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Two-step growth mechanism of the solid electrolyte interphase in argyrodyte/Li-metal contacts
Authors:
Gracie Chaney,
Andrey Golov,
Ambroise van Roekeghem,
Javier Carrasco,
Natalio Mingo
Abstract:
The structure and growth of the Solid Electrolyte Interphase (SEI) region between an electrolyte and an electrode is one of the most fundamental, yet less-well understood phenomena in solid-state batteries. We present a parameter-free atomistic simulation of the SEI growth for one of the currently promising solid electrolytes (Li$_6$PS$_5$Cl), based on \textit{ab initio} trained machine learning (…
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The structure and growth of the Solid Electrolyte Interphase (SEI) region between an electrolyte and an electrode is one of the most fundamental, yet less-well understood phenomena in solid-state batteries. We present a parameter-free atomistic simulation of the SEI growth for one of the currently promising solid electrolytes (Li$_6$PS$_5$Cl), based on \textit{ab initio} trained machine learning (ML) interatomic potentials, for over 30,000 atoms during 10 ns, well-beyond the capabilities of conventional MD. This unveils a two-step growth mechanism: Li-argyrodite chemical reaction leading to the formation of an amorphous phase, followed by a kinetically slower crystallization of the reaction products into a 5Li$_2$SLi$_3$PLiCl solid solution. The simulation results support the recent, experimentally founded hypothesis of an indirect pathway of electrolyte reduction. These findings shed light on the intricate processes governing SEI evolution, providing a valuable foundation for the design and optimization of next-generation solid-state batteries.
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Submitted 6 February, 2024;
originally announced February 2024.
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Can silica nanoparticles improve lithium transport in polymer electrolytes?
Authors:
Joel Martin Dalmas,
Ambroise van Roekeghem,
Natalio Mingo,
Stefano Mossa
Abstract:
The question of if silica nanoparticles can enhance the ionic conductivity of a polymer electrolyte above its crystallization temperature has remained unclear for the two decades following the first experiments on these systems. We use Molecular Dynamics simulations to decipher the atomic scale mechanisms affecting the properties of LiTFSI-poly(ethylene oxide) electrolytes upon the addition of sil…
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The question of if silica nanoparticles can enhance the ionic conductivity of a polymer electrolyte above its crystallization temperature has remained unclear for the two decades following the first experiments on these systems. We use Molecular Dynamics simulations to decipher the atomic scale mechanisms affecting the properties of LiTFSI-poly(ethylene oxide) electrolytes upon the addition of silica nanoparticles. At any ionic concentration, adding nanoparticles significantly decreases the conductivity. Most of this reduction can be simply accounted for by the diffusion equation, resulting from the fact that the space occupied by the nanoparticles is made inactive and unable to sustain ionic diffusion. We identify two distinct regimes, above and below a concentration threshold, corresponding to very different ionic distributions and coordination features of the various species. The lack of conductivity enhancement observed in the simulations supports the conclusions of some recent measurements, and disagrees with the earliest experimental reports on hybrid silica/polyethylene-oxide electrolytes.
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Submitted 28 February, 2024; v1 submitted 9 December, 2023;
originally announced December 2023.
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Modelling structure and ionic diffusion in a class of ionic liquid crystal-based solid electrolytes
Authors:
Md Sharif Khan,
Ambroise Van Roekeghem,
Stefano Mossa,
Flavien Ivol,
Laurent Bernard,
Lionel Picard,
Natalio Mingo
Abstract:
Next-generation high-efficiency Li-ion batteries require an electrolyte that is both safe and thermally stable. A possible choice for high performance all-solid-state Li-ion batteries is a liquid crystal, which possesses properties in-between crystalline solids and isotropic liquids. By employing molecular dynamics simulations together with various experimental techniques, we have designed and ana…
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Next-generation high-efficiency Li-ion batteries require an electrolyte that is both safe and thermally stable. A possible choice for high performance all-solid-state Li-ion batteries is a liquid crystal, which possesses properties in-between crystalline solids and isotropic liquids. By employing molecular dynamics simulations together with various experimental techniques, we have designed and analyzed a novel liquid crystal electrolyte composed of rigid naphthalene-based moieties as mesogenic units, grafted to flexible alkyl chains of different lengths. We have synthesized novel highly ordered lamellar phase liquid crystal electrolytes at 99% purity and have evaluated the effect of alkyl chain length variation on ionic conduction. We find that the conductivity of the liquid crystal electrolytes is directly dependent on the extent of the nanochannels formed by molecule self-organization, which itself depends non-monotonously on the size of the alkyl chains. In addition, we show that the ion pair interaction between the anionic center of the liquid crystal molecules and the Li+ ions plays a crucial role in the overall conductivity. Based on our results, we suggest that further improvement of the ionic conductivity performance is possible, making this novel family of liquid crystal electrolytes a promising option for the design of entirely solid-state Li+ ion batteries.
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Submitted 28 February, 2024; v1 submitted 7 February, 2023;
originally announced February 2023.
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Finite temperature dielectric properties of KTaO$_3$ from first principles and machine learning: Phonon spectra, Barrett law, strain engineering and electrostriction
Authors:
Quintin N. Meier,
Natalio Mingo,
Ambroise van Roekeghem
Abstract:
Despite important breakthroughs in the last decade, the calculation of temperature dependent properties of solids still remains a challenging task, especially in the vicinity of structural phase transitions. We show that the combination of machine-learning interatomic potentials with quantum self-consistent ab initio lattice dynamics allows to calculate efficiently the temperature dependence of di…
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Despite important breakthroughs in the last decade, the calculation of temperature dependent properties of solids still remains a challenging task, especially in the vicinity of structural phase transitions. We show that the combination of machine-learning interatomic potentials with quantum self-consistent ab initio lattice dynamics allows to calculate efficiently the temperature dependence of dielectric properties of the quantum paraelectric perovskite KTaO$_3$, with a precision beyond what could be reasonably achieved using plain density functional theory. We first follow the strong anharmonic softening of the polar mode in this incipient ferroelectric material, and the resulting divergence of the dielectric constant that eventually saturates due to the interplay between temperature and quantum fluctuations. Further, we predict the stability range of the quantum paraelectric state under the application of epitaxial strain at 0 K and 300 K. Finally, we calculate the temperature dependence of electrostrictive tensors for this material and show that giant electrostriction in KTaO$_3$ is to be expected also at room temperature under the condition of strain engineering.
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Submitted 17 June, 2022; v1 submitted 16 June, 2022;
originally announced June 2022.
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Site independent strong phonon-vacancy scattering in high temperature ceramics ZrB$_2$ and HfB$_2$
Authors:
Vrishali Sonar,
Rohan Dehankar,
K. P. Vijayalakshmi,
Natalio Mingo,
Ankita Katre
Abstract:
Similar effects of metal and boron vacancies on phonon scattering and lattice thermal conductivity ($κ_l$) of ZrB$_2$ and HfB$_2$ are reported. These defects challenge the conventional understanding that associates larger impacts to bigger defects. We find the underlying reason to be a strong local perturbation caused by the boron vacancy that substantially changes the interatomic force constants.…
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Similar effects of metal and boron vacancies on phonon scattering and lattice thermal conductivity ($κ_l$) of ZrB$_2$ and HfB$_2$ are reported. These defects challenge the conventional understanding that associates larger impacts to bigger defects. We find the underlying reason to be a strong local perturbation caused by the boron vacancy that substantially changes the interatomic force constants. In contrast, a long ranged but weaker perturbation is seen in the case metal vacancies. We show that these behaviours originate from a mixed metallic and covalent bonding nature in the metal diborides. The thermal transport calculations are performed in a complete \textit{ab initio} framework based on Boltzmann transport equation and density functional theory. Phonon-vacancy scattering is calculated using \textit{ab initio} Green's function approach. Effects of natural isotopes and grain boundaries on $κ_l$ are also systematically investigated, however we find an influential role of vacancies to explain large variations seen in the experiments. We further report a two-order of magnitude difference between the amorphous and pure-crystal limits. Our results outline significant material design aspects for these multi-functional high temperature ceramics.
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Submitted 25 February, 2022;
originally announced February 2022.
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Free energy of (CoxMn1-x)3O4 mixed phases from machine-learning-enhanced ab initio calculations
Authors:
Suzanne K. Wallace,
Anton S. Bochkarev,
Ambroise van Roekeghem,
Javier Carrasco,
Alexander Shapeev,
Natalio Mingo
Abstract:
(CoxMn1-x)3O4 is a promising candidate material for solar thermochemical energy storage. A high-temperature model for this system would provide a valuable tool for evaluating its potential. However, predicting phase diagrams of complex systems with ab initio calculations is challenging due to the varied sources affecting the free energy, and with the prohibitive amount of configurations needed in…
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(CoxMn1-x)3O4 is a promising candidate material for solar thermochemical energy storage. A high-temperature model for this system would provide a valuable tool for evaluating its potential. However, predicting phase diagrams of complex systems with ab initio calculations is challenging due to the varied sources affecting the free energy, and with the prohibitive amount of configurations needed in the configurational entropy calculation. In this work, we compare three different machine learning (ML) approaches for sampling the configuration space of (CoxMn1-x)3O4, including a simpler ML approach, which would be suitable for application in high-throughput studies. We use experimental data for a feature of the phase diagram to assess the accuracy of model predictions. We find that with some methods, data pre-treatment is needed to obtain accurate predictions due to inherently composition-imbalanced training data for a mixed phase. We highlight that the important entropy contributions depend on the physical regimes of the system under investigation and that energy predictions with ML models are more challenging at compositions where there are energetically competing ground state crystal structures. Similar methods to those outlined here can be used to screen other candidate materials for thermochemical energy storage
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Submitted 6 March, 2021;
originally announced March 2021.
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How do defects limit the ultrahigh thermal conductivity of BAs? A first principles study
Authors:
Mauro Fava,
Nakib Haider Protik,
Chunhua Li,
Navaneetha Krishnan Ravichandran,
Jesús Carrete,
Ambroise van Roekeghem,
Georg K. H. Madsen,
Natalio Mingo,
David Broido
Abstract:
The promise enabled by BAs high thermal conductivity in power electronics cannot be assessed without taking into account the reduction incurred when do** the material. Using first principles calculations, we determine the thermal conductivity reduction induced by different group IV impurities in BAs as a function of concentration and charge state. We unveil a general trend, where neutral impurit…
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The promise enabled by BAs high thermal conductivity in power electronics cannot be assessed without taking into account the reduction incurred when do** the material. Using first principles calculations, we determine the thermal conductivity reduction induced by different group IV impurities in BAs as a function of concentration and charge state. We unveil a general trend, where neutral impurities scatter phonons more strongly than the charged ones. $\text{C}_{\text{B}}$ and $\text{Ge}_{\text{As}}$ impurities show by far the weakest phonon scattering and retain BAs $κ$ values of over $\sim$ 1000 $\text{W}\cdot\text{K}^{-1}\cdot\text{m}^{-1}$ even up to high densities making them ideal n-type and p-type dopants. Furthermore, going beyond the do** compensation threshold associated to Fermi level pinning triggers observable changes in the thermal conductivity. This informs design considerations on the do** of BAs, and it also suggests a direct way to determine the onset of compensation do** in experimental samples.
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Submitted 28 October, 2020;
originally announced October 2020.
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Quantum Self-Consistent Ab-Initio Lattice Dynamics
Authors:
Ambroise van Roekeghem,
Jesús Carrete,
Natalio Mingo
Abstract:
The Quantum Self-Consistent Ab-Initio Lattice Dynamics package (QSCAILD) is a python library that computes temperature-dependent effective 2nd and 3rd order interatomic force constants in crystals, including anharmonic effects. QSCAILD's approach is based on the quantum statistics of a harmonic model. The program requires the forces acting on displaced atoms of a solid as an input, which can be ob…
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The Quantum Self-Consistent Ab-Initio Lattice Dynamics package (QSCAILD) is a python library that computes temperature-dependent effective 2nd and 3rd order interatomic force constants in crystals, including anharmonic effects. QSCAILD's approach is based on the quantum statistics of a harmonic model. The program requires the forces acting on displaced atoms of a solid as an input, which can be obtained from an external code based on density functional theory, or any other calculator. This article describes QSCAILD's implementation, clarifies its connections to other methods, and illustrates its use in the case of the SrTiO3 cubic perovskite structure.
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Submitted 5 March, 2021; v1 submitted 23 June, 2020;
originally announced June 2020.
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Growth, charge and thermal transport of flowered graphene
Authors:
Alessandro Cresti,
Jesús Carrete,
Hanako Okuno,
Tao Wang,
Georg K. H. Madsen,
Natalio Mingo,
Pascal Pochet
Abstract:
We report on the structural and transport properties of the smallest dislocation loop in graphene, known as a flower defect. First, by means of advanced experimental imaging techniques, we deduce how flower defects are formed during recrystallization of chemical vapor deposited graphene. We propose that the flower defects arise from a bulge type mechanism in which the flower domains are the grains…
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We report on the structural and transport properties of the smallest dislocation loop in graphene, known as a flower defect. First, by means of advanced experimental imaging techniques, we deduce how flower defects are formed during recrystallization of chemical vapor deposited graphene. We propose that the flower defects arise from a bulge type mechanism in which the flower domains are the grains left over by dynamic recrystallisation. Next, in order to evaluate the use of such defects as possible building blocks for all-graphene electronics, we combine multiscale modeling tools to investigate the structure and the electron and phonon transport properties of large monolayer graphene samples with a random distribution of flower defects. For large enough flower densities, we find that electron transport is strongly suppressed while, surprisingly, hole transport remains almost unaffected. These results suggest possible applications of flowered graphene for electron energy filtering. For the same defect densities, phonon transport is reduced by orders of magnitude as elastic scattering by defects becomes dominant. Heat transport by flexural phonons, key in graphene, is largely suppressed even for very low concentrations.
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Submitted 11 February, 2020;
originally announced February 2020.
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Combined treatment of phonon scattering by electrons and point defects explains the thermal conductivity reduction in highly-doped Si
Authors:
Bonny Dongre,
Jesús Carrete,
Shihao Wen,
**long Ma,
Wu Li,
Natalio Mingo,
Georg K. H. Madsen
Abstract:
The mechanisms causing the reduction in lattice thermal conductivity in highly P- and B-doped Si are looked into in detail. Scattering rates of phonons by point defects, as well as by electrons, are calculated from first principles. Lattice thermal conductivities are calculated considering these scattering mechanisms both individually and together. It is found that at low carrier concentrations an…
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The mechanisms causing the reduction in lattice thermal conductivity in highly P- and B-doped Si are looked into in detail. Scattering rates of phonons by point defects, as well as by electrons, are calculated from first principles. Lattice thermal conductivities are calculated considering these scattering mechanisms both individually and together. It is found that at low carrier concentrations and temperatures phonon scattering by electrons is dominant and can reproduce the experimental thermal conductivity reduction. However, at higher do** concentrations the scattering rates of phonons by point defects dominate the ones by electrons except for the lowest phonon frequencies. Consequently, phonon scattering by point defects contributes substantially to the thermal conductivity reduction in Si at defect concentrations above $10^{19}$ cm$^{-3}$ even at room temperature. Only when, phonon scattering by both point defects and electrons are taken into account, excellent agreement is obtained with the experimental values at all temperatures.
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Submitted 1 October, 2019;
originally announced October 2019.
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Anharmonic Thermodynamics of Vacancies Using a Neural Network Potential
Authors:
Anton S. Bochkarev,
Ambroise van Roekeghem,
Stefano Mossa,
Natalio Mingo
Abstract:
Lattice anharmonicity is thought to strongly affect vacancy concentrations in metals at high temperatures. It is however non-trivial to account for this effect directly using density functional theory (DFT). Here we develop a deep neural network potential for aluminum that overcomes the limitations inherent to DFT, and we use it to obtain accurate anharmonic vacancy formation free energies as a fu…
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Lattice anharmonicity is thought to strongly affect vacancy concentrations in metals at high temperatures. It is however non-trivial to account for this effect directly using density functional theory (DFT). Here we develop a deep neural network potential for aluminum that overcomes the limitations inherent to DFT, and we use it to obtain accurate anharmonic vacancy formation free energies as a function of temperature. While confirming the important role of anharmonicity at high temperatures, the calculation unveils a markedly nonlinear behavior of the vacancy formation entropy and shows that the vacancy formation free energy only violates Arrhenius law at temperatures above 600 K, in contrast with previous DFT calculations.
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Submitted 23 September, 2019;
originally announced September 2019.
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Effect of local chemistry and structure on thermal transport in doped GaAs
Authors:
Ashis Kundu,
Fabian Otte,
Jesús Carrete,
Paul Erhart,
Wu Li,
Natalio Mingo,
Georg K. H. Madsen
Abstract:
Using a first-principles approach, we analyze the impact of \textit{DX} centers formed by S, Se, and Te dopant atoms on the thermal conductivity of GaAs. Our results are in good agreement with experiments and unveil the physics behind the drastically different effect of each kind of defect. We establish a causal chain linking the electronic structure of the dopants to the thermal conductivity of t…
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Using a first-principles approach, we analyze the impact of \textit{DX} centers formed by S, Se, and Te dopant atoms on the thermal conductivity of GaAs. Our results are in good agreement with experiments and unveil the physics behind the drastically different effect of each kind of defect. We establish a causal chain linking the electronic structure of the dopants to the thermal conductivity of the bulk solid, a macroscopic transport coefficient. Specifically, the presence of lone pairs leads to the formation of structurally asymmetric \textit{DX} centers that cause resonant scattering of incident phonons. The effect of such resonances is magnified when they affect the part of the spectrum most relevant for thermal transport. We show that these resonances are associated with localized vibrational modes in the perturbed phonon spectrum. Finally, we illustrate the connection between flat adjacent minima in the energy landscape and resonant phonon scattering through detailed analyses of the energy landscape of the defective structures.
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Submitted 27 May, 2019;
originally announced May 2019.
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Thermal conductivity of crystalline AlN and the influence of atomic-scale defects
Authors:
Runjie Lily Xu,
Miguel Munoz Rojo,
S. M. Islam,
Aditya Sood,
Bozo Vareskic,
Ankita Katre,
Natalio Mingo,
Kenneth E. Goodson,
Huili Grace Xing,
Debdeep Jena,
Eric Pop
Abstract:
Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here we measure the thermal conductivity of crystalline AlN by the 3$ω$ method, finding it ranges from 674 ${\pm}$ 56 W/m/K at 100 K to 186 ${\pm}$ 7 W/m/K at 400 K, with a value of 237 ${\pm}$ 6 W/m/K at room temperature. We compare the…
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Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here we measure the thermal conductivity of crystalline AlN by the 3$ω$ method, finding it ranges from 674 ${\pm}$ 56 W/m/K at 100 K to 186 ${\pm}$ 7 W/m/K at 400 K, with a value of 237 ${\pm}$ 6 W/m/K at room temperature. We compare these data with analytical models and first principles calculations, taking into account atomic-scale defects (O, Si, C impurities, and Al vacancies). We find Al vacancies play the greatest role in reducing thermal conductivity because of the largest mass-difference scattering. Modeling also reveals that 10% of heat conduction is contributed by phonons with long mean free paths, over ~7 $μ$m at room temperature, and 50% by phonons with MFPs over ~0.3 $μ$m. Consequently, the effective thermal conductivity of AlN is strongly reduced in sub-micron thin films or devices due to phonon-boundary scattering.
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Submitted 8 December, 2019; v1 submitted 31 March, 2019;
originally announced April 2019.
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Magnetic Order and Lattice Instabilities in Ni$_{2}$Mn$_{1+x}$Sn$_{1-x}$ Heusler based Magnetic Shape-Memory Alloys
Authors:
Vijay Singh,
Ambroise van Roekeghem,
S. K. Panda,
S. Majumdar,
Natalio Mingo,
I Dasgupta
Abstract:
The magnetic correlations in the austenite phase and the consequent martensitic transition in inverse magnetocaloric alloys, Ni$_{2}$Mn$_{1+x}$Sn$_{1-x}$, have been a matter of debate for decades. We conclusively establish using {\it ab initio} phonon calculations that the spin alignment of excess Mn at the Sn site (Mn$_{Sn}$) with the existing Mn in the unit cell in the high temperature cubic pha…
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The magnetic correlations in the austenite phase and the consequent martensitic transition in inverse magnetocaloric alloys, Ni$_{2}$Mn$_{1+x}$Sn$_{1-x}$, have been a matter of debate for decades. We conclusively establish using {\it ab initio} phonon calculations that the spin alignment of excess Mn at the Sn site (Mn$_{Sn}$) with the existing Mn in the unit cell in the high temperature cubic phase of Ni-Mn-Sn alloy is ferromagnetic (FM), and not ferrimagnetic (FI), resolving a long lasting controversy. Using first principles density functional perturbation theory (DFPT), we observe an instability of the TA$_{2}$ mode along the $Γ$-M direction in the FM phase, very similar to that observed in the prototypical ferromagnetic shape memory alloy (FSMA) Ni$_{2}$MnGa. This specific instability is not observed in the FI phase. Further finite temperature first principles lattice dynamics calculations reveal that at 300 K the FM phase becomes mechanically stable, while the FI phase continue to remain unstable providing credence to the fact that the high-temperature phase has FM order. These results will be primordial to understand the magneto-structural properties of this class of compounds.
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Submitted 10 November, 2018;
originally announced November 2018.
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Absence of Casimir regime in two-dimensional nanoribbon phonon conduction
Authors:
Z. Wang,
N. Mingo
Abstract:
In stark contrast with three-dimensional (3D) nanostructures, we show that boundary scattering in two-dimensional (2D) nanoribbons alone does not lead to a finite phonon mean free path. If combined with an intrinsic scattering mechanism, 2D boundary scattering does reduce the overall mean free path, however the latter does not scale proportionally to the ribbon width, unlike the well known Casimir…
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In stark contrast with three-dimensional (3D) nanostructures, we show that boundary scattering in two-dimensional (2D) nanoribbons alone does not lead to a finite phonon mean free path. If combined with an intrinsic scattering mechanism, 2D boundary scattering does reduce the overall mean free path, however the latter does not scale proportionally to the ribbon width, unlike the well known Casimir regime occurring in 3D nanowires. We show that boundary scattering can be accounted for by a simple Mathiessen type approach for many different 3D nanowire cross sectional shapes, however this is not possible in the 2D nanoribbon case, where a complete solution of the Boltzmann transport equation is required. These facts have strong implications for the thermal conductivity of suspended nanostructures.
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Submitted 24 October, 2018;
originally announced October 2018.
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Thermoelectric transport properties of silicon: Towards an ab initio approach
Authors:
Z. Wang,
S. Wang,
S. Obukhov,
N. Vast,
J. Sjakste,
V. Tyuterev,
N. Mingo
Abstract:
We have combined the Boltzmann transport equation with an {\it ab initio} approach to compute the thermoelectric coefficients of semiconductors. Electron-phonon, ionized impurity, and electron-plasmon scattering rates have been taken into account. The electronic band structure and average intervalley deformation potentials for the electron-phonon coupling are obtained from the density functional t…
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We have combined the Boltzmann transport equation with an {\it ab initio} approach to compute the thermoelectric coefficients of semiconductors. Electron-phonon, ionized impurity, and electron-plasmon scattering rates have been taken into account. The electronic band structure and average intervalley deformation potentials for the electron-phonon coupling are obtained from the density functional theory. The linearized Boltzmann equation has then been solved numerically beyond the relaxation time approximation. Our approach has been applied to crystalline silicon. We present results for the mobility, Seebeck coefficient, and electronic contribution to the thermal conductivity, as a function of the carrier concentration and temperature. The calculated coefficients are in good quantitative agreement with experimental results.
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Submitted 24 October, 2018;
originally announced October 2018.
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Thermal resistance of GaN/AlN graded interfaces
Authors:
Ambroise van Roekeghem,
Bjorn Vermeersch,
Jesús Carrete,
Natalio Mingo
Abstract:
Compositionally graded interfaces in power electronic devices eliminate dislocations, but they can also decrease thermal conduction, leading to overheating. We quantify the thermal resistances of GaN/AlN graded interfaces of varying thickness using ab initio Green's functions, and compare them with the abrupt interface case. A non-trivial power dependence of the thermal resistance versus interface…
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Compositionally graded interfaces in power electronic devices eliminate dislocations, but they can also decrease thermal conduction, leading to overheating. We quantify the thermal resistances of GaN/AlN graded interfaces of varying thickness using ab initio Green's functions, and compare them with the abrupt interface case. A non-trivial power dependence of the thermal resistance versus interface thickness emerges from the interplay of alloy and mismatch scattering mechanisms. We show that the overall behavior of such graded interfaces is very similar to that of a thin-film of an effective alloy in the length scales relevant to real interfaces.
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Submitted 21 February, 2019; v1 submitted 28 September, 2018;
originally announced September 2018.
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Ab initio lattice thermal conductivity of bulk and thin-film $α$-Al$\mathrm{_2}$O$\mathrm{_3}$
Authors:
Bonny Dongre,
Jesús Carrete,
Natalio Mingo,
Georg K H Madsen
Abstract:
The thermal conductivities ($κ$) of bulk and thin-film $α$-Al$_2$O$_3$ are calculated from first principles using both the local density approximation (LDA), and the generalized gradient approximation (GGA) to exchange and correlation. The room temperature single crystal LDA value $\sim39~$W/m$~$K agrees well with the experimental values $\sim35-39~$W/m$~$K, whereas the GGA values are much smaller…
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The thermal conductivities ($κ$) of bulk and thin-film $α$-Al$_2$O$_3$ are calculated from first principles using both the local density approximation (LDA), and the generalized gradient approximation (GGA) to exchange and correlation. The room temperature single crystal LDA value $\sim39~$W/m$~$K agrees well with the experimental values $\sim35-39~$W/m$~$K, whereas the GGA values are much smaller $\sim$26$~$W/m$~$K. Throughout the temperature range, LDA is found to slightly overestimate $κ$ whereas GGA strongly underestimates it. We calculate the $κ$ of crystalline $α$-Al$\mathrm{_2}$O$\mathrm{_3}$ thin films and observe a maximum of 79$\%$ reduction for $10~$nm thickness.
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Submitted 28 August, 2018; v1 submitted 22 June, 2018;
originally announced June 2018.
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High-throughput study of the static dielectric constant at high temperatures in oxide and fluoride cubic perovskites
Authors:
Ambroise van Roekeghem,
Jesús Carrete,
Stefano Curtarolo,
Natalio Mingo
Abstract:
Using finite-temperature phonon calculations and the Lyddane-Sachs-Teller relations, we calculate ab initio the static dielectric constants of 78 semiconducting oxides and fluorides with cubic perovskite structures at 1000 K. We first compare our method with experimental measurements, and we find that it succeeds in describing the temperature dependence and the relative ordering of the static diel…
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Using finite-temperature phonon calculations and the Lyddane-Sachs-Teller relations, we calculate ab initio the static dielectric constants of 78 semiconducting oxides and fluorides with cubic perovskite structures at 1000 K. We first compare our method with experimental measurements, and we find that it succeeds in describing the temperature dependence and the relative ordering of the static dielectric constant $ε_{DC}$ in the series of oxides BaTiO$_{3}$, SrTiO$_{3}$, KTaO$_{3}$. We show that the effects of anharmonicity on the ion-clamped dielectric constant, on Born charges, and on phonon lifetimes, can be neglected in the framework of our high-throughput study. Based on the high-temperature phonon spectra, we find that the dispersion of $ε_{DC}$ is one order of magnitude larger amongst oxides than fluorides at 1000 K. We display the correlograms of the dielectric constants with simple structural descriptors, and we point out that $ε_{DC}$ is actually well correlated with the infinite-frequency dielectric constant $ε_{\infty}$, even in those materials with phase transitions in which $ε_{DC}$ is strongly temperature-dependent.
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Submitted 25 November, 2020; v1 submitted 23 May, 2018;
originally announced May 2018.
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Vibrational properties of metastable polymorph structures by machine learning
Authors:
Fleur Legrain,
Ambroise van Roekeghem,
Stefano Curtarolo,
Jesus Carrete,
Georg K. H. Madsen,
Natalio Mingo
Abstract:
Despite vibrational properties being critical for the ab initio prediction of the finite temperature stability and transport properties of solids, their inclusion in ab initio materials repositories has been hindered by expensive computational requirements. Here we tackle the challenge, by showing that a good estimation of force constants and vibrational properties can be quickly achieved from the…
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Despite vibrational properties being critical for the ab initio prediction of the finite temperature stability and transport properties of solids, their inclusion in ab initio materials repositories has been hindered by expensive computational requirements. Here we tackle the challenge, by showing that a good estimation of force constants and vibrational properties can be quickly achieved from the knowledge of atomic equilibrium positions using machine learning. A random-forest algorithm trained on only 121 metastable structures of KZnF$_3$ reaches a maximum absolute error of 0.17 eV/$\textrmÅ^2$ for the interatomic force constants, and it is much less expensive than training the complete force field for such compound. The predicted force constants are then used to estimate phonon spectral features, heat capacities, vibrational entropies, and vibrational free energies, which compare well with the ab initio ones. The approach can be used for the rapid estimation of stability at finite temperatures.
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Submitted 26 March, 2018;
originally announced March 2018.
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Phonon transport unveils the prevalent point defects in GaN
Authors:
Ankita Katre,
Jesús Carrete,
Tao Wang,
Georg K. H. Madsen,
Natalio Mingo
Abstract:
Determining the types and concentrations of vacancies present in intentionally doped GaN is a notoriously difficult and long-debated problem. Here we use an unconventional approach, based on thermal transport modeling, to determine the prevalence of vacancies in previous measurements. This allows us to provide conclusive evidence of the recent hypothesis that gallium vacancies in ammonothermally g…
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Determining the types and concentrations of vacancies present in intentionally doped GaN is a notoriously difficult and long-debated problem. Here we use an unconventional approach, based on thermal transport modeling, to determine the prevalence of vacancies in previous measurements. This allows us to provide conclusive evidence of the recent hypothesis that gallium vacancies in ammonothermally grown samples can be complexed with hydrogen. Our calculations for O-doped and Mg-O co-doped samples yield a consistent picture interlinking dopant and vacancy concentration, carrier density, and thermal conductivity, in excellent agreement with experimental measurements. These results also highlight the predictive power of ab initio phonon transport modeling, and its value for understanding and quantifying defects in semiconductors.
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Submitted 21 December, 2017;
originally announced December 2017.
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First-principles quantitative prediction of the lattice thermal conductivity in random semiconductor alloys: the role of force-constant disorder
Authors:
Marco Arrigoni,
Jesús Carrete,
Natalio Mingo,
Georg K. H. Madsen
Abstract:
The standard theoretical understanding of the lattice thermal conductivity, $κ_{\ell}$, of semiconductor alloys assumes that mass disorder is the most important source of phonon scattering. In contrast, we show that the hitherto neglected contribution of force-constant (IFC) disorder is essential to accurately predict the $κ_{\ell}$ of those polar compounds characterized by a complex atomic-scale…
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The standard theoretical understanding of the lattice thermal conductivity, $κ_{\ell}$, of semiconductor alloys assumes that mass disorder is the most important source of phonon scattering. In contrast, we show that the hitherto neglected contribution of force-constant (IFC) disorder is essential to accurately predict the $κ_{\ell}$ of those polar compounds characterized by a complex atomic-scale structure. We have developed an \emph{ab initio} method based on special quasirandom structures and Green's functions, and including the role of IFC disorder, and applied it in order to calculate the $κ_{\ell}$ of $\mathrm{In_{1-x}Ga_xAs}$ and $\mathrm{Si_{1-x}Ge_x}$ alloys. We show that, while for $\mathrm{Si_{1-x}Ge_x}$, phonon-alloy scattering is dominated by mass disorder, for $\mathrm{In_{1-x}Ga_xAs}$, the inclusion of IFC disorder is fundamental to accurately reproduce the experimentally observed $κ_{\ell}$. As the presence of a complex atomic-scale structure is common to most III-V and II-VI random semiconductor alloys, we expect our method to be suitable for a wide class of materials.
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Submitted 7 December, 2017;
originally announced December 2017.
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The AFLOW Fleet for Materials Discovery
Authors:
Cormac Toher,
Corey Oses,
David Hicks,
Eric Gossett,
Frisco Rose,
Pinku Nath,
Demet Usanmaz,
Denise C. Ford,
Eric Perim,
Camilo E. Calderon,
Jose J. Plata,
Yoav Lederer,
Michal Jahnátek,
Wahyu Setyawan,
Shidong Wang,
Junkai Xue,
Kevin Rasch,
Roman V. Chepulskii,
Richard H. Taylor,
Geena Gomez,
Harvey Shi,
Andrew R. Supka,
Rabih Al Rahal Al Orabi,
Priya Gopal,
Frank T. Cerasoli
, et al. (26 additional authors not shown)
Abstract:
The traditional paradigm for materials discovery has been recently expanded to incorporate substantial data driven research. With the intent to accelerate the development and the deployment of new technologies, the AFLOW Fleet for computational materials design automates high-throughput first principles calculations, and provides tools for data verification and dissemination for a broad community…
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The traditional paradigm for materials discovery has been recently expanded to incorporate substantial data driven research. With the intent to accelerate the development and the deployment of new technologies, the AFLOW Fleet for computational materials design automates high-throughput first principles calculations, and provides tools for data verification and dissemination for a broad community of users. AFLOW incorporates different computational modules to robustly determine thermodynamic stability, electronic band structures, vibrational dispersions, thermo-mechanical properties and more. The AFLOW data repository is publicly accessible online at aflow.org, with more than 1.7 million materials entries and a panoply of queryable computed properties. Tools to programmatically search and process the data, as well as to perform online machine learning predictions, are also available.
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Submitted 1 December, 2017;
originally announced December 2017.
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AFLOW-ML: A RESTful API for machine-learning predictions of materials properties
Authors:
Eric Gossett,
Cormac Toher,
Corey Oses,
Olexandr Isayev,
Fleur Legrain,
Frisco Rose,
Eva Zurek,
Jesús Carrete,
Natalio Mingo,
Alexander Tropsha,
Stefano Curtarolo
Abstract:
Machine learning approaches, enabled by the emergence of comprehensive databases of materials properties, are becoming a fruitful direction for materials analysis. As a result, a plethora of models have been constructed and trained on existing data to predict properties of new systems. These powerful methods allow researchers to target studies only at interesting materials $\unicode{x2014}$ neglec…
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Machine learning approaches, enabled by the emergence of comprehensive databases of materials properties, are becoming a fruitful direction for materials analysis. As a result, a plethora of models have been constructed and trained on existing data to predict properties of new systems. These powerful methods allow researchers to target studies only at interesting materials $\unicode{x2014}$ neglecting the non-synthesizable systems and those without the desired properties $\unicode{x2014}$ thus reducing the amount of resources spent on expensive computations and/or time-consuming experimental synthesis. However, using these predictive models is not always straightforward. Often, they require a panoply of technical expertise, creating barriers for general users. AFLOW-ML (AFLOW $\underline{\mathrm{M}}$achine $\underline{\mathrm{L}}$earning) overcomes the problem by streamlining the use of the machine learning methods developed within the AFLOW consortium. The framework provides an open RESTful API to directly access the continuously updated algorithms, which can be transparently integrated into any workflow to retrieve predictions of electronic, thermal and mechanical properties. These types of interconnected cloud-based applications are envisioned to be capable of further accelerating the adoption of machine learning methods into materials development.
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Submitted 29 November, 2017;
originally announced November 2017.
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Predictive design and experimental realization of InAs/GaAs superlattices with tailored thermal conductivity
Authors:
J. Carrete,
B. Vermeersch,
L. Thumfart,
R. R. Kakodkar,
G. Trevisi,
P. Frigeri,
L. Seravalli,
J. P. Feser,
A. Rastelli,
N. Mingo
Abstract:
We demonstrate an ab-initio predictive approach to computing the thermal conductivity ($κ$) of InAs/GaAs superlattices (SLs) of varying period, thickness, and composition. Our new experimental results illustrate how this method can yield good agreement with experiment when realistic composition profiles are used as inputs for the theoretical model. Due to intrinsic limitations to the InAs thicknes…
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We demonstrate an ab-initio predictive approach to computing the thermal conductivity ($κ$) of InAs/GaAs superlattices (SLs) of varying period, thickness, and composition. Our new experimental results illustrate how this method can yield good agreement with experiment when realistic composition profiles are used as inputs for the theoretical model. Due to intrinsic limitations to the InAs thickness than can be grown, bulk-like SLs show limited sensitivity to the details of their composition profile, but the situation changes significantly when finite-thickness effects are considered. If In segregation could be minimized during the growth process, SLs with significantly higher $κ$ than that of the random alloy with the same composition would be obtained, with the potential to improve heat dissipation in InAs/GaAs-based devices.
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Submitted 10 October, 2017;
originally announced October 2017.
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Glass-Like Thermal Conductivity in Nanostructures of a Complex Anisotropic Crystal
Authors:
Annie Weathers,
Jesus Carrete,
John P. Degrave,
Jeremy M. Higgins,
Arden L. Moore,
Jaehyun Kim,
Natalio Mingo,
Song **,
Li Shi
Abstract:
Size effects on vibrational modes in complex crystals remain largely unexplored, despite their importance in a variety of electronic and energy conversion technologies. Enabled by advances in a four-probe thermal transport measurement method, we report the observation of glass-like thermal conductivity in ~20 nm thick single crystalline ribbons of higher manganese silicide, a complex, anisotropic…
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Size effects on vibrational modes in complex crystals remain largely unexplored, despite their importance in a variety of electronic and energy conversion technologies. Enabled by advances in a four-probe thermal transport measurement method, we report the observation of glass-like thermal conductivity in ~20 nm thick single crystalline ribbons of higher manganese silicide, a complex, anisotropic crystal with a ~10 nm scale lattice constant along the incommensurate c axis. The boundary scattering effect is strong for many vibrational modes because of a strong anisotropy in their group velocities or diffusive nature, while confinement effects are pronounced for acoustic modes with long wavelengths along the c axis. Furthermore, the transport of the non-propagating, diffusive modes is suppressed in the nanostructures by the increased incommensurability between the two substructures as a result of the unusual composition of the nanostructure samples. These unique effects point to diverse, new approaches to suppressing the lattice thermal conductivity in complex materials.
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Submitted 27 October, 2017; v1 submitted 27 August, 2017;
originally announced August 2017.
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Quasiballistic heat removal from small sources studied from first principles
Authors:
Bjorn Vermeersch,
Natalio Mingo
Abstract:
Heat sources whose characteristic dimension $R$ is comparable to phonon mean free paths display thermal resistances that exceed conventional diffusive predictions. This has direct implications to (opto)electronics thermal management and phonon spectroscopy. Theoretical analyses have so far limited themselves to particular experimental configurations. Here, we build upon the multidimensional Boltzm…
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Heat sources whose characteristic dimension $R$ is comparable to phonon mean free paths display thermal resistances that exceed conventional diffusive predictions. This has direct implications to (opto)electronics thermal management and phonon spectroscopy. Theoretical analyses have so far limited themselves to particular experimental configurations. Here, we build upon the multidimensional Boltzmann transport equation (BTE) to derive universal expressions for the apparent conductivity suppression $S(R) = κ_{\text{eff}}(R)/κ_{\text{bulk}}$ experienced by radially symmetric 2D and 3D sources. In striking analogy to cross-plane heat conduction in thin films, a distinct quasiballistic regime emerges between ballistic ($κ_{\text{eff}} \sim R$) and diffusive ($κ_{\text{eff}} \simeq κ_{\text{bulk}}$) asymptotes that displays a logarithmic dependence $κ_{\text{eff}} \sim \ln(R)$ in single crystals and fractional power dependence $κ_{\text{eff}} \sim R^{2-α}$ in alloys (with $α$ the Lévy superdiffusion exponent). Analytical solutions and Monte Carlo simulations for spherical and circular heat sources in Si, GaAs, Si$_{0.99}$Ge$_{0.01}$ and Si$_{0.82}$Ge$_{0.18}$, all carried out from first principles, confirm the predicted generic tendencies. Contrary to the thin film case, common approximations like kinetic theory estimates $κ_{\text{eff}} \simeq \sum S_ω^{\text{grey}} \, κ_ω$ and modified Fourier temperature curves perform relatively poorly. Up to threefold deviations from the BTE solutions for sub-100$\,$nm sources underline the need for rigorous treatment of multidimensional nondiffusive transport.
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Submitted 16 August, 2017;
originally announced August 2017.
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Materials Screening for the Discovery of New Half-Heuslers: Machine Learning versus Ab Initio Methods
Authors:
Fleur Legrain,
Jesús Carrete,
Ambroise van Roekeghem,
Georg K. H. Madsen,
Natalio Mingo
Abstract:
Machine learning (ML) is increasingly becoming a helpful tool in the search for novel functional compounds. Here we use classification via random forests to predict the stability of half-Heusler (HH) compounds, using only experimentally reported compounds as a training set. Cross-validation yields an excellent agreement between the fraction of compounds classified as stable and the actual fraction…
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Machine learning (ML) is increasingly becoming a helpful tool in the search for novel functional compounds. Here we use classification via random forests to predict the stability of half-Heusler (HH) compounds, using only experimentally reported compounds as a training set. Cross-validation yields an excellent agreement between the fraction of compounds classified as stable and the actual fraction of truly stable compounds in the ICSD. The ML model is then employed to screen 71,178 different 1:1:1 compositions, yielding 481 likely stable candidates. The predicted stability of HH compounds from three previous high throughput ab initio studies is critically analyzed from the perspective of the alternative ML approach. The incomplete consistency among the three separate ab initio studies and between them and the ML predictions suggests that additional factors beyond those considered by ab initio phase stability calculations might be determinant to the stability of the compounds. Such factors can include configurational entropies and quasiharmonic contributions.
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Submitted 1 June, 2017;
originally announced June 2017.
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Phonon thermal transport in 2H, 4H and 6H silicon carbide from first principles
Authors:
Nakib Haider Protik,
Ankita Katre,
Lucas Lindsay,
Jesús Carrete,
Natalio Mingo,
David Broido
Abstract:
Silicon carbide (SiC) is a wide band gap semiconductor with a variety of industrial applications. Among its many useful properties is its high thermal conductivity, which makes it advantageous for thermal management applications. In this paper we present \textit{ab initio} calculations of the in-plane and cross-plane thermal conductivities, $κ_{\text{in}}$ and $κ_{\text{out}}$, of three common hex…
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Silicon carbide (SiC) is a wide band gap semiconductor with a variety of industrial applications. Among its many useful properties is its high thermal conductivity, which makes it advantageous for thermal management applications. In this paper we present \textit{ab initio} calculations of the in-plane and cross-plane thermal conductivities, $κ_{\text{in}}$ and $κ_{\text{out}}$, of three common hexagonal polytypes of SiC: 2H, 4H and 6H. The phonon Boltzmann transport equation is solved iteratively using as input interatomic force constants determined from density functional theory. Both $κ_{\text{in}}$ and $κ_{\text{out}}$ decrease with increasing $n$ in $n$H SiC because of additional low-lying optic phonon branches. These optic branches are characterized by low phonon group velocities, and they increase the phase space for phonon-phonon scattering of acoustic modes. Also, for all $n$, $κ_{\text{in}}$ is found to be larger than $κ_{\text{out}}$ in the temperature range considered. At electron concentrations present in experimental samples, scattering of phonons by electrons is shown to be negligible except well below room temperature where it can lead to a significant reduction of the lattice thermal conductivity. This work highlights the power of \textit{ab initio} approaches in giving quantitative, predictive descriptions of thermal transport in materials. It helps explain the qualitative disagreement that exists among different sets of measured thermal conductivity data and provides information of the relative quality of samples from which measured data was obtained.
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Submitted 23 May, 2017; v1 submitted 7 May, 2017;
originally announced May 2017.
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almaBTE: a solver of the space-time dependent Boltzmann transport equation for phonons in structured materials
Authors:
Jesús Carrete,
Bjorn Vermeersch,
Ankita Katre,
Ambroise van Roekeghem,
Tao Wang,
Georg K. H. Madsen,
Natalio Mingo
Abstract:
almaBTE is a software package that solves the space- and time-dependent Boltzmann transport equation for phonons, using only ab-initio calculated quantities as inputs. The program can predictively tackle phonon transport in bulk crystals and alloys, thin films, superlattices, and multiscale structures with size features in the nm-$μ$m range. Among many other quantities, the program can output ther…
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almaBTE is a software package that solves the space- and time-dependent Boltzmann transport equation for phonons, using only ab-initio calculated quantities as inputs. The program can predictively tackle phonon transport in bulk crystals and alloys, thin films, superlattices, and multiscale structures with size features in the nm-$μ$m range. Among many other quantities, the program can output thermal conductances and effective thermal conductivities, space-resolved average temperature profiles, and heat-current distributions resolved in frequency and space. Its first-principles character makes almaBTE especially well suited to investigate novel materials and structures. This article gives an overview of the program structure and presents illustrative examples for some of its uses.
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Submitted 13 April, 2017;
originally announced April 2017.
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Exceptionally strong phonon scattering by B substitution in cubic SiC
Authors:
Ankita Katre,
Jesús Carrete,
Bonny Dongre,
Georg K. H. Madsen,
Natalio Mingo
Abstract:
We use ab-initio calculations to predict the thermal conductivity of cubic SiC with different types of defects. An excellent quantitative agreement with previous experimental measurements is found. The results unveil that B$_\mathrm{C}$ substitution has a much stronger effect than any of the other defect types in 3C-SiC, including vacancies. This finding contradicts the prediction of the classical…
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We use ab-initio calculations to predict the thermal conductivity of cubic SiC with different types of defects. An excellent quantitative agreement with previous experimental measurements is found. The results unveil that B$_\mathrm{C}$ substitution has a much stronger effect than any of the other defect types in 3C-SiC, including vacancies. This finding contradicts the prediction of the classical mass-difference model of impurity scattering, according to which the effects of B$_\mathrm{C}$ and N$_\mathrm{C}$ would be similar and much smaller than that of the C vacancy. The strikingly different behavior of the B$_\mathrm{C}$ defect arises from a unique pattern of resonant phonon scattering caused by the broken structural symmetry around the B impurity.
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Submitted 15 March, 2017;
originally announced March 2017.
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How the Chemical Composition Alone Can Predict Vibrational Free Energies and Entropies of Solids
Authors:
Fleur Legrain,
Jesús Carrete,
Ambroise van Roekeghem,
Stefano Curtarolo,
Natalio Mingo
Abstract:
Computing vibrational free energies ($F_{vib}$) and entropies ($S_{vib}$) has posed a long standing challenge to the high-throughput ab initio investigation of finite temperature properties of solids. Here we use machine-learning techniques to efficiently predict $F_{vib}$ and $S_{vib}$ of crystalline compounds in the Inorganic Crystal Structure Database. By employing descriptors based simply on t…
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Computing vibrational free energies ($F_{vib}$) and entropies ($S_{vib}$) has posed a long standing challenge to the high-throughput ab initio investigation of finite temperature properties of solids. Here we use machine-learning techniques to efficiently predict $F_{vib}$ and $S_{vib}$ of crystalline compounds in the Inorganic Crystal Structure Database. By employing descriptors based simply on the chemical formula and using a training set of only 300 compounds, mean absolute errors of less than 0.04 meV/K/atom (15 meV/atom) are achieved for $S_{vib}$ ($F_{vib}$), whose values are distributed within a range of 0.9 meV/K/atom (300 meV/atom.) In addition, for training sets containing fewer than 2,000 compounds the chemical formula alone is shown to perform as well as, if not better than, four other more complex descriptors previously used in the literature. The accuracy and simplicity of the approach mean that it can be advantageously used for the fast screening of phase diagrams or chemical reactions at finite temperatures.
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Submitted 7 March, 2017;
originally announced March 2017.
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Structural Complexity and Phonon Physics in 2D Arsenenes
Authors:
Jesús Carrete,
Luis J. Gallego,
Natalio Mingo
Abstract:
In the quest for stable 2D arsenic phases, four different structures have been recently claimed to be stable. We show that, due to phonon contributions, the relative stability of those structures differs from previous reports and depends crucially on temperature. We also show that one of those four phases is in fact mechanically unstable. Furthermore, our results challenge the common assumption of…
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In the quest for stable 2D arsenic phases, four different structures have been recently claimed to be stable. We show that, due to phonon contributions, the relative stability of those structures differs from previous reports and depends crucially on temperature. We also show that one of those four phases is in fact mechanically unstable. Furthermore, our results challenge the common assumption of an inverse correlation between structural complexity and thermal conductivity. Instead, a richer picture emerges from our results, showing how harmonic interactions, anharmonicity and symmetries all play a role in modulating thermal conduction in arsenenes. More generally, our conclusions highlight how vibrational properties are an essential element to be carefully taken into account in theoretical searches for new 2D materials.
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Submitted 10 March, 2017; v1 submitted 9 February, 2017;
originally announced February 2017.
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Unraveling the dominant phonon scattering mechanism in thermoelectric compound ZrNiSn
Authors:
Ankita Katre,
Jesús Carrete,
Natalio Mingo
Abstract:
Determining defect types and concentrations remains a big challenge of semiconductor materials science. By using ab-initio thermal conductivity calculations we reveal that Ni/vacancy antisites, and not the previously claimed Sn/Zr antisites, are the dominant defects affecting thermal transport in half-Heusler compound ZrNiSn. Our calculations correctly predict the thermal conductivity dependence w…
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Determining defect types and concentrations remains a big challenge of semiconductor materials science. By using ab-initio thermal conductivity calculations we reveal that Ni/vacancy antisites, and not the previously claimed Sn/Zr antisites, are the dominant defects affecting thermal transport in half-Heusler compound ZrNiSn. Our calculations correctly predict the thermal conductivity dependence with temperature and concentration, in quantitative agreement with published experimental results. Furthermore, we find a characteristic proportionality between phonon-antisite scattering rates and the sixth power of phonon frequency, for which we provide an analytic derivation. These results suggest that thermal conductivity measurements in combination with ab-initio calculations can be used to quantitatively assess defect types and concentrations in semiconductors.
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Submitted 13 July, 2016;
originally announced July 2016.
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High throughput thermal conductivity of high temperature solid phases: The case of oxide and fluoride perovskites
Authors:
Ambroise van Roekeghem,
Jesús Carrete,
Corey Oses,
Stefano Curtarolo,
Natalio Mingo
Abstract:
Using finite-temperature phonon calculations and machine-learning methods, we calculate the mechanical stability of about 400 semiconducting oxides and fluorides with cubic perovskite structures at 0 K, 300 K and 1000 K. We find 92 mechanically stable compounds at high temperatures -- including 36 not mentioned in the literature so far -- for which we calculate the thermal conductivity. We demonst…
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Using finite-temperature phonon calculations and machine-learning methods, we calculate the mechanical stability of about 400 semiconducting oxides and fluorides with cubic perovskite structures at 0 K, 300 K and 1000 K. We find 92 mechanically stable compounds at high temperatures -- including 36 not mentioned in the literature so far -- for which we calculate the thermal conductivity. We demonstrate that the thermal conductivity is generally smaller in fluorides than in oxides, largely due to a lower ionic charge, and describe simple structural descriptors that are correlated with its magnitude. Furthermore, we show that the thermal conductivities of most cubic perovskites decrease more slowly than the usual $T^{-1}$ behavior. Within this set, we also screen for materials exhibiting negative thermal expansion. Finally, we describe a strategy to accelerate the discovery of mechanically stable compounds at high temperatures.
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Submitted 10 June, 2016;
originally announced June 2016.
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Physically founded phonon dispersions of few-layer materials, and the case of borophene
Authors:
Jesús Carrete,
Wu Li,
Lucas Lindsay,
David A. Broido,
Luis J. Gallego,
Natalio Mingo
Abstract:
An increasing number of theoretical calculations on few-layer materials have been reporting a non-zero sound velocity for all three acoustic phonon modes. In contrast with these reports, here we show that the lowest phonon dispersion branch of atomistically described few-layer materials should be quadratic, and this can have dramatic consequencies on calculated properties, such as the thermal cond…
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An increasing number of theoretical calculations on few-layer materials have been reporting a non-zero sound velocity for all three acoustic phonon modes. In contrast with these reports, here we show that the lowest phonon dispersion branch of atomistically described few-layer materials should be quadratic, and this can have dramatic consequencies on calculated properties, such as the thermal conductivity. By reformulating the interatomic force constants (IFC) in terms of internal coordinates, we find that a delicate balance between the IFCs is responsible for this quadraticity. This balance is hard to obtain in ab-initio calculations even if all the symmetries are numerically enforced a posteriori, but it arises naturally in our approach. We demonstrate the phenomenon in the case of borophene, where a very subtle correction to the ab-initio IFCs yields the physically correct quadratic dispersion, while leaving the rest of the spectrum virtually unmodified. Such quadraticity nevertheless has a major effect on the computed lattice thermal conductivity, which in the case of borophene changes by more than a factor 2, and reverses its anisotropy, when the subtle IFC correction is put in place.
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Submitted 12 January, 2016;
originally announced January 2016.
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Anomalous thermal conductivity and suppression of negative thermal expansion in ScF3
Authors:
Ambroise van Roekeghem,
Jesús Carrete,
Natalio Mingo
Abstract:
The empty perovskite ScF3 exhibits negative thermal expansion up to 1100 K. We demonstrate that ab-initio calculations of temperature-dependent effective phonon spectra allow to quantitatively describe the behavior of this compound and the suppression of negative thermal expansion. Based on this result, we predict an anomalous temperature dependence of the thermal conductivity and interpret it as…
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The empty perovskite ScF3 exhibits negative thermal expansion up to 1100 K. We demonstrate that ab-initio calculations of temperature-dependent effective phonon spectra allow to quantitatively describe the behavior of this compound and the suppression of negative thermal expansion. Based on this result, we predict an anomalous temperature dependence of the thermal conductivity and interpret it as a general feature of the perovskite class. Finally, we comment on the fact that the suppression of negative thermal expansion at such a high temperature is beyond the reach of the quasi-harmonic approximation and we discuss this suppression based on the temperature-dependence of the mode Grüneisen parameters.
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Submitted 4 July, 2016; v1 submitted 4 January, 2016;
originally announced January 2016.
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Cross-plane heat conduction in thin films with ab-initio phonon dispersions and scattering rates
Authors:
Bjorn Vermeersch,
Jesus Carrete,
Natalio Mingo
Abstract:
We present a first-principles study of the cross-plane thermal conductivity $κ_{\perp}$ in a wide variety of semiconductor thin films. We introduce a simple suppression model that matches variance-reduced Monte Carlo simulations with ab-initio phonon dispersions and scattering rates within $\leq 5\%$ even for anisotropic compounds. This, in turn, enables accurate $κ_{\perp}$ reconstruction from ta…
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We present a first-principles study of the cross-plane thermal conductivity $κ_{\perp}$ in a wide variety of semiconductor thin films. We introduce a simple suppression model that matches variance-reduced Monte Carlo simulations with ab-initio phonon dispersions and scattering rates within $\leq 5\%$ even for anisotropic compounds. This, in turn, enables accurate $κ_{\perp}$ reconstruction from tabulated cumulative conductivity curves $κ_Σ(Λ_{\perp})$. We furthermore reveal, and explain, a distinct quasiballistic regime characterised by a fractional thickness dependence $κ_{\perp} \sim L^{2-α}$ in alloys (where $α$ is the Lévy exponent) and logarithmic dependence $κ_{\perp} \sim \ln(L)$ in single crystals. These observations culminate in the formulation of two compact parametric forms for $κ_{\perp}(L)$ that can fit the first-principles curves across the entire ballistic-diffusive range within a few percent for all investigated compounds.
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Submitted 23 April, 2016; v1 submitted 4 December, 2015;
originally announced December 2015.
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Nanograined half-Heusler semiconductors as advanced thermoelectrics: an ab-initio high-throughput statistical study
Authors:
Jesús Carrete,
Natalio Mingo,
Shidong Wang,
Stefano Curtarolo
Abstract:
Nanostructuring has spurred a revival in the field of direct thermoelectric energy conversion. Nanograined materials can now be synthesized with higher figures of merit (ZT) than the bulk counterparts. This leads to increased conversion efficiencies. Despite considerable effort in optimizing the known and discovering the unknown, technology still relies upon a few limited solutions. Here we perfor…
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Nanostructuring has spurred a revival in the field of direct thermoelectric energy conversion. Nanograined materials can now be synthesized with higher figures of merit (ZT) than the bulk counterparts. This leads to increased conversion efficiencies. Despite considerable effort in optimizing the known and discovering the unknown, technology still relies upon a few limited solutions. Here we perform ab-initio modeling of ZT for 75 nanograined compounds obtained by filtering down the 79,057 half-Heusler entries available in the AFLOWLIB.org repository according to electronic and thermodynamic criteria. For many of the compounds the $ZT$s are markedly above those attainable with nanograined IV and III-V semiconductors. About 15% of them may even outperform ZT~2 at high temperatures. Our analysis elucidates the origin of the advantageous thermoelectric properties found within this broad material class. We use machine learning techniques to unveil simple rules determining if a nanograined half-Heusler compound is likely to be a good thermoelectric given its chemical composition.
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Submitted 25 August, 2014;
originally announced August 2014.
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Superdiffusive heat conduction in semiconductor alloys -- I. Theoretical foundations
Authors:
Bjorn Vermeersch,
Jesus Carrete,
Natalio Mingo,
Ali Shakouri
Abstract:
Semiconductor alloys exhibit a strong dependence of effective thermal conductivity on measurement frequency. So far this quasi-ballistic behaviour has only been interpreted phenomenologically, providing limited insight into the underlying thermal transport dynamics. Here, we show that quasi-ballistic heat conduction in semiconductor alloys is governed by Lévy superdiffusion. By solving the Boltzma…
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Semiconductor alloys exhibit a strong dependence of effective thermal conductivity on measurement frequency. So far this quasi-ballistic behaviour has only been interpreted phenomenologically, providing limited insight into the underlying thermal transport dynamics. Here, we show that quasi-ballistic heat conduction in semiconductor alloys is governed by Lévy superdiffusion. By solving the Boltzmann transport equation (BTE) with ab initio phonon dispersions and scattering rates, we reveal a transport regime with fractal space dimension $1 < α< 2$ and superlinear time evolution of mean square energy displacement $σ^2(t) \sim t^β (1 < β< 2)$. The characteristic exponents are directly interconnected with the order $n$ of the dominant phonon scattering mechanism $τ\sim ω^{-n} (n>3)$ and cumulative conductivity spectra $κ_Σ(τ;Λ)\sim (τ;Λ)^γ$ resolved for relaxation times or mean free paths through simple relations $α= 3-β= 1 + 3/n = 2 - γ$. The quasi-ballistic transport inside alloys is no longer governed by Brownian motion, but instead dominated by Lévy dynamics. This has important implications for the interpretation of thermoreflectance (TR) measurements with modified Fourier theory. Experimental $α$ values for InGaAs and SiGe, determined through TR analysis with a novel Lévy heat formalism, match ab initio BTE predictions within a few percent. Our findings lead to a deeper and more accurate quantitative understanding of the physics of nanoscale heat flow experiments.
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Submitted 25 September, 2014; v1 submitted 27 June, 2014;
originally announced June 2014.
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Low thermal conductivity and triaxial phononic anisotropy of SnSe
Authors:
Jesús Carrete,
Natalio Mingo,
Stefano Curtarolo
Abstract:
In this theoretical study, we investigate the origins of the very low thermal conductivity of tin selenide (SnSe) using ab-initio calculations. We obtained high-temperature lattice thermal conductivity values that are close to those of amorphous compounds. We also found a strong anisotropy between the three crystallographic axes: one of the in-plane directions conducts heat much more easily than t…
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In this theoretical study, we investigate the origins of the very low thermal conductivity of tin selenide (SnSe) using ab-initio calculations. We obtained high-temperature lattice thermal conductivity values that are close to those of amorphous compounds. We also found a strong anisotropy between the three crystallographic axes: one of the in-plane directions conducts heat much more easily than the other. Our results are compatible with most of the experimental literature on SnSe, and differ markedly from the more isotropic values reported by a recent study.
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Submitted 14 August, 2014; v1 submitted 13 June, 2014;
originally announced June 2014.
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Finding unprecedentedly low-thermal-conductivity half-Heusler semiconductors via high-throughput materials modeling
Authors:
Jesús Carrete,
Wu Li,
Natalio Mingo,
Shidong Wang,
Stefano Curtarolo
Abstract:
The lattice thermal conductivity (κω) is a key property for many potential applications of compounds. Discovery of materials with very low or high κω remains an experimental challenge due to high costs and time-consuming synthesis procedures. High-throughput computational pre-screening is a valuable approach for significantly reducing the set of candidate compounds. In this article, we introduce e…
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The lattice thermal conductivity (κω) is a key property for many potential applications of compounds. Discovery of materials with very low or high κω remains an experimental challenge due to high costs and time-consuming synthesis procedures. High-throughput computational pre-screening is a valuable approach for significantly reducing the set of candidate compounds. In this article, we introduce efficient methods for reliably estimating the bulk κω for a large number of compounds. The algorithms are based on a combination of machine-learning algorithms, physical insights, and automatic ab-initio calculations. We scanned approximately 79,000 half-Heusler entries in the AFLOWLIB.org database. Among the 450 mechanically stable ordered semiconductors identified, we find that κω spans more than two orders of magnitude- a much larger range than that previously thought. κω is lowest for compounds whose elements in equivalent positions have large atomic radii. We then perform a thorough screening of thermodynamical stability that allows to reduce the list to 77 systems. We can then provide a quantitative estimate of κω for this selected range of systems. Three semiconductors having κω < 5 W /(m K) are proposed for further experimental study.
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Submitted 21 February, 2014; v1 submitted 10 January, 2014;
originally announced January 2014.
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Compositionally-modulated Si1-xGex multilayers with cross-plane thermal conductivity below the thin-film alloy limit
Authors:
Peixuan Chen,
N. A. Katcho,
J. P. Feser,
Wu Li,
M. Glaser,
O. G. Schmidt,
David G. Cahill,
N. Mingo,
A. Rastelli
Abstract:
We describe epitaxial Ge/Si multilayers with cross-plane thermal conductivities which can be systematically reduced to exceptionally low values, as compared both with bulk and thin-film SiGe alloys of the same average concentration, by simply changing the thicknesses of the constituent layers. Ab initio calculations reveal that partial interdiffusion of Ge into the Si spacers, which naturally resu…
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We describe epitaxial Ge/Si multilayers with cross-plane thermal conductivities which can be systematically reduced to exceptionally low values, as compared both with bulk and thin-film SiGe alloys of the same average concentration, by simply changing the thicknesses of the constituent layers. Ab initio calculations reveal that partial interdiffusion of Ge into the Si spacers, which naturally results from Ge segregation during growth, plays a determinant role, lowering the thermal conductivity below what could be achieved without interdiffusion (perfect superlattice), or with total interdiffusion (alloy limit). This phenomenon is similar to the one previously observed in alloys with embedded nanoparticles, and it stresses the importance of combining alloy and nanosized scatterers simultaneously to minimize thermal conductivity. Our calculations thus suggest that superlattices with sharp interfaces, which are commonly sought but difficult to realize, are worse than compositionally-modulated Si1-xGex multilayers in the search for materials with ultralow thermal conductivities.
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Submitted 3 January, 2013;
originally announced January 2013.
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The role of lighter and heavier embedded nanoparticles on the thermal conductivity of SiGe alloys
Authors:
A. Kundu,
N. Mingo,
D. A. Broido,
D. A. Stewart
Abstract:
We have used an atomistic {\it ab initio} approach with no adjustable parameters to compute the lattice thermal conductivity of Si$_{0.5}$Ge$_{0.5}$ with a low concentration of embedded Si or Ge nanoparticles of diameters up to 4.4 nm. Through exact Green's function calculation of the nanoparticle scattering rates, we find that embedding Ge nanoparticles in $\text{Si}_{0.5}\text{Ge}_{0.5}$ provide…
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We have used an atomistic {\it ab initio} approach with no adjustable parameters to compute the lattice thermal conductivity of Si$_{0.5}$Ge$_{0.5}$ with a low concentration of embedded Si or Ge nanoparticles of diameters up to 4.4 nm. Through exact Green's function calculation of the nanoparticle scattering rates, we find that embedding Ge nanoparticles in $\text{Si}_{0.5}\text{Ge}_{0.5}$ provides 20% lower thermal conductivities than embedding Si nanoparticles. This contrasts with the Born approximation which predicts an equal amount of reduction for the two cases, irrespective of the sign of the mass difference. Despite these differences, we find that the Born approximation still performs remarkably well, and it permits investigation of larger nanoparticle sizes, up to 60 nm in diameter, not feasible with the exact approach.
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Submitted 31 August, 2011;
originally announced August 2011.
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Diameter dependence of SiGe nanowire thermal conductivity
Authors:
Zhao Wang,
N. Mingo
Abstract:
We theoretically compute the thermal conductivity of SiGe alloy nanowires as a function of nanowire diameter, alloy concentration, and temperature, obtaining a satisfactory quantitative agreement with experimental results. Our results account for the weaker diameter dependence of the thermal conductivity recently observed in Si$_{1-x}$Ge$_x$ nanowires ($x<0.1$), as compared to pure Si nanowires. W…
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We theoretically compute the thermal conductivity of SiGe alloy nanowires as a function of nanowire diameter, alloy concentration, and temperature, obtaining a satisfactory quantitative agreement with experimental results. Our results account for the weaker diameter dependence of the thermal conductivity recently observed in Si$_{1-x}$Ge$_x$ nanowires ($x<0.1$), as compared to pure Si nanowires. We also present calculations in the full range of alloy concentrations, $0 \leq x \leq 1$, which may serve as a basis for comparison with future experiments on high alloy concentration nanowires.
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Submitted 8 April, 2011;
originally announced April 2011.
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Surface roughness and thermal conductivity of semiconductor nanowires: going below the Casimir limit
Authors:
Jesús Carrete,
Luis Javier Gallego,
Luis Miguel Varela,
Natalio Mingo
Abstract:
By explicitly considering surface roughness at the atomic level, we quantitatively show that the thermal conductivity of Si nanowires can be lower than Casimir's classical limit. However, this violation only occurs for deep surface degradation. For shallow surface roughness, the Casimir formula is shown to yield a good approximation to the phonon mean free paths and conductivity, even for nanowire…
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By explicitly considering surface roughness at the atomic level, we quantitatively show that the thermal conductivity of Si nanowires can be lower than Casimir's classical limit. However, this violation only occurs for deep surface degradation. For shallow surface roughness, the Casimir formula is shown to yield a good approximation to the phonon mean free paths and conductivity, even for nanowire diameters as thin as 2.22 nm. Our exact treatment of roughness scattering is in stark contrast with a previously proposed perturbative approach, which is found to overpredict scattering rates by an order of magnitude. The obtained results suggest that a complete theoretical understanding of some previously published experimental results is still lacking.
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Submitted 18 March, 2011;
originally announced March 2011.
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Reducing the thermal conductivity of carbon nanotubes below the random isotope limit
Authors:
Gabriel Stoltz,
Natalio Mingo,
Francesco Mauri
Abstract:
We find that introducing segmented isotopic disorder patterns may considerably reduce the thermal conductivity of pristine carbon nanotubes below the uncorrelated disorder value. This is a result of the interplay between different length scales in the phonon scattering process. We use ab-initio atomistic Green's function calculations to quantify the effect of various types of segmentation simila…
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We find that introducing segmented isotopic disorder patterns may considerably reduce the thermal conductivity of pristine carbon nanotubes below the uncorrelated disorder value. This is a result of the interplay between different length scales in the phonon scattering process. We use ab-initio atomistic Green's function calculations to quantify the effect of various types of segmentation similar to that experimentally produced by coalescence of isotope-engineered fullerenes.
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Submitted 27 August, 2009;
originally announced August 2009.
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Interface heat transfer between crossing carbon nanotubes, and the thermal conductivity of nanotube pellets
Authors:
Y. Chalopin,
S. Volz,
N. Mingo
Abstract:
We theoretically compute the interface thermal resistance between crossing single walled carbon nanotubes of various chiralities, using an atomistic Green's function approach with semi-empirical potentials. The results are then used to model the thermal conductivity of three dimensional nanotube pellets in vacuum. For an average nanotube length of 1 $μ$m, the model yields an upper bound for the…
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We theoretically compute the interface thermal resistance between crossing single walled carbon nanotubes of various chiralities, using an atomistic Green's function approach with semi-empirical potentials. The results are then used to model the thermal conductivity of three dimensional nanotube pellets in vacuum. For an average nanotube length of 1 $μ$m, the model yields an upper bound for the thermal conductivity of densely compacted pellets, of the order of a few W/m-K. This is in striking contrast with the ultra-high thermal conductivity reported on individually suspended nanotubes. The results suggest that nanotube pellets might have an application as thermal insulators.
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Submitted 16 September, 2008;
originally announced September 2008.
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Phonon Transport in Amorphous-Coated Nanowires: an Atomistic Green Function Approach
Authors:
N. Mingo,
Liu Yang
Abstract:
An approach is presented for the atomistic study of phonon transport in real dielectric nanowires via Green functions. The formalism is applied to investigate the phonon flow through nanowires coated by an amorphous material. Examples for a simple model system, and for real Si nanowires coated by silica are given. New physical results emerge for these systems, regarding the character of the tran…
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An approach is presented for the atomistic study of phonon transport in real dielectric nanowires via Green functions. The formalism is applied to investigate the phonon flow through nanowires coated by an amorphous material. Examples for a simple model system, and for real Si nanowires coated by silica are given. New physical results emerge for these systems, regarding the character of the transition from ballistic to diffusive transport, the low temperature thermal conductance, and the influence of the wire-coating interface on the thermal transport. An efficient treatment of phonon scattering by the amorphous coating is also developed, representing a valuable tool for the investigation of thermal conduction through amorphous-coated nanowires.
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Submitted 15 October, 2003;
originally announced October 2003.
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Calculation of nanowire thermal conductivity using complete phonon dispersion relations
Authors:
N. Mingo
Abstract:
The lattice thermal conductivity of crystalline Si nanowires is calculated. The calculation uses complete phonon dispersions, and does not require any externally imposed frequency cutoffs. No adjustment to nanowire thermal conductivity measurements is required. Good agreement with experimental results for nanowires wider than 35 nm is obtained. A formulation in terms of the transmission function…
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The lattice thermal conductivity of crystalline Si nanowires is calculated. The calculation uses complete phonon dispersions, and does not require any externally imposed frequency cutoffs. No adjustment to nanowire thermal conductivity measurements is required. Good agreement with experimental results for nanowires wider than 35 nm is obtained. A formulation in terms of the transmission function is given. Also, the use of a simpler, nondispersive "Callaway formula", is discussed from the complete dispersions perspective.
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Submitted 27 August, 2003;
originally announced August 2003.