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Graphene based sensors: theoretical study
Authors:
Karolina Z. Milowska,
Jacek A. Majewski
Abstract:
Graphene, a 2-dimensional monolayer form of sp2 hybridizated carbon atoms, is attracting increasing attention due to its unique and superior physicochemical properties. Covalently functionalized graphene layers, with their modifiable chemical functionality and usefull electrical properties, are excellent candidates for broad range of sensors, suitable for biomedical, optoelectronic and environment…
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Graphene, a 2-dimensional monolayer form of sp2 hybridizated carbon atoms, is attracting increasing attention due to its unique and superior physicochemical properties. Covalently functionalized graphene layers, with their modifiable chemical functionality and usefull electrical properties, are excellent candidates for broad range of sensors, suitable for biomedical, optoelectronic and environmental applications. Here, we present extensive study of transport properties of sensors based on covalently functionalized graphene monolayer (GML) with graphene electrodes. The transmissions, density of states and current-voltage characterisctics supported by analysis of charge distribution of GML functionalized by -CH3, -CH2, -NH2, -NH and -OH fragments have been calculated by means of density functional theory (DFT) and non-equilibrium Green's function (NEGF). Further, we demonstrate how to control the device sensitivity by manipulating: (i) concentration, (ii) particular arrangement, and (iii) type of surface groups. We explain the underlying detection physical mechanisms. Comparisons of the theoretical results to available experimental data are provided are made and show good agreement.
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Submitted 8 August, 2014; v1 submitted 31 March, 2014;
originally announced April 2014.
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Contrasting Elastic Properties of Heavily B- and N-doped Graphene, with Random Distributions Including Aggregates
Authors:
Karolina Z. Milowska,
Magdalena Woinska,
Malgorzata Wierzbowska
Abstract:
We focused on elastic properties of B- and N-doped graphene in wide range of concentrations up to 20%. The Young's, bulk and shear moduli and Poisson's ratio have been calculated by means of the density functional theory for a representative set of supercells with disordered impurity patterns including aggregates. In contrast to earlier work, it is demonstrated that do** with nitrogen even stren…
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We focused on elastic properties of B- and N-doped graphene in wide range of concentrations up to 20%. The Young's, bulk and shear moduli and Poisson's ratio have been calculated by means of the density functional theory for a representative set of supercells with disordered impurity patterns including aggregates. In contrast to earlier work, it is demonstrated that do** with nitrogen even strengthens the graphene layers, whereas incorporation of boron induces large structural and morphological changes seen in simulated STM images. Young's and shear moduli increase or decrease with the do** strength for nitrogen or boron, respectively, while bulk modulus and Poisson's ratio exhibit opposite trends. Elastic properties of samples for both types of impurities are strongly related to the electronic structures, especially for heavy do** (>12%). Local arrangements of dopants and an agregation or separation of impurities play crucial role in the determination of stiffness in the investigated systems. Interestingly, these findings are opossed for B- and N-contained samples.
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Submitted 13 September, 2013; v1 submitted 8 April, 2013;
originally announced April 2013.
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Hole sp3-character and delocalization in (Ga,Mn)As revised with pSIC and MLWF approaches - newly found spin-unpolarized gap states of s-type below 1% of Mn
Authors:
Karolina Z. Milowska,
Malgorzata Wierzbowska
Abstract:
The dilute magnetic semiconductor (Ga,Mn)As is ferromagnetic in accordance with the p-d Zener model. Hole density function (HDF) localization has been previously studied by means of the density functional theory (DFT) and non-standard DFT methods; however not for do**s near 1%. We have revised (Ga,Mn)As using the DFT with the pseudopotential self-interaction correction (pSIC) and maximally-local…
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The dilute magnetic semiconductor (Ga,Mn)As is ferromagnetic in accordance with the p-d Zener model. Hole density function (HDF) localization has been previously studied by means of the density functional theory (DFT) and non-standard DFT methods; however not for do**s near 1%. We have revised (Ga,Mn)As using the DFT with the pseudopotential self-interaction correction (pSIC) and maximally-localized Wannier functions (MLWFs), which show the sp3 character of a HDF. Nature of HDF is extended - for low do**s and the pSIC, 70% of the HDF is located within the inter-impurities region, and contribution of the 3d-Mn states is 3-5% for 1-3% of Mn with the pSIC, and 11% with the DFT. We found that for do**s below 1%, the spin-unpolarized s-type impurity states segregate from the conduction band to the energy gap - in contrast to earlier publications. This implies that donor co-doped dilute samples would be both insulating and nonmagnetic.
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Submitted 5 January, 2014; v1 submitted 21 February, 2013;
originally announced February 2013.
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Electronic structure of graphene functionalized with boron and nitrogen
Authors:
Magdalena Woinska,
Karolina Z. Milowska,
Jacek A. Majewski
Abstract:
We present a theoretical study of the structural and electronic properties of graphene monolayer functionalized with boron and nitrogen atoms substituting carbon atoms. Our study is based on the ab initio calculations in the framework of the density functional theory. We calculate the binding energies of the functionalized systems, changes in the morphology caused by functionalization, and further…
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We present a theoretical study of the structural and electronic properties of graphene monolayer functionalized with boron and nitrogen atoms substituting carbon atoms. Our study is based on the ab initio calculations in the framework of the density functional theory. We calculate the binding energies of the functionalized systems, changes in the morphology caused by functionalization, and further the band gap energy as a function of the concentration of dopants. Moreover, we address the problem of possible clustering of dopants at a given concentration. We define the clustering parameter to quantify the dependence of the properties of the functionalized systems on the distribution of B/N atoms.
We show that clustering of B/N atoms in graphene is energetically unfavorable in comparison to the homogenous distribution of dopants. For most of the structures, we observe a nonzero energy gap that is only slightly dependent on the concentration of the substituent atoms.
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Submitted 16 January, 2013;
originally announced January 2013.
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Stability and electronic structure of covalently functionalized graphene layers
Authors:
Karolina Z. Milowska,
Jacek A. Majewski
Abstract:
We present exemplary results of extensive studies of mechanical, electronic and transport properties of covalent functionalization of graphene monolayers (GML) with -NH2. We report new results of ab initio studies of covalent functionalization of GML with -NH2 groups up to 12.5% concentration. Our studies are performed in the framework of the density functional theory (DFT) and non-equilibrium Gre…
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We present exemplary results of extensive studies of mechanical, electronic and transport properties of covalent functionalization of graphene monolayers (GML) with -NH2. We report new results of ab initio studies of covalent functionalization of GML with -NH2 groups up to 12.5% concentration. Our studies are performed in the framework of the density functional theory (DFT) and non-equilibrium Green's function (NEGF). We discuss the stability (adsorption energy), elastic moduli, electronic structure, band gaps, and effective electron masses as a function of the density of the adsorbed molecules. We also show the conductance and I(V) characteristic of these systems. Generally, the stability of the functionalized graphene layers decreases with the growing concentration of attachments and we determine the critical density of the molecules that can be chemisorbed on the surface of GLs. Because of local deformations of GLs and sp3 rehybridization of the bonds induced by fragments, elastic moduli decrease with increasing number of groups. Simultaneously, we observe that the functionalizing molecules stretch the graphenes lattice, the effect being more pronounced for higher concentration of adsorbed molecules. We find out that the GLs functionalization leads in many cases to the opening of the graphene band gap (up to 0.5302 eV for 12.5% concentration) and can be therefore utilized in graphene devices. The new HOMO and LUMO originate mostly from the impurity bands induced by the functionalization and they exhibit parabolic dispersion with electron effective masses comparable to ones in silicon or gallium nitride.
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Submitted 23 January, 2014; v1 submitted 16 January, 2013;
originally announced January 2013.
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Elastic Properties of Functionalized Carbon Nanotubes
Authors:
Karolina Z. Milowska,
Jacek A. Majewski
Abstract:
We study the effects of covalent functionalization of single wall carbon nanotubes (CNT) on their elastic properties. We consider simple organic molecules -NH, -NH2, -CH2, -CH3, -OH attached to CNTs' surface at various densities. The studies are based on the first principles calculations in the framework of density functional theory. We have determined the changes in the geometry and the elastic m…
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We study the effects of covalent functionalization of single wall carbon nanotubes (CNT) on their elastic properties. We consider simple organic molecules -NH, -NH2, -CH2, -CH3, -OH attached to CNTs' surface at various densities. The studies are based on the first principles calculations in the framework of density functional theory. We have determined the changes in the geometry and the elastic moduli of the functionalized CNTs as a function of the density of adsorbed molecules. It turns out that elastic moduli diminish with increasing concentration of adsorbands, however, the functionalized CNTs remain strong enough to be suitable for reinforcement of composites. The strongest effect is observed for CNTs functionalized with -CH2 radical, where the Young's modulus of the functionalized system is by 30% smaller than in the pristine CNTs.
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Submitted 27 June, 2013; v1 submitted 24 October, 2012;
originally announced October 2012.
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Functionalization of carbon nanotubes with -CHn, -NHn fragments, -COOH and -OH groups
Authors:
Karolina Z. Milowska,
Jacek A. Majewski
Abstract:
We present results of extensive theoretical studies concerning stability, morphology, and band structure of single wall carbon nanotubes (CNTs) covalently functionalized by -CHn(for n=2,3,4),-NHn(for n=1,2,3,4),-COOH and -OH groups. Our studies are based on ab initio calculations in the framework of the density functional theory. We determine the dependence of the binding energies on the concentra…
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We present results of extensive theoretical studies concerning stability, morphology, and band structure of single wall carbon nanotubes (CNTs) covalently functionalized by -CHn(for n=2,3,4),-NHn(for n=1,2,3,4),-COOH and -OH groups. Our studies are based on ab initio calculations in the framework of the density functional theory. We determine the dependence of the binding energies on the concentration of the adsorbed molecules, critical densities of adsorbed molecules, global and local changes in the morphology, and electronic structure paying particular attention to the functionalization induced changes of the band gaps. These studies reveal physical mechanisms that determine stability and electronic structure of those systems and also provide valuable theoretical predictions relevant for application. Functionalization of CNTs causes generally their elongation and locally sp2 -> sp3 rehybridization in the neighborhood of chemisorbed groups. For adsorbants making particularly strong covalent bonds with the CNTs(-CH2), we observe formation of the 5/7 defects. In CNTs functionalized with -CH2,-NH4, and -OH, we determine critical density of molecules that could be covalently bound to CNTs. Functionalization of CNTs can be utilized for band gap engineering and also lead to changes in their metallic/semiconductor character. In semiconducting CNTs, adsorbants such as -CH3,-NH2,-OH and -COOH, introduce 'impurity' bands in the band gap of pristine CNTs. In the case of -CH3,-NH2, the induced band gaps are typically smaller than in the pure CNT and depend strongly on the concentration of adsorbants. However, functionalization of semiconducting CNTs with -OH leads to the metallization of CNTs. On the other hand, the functionalization of semi-metallic (9,0)CNT with -CH2 causes the increase of the band gap and induces semi-metal to semiconductor transition.
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Submitted 19 May, 2013; v1 submitted 7 September, 2012;
originally announced September 2012.