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Impact of a $MoS_2$ monolayer on the nanoscale thermoelastic response of silicon heterostructures
Authors:
Davide Soranzio,
Denny Puntel,
Manuel Tuniz,
Paulina E. Majchrzak,
Alessandra Milloch,
Nicholas M. Olsen,
Wibke Bronsch,
Bjarke S. Jessen,
Danny Fainozzi,
Jacopo S. Pelli Cresi,
Dario De Angelis,
Laura Foglia,
Riccardo Mincigrucci,
Xiaoyang Zhu,
Cory R. Dean,
Søren Ulstrup,
Francesco Banfi,
Claudio Giannetti,
Fulvio Parmigiani,
Filippo Bencivenga,
Federico Cilento
Abstract:
Understanding the thermoelastic response of a nanostructure is crucial for the choice of materials and interfaces in electronic devices with improved and tailored transport properties, at the length scales of the present technology. Here we show how the deposition of a $MoS_2$ monolayer can strongly modify the nanoscale thermoelastic dynamics of silicon substrates close to their interface. We achi…
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Understanding the thermoelastic response of a nanostructure is crucial for the choice of materials and interfaces in electronic devices with improved and tailored transport properties, at the length scales of the present technology. Here we show how the deposition of a $MoS_2$ monolayer can strongly modify the nanoscale thermoelastic dynamics of silicon substrates close to their interface. We achieve this result by creating a transient grating with extreme ultraviolet light, using ultrashort free-electron laser pulses, whose $\approx$84 nm period is comparable to the size of elements typically used in nanodevices, such as electric contacts and nanowires. The thermoelastic response, featured by coherent acoustic waves and an incoherent relaxation, is tangibly modified by the presence of monolayer $MoS_2$. Namely, we observed a major reduction of the amplitude of the surface mode, which is almost suppressed, while the longitudinal mode is basically unperturbed, aside from a faster decay of the acoustic modulations. We interpret this behavior as a selective modification of the surface elasticity and we discuss the conditions to observe such effect, which might be of immediate relevance for the design of Si-based nanoscale devices.
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Submitted 29 March, 2024; v1 submitted 28 March, 2024;
originally announced March 2024.
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Mott resistive switching initiated by topological defects
Authors:
Alessandra Milloch,
Ignacio Figueruelo-Campanero,
Wei-Fan Hsu,
Selene Mor,
Simon Mellaerts,
Francesco Maccherozzi,
Larissa Ishibe Veiga,
Sarnjeet S. Dhesi,
Mauro Spera,
** Won Seo,
Jean-Pierre Locquet,
Michele Fabrizio,
Mariela Menghini,
Claudio Giannetti
Abstract:
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation, the nature of the local stochastic fluctuations that drive the formation of me…
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Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation, the nature of the local stochastic fluctuations that drive the formation of metallic nuclei out of the insulating state has remained hidden. Here, using operando X-ray nano-imaging, we have captured the early-stages of resistive switching in a V2O3-based device under working conditions. V2O3 is a paradigmatic Mott material, which undergoes a first-order metal-to-insulator transition coupled to a lattice transformation that breaks the threefold rotational symmetry of the rhombohedral metal phase. We reveal a new class of volatile electronic switching triggered by nanoscale topological defects of the lattice order parameter of the insulating phase. Our results pave the way to the use of strain engineering approaches to manipulate topological defects and achieve the full control of the electronic Mott switching. The concept of topology-driven reversible electronic transition is of interest for a broad class of quantum materials, comprising transition metal oxides, chalcogenides and kagome metals, that exhibit first-order electronic transitions coupled to a symmetry-breaking order.
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Submitted 1 February, 2024;
originally announced February 2024.
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The fate of optical excitons in FAPbI3 nanocube superlattices
Authors:
Alessandra Milloch,
Umberto Filippi,
Paolo Franceschini,
Selene Mor,
Stefania Pagliara,
Gabriele Ferrini,
Franco V. A. Camargo,
Giulio Cerullo,
Dmitry Baranov,
Liberato Manna,
Claudio Giannetti
Abstract:
Understanding the nature of the photoexcitation and ultrafast charge dynamics pathways in organic halide perovskite superlattices is key for their potential applications as tunable light emitters, photon harvesting materials and light-amplification systems. In this work we apply two-dimensional coherent electronic spectroscopy (2DES) to track in real time the formation of near-infrared optical exc…
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Understanding the nature of the photoexcitation and ultrafast charge dynamics pathways in organic halide perovskite superlattices is key for their potential applications as tunable light emitters, photon harvesting materials and light-amplification systems. In this work we apply two-dimensional coherent electronic spectroscopy (2DES) to track in real time the formation of near-infrared optical excitons and their ultrafast decay into bi-excitons in CH(NH2)2PbI3 nanocube superlattices. On the picosecond timescale, the strong coupling between localized charges and specific lattice distortions leads to the progressive formation of long-lived localized trap states. The analysis of the temperature dependence of the excitonic intrinsic linewidth, as extracted by the anti-diagonal components of the 2D spectra, unveils a dramatic change of the excitonic coherence time across the cubic to tetragonal structural transition. Our results offer a new way to control and enhance the ultrafast coherent dynamics of photocarrier generation in hybrid halide perovskite synthetic solids.
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Submitted 30 January, 2024;
originally announced January 2024.
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Halide perovskite artificial solids as a new platform to simulate collective phenomena in doped Mott insulators
Authors:
Alessandra Milloch,
Umberto Filippi,
Paolo Franceschini,
Michele Galvani,
Selene Mor,
Stefania Pagliara,
Gabriele Ferrini,
Francesco Banfi,
Massimo Capone,
Dmitry Baranov,
Liberato Manna,
Claudio Giannetti
Abstract:
The development of Quantum Simulators, artificial platforms where the predictions of many-body theories of correlated quantum materials can be tested in a controllable and tunable way, is one of the main challenges of condensed matter physics. Here we introduce artificial lattices made of lead halide perovskite nanocubes as a new platform to simulate and investigate the physics of correlated quant…
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The development of Quantum Simulators, artificial platforms where the predictions of many-body theories of correlated quantum materials can be tested in a controllable and tunable way, is one of the main challenges of condensed matter physics. Here we introduce artificial lattices made of lead halide perovskite nanocubes as a new platform to simulate and investigate the physics of correlated quantum materials. The ultrafast optical injection of quantum confined excitons plays the role of do** in real materials. We show that, at large photo-do**, the exciton gas undergoes an excitonic Mott transition, which fully realizes the magnetic-field-driven insulator-to-metal transition described by the Hubbard model. At lower photo-do**, the long-range interactions drive the formation of a collective superradiant state, in which the phases of the excitons generated in each single perovskite nanocube are coherently locked. Our results demonstrate that time-resolved experiments span a parameter region of the Hubbard model in which long-range and phase-coherent orders emerge out of a doped Mott insulating phase. This physics is relevant for a broad class of phenomena, such as superconductivity and charge-density waves in correlated materials whose properties are captured by doped Hubbard models.
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Submitted 15 March, 2023;
originally announced March 2023.
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Extreme ultraviolet transient gratings: A tool for nanoscale photoacoustics
Authors:
L. Foglia,
R. Mincigrucci,
A. A. Maznev,
G. Baldi,
F. Capotondi,
F. Caporaletti,
R. Comin,
D. De Angelis,
R. A. Duncan,
D. Fainozzi,
G. Kurdi,
J. Li,
A. Martinelli,
C. Masciovecchio,
G. Monaco,
A. Milloch,
K. A. Nelson,
C. A. Occhialini,
M. Pancaldi,
E. Pedersoli,
J. S. Pelli-Cresi,
A. Simoncig,
F. Travasso,
B. Wehinger,
M. Zanatta
, et al. (1 additional authors not shown)
Abstract:
Collective lattice dynamics determine essential aspects of condensed matter, such as elastic and thermal properties. These exhibit strong dependence on the length-scale, reflecting the marked wavevector dependence of lattice excitations. The extreme ultraviolet transient grating (EUV TG) approach has demonstrated the potential of accessing a wavevector range corresponding to the 10s of nm length-s…
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Collective lattice dynamics determine essential aspects of condensed matter, such as elastic and thermal properties. These exhibit strong dependence on the length-scale, reflecting the marked wavevector dependence of lattice excitations. The extreme ultraviolet transient grating (EUV TG) approach has demonstrated the potential of accessing a wavevector range corresponding to the 10s of nm length-scale, representing a spatial scale of the highest relevance for fundamental physics and forefront technology, previously inaccessible by optical TG and other inelastic scattering methods. In this manuscript we report on the capabilities of this technique in the context of probing thermoelastic properties of matter, both in the bulk and at the surface, as well as discussing future developments and practical considerations.
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Submitted 2 December, 2022;
originally announced December 2022.
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Coherent control of the orbital occupation driving the insulator-to-metal Mott transition in V$_2$O$_3$
Authors:
Paolo Franceschini,
Veronica R. Policht,
Alessandra Milloch,
Andrea Ronchi,
Selene Mor,
Simon Mellaerts,
Wei-Fan Hsu,
Stefania Pagliara,
Gabriele Ferrini,
Francesco Banfi,
Michele Fabrizio,
Mariela Menghini,
Jean-Pierre Locquet,
Stefano Dal Conte,
Giulio Cerullo,
Claudio Giannetti
Abstract:
Managing light-matter interactions on timescales faster than the loss of electronic coherence is key for achieving full quantum control of the final products in solid-solid transformations. In this work, we demonstrate coherent electronic control of the photoinduced insulator-to-metal transition in the prototypical Mott insulator V$_2$O$_3$. Selective excitation of a specific interband transition…
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Managing light-matter interactions on timescales faster than the loss of electronic coherence is key for achieving full quantum control of the final products in solid-solid transformations. In this work, we demonstrate coherent electronic control of the photoinduced insulator-to-metal transition in the prototypical Mott insulator V$_2$O$_3$. Selective excitation of a specific interband transition with two phase-locked light pulses manipulates the orbital occupation of the correlated bands in a way that depends on the coherent evolution of the photoinduced superposition of states. A comparison between experimental results and numerical solutions of the optical Bloch equations provides an electronic coherence time on the order of 5 fs. Temperature-dependent experiments suggest that the electronic coherence time is enhanced in the vicinity of the insulator-to-metal transition critical temperature, thus highlighting the role of fluctuations in determining the electronic coherence. These results open new routes to selectively switch the functionalities of quantum materials and coherently control solid-solid electronic transformations.
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Submitted 12 May, 2023; v1 submitted 3 November, 2022;
originally announced November 2022.
