Showing 1–28 of 28 results for author: Mikuz, M

Gain Recovery in Heavily Irradiated Low Gain Avalanche Detectors by High Temperature Annealing

Authors: I. Mandić, V. Cindro, A. Gorišek, B. Hiti, A. Howard, Ž. Kljun, G. Kramberger, M. Maček Kržmanc, M. Mikuž, B. Novak

Abstract: Studies of annealing at temperatures up to 450$^\circ$C with LGADs irradiated with neutrons are described. It was found that the performance of LGADs irradiated with 1.5e15 n/cm$^2$ was already improved at 5 minutes of annealing at 250$^\circ$C. Isochronal annealing for 30 minutes in 50$^\circ$C steps between 300$^\circ$C and 450$^\circ$C showed that the largest beneficial effect of annealing is a… ▽ More Studies of annealing at temperatures up to 450$^\circ$C with LGADs irradiated with neutrons are described. It was found that the performance of LGADs irradiated with 1.5e15 n/cm$^2$ was already improved at 5 minutes of annealing at 250$^\circ$C. Isochronal annealing for 30 minutes in 50$^\circ$C steps between 300$^\circ$C and 450$^\circ$C showed that the largest beneficial effect of annealing is at around 350$^\circ$C. Another set of devices was annealed for 60 minutes at 350$^\circ$C and this annealing significantly increased V$_{\mathrm{gl}}$. The effect is equivalent to reducing the effective acceptor removal constant by a factor of $\sim$ 4. Increase of V$_{\mathrm{gl}}$ is the consequence of increased effective space charge in the gain layer caused by formation of electrically active defects or re-activation of interstitial Boron atoms. △ Less

Submitted 20 March, 2023; v1 submitted 25 January, 2023; originally announced January 2023.

Tuning of gain layer do** concentration and Carbon implantation effect on deep gain layer

Authors: S. M. Mazza, C. Gee, Y. Zhao, R. Padilla, E. Ryan, N. Tournebise, B. Darby, F. McKinney-Martinez, H. F. -W. Sadrozinski, A. Seiden, B. Schumm, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž, M. Zavrtanik, R. Arcidiacono, N. Cartiglia, M. Ferrero, M. Mandurrino, V. Sola, A. Staiano, M. Boscardin, G. F. Della Betta, F. Ficorella , et al. (2 additional authors not shown)

Abstract: Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutrons at the JSI facility in Ljubljana. Sensors were irradiated to a maximum 1-MeV equivalent fluence of 2.5E15 Neq/cm2. The sensors analysed in this paper are an improvement after the lessons learned from previous FBK and… ▽ More Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutrons at the JSI facility in Ljubljana. Sensors were irradiated to a maximum 1-MeV equivalent fluence of 2.5E15 Neq/cm2. The sensors analysed in this paper are an improvement after the lessons learned from previous FBK and HPK productions that were already reported in precedent papers. The gain layer of HPK sensors was fine-tuned to optimize the performance before and after irradiation. FBK sensors instead combined the benefit of Carbon infusion and deep gain layer to further the radiation hardness of the sensors and reduced the bulk thickness to enhance the timing resolution. The sensor performance was measured in charge collection studies using \b{eta}-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. The collected charge and the timing resolution were measured as a function of bias voltage at -30C. Finally a correlation is shown between the bias voltage to deplete the gain layer and the bias voltage needed to reach a certain amount of gain in the sensor. HPK sensors showed a better performance before irradiation while maintaining the radiation hardness of the previous production. FBK sensors showed exceptional radiation hardness allowing a collected charge up to 10 fC and a time resolution of 40 ps at the maximum fluence. △ Less

Submitted 31 January, 2022; v1 submitted 21 January, 2022; originally announced January 2022.

Comments: arXiv admin note: text overlap with arXiv:2004.05260

Study of neutron irradiation effects in Depleted CMOS detector structures

Authors: I. Mandić, V. Cindro, J. Debevc, A. Gorišek, B. Hiti, G. Kramberger, P. Skomina, M. Zavrtanik, M. Mikuž, E. Vilella, C. Zhang, S. Powell, M. Franks, R. Marco-Hernandez, H. Steininger

Abstract: In this paper results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k$Ω$cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. Depletion depth was measured with Edge-TCT. Effective space charg… ▽ More In this paper results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k$Ω$cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. Depletion depth was measured with Edge-TCT. Effective space charge concentration $N_{\mathrm{eff}}$ was estimated from the dependence of depletion depth on bias voltage and studied as a function of neutron fluence. Dependence of $N_{\mathrm{eff}}$ on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. Long term accelerated annealing study of $N_{\mathrm{eff}}$ and detector current up to 1280 minutes at 60$^\circ$C was made. It was found that $N_{\mathrm{eff}}$ and current in reverse biased detector behaves as expected for irradiated silicon. △ Less

Submitted 15 February, 2022; v1 submitted 20 December, 2021; originally announced December 2021.

Inter-pad dead regions of irradiated FBK Low Gain Avalanche Detectors

Authors: B. Darby, S. M. Mazza, F. McKinney-Martinez, R. Padilla, H. F. -W. Sadrozinski, A. Seiden, B. Schumm, M. Wilder, Y. Zhao, R. Arcidiacono, N. Cartiglia, M. Ferrero, M. Mandurrino, V. Sola, A. Staiano, V. Cindro, G. Kranberger, I. Mandiz, M. Mikuz, M. Zavtranik, M. Boscardin, G. F. Della Betta, F. Ficorella, L. Pancheri, G. Paternoster

Abstract: Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and after irradiation with neutrons. In this study, the Inter-pad distances (IPDs), defined as the width of the distances between pads, were measured with a TCT laser system. The response of the laser was tuned using $β$-pa… ▽ More Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and after irradiation with neutrons. In this study, the Inter-pad distances (IPDs), defined as the width of the distances between pads, were measured with a TCT laser system. The response of the laser was tuned using $β$-particles from a 90Sr source. These insensitive "dead zones" are created by a protection structure to avoid breakdown, the Junction Termination Extension (JTE), which separates the pads. The effect of neutron radiation damage at \fluence{1.5}{15}, and \fluence{2.5}{15} on IPDs was studied. These distances are compared to the nominal distances given from the vendor, it was found that the higher fluence corresponds to a better matching of the nominal IPD. △ Less

Submitted 19 September, 2022; v1 submitted 24 November, 2021; originally announced November 2021.

Characterisation of analogue front end and time walk in CMOS active pixel sensor

Authors: B. Hiti, V. Cindro, A. Gorišek, M. Franks, R. Marco-Hernández, G. Kramberger, I. Mandić, M. Mikuž, S. Powell, H. Steininger, E. Vilella, M. Zavrtanik, C. Zhang

Abstract: In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5e14 neq/cm2. Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge a… ▽ More In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5e14 neq/cm2. Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 electrons at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results. △ Less

Submitted 23 November, 2021; v1 submitted 11 October, 2021; originally announced October 2021.

The ABC130 barrel module prototy** programme for the ATLAS strip tracker

Authors: Luise Poley, Craig Sawyer, Sagar Addepalli, Anthony Affolder, Bruno Allongue, Phil Allport, Eric Anderssen, Francis Anghinolfi, Jean-François Arguin, Jan-Hendrik Arling, Olivier Arnaez, Nedaa Alexandra Asbah, Joe Ashby, Eleni Myrto Asimakopoulou, Naim Bora Atlay, Ludwig Bartsch, Matthew J. Basso, James Beacham, Scott L. Beaupré, Graham Beck, Carl Beichert, Laura Bergsten, Jose Bernabeu, Prajita Bhattarai, Ingo Bloch , et al. (224 additional authors not shown)

Abstract: For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000… ▽ More For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototy** programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-25) and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototy** program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests. △ Less

Submitted 7 September, 2020; originally announced September 2020.

Comments: 82 pages, 66 figures

Journal ref: published 3 September 2020, Journal of Instrumentation, Volume 15, September 2020

Measurements with silicon detectors at extreme neutron fluences

Authors: I. Mandić, V. Cindro, A. Gorišek, B. Hiti, G. Kramberger, M. Mikuž, M. Zavrtanik, P. Skomina, S. Hidalgo, G. Pellegrini

Abstract: Thin pad detectors made from 75 $μ$m thick epitaxial silicon on low resistivity substrate were irradiated with reactor neutrons to fluences from 2.5$\times 10^{16}$ n/cm$^2$ to 1$\times 10^{17}$ n/cm$^2$. Edge-TCT measurements showed that the active detector thickness is limited to the epitaxial layer and does not extend into the low resistivity substrate even after the highest fluence. Detector c… ▽ More Thin pad detectors made from 75 $μ$m thick epitaxial silicon on low resistivity substrate were irradiated with reactor neutrons to fluences from 2.5$\times 10^{16}$ n/cm$^2$ to 1$\times 10^{17}$ n/cm$^2$. Edge-TCT measurements showed that the active detector thickness is limited to the epitaxial layer and does not extend into the low resistivity substrate even after the highest fluence. Detector current was measured under reverse and forward bias. The forward current was higher than the reverse at the same voltage but the difference gets smaller with increasing fluence. Rapid increase of current (breakdown) above ~ 700 V under reverse bias was observed. An annealing study at 60$^\circ$C was made to 1200 minutes of accumulated annealing time. It showed that the reverse current anneals with similar time constants as measured at lower fluences. A small increase of forward current due to annealing was seen. Collected charge was measured with electrons from $^{90}$Sr source in forward and reverse bias configurations. Under reverse bias the collected charge increased linearly with bias voltage up to 6000 electrons at 2.5$\times 10^{16}$ n/cm$^2$ and 3000 electrons at 1$\times 10^{17}$ n/cm$^2$. Rapid increase of noise was measured above $\sim$ 700 V reverse bias due to breakdown resulting in worse S/N ratio. At low bias voltages slightly more charge is measured under forward bias compared to reverse. However better S/N is achieved under reverse bias. Effective trap** times were estimated from charge collection measurements under forward bias showing that at high fluences they are much longer than values extrapolated from low fluence measurements - at 1$\times 10^{17}$ n/cm$^2$ a factor of 6 larger value was measured. △ Less

Submitted 2 September, 2020; v1 submitted 10 July, 2020; originally announced July 2020.

Annealing effects on operation of thin Low Gain Avalanche Detectors

Authors: G. Kramberger. V. Cindro, A. Howard, Z. Kljun, I. Mandic, M. Mikuz

Abstract: Several thin Low Gain Avalanche Detectors from Hamamatsu Photonics were irradiated with neutrons to different equivalent fluences up to $Φ_{eq}=3\cdot10^{15}$ cm$^{-2}$. After the irradiation they were annealed at 60$^\circ$C in steps to times $>20000$ minutes. Their properties, mainly full depletion voltage, gain layer depletion voltage, generation and leakage current, as well as their performanc… ▽ More Several thin Low Gain Avalanche Detectors from Hamamatsu Photonics were irradiated with neutrons to different equivalent fluences up to $Φ_{eq}=3\cdot10^{15}$ cm$^{-2}$. After the irradiation they were annealed at 60$^\circ$C in steps to times $>20000$ minutes. Their properties, mainly full depletion voltage, gain layer depletion voltage, generation and leakage current, as well as their performance in terms of collected charge and time resolution, were determined between the steps. It was found that the effect of annealing on timing resolution and collected charge is not very large and mainly occurs within the first few tens of minutes. It is a consequence of active initial acceptor concentration decrease in the gain layer with time, where changes of around 10\% were observed. For any relevant annealing times for detector operation the changes of effective do** concentration in the bulk negligibly influences the performance of the device, due to their small thickness and required high bias voltage operation. At very long annealing times the increase of the effective do** concentration in the bulk leads to a significant increase of the electric field in the gain layer and, by that, to the increase of gain at given voltage. The leakage current decreases in accordance with generation current annealing. △ Less

Submitted 29 May, 2020; originally announced May 2020.

Beam test results of IHEP-NDL Low Gain Avalanche Detectors(LGAD)

Authors: S. Xiao, S. Alderweireldt, S. Ali, C. Allaire, C. Agapopoulou, N. Atanov, M. K. Ayoub, G. Barone, D. Benchekroun, A. Buzatu, D. Caforio, L. Castillo García, Y. Chan, H. Chen, V. Cindro, L. Ciucu, J. Barreiro Guimarães da Costa, H. Cui, F. Davó Miralles, Y. Davydov, G. d'Amen, C. de la Taille, R. Kiuchi, Y. Fan, A. Falou , et al. (75 additional authors not shown)

Abstract: To meet the timing resolution requirement of up-coming High Luminosity LHC (HL-LHC), a new detector based on the Low-Gain Avalanche Detector(LGAD), High-Granularity Timing Detector (HGTD), is under intensive research in ATLAS. Two types of IHEP-NDL LGADs(BV60 and BV170) for this update is being developed by Institute of High Energy Physics (IHEP) of Chinese Academic of Sciences (CAS) cooperated wi… ▽ More To meet the timing resolution requirement of up-coming High Luminosity LHC (HL-LHC), a new detector based on the Low-Gain Avalanche Detector(LGAD), High-Granularity Timing Detector (HGTD), is under intensive research in ATLAS. Two types of IHEP-NDL LGADs(BV60 and BV170) for this update is being developed by Institute of High Energy Physics (IHEP) of Chinese Academic of Sciences (CAS) cooperated with Novel Device Laboratory (NDL) of Bei**g Normal University and they are now under detailed study. These detectors are tested with $5GeV$ electron beam at DESY. A SiPM detector is chosen as a reference detector to get the timing resolution of LGADs. The fluctuation of time difference between LGAD and SiPM is extracted by fitting with a Gaussian function. Constant fraction discriminator (CFD) method is used to mitigate the effect of time walk. The timing resolution of $41 \pm 1 ps$ and $63 \pm 1 ps$ are obtained for BV60 and BV170 respectively. △ Less

Submitted 14 May, 2020; originally announced May 2020.

Radiation Campaign of HPK Prototype LGAD sensors for the High-Granularity Timing Detector (HGTD)

Authors: X. Shi, M. K. Ayoub, J. Barreiro Guimarães da Costa, H. Cui, R. Kiuchi, Y. Fan, S. Han, Y. Huang, M. **g, Z. Liang, B. Liu, J. Liu, F. Lyu, B. Qi, K. Ran, L. Shan, L. Shi, Y. Tan, K. Wu, S. Xiao, T. Yang, Y. Yang, C. Yu, M. Zhao, X. Zhuang , et al. (52 additional authors not shown)

Abstract: We report on the results of a radiation campaign with neutrons and protons of Low Gain Avalanche Detectors (LGAD) produced by Hamamatsu (HPK) as prototypes for the High-Granularity Timing Detector (HGTD) in ATLAS. Sensors with an active thickness of 50~$μ$m were irradiated in steps of roughly 2$\times$ up to a fluence of $3\times10^{15}~\mathrm{n_{eq}cm^{-2}}$. As a function of the fluence, the co… ▽ More We report on the results of a radiation campaign with neutrons and protons of Low Gain Avalanche Detectors (LGAD) produced by Hamamatsu (HPK) as prototypes for the High-Granularity Timing Detector (HGTD) in ATLAS. Sensors with an active thickness of 50~$μ$m were irradiated in steps of roughly 2$\times$ up to a fluence of $3\times10^{15}~\mathrm{n_{eq}cm^{-2}}$. As a function of the fluence, the collected charge and time resolution of the irradiated sensors will be reported for operation at $-30^{\circ}$. △ Less

Submitted 28 April, 2020; originally announced April 2020.

Effect of deep gain layer and Carbon infusion on LGAD radiation hardness

Authors: R Padilla, C. Labitan, Z. Galloway, C. Gee, S. M. Mazza, F. McKinney-Martinez, H. F. -W. Sadrozinski, A. Seiden, B. Schumm, M. Wilder, Y. Zhao, H. Ren, Y. **, M. Lockerby, V. Cindro, G. Kramberger, I. Mandiz, M. Mikuz, M. Zavrtanik, R. Arcidiacono, N. Cartiglia, M. Ferrero, M. Mandurrino, V. Sola, A. Staiano

Abstract: The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in charge collection studies using b-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. Car… ▽ More The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in charge collection studies using b-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. Carbon infusion to the gain layer of the sensors was tested by FBK in the UFSD3 production. HPK instead produced LGADs with a very thin, highly doped and deep multiplication layer. The sensors were exposed to a neutron fluence from 4e14 neq/cm2 to 4e15 neq/cm2. The collected charge and the timing resolution were measured as a function of bias voltage at -30C, furthermore the profile of the capacitance over voltage of the sensors was measured. △ Less

Submitted 27 July, 2020; v1 submitted 10 April, 2020; originally announced April 2020.

Comments: 13 pages, 10 figures, 16 references

Layout and Performance of HPK Prototype LGAD Sensors for the High-Granularity Timing Detector

Authors: X. Yang, S. Alderweireldt, N. Atanov, M. K. Ayoub, J. Barreiro Guimaraes da Costa, L. Castillo Garcia, H. Chen, S. Christie, V. Cindro, H. Cui, G. D'Amen, Y. Davydov, Y. Y. Fan, Z. Galloway, J. J. Ge, C. Gee, G. Giacomini, E. L. Gkougkousis, C. Grieco, S. Grinstein, J. Grosse-Knetter, S. Guindon, S. Han, A. Howard, Y. P. Huang , et al. (54 additional authors not shown)

Abstract: The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology will cover the pseudo-rapidity region of $2.4<|η|<4.0$ with two end caps on each side and a total area of 6.4 $m^2$. The timing performance can be improved by implanting an internal gain layer that can produce signal with a fast rising… ▽ More The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology will cover the pseudo-rapidity region of $2.4<|η|<4.0$ with two end caps on each side and a total area of 6.4 $m^2$. The timing performance can be improved by implanting an internal gain layer that can produce signal with a fast rising edge, which improve significantly the signal-to-noise ratio. The required average timing resolution per track for a minimum-ionising particle is 30 ps at the start and 50 ps at the end of the HL-LHC operation. This is achieved with several layers of LGAD. The innermost region of the detector would accumulate a 1 MeV-neutron equivalent fluence up to $2.5 \times 10^{15} cm^{-2}$ before being replaced during the scheduled shutdowns. The addition of this new detector is expected to play an important role in the mitigation of high pile-up at the HL-LHC. The layout and performance of the various versions of LGAD prototypes produced by Hamamatsu (HPK) have been studied by the ATLAS Collaboration. The breakdown voltages, depletion voltages, inter-pad gaps, collected charge as well as the time resolution have been measured and the production yield of large size sensors has been evaluated. △ Less

Submitted 31 March, 2020; originally announced March 2020.

Comments: 17 pages, 20 figures

Experimental Study of Acceptor Removal in UFSD

Authors: Y. **, H. Ren, S. Christie, Z. Galloway, C. Gee, C. Labitan, M. Lockerby, F. Martinez-McKinney, S. M. Mazza, R. Padilla, H. F. -W. Sadrozinski, B. Schumm, A. Seiden, M. Wilder, W. Wyatt, Y. Zhao, R. Arcidiacono, N. Cartiglia, M. Ferrero, M. Mandurrino, F. Siviero, V. Sola, M. Tornago, V. Cindro, A. Howard , et al. (3 additional authors not shown)

Abstract: The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with C-V measurements of the do** concentration and with measurements of charge collection using charged particles. We find a perfect linear correlation between t… ▽ More The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with C-V measurements of the do** concentration and with measurements of charge collection using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C-V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented. △ Less

Submitted 16 September, 2020; v1 submitted 16 March, 2020; originally announced March 2020.

Comments: 14 pages, 10 Figs., Sumitted to HSTD12 Hiroshima 2019

Recent Results from Polycrystalline CVD Diamond Detectors

Authors: RD42 Collaboration, L. Bäni, A. Alexopoulos, M. Artuso, F. Bachmair, M. Bartosik, H. Beck, V. Bellini, V. Belyaev, B. Bentele, A. Bes, J. -M. Brom, M. Bruzzi, G. Chiodini, D. Chren, V. Cindro, G. Claus, J. Collot, J. Cumalat, A. Dabrowski, R. D'Alessandro, D. Dauvergne, W. de Boer, C. Dorfer, M. Dünser , et al. (87 additional authors not shown)

Abstract: Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse hei… ▽ More Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse height versus particle rate of unirradiated and irradiated polycrystalline CVD (pCVD) diamond pad detectors up to a particle flux of $20\,\mathrm{MHz/cm^2}$ and a fluence up to $4 \times 10^{15}\,n/\mathrm{cm^2}$. △ Less

Submitted 16 October, 2019; originally announced October 2019.

Comments: Talk presented at the 2019 Meeting of the Division of Particles and Fields of the American Physical Society (DPF2019), July 29 - August 2, 2019, Northeastern University, Boston, C1907293

Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC

Authors: M. Dyndal, V. Dao, P. Allport, I. Asensi Tortajada, M. Barbero, S. Bhat, D. Bortoletto, I. Berdalovic, C. Bespin, C. Buttar, I. Caicedo, R. Cardella, F. Dachs, Y. Degerli, H. Denizli, L. Flores Sanz de Acedo, P. Freeman, L. Gonella, A. Habib, T. Hemperek, T. Hirono, B. Hiti, T. Kugathasan, I. Mandić, D. Maneuski , et al. (19 additional authors not shown)

Abstract: Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silico… ▽ More Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. △ Less

Submitted 14 December, 2019; v1 submitted 26 September, 2019; originally announced September 2019.

Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements

Authors: R. Klanner, G. Kramberger, I. Mandic, M. Mikuz, M. Milovanovic, J. Schwandt

Abstract: A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are investigated by simulations of non-irradiated $n^+p$ pad sensors and by the analysis of edge-TCT data from non-irradiated $n^+p$ strip-detectors. The method is then used… ▽ More A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are investigated by simulations of non-irradiated $n^+p$ pad sensors and by the analysis of edge-TCT data from non-irradiated $n^+p$ strip-detectors. The method is then used to determine the position dependent electric field and charge density in $n^+p$ strip detectors irradiated by reactor neutrons to fluences between 1 and $10 \times 10^{15}$ cm$^{-2}$ for forward-bias voltages between 25 V and up to 550 V and for reverse-bias voltages between 50 V and 800 V. In all cases the velocity profiles are well described. The electric fields and charge densities determined provide quantitative insights into the effects of radiation damage for silicon sensors by reactor neutrons. △ Less

Submitted 11 September, 2019; originally announced September 2019.

Comments: 18 oages, 15 figures, 1 table

Three-dimensional charge transport map** by two-photon absorption edge transient-current technique in synthetic single-crystalline diamond

Authors: C. Dorfer, D. Hits, L. Kasmi, G. Kramberger, M. Lucchini, M. Mikuz, R. Wallny

Abstract: We demonstrate the application of two-photon absorption transient current technique to wide bandgap semiconductors. We utilize it to probe charge transport properties of single-crystal Chemical Vapor Deposition (scCVD) diamond. The charge carriers, inside the scCVD diamond sample, are excited by a femtosecond laser through simultaneous absorption of two photons. Due to the nature of two-photon abs… ▽ More We demonstrate the application of two-photon absorption transient current technique to wide bandgap semiconductors. We utilize it to probe charge transport properties of single-crystal Chemical Vapor Deposition (scCVD) diamond. The charge carriers, inside the scCVD diamond sample, are excited by a femtosecond laser through simultaneous absorption of two photons. Due to the nature of two-photon absorption, the generation of charge carriers is confined in space (3-D) around the focal point of the laser. Such localized charge injection allows to probe the charge transport properties of the semiconductor bulk with a fine-grained 3-D resolution. Exploiting spatial confinement of the generated charge, the electrical field of the diamond bulk was mapped at different depths and compared to an X-ray diffraction topograph of the sample. Measurements utilizing this method provide a unique way of exploring spatial variations of charge transport properties in transparent wide-bandgap semiconductors. △ Less

Submitted 24 May, 2019; v1 submitted 23 May, 2019; originally announced May 2019.

Comments: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.5090850

Report number: ETHAPS-20-01

Journal ref: Applied Physics Letters, Volume 114, Number 20, p. 203504, (2019)

Timing performance of small cell 3D silicon detectors

Authors: G. Kramberger, V. Cindro, D. Flores, S. Hidalgo, B. Hiti, M. Manna, I. Mandić, M. Mikuž, D. Quirion, G. Pellegrini, M. Zavrtanik

Abstract: A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with dedicated electronics used also for determining time resolution of Low Gain Avalanche Detectors (LGADs). The measurements were compared to those with LGADs and also simulations. The studies showed that the dominant cont… ▽ More A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with dedicated electronics used also for determining time resolution of Low Gain Avalanche Detectors (LGADs). The measurements were compared to those with LGADs and also simulations. The studies showed that the dominant contribution to the timing resolution comes from the time walk originating from different induced current shapes for hits over the cell area. This contribution decreases with higher bias voltages, lower temperatures and smaller cell sizes. It is around 30 ps for a 3D detector of 50x50 um2 cell at 150 V and -20C, which is comparable to the time walk due to Landau fluctuations in LGADs. It even improves for inclined tracks and larger pads composed of multiple cells. A good agreement between measurements and simulations was obtained, thus validating the simulation results. △ Less

Submitted 15 January, 2019; v1 submitted 8 January, 2019; originally announced January 2019.

Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2

Authors: S. M. Mazza, E. Estrada, Z. Galloway, C. Gee, A. Goto, Z. Luce, F. McKinney-Martinez, R. Rodriguez, H. F. -W. Sadrozinski, A. Seiden, B. Smithers, Y. Zhao, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž, M. Zavrtanik R. Arcidiacono, N. Cartiglia, M. Ferrero, M. Mandurrino, V. Sola, A. Staiano, M. Boscardin, G. F. Della Betta, F. Ficorella , et al. (2 additional authors not shown)

Abstract: The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiati… ▽ More The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiation with neutrons took place at the TRIGA reactor in Ljubljana, while the proton irradiation took place at CERN SPS. The sensors were exposed to a neutron fluence of 4*10e14, 8*1014, 1.5*10e15, 3*10e15, 6*10e15 neq/cm2 and to a proton fluence of 9.6*10e14 p/cm2, equivalent to a fluence of 6*10e14 neq/cm2. The internal gain and the timing resolution were measured as a function of bias voltage at -20C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. △ Less

Submitted 18 March, 2020; v1 submitted 15 April, 2018; originally announced April 2018.

Comments: arXiv admin note: text overlap with arXiv:1803.02690

Comparison of 35 and 50 μm thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2

Authors: Y. Zhao, N. Cartiglia, E. Estrada, Z. Galloway, C. Gee, A. Goto, Z. Luce, S. M. Mazza, F. McKinney-Martinez, R. Rodriguez, H. F. -W. Sadrozinski, A. Seiden V. Cindro, G. Kramberger, I. Mandić, M. Mikuž, M. Zavrtanik

Abstract: We report results from the testing of 35 μm thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 μm thick UFSD produced by HPK. The 35 μm thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested pre-irradiation and post-irr… ▽ More We report results from the testing of 35 μm thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 μm thick UFSD produced by HPK. The 35 μm thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source. The leakage current, capacitance, internal gain and the timing resolution were measured as a function of bias voltage at -20C and -27C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. Within the fluence range measured, the advantage of the 35 μm thick UFSD in timing accuracy, bias voltage and power can be established. △ Less

Submitted 5 March, 2018; originally announced March 2018.

Comments: 9 pages, 9 figures, HSTD11 Okinawa. arXiv admin note: text overlap with arXiv:1707.04961

Production and Integration of the ATLAS Insertable B-Layer

Authors: B. Abbott, J. Albert, F. Alberti, M. Alex, G. Alimonti, S. Alkire, P. Allport, S. Altenheiner, L. Ancu, E. Anderssen, A. Andreani, A. Andreazza, B. Axen, J. Arguin, M. Backhaus, G. Balbi, J. Ballansat, M. Barbero, G. Barbier, A. Bassalat, R. Bates, P. Baudin, M. Battaglia, T. Beau, R. Beccherle , et al. (352 additional authors not shown)

Abstract: During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and i… ▽ More During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector. △ Less

Submitted 6 June, 2018; v1 submitted 2 March, 2018; originally announced March 2018.

Comments: 90 pages in total. Author list: ATLAS IBL Collaboration, starting page 2. 69 figures, 20 tables. Published in Journal of Instrumentation. All figures available at: https://atlas.web.cern.ch/Atlas/GROUPS/PHYSICS/PLOTS/PIX-2018-001

Journal ref: Journal of Instrumentation JINST 13 T05008 (2018)

Charge collection properties of irradiated depleted CMOS pixel test structures

Authors: I. Mandić, V. Cindro, A. Gorišek, B. Hiti, G. Kramberger, M. Zavrtanik, M. Mikuž, T. Hemperek

Abstract: Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$Ω$cm are presented. Measurements were made before and after irradiation with reactor neutrons up to 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. Two sets of devices were investigated: unthinned (700 $μ$m) with substrate biased through… ▽ More Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$Ω$cm are presented. Measurements were made before and after irradiation with reactor neutrons up to 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. Two sets of devices were investigated: unthinned (700 $μ$m) with substrate biased through the implant on top and thinned (200 $μ$m) with processed and metallised back plane. Depleted depth was estimated with Edge-TCT and collected charge was measured with $^{90}$Sr source using an external amplifier with 25 ns sha** time. Depleted depth at given bias voltage decreased with increasing neutron fluence but it was still larger than 70 $μ$m at 250 V after the highest fluence. After irradiation much higher collected charge was measured with thinned detectors with processed back plane although the same depleted depth was observed with Edge-TCT. Most probable value of collected charge of over 5000 electrons was measured also after irradiation to 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. This is sufficient to ensure successful operation of these detectors at the outer layer of the pixel detector in the ATLAS experiment at the upgraded HL-LHC. △ Less

Submitted 22 January, 2018; v1 submitted 11 January, 2018; originally announced January 2018.

Radiation Hardness of Thin Low Gain Avalanche Detectors

Authors: G. Kramberger, M. Carulla, E. Cavallaro, V. Cindro, D. Flores, Z. Galloway, S. Grinstein, S. Hidalgo, V. Fadeyev, J. Lange, I. Mandic, G. Medin, A. Merlos, F. McKinney-Martinez, M. Mikuz, D. Quirion, G. Pellegrini, M. Petek, H. F-W. Sadrozinski, A. Seiden, M. Zavrtanik

Abstract: Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate do** of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations.… ▽ More Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate do** of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer do** profiles and thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (~300 um) and offer larger charge collection with respect to detectors without gain layer for fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors. △ Less

Submitted 16 November, 2017; originally announced November 2017.

Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2

Authors: Z. Galloway, V. Fadeyev, P. Freeman, E. Gkougkousis, B. Gruey, C. A. Labitan, Z. Luce, F. McKinney-Martinez, H. F. -W. Sadrozinski, A. Seiden, E. Spencer, M. Wilder, N. Woods, A. Zatserklyaniy, Y. Zhao, N. Cartiglia, M. Ferrero, S. Giordanengo, M. Mandurrino, A. Staiano, V. Sola, F. Cenna, F. Fausti, R. Arcidiacono, F. Carnasecchi , et al. (5 additional authors not shown)

Abstract: In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15, 6e15 n/cm2. The UFSD used in this study are circular 50 micro-meter thick Low-Gain Avalanche Detectors (LGAD), with a 1.0 mm diameter active area. They have been produced by Hamamatsu Photonics (HPK), Japan, with pre-radiation internal gain in th… ▽ More In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15, 6e15 n/cm2. The UFSD used in this study are circular 50 micro-meter thick Low-Gain Avalanche Detectors (LGAD), with a 1.0 mm diameter active area. They have been produced by Hamamatsu Photonics (HPK), Japan, with pre-radiation internal gain in the range 10-100 depending on the bias voltage. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particle (MIPs) from a 90Sr based \b{eta}-source. The leakage current, internal gain and the timing resolution were measured as a function of bias voltage at -20C and -30C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. The dependence of the gain upon the irradiation fluence is consistent with the concept of acceptor removal and the gain decreases from about 80 pre-irradiation to 7 after a fluence of 6e15 n/cm2. Consequently, the timing resolution was found to deteriorate from 20 ps to 50 ps. The results indicate that the most accurate time resolution is obtained at a value of the constant fraction discriminator (CFD) threshold used to determine the time of arrival varying with fluence, from 10% pre-radiation to 60% at the highest fluence. Key changes to the pulse shape induced by irradiation, i.e. (i) a reduce sensitivity of the pulse shape on the initial non-uniform charge deposition, (ii) the shortening of the rise time and (iii) the reduced pulse height, were compared with the WF2 simulation program and found to be in agreement. △ Less

Submitted 10 April, 2020; v1 submitted 16 July, 2017; originally announced July 2017.

Comments: 18 pages, 21 figures, 1 table

Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process

Authors: B. Hiti, V. Cindro, A. Gorišek, T. Hemperek, T. Kishishita, G. Kramberger, H. Krüger, I. Mandić, M. Mikuž, N. Wermes, M. Zavrtanik

Abstract: Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiat… ▽ More Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. In this article we present results of an extensive irradiation hardness study with neutrons up to a fluence of 1x10e16 neq/cm2. Charge collection in a passive pixelated structure was measured by Edge Transient Current Technique (E-TCT). The evolution of the effective space charge concentration was found to be compliant with the acceptor removal model, with the minimum of the space charge concentration being reached after 5x10e14 neq/cm2. An investigation of the in-pixel uniformity of the detector response revealed parasitic charge collection by the epitaxial silicon layer characteristic for the SOI design. The results were backed by a numerical simulation of charge collection in an equivalent detector layout. △ Less

Submitted 26 October, 2017; v1 submitted 23 January, 2017; originally announced January 2017.

Comments: 14 pages, 10 figures

Neutron irradiation test of depleted CMOS pixel detector prototypes

Authors: Igor Mandić, Vladimir Cindro, Andrej Gorišek, Bojan Hiti, Gregor Kramberger, Marko Mikuž, Marko Zavrtanik, Tomasz Hemperek, Michael Daas, Fabian Hügging, Hans Krügerc, David-Leon Pohl, Norbert Wermes, Laura Gonella

Abstract: Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$Ω$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS technology in tracking detectors for experiments at HL-LHC upgrade. Measurements were made with passive d… ▽ More Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$Ω$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS technology in tracking detectors for experiments at HL-LHC upgrade. Measurements were made with passive detector structures in which current pulses induced on charge collecting electrodes could be directly observed. Thickness of depleted layer was estimated and studied as function of neutron irradiation fluence. An increase of depletion thickness was observed after first two irradiation steps to 1$\cdot$10$^{13}$ n/cm$^{2}$ and 5$\cdot$10$^{13}$ n/cm$^{2}$ and attributed to initial acceptor removal. At higher fluences the depletion thickness at given voltage decreases with increasing fluence because of radiation induced defects contributing to the effective space charge concentration. The behaviour is consistent with that of high resistivity silicon used for standard particle detectors. The measured thickness of the depleted layer after irradiation with 1$\cdot$10$^{15}$ n/cm$^{2}$ is more than 50 $μ$m at 100 V bias. This is sufficient to guarantee satisfactory signal/noise performance on outer layers of pixel trackers in HL-LHC experiments. △ Less

Submitted 18 January, 2017; originally announced January 2017.

Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

Authors: N. Cartiglia, A. Staiano, V. Sola, R. Arcidiacono, R. Cirio, F. Cenna, M. Ferrero, V. Monaco, R. Mulargia, M. Obertino, F. Ravera, R. Sacchi, A. Bellora, S. Durando, M. Mandurrino, N. Minafra, V. Fadeyev, P. Freeman, Z. Galloway, E. Gkougkousis, H. Grabas, B. Gruey, C. A. Labitan, R. Losakul, Z. Luce , et al. (18 additional authors not shown)

Abstract: In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below th… ▽ More In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test belongs to the first production of thin (50 μm) sensors, with an pad area of 1.4 mm2. The gain was measured to vary between 5 and 70 depending on the bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution, determined comparing the time of arrival of the particle in one or more UFSD and the trigger counter, for single UFSD was measured to be 35 ps for a bias voltage of 200 V, and 26 ps for a bias voltage of 240 V, and for the combination of 3 UFSD to be 20 ps for a bias voltage of 200 V, and 15 ps for a bias voltage of 240 V. △ Less

Submitted 3 January, 2017; v1 submitted 30 August, 2016; originally announced August 2016.

Comments: 7 pages, 8 figures, 1 table, Subm. to NIM A

Journal ref: NIM A850, 1 April 2017, pages 83-88

Expected Performance of the ATLAS Experiment - Detector, Trigger and Physics

Authors: The ATLAS Collaboration, G. Aad, E. Abat, B. Abbott, J. Abdallah, A. A. Abdelalim, A. Abdesselam, O. Abdinov, B. Abi, M. Abolins, H. Abramowicz, B. S. Acharya, D. L. Adams, T. N. Addy, C. Adorisio, P. Adragna, T. Adye, J. A. Aguilar-Saavedra, M. Aharrouche, S. P. Ahlen, F. Ahles, A. Ahmad, H. Ahmed, G. Aielli, T. Akdogan , et al. (2587 additional authors not shown)

Abstract: A detailed study is presented of the expected performance of the ATLAS detector. The reconstruction of tracks, leptons, photons, missing energy and jets is investigated, together with the performance of b-tagging and the trigger. The physics potential for a variety of interesting physics processes, within the Standard Model and beyond, is examined. The study comprises a series of notes based on… ▽ More A detailed study is presented of the expected performance of the ATLAS detector. The reconstruction of tracks, leptons, photons, missing energy and jets is investigated, together with the performance of b-tagging and the trigger. The physics potential for a variety of interesting physics processes, within the Standard Model and beyond, is examined. The study comprises a series of notes based on simulations of the detector and physics processes, with particular emphasis given to the data expected from the first years of operation of the LHC at CERN. △ Less

Submitted 14 August, 2009; v1 submitted 28 December, 2008; originally announced January 2009.