Strain analysis of Ge micro disk using precession electron diffraction
Authors:
Aneeqa Bashir,
Ross. W. Millar,
Kevin Gallacher,
Douglas. J. Paul,
Amith. D. Darbal,
Robert Stroud,
Andrea Ballabio,
Jacopo Frigerio,
Giovanni Isella,
Ian MacLaren
Abstract:
The recently developed precession electron diffraction (PED) technique in scanning transmission electron microscopy (STEM) has been used to elucidate the local strain distribution and crystalline misorientation in CMOS fabricated strained Ge micro disk structure grown on Si substrate. Such structures are considered to be a compact optical source for the future photonics due to the specific undercu…
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The recently developed precession electron diffraction (PED) technique in scanning transmission electron microscopy (STEM) has been used to elucidate the local strain distribution and crystalline misorientation in CMOS fabricated strained Ge micro disk structure grown on Si substrate. Such structures are considered to be a compact optical source for the future photonics due to the specific undercut for direct bandgap behaviour under strain. In this study, the strain maps are interpreted and compared with a finite element model (FEM) of the strain in the investigated structure. Results demonstrate that the SiN used as a stressor on top of the Ge disk induces an in-plane strain $ε_{xx}$ of a maximum value of almost 2 % which is also confirmed by FEM simulations. This tensile strain can reduce the difference between the direct and indirect bandgaps leading to direct bandgap radiative transitions, with the potential for applications in strained Ge lasers.
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Submitted 6 June, 2019;
originally announced June 2019.
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates
Authors:
F. Pezzoli,
A. Giorgioni,
K. Gallacher,
F. Isa,
P. Biagioni,
R. W. Millar,
E. Gatti,
E. Grilli,
E. Bonera,
G. Isella,
D. J. Paul,
Leo Miglio
Abstract:
We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the…
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We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trap** of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO2 in passivating the surface of Ge and thus in enhancing the room temperature PL emission.
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Submitted 29 March, 2016;
originally announced March 2016.
