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Evidence of Flat Bands and Correlated States in Buckled Graphene Superlattices
Authors:
**hai Mao,
Slaviša P. Milovanović,
Miša Anđelković,
Xinyuan Lai,
Yang Cao,
Kenji Watanabe,
Takashi Taniguchi,
Lucian Covaci,
Francois M. Peeters,
Andre K. Geim,
Yuhang Jiang,
Eva Y. Andrei
Abstract:
Two-dimensional atomic crystals can radically change their properties in response to external influences such as substrate orientation or strain, resulting in essentially new materials in terms of the electronic structure. A striking example is the creation of flat-bands in bilayer-graphene for certain 'magic' twist-angles between the orientations of the two layers. The quenched kinetic-energy in…
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Two-dimensional atomic crystals can radically change their properties in response to external influences such as substrate orientation or strain, resulting in essentially new materials in terms of the electronic structure. A striking example is the creation of flat-bands in bilayer-graphene for certain 'magic' twist-angles between the orientations of the two layers. The quenched kinetic-energy in these flat-bands promotes electron-electron interactions and facilitates the emergence of strongly-correlated phases such as superconductivity and correlated-insulators. However, the exquisite fine-tuning required for finding the magic-angle where flat-bands appear in twisted-bilayer graphene, poses challenges to fabrication and scalability. Here we present an alternative route to creating flat-bands that does not involve fine tuning. Using scanning tunneling microscopy and spectroscopy, together with numerical simulations, we demonstrate that graphene monolayers placed on an atomically-flat substrate can be forced to undergo a buckling-transition, resulting in a periodically modulated pseudo-magnetic field, which in turn creates a post-graphene material with flat electronic bands. Bringing the Fermi-level into these flat-bands by electrostatic do**, we observe a pseudogap-like depletion in the density-of-states, which signals the emergence of a correlated-state. The described approach of 2D crystal buckling offers a strategy for creating other superlattice systems and, in particular, for exploring interaction phenomena characteristic of flat-bands.
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Submitted 31 May, 2020;
originally announced June 2020.
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Composite super-moiré lattices in double aligned graphene heterostructures
Authors:
Zihao Wang,
Yi Bo Wang,
J. Yin,
E. Tóvári,
Y. Yang,
L. Lin,
M. Holwill,
J. Birkbeck,
D. J. Perello,
Shuigang Xu,
J. Zultak,
R. V. Gorbachev,
A. V. Kretinin,
T. Taniguchi,
K. Watanabe,
S. V. Morozov,
M. Anđelković,
S. P. Milovanović,
L. Covaci,
F. M. Peeters,
A. Mishchenko,
A. K. Geim,
K. S. Novoselov,
Vladimir I. Fal'ko,
Angelika Knothe
, et al. (1 additional authors not shown)
Abstract:
When two-dimensional atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals can start influencing each others electronic properties. Of particular interest is the situation when the periodicity of the two crystals closely match and a moiré pattern forms, which results in specific electron scattering, reconstruction of electronic and excitoni…
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When two-dimensional atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals can start influencing each others electronic properties. Of particular interest is the situation when the periodicity of the two crystals closely match and a moiré pattern forms, which results in specific electron scattering, reconstruction of electronic and excitonic spectra, crystal reconstruction, and many other effects. Thus, formation of moiré patterns is a viable tool of controlling the electronic properties of 2D materials. At the same time, the difference in the interatomic distances for the two crystals combined, determines the range in which the electronic spectrum is reconstructed, and thus is a barrier to the low energy regime. Here we present a way which allows spectrum reconstruction at all energies. By using graphene which is aligned simultaneously to two hexagonal boron nitride layers, one can make electrons scatter in the differential moiré pattern, which can have arbitrarily small wavevector and, thus results in spectrum reconstruction at arbitrarily low energies. We demonstrate that the strength of such a potential relies crucially on the atomic reconstruction of graphene within the differential moiré super-cell. Such structures offer further opportunity in tuning the electronic spectra of two-dimensional materials.
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Submitted 27 December, 2019;
originally announced December 2019.
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Band flattening in buckled monolayer graphene
Authors:
S. P. Milovanović,
M. Anđelković,
L. Covaci,
F. M. Peeters
Abstract:
The strain fields of periodically buckled graphene induce a periodic pseudo-magnetic field (PMF) that modifies the electronic band structure. From the geometry, amplitude, and period of the periodic pseudo-magnetic field, we determine the necessary conditions to access the regime of correlated phases by examining the band flattening. As compared to twisted bilayer graphene the proposed system has…
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The strain fields of periodically buckled graphene induce a periodic pseudo-magnetic field (PMF) that modifies the electronic band structure. From the geometry, amplitude, and period of the periodic pseudo-magnetic field, we determine the necessary conditions to access the regime of correlated phases by examining the band flattening. As compared to twisted bilayer graphene the proposed system has the advantages that: 1) only a single layer of graphene is needed, 2) one is not limited to hexagonal superlattices, and 3) narrower flat bandwidth and larger separation between flat bands can be induced. We, therefore, propose that periodically strained graphene single layers can become a platform for the exploration of exotic many-body phases.
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Submitted 15 December, 2020; v1 submitted 25 October, 2019;
originally announced October 2019.
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Double moiré with a twist: super-moiré in encapsulated graphene
Authors:
M. Anđelković,
S. P. Milovanović,
L. Covaci,
F. M. Peeters
Abstract:
A periodic spatial modulation, as created by a moiré pattern, has been extensively studied with the view to engineer and tune the properties of graphene. Graphene encapsulated by hexagonal boron nitride (hBN) when slightly misaligned with the top and bottom hBN layers experiences two interfering moiré patterns, resulting in a so-called super-moiré (SM). This leads to a lattice and electronic spect…
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A periodic spatial modulation, as created by a moiré pattern, has been extensively studied with the view to engineer and tune the properties of graphene. Graphene encapsulated by hexagonal boron nitride (hBN) when slightly misaligned with the top and bottom hBN layers experiences two interfering moiré patterns, resulting in a so-called super-moiré (SM). This leads to a lattice and electronic spectrum reconstruction. A geometrical construction of the non-relaxed SM patterns allows us to indicate qualitatively the induced changes in the electronic properties and to locate the SM features in the density of states and in the conductivity. To emphasize the effect of lattice relaxation, we report band gaps at all Dirac-like points in the hole doped part of the reconstructed spectrum, which are expected to be enhanced when including interaction effects. Our result is able to distinguish effects due to lattice relaxation and due to the interfering SM and provides a clear picture on the origin of recently experimentally observed effects in such trilayer heterostuctures.
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Submitted 1 October, 2019;
originally announced October 2019.
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Molecular collapse in monolayer graphene
Authors:
Robbe Van Pottelberge,
Dean Moldovan,
S. P. Milovanovic,
Francois M. Peeters
Abstract:
Atomic collapse is a phenomenon inherent to relativistic quantum mechanics where electron states dive in the positron continuum for highly charged nuclei. This phenomenon was recently observed in graphene. Here we investigate a novel collapse phenomenon when multiple sub- and supercritical charges of equal strength are put close together as in a molecule. We construct a phase diagram which consist…
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Atomic collapse is a phenomenon inherent to relativistic quantum mechanics where electron states dive in the positron continuum for highly charged nuclei. This phenomenon was recently observed in graphene. Here we investigate a novel collapse phenomenon when multiple sub- and supercritical charges of equal strength are put close together as in a molecule. We construct a phase diagram which consists of three distinct regions: 1) subcritical, 2) frustrated atomic collapse, and 3) molecular collapse. We show that the single impurity atomic collapse resonances rearrange themselves to form molecular collapse resonances which exhibit a distinct quasi-bonding, anti-bonding and non-bonding character. Here we limit ourselves to a systems consisting of two and three charges. We show that by tuning the distance between the charges and their strength a high degree of control over the molecular collapse resonances can be achieved.
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Submitted 2 September, 2019;
originally announced September 2019.
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Flat Bands in Buckled Graphene Superlattices
Authors:
Yuhang Jiang,
Miša Anđelković,
Slaviša P. Milovanović,
Lucian Covaci,
Xinyuan Lai,
Yang Cao,
Kenji Watanabe,
Takashi Taniguchi,
Francois M. Peeters,
Andre K. Geim,
Eva Y. Andrei
Abstract:
Interactions between stacked two-dimensional (2D) atomic crystals can radically change their properties, leading to essentially new materials in terms of the electronic structure. Here we show that monolayers placed on an atomically flat substrate can be forced to undergo a buckling transition, which results in periodically strained superlattices. By using scanning tunneling microscopy and spectro…
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Interactions between stacked two-dimensional (2D) atomic crystals can radically change their properties, leading to essentially new materials in terms of the electronic structure. Here we show that monolayers placed on an atomically flat substrate can be forced to undergo a buckling transition, which results in periodically strained superlattices. By using scanning tunneling microscopy and spectroscopy and support from numerical simulations, we show that such lateral superlattices in graphene lead to a periodically modulated pseudo-magnetic field, which in turn creates a post-graphene material with flat electronic bands. The described approach of controllable buckling of 2D crystals offers a venue for creating other superlattice systems and, in particular, for exploring interaction phenomena characteristic of flat bands.
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Submitted 23 April, 2019;
originally announced April 2019.
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Strain field in graphene induced by nanopillar mesh
Authors:
S. P. Milovanovic,
L. Covaci,
F. M. Peeters
Abstract:
The mechanical and electronic properties of a graphene membrane placed on top of a superlattice of nanopillars are investigated. We use molecular dynamics (MD) simulations to access the deformation fields and the tight-binding approaches to calculate the electronic properties. The system of interest consists of a triangular lattice of nanopillars with a period of a=750 nm over which the graphene l…
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The mechanical and electronic properties of a graphene membrane placed on top of a superlattice of nanopillars are investigated. We use molecular dynamics (MD) simulations to access the deformation fields and the tight-binding approaches to calculate the electronic properties. The system of interest consists of a triangular lattice of nanopillars with a period of a=750 nm over which the graphene layer is deposited. Ripples form in the graphene layer that span across the unit cell, connecting neighbouring pillars, in agreement with recent experiments. We find that the resulting pseudo-magnetic field (PMF) varies strongly across the unit cell. We investigate the dependence of PMF on unit cell boundary conditions, height of the pillars, and the strength of the van der Waals interaction between graphene and the substrate. We find direct correspondence with typical experiments on pillars, showing intrinsic "slack" in the graphene membrane. PMF values are confirmed by the local density of states calculations performed at different positions of the unit cell showing pseudo-Landau levels at varying spacings. Our findings regarding the relaxed membrane configuration and the induced strains are transferable to other flexible 2D membranes.
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Submitted 26 November, 2018;
originally announced November 2018.
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Strained graphene structures: from valleytronics to pressure sensing
Authors:
Slavisa P. Milovanovic,
Francois M. Peeters
Abstract:
Due to its strong bonds graphene can stretch up to 25% of its original size without breaking. Furthermore, mechanical deformations lead to the generation of pseudo-magnetic fields (PMF) that can exceed 300 T. The generated PMF has opposite direction for electrons originating from different valleys. We show that valley-polarized currents can be generated by local straining of multi-terminal graphen…
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Due to its strong bonds graphene can stretch up to 25% of its original size without breaking. Furthermore, mechanical deformations lead to the generation of pseudo-magnetic fields (PMF) that can exceed 300 T. The generated PMF has opposite direction for electrons originating from different valleys. We show that valley-polarized currents can be generated by local straining of multi-terminal graphene devices. The pseudo-magnetic field created by a Gaussian-like deformation allows electrons from only one valley to transmit and a current of electrons from a single valley is generated at the opposite side of the locally strained region. Furthermore, applying a pressure difference between the two sides of a graphene membrane causes it to bend/bulge resulting in a resistance change. We find that the resistance changes linearly with pressure for bubbles of small radius while the response becomes non-linear for bubbles that stretch almost to the edges of the sample. This is explained as due to the strong interference of propagating electronic modes inside the bubble. Our calculations show that high gauge factors can be obtained in this way which makes graphene a good candidate for pressure sensing.
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Submitted 21 November, 2017;
originally announced November 2017.
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Graphene membrane as a pressure gauge
Authors:
S. P. Milovanovic,
M. Z. Tadic,
F. M. Peeters
Abstract:
Straining graphene results in the appearance of a pseudo-magnetic field which alters its local electronic properties. Applying a pressure difference between the two sides of the membrane causes it to bend/bulge resulting in a resistance change. We find that the resistance changes linearly with pressure for bubbles of small radius while the response becomes non-linear for bubbles that stretch almos…
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Straining graphene results in the appearance of a pseudo-magnetic field which alters its local electronic properties. Applying a pressure difference between the two sides of the membrane causes it to bend/bulge resulting in a resistance change. We find that the resistance changes linearly with pressure for bubbles of small radius while the response becomes non-linear for bubbles that stretch almost to the edges of the sample. This is explained as due to the strong interference of propagating electronic modes inside the bubble. Our calculations show that high gauge factors can be obtained in this way which makes graphene a good candidate for pressure sensing.
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Submitted 2 August, 2017;
originally announced August 2017.
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Scanning gate microscopy of magnetic focusing in graphene devices: quantum vs. classical simulation
Authors:
M. D. Petrović,
S. P. Milovanović,
F. M. Peeters
Abstract:
We compare classical versus quantum electron transport in recently investigated magnetic focusing devices [S. Bhandari et al., Nano Lett. 16, 1690 (2016)] exposed to the perturbing potential of a scanning gate microscope (SGM). Using the Landauer-Büttiker formalism for a multi-terminal device, we calculate resistance maps that are obtained as the SGM tip is scanned over the sample. There are three…
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We compare classical versus quantum electron transport in recently investigated magnetic focusing devices [S. Bhandari et al., Nano Lett. 16, 1690 (2016)] exposed to the perturbing potential of a scanning gate microscope (SGM). Using the Landauer-Büttiker formalism for a multi-terminal device, we calculate resistance maps that are obtained as the SGM tip is scanned over the sample. There are three unique regimes in which the scanning tip can operate (focusing, repelling, and mixed regime) which are investigated. Tip interacts mostly with electrons with cyclotron trajectories passing directly underneath it, leaving a trail of modified current density behind it. Other (indirect) trajectories become relevant when the tip is placed near the edges of the sample, and current is scattered between the tip and the edge. We also discuss possible explanations for spatial asymmetry of experimentally measured resistance maps, and connect it with specific configurations of the measuring probes.
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Submitted 22 January, 2017;
originally announced January 2017.
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Strained graphene Hall bar
Authors:
S. P. Milovanovic,
F. M. Peeters
Abstract:
The effects of strain, induced by a Gaussian bump, on the magnetic field dependent transport properties of a graphene Hall bar are investigated. The numerical simulations are performed using both classical and quantum mechanical transport theory and we found that both approaches exhibit similar characteristic features. The effects of the Gaussian bump are manifested by a decrease of the bend resis…
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The effects of strain, induced by a Gaussian bump, on the magnetic field dependent transport properties of a graphene Hall bar are investigated. The numerical simulations are performed using both classical and quantum mechanical transport theory and we found that both approaches exhibit similar characteristic features. The effects of the Gaussian bump are manifested by a decrease of the bend resistance, $R_B$, around zero-magnetic field and the occurrence of side-peaks in $R_B$. These features are explained as a consequence of bump-assisted scattering of electrons towards different terminals of the Hall bar. Using these features we are able to give an estimate of the size of the bump. Additional oscillations in $R_B$ are found in the quantum description that are due to the population/depopulation of Landau levels. The bump has a minor influence on the Hall resistance even for very high values of the pseudo-magnetic field. When the bump is placed outside the center of the Hall bar valley polarized electrons can be collected in the leads.
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Submitted 23 December, 2016;
originally announced December 2016.
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Strain controlled valley filtering in multi-terminal graphene structures
Authors:
S. P. Milovanovic,
F. M. Peeters
Abstract:
Valley-polarized currents can be generated by local straining of multi-terminal graphene devices. The pseudo-magnetic field created by the deformation allows electrons from only one valley to transmit and a current of electrons from a single valley is generated at the opposite side of the locally strained region. We show that valley filtering is most effective with bumps of a certain height and wi…
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Valley-polarized currents can be generated by local straining of multi-terminal graphene devices. The pseudo-magnetic field created by the deformation allows electrons from only one valley to transmit and a current of electrons from a single valley is generated at the opposite side of the locally strained region. We show that valley filtering is most effective with bumps of a certain height and width. Despite the fact that the highest contribution to the polarized current comes from electrons from the lowest sub-band, contributions of other sub-bands are not negligible and can significantly enhance the output current.
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Submitted 31 October, 2016;
originally announced October 2016.
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Characterization of the size and position of electron-hole puddles at a graphene p-n junction
Authors:
Slavisa P. Milovanovic,
Francois M. Peeters
Abstract:
The effect of an electron-hole puddle on the electrical transport when governed by snake states in a bipolar graphene structure is investigated. Using numerical simulations we show that information on the size and position of the electron-hole puddle can be obtained using the dependence of the conductance on magnetic field and electron density of the gated region. The presence of the scatterer dis…
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The effect of an electron-hole puddle on the electrical transport when governed by snake states in a bipolar graphene structure is investigated. Using numerical simulations we show that information on the size and position of the electron-hole puddle can be obtained using the dependence of the conductance on magnetic field and electron density of the gated region. The presence of the scatterer disrupts snake state transport which alters the conduction pattern. We obtain a simple analytical formula that connects the position of the electron-hole puddle with features observed in the conductance. Size of the electron-hole puddle is estimated from the magnetic field and gate potential that maximizes the effect of the puddle on the electrical transport.
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Submitted 24 March, 2016;
originally announced March 2016.
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Veselago lensing in graphene with a p-n junction: classical versus quantum effects
Authors:
S. P. Milovanovic,
D. Moldovan,
F. M. Peeters
Abstract:
The feasibility of Veselago lensing in graphene with a p-n junction is investigated numerically for realistic injection leads. Two different set-ups with two narrow leads are considered with absorbing or reflecting side edges. This allows us to separately determine the influence of scattering on electron focusing for the edges and the p-n interface. Both semiclassical and tight-binding simulations…
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The feasibility of Veselago lensing in graphene with a p-n junction is investigated numerically for realistic injection leads. Two different set-ups with two narrow leads are considered with absorbing or reflecting side edges. This allows us to separately determine the influence of scattering on electron focusing for the edges and the p-n interface. Both semiclassical and tight-binding simulations show a distinctive peak in the transmission probability that is attributed to the Veselago lensing effect. We investigate the robustness of this peak on the width of the injector, the position of the p-n interface and different gate potential profiles. Furthermore, the influence of scattering by both short- and long-range impurities is considered.
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Submitted 8 September, 2015;
originally announced September 2015.
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Interplay between snake and quantum edge states in a graphene Hall bar with a pn-junction
Authors:
S. P. Milovanovic,
M. Ramezani Masir,
F. M. Peeters
Abstract:
The magneto- and Hall resistance of a locally gated cross shaped graphene Hall bar is calculated. The edge of the top gate is placed diagonally across the center of the Hall cross. Four-probe resistance is calculated using the Landauer-Büttiker formalism, while the transmission coefficients are obtained using the non-equilibrium Green's function approach. The interplay between transport due to edg…
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The magneto- and Hall resistance of a locally gated cross shaped graphene Hall bar is calculated. The edge of the top gate is placed diagonally across the center of the Hall cross. Four-probe resistance is calculated using the Landauer-Büttiker formalism, while the transmission coefficients are obtained using the non-equilibrium Green's function approach. The interplay between transport due to edge channels and snake states is investigated. When two edge channels are occupied we predict oscillations in the Hall and the bend resistance as function of the magnetic field which are a consequence of quantum interference between the occupied snake states.
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Submitted 9 September, 2014; v1 submitted 29 July, 2014;
originally announced July 2014.
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Spectroscopy of snake states using a graphene Hall bar
Authors:
S. P. Milovanovic,
M. Ramezani Masir,
F. M. Peeters
Abstract:
An approach to observe snake states in a graphene Hall bar containing a pn-junction is proposed. The magnetic field dependence of the bend resistance in a ballistic graphene Hall bar structure containing a tilted pn-junction oscillates as a function of applied magnetic field. We show that each oscillation is due to a specific snake state that moves along the pn-interface. Furthermore depending on…
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An approach to observe snake states in a graphene Hall bar containing a pn-junction is proposed. The magnetic field dependence of the bend resistance in a ballistic graphene Hall bar structure containing a tilted pn-junction oscillates as a function of applied magnetic field. We show that each oscillation is due to a specific snake state that moves along the pn-interface. Furthermore depending on the value of the magnetic field and applied potential we can control the lead in which the electrons will end up and hence control the response of the system.
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Submitted 4 December, 2013;
originally announced December 2013.
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Bilayer graphene Hall bar with a pn-junction
Authors:
S. P. Milovanovic,
M. Ramezani Masir,
F. M. Peeters
Abstract:
We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: $i$) both sides of the junction hav…
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We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: $i$) both sides of the junction have the same carrier type, and $ii$) one side of the junction is n-type while the other one is p-type. The first case shows Hall plateau-like features in the Hall resistance that fade away as the band gap opens. The second case exhibits a bend resistance that is asymmetric in magnetic field as a consequence of snake states along the pn-interface, where the maximum is shifted away from zero magnetic field.
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Submitted 4 December, 2013;
originally announced December 2013.
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Graphene Hall bar with an asymmetric pn-junction
Authors:
S. P. Milovanovic,
M. Ramezani Masir,
F. M. Peeters
Abstract:
We investigated the magnetic field dependence of the Hall and the bend resistances in the ballistic regime for a single layer graphene Hall bar structure containing a pn-junction. When both regions are n-type the Hall resistance dominates and Hall type of plateaus are formed. These plateaus occur as a consequence of the restriction on the angle imposed by Snell's law allowing only electrons with a…
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We investigated the magnetic field dependence of the Hall and the bend resistances in the ballistic regime for a single layer graphene Hall bar structure containing a pn-junction. When both regions are n-type the Hall resistance dominates and Hall type of plateaus are formed. These plateaus occur as a consequence of the restriction on the angle imposed by Snell's law allowing only electrons with a certain initial angles to transmit though the potential step. The size of the plateau and its position is determined by the position of the potential interface as well as the value of the applied potential. When the second region is p-type the bend resistance dominates which is asymmetric in field due to the presence of snake states. Changing the position of the pn-interface in the Hall bar strongly affects these states and therefore the bend resistance is also changed. Changing the applied potential we observe that the bend resistance exhibits a peak around the charge-neutrality point (CNP) which is independent of the position of the pn-interface, while the Hall resistance shows a sign reversal when the CNP is crossed, which is in very good agreement with a recent experiment [J. R. Williams et al., Phys. Rev. Lett. 107, 046602(2011)].
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Submitted 4 December, 2013;
originally announced December 2013.
