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Pushing the Limits of Broadband and High Frequency Metamaterial Silicon Antireflection Coatings
Authors:
K. P. Coughlin,
J. J. McMahon,
K. T. Crowley,
B. J. Koopman,
K. H. Miller,
S. M. Simon,
E. J. Wollack
Abstract:
Broadband refractive optics realized from high index materials provide compelling design solutions for the next generation of observatories for the Cosmic Microwave Background (CMB), and for sub-millimeter astronomy. In this paper, work is presented which extends the state of the art in silicon lenses with metamaterial antireflection (AR) coatings towards larger bandwidth and higher frequency oper…
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Broadband refractive optics realized from high index materials provide compelling design solutions for the next generation of observatories for the Cosmic Microwave Background (CMB), and for sub-millimeter astronomy. In this paper, work is presented which extends the state of the art in silicon lenses with metamaterial antireflection (AR) coatings towards larger bandwidth and higher frequency operation. Examples presented include octave bandwidth coatings with less than $0.5\%$ reflection, a prototype 4:1 bandwidth coating, and a coating optimized for 1.4 THz. For these coatings the detailed design, fabrication and testing processes are described as well as the inherent performance trade offs.
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Submitted 23 April, 2018;
originally announced April 2018.
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Composite Reflective/Absorptive IR-Blocking Filters Embedded in Metamaterial Antireflection Coated Silicon
Authors:
C. D. Munson,
S. K. Choi,
K. P. Coughlin,
J. J. McMahon,
K. H. Miller,
L. A. Page,
E. J. Wollack
Abstract:
Infrared (IR) blocking filters are crucial for controlling the radiative loading on cryogenic systems and for optimizing the sensitivity of bolometric detectors in the far-IR. We present a new IR filter approach based on a combination of patterned frequency selective structures on silicon and a thin (50 $μ\textrm{m}$ thick) absorptive composite based on powdered reststrahlen absorbing materials. F…
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Infrared (IR) blocking filters are crucial for controlling the radiative loading on cryogenic systems and for optimizing the sensitivity of bolometric detectors in the far-IR. We present a new IR filter approach based on a combination of patterned frequency selective structures on silicon and a thin (50 $μ\textrm{m}$ thick) absorptive composite based on powdered reststrahlen absorbing materials. For a 300 K blackbody, this combination reflects $\sim$50\% of the incoming light and blocks \textgreater 99.8\% of the total power with negligible thermal gradients and excellent low frequency transmission. This allows for a reduction in the IR thermal loading to negligible levels in a single cold filter. These composite filters are fabricated on silicon substrates which provide excellent thermal transport laterally through the filter and ensure that the entire area of the absorptive filter stays near the bath temperature. A metamaterial antireflection coating cut into these substrates reduces in-band reflections to below 1\%, and the in-band absorption of the powder mix is below 1\% for signal bands below 750 GHz. This type of filter can be directly incorporated into silicon refractive optical elements.
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Submitted 27 February, 2017;
originally announced February 2017.
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Deep Reactive Ion Etched Anti-Reflection Coatings for Sub-millimeter Silicon Optics
Authors:
Patricio A. Gallardo,
Brian J. Koopman,
Nicholas Cothard,
Sarah Marie M. Bruno,
German Cortes-Medellin,
Galen Marchetti,
Kevin H. Miller,
Brenna Mockler,
Michael D. Niemack,
Gordon Stacey,
Edward J. Wollack
Abstract:
Refractive optical elements are widely used in millimeter and sub-millimeter astronomical telescopes. High resistivity silicon is an excellent material for dielectric lenses given its low loss-tangent, high thermal conductivity and high index of refraction. The high index of refraction of silicon causes a large Fresnel reflectance at the vacuum-silicon interface (up to 30%), which can be reduced w…
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Refractive optical elements are widely used in millimeter and sub-millimeter astronomical telescopes. High resistivity silicon is an excellent material for dielectric lenses given its low loss-tangent, high thermal conductivity and high index of refraction. The high index of refraction of silicon causes a large Fresnel reflectance at the vacuum-silicon interface (up to 30%), which can be reduced with an anti-reflection (AR) coating. In this work we report techniques for efficiently AR coating silicon at sub-millimeter wavelengths using Deep Reactive Ion Etching (DRIE) and bonding the coated silicon to another silicon optic. Silicon wafers of 100 mm diameter (1 mm thick) were coated and bonded using the Silicon Direct Bonding technique at high temperature (1100 C). No glue is used in this process. Optical tests using a Fourier Transform Spectrometer (FTS) show sub-percent reflections for a single-layer DRIE AR coating designed for use at 320 microns on a single wafer. Cryogenic (10 K) measurements of a bonded pair of AR-coated wafers also reached sub-percent reflections. A prototype two-layer DRIE AR coating to reduce reflections and increase bandwidth is presented and plans for extending this approach are discussed.
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Submitted 24 October, 2016;
originally announced October 2016.
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A Broadband Micro-machined Far-Infrared Absorber
Authors:
Edward J. Wollack,
Aaron M. Datesman,
Christine A. Jhabvala,
Kevin H. Miller,
Manuel A. Quijada
Abstract:
The experimental investigation of a broadband far-infrared meta-material absorber is described. The observed absorptance is $>\,0.95$ from ${\rm 1-20\,THz}$ (${\rm 300-15\,μm}$) over a temperature range spanning ${\rm 5-300\,K}$. The meta-material, realized from an array of tapers ${\rm \approx 100\,μm}$ in length, is largely insensitive to the detailed geometry of these elements and is cryogenica…
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The experimental investigation of a broadband far-infrared meta-material absorber is described. The observed absorptance is $>\,0.95$ from ${\rm 1-20\,THz}$ (${\rm 300-15\,μm}$) over a temperature range spanning ${\rm 5-300\,K}$. The meta-material, realized from an array of tapers ${\rm \approx 100\,μm}$ in length, is largely insensitive to the detailed geometry of these elements and is cryogenically compatible with silicon-based micro-machined technologies. The electromagnetic response is in general agreement with a physically motivated transmission line model.
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Submitted 2 May, 2016; v1 submitted 13 April, 2016;
originally announced April 2016.
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Infrared dielectric properties of low-stress silicon oxide
Authors:
Giuseppe Cataldo,
Edward J. Wollack,
Ari D. Brown,
Kevin H. Miller
Abstract:
Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric fu…
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Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.
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Submitted 15 March, 2016;
originally announced March 2016.
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Bulk Fermi surface and electronic properties of Cu$_{0.07}$Bi$_{2}$Se$_{3}$
Authors:
C. Martin,
V. Craciun,
K. H. Miller,
B. Uzakbaiuly,
S. Buvaev,
H. Berger,
A. F. Hebard,
D. B. Tanner
Abstract:
The electronic properties of Cu$_{0.07}$Bi$_{2}$Se$_{3}$ have been investigated using Shubnikov-de Haas and optical reflectance measurements. Quantum oscillations reveal a bulk, three-dimensional Fermi surface with anisotropy $k^{c}_{F}/k^{ab}_{F}\approx$ 2 and a modest increase in free-carrier concentration and in scattering rate with respect to the undoped Bi$_{2}$Se$_{3}$, also confirmed by ref…
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The electronic properties of Cu$_{0.07}$Bi$_{2}$Se$_{3}$ have been investigated using Shubnikov-de Haas and optical reflectance measurements. Quantum oscillations reveal a bulk, three-dimensional Fermi surface with anisotropy $k^{c}_{F}/k^{ab}_{F}\approx$ 2 and a modest increase in free-carrier concentration and in scattering rate with respect to the undoped Bi$_{2}$Se$_{3}$, also confirmed by reflectivity data. The effective mass is almost identical to that of Bi$_{2}$Se$_{3}$. Optical conductivity reveals a strong enhancement of the bound impurity bands with Cu addition, suggesting that a significant number of Cu atoms enter the interstitial sites between Bi and Se layers or may even substitute for Bi. This conclusion is also supported by X-ray diffraction measurements, where a significant increase of microstrain was found in Cu$_{0.07}$Bi$_{2}$Se$_{3}$, compared to Bi$_{2}$Se$_{3}$.
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Submitted 7 May, 2013;
originally announced May 2013.
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Investigation of infrared phonon modes in multiferroic single-crystal FeTe$_{2}$O$_{5}$Br
Authors:
K. H. Miller,
X. S. Xu,
H. Berger,
V. Craciun,
X. Xi,
C. Martin,
G. L. Carr,
D. B. Tanner
Abstract:
Reflection and transmission as a function of temperature (5--300 K) have been measured on single crystals of the multiferroic compound FeTe$_{2}$O$_{5}$Br utilizing light spanning the far infrared to the visible portions of the electromagnetic spectrum. The complex dielectric function and optical properties were obtained via Kramers-Kronig analysis and by fits to a Drude-Lortentz model. Analysis o…
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Reflection and transmission as a function of temperature (5--300 K) have been measured on single crystals of the multiferroic compound FeTe$_{2}$O$_{5}$Br utilizing light spanning the far infrared to the visible portions of the electromagnetic spectrum. The complex dielectric function and optical properties were obtained via Kramers-Kronig analysis and by fits to a Drude-Lortentz model. Analysis of the anisotropic excitation spectra via Drude-Lorentz fitting and lattice dynamical calculations have lead to the observation of all 52 IR-active modes predicted in the $ac$ plane and 43 or the 53 modes predicted along the b axis of the monoclinic cell. Assignments to groups (clusters) of phonons have been made and trends within them are discussed in light of our calculated displacement patterns.
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Submitted 24 January, 2013;
originally announced January 2013.
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Temperature dependent infrared spectroscopy of the Rashba spin-splitting semiconductor BiTeI
Authors:
C. Martin,
K. H. Miller,
S. Buvaev,
H. Berger,
X. S. Xu,
A. F. Hebard,
D. B. Tanner
Abstract:
We performed temperature dependent infrared spectroscopy measurements on BiTeI single crystals, which exhibit large Rashba spin-splitting. Similar to a previous optical study, we found electronic excitations in good agreement with spin-split electronic bands. In addition, we report a low energy intraband transition with an onset energy of about 40 meV and an unexpectedly large number of vibrationa…
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We performed temperature dependent infrared spectroscopy measurements on BiTeI single crystals, which exhibit large Rashba spin-splitting. Similar to a previous optical study, we found electronic excitations in good agreement with spin-split electronic bands. In addition, we report a low energy intraband transition with an onset energy of about 40 meV and an unexpectedly large number of vibrational modes in the far-infrared spectral region. At least some of the modes have asymmetric Fano line-shape. These new observations cannot be explained considering only the bulk band structure or crystal symmetry of BiTeI, and we proposed that the optical response is also affected by the surface topology.
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Submitted 7 September, 2012;
originally announced September 2012.
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Infrared phonon anomaly and magnetic excitations in single-crystal Cu$_{3}$Bi(SeO$_{3}$)$_{2}$O$_{2}$Cl
Authors:
K. H. Miller,
P. W. Stephens,
C. Martin,
E. Constable,
R. A. Lewis,
H. Berger,
G. L. Carr,
D. B. Tanner
Abstract:
Infrared reflection and transmission as a function of temperature have been measured on single crystals of Cu$_{3}$Bi(SeO$_{3}$)$_{2}$O$_{2}$Cl. The complex dielectric function and optical properties along all three principal axes of the orthorhombic cell were obtained via Kramers-Kronig analysis and by fits to a Drude-Lorentz model. Below 115 K, 16 additional modes (8(E$\parallel\hat{a}$)+6(E…
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Infrared reflection and transmission as a function of temperature have been measured on single crystals of Cu$_{3}$Bi(SeO$_{3}$)$_{2}$O$_{2}$Cl. The complex dielectric function and optical properties along all three principal axes of the orthorhombic cell were obtained via Kramers-Kronig analysis and by fits to a Drude-Lorentz model. Below 115 K, 16 additional modes (8(E$\parallel\hat{a}$)+6(E$\parallel\hat{b}$)+2(E$\parallel\hat{c}$)) appear in the phonon spectra; however, powder x-ray diffraction measurements do not detect a new structure at 85 K. Potential explanations for the new phonon modes are discussed. Transmission in the far infrared as a function of temperature has revealed magnetic excitations originating below the magnetic ordering temperature ($T_{c}\sim$24 K). The origin of the excitations in the magnetically ordered state will be discussed in terms of their response to different polarizations of incident light, behavior in externally-applied magnetic fields, and the anisotropic magnetic properties of Cu$_{3}$Bi(SeO$_{3}$)$_{2}$O$_{2}$Cl as determined by d.c. susceptibility measurements.
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Submitted 4 October, 2012; v1 submitted 7 June, 2012;
originally announced June 2012.
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Magnetodielectric coupling of infrared phonons in single crystal Cu$_{2}$OSeO$_{3}$
Authors:
K. H. Miller,
X. S. Xu,
H. Berger,
E. S. Knowles,
D. J. Arenas,
M. W. Meisel,
D. B. Tanner
Abstract:
Reflection and transmission as a function of temperature have been measured on a single crystal of the magnetoelectric ferrimagnetic compound Cu$_{2}$OSeO$_{3}$ utilizing light spanning the far infrared to the visible portions of the electromagnetic spectrum. The complex dielectric function and optical properties were obtained via Kramers-Kronig analysis and by fits to a Drude-Lortentz model. The…
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Reflection and transmission as a function of temperature have been measured on a single crystal of the magnetoelectric ferrimagnetic compound Cu$_{2}$OSeO$_{3}$ utilizing light spanning the far infrared to the visible portions of the electromagnetic spectrum. The complex dielectric function and optical properties were obtained via Kramers-Kronig analysis and by fits to a Drude-Lortentz model. The fits of the infrared phonons show a magnetodielectric effect near the transition temperature ($T_{c}\sim 60$~K). Assignments to strong far infrared phonon modes have been made, especially those exhibiting anomalous behavior around the transition temperature.
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Submitted 23 June, 2010;
originally announced June 2010.
