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Coherent Control of an Optical Quantum Dot Using Phonons and Photons
Authors:
Ryan A DeCrescent,
Zixuan Wang,
Joseph T Bush,
Poolad Imany,
Alex Kwiatkowski,
Dileep V Reddy,
Sae Woo Nam,
Richard P Mirin,
Kevin L Silverman
Abstract:
Genuine quantum-mechanical effects are readily observable in modern optomechanical systems comprising bosonic ("classical") optical resonators. Here we describe unique features and advantages of optical two-level systems, or qubits, for optomechanics. The qubit state can be coherently controlled using both phonons and resonant or detuned photons. We experimentally demonstrate this using charge-con…
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Genuine quantum-mechanical effects are readily observable in modern optomechanical systems comprising bosonic ("classical") optical resonators. Here we describe unique features and advantages of optical two-level systems, or qubits, for optomechanics. The qubit state can be coherently controlled using both phonons and resonant or detuned photons. We experimentally demonstrate this using charge-controlled InAs quantum dots (QDs) in surface-acoustic-wave resonators. Time-correlated single-photon counting measurements reveal the control of QD population dynamics using engineered optical pulses and mechanical motion. As a first example, at moderate acoustic drive strengths, we demonstrate the potential of this technique to maximize fidelity in quantum microwave-to-optical transduction. Specifically, we tailor the scheme so that mechanically assisted photon scattering is enhanced over the direct detuned photon scattering from the QD. Spectral analysis reveals distinct scattering channels related to Rayleigh scattering and luminescence in our pulsed excitation measurements which lead to time-dependent scattering spectra. Quantum-mechanical calculations show good agreement with our experimental results, together providing a comprehensive description of excitation, scattering and emission in a coupled QD-phonon optomechanical system.
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Submitted 16 May, 2024; v1 submitted 2 April, 2024;
originally announced April 2024.
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Gated InAs quantum dots embedded in surface acoustic wave cavities for low-noise optomechanics
Authors:
Zixuan Wang,
Ryan A. DeCrescent,
Poolad Imany,
Joseph T. Bush,
Dileep V. Reddy,
Sae Woo Nam,
Richard P. Mirin,
Kevin L. Silverman
Abstract:
Self-assembled InAs quantum dots (QDs) are promising optomechanical elements due to their excellent photonic properties and sensitivity to local strain fields. Microwave-frequency modulation of photons scattered from these efficient quantum emitters has been recently demonstrated using surface acoustic wave (SAW) cavities. However, for optimal performance, a gate structure is required to determini…
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Self-assembled InAs quantum dots (QDs) are promising optomechanical elements due to their excellent photonic properties and sensitivity to local strain fields. Microwave-frequency modulation of photons scattered from these efficient quantum emitters has been recently demonstrated using surface acoustic wave (SAW) cavities. However, for optimal performance, a gate structure is required to deterministically control the charge state and reduce charge noise of the QDs. Here, we integrate gated QDs and SAW cavities using molecular beam epitaxy and nanofabrication. We demonstrate that with careful design of the substrate layer structure, integration of the two systems can be accomplished while retaining the optimal performance of each subsystem. These results mark a critical step toward efficient and low-noise optomechanical systems for microwave-to-optical quantum transduction.
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Submitted 15 December, 2023;
originally announced December 2023.
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Programmable Superconducting Optoelectronic Single-Photon Synapses with Integrated Multi-State Memory
Authors:
Bryce A. Primavera,
Saeed Khan,
Richard P. Mirin,
Sae Woo Nam,
Jeffrey M. Shainline
Abstract:
The co-location of memory and processing is a core principle of neuromorphic computing. A local memory device for synaptic weight storage has long been recognized as an enabling element for large-scale, high-performance neuromorphic hardware. In this work, we demonstrate programmable superconducting synapses with integrated memories for use in superconducting optoelectronic neural systems. Superco…
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The co-location of memory and processing is a core principle of neuromorphic computing. A local memory device for synaptic weight storage has long been recognized as an enabling element for large-scale, high-performance neuromorphic hardware. In this work, we demonstrate programmable superconducting synapses with integrated memories for use in superconducting optoelectronic neural systems. Superconducting nanowire single-photon detectors and Josephson junctions are combined into programmable synaptic circuits that exhibit single-photon sensitivity, memory cells with more than 400 internal states, leaky integration of input spike events, and 0.4 fJ programming energies (including cooling power). These results are attractive for implementing a variety of supervised and unsupervised learning algorithms and lay the foundation for a new hardware platform optimized for large-scale spiking network accelerators.
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Submitted 10 November, 2023;
originally announced November 2023.
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Monolithic Integration of Superconducting-Nanowire Single-Photon Detectors with Josephson Junctions for Scalable Single-photon Sensing
Authors:
Saeed Khan,
Bryce A. Primavera,
Richard P. Mirin,
Sae Woo Nam,
Jeffrey M. Shainline
Abstract:
We demonstrate superconducting single-photon detectors that integrate signals locally at each pixel. This capability is realized by the monolithic integration of superconducting-nanowire single-photon detectors with Josephson electronics. The motivation is to realize superconducting sensor elements with integrating capabilities similar to their CMOS-sensor counterparts. The pixels can operate in s…
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We demonstrate superconducting single-photon detectors that integrate signals locally at each pixel. This capability is realized by the monolithic integration of superconducting-nanowire single-photon detectors with Josephson electronics. The motivation is to realize superconducting sensor elements with integrating capabilities similar to their CMOS-sensor counterparts. The pixels can operate in several modes. First, we demonstrate that photons can be counted individually, with each detection event adding an identical amount of supercurrent to an integrating element. Second, we demonstrate an active gain control option, in which the signal added per detection event can be dynamically adjusted to account for variable light conditions. Additionally, the pixels can either retain signal indefinitely to record all counts incurred over an integration period, or the pixels can record a fading signal of detection events within a decay time constant. We describe additional semiconductor readout circuitry that will be used in future work to realize scalable, large-format sensor arrays of superconducting single photon detectors compatible with CMOS array readout architectures.
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Submitted 19 October, 2023;
originally announced October 2023.
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Monolithic Polarizing Circular Dielectric Gratings on Bulk Substrates for Improved Photon Collection from InAs Quantum Dots
Authors:
Ryan A. DeCrescent,
Zixuan Wang,
Poolad Imany,
Sae Woo Nam,
Richard P. Mirin,
Kevin L. Silverman
Abstract:
III-V semiconductor quantum dots (QDs) are near-ideal and versatile single-photon sources. Because of the capacity for monolithic integration with photonic structures as well as optoelectronic and optomechanical systems, they are proving useful in an increasingly broad application space. Here, we develop monolithic circular dielectric gratings on bulk substrates -- as opposed to suspended or wafer…
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III-V semiconductor quantum dots (QDs) are near-ideal and versatile single-photon sources. Because of the capacity for monolithic integration with photonic structures as well as optoelectronic and optomechanical systems, they are proving useful in an increasingly broad application space. Here, we develop monolithic circular dielectric gratings on bulk substrates -- as opposed to suspended or wafer-bonded substrates -- for greatly improved photon collection from InAs quantum dots. The structures utilize a unique two-tiered distributed Bragg reflector (DBR) structure for vertical electric field confinement over a broad angular range. Opposing ``openings" in the cavities induce strongly polarized QD luminescence without harming collection efficiencies. We describe how measured enhancements depend critically on the choice of collection optics. This is important to consider when evaluating the performance of any photonic structure that concentrates farfield emission intensity. Our cavity designs are useful for integrating QDs with other quantum systems that require bulk substrates, such as surface acoustic wave phonons.
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Submitted 6 October, 2023; v1 submitted 2 October, 2023;
originally announced October 2023.
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A 64-pixel mid-infrared single-photon imager based on superconducting nanowire detectors
Authors:
Benedikt Hampel,
Richard P. Mirin,
Sae Woo Nam,
Varun B. Verma
Abstract:
A large-format mid-infrared single-photon imager with very low dark count rates would enable a broad range of applications in fields like astronomy and chemistry. Superconducting nanowire single-photon detectors (SNSPDs) are a mature photon-counting technology as demonstrated by their figures of merit. However, scaling SNSPDs to large array sizes for mid-infrared applications requires sophisticate…
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A large-format mid-infrared single-photon imager with very low dark count rates would enable a broad range of applications in fields like astronomy and chemistry. Superconducting nanowire single-photon detectors (SNSPDs) are a mature photon-counting technology as demonstrated by their figures of merit. However, scaling SNSPDs to large array sizes for mid-infrared applications requires sophisticated readout architectures in addition to superconducting materials development. In this work, an SNSPD array design that combines a thermally coupled row-column multiplexing architecture with a thermally coupled time-of-flight transmission line was developed for mid-infrared applications. The design requires only six cables and can be scaled to larger array sizes. The demonstration of a 64-pixel array shows promising results for wavelengths between $\mathrm{3.4\,μm}$ and $\mathrm{10\,μm}$, which will enable the use of this single-photon detector technology for a broad range of new applications.
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Submitted 28 September, 2023;
originally announced September 2023.
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Trap-Integrated Superconducting Nanowire Single-Photon Detectors with Improved RF Tolerance for Trapped-Ion Qubit State Readout
Authors:
Benedikt Hampel,
Daniel H. Slichter,
Dietrich Leibfried,
Richard P. Mirin,
Sae Woo Nam,
Varun B. Verma
Abstract:
State readout of trapped-ion qubits with trap-integrated detectors can address important challenges for scalable quantum computing, but the strong rf electric fields used for trap** can impact detector performance. Here, we report on NbTiN superconducting nanowire single-photon detectors (SNSPDs) employing grounded aluminum mirrors as electrical shielding that are integrated into linear surface-…
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State readout of trapped-ion qubits with trap-integrated detectors can address important challenges for scalable quantum computing, but the strong rf electric fields used for trap** can impact detector performance. Here, we report on NbTiN superconducting nanowire single-photon detectors (SNSPDs) employing grounded aluminum mirrors as electrical shielding that are integrated into linear surface-electrode rf ion traps. The shielded SNSPDs can be successfully operated at applied rf trap** potentials of up to $\mathrm{54\,V_{peak}}$ at $\mathrm{70\,MHz}$ and temperatures of up to $\mathrm{6\,K}$, with a maximum system detection efficiency of $\mathrm{68\,\%}$. This performance should be sufficient to enable parallel high-fidelity state readout of a wide range of trapped ion species in typical cryogenic apparatus.
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Submitted 2 February, 2023;
originally announced February 2023.
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Large Single-Phonon Optomechanical Coupling between Quantum Dots and Tightly Confined Surface Acoustic Waves in the Quantum Regime
Authors:
Ryan A. DeCrescent,
Zixuan Wang,
Poolad Imany,
Robert C. Boutelle,
Corey A. McDonald,
Travis Autry,
John D. Teufel,
Sae Woo Nam,
Richard P. Mirin,
Kevin L. Silverman
Abstract:
Surface acoustic waves (SAWs) coupled to quantum dots (QDs), trapped atoms and ions, and point defects have been proposed as quantum transduction platforms, yet the requisite coupling rates and cavity lifetimes have not been experimentally established. Although the interaction mechanism varies, small acoustic cavities with large zero-point motion are required for high efficiencies. We experimental…
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Surface acoustic waves (SAWs) coupled to quantum dots (QDs), trapped atoms and ions, and point defects have been proposed as quantum transduction platforms, yet the requisite coupling rates and cavity lifetimes have not been experimentally established. Although the interaction mechanism varies, small acoustic cavities with large zero-point motion are required for high efficiencies. We experimentally establish the feasibility of this platform through electro- and opto-mechanical characterization of tightly focusing, single-mode Gaussian SAW cavities at $\sim$3.6 GHz on GaAs. We explore the performance limits of the platform by fabricating SAW cavities with mode volumes approaching 6$λ^3$ and linewidths $\leq$1 MHz. Employing strain-coupled single InAs QDs as optomechanical intermediaries, we measure single-phonon optomechanical coupling rates $g_0 \approx 2π\times 1.2$ MHz. Sideband scattering rates thus exceed intrinsic phonon loss, indicating the potential for quantum optical readout and transduction of cavity phonon states. To demonstrate the feasibility of this platform for low-noise ground-state quantum transduction, we develop a fiber-based confocal microscope in a dilution refrigerator and perform single-QD resonance fluorescence sideband spectroscopy at mK temperatures. These measurements show conversion between microwave phonons and optical photons with sub-natural linewidths.
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Submitted 24 August, 2022; v1 submitted 2 May, 2022;
originally announced May 2022.
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Demonstration of Superconducting Optoelectronic Single-Photon Synapses
Authors:
Saeed Khan,
Bryce A. Primavera,
Jeff Chiles,
Adam N. McCaughan,
Sonia M. Buckley,
Alexander N. Tait,
Adriana Lita,
John Biesecker,
Anna Fox,
David Olaya,
Richard P. Mirin,
Sae Woo Nam,
Jeffrey M. Shainline
Abstract:
Superconducting optoelectronic hardware is being explored as a path towards artificial spiking neural networks with unprecedented scales of complexity and computational ability. Such hardware combines integrated-photonic components for few-photon, light-speed communication with superconducting circuits for fast, energy-efficient computation. Monolithic integration of superconducting and photonic d…
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Superconducting optoelectronic hardware is being explored as a path towards artificial spiking neural networks with unprecedented scales of complexity and computational ability. Such hardware combines integrated-photonic components for few-photon, light-speed communication with superconducting circuits for fast, energy-efficient computation. Monolithic integration of superconducting and photonic devices is necessary for the scaling of this technology. In the present work, superconducting-nanowire single-photon detectors are monolithically integrated with Josephson junctions for the first time, enabling the realization of superconducting optoelectronic synapses. We present circuits that perform analog weighting and temporal leaky integration of single-photon presynaptic signals. Synaptic weighting is implemented in the electronic domain so that binary, single-photon communication can be maintained. Records of recent synaptic activity are locally stored as current in superconducting loops. Dendritic and neuronal nonlinearities are implemented with a second stage of Josephson circuitry. The hardware presents great design flexibility, with demonstrated synaptic time constants spanning four orders of magnitude (hundreds of nanoseconds to milliseconds). The synapses are responsive to presynaptic spike rates exceeding 10 MHz and consume approximately 33 aJ of dynamic power per synapse event before accounting for cooling. In addition to neuromorphic hardware, these circuits introduce new avenues towards realizing large-scale single-photon-detector arrays for diverse imaging, sensing, and quantum communication applications.
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Submitted 20 April, 2022;
originally announced April 2022.
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Broadband polarization insensitivity and high detection efficiency in high-fill-factor superconducting microwire single-photon detectors
Authors:
Dileep V. Reddy,
Negar Otrooshi,
Sae Woo Nam,
Richard P. Mirin,
Varun B. Verma
Abstract:
Single-photon detection via absorption in current-biased nanoscale superconducting structures has become a preferred technology in quantum optics and related fields. Single-mode fiber packaged devices have seen new records set in detection efficiency, timing jitter, recovery times, and largest sustainable count rates. The popular approaches to decreasing polarization sensitivity have thus far been…
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Single-photon detection via absorption in current-biased nanoscale superconducting structures has become a preferred technology in quantum optics and related fields. Single-mode fiber packaged devices have seen new records set in detection efficiency, timing jitter, recovery times, and largest sustainable count rates. The popular approaches to decreasing polarization sensitivity have thus far been limited to introduction of geometrically symmetric nanowire meanders, such as spirals and fractals, in the active area. The constraints on bending radii, and by extension, fill factors, in such designs limits their maximum efficiency. The discovery of single-photon sensitivity in micrometer-scale superconducting wires enables novel meander patterns with no effective upper limit on fill factor. This work demonstrates simultaneous low-polarization sensitivity ($1.02\pm 0.008$) and high detection efficiency ($> 91.8\%$ with $67\%$ confidence at $2\times10^5$ counts per second) across a $40$ nm bandwidth centered at 1550 nm in 0.51 $μ\text{m}$ wide microwire devices made of silicon-rich tungsten silicide, with a $0.91$ fill factor in the active area. These devices boasted efficiencies of $96.5-96.9\% \pm 0.5\%$ at $1\times10^5$ counts per second for 1550 nm light.
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Submitted 2 March, 2022; v1 submitted 11 February, 2022;
originally announced February 2022.
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Quantum phase modulation with acoustic cavities and quantum dots
Authors:
Poolad Imany,
Zixuan Wang,
Ryan A. Decrescent,
Robert C. Boutelle,
Corey A. Mcdonald,
Travis Autry,
Samuel Berweger,
Pavel Kabos,
Sae Woo Nam,
Richard P. Mirin,
Kevin L. Silverman
Abstract:
Fast, efficient, and low power modulation of light at microwave frequencies is crucial for chip-scale classical and quantum processing as well as for long-range networks of superconducting quantum processors. A successful approach to bridge the gap between microwave and optical photons has been to use intermediate platforms such as acoustic waves, which can couple efficiently to a variety of quant…
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Fast, efficient, and low power modulation of light at microwave frequencies is crucial for chip-scale classical and quantum processing as well as for long-range networks of superconducting quantum processors. A successful approach to bridge the gap between microwave and optical photons has been to use intermediate platforms such as acoustic waves, which can couple efficiently to a variety of quantum systems. Here, we use gigahertz-frequency focusing surface acoustic wave cavities on GaAs that are piezo-electrically coupled to superconducting circuits and parametrically coupled, via strain, to photons scattered from InAs quantum dots . We demonstrate strong modulation of single photons with a half-wave voltage as low as 44 mV, and subnatural modulation sideband linewidths. These demonstrations pave the way for efficient and low-noise transduction of quantum information between microwave and optical domains.
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Submitted 16 December, 2021;
originally announced December 2021.
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Laser-lithographically written micron-wide superconducting nanowire single-photon detectors
Authors:
Maximilian Protte,
Varun B. Verma,
Jan Philipp Höpker,
Richard P. Mirin,
Sae Woo Nam,
Tim J. Bartley
Abstract:
We demonstrate the fabrication of micron-wide tungsten silicide superconducting nanowire single-photon detectors on a silicon substrate using laser lithography. We show saturated internal detection efficiencies with wire widths from 0.59$μ$m to 1.43$μ$m under illumination at 1550nm. We demonstrate both straight wires, as well as meandered structures. Single-photon sensitivity is shown in devices u…
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We demonstrate the fabrication of micron-wide tungsten silicide superconducting nanowire single-photon detectors on a silicon substrate using laser lithography. We show saturated internal detection efficiencies with wire widths from 0.59$μ$m to 1.43$μ$m under illumination at 1550nm. We demonstrate both straight wires, as well as meandered structures. Single-photon sensitivity is shown in devices up to 4mm in length. Laser-lithographically written devices allow for fast and easy structuring of large areas while maintaining a saturated internal efficiency for wire width around 1$μ$m.
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Submitted 15 December, 2021;
originally announced December 2021.
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Impedance-matched differential superconducting nanowire detectors
Authors:
Marco Colangelo,
Boris Korzh,
Jason P. Allmaras,
Andrew D. Beyer,
Andrew S. Mueller,
Ryan M. Briggs,
Bruce Bumble,
Marcus Runyan,
Martin J. Stevens,
Adam N. McCaughan,
Di Zhu,
Stephen Smith,
Wolfgang Becker,
Lautaro Narváez,
Joshua C. Bienfang,
Simone Frasca,
Angel E. Velasco,
Cristián H. Peña,
Edward E. Ramirez,
Alexander B. Walter,
Ekkehart Schmidt,
Emma E. Wollman,
Maria Spiropulu,
Richard Mirin,
Sae Woo Nam
, et al. (2 additional authors not shown)
Abstract:
Superconducting nanowire single-photon detectors (SNSPDs) are the highest performing photon-counting technology in the near-infrared (NIR). Due to delay-line effects, large area SNSPDs typically trade-off timing resolution and detection efficiency. Here, we introduce a detector design based on transmission line engineering and differential readout for device-level signal conditioning, enabling a h…
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Superconducting nanowire single-photon detectors (SNSPDs) are the highest performing photon-counting technology in the near-infrared (NIR). Due to delay-line effects, large area SNSPDs typically trade-off timing resolution and detection efficiency. Here, we introduce a detector design based on transmission line engineering and differential readout for device-level signal conditioning, enabling a high system detection efficiency and a low detector jitter, simultaneously. To make our differential detectors compatible with single-ended time taggers, we also engineer analog differential-to-single-ended readout electronics, with minimal impact on the system timing resolution. Our niobium nitride differential SNSPDs achieve $47.3\,\% \pm 2.4\,\%$ system detection efficiency and sub-$10\,\mathrm{ps}$ system jitter at $775\,\mathrm{nm}$, while at $1550\,\mathrm{nm}$ they achieve $71.1\,\% \pm 3.7\,\%$ system detection efficiency and $13.1\,\mathrm{ps} \pm 0.4\,\mathrm{ps}$ system jitter. These detectors also achieve sub-100 ps timing response at one one-hundredth maximum level, $30.7\,\mathrm{ps} \pm 0.4\,\mathrm{ps}$ at $775\,\mathrm{nm}$ and $47.6\,\mathrm{ps} \pm 0.4\,\mathrm{ps}$ at $1550\,\mathrm{nm}$, enabling time-correlated single-photon counting with high dynamic range response functions. Furthermore, thanks to the differential impedance-matched design, our detectors exhibit delay-line imaging capabilities and photon-number resolution. The properties and high-performance metrics achieved by our system make it a versatile photon-detection solution for many scientific applications.
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Submitted 17 August, 2021;
originally announced August 2021.
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Demonstration that Einstein-Podolsky-Rosen steering requires more than one bit of faster-than-light information transmission
Authors:
Yu Xiang,
Michael D. Mazurek,
Joshua C. Bienfang,
Michael A. Wayne,
Carlos Abellán,
Waldimar Amaya,
Morgan W. Mitchell,
Richard P. Mirin,
Sae Woo Nam,
Qiongyi He,
Martin J. Stevens,
Lynden K. Shalm,
Howard M. Wiseman
Abstract:
Schrödinger held that a local quantum system has some objectively real quantum state and no other (hidden) properties. He therefore took the Einstein-Podolsky-Rosen (EPR) phenomenon, which he generalized and called `steering', to require nonlocal wavefunction collapse. Because this would entail faster-than-light (FTL) information transmission, he doubted that it would be seen experimentally. Here…
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Schrödinger held that a local quantum system has some objectively real quantum state and no other (hidden) properties. He therefore took the Einstein-Podolsky-Rosen (EPR) phenomenon, which he generalized and called `steering', to require nonlocal wavefunction collapse. Because this would entail faster-than-light (FTL) information transmission, he doubted that it would be seen experimentally. Here we report a demonstration of EPR steering with entangled photon pairs that puts--in Schrödinger's interpretation--a non-zero lower bound on the amount of FTL information transmission. We develop a family of $n$-setting loss-tolerant EPR-steering inequalities allowing for a size-$d$ classical message sent from Alice's laboratory to Bob's. For the case $n=3$ and $d=2$ (one bit) we observe a statistically significant violation. Our experiment closes the efficiency and locality loopholes, and we address the freedom-of-choice loophole by using quantum random number generators to independently choose Alice's and Bob's measurement basis settings. To close the efficiency and locality loopholes simultaneously, we introduce methods for quickly switching between three mutually unbiased measurement bases and for accurately characterizing the efficiency of detectors. From the space-time arrangement of our experiment, we can conclude that if the mechanism for the observed bipartite correlations is that Alice's measurement induces wave-function collapse of Bob's particle, then more than one bit of information must travel from Alice to Bob at more than three times the speed of light.
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Submitted 9 August, 2021; v1 submitted 27 May, 2021;
originally announced May 2021.
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Integrated superconducting nanowire single-photon detectors on titanium in-diffused lithium niobate waveguides
Authors:
Jan Philipp Höpker,
Varun B. Verma,
Maximilian Protte,
Raimund Ricken,
Viktor Quiring,
Christof Eigner,
Lena Ebers,
Manfred Hammer,
Jens Foerstner,
Christine Silberhorn,
Richard P. Mirin,
Sae Woo Nam,
Tim J. Bartley
Abstract:
We demonstrate the integration of amorphous tungsten silicide superconducting nanowire single-photon detectors on titanium in-diffused lithium niobate waveguides. We show proof-of-principle detection of evanescently-coupled photons of 1550nm wavelength using bidirectional waveguide coupling for two orthogonal polarization directions. We investigate the internal detection efficiency as well as dete…
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We demonstrate the integration of amorphous tungsten silicide superconducting nanowire single-photon detectors on titanium in-diffused lithium niobate waveguides. We show proof-of-principle detection of evanescently-coupled photons of 1550nm wavelength using bidirectional waveguide coupling for two orthogonal polarization directions. We investigate the internal detection efficiency as well as detector absorption using coupling-independent characterization measurements. Furthermore, we describe strategies to improve the yield and efficiency of these devices.
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Submitted 26 April, 2021;
originally announced April 2021.
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Single-photon detection in the mid-infrared up to 10 micron wavelength using tungsten silicide superconducting nanowire detectors
Authors:
V. B. Verma,
B. Korzh,
A. B. Walter,
A. E. Lita,
R. M. Briggs,
M. Colangelo,
Y. Zhai,
E. E. Wollman,
A. D. Beyer,
J. P. Allmaras,
B. Bumble,
H. Vora,
D. Zhu,
E. Schmidt,
K. K. Berggren,
R. P. Mirin,
S. W. Nam,
M. D. Shaw
Abstract:
We developed superconducting nanowire single-photon detectors (SNSPDs) based on tungsten silicide (WSi) that show saturated internal detection efficiency up to a wavelength of 10 um. These detectors are promising for applications in the mid-infrared requiring ultra-high gain stability, low dark counts, and high efficiency such as chemical sensing, LIDAR, dark matter searches and exoplanet spectros…
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We developed superconducting nanowire single-photon detectors (SNSPDs) based on tungsten silicide (WSi) that show saturated internal detection efficiency up to a wavelength of 10 um. These detectors are promising for applications in the mid-infrared requiring ultra-high gain stability, low dark counts, and high efficiency such as chemical sensing, LIDAR, dark matter searches and exoplanet spectroscopy.
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Submitted 17 December, 2020;
originally announced December 2020.
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Scalable multiphoton quantum metrology with neither pre- nor post-selected measurements
Authors:
Chenglong You,
Mingyuan Hong,
Peter Bierhorst,
Adriana E. Lita,
Scott Glancy,
Steve Kolthammer,
Emanuel Knill,
Sae Woo Nam,
Richard P. Mirin,
Omar S. Magana-Loaiza,
Thomas Gerrits
Abstract:
The quantum statistical fluctuations of the electromagnetic field establish a limit, known as the shot-noise limit, on the sensitivity of optical measurements performed with classical technologies. However, quantum technologies are not constrained by this shot-noise limit. In this regard, the possibility of using every photon produced by quantum sources of light to estimate small physical paramete…
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The quantum statistical fluctuations of the electromagnetic field establish a limit, known as the shot-noise limit, on the sensitivity of optical measurements performed with classical technologies. However, quantum technologies are not constrained by this shot-noise limit. In this regard, the possibility of using every photon produced by quantum sources of light to estimate small physical parameters, beyond the shot-noise limit, constitutes one of the main goals of quantum optics. Here we experimentally demonstrate a scalable protocol for quantum-enhanced optical phase estimation across a broad range of phases, with neither pre- nor post-selected measurements. This is achieved through the efficient design of a source of spontaneous parametric down-conversion in combination with photon-number-resolving detection. The robustness of two-mode squeezed vacuum states against loss allows us to outperform schemes based on N00N states, in which the loss of a single photon is enough to remove all phase information from a quantum state. In contrast to other schemes that rely on N00N states or conditional measurements, the sensitivity of our technique could be improved through the generation and detection of high-order photon pairs. This unique feature of our protocol makes it scalable. Our work is important for quantum technologies that rely on multiphoton interference such as quantum imaging, boson sampling and quantum networks.
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Submitted 24 June, 2021; v1 submitted 4 November, 2020;
originally announced November 2020.
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State Readout of a Trapped Ion Qubit Using a Trap-Integrated Superconducting Photon Detector
Authors:
S. L. Todaro,
V. B. Verma,
K. C. McCormick,
D. T. C. Allcock,
R. P. Mirin,
D. J. Wineland,
S. W. Nam,
A. C. Wilson,
D. Leibfried,
D. H. Slichter
Abstract:
We report high-fidelity state readout of a trapped ion qubit using a trap-integrated photon detector. We determine the hyperfine qubit state of a single $^9$Be$^+$ ion held in a surface-electrode rf ion trap by counting state-dependent ion fluorescence photons with a superconducting nanowire single-photon detector (SNSPD) fabricated into the trap structure. The average readout fidelity is 0.9991(1…
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We report high-fidelity state readout of a trapped ion qubit using a trap-integrated photon detector. We determine the hyperfine qubit state of a single $^9$Be$^+$ ion held in a surface-electrode rf ion trap by counting state-dependent ion fluorescence photons with a superconducting nanowire single-photon detector (SNSPD) fabricated into the trap structure. The average readout fidelity is 0.9991(1), with a mean readout duration of 46 $μ$s, and is limited by the polarization impurity of the readout laser beam and by off-resonant optical pum**. Because there are no intervening optical elements between the ion and the detector, we can use the ion fluorescence as a self-calibrated photon source to determine the detector quantum efficiency and its dependence on photon incidence angle and polarization.
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Submitted 31 July, 2020;
originally announced August 2020.
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Integrated-photonic characterization of single-photon detectors for use in neuromorphic synapses
Authors:
Sonia M. Buckley,
Alexander N. Tait,
Jeffrey Chiles,
Adam N. McCaughan,
Saeed Khan,
Richard P. Mirin,
Sae Woo Nam,
Jeffrey M. Shainline
Abstract:
We show several techniques for using integrated-photonic waveguide structures to simultaneously characterize multiple waveguide-integrated superconducting-nanowire detectors with a single fiber input. The first set of structures allows direct comparison of detector performance of waveguide-integrated detectors with various widths and lengths. The second type of demonstrated integrated-photonic str…
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We show several techniques for using integrated-photonic waveguide structures to simultaneously characterize multiple waveguide-integrated superconducting-nanowire detectors with a single fiber input. The first set of structures allows direct comparison of detector performance of waveguide-integrated detectors with various widths and lengths. The second type of demonstrated integrated-photonic structure allows us to achieve detection with a high dynamic range. This device allows a small number of detectors to count photons across many orders of magnitude in count rate. However, we find a stray light floor of -30 dB limits the dynamic range to three orders of magnitude. To assess the utility of the detectors for use in synapses in spiking neural systems, we measured the response with average incident photon numbers ranging from less than $10^{-3}$ to greater than $10$. The detector response is identical across this entire range, indicating that synaptic responses based on these detectors will be independent of the number of incident photons in a communication pulse. Such a binary response is ideal for communication in neural systems. We further demonstrate that the response has a linear dependence of output current pulse height on bias current with up to a factor of 1.7 tunability in pulse height. Throughout the work, we compare room-temperature measurements to cryogenic measurements. The agreement indicates room-temperature measurements can be used to determine important properties of the detectors.
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Submitted 2 November, 2020; v1 submitted 11 June, 2020;
originally announced June 2020.
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Superconducting microwire detectors with single-photon sensitivity in the near-infrared
Authors:
Jeff Chiles,
Sonia M. Buckley,
Adriana Lita,
Varun B. Verma,
Jason Allmaras,
Boris Korzh,
Matthew D. Shaw,
Jeffrey M. Shainline,
Richard P. Mirin,
Sae Woo Nam
Abstract:
We report on the fabrication and characterization of single-photon-sensitive WSi superconducting detectors with wire widths from 1 μm to 3 μm. The devices achieve saturated internal detection efficiency at 1.55 μm wavelength and exhibit maximum count rates in excess of 10^5 s^-1. We also investigate the material properties of the silicon-rich WSi films used for these devices. We find that many dev…
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We report on the fabrication and characterization of single-photon-sensitive WSi superconducting detectors with wire widths from 1 μm to 3 μm. The devices achieve saturated internal detection efficiency at 1.55 μm wavelength and exhibit maximum count rates in excess of 10^5 s^-1. We also investigate the material properties of the silicon-rich WSi films used for these devices. We find that many devices with active lengths of several hundred microns exhibit critical currents in excess of 50% of the depairing current. A meandered detector with 2.0 μm wire width is demonstrated over a surface area of 362x362 μm^2, showcasing the material and device quality achieved.
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Submitted 28 February, 2020;
originally announced February 2020.
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Low-loss, high-bandwidth fiber-to-chip coupling using capped adiabatic tapered fibers
Authors:
Saeed Khan,
Sonia M. Buckley,
Jeff Chiles,
Richard P. Mirin,
Sae Woo Nam,
Jeffrey M. Shainline
Abstract:
We demonstrate adiabatically tapered fibers terminating in sub-micron tips that are clad with a higher-index material for coupling to an on-chip waveguide. This cladding enables coupling to a high-index waveguide without losing light to the buried oxide. A technique to clad the tip of the tapered fiber with a higher-index polymer is introduced. Conventional tapered waveguides and forked tapered wa…
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We demonstrate adiabatically tapered fibers terminating in sub-micron tips that are clad with a higher-index material for coupling to an on-chip waveguide. This cladding enables coupling to a high-index waveguide without losing light to the buried oxide. A technique to clad the tip of the tapered fiber with a higher-index polymer is introduced. Conventional tapered waveguides and forked tapered waveguide structures are investigated for coupling from the clad fiber to the on-chip waveguide. We find the forked waveguide facilitates alignment and packaging, while the conventional taper leads to higher bandwidth. The insertion loss from a fiber through a forked coupler to a sub-micron silicon nitride waveguide is 1.1 dB and the 3 dB-bandwidth is 90 nm. The coupling loss in the packaged device is 1.3 dB. With a fiber coupled to a conventional tapered waveguide, the loss is 1.4 dB with a 3 dB bandwidth extending beyond the range of the measurement apparatus, estimated to exceed 250 nm.
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Submitted 21 January, 2020;
originally announced February 2020.
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Microresonator-enhanced, Waveguide-coupled Emission from Silicon Defect Centers for Superconducting Optoelectronic Networks
Authors:
A. N. Tait,
S. M. Buckley,
A. N. McCaughan,
J. T. Chiles,
S. Nam,
R. P. Mirin,
J. M. Shainline
Abstract:
Superconducting optoelectronic networks could achieve scales unmatched in hardware-based neuromorphic computing. After summarizing recent progress in this area, we report new results in cryogenic silicon photonic light sources, components central to these architectures.
Superconducting optoelectronic networks could achieve scales unmatched in hardware-based neuromorphic computing. After summarizing recent progress in this area, we report new results in cryogenic silicon photonic light sources, components central to these architectures.
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Submitted 3 December, 2019;
originally announced January 2020.
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Microring resonator-coupled photoluminescence from silicon W~centers
Authors:
A. N. Tait,
S. M. Buckley,
J. Chiles,
A. N. McCaughan,
S. Olson,
S. Papa Rao,
S. Nam,
R. P. Mirin,
J. M. Shainline
Abstract:
Defect centers are promising candidates for waveguide-integrated silicon light sources. We demonstrate microresonator- and waveguide-coupled photoluminescence from silicon W~centers. Microphotoluminescence measurements indicate wavelengths on-resonance with resonator modes are preferentially coupled to an adjacent waveguide. Quality factors of at least 5,300 are measured, and free spectral ranges…
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Defect centers are promising candidates for waveguide-integrated silicon light sources. We demonstrate microresonator- and waveguide-coupled photoluminescence from silicon W~centers. Microphotoluminescence measurements indicate wavelengths on-resonance with resonator modes are preferentially coupled to an adjacent waveguide. Quality factors of at least 5,300 are measured, and free spectral ranges closely match expectation. The W~center phonon sideband can be used as a spectral diagnostic for a broader range waveguide-based devices on cryogenic silicon photonic platforms.
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Submitted 14 January, 2020;
originally announced January 2020.
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Efficient second harmonic generation in nanophotonic GaAs-on-insulator waveguides
Authors:
Eric J. Stanton,
Jeff Chiles,
Nima Nader,
Galan Moody,
Nicolas Volet,
Lin Chang,
John E. Bowers,
Sae Woo Nam,
Richard P. Mirin
Abstract:
Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the intense nonlinear interactions of nanophotonic waveguides can be leveraged to meet these requirements. Here we demonstrate second harmonic generation (SHG) in Ga…
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Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the intense nonlinear interactions of nanophotonic waveguides can be leveraged to meet these requirements. Here we demonstrate second harmonic generation (SHG) in GaAs-on-insulator waveguides with unprecedented efficiency of 40 W$^{-1}$ for a single-pass device. This result is achieved by minimizing the propagation loss and optimizing phase-matching. We investigate surface-state absorption and design the waveguide geometry for modal phase-matching with tolerance to fabrication variation. A 2.0 $μ$m pump is converted to a 1.0 $μ$m signal in a length of 2.9 mm with a wide signal bandwidth of 148 GHz. Tunable and efficient operation is demonstrated over a temperature range of 45 $^{\circ}$C with a slope of 0.24 nm/$^{\circ}$C. Wafer-bonding between GaAs and SiO$_2$ is optimized to minimize waveguide loss, and the devices are fabricated on 76 mm wafers with high uniformity. We expect this device to enable fully integrated self-referenced frequency combs and high-rate entangled photon pair generation.
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Submitted 14 February, 2020; v1 submitted 27 December, 2019;
originally announced December 2019.
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Device-independent Randomness Expansion with Entangled Photons
Authors:
Lynden K. Shalm,
Yanbao Zhang,
Joshua C. Bienfang,
Collin Schlager,
Martin J. Stevens,
Michael D. Mazurek,
Carlos Abellán,
Waldimar Amaya,
Morgan W. Mitchell,
Mohammad A. Alhejji,
Honghao Fu,
Joel Ornstein,
Richard P. Mirin,
Sae Woo Nam,
Emanuel Knill
Abstract:
With the growing availability of experimental loophole-free Bell tests, it has become possible to implement a new class of device-independent random number generators whose output can be certified to be uniformly random without requiring a detailed model of the quantum devices used. However, all of these experiments require many input bits in order to certify a small number of output bits, and it…
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With the growing availability of experimental loophole-free Bell tests, it has become possible to implement a new class of device-independent random number generators whose output can be certified to be uniformly random without requiring a detailed model of the quantum devices used. However, all of these experiments require many input bits in order to certify a small number of output bits, and it is an outstanding challenge to develop a system that generates more randomness than is consumed. Here, we devise a device-independent spot-checking protocol that consumes only uniform bits without requiring any additional bits with a specific bias. Implemented with a photonic loophole-free Bell test, we can produce 24% more certified output bits (1,181,264,237) than consumed input bits (953,301,640). The experiment ran for 91.0 hours, creating randomness at an average rate of 3606 bits/s with a soundness error bounded by $5.7\times 10^{-7}$ in the presence of classical side information. Our system will allow for greater trust in public sources of randomness, such as randomness beacons, and may one day enable high-quality private sources of randomness as the device footprint shrinks.
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Submitted 20 October, 2021; v1 submitted 23 December, 2019;
originally announced December 2019.
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Optimization of photoluminescence from W centers in silicon-on-insulator
Authors:
Sonia M. Buckley,
Alex N. Tait,
Galan Moody,
Stephen Olson,
Joshua Herman,
Kevin L. Silverman,
Satyavolu Papa Rao,
Sae Woo Nam,
Richard P. Mirin,
Jeffrey M. Shainline
Abstract:
W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $μ$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs). Here we optimize the implant energy, fluence and anneal conditions to maximize the photoluminescence intensity for W centers implanted in silicon-on-insulator, a su…
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W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $μ$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs). Here we optimize the implant energy, fluence and anneal conditions to maximize the photoluminescence intensity for W centers implanted in silicon-on-insulator, a substrate suitable for waveguide-integrated devices. After optimization, we observe near two orders of magnitude improvement in photoluminescence intensity relative to the conditions with the stop** range of the implanted ions at the center of the silicon device layer. The previously demonstrated waveguide-integrated LED used implant conditions with the stop** range at the center of this layer. We further show that such light sources can be manufactured at the 300-mm scale by demonstrating photoluminescence of similar intensity from 300 mm silicon-on-insulator wafers. The luminescence uniformity across the entire wafer is within the measurement error.
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Submitted 19 May, 2020; v1 submitted 4 November, 2019;
originally announced November 2019.
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A kilopixel array of superconducting nanowire single-photon detectors
Authors:
Emma E. Wollman,
Varun B. Verma,
Adriana E. Lita,
William H. Farr,
Matthew D. Shaw,
Richard P. Mirin,
Sae Woo Nam
Abstract:
We present a 1024-element imaging array of superconducting nanowire single photon detectors (SNSPDs) using a 32x32 row-column multiplexing architecture. Large arrays are desirable for applications such as imaging, spectroscopy, or particle detection.
We present a 1024-element imaging array of superconducting nanowire single photon detectors (SNSPDs) using a 32x32 row-column multiplexing architecture. Large arrays are desirable for applications such as imaging, spectroscopy, or particle detection.
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Submitted 27 August, 2019;
originally announced August 2019.
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On-chip polarization rotator for type I second harmonic generation
Authors:
Eric J. Stanton,
Lin Chang,
Weiqiang Xie,
Aditya Malik,
Jon Peters,
Jeff Chiles,
Nima Nader,
Gabriele Navickaite,
Davide Sacchetto,
Michael Zervas,
Kartik Srinivasan,
John E. Bowers,
Scott B. Papp,
Sae Woo Nam,
Richard P. Mirin
Abstract:
We demonstrate a polarization rotator integrated at the output of a GaAs waveguide producing type I second harmonic generation (SHG). Form-birefringent phase matching between the pump fundamental transverse electric (TE) mode near 2.0 $μ$m wavelength and the signal fundamental transverse magnetic (TM) mode efficiently generates light at 1.0 $μ$m wavelength. A SiN waveguide layer is integrated with…
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We demonstrate a polarization rotator integrated at the output of a GaAs waveguide producing type I second harmonic generation (SHG). Form-birefringent phase matching between the pump fundamental transverse electric (TE) mode near 2.0 $μ$m wavelength and the signal fundamental transverse magnetic (TM) mode efficiently generates light at 1.0 $μ$m wavelength. A SiN waveguide layer is integrated with the SHG device to form a multi-functional photonic integrated circuit. The polarization rotator couples light between the two layers and rotates the polarization from TM to TE or from TE to TM. With a TE-polarized 2.0 $μ$m pump, type I SHG is demonstrated with the signal rotated to TE polarization. Passive transmission near 1.0 $μ$m wavelength shows ~80 % polarization rotation across a broad bandwidth of ~100 nm. By rotating the signal polarization to match that of the pump, this SHG device demonstrates a critical component of an integrated self-referenced octave-spanning frequency comb. This device is expected to provide crucial functionality as part of a fully integrated optical frequency synthesizer with resolution of less than one part in 10$^{14}$.
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Submitted 31 July, 2019;
originally announced July 2019.
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Nonlinear silicon waveguides generating broadband, spectrally engineered frequency combs spanning 2.0-8.5 um
Authors:
Nima Nader,
Abijith Kowligy,
Jeff Chiles,
Eric J. Stanton,
Henry Timmers,
Alexander J. Lind,
Flavio C. Cruz,
Daniel M. Lesko,
Kimberly . Briggman,
Sae Woo Nam,
Scott A. Diddams,
Richard P. Mirin
Abstract:
Nanophotonic waveguides with sub-wavelength mode confinement and engineered dispersion profiles are an excellent platform for application-tailored nonlinear optical interactions at low pulse energies. Here, we present fully air clad suspended-silicon waveguides for infrared frequency comb generation with optical bandwidth limited only by the silicon transparency. The achieved spectra are lithograp…
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Nanophotonic waveguides with sub-wavelength mode confinement and engineered dispersion profiles are an excellent platform for application-tailored nonlinear optical interactions at low pulse energies. Here, we present fully air clad suspended-silicon waveguides for infrared frequency comb generation with optical bandwidth limited only by the silicon transparency. The achieved spectra are lithographically tailored to span 2.1 octaves in the mid-infrared (2.0-8.5 um or 1170--5000 cm-1) when pumped at 3.10 um with 100 pJ pulses. Novel fork-shaped couplers provide efficient input coupling with only 1.5 dB loss. The coherence, brightness, and the stability of the generated light are highlighted in a dual frequency comb setup in which individual comb-lines are resolved with 30 dB extinction ratio and 100 MHz spacing in the wavelength range of 4.8-8.5 um (2100-1170 cm-1). These sources are used for broadband gas- and liquid-phase dual-comb spectroscopy with 100 MHz comb-line resolution. We achieve a peak spectral signal-to-noise ratio of 10 Hz^0.5 across a simultaneous bandwidth containing 112,200 comb-lines. These results provide a pathway to further integration with the develo** high repetition rate frequency comb lasers for compact sensors with applications in chip-based chemical analysis and spectroscopy.
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Submitted 18 June, 2019;
originally announced June 2019.
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Tunable quantum beat of single photons enabled by nonlinear nanophotonics
Authors:
Qing Li,
Anshuman Singh,
Xiyuan Lu,
John Lawall,
Varun Verma,
Richard Mirin,
Sae Woo Nam,
Kartik Srinivasan
Abstract:
We demonstrate the tunable quantum beat of single photons through the co-development of core nonlinear nanophotonic technologies for frequency-domain manipulation of quantum states in a common physical platform. Spontaneous four-wave mixing in a nonlinear resonator is used to produce non-degenerate, quantum-correlated photon pairs. One photon from each pair is then frequency shifted, without degra…
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We demonstrate the tunable quantum beat of single photons through the co-development of core nonlinear nanophotonic technologies for frequency-domain manipulation of quantum states in a common physical platform. Spontaneous four-wave mixing in a nonlinear resonator is used to produce non-degenerate, quantum-correlated photon pairs. One photon from each pair is then frequency shifted, without degradation of photon statistics, using four-wave mixing Bragg scattering in a second nonlinear resonator. Fine tuning of the applied frequency shift enables tunable quantum interference of the two photons as they are im**ed on a beamsplitter, with an oscillating signature that depends on their frequency difference. Our work showcases the potential of nonlinear nanophotonic devices as a valuable resource for photonic quantum information science.
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Submitted 5 May, 2019;
originally announced May 2019.
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Multi-functional integrated photonics in the mid-infrared with suspended AlGaAs on silicon
Authors:
Jeff Chiles,
Nima Nader,
Eric J. Stanton,
Daniel Herman,
Galan Moody,
Jiangang Zhu,
J. Connor Skehan,
Biswarup Guha,
Abijith Kowligy,
Juliet T. Gopinath,
Kartik Srinivasan,
Scott A. Diddams,
Ian Coddington,
Nathan R. Newbury,
Jeffrey M. Shainline,
Sae Woo Nam,
Richard P. Mirin
Abstract:
The microscale integration of mid- and longwave-infrared photonics could enable the development of fieldable, robust chemical sensors, as well as highly efficient infrared frequency converters. However, such technology would be defined by the choice of material platform, which immediately determines the strength and types of optical nonlinearities available, the optical transparency window, modal…
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The microscale integration of mid- and longwave-infrared photonics could enable the development of fieldable, robust chemical sensors, as well as highly efficient infrared frequency converters. However, such technology would be defined by the choice of material platform, which immediately determines the strength and types of optical nonlinearities available, the optical transparency window, modal confinement, and physical robustness. In this work, we demonstrate a new platform, suspended AlGaAs waveguides integrated on silicon, providing excellent performance in all of these metrics. We demonstrate low propagation losses within a span of nearly two octaves (1.26 to 4.6 $μ$m) with exemplary performance of 0.45 dB/cm at $λ= 2.4$ $μ$m. We exploit the high nonlinearity of this platform to demonstrate 1560 nm-pumped second-harmonic generation and octave-spanning supercontinuum reaching out to 2.3 $μ$m with 3.4 pJ pump pulse energy. With mid-IR pum**, we generate supercontinuum spanning from 2.3 to 6.5 $μ$m. Finally, we demonstrate the versatility of the platform with mid-infrared passive devices such as low-loss 10 $μ$m-radius bends, compact power splitters with 96 $\pm$ 1% efficiency and edge couplers with 3.0 $\pm$ 0.1 dB loss. This platform has strong potential for multi-functional integrated photonic systems in the mid-IR.
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Submitted 3 May, 2019;
originally announced May 2019.
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Quantum Frequency Conversion of a Quantum Dot Single-Photon Source on a Nanophotonic Chip
Authors:
Anshuman Singh,
Qing Li,
Shunfa Liu,
Ying Yu,
Xiyuan Lu,
Christian Schneider,
Sven Höfling,
John Lawall,
Varun Verma,
Richard Mirin,
Sae Woo Nam,
** Liu,
Kartik Srinivasan
Abstract:
Single self-assembled InAs/GaAs quantum dots are promising bright sources of indistinguishable photons for quantum information science. However, their distribution in emission wavelength, due to inhomogeneous broadening inherent to their growth, has limited the ability to create multiple identical sources. Quantum frequency conversion can overcome this issue, particularly if implemented using scal…
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Single self-assembled InAs/GaAs quantum dots are promising bright sources of indistinguishable photons for quantum information science. However, their distribution in emission wavelength, due to inhomogeneous broadening inherent to their growth, has limited the ability to create multiple identical sources. Quantum frequency conversion can overcome this issue, particularly if implemented using scalable chip-integrated technologies. Here, we report the first demonstration of quantum frequency conversion of a quantum dot single-photon source on a silicon nanophotonic chip. Single photons from a quantum dot in a micropillar cavity are shifted in wavelength with an on-chip conversion efficiency of approximately 12 %, limited by the linewidth of the quantum dot photons. The intensity autocorrelation function g(2)(tau) for the frequency-converted light is antibunched with g(2)(0) = 0.290 +/- 0.030, compared to the before-conversion value g(2)(0) = 0.080 +/- 0.003. We demonstrate the suitability of our frequency conversion interface as a resource for quantum dot sources by characterizing its effectiveness across a wide span of input wavelengths (840 nm to 980 nm), and its ability to achieve tunable wavelength shifts difficult to obtain by other approaches.
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Submitted 26 April, 2019;
originally announced April 2019.
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THz Superradiance from a GaAs: ErAs Quantum Dot Array at Room Temperature
Authors:
W-D. Zhang,
E. R. Brown,
A. Mingardi,
R. P. Mirin,
N. Jahed,
D. Saeedkia
Abstract:
We report experimental evidence that an ErAs quantum-dot array in a GaAs matrix under 1550 nm pulsed excitation produces cooperative spontaneous emission-Dicke superradiance-in the terahertz frequency region at room temperature.
We report experimental evidence that an ErAs quantum-dot array in a GaAs matrix under 1550 nm pulsed excitation produces cooperative spontaneous emission-Dicke superradiance-in the terahertz frequency region at room temperature.
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Submitted 4 April, 2019;
originally announced April 2019.
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Multiphoton Quantum-State Engineering using Conditional Measurements
Authors:
Omar S. Magana-Loaiza,
Roberto de J. Leon-Montiel,
Armando Perez-Leija,
Alfred B. URen,
Chenglong You,
Kurt Busch,
Adriana E. Lita,
Sae Woo Nam,
Richard P. Mirin,
Thomas Gerrits
Abstract:
The quantum theory of electromagnetic radiation predicts characteristic statistical fluctuations for light sources as diverse as sunlight, laser radiation and molecule fluorescence. Indeed, these underlying statistical fluctuations of light are associated with the fundamental physical processes behind their generation. In this contribution, we demonstrate that the manipulation of the quantum elect…
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The quantum theory of electromagnetic radiation predicts characteristic statistical fluctuations for light sources as diverse as sunlight, laser radiation and molecule fluorescence. Indeed, these underlying statistical fluctuations of light are associated with the fundamental physical processes behind their generation. In this contribution, we demonstrate that the manipulation of the quantum electromagnetic fluctuations of a pair of vacuum states leads to a novel family of quantum-correlated multiphoton states with tunable mean photon numbers and degree of correlation. Our technique relies on the use of conditional measurements to engineer the excitation mode of the field through the simultaneous subtraction of photons from two-mode squeezed vacuum states. The experimental generation of multiphoton states with quantum correlations by means of photon subtraction unveils novel mechanisms to control fundamental properties of light. As a remarkable example, we demonstrate the engineering of a quantum correlated state of light, with nearly Poissonian photon statistics, that constitutes the first step towards the generation of entangled lasers. Our technique enables a robust protocol to prepare quantum states with multiple photons in high-dimensional spaces and, as such, it constitutes a novel platform for exploring quantum phenomena in mesoscopic systems.
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Submitted 1 January, 2019;
originally announced January 2019.
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Integrated transition edge sensors on lithium niobate waveguides
Authors:
Jan Philipp Höpker,
Thomas Gerrits,
Adriana Lita,
Stephan Krapick,
Harald Herrmann,
Raimund Ricken,
Viktor Quiring,
Richard Mirin,
Sae Woo Nam,
Christine Silberhorn,
Tim J. Bartley
Abstract:
We show the proof-of-principle detection of light at 1550 nm coupled evanescently from a titanium in-diffused lithium niobate waveguide to a superconducting transition edge sensor. The coupling efficiency strongly depends on the polarization, the overlap between the evanescent field, and the detector structure. We experimentally demonstrate polarization sensitivity of this coupling as well as phot…
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We show the proof-of-principle detection of light at 1550 nm coupled evanescently from a titanium in-diffused lithium niobate waveguide to a superconducting transition edge sensor. The coupling efficiency strongly depends on the polarization, the overlap between the evanescent field, and the detector structure. We experimentally demonstrate polarization sensitivity of this coupling as well as photon-number resolution of the integrated detector. The combination of transition edge sensors and lithium niobate waveguides can open the field for a variety of new quantum optics experiments.
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Submitted 20 December, 2018;
originally announced December 2018.
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Microsecond Valley Lifetime of Defect-Bound Excitons in Monolayer WSe$_2$
Authors:
Galan Moody,
Kha Tran,
Xiaobo Lu,
Travis Autry,
James M. Fraser,
Richard P. Mirin,
Li Yang,
Xiaoqin Li,
Kevin L. Silverman
Abstract:
In atomically thin two-dimensional semiconductors such as transition metal dichalcogenides (TMDs), controlling the density and type of defects promises to be an effective approach for engineering light-matter interactions. We demonstrate that electron-beam irradiation is a simple tool for selectively introducing defect-bound exciton states associated with chalcogen vacancies in TMDs. Our first-pri…
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In atomically thin two-dimensional semiconductors such as transition metal dichalcogenides (TMDs), controlling the density and type of defects promises to be an effective approach for engineering light-matter interactions. We demonstrate that electron-beam irradiation is a simple tool for selectively introducing defect-bound exciton states associated with chalcogen vacancies in TMDs. Our first-principles calculations and time-resolved spectroscopy measurements of monolayer WSe2 reveal that these defect-bound excitons exhibit exceptional optical properties including a recombination lifetime approaching 200 ns and a valley lifetime longer than 1 $μ$s. The ability to engineer the crystal lattice through electron irradiation provides a new approach for tailoring the optical response of TMDs for photonics, quantum optics, and valleytronics applications.
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Submitted 10 July, 2018;
originally announced July 2018.
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Design, fabrication and metrology of 10$\,\times\,$100 multi-planar integrated photonic routing manifolds for neural networks
Authors:
Jeff Chiles,
Sonia M. Buckley,
Sae Woo Nam,
Richard P. Mirin,
Jeffrey M. Shainline
Abstract:
We design, fabricate and characterize integrated photonic routing manifolds with 10 inputs and 100 outputs using two vertically integrated planes of silicon nitride waveguides. We analyze manifolds via top-view camera imaging. This measurement technique allows the rapid acquisition of hundreds of precise transmission measurements. We demonstrate manifolds with uniform and Gaussian power distributi…
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We design, fabricate and characterize integrated photonic routing manifolds with 10 inputs and 100 outputs using two vertically integrated planes of silicon nitride waveguides. We analyze manifolds via top-view camera imaging. This measurement technique allows the rapid acquisition of hundreds of precise transmission measurements. We demonstrate manifolds with uniform and Gaussian power distribution patterns with mean power output errors (averaged over 10 sets of 10 inputs) of 0.7 and 0.9 dB, respectively, establishing this as a viable architecture for precision light distribution on-chip. We also assess the performance of the passive photonic elements comprising the system via self-referenced test structures, including high-dynamic-range beam taps, waveguide cutback structures, and waveguide crossing arrays.
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Submitted 9 May, 2018;
originally announced May 2018.
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Challenging local realism with human choices
Authors:
The BIG Bell Test Collaboration,
C. Abellán,
A. Acín,
A. Alarcón,
O. Alibart,
C. K. Andersen,
F. Andreoli,
A. Beckert,
F. A. Beduini,
A. Bendersky,
M. Bentivegna,
P. Bierhorst,
D. Burchardt,
A. Cabello,
J. Cariñe,
S. Carrasco,
G. Carvacho,
D. Cavalcanti,
R. Chaves,
J. Cortés-Vega,
A. Cuevas,
A. Delgado,
H. de Riedmatten,
C. Eichler,
P. Farrera
, et al. (83 additional authors not shown)
Abstract:
A Bell test is a randomized trial that compares experimental observations against the philosophical worldview of local realism. A Bell test requires spatially distributed entanglement, fast and high-efficiency detection and unpredictable measurement settings. Although technology can satisfy the first two of these requirements, the use of physical devices to choose settings in a Bell test involves…
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A Bell test is a randomized trial that compares experimental observations against the philosophical worldview of local realism. A Bell test requires spatially distributed entanglement, fast and high-efficiency detection and unpredictable measurement settings. Although technology can satisfy the first two of these requirements, the use of physical devices to choose settings in a Bell test involves making assumptions about the physics that one aims to test. Bell himself noted this weakness in using physical setting choices and argued that human `free will' could be used rigorously to ensure unpredictability in Bell tests. Here we report a set of local-realism tests using human choices, which avoids assumptions about predictability in physics. We recruited about 100,000 human participants to play an online video game that incentivizes fast, sustained input of unpredictable selections and illustrates Bell-test methodology. The participants generated 97,347,490 binary choices, which were directed via a scalable web platform to 12 laboratories on five continents, where 13 experiments tested local realism using photons, single atoms, atomic ensembles, and superconducting devices. Over a 12-hour period on 30 November 2016, participants worldwide provided a sustained data flow of over 1,000 bits per second to the experiments, which used different human-generated data to choose each measurement setting. The observed correlations strongly contradict local realism and other realistic positions in bipartite and tripartite scenarios. Project outcomes include closing the `freedom-of-choice loophole' (the possibility that the setting choices are influenced by `hidden variables' to correlate with the particle properties), the utilization of video-game methods for rapid collection of human generated randomness, and the use of networking techniques for global participation in experimental science.
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Submitted 9 November, 2018; v1 submitted 11 May, 2018;
originally announced May 2018.
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Superconducting Optoelectronic Neurons II: Receiver Circuits
Authors:
Jeffrey M. Shainline,
Sonia M. Buckley,
Adam N. McCaughan,
Manuel Castellanos-Beltran,
Christine A. Donnelly,
Michael L. Schneider,
Richard P. Mirin,
Sae Woo Nam
Abstract:
Circuits using superconducting single-photon detectors and Josephson junctions to perform signal reception, synaptic weighting, and integration are investigated. The circuits convert photon-detection events into flux quanta, the number of which is determined by the synaptic weight. The current from many synaptic connections is inductively coupled to a superconducting loop that implements the neuro…
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Circuits using superconducting single-photon detectors and Josephson junctions to perform signal reception, synaptic weighting, and integration are investigated. The circuits convert photon-detection events into flux quanta, the number of which is determined by the synaptic weight. The current from many synaptic connections is inductively coupled to a superconducting loop that implements the neuronal threshold operation. Designs are presented for synapses and neurons that perform integration as well as detect coincidence events for temporal coding. Both excitatory and inhibitory connections are demonstrated. It is shown that a neuron with a single integration loop can receive input from 1000 such synaptic connections, and neurons of similar design could employ many loops for dendritic processing.
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Submitted 15 May, 2018; v1 submitted 7 May, 2018;
originally announced May 2018.
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Circuit designs for superconducting optoelectronic loop neurons
Authors:
Jeffrey M. Shainline,
Sonia M. Buckley,
Adam N. McCaughan,
Jeff Chiles,
Richard P. Mirin,
Sae Woo Nam
Abstract:
Optical communication achieves high fanout and short delay advantageous for information integration in neural systems. Superconducting detectors enable signaling with single photons for maximal energy efficiency. We present designs of superconducting optoelectronic neurons based on superconducting single-photon detectors, Josephson junctions, semiconductor light sources, and multi-planar dielectri…
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Optical communication achieves high fanout and short delay advantageous for information integration in neural systems. Superconducting detectors enable signaling with single photons for maximal energy efficiency. We present designs of superconducting optoelectronic neurons based on superconducting single-photon detectors, Josephson junctions, semiconductor light sources, and multi-planar dielectric waveguides. These circuits achieve complex synaptic and neuronal functions with high energy efficiency, leveraging the strengths of light for communication and superconducting electronics for computation. The neurons send few-photon signals to synaptic connections. These signals communicate neuronal firing events as well as update synaptic weights. Spike-timing-dependent plasticity is implemented with a single photon triggering each step of the process. Microscale light-emitting diodes and waveguide networks enable connectivity from a neuron to thousands of synaptic connections, and the use of light for communication enables synchronization of neurons across an area limited only by the distance light can travel within the period of a network oscillation. Experimentally, each of the requisite circuit elements has been demonstrated, yet a hardware platform combining them all has not been attempted. Compared to digital logic or quantum computing, device tolerances are relaxed. For this neural application, optical sources providing incoherent pulses with 10,000 photons produced with efficiency of 10$^{-3}$ operating at 20\,MHz at 4.2\,K are sufficient to enable a massively scalable neural computing platform with connectivity comparable to the brain and thirty thousand times higher speed.
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Submitted 7 September, 2018; v1 submitted 4 May, 2018;
originally announced May 2018.
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Superconducting Optoelectronic Neurons V: Networks and Scaling
Authors:
Jeffrey M. Shainline,
Jeff Chiles,
Sonia M. Buckley,
Adam N. McCaughan,
Richard P. Mirin,
Sae Woo Nam
Abstract:
Networks of superconducting optoelectronic neurons are investigated for their near-term technological potential and long-term physical limitations. Networks with short average path length, high clustering coefficient, and power-law degree distribution are designed using a growth model that assigns connections between new and existing nodes based on spatial distance as well as degree of existing no…
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Networks of superconducting optoelectronic neurons are investigated for their near-term technological potential and long-term physical limitations. Networks with short average path length, high clustering coefficient, and power-law degree distribution are designed using a growth model that assigns connections between new and existing nodes based on spatial distance as well as degree of existing nodes. The network construction algorithm is scalable to arbitrary levels of network hierarchy and achieves systems with fractal spatial properties and efficient wiring. By modeling the physical size of superconducting optoelectronic neurons, we calculate the area of these networks. A system with 8100 neurons and 330,430 total synapses will fit on a 1\,cm $\times$ 1\,cm die. Systems of millions of neurons with hundreds of millions of synapses will fit on a 300\,mm wafer. For multi-wafer assemblies, communication at light speed enables a neuronal pool the size of a large data center comprising 100 trillion neurons with coherent oscillations at 1\,MHz. Assuming a power law frequency distribution, as is necessary for self-organized criticality, we calculate the power consumption of the networks. We find the use of single photons for communication and superconducting circuits for computation leads to power density low enough to be cooled by liquid $^4$He for networks of any scale.
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Submitted 15 May, 2018; v1 submitted 4 May, 2018;
originally announced May 2018.
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Superconducting Optoelectronic Neurons IV: Transmitter Circuits
Authors:
Jeffrey M. Shainline,
Adam N. McCaughan,
Sonia M. Buckley,
Richard P. Mirin,
Sae Woo Nam
Abstract:
A superconducting optoelectronic neuron will produce a small current pulse upon reaching threshold. We present an amplifier chain that converts this small current pulse to a voltage pulse sufficient to produce light from a semiconductor diode. This light is the signal used to communicate between neurons in the network. The amplifier chain comprises a thresholding Josephson junction, a relaxation o…
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A superconducting optoelectronic neuron will produce a small current pulse upon reaching threshold. We present an amplifier chain that converts this small current pulse to a voltage pulse sufficient to produce light from a semiconductor diode. This light is the signal used to communicate between neurons in the network. The amplifier chain comprises a thresholding Josephson junction, a relaxation oscillator Josephson junction, a superconducting thin-film current-gated current amplifier, and a superconducting thin-film current-gated voltage amplifier. We analyze the performance of the elements in the amplifier chain in the time domain to calculate the energy consumption per photon created for several values of light-emitting diode capacitance and efficiency. The speed of the amplification sequence allows neuronal firing up to at least 20\,MHz with power density low enough to be cooled easily with standard $^4$He cryogenic systems operating at 4.2\,K.
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Submitted 8 May, 2018; v1 submitted 4 May, 2018;
originally announced May 2018.
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Superconducting Optoelectronic Neurons III: Synaptic Plasticity
Authors:
Jeffrey M. Shainline,
Adam N. McCaughan,
Sonia M. Buckley,
Christine A. Donnelly,
Manuel Castellanos-Beltran,
Michael L. Schneider,
Richard P. Mirin,
Sae Woo Nam
Abstract:
As a means of dynamically reconfiguring the synaptic weight of a superconducting optoelectronic loop neuron, a superconducting flux storage loop is inductively coupled to the synaptic current bias of the neuron. A standard flux memory cell is used to achieve a binary synapse, and loops capable of storing many flux quanta are used to enact multi-stable synapses. Circuits are designed to implement s…
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As a means of dynamically reconfiguring the synaptic weight of a superconducting optoelectronic loop neuron, a superconducting flux storage loop is inductively coupled to the synaptic current bias of the neuron. A standard flux memory cell is used to achieve a binary synapse, and loops capable of storing many flux quanta are used to enact multi-stable synapses. Circuits are designed to implement supervised learning wherein current pulses add or remove flux from the loop to strengthen or weaken the synaptic weight. Designs are presented for circuits with hundreds of intermediate synaptic weights between minimum and maximum strengths. Circuits for implementing unsupervised learning are modeled using two photons to strengthen and two photons to weaken the synaptic weight via Hebbian and anti-Hebbian learning rules, and techniques are proposed to control the learning rate. Implementation of short-term plasticity, homeostatic plasticity, and metaplasticity in loop neurons is discussed.
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Submitted 3 July, 2018; v1 submitted 4 May, 2018;
originally announced May 2018.
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Superconducting Optoelectronic Neurons I: General Principles
Authors:
Jeffrey M. Shainline,
Sonia M. Buckley,
Adam N. McCaughan,
Jeff Chiles,
Richard P. Mirin,
Sae Woo Nam
Abstract:
The design of neural hardware is informed by the prominence of differentiated processing and information integration in cognitive systems. The central role of communication leads to the principal assumption of the hardware platform: signals between neurons should be optical to enable fanout and communication with minimal delay. The requirement of energy efficiency leads to the utilization of super…
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The design of neural hardware is informed by the prominence of differentiated processing and information integration in cognitive systems. The central role of communication leads to the principal assumption of the hardware platform: signals between neurons should be optical to enable fanout and communication with minimal delay. The requirement of energy efficiency leads to the utilization of superconducting detectors to receive single-photon signals. We discuss the potential of superconducting optoelectronic hardware to achieve the spatial and temporal information integration advantageous for cognitive processing, and we consider physical scaling limits based on light-speed communication. We introduce the superconducting optoelectronic neurons and networks that are the subject of the subsequent papers in this series.
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Submitted 24 May, 2018; v1 submitted 4 May, 2018;
originally announced May 2018.
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Demonstrating sub-3 ps temporal resolution in a superconducting nanowire single-photon detector
Authors:
B. A. Korzh,
Q-Y. Zhao,
S. Frasca,
J. P. Allmaras,
T. M. Autry,
E. A. Bersin,
M. Colangelo,
G. M. Crouch,
A. E. Dane,
T. Gerrits,
F. Marsili,
G. Moody,
E. Ramirez,
J. D. Rezac,
M. J. Stevens,
E. E. Wollman,
D. Zhu,
P. D. Hale,
K. L. Silverman,
R. P. Mirin,
S. W. Nam,
M. D. Shaw,
K. K. Berggren
Abstract:
Improving the temporal resolution of single photon detectors has an impact on many applications, such as increased data rates and transmission distances for both classical and quantum optical communication systems, higher spatial resolution in laser ranging and observation of shorter-lived fluorophores in biomedical imaging. In recent years, superconducting nanowire single-photon detectors (SNSPDs…
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Improving the temporal resolution of single photon detectors has an impact on many applications, such as increased data rates and transmission distances for both classical and quantum optical communication systems, higher spatial resolution in laser ranging and observation of shorter-lived fluorophores in biomedical imaging. In recent years, superconducting nanowire single-photon detectors (SNSPDs) have emerged as the highest efficiency time-resolving single-photon counting detectors available in the near infrared. As the detection mechanism in SNSPDs occurs on picosecond time scales, SNSPDs have been demonstrated with exquisite temporal resolution below 15 ps. We reduce this value to 2.7$\pm$0.2 ps at 400 nm and 4.6$\pm$0.2 ps at 1550 nm, using a specialized niobium nitride (NbN) SNSPD. The observed photon-energy dependence of the temporal resolution and detection latency suggests that intrinsic effects make a significant contribution.
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Submitted 18 April, 2018;
originally announced April 2018.
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Deuterated silicon nitride photonic devices for broadband optical frequency comb generation
Authors:
Jeff Chiles,
Nima Nader,
Daniel D. Hickstein,
Su Peng Yu,
Travis Crain Briles,
David Carlson,
Hojoong Jung,
Jeffrey M. Shainline,
Scott Diddams,
Scott B. Papp,
Sae Woo Nam,
Richard P. Mirin
Abstract:
We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\times 10^6 $ at 1552 nm, and $>1.2\times 10^6$ throughout $λ$ = 1510 -- 1600 nm,…
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We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\times 10^6 $ at 1552 nm, and $>1.2\times 10^6$ throughout $λ$ = 1510 -- 1600 nm, without annealing or stress management. We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900-nm-bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.
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Submitted 3 February, 2018;
originally announced February 2018.
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Kondo-Resonance Mediated Metal-Insulator Transition in GaAs Embedded with Erbium Arsenide Quantum Dots
Authors:
W-D. Zhang,
E. R. Brown,
A. D. Feldman,
T. E. Harvey,
R. P. Mirin
Abstract:
We report anomalous critical transport behavior in a GaAs structure containing a dense array of ErAs quantum dots. The structure displays a voltage (electric field)-controlled insulator-to-metal transition and strong hysteresis in the Kondo-like current-vs-temperature characteristic, with critical temperatures as high as 50 K. We attribute this behavior to a strong distributed Kondo resonance betw…
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We report anomalous critical transport behavior in a GaAs structure containing a dense array of ErAs quantum dots. The structure displays a voltage (electric field)-controlled insulator-to-metal transition and strong hysteresis in the Kondo-like current-vs-temperature characteristic, with critical temperatures as high as 50 K. We attribute this behavior to a strong distributed Kondo resonance between the quantum dots after the Coulomb blockade of the array is lifted. This is consistent with a high sensitivity of the phase transition to a small external magnetic field that we have observed in the Voigt configuration, and a phenomenological model based on the RKKY interaction within a quantum dot and the cooperative Kondo-resonance amongst quantum dots.
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Submitted 3 November, 2017;
originally announced November 2017.
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Direct observation of nanofabrication influence on the optical properties of single self-assembled InAs/GaAs quantum dots
Authors:
** Liu,
Kumarasiri Konthasinghe,
Marcelo Davanco,
John Lawall,
Vikas Anant,
Varun Verma,
Richard Mirin,
Sae Woo Nam,
** Dong Song,
Ben Ma,
Ze Sheng Chen,
Hai Qiao Ni,
Zhi Chuan Niu,
Kartik Srinivasan
Abstract:
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optic…
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Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optical modes. An open question is the extent to which such nanofabrication may also have an adverse influence, through the creation of traps and surface states that could induce blinking, spectral diffusion, and dephasing. Here, we use photoluminescence imaging to locate the positions of single InAs/GaAs quantum dots with respect to alignment marks with < 5 nm uncertainty, allowing us to measure their behavior before and after fabrication. We track the quantum dot emission linewidth and photon statistics as a function of distance from an etched surface, and find that the linewidth is significantly broadened (up to several GHz) for etched surfaces within a couple hundred nanometers of the quantum dot. However, we do not observe appreciable reduction of the quantum dot radiative efficiency due to blinking. We also show that atomic layer deposition can stabilize spectral diffusion of the quantum dot emission, and partially recover its linewidth.
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Submitted 26 October, 2017;
originally announced October 2017.
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Maximizing waveguide integration density with multi-plane photonics
Authors:
Jeff Chiles,
Sonia Buckley,
Nima Nader,
Sae Woo Nam,
Richard P. Mirin,
Jeffrey M. Shainline
Abstract:
We propose and experimentally demonstrate a photonic routing architecture that can efficiently utilize the space of multi-plane (3D) photonic integration. A wafer with three planes of amorphous silicon waveguides was fabricated and characterized, demonstrating $<3\times10^{-4}$ dB loss per out-of-plane waveguide crossing, $0.05 \pm 0.02 $ dB per interplane coupler, and microring resonators on thre…
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We propose and experimentally demonstrate a photonic routing architecture that can efficiently utilize the space of multi-plane (3D) photonic integration. A wafer with three planes of amorphous silicon waveguides was fabricated and characterized, demonstrating $<3\times10^{-4}$ dB loss per out-of-plane waveguide crossing, $0.05 \pm 0.02 $ dB per interplane coupler, and microring resonators on three planes with a quality factors up to $8.2 \times 10^{4}$. We also explore a phase velocity map** strategy to mitigate the crosstalk between co-propagating waveguides on different planes. These results expand the utility of 3D photonic integration for applications such as optical interconnects, neuromorphic computing and optical phased arrays.
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Submitted 15 August, 2017;
originally announced August 2017.
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All-silicon light-emitting diodes waveguide-integrated with superconducting single-photon detectors
Authors:
Sonia Buckley,
Jeffrey Chiles,
Adam N. McCaughan,
Galan Moody,
Kevin L. Silverman,
Martin J. Stevens,
Richard P. Mirin,
Sae Woo Nam,
Jeffrey M. Shainline
Abstract:
We demonstrate cryogenic, electrically-injected, waveguide-coupled Si light-emitting diodes (LEDs) operating at 1.22 $μ$m. The active region of the LED consists of W centers implanted in the intrinsic region of a $p$-$i$-$n$ diode. The LEDs are integrated on waveguides with superconducting nanowire single-photon detectors (SNSPDs). We demonstrate the scalability of this platform with an LED couple…
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We demonstrate cryogenic, electrically-injected, waveguide-coupled Si light-emitting diodes (LEDs) operating at 1.22 $μ$m. The active region of the LED consists of W centers implanted in the intrinsic region of a $p$-$i$-$n$ diode. The LEDs are integrated on waveguides with superconducting nanowire single-photon detectors (SNSPDs). We demonstrate the scalability of this platform with an LED coupled to eleven SNSPDs in a single integrated photonic device. Such on-chip optical links may be useful for quantum information or neuromorphic computing applications.
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Submitted 6 July, 2017;
originally announced August 2017.