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Self-formed $LaAlO_3/SrTiO_3$ Micro-Membranes
Authors:
Alessia Sambri,
Mario Scuderi,
Anita Guarino,
Emiliano Di Gennaro,
Ricci Erlandsen,
Rasmus T. Dahm,
Anders V. Bjørlig,
Dennis V. Christensen,
Roberto Di Capua,
Bartolomeo Della Ventura,
Umberto Scotti di Uccio,
Salvatore Mirabella,
Giuseppe Nicotra,
Corrado Spinella,
Thomas S. Jespersen,
Fabio Miletto Granozio
Abstract:
Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for over a decade two of the major current research fields in Materials Science: correlated transition-metal-oxide systems and low-dimensional systems. A full mergi…
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Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for over a decade two of the major current research fields in Materials Science: correlated transition-metal-oxide systems and low-dimensional systems. A full merging of these two fields requires nevertheless the realization of $LaAlO_3/SrTiO_3$ heterostructures in the form of freestanding membranes. Here we show a completely new method for obtaining oxide hetero-membranes with micrometer lateral dimensions. Unlike traditional thin-film-based techniques developed for semiconductors and recently extended to oxides, the concept we demonstrate does not rely on any sacrificial layer and is based instead on pure strain engineering. We monitor through both real-time and post-deposition analyses, performed at different stages of growth, the strain relaxation mechanism leading to the spontaneous formation of curved hetero-membranes. Detailed transmission electron microscopy investigations show that the membranes are fully epitaxial and that their curvature results in a huge strain gradient, each of the layers showing a mixed compressive/tensile strain state. Electronic devices are fabricated by realizing ad hoc circuits for individual micro-membranes transferred on silicon chips. Our samples exhibit metallic conductivity and electrostatic field effect similar to 2D-electron systems in bulk heterostructures. Our results open a new path for adding oxide functionality into semiconductor electronics, potentially allowing for ultra-low voltage gating of a superconducting transistors, micromechanical control of the 2D electron gas mediated by ferroelectricity and flexoelectricity, and on-chip straintronics.
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Submitted 17 September, 2020; v1 submitted 15 September, 2020;
originally announced September 2020.
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Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition
Authors:
E. G. Barbagiovanni,
V. Strano,
G. Franzò,
I. Crupi,
S. Mirabella
Abstract:
Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (V$_o$) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two V$_o$ states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate…
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Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (V$_o$) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two V$_o$ states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient indicating a clear role of atmospheric O$_2$ on the surface defect states. A model for surface defect transient behaviour due to band bending with respect to the Fermi level is proposed. The results have implications for a variety of sensing and photovoltaic applications of ZnO NRs.
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Submitted 12 February, 2015;
originally announced February 2015.
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Influence of interface potential on the effective mass in Ge nanostructures
Authors:
E. G. Barbagiovanni,
S. Cosentino,
D. J. Lockwood,
R. N. Costa Filho,
A. Terrasi,
S. Mirabella
Abstract:
The role of the interface potential on the effective mass of charge carriers is elucidated in this work. We develop a new theoretical formalism using a spatially dependent effective mass that is related to the magnitude of the interface potential. Using this formalism we studied Ge quantum dots (QDs) formed by plasma enhanced chemical vapour deposition (PECVD) and co-sputtering (sputter). These sa…
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The role of the interface potential on the effective mass of charge carriers is elucidated in this work. We develop a new theoretical formalism using a spatially dependent effective mass that is related to the magnitude of the interface potential. Using this formalism we studied Ge quantum dots (QDs) formed by plasma enhanced chemical vapour deposition (PECVD) and co-sputtering (sputter). These samples allowed us to isolate important consequences arising from differences in the interface potential. We found that for a higher interface potential, as in the case of PECVD QDs, there is a larger reduction in the effective mass, which increases the confinement energy with respect to the sputter sample. We further understood the action of O interface states by comparing our results with Ge QDs grown by molecular beam epitaxy. It is found that the O states can suppress the influence of the interface potential. From our theoretical formalism we determine the length scale over which the interface potential influences the effective mass.
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Submitted 12 February, 2015;
originally announced February 2015.
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Extended point defects in crystalline materials: Ge and Si
Authors:
Nick E. B. Cowern,
Sergei Simdyankin,
Chihak Ahn,
Nick S. Bennett,
Jonathan P. Goss,
Jean-Michel Hartmann,
Ardechir Pakfar,
Silke Hamm,
Jérôme Valentin,
Enrico Napolitani,
Davide De Salvador,
Elena Bruno,
Salvatore Mirabella
Abstract:
B diffusion measurements are used to probe the basic nature of self-interstitial 'point' defects in Ge. We find two distinct self-interstitial forms - a simple one with low entropy and a complex one with entropy ~30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket - we name it a 'morph'. Com…
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B diffusion measurements are used to probe the basic nature of self-interstitial 'point' defects in Ge. We find two distinct self-interstitial forms - a simple one with low entropy and a complex one with entropy ~30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket - we name it a 'morph'. Computational modelling suggests that morphs exist in both self-interstitial and vacancy-like forms, and are crucial for diffusion and defect dynamics in Ge, Si and probably many other crystalline solids.
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Submitted 12 March, 2013; v1 submitted 10 October, 2012;
originally announced October 2012.
