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Non-equilibrium hot-carrier transport in type-II multiple-quantum wells for solar-cell applications
Authors:
H. P. Piyathilaka,
R. Sooriyagoda,
V. R. Whiteside,
T. D. Mishima,
M. B. Santos,
I. R. Sellers,
A. D. Bristow
Abstract:
Prototypes for hot-carrier solar cells based on type-II InAs/AlAsSb multiple quantum wells are examined for AC photoconductivity as a function of lattice temperature and photoexcitation energy to determine the photoexcited charge carrier transport. These samples previously exhibit an excitation energy onset of a metastable regime in their short time charge carrier dynamics that potentially improve…
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Prototypes for hot-carrier solar cells based on type-II InAs/AlAsSb multiple quantum wells are examined for AC photoconductivity as a function of lattice temperature and photoexcitation energy to determine the photoexcited charge carrier transport. These samples previously exhibit an excitation energy onset of a metastable regime in their short time charge carrier dynamics that potentially improves their applicability for hot-carrier photovoltaic applications. The transport results illustrate that the AC photoconductivity is larger in the dynamic regime corresponding to the metastability as a result of higher excitation photocarrier densities. In this excitation regime, the AC photoconductivity is accompanied by slightly lower carrier mobility, arising from the plasma-like nature of carriers scattered by Auger recombination. Outside of this regime, higher mobility is observed as a result of a lower excitation density that is more readily achievable by solar concentration. Additionally, at ambient temperatures, more scattering events are accompanied by slightly lower mobility, but the excitation dependence indicates that this is accompanied by an ambipolar diffusion length that is greater than half a micron. These transport properties are consistent with good quality inorganic elemental and III-V semiconductor solar cells and far exceed those of novel materials. The transport results complement the dynamics observed in type-II InAs/AlAsSb and can guide the design of hot-carrier solar cells based on these and related materials.
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Submitted 11 April, 2022; v1 submitted 29 December, 2021;
originally announced December 2021.
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Wigner solids of domain wall skyrmions
Authors:
Kaifeng Yang,
Katsumi Nagase,
Yoshiro Hirayama,
Tetsuya D. Mishima,
Michael B. Santos,
Hongwu Liu
Abstract:
Detection and characterization of a different type of topological excitations, namely the domain wall (DW) skyrmion, has received increasing attention because the DW is ubiquitous from condensed matter to particle physics and cosmology. Here we present experimental evidence for the DW skyrmion as the ground state stabilized by long-range Coulomb interactions in a quantum Hall ferromagnet. We devel…
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Detection and characterization of a different type of topological excitations, namely the domain wall (DW) skyrmion, has received increasing attention because the DW is ubiquitous from condensed matter to particle physics and cosmology. Here we present experimental evidence for the DW skyrmion as the ground state stabilized by long-range Coulomb interactions in a quantum Hall ferromagnet. We develop an alternative approach using nonlocal resistance measurements together with a local NMR probe to measure the effect of low-current-induced dynamic nuclear polarization and thus to characterize the DW under equilibrium conditions. The dependence of nuclear spin relaxation in the DW on temperature, filling factor, quasiparticle localization, and effective magnetic fields allows us to interpret this ground state and its possible phase transitions in terms of Wigner solids of the DW skyrmion. These results demonstrate the importance of studying the intrinsic properties of quantum states that has been largely overlooked.
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Submitted 15 October, 2021;
originally announced October 2021.
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Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells
Authors:
Herath P. Piyathilaka,
Rishmali Sooriyagoda,
Hamidreza Esmaielpour,
Vincent R. Whiteside,
Tetsuya D. Mishima,
Michael B. Santos,
Ian R. Sellers,
Alan D. Bristow
Abstract:
A type-II InAs/AlAs$_{0.16}$Sb$_{0.84}$ multiple-quantum well sample is investigated for the photoexcited carrier dynamics as a function of excitation photon energy and lattice temperature. Time-resolved measurements are performed using a near-infrared pump pulse, with photon energies near to and above the band gap, probed with a terahertz probe pulse. The transient terahertz absorption is charact…
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A type-II InAs/AlAs$_{0.16}$Sb$_{0.84}$ multiple-quantum well sample is investigated for the photoexcited carrier dynamics as a function of excitation photon energy and lattice temperature. Time-resolved measurements are performed using a near-infrared pump pulse, with photon energies near to and above the band gap, probed with a terahertz probe pulse. The transient terahertz absorption is characterized by a multi-rise, multi-decay function that captures long-lived decay times and a metastable state of for an excess-photon energy of $>100$ meV. For sufficient excess-photon energy, excitation of the metastable state is followed by a transition to the long-lived states. Excitation dependence of the long-lived states map onto a near-direct band gap ($E{_g}$) density of states with an Urbach tail below $E{_g}$. As temperature increases, the long-lived decay times increase $<E{_g}$, due to the increased phonon interaction of the unintentional defect states, and by phonon stabilization of the hot carriers $>E{_g}$. Additionally, Auger (and/or trap-assisted Auger) scattering above the onset of the plateau may also contribute to longer hot-carrier lifetimes. Meanwhile, the initial decay component shows strong dependence on excitation energy and temperature, reflecting the complicated initial transfer of energy between valence-band and defect states, indicating methods to further prolong hot carriers for technological applications.
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Submitted 14 March, 2021; v1 submitted 5 March, 2021;
originally announced March 2021.
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Pump-probe nuclear spin relaxation study of the quantum Hall ferromagnet at filling factor nu = 2
Authors:
K. F. Yang,
M. M. Uddin,
K. Nagase,
T. D. Mishima,
M. B. Santos,
Y. Hirayama,
Z. N. Yang,
H. W. Liu
Abstract:
The nuclear spin-lattice relaxation time T1 of the nu = 2 quantum Hall ferromagnet (QHF) formed in a gate-controlled InSb two-dimensional electron gas has been characterized using a pump-probe technique. In contrast to a long T1 of quantum Hall states around nu = 1 that possesses a Korringa-type temperature dependence, the temperature-independent short T1 of the nu = 2 QHF suggests the presence of…
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The nuclear spin-lattice relaxation time T1 of the nu = 2 quantum Hall ferromagnet (QHF) formed in a gate-controlled InSb two-dimensional electron gas has been characterized using a pump-probe technique. In contrast to a long T1 of quantum Hall states around nu = 1 that possesses a Korringa-type temperature dependence, the temperature-independent short T1 of the nu = 2 QHF suggests the presence of low energy collective spin excitations in a domain wall. Furthermore, T1 of this ferromagnetic state is also found to be filling- and current-independent. The interpretation of these results as compared to the T1 properties of other QHFs is discussed in terms of the domain wall skyrmion, which will lead to a better understanding of the QHF.
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Submitted 18 August, 2019; v1 submitted 18 March, 2019;
originally announced March 2019.
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In-Plane Magnetoconductance Map** of InSb Quantum Wells
Authors:
J. T. Mlack,
K. S. Wickramasinghe,
T. D. Mishima,
M. B. Santos,
C. M. Marcus
Abstract:
In-plane magnetoconductance of InSb quantum wells (QW) containing a two dimensional electron gas (2DEG) is presented. Using a vector magnet, we created a magnetoconductance map which shows the suppression of weak antilocalization (WAL) as a function of applied field. By fitting the in-plane field response of the 2DEG, we estimate material disorder and g-factor as a function of crystal direction. T…
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In-plane magnetoconductance of InSb quantum wells (QW) containing a two dimensional electron gas (2DEG) is presented. Using a vector magnet, we created a magnetoconductance map which shows the suppression of weak antilocalization (WAL) as a function of applied field. By fitting the in-plane field response of the 2DEG, we estimate material disorder and g-factor as a function of crystal direction. The in-plane WAL suppression is found to be dominated by the Zeeman effect and to show a small crystal-orientation-dependent anistropy in disorder and g-factor. These measurements show the utility of multi-directional measurement of magnetoconductance in analyzing material properties.
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Submitted 20 February, 2019;
originally announced February 2019.
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Role of chiral quantum Hall edge states in nuclear spin polarization
Authors:
K. F. Yang,
K. Nagase,
Y. Hirayama,
T. D. Mishima,
M. B. Santos,
H. W. Liu
Abstract:
Resistively detected NMR (RDNMR) based on dynamic nuclear polarization (DNP) in a quantum Hall ferromagnet (QHF) is a highly-sensitive method for the discovery of fascinating quantum Hall phases; however, the mechanism of this DNP and in particular the role of quantum Hall edge states in it are unclear. Here we demonstrate the important but previously unrecognized effect of chiral edge modes on th…
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Resistively detected NMR (RDNMR) based on dynamic nuclear polarization (DNP) in a quantum Hall ferromagnet (QHF) is a highly-sensitive method for the discovery of fascinating quantum Hall phases; however, the mechanism of this DNP and in particular the role of quantum Hall edge states in it are unclear. Here we demonstrate the important but previously unrecognized effect of chiral edge modes on the nuclear spin polarization. A side-by-side comparison of the RDNMR signals from Hall bar and Corbino disk configurations allows us to distinguish the contributions of bulk and edge states to DNP in QHF. The unidirectional current flow along chiral edge states makes the polarization robust to thermal fluctuations at high temperatures and makes it possible to observe a reciprocity principle of the RDNMR response. These findings help us better understand complex NMR responses in QHF, which has important implications for the development of RDNMR techniques.
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Submitted 22 April, 2017;
originally announced April 2017.
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Suppression of phonon-mediated hot carrier relaxation in type-II InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells: a practical route to hot carrier solar cells
Authors:
H. Esmaielpour,
V. R. Whiteside,
J. Tang,
S. Vijeyaragunathan,
T. D. Mishima,
S. Cairns,
M. B. Santos,
B. Wang,
I. R. Sellers
Abstract:
InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells are investigated for their potential as hot carrier solar cells. Continuous wave power and temperature dependent photoluminescence indicate a transition in the dominant hot carrier relaxation process from conventional phonon-mediated carrier relaxation below 90 K to a regime where inhibited radiative recombination dominates the hot carrier relaxation at elev…
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InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells are investigated for their potential as hot carrier solar cells. Continuous wave power and temperature dependent photoluminescence indicate a transition in the dominant hot carrier relaxation process from conventional phonon-mediated carrier relaxation below 90 K to a regime where inhibited radiative recombination dominates the hot carrier relaxation at elevated temperatures. At temperatures below 90 K photoluminescence measurements are consistent with type-I quantum wells that exhibit hole localization associated with alloy/interface fluctuations. At elevated temperatures hole delocalization reveals the true type-II band alignment; where it is observed that inhibited radiative recombination due to the spatial separation of the charge carriers dominates hot carrier relaxation. This decoupling of phonon-mediated relaxation results in robust hot carriers at higher temperatures even at lower excitation powers. These results indicate type-II quantum wells offer potential as practical hot carrier systems.
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Submitted 30 October, 2015;
originally announced November 2015.
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Gate depletion of an InSb two-dimensional electron gas
Authors:
M. M. Uddin,
H. W. Liu,
K. F. Yang,
K. Nagase,
K. Sekine,
C. K. Gaspe,
T. D. Mishima,
M. B. Santos,
Y. Hirayama
Abstract:
We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb compared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface…
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We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb compared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface layer. In contrast, a nonlinear, slow, and hysteretic (nonvolatile-memory-like) response was observed in the structure with an InSb surface layer. The 2DEG with the Al0.1In0.9Sb surface layer was completely depleted by application of a small gate voltage (-0.9 V).
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Submitted 18 September, 2013;
originally announced September 2013.
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Characterization of InSb quantum wells with atomic layer deposited gate dielectrics
Authors:
M. M. Uddin,
H. W. Liu,
K. F. Yang,
K. Nagase,
T. D. Mishima,
M. B. Santos,
Y. Hirayama
Abstract:
We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample at zero gate voltage (Vg). A good interface between Al2O3 and the top InSb layer ensures that the parallel channel is depleted at negative Vg and the density o…
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We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample at zero gate voltage (Vg). A good interface between Al2O3 and the top InSb layer ensures that the parallel channel is depleted at negative Vg and the density of two-dimensional electrons in the QW is tuned by Vg with a large ratio of 6.5x1014 m-2V-1 but saturates at large negative Vg. These findings are closely related to layer structures of the QW as suggested by self-consistent Schrodinger-Poisson simulation and two-carrier model.
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Submitted 6 December, 2012;
originally announced December 2012.
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Resistively detected nuclear magnetic resonance via a single InSb two-dimensional electron gas at high temperature
Authors:
K. F. Yang,
H. W. Liu,
K. Nagase,
T. D. Mishima,
M. B. Santos,
Y. Hirayama
Abstract:
We report on the demonstration of the resistively detected nuclear magnetic resonance (RDNMR) of a single InSb two-dimensional electron gas (2DEG) at elevated temperatures up to 4 K. The RDNMR signal of 115In in the simplest pseudospin quantum Hall ferromagnet triggered by a large direct current shows a peak-dip line shape, where the nuclear relaxation time T1 at the peak and the dip is different…
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We report on the demonstration of the resistively detected nuclear magnetic resonance (RDNMR) of a single InSb two-dimensional electron gas (2DEG) at elevated temperatures up to 4 K. The RDNMR signal of 115In in the simplest pseudospin quantum Hall ferromagnet triggered by a large direct current shows a peak-dip line shape, where the nuclear relaxation time T1 at the peak and the dip is different but almost temperature independent. The large Zeeman, cyclotron, and exchange energy scales of the InSb 2DEG contribute to the persistence of the RDNMR signal at high temperatures.
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Submitted 10 April, 2011;
originally announced April 2011.
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Nonlinear magnetic field dependence of spin polarization in high density two-dimensional electron systems
Authors:
K. F. Yang,
H. W. Liu,
T. D. Mishima,
M. B. Santos,
K. Nagase,
Y. Hirayama
Abstract:
The spin polarization (P) of high-density InSb two-dimensional electron systems (2DESs) has been measured using both parallel and tilted magnetic fields. P is found to exhibit a superlinear increase with the total field B. This P-B nonlinearity results in a difference in spin susceptibility between its real value Xs and Xgm ~ m*g*(m* and g* are the effective mass and g factor, respectively) as rou…
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The spin polarization (P) of high-density InSb two-dimensional electron systems (2DESs) has been measured using both parallel and tilted magnetic fields. P is found to exhibit a superlinear increase with the total field B. This P-B nonlinearity results in a difference in spin susceptibility between its real value Xs and Xgm ~ m*g*(m* and g* are the effective mass and g factor, respectively) as routinely used in experiments. We demonstrate that such a P-B nonlinearity originates from the linearly P-dependent g* due to the exchange coupling of electrons rather than from the electron correlation as predicted for the low-density 2DES.
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Submitted 17 August, 2011; v1 submitted 7 June, 2010;
originally announced June 2010.
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Dynamic Nuclear Polarization and Nuclear Magnetic Resonance in the Simplest Pseudospin Quantum Hall Ferromagnet
Authors:
H. W. Liu,
K. F. Yang,
T. D. Mishima,
M. B. Santos,
Y. Hirayama
Abstract:
We present dynamic nuclear polarization (DNP) in the simplest pseudospin quantum Hall ferromagnet (QHF) of an InSb two-dimensional electron gas with a large g factor using tilted magnetic fields. The DNP-induced amplitude change of a resistance spike of the QHF at large current enables observation of the resistively detected nuclear magnetic resonance of the high nuclear spin isotope 115In with ni…
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We present dynamic nuclear polarization (DNP) in the simplest pseudospin quantum Hall ferromagnet (QHF) of an InSb two-dimensional electron gas with a large g factor using tilted magnetic fields. The DNP-induced amplitude change of a resistance spike of the QHF at large current enables observation of the resistively detected nuclear magnetic resonance of the high nuclear spin isotope 115In with nine quadrupole splittings. Our results demonstrate the importance of domain structures in the DNP process. The nuclear spin relaxation time T1 in this QHF was relatively short (~ 120 s), and almost temperature independent.
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Submitted 24 December, 2010; v1 submitted 16 February, 2010;
originally announced February 2010.
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Dynamics of Photo-excited Spins in InSb Based Quantum Wells
Authors:
K. Nontapot,
R. N. Kini,
B. Spencer,
G. A. Khodaparast,
N. Goel,
S. J. Chung,
T. D. Mishima,
M. B. Santos
Abstract:
We report time resolved measurements of spin relaxation in doped and undoped InSb quantum wells using degenerate and two-color magneto-optical Kerr effect techniques. We observed that the photo-excited spin dynamics are strongly influenced by laser excitation fluence and the do** profile of the samples. In the low fluence regime, an oscillatory pattern was observed at low temperatures ($\leq$…
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We report time resolved measurements of spin relaxation in doped and undoped InSb quantum wells using degenerate and two-color magneto-optical Kerr effect techniques. We observed that the photo-excited spin dynamics are strongly influenced by laser excitation fluence and the do** profile of the samples. In the low fluence regime, an oscillatory pattern was observed at low temperatures ($\leq$ 77 K) in the samples with an asymmetric do** profile which might be attributed to the quasi-collision-free spin relaxation regime. Our measurements also suggest the influence of the barrier materials (Al$_{x}$In$_{1-x}$Sb) on the spin relaxation in these material systems.
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Submitted 16 July, 2008;
originally announced July 2008.
