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Microscopic Mechanism of Pair-, Charge- and Spin-Density-Wave Instabilities in Interacting D-Dimensional Fermi Liquids
Authors:
Dmitry Miserev,
Herbert Schoeller,
Jelena Klinovaja,
Daniel Loss
Abstract:
We present an analytic theory unraveling the microscopic mechanism of instabilities within interacting $D$-dimensional Fermi liquid. Our model consists of a $D$-dimensional electron gas subject to an instantaneous electron-electron interaction of a finite range exceeding the average inter-particle distance. Pair, charge and spin susceptibilities are evaluated via the one-loop renormalization group…
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We present an analytic theory unraveling the microscopic mechanism of instabilities within interacting $D$-dimensional Fermi liquid. Our model consists of a $D$-dimensional electron gas subject to an instantaneous electron-electron interaction of a finite range exceeding the average inter-particle distance. Pair, charge and spin susceptibilities are evaluated via the one-loop renormalization group theory and via the bosonization approach, giving identical results. In case of a repulsive interaction, we identify an intrinsic Fermi liquid instability towards insulating spin/charge density wave order when the interaction coupling strength reaches a universal critical value. If both electron and hole pockets of the same size are present, the ground state is an excitonic insulator at arbitrarily small repulsive interaction. If the interaction is attractive, the ground state is a singlet non-BCS superconductor with a uniform condensate. In case if both electron and hole Fermi surfaces are present, we predict an instability towards the inter-pocket pair-density-wave ordering at the critical coupling. This prediction lends strong theoretical support to the pair-density-wave scenario of superconductivity in cuprate materials. Due to its simple and universal nature, presented microscopic mechanism of intrinsic instabilities of interacting $D$-dimensional Fermi liquids constitutes a solid theoretical ground for understanding quantum phase transitions in a variety of quantum materials, from ultraclean semiconductor quantum wells to high-temperature superconductors.
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Submitted 27 March, 2024; v1 submitted 28 December, 2023;
originally announced December 2023.
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Exchange energy of the ferromagnetic electronic ground-state in a monolayer semiconductor
Authors:
Nadine Leisgang,
Dmitry Miserev,
Hinrich Mattiat,
Lukas Schneider,
Lukas Sponfeldner,
Kenji Watanabe,
Takashi Taniguchi,
Martino Poggio,
Richard J. Warburton
Abstract:
Mobile electrons in the semiconductor monolayer-MoS$_2$ form a ferromagnetic state at low temperature. The Fermi sea consists of two circles, one at the $K$-point, the other at the $\tilde{K}$-point, both with the same spin. Here, we present an optical experiment on gated MoS$_2$ at low electron-density in which excitons are injected with known spin and valley quantum numbers. The resulting trions…
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Mobile electrons in the semiconductor monolayer-MoS$_2$ form a ferromagnetic state at low temperature. The Fermi sea consists of two circles, one at the $K$-point, the other at the $\tilde{K}$-point, both with the same spin. Here, we present an optical experiment on gated MoS$_2$ at low electron-density in which excitons are injected with known spin and valley quantum numbers. The resulting trions are identified using a model which accounts for the injection process, the formation of antisymmetrized trion states, electron-hole scattering from one valley to the other, and recombination. The results are consistent with a complete spin polarization. From the splittings between different trion states, we measure the exchange energy, $Σ$, the energy required to flip a single spin within the ferromagnetic state, as well as the intervalley Coulomb exchange energy, $J$. We determine $Σ=11.2\,$meV and $J=5\,$meV at $n=1.5 \times 10^{12}\,$cm$^{-2}$, and find that $J$ depends strongly on the electron density, $n$.
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Submitted 3 November, 2023;
originally announced November 2023.
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Quantum phase transitions and cat states in cavity-coupled quantum dots
Authors:
Valerii K. Kozin,
Dmitry Miserev,
Daniel Loss,
Jelena Klinovaja
Abstract:
We study double quantum dots coupled to a quasistatic cavity mode with high mode-volume compression allowing for strong light-matter coupling. Besides the cavity-mediated interaction, electrons in different double quantum dots interact with each other via dipole-dipole (Coulomb) interaction. For attractive dipolar interaction, a cavity-induced ferroelectric quantum phase transition emerges leading…
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We study double quantum dots coupled to a quasistatic cavity mode with high mode-volume compression allowing for strong light-matter coupling. Besides the cavity-mediated interaction, electrons in different double quantum dots interact with each other via dipole-dipole (Coulomb) interaction. For attractive dipolar interaction, a cavity-induced ferroelectric quantum phase transition emerges leading to ordered dipole moments. Surprisingly, we find that the phase transition can be either continuous or discontinuous, depending on the ratio between the strengths of cavity-mediated and Coulomb interactions. We show that, in the strong coupling regime, both the ground and the first excited states of an array of double quantum dots are squeezed Schrödinger cat states. Such states are actively discussed as high-fidelity qubits for quantum computing, and thus our proposal provides a platform for semiconductor implementation of such qubits. We also calculate gauge-invariant observables such as the net dipole moment, the optical conductivity, and the absorption spectrum beyond the semiclassical approximation.
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Submitted 23 October, 2023;
originally announced October 2023.
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Spin susceptibility in interacting two-dimensional semiconductors and bilayer systems at first order: Kohn anomalies and spin density wave ordering
Authors:
Joel Hutchinson,
Dmitry Miserev,
Jelena Klinovaja,
Daniel Loss
Abstract:
This work is an analytic theoretical study of a 2D semiconductor with a Fermi surface that is split by the Zeeman coupling of electron spins to an external magnetic field in the presence of electron-electron interactions. For the first time, we calculate the spin susceptibility for long-range and finite-range interactions diagrammatically, and find a resonant peak structure at the Kohn anomaly alr…
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This work is an analytic theoretical study of a 2D semiconductor with a Fermi surface that is split by the Zeeman coupling of electron spins to an external magnetic field in the presence of electron-electron interactions. For the first time, we calculate the spin susceptibility for long-range and finite-range interactions diagrammatically, and find a resonant peak structure at the Kohn anomaly already in first-order perturbation theory. In contrast to the density-density correlator that is suppressed due to the large electrostatic energy required to stabilize charge density order, the spin susceptibility does not suffer from electrostatic screening effects, thus favouring spin-density-wave order in 2D semiconductors. Our results impose significant consequences for determining magnetic phases in 2D semiconductors. For example, a strongly enhanced Kohn anomaly may result in helical ordering of magnetic impurities due to the RKKY interaction. Furthermore, the spin degree of freedom can equally represent a layer pseudospin in the case of bilayer materials. In this case, the external "magnetic field" is a combination of layer bias and interlayer hop**. The sharp peak of the 2D static spin susceptibility may then be responsible for dipole-density-wave order in bilayer materials at large enough electron-phonon coupling.
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Submitted 9 October, 2023;
originally announced October 2023.
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Dimensional reduction of the Luttinger-Ward functional for spin-degenerate $D$-dimensional electron gases
Authors:
D. Miserev,
J. Klinovaja,
D. Loss
Abstract:
We consider an isotropic spin-degenerate interacting uniform $D$-dimensional electron gas (DDEG) with $D > 1$ within the Luttinger-Ward (LW) formalism. We derive the asymptotically exact semiclassical/infrared limit of the LW functional at large distances, $r \gg λ_F$, and large times, $τ\gg 1/E_F$, where $λ_F$ and $E_F$ are the Fermi wavelength and the Fermi energy, respectively. The LW functiona…
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We consider an isotropic spin-degenerate interacting uniform $D$-dimensional electron gas (DDEG) with $D > 1$ within the Luttinger-Ward (LW) formalism. We derive the asymptotically exact semiclassical/infrared limit of the LW functional at large distances, $r \gg λ_F$, and large times, $τ\gg 1/E_F$, where $λ_F$ and $E_F$ are the Fermi wavelength and the Fermi energy, respectively. The LW functional is represented by skeleton diagrams, each skeleton diagram consists of appropriately connected dressed fermion loops. First, we prove that every $D$-dimensional skeleton diagram consisting of a single fermion loop is reduced to a one-dimensional (1D) fermion loop with the same diagrammatic structure, which justifies the name dimensional reduction. This statement, combined with the fermion loop cancellation theorem (FLCT), agrees with results of multidimensional bosonization. Here we show that the backscattering and the spectral curvature, both explicitly violate the FLCT and both are irrelevant for a 1DEG, become relevant at $D > 1$ and $D > 2$, respectively. The reason for this is a strong infrared divergence of the skeleton diagrams containing multiple fermion loops at $D > 1$. These diagrams, which are omitted within the multidimensional bosonization approaches, account for the non-collinear scattering processes. Thus, the dimensional reduction provides the framework to go beyond predictions of the multidimensional bosonization. A simple diagrammatic structure of the reduced LW functional is another advantage of our approach. The dimensional reduction technique is also applicable to the thermodynamic potential and various approximations, from perturbation theory to self-consistent approaches.
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Submitted 29 March, 2023;
originally announced March 2023.
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Observation of oscillating $g$-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts
Authors:
Karina Hudson,
Ashwin Srinivasan,
Dmitry Miserev,
Qingwen Wang,
Oleh Klochan,
Oleg Sushkov,
Ian Farrer,
David Ritchie,
Alex Hamilton
Abstract:
Many modern spin-based devices rely on the spin-orbit interaction, which is highly sensitive to the host semiconductor heterostructure and varies substantially depending on crystal direction, crystal asymmetry (Dresselhaus), and quantum confinement asymmetry (Rashba). One-dimensional quantum point contacts are a powerful tool to probe both energy and directional dependence of spin-orbit interactio…
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Many modern spin-based devices rely on the spin-orbit interaction, which is highly sensitive to the host semiconductor heterostructure and varies substantially depending on crystal direction, crystal asymmetry (Dresselhaus), and quantum confinement asymmetry (Rashba). One-dimensional quantum point contacts are a powerful tool to probe both energy and directional dependence of spin-orbit interaction through the effect on the hole $g$-factor. In this work we investigate the role of cubic crystal asymmetry in driving an oscillation in the in-plane hole $g$-factor anisotropy when the quantum point contact is rotated with respect to the crystal axes, and we are able to separate contributions to the Zeeman Hamiltonian arising from Rashba and cubic crystal asymmetry spin-orbit interactions. The in-plane $g$-factor is found to be extremely sensitive to the orientation of the quantum point contact, changing by a factor of $5$ when rotated by $45^{\circ}$. This exceptionally strong crystal lattice anisotropy of the in-plane Zeeman splitting cannot be explained within axially symmetric theoretical models. Theoretical modelling based on the combined Luttinger, Rashba and Dresselhaus Hamiltonians that we use here reveals new spin-orbit contributions to the in-plane hole $g$-factor and provides an excellent agreement with our experimental data.
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Submitted 7 November, 2022; v1 submitted 31 October, 2022;
originally announced November 2022.
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RKKY interaction at helical edges of topological superconductors
Authors:
Katharina Laubscher,
Dmitry Miserev,
Vardan Kaladzhyan,
Daniel Loss,
Jelena Klinovaja
Abstract:
We study spin configurations of classical magnetic impurities placed close to the edge of a two-dimensional topological superconductor both analytically and numerically. First, we demonstrate that the spin of a single magnetic impurity close to the edge of a topological superconductor tends to align along the edge. The strong easy-axis spin anisotropy behind this effect originates from the interac…
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We study spin configurations of classical magnetic impurities placed close to the edge of a two-dimensional topological superconductor both analytically and numerically. First, we demonstrate that the spin of a single magnetic impurity close to the edge of a topological superconductor tends to align along the edge. The strong easy-axis spin anisotropy behind this effect originates from the interaction between the impurity and the gapless helical Majorana edge states. We then compute the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between two magnetic impurities placed close to the edge. We show that, in the limit of large interimpurity distances, the RKKY interaction between the two impurities is mainly mediated by the Majorana edge states and leads to a ferromagnetic alignment of both spins along the edge. This effect could be used to detect helical Majorana edge states.
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Submitted 15 April, 2023; v1 submitted 15 March, 2022;
originally announced March 2022.
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Instability of the ferromagnetic quantum critical point in strongly interacting 2D and 3D electron gases with arbitrary spin-orbit splitting
Authors:
Dmitry Miserev,
Daniel Loss,
Jelena Klinovaja
Abstract:
In this work we revisit itinerant ferromagnetism in 2D and 3D electron gases with arbitrary spin-orbit splitting and strong electron-electron interaction. We identify the resonant scattering processes close to the Fermi surface that are responsible for the instability of the ferromagnetic quantum critical point at low temperatures. In contrast to previous theoretical studies, we show that such pro…
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In this work we revisit itinerant ferromagnetism in 2D and 3D electron gases with arbitrary spin-orbit splitting and strong electron-electron interaction. We identify the resonant scattering processes close to the Fermi surface that are responsible for the instability of the ferromagnetic quantum critical point at low temperatures. In contrast to previous theoretical studies, we show that such processes cannot be fully suppressed even in presence of arbitrary spin-orbit splitting. A fully self-consistent non-perturbative treatment of the electron-electron interaction close to the phase transition shows that these resonant processes always destabilize the ferromagnetic quantum critical point and lead to a first-order phase transition. Characteristic signatures of these processes can be measured via the non-analytic dependence of the spin susceptibility on magnetic field both far away or close to the phase transition.
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Submitted 26 January, 2022;
originally announced January 2022.
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Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot
Authors:
S. D. Liles,
F. Martins,
D. S. Miserev,
A. A. Kiselev,
I. D. Thorvaldson,
M. J. Rendell,
I. K. **,
F. E. Hudson,
M. Veldhorst,
K. M. Itoh,
O. P. Sushkov,
T. D. Ladd,
A. S. Dzurak,
A. R. Hamilton
Abstract:
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole spin states. Here, we study the underlying hole spin physics of the first hole in a silicon planar MOS quantum dot. We sh…
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Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole spin states. Here, we study the underlying hole spin physics of the first hole in a silicon planar MOS quantum dot. We show that non-uniform electrode-induced strain produces nanometre-scale variations in the HH-LH splitting. Importantly, we find that this \RR{non-uniform strain causes} the HH-LH splitting to vary by up to 50\% across the active region of the quantum dot. We show that local electric fields can be used to displace the hole relative to the non-uniform strain profile, allowing a new mechanism for electric modulation of the hole g-tensor. Using this mechanism we demonstrate tuning of the hole $g$-factor by up to 500\%. In addition, we observe a \RR{potential} sweet spot where d$g_{(1\overline{1}0)}$/d$V$ = 0, offering a configuration to suppress spin decoherence caused by electrical noise. These results open a path towards a previously unexplored technology: engineering of \RR{non-uniform} strains to optimise spin-based devices.
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Submitted 20 December, 2021; v1 submitted 9 December, 2020;
originally announced December 2020.
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Magnetic phase transitions in two-dimensional two-valley semiconductors with in-plane magnetic field
Authors:
Dmitry Miserev,
Jelena Klinovaja,
Daniel Loss
Abstract:
A two-dimensional electron gas (2DEG) in two-valley semiconductors has two discrete degrees of freedom given by the spin and valley quantum numbers. We analyze the zero-temperature magnetic instabilities of two-valley semiconductors with SOI, in-plane magnetic field, and electron-electron interaction. The interplay of an applied in-plane magnetic field and the SOI results in non-collinear spin qua…
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A two-dimensional electron gas (2DEG) in two-valley semiconductors has two discrete degrees of freedom given by the spin and valley quantum numbers. We analyze the zero-temperature magnetic instabilities of two-valley semiconductors with SOI, in-plane magnetic field, and electron-electron interaction. The interplay of an applied in-plane magnetic field and the SOI results in non-collinear spin quantization in different valleys. Together with the exchange intervalley interaction this results in a rich phase diagram containing four non-trivial magnetic phases. The negative non-analytic cubic correction to the free energy, which is always present in an interacting 2DEG, is responsible for first order phase transitions. Here, we show that non-zero ground state values of the order parameters can cut this cubic non-analyticity and drive certain magnetic phase transitions second order. We also find two tri-critical points at zero temperature which together with the line of second order phase transitions constitute the quantum critical sector of the phase diagram. The phase transitions can be tuned externally by electrostatic gates or by the in-plane magnetic field.
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Submitted 17 August, 2020;
originally announced August 2020.
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Fermi Surface Resonance and Quantum Criticality in Strongly Interacting Fermi Gases
Authors:
Dmitry Miserev,
Jelena Klinovaja,
Daniel Loss
Abstract:
Fermions in the Fermi gas obey the Pauli exclusion principle restricting any two fermions from filling the same quantum state. Strong interaction between fermions can completely change the properties of the Fermi gas. In our theoretical study we find a new exotic quantum phase in strongly interacting Fermi gases constrained to a certain condition imposed on the Fermi surfaces which we call the Fer…
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Fermions in the Fermi gas obey the Pauli exclusion principle restricting any two fermions from filling the same quantum state. Strong interaction between fermions can completely change the properties of the Fermi gas. In our theoretical study we find a new exotic quantum phase in strongly interacting Fermi gases constrained to a certain condition imposed on the Fermi surfaces which we call the Fermi surface resonance. The new phase is quantum critical which can be identified by the power-law frequency tail of the spectral density and divergent static susceptibilities. An especially striking feature of the new phase is the anomalous power-law temperature dependence of the dc resistivity that is similar to strange metals. The new quantum critical phase can be experimentally found in ordinary semiconductor heterostructures.
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Submitted 1 December, 2020; v1 submitted 9 July, 2020;
originally announced July 2020.
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First-order magnetic phase-transition of mobile electrons in monolayer MoS$_2$
Authors:
Jonas Gaël Roch,
Dmitry Miserev,
Guillaume Froehlicher,
Nadine Leisgang,
Lukas Sponfeldner,
Kenji Watanabe,
Takashi Taniguchi,
Jelena Klinovaja,
Daniel Loss,
Richard John Warburton
Abstract:
Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS$_2$. The phase boundary separates a spin-polarised (ferromagnetic) phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the…
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Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS$_2$. The phase boundary separates a spin-polarised (ferromagnetic) phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the voltage applied to the gate electrode of the device. Accompanying the change in magnetism is a large change in the electron effective mass.
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Submitted 22 November, 2019;
originally announced November 2019.
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Prediction of the spin triplet two-electron quantum dots in Si: towards controlled quantum simulations of magnetic systems
Authors:
D. Miserev,
O. P. Sushkov
Abstract:
Ground state of two-electron quantum dots in single-valley materials like GaAs is always a spin singlet regardless of what the potential and interactions are.
This statement cannot be generalized to the multi-valley materials like $n$-doped Si.
Here we calculate numerically the spectrum of a two-electron Si quantum dot and show that the dot with the lateral size of several nm can have the spin…
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Ground state of two-electron quantum dots in single-valley materials like GaAs is always a spin singlet regardless of what the potential and interactions are.
This statement cannot be generalized to the multi-valley materials like $n$-doped Si.
Here we calculate numerically the spectrum of a two-electron Si quantum dot and show that the dot with the lateral size of several nm can have the spin triplet ground state which is impossible in the single-valley materials.
Predicted singlet-triplet level crossing in two-electron Si quantum dots can potentially establish the platform for quantum simulation of magnetic many body systems based on quantum dots.
We suggest several examples of such systems that open a way to controlled quantum simulations within the condensed matter setting.
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Submitted 13 November, 2019; v1 submitted 7 August, 2019;
originally announced August 2019.
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Exchange Intervalley Scattering And Magnetic Phase Diagram Of Transition Metal Dichalcogenide Monolayers
Authors:
Dmitry Miserev,
Jelena Klinovaja,
Daniel Loss
Abstract:
We analyze magnetic phases of monolayers of transition metal dichalcogenides that are two-valley materials with electron-electron interactions. The exchange inter-valley scattering makes two-valley systems less stable to the spin fluctuations but more stable to the valley fluctuations. We predict a first order ferromagnetic phase transition governed by the non-analytic and negative cubic term in t…
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We analyze magnetic phases of monolayers of transition metal dichalcogenides that are two-valley materials with electron-electron interactions. The exchange inter-valley scattering makes two-valley systems less stable to the spin fluctuations but more stable to the valley fluctuations. We predict a first order ferromagnetic phase transition governed by the non-analytic and negative cubic term in the free energy that results in a large spontaneous spin magnetization. Finite spin-orbit interaction leads to the out-of-plane Ising order of the ferromagnetic phase. Our theoretical prediction is consistent with the recent experiment on electron-doped monolayers of MoS$_2$ reported by Roch $\textit{et al.}$ [1]. The proposed first order phase transition can also be tested by measuring the linear magnetic field dependence of the spin susceptibility in the paramagnetic phase which is a direct consequence of the non-analyticity of the free energy.
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Submitted 11 July, 2019; v1 submitted 21 February, 2019;
originally announced February 2019.
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Electrical control of the Zeeman spin splitting in two-dimensional hole systems
Authors:
Elizabeth Marcellina,
Ashwin Srinivasan,
Dmitry Miserev,
Andrew Croxall,
David Ritchie,
Ian Farrer,
Oleg Sushkov,
Dimitrie Culcer,
Alex Hamilton
Abstract:
Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensional hole system in a GaAs quantum well, we demonstrate a new mechanism of electrically controlling the Zeeman splitting, which is achieved through altering the hole wave vector $k$. We find a threefold enhancement of the…
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Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensional hole system in a GaAs quantum well, we demonstrate a new mechanism of electrically controlling the Zeeman splitting, which is achieved through altering the hole wave vector $k$. We find a threefold enhancement of the in-plane $g-$factor $g_{\parallel}(k)$. We introduce a new method for quantifying the Zeeman splitting from magnetoresistance measurements, since the conventional tilted field approach fails for two-dimensional systems with strong spin-orbit coupling. Finally, we show that the Rashba spin-orbit interaction suppresses the in-plane Zeeman interaction at low magnetic fields. The ability to control the Zeeman splitting with electric fields opens up new possibilities for future quantum spin-based devices, manipulating non-Abelian geometric phases, and realising Majorana systems in $p-$type superconductor systems.
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Submitted 28 June, 2018;
originally announced June 2018.
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Detection and control of spin-orbit interactions in a GaAs hole quantum point contact
Authors:
A. Srinivasan,
D. S. Miserev,
K. L. Hudson,
O. Klochan,
K. Muraki,
Y. Hirayama,
D. Reuter,
A. D. Wieck,
O. P. Sushkov,
A. R. Hamilton
Abstract:
We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing and anti-crossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anti-crossing energy gap dep…
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We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing and anti-crossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anti-crossing energy gap depends on the interplay between the SOI terms and the highly anisotropic hole g tensor, and that this interplay can be tuned by selecting the crystal axis along which the current and magnetic field are aligned. Our results constitute independent detection and control of the Dresselhaus and Rashba SOIs in hole systems, which could be of importance for spintronics and quantum information applications.
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Submitted 12 March, 2017;
originally announced March 2017.
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Electrical control of the sign of the g-factor in a GaAs hole quantum point contact
Authors:
A. Srinivasan,
K. L. Hudson,
D. S. Miserev,
L. A. Yeoh,
O. Klochan,
K. Muraki,
Y. Hirayama,
O. P. Sushkov,
A. R. Hamilton
Abstract:
Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually determine the sign. Here we use a combination of tilted fields and a unique off-diagonal element in the hole g-tensor to directly detect the sign of g*. We are able to…
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Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually determine the sign. Here we use a combination of tilted fields and a unique off-diagonal element in the hole g-tensor to directly detect the sign of g*. We are able to tune not only the magnitude, but also the sign of the g-factor by electrical means, which is of interest for spintronics applications. Furthermore, we show theoretically that the resulting behavior of g* can be explained by the momentum dependence of the spin-orbit interaction.
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Submitted 26 February, 2017;
originally announced February 2017.
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Mechanisms for strong anisotropy of in-plane g-factors in hole based quantum point contacts
Authors:
D. S. Miserev,
A. Srinivasan,
O. A. Tkachenko,
V. A. Tkachenko,
I. Farrer,
D. A. Ritchie,
A. R. Hamilton,
O. P. Sushkov
Abstract:
In-plane hole g-factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contri…
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In-plane hole g-factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contributing to the effect and develop the theory which describes it successfully. We show that there is a new mechanism for the anisotropy related to the existence of an additional $B_+k_-^4σ_+$ effective Zeeman interaction for holes, which is kinematically different from the standard single Zeeman term $B_-k_-^2σ_+$ considered until now.
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Submitted 13 September, 2017; v1 submitted 2 December, 2016;
originally announced December 2016.
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Dimensional reduction of the Luttinger Hamiltonian and g-factors of holes in symmetric two-dimensional semiconductor heterostructures
Authors:
D. S. Miserev,
O. P. Sushkov
Abstract:
The spin-orbit interaction of holes in zinc-blende semiconductors is much stronger than that of electrons. This makes the hole systems very attractive for possible spintronics applications. In three dimensions (3D) dynamics of holes is described by well known Luttinger Hamiltonian. However, most of recent spintronics applications are related to two dimensional heterostructures where dynamics in on…
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The spin-orbit interaction of holes in zinc-blende semiconductors is much stronger than that of electrons. This makes the hole systems very attractive for possible spintronics applications. In three dimensions (3D) dynamics of holes is described by well known Luttinger Hamiltonian. However, most of recent spintronics applications are related to two dimensional heterostructures where dynamics in one direction is frozen due to quantum confinement. The confinement results in dimensional reduction of the Luttinger Hamiltonian, 3D ->2D. Due to interplay of the spin-orbit interaction, the external magnetic field, and the lateral gate potential imposed on the heterostructure the reduction is highly nontrivial and not known. In the present work we perform the reduction and hence derive the general effective Hamiltonian which describes spintronics effects in symmetric two-dimensional (2D) heterostructures. In particular, we do the following, (i) derive the spin-orbit interaction and the Darwin interaction related to the lateral gate potential, (ii) determine the momentum dependent out-of-plane g-factor, (iii) point out that there are two independent in-plane g-factors, (iv) determine momentum dependencies of the in-plane g-factors.
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Submitted 10 October, 2016;
originally announced October 2016.
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G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors
Authors:
D. S. Miserev,
O. P. Sushkov
Abstract:
Holes in cubic semiconductors have effective spin 3/2 and very strong spin orbit interaction. Due to these factors properties of hole bound states are highly unusual. We consider a single hole bound by a spherically symmetric potential, this can be an acceptor or a spherically symmetric quantum dot. Linear response to an external magnetic field is characterized by the bound state Lande g-factor. W…
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Holes in cubic semiconductors have effective spin 3/2 and very strong spin orbit interaction. Due to these factors properties of hole bound states are highly unusual. We consider a single hole bound by a spherically symmetric potential, this can be an acceptor or a spherically symmetric quantum dot. Linear response to an external magnetic field is characterized by the bound state Lande g-factor. We calculate analytically g-factors of all bound states.
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Submitted 25 August, 2015;
originally announced August 2015.
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Analytical study of bound states in graphene nano-ribbons and carbon nanotubes: The variable phase method and the relativistic Levinson theorem
Authors:
D. S. Miserev
Abstract:
The problem of localized states in 1D systems with the relativistic spectrum, namely, graphene stripes and carbon nanotubes, has been analytically studied. The bound state as a superposition of two chiral states is completely described by their relative phase which is the foundation of the variable phase method (VPM) developed herein. Basing on our VPM, we formulate and prove the relativistic Levi…
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The problem of localized states in 1D systems with the relativistic spectrum, namely, graphene stripes and carbon nanotubes, has been analytically studied. The bound state as a superposition of two chiral states is completely described by their relative phase which is the foundation of the variable phase method (VPM) developed herein. Basing on our VPM, we formulate and prove the relativistic Levinson theorem. The problem of bound state can be reduced to the analysis of closed trajectories of some vector field. Remarkably, the Levinson theorem appears as the Poincare indices theorem for these closed trajectories. The reduction of the VPM equation to the non-relativistic and semi-classical limits has been done. The limit of the small momentum $p_y$ of the transverse quantization is applicable to arbitrary integrable potential. In this case the only confined mode is predicted.
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Submitted 14 March, 2016; v1 submitted 24 August, 2014;
originally announced August 2014.
