GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Authors:
Yannick De Koninck,
Charles Caer,
Didit Yudistira,
Marina Baryshnikova,
Huseyin Sar,
**-Yi Hsieh,
Saroj Kanta Patra,
Nadezda Kuznetsova,
Davide Colucci,
Alexey Milenin,
Andualem Ali Yimam,
Geert Morthier,
Dries Van Thourhout,
Peter Verheyen,
Marianna Pantouvaki,
Bernardette Kunert,
Joris Van Campenhout
Abstract:
Silicon photonics is a rapidly develo** technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integratio…
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Silicon photonics is a rapidly develo** technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxial growth of III-V materials remains the pinnacle in realizing cost-effective on-chip light sources. Here, we report the first electrically driven GaAs-based multi-quantum-well laser diodes fully fabricated on 300 mm Si wafers in a CMOS pilot manufacturing line. GaAs nano-ridge waveguides with embedded p-i-n diodes, InGaAs quantum wells and InGaP passivation layers are grown with high quality at wafer scale, leveraging selective-area epitaxy with aspect-ratio trap**. After III-V facet patterning and standard CMOS contact metallization, room-temperature continuous-wave lasing is demonstrated at wavelengths around 1020 nm in more than three hundred devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz, and laser operation up to 55 °C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond.
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Submitted 20 July, 2023;
originally announced September 2023.
Wafer-scale Graphene Electro-absorption Modulators Fabricated in a 300mm CMOS Platform
Authors:
Chenghan Wu,
Steven Brems,
Didit Yudistira,
Daire Cott,
Alexey Milenin,
Kevin Vandersmissen,
Arantxa Maestre,
Alba Centeno,
Amaia Zurutuza,
Joris Van Campenhout,
Cedric Huyghebaert,
Dries Van Thourhout,
Marianna Pantouvaki
Abstract:
Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a path to large-scale manufacturing with high yield at low cost. Here, we select single-layer graphene electro-absorption modulators as test vehicle and establish th…
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Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a path to large-scale manufacturing with high yield at low cost. Here, we select single-layer graphene electro-absorption modulators as test vehicle and establish their wafer-scale integration in a 300mm pilot CMOS foundry environment. A hardmask is used to shape graphene, while tungsten-based contacts are fabricated using the damascene approach to enable CMOS-compatible fabrication. By analyzing data from hundreds of devices per wafer, the impact of specific processing steps on the performance could be identified and optimized. After optimization, modulation depth of 50 $\pm$ 4 dB/mm is demonstrated on 400 devices measured using 6 V peak-to-peak voltage. The electro-optical bandwidth is up to 15.1 $\pm$ 1 1.8 GHz for 25$μ$m-long devices. The results achieved are comparable to lab-based record-setting graphene devices of similar design and CVD graphene quality. By demonstrating the reproducibility of the results across hundreds of devices, this work resolves the bottleneck of graphene wafer-scale integration. Furthermore, CMOS-compatible processing enables co-integration of graphene-based devices with other photonics and electronics building blocks on the same chip, and for high-volume low-cost manufacturing.
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Submitted 28 March, 2023;
originally announced April 2023.
