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Characterizing cryogenic amplifiers with a matched temperature-variable noise source
Authors:
Slawomir Simbierowicz,
Visa Vesterinen,
Joshua Milem,
Aleksi Lintunen,
Mika Oksanen,
Leif Roschier,
Leif Grönberg,
Juha Hassel,
David Gunnarsson,
Russell E. Lake
Abstract:
We present a cryogenic microwave noise source with a characteristic impedance of 50 $Ω$, which can be installed in a coaxial line of a cryostat. The bath temperature of the noise source is continuously variable between 0.1 K and 5 K without causing significant back-action heating on the sample space. As a proof-of-concept experiment, we perform Y-factor measurements of an amplifier cascade that in…
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We present a cryogenic microwave noise source with a characteristic impedance of 50 $Ω$, which can be installed in a coaxial line of a cryostat. The bath temperature of the noise source is continuously variable between 0.1 K and 5 K without causing significant back-action heating on the sample space. As a proof-of-concept experiment, we perform Y-factor measurements of an amplifier cascade that includes a traveling wave parametric amplifier and a commercial high electron mobility transistor amplifier. We observe system noise temperatures as low as $680^{+20}_{-200}$ mK at 5.7 GHz corresponding to $1.5^{+0.1}_{-0.7}$ excess photons. The system we present has immediate applications in the validation of solid-state qubit readout lines.
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Submitted 25 February, 2021; v1 submitted 7 September, 2020;
originally announced September 2020.
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Unconventional field-effect transistor composed of electrons floating on liquid helium
Authors:
K. Nasyedkin,
H. Byeon,
L. Zhang,
N. R. Beysengulov,
J. Milem,
S. Hemmerle,
R. Loloee,
J. Pollanen
Abstract:
We report on an unconventional $macroscopic$ field effect transistor composed of electrons floating above the surface of superfluid helium. With this device unique transport regimes are realized in which the charge density of the electron layer can be controlled in a manner not possible in other material systems. In particular, we are able to manipulate the collective behavior of the electrons to…
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We report on an unconventional $macroscopic$ field effect transistor composed of electrons floating above the surface of superfluid helium. With this device unique transport regimes are realized in which the charge density of the electron layer can be controlled in a manner not possible in other material systems. In particular, we are able to manipulate the collective behavior of the electrons to produce a highly non-uniform, but precisely controlled, charge density to reveal a negative source-drain current. This behavior can be understood by considering the propagation of damped charge oscillations along a transmission line formed by the inhomogeneous sheet of two-dimensional electrons above, and between, the source and drain electrodes of the transistor.
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Submitted 25 October, 2018; v1 submitted 12 July, 2018;
originally announced July 2018.
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Single-shot readout of hole spins in Ge
Authors:
Lada Vukušić,
Josip Kukučka,
Hannes Watzinger,
Joshua M. Milem,
Friedrich Schäffler,
Georgios Katsaros
Abstract:
The strong atomistic spin orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio-frequency reflectometry setup we were able to demonstrate single-shot readout of a germanium quantum dot hole spin and measure the spin lifetime. Hole spin relaxation times of about 90 $μ$s at 500…
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The strong atomistic spin orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio-frequency reflectometry setup we were able to demonstrate single-shot readout of a germanium quantum dot hole spin and measure the spin lifetime. Hole spin relaxation times of about 90 $μ$s at 500\,mT are reported. By analysing separately the spin-to-charge conversion and charge readout fidelities insight into the processes limiting the visibilities of hole spins has been obtained. The analyses suggest that very high hole visibilities are feasible at realistic experimental conditions underlying the potential of hole spins for the realization of viable qubit devices.
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Submitted 24 July, 2018; v1 submitted 5 March, 2018;
originally announced March 2018.
