-
Point-contact studies of semiconductor $PbTe-PbS$ superconducting superlattice as a model of HTS
Authors:
N. L. Bobrov,
L. F. Rybal'chenko,
V. V. Fisun,
I. K. Yanson,
O. A. Mironov,
S. V. Chistyakov,
V. V. Zorchenko,
A. Yu. Sipatov,
A. I. Fedorenko
Abstract:
Superconducting (SC) superlattices (SL) of the epitaxial semiconductor $PbTe-PbS$/(001) $KCl$ with two-dimensional ordered misfit dislocation (MD) networks across heteroboundaries (HB) are studied, and the obtained results are compared with the corresponding data for $YBaCuO$. An analysis of the fluctuational region showed that the pairing of electrons in SL takes place at the sites of dislocation…
▽ More
Superconducting (SC) superlattices (SL) of the epitaxial semiconductor $PbTe-PbS$/(001) $KCl$ with two-dimensional ordered misfit dislocation (MD) networks across heteroboundaries (HB) are studied, and the obtained results are compared with the corresponding data for $YBaCuO$. An analysis of the fluctuational region showed that the pairing of electrons in SL takes place at the sites of dislocation networks. In the region of SC fluctuations, the IVC derivatives of point-contacts (PC) based on SL and HTS display a metal-insulator transition associated with delocalization of carriers from the vicinity of the structural elements responsible for the emergence of SC. The critical current density in a superlattice is determined, and a mechanism is proposed for formation of excess current on the IVC of PC based on SL and HTS. The values of the energy gap $Δ_0$ at low temperatures in units of $kT_c$ are found to be anomalously large for SL and HTS. For anisotropic three-dimensional SL with a strong bond between two-dimensional SC planes, two gaps emerge from the MD. For quasi-two-dimensional SL with a weak bond between two-dimensional SC planes, the $Δ(T)$ dependence is nonmonotonic, and the fluctuation region for these SL and for HTS reveals a gap that is practically independent of temperature. The IVC derivatives of a $Cu$-SL PC reveal an oscillating structure which is restricted to an energy of $90\ meV$ and is apparently associated with the electron-phonon interaction. It is assumed that there is a similarity between the SC mechanisms in SL and HTS. pacs 73.40.Jn, 74.25.Kc, 74.45.+c, 74.50.+r., 73.40.-c, 74.78.-w, 74.78.Fk, 74.20.Mn, 74.40.+k.-n, 74.45.+c, 74.62.Dn, 74.70.Ad
△ Less
Submitted 9 January, 2017; v1 submitted 20 November, 2016;
originally announced November 2016.
-
Point-contact measurements of the energy gap of lead-chalcogenide-based superconducting superlattices
Authors:
I. K. Yanson,
N. L. Bobrov,
L. F. Rybal'chenko,
V. V. Fisun,
O. A. Mironov,
S. V. Chistyakov,
A. Yu. Sipatov,
A. I. Fedorenko
Abstract:
The energy gap of superconducting $PbTe-PbS$ semiconductor superlattices has been analyzed with the help of point contacts for the first time below the critical temperature, $T_{c}=3.9~K$, and in the fluctuation region $T>T_{c}$. The size of the gap and its dependence on the temperature and field are determined by the position of the point contact inside the superlattice. \pacs{73.40.Jn, 74.25.Kc,…
▽ More
The energy gap of superconducting $PbTe-PbS$ semiconductor superlattices has been analyzed with the help of point contacts for the first time below the critical temperature, $T_{c}=3.9~K$, and in the fluctuation region $T>T_{c}$. The size of the gap and its dependence on the temperature and field are determined by the position of the point contact inside the superlattice. \pacs{73.40.Jn, 74.25.Kc, 74.45.+c, 74.50.+r., 73.40.-c, 74.78.-w, 74.78.Fk, 74.20.Mn, 74.40.+k.-n, 74.45.+c, 74.62.Dn, 74.70.Ad
△ Less
Submitted 9 January, 2017; v1 submitted 20 November, 2016;
originally announced November 2016.
-
Fractional Quantum Hall States in a Ge Quantum Well
Authors:
O. A. Mironov,
N. d'Ambrumenil,
A. Dobbie,
A. V. Suslov,
E. Green,
D. R. Leadley
Abstract:
Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We find quantum Hall states in the Composite Fermion family and a precursor signal at filling fraction $ν=5/2$. We analyse the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across sad…
▽ More
Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We find quantum Hall states in the Composite Fermion family and a precursor signal at filling fraction $ν=5/2$. We analyse the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across saddle points in the long range impurity potential. This shows that the gaps for different filling fractions closely follow the dependence predicted by theory. We also find that the estimates of the separation of the edge states at the saddle are in line with the expectations of an electrostatic model in the lowest spin-polarised Landau level (LL), but not in the spin-reversed LL where the density of quasiparticle states is not high enough to accommodate the carriers required.
△ Less
Submitted 20 May, 2016; v1 submitted 22 December, 2015;
originally announced December 2015.
-
In-plane magnetic field effect on hole cyclotron mass and $g_z$ factor in high-mobility SiGe/Ge/SiGe structures
Authors:
I. L. Drichko,
V. A. Malysh,
I. Yu. Smirnov,
L. E. Golub,
S. A. Tarasenko,
A. V. Suslov,
O. A. Mironov,
M. Kummer,
H. von Känel
Abstract:
The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of 30 and 85~MHz and magnetic fields $B$ of up to 18 T in the temperature range of 0.3 -- 5.8 K. The acoustic effects were also measured as a function of the tilt…
▽ More
The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of 30 and 85~MHz and magnetic fields $B$ of up to 18 T in the temperature range of 0.3 -- 5.8 K. The acoustic effects were also measured as a function of the tilt angle of the magnetic field with respect to the normal of the two-dimensional channel at $T$=0.3 K. It is shown, that at the minima of the conductivity oscillations, holes are localized on the Fermi level, and that there is a temperature domain in which the high-frequency conductivity in the bulk of the quantum well is of the activation nature. The analysis of the temperature dependence of the conductivity at odd filling factors enables us to determine the effective $g_z$ factor. It is shown that the in-plane component of the magnetic field leads to an increase of the cyclotron mass and to a reduction of the $g_z$ factor. We developed a microscopic theory of these effects for the heavy-hole states of the complex valence band in quantum wells which describes well the experimental findings.
△ Less
Submitted 13 November, 2014;
originally announced November 2014.
-
Hall field-induced resistance oscillations in Ge/SiGe quantum wells
Authors:
Q. Shi,
M. A. Zudov,
O. A. Mironov,
D. R. Leadley
Abstract:
We report on a magnetotransport study in a high-mobility 2D hole gas hosted in a pure Ge/SiGe quantum well subject to dc electric fields and high frequency microwave radiation. We find that under applied dc bias the differential resistivity exhibits a pronounced maximum at a magnetic field which increases linearly with the applied current. We associate this maximum with the fundamental peak of Hal…
▽ More
We report on a magnetotransport study in a high-mobility 2D hole gas hosted in a pure Ge/SiGe quantum well subject to dc electric fields and high frequency microwave radiation. We find that under applied dc bias the differential resistivity exhibits a pronounced maximum at a magnetic field which increases linearly with the applied current. We associate this maximum with the fundamental peak of Hall field-induced resistance oscillations (HIRO) which are known to occur in 2D electron gases in GaAs/AlGaAs systems. After taking into account the Dingle factor correction, we find that the position of the HIRO peak is well described by the hole effective mass $m^\star \approx 0.09\,m_0$, obtained from microwave photoresistance in the same sample.
△ Less
Submitted 5 May, 2014;
originally announced May 2014.
-
Observation of microwave-induced resistance oscillations in strained Ge/SiGe quantum wells
Authors:
M. A. Zudov,
O. A. Mironov,
Q. A. Ebner,
P. D. Martin,
Q. Shi,
D. R. Leadley
Abstract:
Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the first observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized t…
▽ More
Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the first observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized to probe the energy spectrum and the correlation effects of 2D holes in Ge/SiGe quantum wells.
△ Less
Submitted 5 May, 2014;
originally announced May 2014.
-
Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields
Authors:
I. L. Drichko,
V. A. Malysh,
I. Yu. Smirnov,
A. V. Suslov,
O. A. Mironov,
M. Kummer,
H. von Känel
Abstract:
The contactless Surface Acoustic Wave (SAW) technique was implemented to probe the high-frequency (ac) conductivity in a high-mobility $p$-SiGe/Ge/SiGe structure in the integer quantum Hall (IQHE) regime. The structure was grown by low-energy plasma-enhanced chemical vapor deposition and comprised a two-dimensional channel formed in a compressively strained Ge layer. It was investigated at tempera…
▽ More
The contactless Surface Acoustic Wave (SAW) technique was implemented to probe the high-frequency (ac) conductivity in a high-mobility $p$-SiGe/Ge/SiGe structure in the integer quantum Hall (IQHE) regime. The structure was grown by low-energy plasma-enhanced chemical vapor deposition and comprised a two-dimensional channel formed in a compressively strained Ge layer. It was investigated at temperatures of 0.3 - 5.8 K and magnetic fields up to 18 T at various SAW intensities. In the IQHE regime, in minima of the conductivity oscillations with small filling factors, holes are localized. The ac conductivity is of the hop** nature and can be described within the "two-site" model. Furthermore, the dependence of the ac conductivity on the electric field of the SAW was determined. The manifestation of non-linear effects is interpreted in terms of nonlinear percolation-based conductivity.
△ Less
Submitted 11 December, 2013;
originally announced December 2013.
-
Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
O. A. Mironov,
D. R. Leadley
Abstract:
The magnetoresistance components $ρ_{xx}$ and $ρ_{xy}$ were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of temperature, field and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for a sample with a hole density of $p$=2$\times10^{11}$\,cm$^{-2}$. This tran…
▽ More
The magnetoresistance components $ρ_{xx}$ and $ρ_{xy}$ were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of temperature, field and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for a sample with a hole density of $p$=2$\times10^{11}$\,cm$^{-2}$. This transition is due to crossing of the 0$\uparrow$ and 1$\downarrow$ Landau levels. However, in another sample, with $p$=7.2$\times10^{10}$\,cm$^{-2}$, the 0$\uparrow$ and 1$\downarrow$ Landau levels coincide for angles $Θ$=0-70$^{\text{o}}$. Only for $Θ$ > 70$^{\text{o}}$ do the levels start to diverge which, in turn, results in the energy gap opening.
△ Less
Submitted 5 April, 2012;
originally announced April 2012.
-
Magnetoresistivity and Acoustoelectronic Effects in a Tilted Magnetic Field in $p$-Si/SiGe/Si Structures with an Anisotropic $g$ Factor
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
O. A. Mironov,
D. R. Leadley
Abstract:
Magnetoresistivity $ρ_{xx}$ and $ρ_{xy}$ and the acoustoelectronic effects are measured in $p$-Si/SiGe/Si with an impurity concentration $p$ = 2 $\times $ 10$^{11}$ cm$^{-2}$ in the temperature range 0.3-2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective $g$-factor on the angle of magnetic field tilt $θ$ to the normal to the plane of a two dimensional $p$-Si/SiGe/Si cha…
▽ More
Magnetoresistivity $ρ_{xx}$ and $ρ_{xy}$ and the acoustoelectronic effects are measured in $p$-Si/SiGe/Si with an impurity concentration $p$ = 2 $\times $ 10$^{11}$ cm$^{-2}$ in the temperature range 0.3-2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective $g$-factor on the angle of magnetic field tilt $θ$ to the normal to the plane of a two dimensional $p$-Si/SiGe/Si channel is determined. A first order ferromagnet-paramagnet phase transition is observed in the magnetic fields corresponding to a filling factor $ν$ = 2 at $θ\approx $ 59$^\textrm{o}$-60$^\textrm{o}$.
△ Less
Submitted 24 November, 2010;
originally announced November 2010.
-
Magnetoresistance in Dilute $p$-Si/SiGe in Parallel and Tilted Magnetic Fields
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
O. A. Mironov,
D. R. Leadley
Abstract:
We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ and $ρ_{xy}$ in two samples of $p$-Si/SiGe with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two-dimensional (2D) channel…
▽ More
We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ and $ρ_{xy}$ in two samples of $p$-Si/SiGe with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two-dimensional (2D) channel plane. The large in-plane magnetoresistance can be explained by the influence of the \textit{in-plane} magnetic field on the orbital motion of the charge carriers in the quasi-2D system. The measurements of $ρ_{xx}$ and $ρ_{xy}$ in the tilted magnetic field showed that the anomaly in $ρ_{xx}$, observed at filling factor $ν$=3/2 is practically nonexistent in the conductivity $σ_{xx}$. The anomaly in $σ_{xx}$ at $ν$=2 might be explained by overlap** of the levels with different spins 0$\uparrow$ and 1$\downarrow$ when the tilt angle of the applied magnetic field is changed. The dependence of g-factor $g^*(Θ)/g^*(0^0)$ on the tilt angle $Θ$ was determined.
△ Less
Submitted 15 October, 2009;
originally announced October 2009.
-
Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure
Authors:
I. L. Drichko,
A. M. Diakonov,
E. V. Lebedeva,
I. Yu. Smirnov,
O. A. Mironov,
M. Kummer,
H. von Känel
Abstract:
Measurement results of the acoustoelectric effects (surface acoustic waves (SAW) attenuation and velocity) in a high-mobility $p$-SiGe/Ge/SiGe structure are presented. The structure was LEPECVD grown with a two dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5 - 4.2 K) and magnetic field (up to 8.4 T) at different SAW inte…
▽ More
Measurement results of the acoustoelectric effects (surface acoustic waves (SAW) attenuation and velocity) in a high-mobility $p$-SiGe/Ge/SiGe structure are presented. The structure was LEPECVD grown with a two dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5 - 4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time $τ_{\varepsilon}$ and the deformation potential constant determined.
△ Less
Submitted 15 June, 2009;
originally announced June 2009.
-
Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
O. A. Mironov,
D. R. Leadley
Abstract:
We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K in the magnetic fields of up to 18 T, parallel to the two-dimensional (2D) channel plane at two orientations of the in-p…
▽ More
We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K in the magnetic fields of up to 18 T, parallel to the two-dimensional (2D) channel plane at two orientations of the in-plane magnetic field $B_{\parallel}$ against the current $I$: $B_{\parallel} \perp I$ and $B_{\parallel} \parallel I$. In the sample with the lowest density in the magnetic field range of 0-7.2 T the temperature dependence of $ρ_{xx}$ demonstrates the metallic characteristics ($d ρ_{xx}/dT>$0). However, at $B_{\parallel}$ =7.2 T the derivative $d ρ_{xx}/dT$ reverses the sign. Moreover, the resistance depends on the current orientation with respect to the in-plane magnetic field. At $B_{\parallel} \cong$ 13 T there is a transition from the dependence $\ln(Δρ_{xx} / ρ_{0})\propto B_{\parallel}^2$ to the dependence $\ln(Δρ_{xx} / ρ_{0})\propto B_{\parallel}$. The observed effects can be explained by the influence of the in-plane magnetic field on the orbital motion of the charge carriers in the quasi-2D system.
△ Less
Submitted 27 April, 2009; v1 submitted 17 July, 2008;
originally announced July 2008.
-
Magnetotransport in low-density $p$-Si/SiGe heterostructures: From metal through hop** insulator to Wigner glass
Authors:
I. L. Drichko,
A. M. Dyakonov,
I. Yu. Smirnov,
A. V. Suslov,
Y. M. Galperin,
V. Vinokur,
M. Myronov,
O. A. Mironov,
D. R. Leadley
Abstract:
We study DC and AC transport in low-density $p-$Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex AC conductance is determined from simultaneous measurement of velocity and attenuation of a surface acoustic wave propagating in close vicinity of the 2D hole layer. The observed behaviors of DC and AC conductance are interpreted as an evolutio…
▽ More
We study DC and AC transport in low-density $p-$Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex AC conductance is determined from simultaneous measurement of velocity and attenuation of a surface acoustic wave propagating in close vicinity of the 2D hole layer. The observed behaviors of DC and AC conductance are interpreted as an evolution from metallic conductance at B=0 through hop** between localized states in intermediate magnetic fields (close to the plateau of the integer quantum Hall effect corresponding to the Landau-level filling factor $ν$=1) to formation of the Wigner glass in the extreme quantum limit ($B\gtrsim 14$, $T \lesssim 0.8$ K).
△ Less
Submitted 5 December, 2007;
originally announced December 2007.
-
High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime
Authors:
I. L. Drichko,
A. M. Diakonov,
I. Yu. Smirnov,
G. O. Andrianov,
O. A. Mironov,
M. Myronov,
D. R. Leadley,
T. E. Whall
Abstract:
The interaction of surface acoustic waves (SAW) with $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7$<T<$1.6 K and magnetic fields up to 7 T, the SAW attenuation coefficient $Γ$ and velocity change $ΔV /V$ were found to oscillate with filling factor. Both the real $σ_1$ and imaginary $σ_2$ components of the…
▽ More
The interaction of surface acoustic waves (SAW) with $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7$<T<$1.6 K and magnetic fields up to 7 T, the SAW attenuation coefficient $Γ$ and velocity change $ΔV /V$ were found to oscillate with filling factor. Both the real $σ_1$ and imaginary $σ_2$ components of the high-frequency conductivity have been determined and compared with quasi-dc magnetoresistance measurements at temperatures down to 33 mK. By analyzing the ratio of $σ_1$ to $σ_2$, carrier localization can be followed as a function of temperature and magnetic field. At $T$=0.7 K, the variations of $Γ$, $ΔV /V$ and $σ_1$ with SAW intensity have been studied and can be explained by heating of the two dimensional hole gas by the SAW electric field. Energy relaxation is found to be dominated by acoustic phonon deformation potential scattering with weak screening.
△ Less
Submitted 19 November, 2004;
originally announced November 2004.
-
Surface Acoustic Waves probe of the p-type Si/SiGe heterostructures
Authors:
G. O. Andrianov,
I. L. Drichko,
A. M. Diakonov,
I. Yu. Smirnov,
O. A. Mironov,
M. Myronov,
T. E. Whall,
D. R. Leadley
Abstract:
The surface acoustic wave (SAWs) attenuation coefficient $Γ$ and the velocity change $ΔV /V$ were measured for $p$-type Si/SiGe heterostructures in the temperature range 0.7 - 1.6 K as a function of external magnetic field $H$ up to 7 T and in the frequency range 30-300 MHz in the hole Si/SiGe heterostructures. Oscillations of $Γ$ (H) and $ΔV /V$ (H) in a magnetic field were observed. Both real…
▽ More
The surface acoustic wave (SAWs) attenuation coefficient $Γ$ and the velocity change $ΔV /V$ were measured for $p$-type Si/SiGe heterostructures in the temperature range 0.7 - 1.6 K as a function of external magnetic field $H$ up to 7 T and in the frequency range 30-300 MHz in the hole Si/SiGe heterostructures. Oscillations of $Γ$ (H) and $ΔV /V$ (H) in a magnetic field were observed. Both real $σ_1$ (H) and imaginary $σ_2$ (H) components of the high-frequency conductivity have been determined. Analysis of the $σ_1$ to $σ_2$ ratio allows the carrier localization to be followed as a function of temperature and magnetic field. At T=0.7 K the variation of $Γ$, $ΔV /V$ and $σ_1$ with SAW intensity have been studied and could be attributed to 2DHG heating by the SAW electric field. The energy relaxation time is found to be dominated by scattering at the deformation potential of the acoustic phonons with weak screening.
△ Less
Submitted 30 January, 2004;
originally announced January 2004.
