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Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot
Authors:
S. D. Liles,
F. Martins,
D. S. Miserev,
A. A. Kiselev,
I. D. Thorvaldson,
M. J. Rendell,
I. K. **,
F. E. Hudson,
M. Veldhorst,
K. M. Itoh,
O. P. Sushkov,
T. D. Ladd,
A. S. Dzurak,
A. R. Hamilton
Abstract:
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole spin states. Here, we study the underlying hole spin physics of the first hole in a silicon planar MOS quantum dot. We sh…
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Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole spin states. Here, we study the underlying hole spin physics of the first hole in a silicon planar MOS quantum dot. We show that non-uniform electrode-induced strain produces nanometre-scale variations in the HH-LH splitting. Importantly, we find that this \RR{non-uniform strain causes} the HH-LH splitting to vary by up to 50\% across the active region of the quantum dot. We show that local electric fields can be used to displace the hole relative to the non-uniform strain profile, allowing a new mechanism for electric modulation of the hole g-tensor. Using this mechanism we demonstrate tuning of the hole $g$-factor by up to 500\%. In addition, we observe a \RR{potential} sweet spot where d$g_{(1\overline{1}0)}$/d$V$ = 0, offering a configuration to suppress spin decoherence caused by electrical noise. These results open a path towards a previously unexplored technology: engineering of \RR{non-uniform} strains to optimise spin-based devices.
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Submitted 20 December, 2021; v1 submitted 9 December, 2020;
originally announced December 2020.
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Detection and control of spin-orbit interactions in a GaAs hole quantum point contact
Authors:
A. Srinivasan,
D. S. Miserev,
K. L. Hudson,
O. Klochan,
K. Muraki,
Y. Hirayama,
D. Reuter,
A. D. Wieck,
O. P. Sushkov,
A. R. Hamilton
Abstract:
We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing and anti-crossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anti-crossing energy gap dep…
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We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing and anti-crossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anti-crossing energy gap depends on the interplay between the SOI terms and the highly anisotropic hole g tensor, and that this interplay can be tuned by selecting the crystal axis along which the current and magnetic field are aligned. Our results constitute independent detection and control of the Dresselhaus and Rashba SOIs in hole systems, which could be of importance for spintronics and quantum information applications.
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Submitted 12 March, 2017;
originally announced March 2017.
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Electrical control of the sign of the g-factor in a GaAs hole quantum point contact
Authors:
A. Srinivasan,
K. L. Hudson,
D. S. Miserev,
L. A. Yeoh,
O. Klochan,
K. Muraki,
Y. Hirayama,
O. P. Sushkov,
A. R. Hamilton
Abstract:
Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually determine the sign. Here we use a combination of tilted fields and a unique off-diagonal element in the hole g-tensor to directly detect the sign of g*. We are able to…
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Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually determine the sign. Here we use a combination of tilted fields and a unique off-diagonal element in the hole g-tensor to directly detect the sign of g*. We are able to tune not only the magnitude, but also the sign of the g-factor by electrical means, which is of interest for spintronics applications. Furthermore, we show theoretically that the resulting behavior of g* can be explained by the momentum dependence of the spin-orbit interaction.
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Submitted 26 February, 2017;
originally announced February 2017.
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Mechanisms for strong anisotropy of in-plane g-factors in hole based quantum point contacts
Authors:
D. S. Miserev,
A. Srinivasan,
O. A. Tkachenko,
V. A. Tkachenko,
I. Farrer,
D. A. Ritchie,
A. R. Hamilton,
O. P. Sushkov
Abstract:
In-plane hole g-factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contri…
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In-plane hole g-factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contributing to the effect and develop the theory which describes it successfully. We show that there is a new mechanism for the anisotropy related to the existence of an additional $B_+k_-^4σ_+$ effective Zeeman interaction for holes, which is kinematically different from the standard single Zeeman term $B_-k_-^2σ_+$ considered until now.
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Submitted 13 September, 2017; v1 submitted 2 December, 2016;
originally announced December 2016.
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Dimensional reduction of the Luttinger Hamiltonian and g-factors of holes in symmetric two-dimensional semiconductor heterostructures
Authors:
D. S. Miserev,
O. P. Sushkov
Abstract:
The spin-orbit interaction of holes in zinc-blende semiconductors is much stronger than that of electrons. This makes the hole systems very attractive for possible spintronics applications. In three dimensions (3D) dynamics of holes is described by well known Luttinger Hamiltonian. However, most of recent spintronics applications are related to two dimensional heterostructures where dynamics in on…
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The spin-orbit interaction of holes in zinc-blende semiconductors is much stronger than that of electrons. This makes the hole systems very attractive for possible spintronics applications. In three dimensions (3D) dynamics of holes is described by well known Luttinger Hamiltonian. However, most of recent spintronics applications are related to two dimensional heterostructures where dynamics in one direction is frozen due to quantum confinement. The confinement results in dimensional reduction of the Luttinger Hamiltonian, 3D ->2D. Due to interplay of the spin-orbit interaction, the external magnetic field, and the lateral gate potential imposed on the heterostructure the reduction is highly nontrivial and not known. In the present work we perform the reduction and hence derive the general effective Hamiltonian which describes spintronics effects in symmetric two-dimensional (2D) heterostructures. In particular, we do the following, (i) derive the spin-orbit interaction and the Darwin interaction related to the lateral gate potential, (ii) determine the momentum dependent out-of-plane g-factor, (iii) point out that there are two independent in-plane g-factors, (iv) determine momentum dependencies of the in-plane g-factors.
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Submitted 10 October, 2016;
originally announced October 2016.
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G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors
Authors:
D. S. Miserev,
O. P. Sushkov
Abstract:
Holes in cubic semiconductors have effective spin 3/2 and very strong spin orbit interaction. Due to these factors properties of hole bound states are highly unusual. We consider a single hole bound by a spherically symmetric potential, this can be an acceptor or a spherically symmetric quantum dot. Linear response to an external magnetic field is characterized by the bound state Lande g-factor. W…
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Holes in cubic semiconductors have effective spin 3/2 and very strong spin orbit interaction. Due to these factors properties of hole bound states are highly unusual. We consider a single hole bound by a spherically symmetric potential, this can be an acceptor or a spherically symmetric quantum dot. Linear response to an external magnetic field is characterized by the bound state Lande g-factor. We calculate analytically g-factors of all bound states.
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Submitted 25 August, 2015;
originally announced August 2015.
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Analytical study of bound states in graphene nano-ribbons and carbon nanotubes: The variable phase method and the relativistic Levinson theorem
Authors:
D. S. Miserev
Abstract:
The problem of localized states in 1D systems with the relativistic spectrum, namely, graphene stripes and carbon nanotubes, has been analytically studied. The bound state as a superposition of two chiral states is completely described by their relative phase which is the foundation of the variable phase method (VPM) developed herein. Basing on our VPM, we formulate and prove the relativistic Levi…
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The problem of localized states in 1D systems with the relativistic spectrum, namely, graphene stripes and carbon nanotubes, has been analytically studied. The bound state as a superposition of two chiral states is completely described by their relative phase which is the foundation of the variable phase method (VPM) developed herein. Basing on our VPM, we formulate and prove the relativistic Levinson theorem. The problem of bound state can be reduced to the analysis of closed trajectories of some vector field. Remarkably, the Levinson theorem appears as the Poincare indices theorem for these closed trajectories. The reduction of the VPM equation to the non-relativistic and semi-classical limits has been done. The limit of the small momentum $p_y$ of the transverse quantization is applicable to arbitrary integrable potential. In this case the only confined mode is predicted.
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Submitted 14 March, 2016; v1 submitted 24 August, 2014;
originally announced August 2014.
