. In this paper, we present a systematic literature review of recent papers in this area, provide a classification of the problems studied, and present an overview of the main aspects and methodologies considered as well as open research challenges.
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Submitted 25 August, 2023;
originally announced August 2023.
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Comparing Machine Learning Techniques for Alfalfa Biomass Yield Prediction
Authors:
Jonathan Vance,
Khaled Rasheed,
Ali Missaoui,
Frederick Maier,
Christian Adkins,
Chris Whitmire
Abstract:
The alfalfa crop is globally important as livestock feed, so highly efficient planting and harvesting could benefit many industries, especially as the global climate changes and traditional methods become less accurate. Recent work using machine learning (ML) to predict yields for alfalfa and other crops has shown promise. Previous efforts used remote sensing, weather, planting, and soil data to t…
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The alfalfa crop is globally important as livestock feed, so highly efficient planting and harvesting could benefit many industries, especially as the global climate changes and traditional methods become less accurate. Recent work using machine learning (ML) to predict yields for alfalfa and other crops has shown promise. Previous efforts used remote sensing, weather, planting, and soil data to train machine learning models for yield prediction. However, while remote sensing works well, the models require large amounts of data and cannot make predictions until the harvesting season begins. Using weather and planting data from alfalfa variety trials in Kentucky and Georgia, our previous work compared feature selection techniques to find the best technique and best feature set. In this work, we trained a variety of machine learning models, using cross validation for hyperparameter optimization, to predict biomass yields, and we showed better accuracy than similar work that employed more complex techniques. Our best individual model was a random forest with a mean absolute error of 0.081 tons/acre and R{$^2$} of 0.941. Next, we expanded this dataset to include Wisconsin and Mississippi, and we repeated our experiments, obtaining a higher best R{$^2$} of 0.982 with a regression tree. We then isolated our testing datasets by state to explore this problem's eligibility for domain adaptation (DA), as we trained on multiple source states and tested on one target state. This Trivial DA (TDA) approach leaves plenty of room for improvement through exploring more complex DA techniques in forthcoming work.
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Submitted 20 October, 2022;
originally announced October 2022.
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Electronic transport properties and quantum localization effects monitored by selective functionalization in Bernal bilayer graphene
Authors:
Jouda Jemaa Khabthani,
Ahmed Missaoui,
Didier Mayou,
Guy Trambly de Laissardière
Abstract:
Monitoring electronic properties of 2D materials is an essential step to open a way for applications such as electronic devices and sensors. From this perspective, Bernal bilayer graphene (BLG) is a fairly simple system that offers great possibilities for tuning electronic gap and charge carriers' mobility by selective functionalization (adsorptions of atoms or molecules). Here, we present a detai…
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Monitoring electronic properties of 2D materials is an essential step to open a way for applications such as electronic devices and sensors. From this perspective, Bernal bilayer graphene (BLG) is a fairly simple system that offers great possibilities for tuning electronic gap and charge carriers' mobility by selective functionalization (adsorptions of atoms or molecules). Here, we present a detailed numerical study of BLG electronic properties when two types of adsorption site are present simultaneously. We focus on realistic cases that could be realized experimentally with adsorbate concentration c varying from 0.25% to 5%. For a given value of c, when the electronic do** is lower than c we show that quantum effects, which are ignored in usual semi-classical calculations, strongly affect the electronic structure and the transport properties. A wide range of behaviors is indeed found, such as gap opening, metallic behavior or abnormal conductivity, which depend on the adsorbate positions, the c value, the do**, and eventually the coupling between midgap states which can create a midgap band. These behaviors are understood by simple arguments based on the fact that BLG lattice is bipartite. We also analyze the conductivity at low temperature, where multiple scattering effects cannot be ignored. Moreover, when the Fermi energy lies in the band of midgap states, the average velocity of charge carriers cancels but conduction is still possible thanks to quantum fluctuations of the velocity.
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Submitted 16 December, 2021; v1 submitted 6 May, 2021;
originally announced May 2021.
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Magnetism of magic-angle twisted bilayer graphene
Authors:
Javad Vahedi,
Robert Peters,
Ahmed Missaoui,
Andreas Honecker,
Guy Trambly de Laissardière
Abstract:
We investigate magnetic instabilities in charge-neutral twisted bilayer graphene close to so-called "magic angles" using a combination of real-space Hartree-Fock and dynamical mean-field theories. In view of the large size of the unit cell close to magic angles, we examine a previously proposed rescaling that permits to mimic the same underlying flat minibands at larger twist angles. We find that…
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We investigate magnetic instabilities in charge-neutral twisted bilayer graphene close to so-called "magic angles" using a combination of real-space Hartree-Fock and dynamical mean-field theories. In view of the large size of the unit cell close to magic angles, we examine a previously proposed rescaling that permits to mimic the same underlying flat minibands at larger twist angles. We find that localized magnetic states emerge for values of the Coulomb interaction $U$ that are significantly smaller than what would be required to render an isolated layer antiferromagnetic. However, this effect is overestimated in the rescaled system, hinting at a complex interplay of flatness of the minibands close to the Fermi level and the spatial extent of the corresponding localized states. Our findings shed new light on perspectives for experimental realization of magnetic states in charge-neutral twisted bilayer graphene.
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Submitted 6 December, 2021; v1 submitted 21 April, 2021;
originally announced April 2021.
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Heterostrain rules the flat-bands in magic-angle twisted graphene layers
Authors:
F. Mesple,
A. Missaoui,
T. Cea,
L. Huder,
G. Trambly de Laissardière,
F. Guinea,
C. Chapelier,
V. T. Renard
Abstract:
The moiré of twisted graphene bilayers can generate flat bands in which charge carriers do not posses enough kinetic energy to escape Coulomb interactions with each other leading to the formation of novel strongly correlated electronic states. This exceptionally rich physics relies on the precise arrangement between the layers.We survey published Scanning Tunnelling Microscope (STM) measurements t…
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The moiré of twisted graphene bilayers can generate flat bands in which charge carriers do not posses enough kinetic energy to escape Coulomb interactions with each other leading to the formation of novel strongly correlated electronic states. This exceptionally rich physics relies on the precise arrangement between the layers.We survey published Scanning Tunnelling Microscope (STM) measurements to prove that near the magic angle, native heterostrain, the relative deformations between the layers, dominates twist in determining the flat bands. This is demonstrated at large do** where electronic correlations have a weak effect and where we also show that tip-induced strain can have a strong influence. In the opposite situation of low do**, we find that electronic correlation further normalize the flat bands in a way that strongly depends on experimental details.
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Submitted 4 December, 2020;
originally announced December 2020.
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Annihilation of Point Defect Pairs in Freely Suspended Liquid-Crystal Films
Authors:
Amine Missaoui,
Kirsten Harth,
Peter Salamon,
Ralf Stannarius
Abstract:
We study the annihilation of topological defect pairs in the quasi-twodimensional (2D) geometry of freely suspended smectic films. This elementary process is at the basis of all models describing the statistics of complex defect patterns. We prepare pairs with opposite topological charges and retrieve the interaction mechanisms from their trajectories. The square-root dependence of the defect sepa…
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We study the annihilation of topological defect pairs in the quasi-twodimensional (2D) geometry of freely suspended smectic films. This elementary process is at the basis of all models describing the statistics of complex defect patterns. We prepare pairs with opposite topological charges and retrieve the interaction mechanisms from their trajectories. The square-root dependence of the defect separation on the time until annihilation and the asymmetry in propagation velocities of the opponents predicted by theory are confirmed. The importance of defect orientations is demonstrated. Trajectories are in general curved, depending on the mutual orientations (phase mismatch) of the defects and on the orientation of the pair respective to the far, undisturbed director. The experiments provide the basis for an adaption of the theoretical models to the real complexity of the annihilation.
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Submitted 11 November, 2019;
originally announced November 2019.
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Two-dimensional electronic transport in rubrene: the impact of inter-chain coupling
Authors:
A. Missaoui,
J. J. Khabthani,
G. Trambly de Laissardiere,
D. Mayou
Abstract:
Organic semi-conductors have unique electronic properties and are important systems both at the fundamental level and also for their applications in electronic devices. In this article we focus on the particular case of rubrene which has one of the best electronic transport properties for application purposes. We show that this system can be well simulated by simple tight-binding systems represent…
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Organic semi-conductors have unique electronic properties and are important systems both at the fundamental level and also for their applications in electronic devices. In this article we focus on the particular case of rubrene which has one of the best electronic transport properties for application purposes. We show that this system can be well simulated by simple tight-binding systems representing one-dimensional (1D) chains that are weakly coupled to their neighboring chains in the same plane. This makes in principle this rubrene system somehow intermediate between 1D and isotropic 2D models. We analyse in detail the dc-transport and terahertz conductivity in the 1D and in the anisotropic 2D models. The transient localisation scenario allows us to reproduce satisfactorily some basics results such as mobility anisotropy and orders of magnitude as well as ac-conductivity in the terahertz range. This model shows in particular that even a weak inter-chain coupling is able to improve notably the propagation along the chains. This suggest also that a strong inter-chain coupling is important to get organic semi-conductors with the best possible transport properties for applicative purposes.
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Submitted 1 March, 2019; v1 submitted 21 February, 2019;
originally announced February 2019.
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Nanomechanical strain concentration on a 2D nanobridge within a large suspended bilayer graphene for molecular mass detection
Authors:
Julien Chaste,
Amine Missaoui,
Amina Saadani,
Daniel Garcia-Sanchez,
Debora Pierucci,
Zeineb Ben Aziza,
Abdelkarim Ouerghi
Abstract:
The recent emergence of strain gradient engineering directly affects the nanomechanics, optoelectronics and thermal transport fields in 2D materials. More specifically, large suspended graphene under very high stress represents the quintessence for nanomechanical mass detection through unique molecular reactions. Different techniques have been used to induce strain in 2D materials, for instance by…
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The recent emergence of strain gradient engineering directly affects the nanomechanics, optoelectronics and thermal transport fields in 2D materials. More specifically, large suspended graphene under very high stress represents the quintessence for nanomechanical mass detection through unique molecular reactions. Different techniques have been used to induce strain in 2D materials, for instance by applying tip indentation, pressure or substrate bending on a graphene membrane. Nevertheless, an efficient way to control the strain of a structure is to engineer the system geometry as shown in everyday life in architecture and acoustics. Similarly, we studied the concentration of strain in artificial nanoconstrictions (~100 nm) in a suspended epitaxial bilayer graphene membrane with different geometries and lengths ranging from 10 to 40 micrometer. We carefully isolated the strain signature from micro-Raman measurements and extracted information on a scale below the laser spot size by analyzing the broadened shape of our Raman peaks, up to 100 cm-1. We potentially measured a strong strain concentration in a nanoconstriction up to 5percent, which is 20 times larger than the native epitaxial graphene strain. Moreover, with a bilayer graphene, our configuration naturally enhanced the native asymmetric strain between the upper and lower graphene layers. In contrast to previous results, we can achieve any kind of complex strain tensor in graphene thanks to our structural approach. This method completes the previous strain-induced techniques and opens up new perspectives for bilayer graphene and 2D heterostructures based devices.
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Submitted 24 January, 2019;
originally announced January 2019.
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Intrinsic properties of suspended MoS2 on SiO2/Si pillar arrays for nanomechanics and optics
Authors:
Julien Chaste,
Amine Missaoui,
Si Huang,
Hugo Henck,
Zeineb Ben Aziza,
Laurence Ferlazzo,
Carl Naylor,
Adrian Balan,
Alan. T. Charlie Johnson Jr.,
Rémy Braive,
Abdelkarim Ouerghi
Abstract:
Semiconducting 2D materials, such as transition metal dichalcogenides (TMDs), are emerging in nanomechanics, optoelectronics, and thermal transport. In each of these fields, perfect control over 2D material properties including strain, do**, and heating is necessary, especially on the nanoscale. Here, we study clean devices consisting of membranes of single-layer MoS2 suspended on pillar arrays.…
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Semiconducting 2D materials, such as transition metal dichalcogenides (TMDs), are emerging in nanomechanics, optoelectronics, and thermal transport. In each of these fields, perfect control over 2D material properties including strain, do**, and heating is necessary, especially on the nanoscale. Here, we study clean devices consisting of membranes of single-layer MoS2 suspended on pillar arrays. Using Raman and photoluminescence spectroscopy, we have been able to extract, separate and simulate the different contributions on the nanoscale and to correlate these to the pillar array design. This control has been used to design a periodic MoS2 mechanical membrane with a high reproducibility and to perform optomechanical measurements on arrays of similar resonators with a high-quality factor of 600 at ambient temperature, hence opening the way to multi-resonator applications with 2D materials. At the same time, this study constitutes a reference for the future development of well-controlled optical emissions within 2D materials on periodic arrays with reproducible behavior. We measured a strong reduction of the MoS2 band-gap induced by the strain generated from the pillars. A transition from direct to indirect band gap was observed in isolated tent structures made of MoS2 and pinched by a pillar. In fully suspended devices, simulations were performed allowing both the extraction of the thermal conductance and do** of the layer. Using the correlation between the influences of strain and do** on the MoS2 Raman spectrum, we have developed a simple, elegant method to extract the local strain in suspended and non-suspended parts of a membrane. This opens the way to experimenting with tunable coupling between light emission and vibration.
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Submitted 6 June, 2018;
originally announced June 2018.
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Mobility gap and quantum transport in functionalized graphene bilayer
Authors:
Ahmed Missaoui,
Jouda Jemaa Khabthani,
Nejm-Eddine Jaidane,
Didier Mayou,
Guy Trambly de Laissardière
Abstract:
In a Bernal graphene bilayer, carbon atoms belong to two inequivalent sublattices A and B, with atoms that are coupled to the other layer by $p_σ$ bonds belonging to sublattice A and the other atoms belonging to sublattice B. We analyze the density of states and the conductivity of Bernal graphene bilayers when atoms of sublattice A or B only are randomly functionalized. We find that for a selecti…
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In a Bernal graphene bilayer, carbon atoms belong to two inequivalent sublattices A and B, with atoms that are coupled to the other layer by $p_σ$ bonds belonging to sublattice A and the other atoms belonging to sublattice B. We analyze the density of states and the conductivity of Bernal graphene bilayers when atoms of sublattice A or B only are randomly functionalized. We find that for a selective functionalization on sublattice B only, a mobility gap of the order of 0.5 eV is formed close to the Dirac energy at concentration of adatoms c > 0.01. In addition, at some other energies conductivity presents anomalous behaviors. We show that these properties are related to the bipartite structure of the graphene layer.
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Submitted 20 March, 2018; v1 submitted 1 December, 2017;
originally announced December 2017.
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Numerical analysis of electronic conductivity in graphene with resonant adsorbates: comparison of monolayer and Bernal bilayer
Authors:
Ahmed Missaoui,
Jouda Jemaa Khabthani,
Nejm-Eddine Jaidane,
Didier Mayou,
Guy Trambly de Laissardière
Abstract:
We describe the electronic conductivity, as a function of the Fermi energy, in the Bernal bilayer graphene (BLG) in presence of a random distribution of vacancies that simulate resonant adsorbates. We compare it to monolayer (MLG) with the same defect concentrations. These transport properties are related to the values of fundamental length scales such as the elastic mean free path $L_{e}$, the lo…
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We describe the electronic conductivity, as a function of the Fermi energy, in the Bernal bilayer graphene (BLG) in presence of a random distribution of vacancies that simulate resonant adsorbates. We compare it to monolayer (MLG) with the same defect concentrations. These transport properties are related to the values of fundamental length scales such as the elastic mean free path $L_{e}$, the localization length $ξ$ and the inelastic mean free path $L_{i}$. Usually the later, which reflect the effect of inelastic scattering by phonons, strongly depends on temperature $T$. In BLG an additional characteristic distance $l_1$ exists which is the typical traveling distance between two interlayer hop** events. We find that when the concentration of defects is smaller than 1\%--2\%, one has $l_1 \le L_e \ll ξ$ and the BLG has transport properties that differ from those of the MLG independently of $L_{i}(T)$. Whereas for larger concentration of defects $L_{e} < l_1 \ll ξ$, and depending on $L_{i}(T)$, the transport in the BLG can be equivalent (or not) to that of two decoupled MLG. We compare two tight-binding model Hamiltonians with and without hop** beyond the nearest neighbors.
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Submitted 27 January, 2017;
originally announced January 2017.
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Electronic structure and quantum transport in twisted bilayer graphene with resonant scatterers
Authors:
Omid Faizy Namarvar,
Ahmed Missaoui,
Laurence Magaud,
Didier Mayou,
Guy Trambly de Laissardière
Abstract:
Staking layered materials revealed to be a very powerful method to tailor their electronic properties. It has indeed been theoretically and experimentally shown that twisted bilayers of graphene (tBLG) with a rotation angle $θ$, forming Moiré pattern, confine electrons in a tunable way as a function of $θ$. Here, we study electronic structure and transport in tBLG using tight-binding numerical cal…
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Staking layered materials revealed to be a very powerful method to tailor their electronic properties. It has indeed been theoretically and experimentally shown that twisted bilayers of graphene (tBLG) with a rotation angle $θ$, forming Moiré pattern, confine electrons in a tunable way as a function of $θ$. Here, we study electronic structure and transport in tBLG using tight-binding numerical calculations in commensurate twisted bilayer structures and a pertubative continuous theory, which is valid for not too small angles ($θ> \sim 2^\circ $). This two approaches allow to understand the effect of $θ$ on the local density of states, the electron lifetime due to disorder, the dc-conducitivity and the quantum correction of the conductivity due to multiple scattering effects. We distinguished the cases where disorder is equaly distributed in the two layer or only in one layer. When only one layer is disordered, diffusion properties depends strongly on $θ$, showing thus the effect of Moiré electronic localisation at intermediate angles, $\sim 2^\circ < θ< \sim 20^\circ$.
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Submitted 3 June, 2020; v1 submitted 24 February, 2014;
originally announced February 2014.
