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The mechanism of caesium intercalation of graphene
Authors:
M. Petrovic,
I. Srut Rakic,
S. Runte,
C. Busse,
J. T. Sadowski,
P. Lazic,
I. Pletikosic,
Z. -H. Pan,
M. Milun,
P. Pervan,
N. Atodiresei,
R. Brako,
D. Sokcevic,
T. Valla,
T. Michely,
M. Kralj
Abstract:
Properties of many layered materials, including copper- and iron-based superconductors, topological insulators, graphite and epitaxial graphene can be manipulated by inclusion of different atomic and molecular species between the layers via a process known as intercalation. For example, intercalation in graphite can lead to superconductivity and is crucial in the working cycle of modern batteries…
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Properties of many layered materials, including copper- and iron-based superconductors, topological insulators, graphite and epitaxial graphene can be manipulated by inclusion of different atomic and molecular species between the layers via a process known as intercalation. For example, intercalation in graphite can lead to superconductivity and is crucial in the working cycle of modern batteries and supercapacitors. Intercalation involves complex diffusion processes along and across the layers, but the microscopic mechanisms and dynamics of these processes are not well understood. Here we report on a novel mechanism for intercalation and entrapment of alkali-atoms under epitaxial graphene. We find that the intercalation is adjusted by the van der Waals interaction, with the dynamics governed by defects anchored to graphene wrinkles. Our findings are relevant for the future design and application of graphene-based nano-structures. Similar mechanisms can also play a role for intercalation of layered materials.
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Submitted 18 November, 2013; v1 submitted 15 November, 2013;
originally announced November 2013.
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Finding the bare band: Electron coupling to two phonon modes in potassium-doped graphene on Ir(111)
Authors:
Ivo Pletikosić,
Marko Kralj,
Milorad Milun,
Petar Pervan
Abstract:
We analyze renormalization of the pi band of n-doped epitaxial graphene on Ir(111) induced by electron-phonon coupling. Our procedure of extracting the bare band relies on recursive self-consistent refining of the functional form of the bare-band until the convergence. We demonstrate that the components of the self-energy, as well as the spectral intensity obtained from angle-resolved photoelectro…
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We analyze renormalization of the pi band of n-doped epitaxial graphene on Ir(111) induced by electron-phonon coupling. Our procedure of extracting the bare band relies on recursive self-consistent refining of the functional form of the bare-band until the convergence. We demonstrate that the components of the self-energy, as well as the spectral intensity obtained from angle-resolved photoelectron spectroscopy (ARPES) show that the renormalization is due to the coupling to two distinct phonon excitations. From the velocity renormalization and an increase of the imaginary part of the self-energy we find the electron-phonon coupling constant to be ~0.2, which is in fair agreement with a previous study of the same system, despite the notable difference in the width of spectroscopic curves. Our experimental results also suggest that potassium intercalated between graphene and Ir(111) does not introduce any additional increase of the quasiparticle scattering rate.
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Submitted 17 April, 2012; v1 submitted 3 January, 2012;
originally announced January 2012.
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Graphene on Ir(111) characterized by angle-resolved photoemission
Authors:
M. Kralj,
I. Pletikosic,
M. Petrovic,
P. Pervan,
M. Milun,
A. T. N'Diaye,
C. Busse,
T. Michely,
J. Fujii,
I. Vobornik
Abstract:
Angle resolved photoelectron spectroscopy (ARPES) is extensively used to characterize the dependence of the electronic structure of graphene on Ir(111) on the preparation process. ARPES findings reveal that temperature programmed growth alone or in combination with chemical vapor deposition leads to graphene displaying sharp electronic bands. The photoemission intensity of the Dirac cone is monito…
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Angle resolved photoelectron spectroscopy (ARPES) is extensively used to characterize the dependence of the electronic structure of graphene on Ir(111) on the preparation process. ARPES findings reveal that temperature programmed growth alone or in combination with chemical vapor deposition leads to graphene displaying sharp electronic bands. The photoemission intensity of the Dirac cone is monitored as a function of the increasing graphene area. Electronic features of the moiré superstructure present in the system, namely minigaps and replica bands are examined and used as robust features to evaluate graphene uniformity. The overall dispersion of the pi-band is analyzed. Finally, by the variation of photon energy, relative changes of the pi- and sigma-band intensities are demonstrated.
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Submitted 9 August, 2011; v1 submitted 20 May, 2011;
originally announced May 2011.
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Oscillatory Electron-Phonon Coupling in Ultra-Thin Silver Films on V(100)
Authors:
T. Valla,
M. Kralj,
A. Siber,
M. Milun,
P. Pervan,
P. D. Johnson,
D. P. Woodruff
Abstract:
The temperature dependence of peak widths in high resolution angle-resolved photoelectron spectroscopy from quantum well states in ultra thin Ag films on V(100) has been used to determine the electron-phonon coupling constant, lambda, for films of thickness 1-8 layers. A strong oscillatory variation in coupling strength is observed as a function of film thickness, peaking at a 2 layer film for w…
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The temperature dependence of peak widths in high resolution angle-resolved photoelectron spectroscopy from quantum well states in ultra thin Ag films on V(100) has been used to determine the electron-phonon coupling constant, lambda, for films of thickness 1-8 layers. A strong oscillatory variation in coupling strength is observed as a function of film thickness, peaking at a 2 layer film for which lambda~1. A simple theory incorporating interaction of the photo-hole with the thermal vibrations of the potential step at the adlayer-vacuum interface is shown to reproduce the main features of these results.
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Submitted 14 July, 2000;
originally announced July 2000.
