Showing 1–2 of 2 results for author: Misra, Y

InGaP $χ^{(2)}$ integrated photonics platform for broadband, ultra-efficient nonlinear conversion and entangled photon generation

Authors: Joshua Akin, Yunlei Zhao, Yuvraj Misra, A. K. M. Naziul Haque, Kejie Fang

Abstract: Nonlinear optics plays an important role in many areas of science and technology. The advance of nonlinear optics is empowered by the discovery and utilization of materials with growing optical nonlinearity. Here we demonstrate an indium gallium phosphide (InGaP) integrated photonics platform for broadband, ultra-efficient second-order nonlinear optics. The InGaP nanophotonic waveguide enables sec… ▽ More Nonlinear optics plays an important role in many areas of science and technology. The advance of nonlinear optics is empowered by the discovery and utilization of materials with growing optical nonlinearity. Here we demonstrate an indium gallium phosphide (InGaP) integrated photonics platform for broadband, ultra-efficient second-order nonlinear optics. The InGaP nanophotonic waveguide enables second-harmonic generation with a normalized efficiency of $128,000\%$/W/cm$^2$ at 1.55 $μ$m pump wavelength, nearly two orders of magnitude higher than the state of the art in the telecommunication C band. Further, we realize an ultra-bright, broadband time-energy entangled photon source with a pair generation rate of 97 GHz/mW and a bandwidth of 115 nm centered at the telecommunication C band. The InGaP entangled photon source shows high coincidence-to-accidental counts ratio CAR $>10^4$ and two-photon interference visibility $>98\%$. The InGaP second-order nonlinear photonics platform will have wide-ranging implications for non-classical light generation, optical signal processing, and quantum networking. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Modeling of High and Low Resistant States in Single Defect Atomristors

Authors: Yuvraj Misra, Tarun Kumar Agarwal

Abstract: Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a potential candidate for a universal memory as these non-volatile memory elements can offer fast-switching, long retention and switching cycles, and additionally, are a… ▽ More Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a potential candidate for a universal memory as these non-volatile memory elements can offer fast-switching, long retention and switching cycles, and additionally, are also suitable for direct applications in neuromorphic computing. In this study, we first present a model to analyze different resistance states of RRAM devices or so-called "atomristors" that utilize novel 2D materials as the switching materials instead of insulators. The developed model is then used to study the electrical characteristics of a single defect monolayer MoS$_{2}$ memristor. The change in the device resistance between the HRS and LRS is associated to the change in the tunneling probability when the vacancy defects in the 2D material are substituted by the metal atoms from the electrodes. The distortion due to defects and substituted metal atom is captured in the 1D potential energy profile by averaging the effect along the transverse direction. This simplification enables us to model single defect memristors with a less extensive quantum transport model while taking into account the presence of defects. △ Less

Submitted 11 June, 2022; originally announced June 2022.