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Asymmetry-induced resistive switching in Ag-Ag$_{2}$S-Ag memristors enabling a simplified atomic-scale memory design
Authors:
A. Gubicza,
D. Zs. Manrique,
L. Pósa,
C. J. Lambert,
G. Mihály,
M. Csontos,
A. Halbritter
Abstract:
Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate equivalent, stable switching behavior in metallic Ag-Ag$_{2}$S-Ag nan…
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Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate equivalent, stable switching behavior in metallic Ag-Ag$_{2}$S-Ag nanojunctions at room temperature. Our experimental results and numerical simulations reveal that the polarity of the switchings is solely determined by the geometrical asymmetry of the electrode surfaces. By the lithographical design of a proof of principle device we demonstrate the merits of simplified fabrication of atomic-scale, robust planar Ag$_{2}$S memory cells.
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Submitted 14 April, 2016;
originally announced April 2016.
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GHz Operation of Nanometer-Scale Metallic Memristors: Highly Transparent Conductance Channels in Ag$_{2}$S Devices
Authors:
A. Geresdi,
M. Csontos,
A. Gubicza,
A. Halbritter,
G. Mihály
Abstract:
The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag$_{2}$S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy we…
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The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag$_{2}$S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy we studied the nature of electron transport in the active volume of the memristive junctions showing that both the ON and OFF states correspond to truly nanometer scale, highly transparent metallic channels. Our results demonstrate the merits of Ag$_{2}$S nanojunctions as nanometer-scale memory cells with GHz operation frequencies.
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Submitted 18 October, 2013;
originally announced October 2013.
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From stochastic single atomic switch to nanoscale resistive memory device
Authors:
A. Geresdi,
A. Halbritter,
A. Gyenis,
P. Makk,
G. Mihály
Abstract:
Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to the nanometer sizes. Here we study the switching characteristics of nanoscale junctions created between a tungsten tip and a silver film covered by a thin ionic c…
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Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to the nanometer sizes. Here we study the switching characteristics of nanoscale junctions created between a tungsten tip and a silver film covered by a thin ionic conductor layer. Atomic-sized junctions show spectacular current induced switching characteristics, but both the magnitude of the switching voltage and the direction of the switching vary randomly for different junctions. In contrast, for somewhat larger junctions with diameters of a few nanometers a well defined, reproducible switching behavior is observed which is associated with the formation and destruction of nanoscale channels in the ionic conductor surface layer. Our results define a low size limit of 3 nm for reliable ionic nano-switches, which is well below the resolution of recent lithographic techniques.
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Submitted 22 April, 2011; v1 submitted 28 June, 2010;
originally announced June 2010.
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Transition from coherent mesoscopic single particle transport to proximity Josephson-current
Authors:
A. Geresdi,
A. Halbritter,
G. Mihály
Abstract:
The transport through a metal-superconductor interface is governed by a special charge conversion process, the Andreev reflection, where each incident electron drags another electron with itself to form a Cooper pair. At the normal side a hole is left behind dressed by superconducting correlations. For a low transparency interface the simultaneous transfer of two charges is strongly suppressed lea…
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The transport through a metal-superconductor interface is governed by a special charge conversion process, the Andreev reflection, where each incident electron drags another electron with itself to form a Cooper pair. At the normal side a hole is left behind dressed by superconducting correlations. For a low transparency interface the simultaneous transfer of two charges is strongly suppressed leading to a reduced conductance. Here we demonstrate that this reduced conductance can be turned to an infinite one by tuning the nanoscale geometry. Creating variable size nanojunctions between a thin metallic film and a superconducting tip we study how multiple phase-coherent scatterings enhance the superconducting correlations at the normal side. By increasing the coherent volume of carriers initially the transmission through the interface is continuously enhanced. However, as the phase-coherent volume reaches the opposite surface of the thin film a resonator is formed, and a robust transition is induced due to Cooper pair condensation.
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Submitted 22 April, 2011; v1 submitted 24 June, 2010;
originally announced June 2010.
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Magnetic order induced crystal symmetry lowering in ACr$_2$O$_4$ ferrimagnetic spinels
Authors:
S. Bordacs,
D. Varjas,
I. Kezsmarki,
G. Mihaly,
L. Baldassarre,
A. Abouelsayed,
C. A. Kuntscher,
K. Ohgushi,
Y. Tokura
Abstract:
We demonstrate that the onset of complex spin orders in ACr$_2$O$_4$ spinels with magnetic A$=$Co, Fe and Cu ions lowers the lattice symmetry. This is clearly indicated by the emergence of anisotropic lattice dynamics -- as evidenced by the pronounced phonon splittings -- even when experiments probing static distortions fail. We show that the crystal symmetry in the magnetic phase is reduced fro…
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We demonstrate that the onset of complex spin orders in ACr$_2$O$_4$ spinels with magnetic A$=$Co, Fe and Cu ions lowers the lattice symmetry. This is clearly indicated by the emergence of anisotropic lattice dynamics -- as evidenced by the pronounced phonon splittings -- even when experiments probing static distortions fail. We show that the crystal symmetry in the magnetic phase is reduced from tetragonal to orthorhombic for FeCr$_2$O$_4$ and CuCr$_2$O$_4$ with Jahn-Teller active A-site ions. The conical spin structure in FeCr$_2$O$_4$ is also manifested in the phonon frequencies. In contrast, the multiferroic CoCr$_2$O$_4$ with no orbital degrees of freedom remains nearly cubic in its ground state.
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Submitted 23 April, 2009;
originally announced April 2009.
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Nanoscale spin-polarization in dilute magnetic semiconductor (In,Mn)Sb
Authors:
A. Geresdi,
A. Halbritter,
M. Csontos,
Sz. Csonka,
G. Mihaly,
T. Wojtowicz,
X. Liu,
B. Janko,
J. K. Furdyna
Abstract:
Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface transparency, and study the crossover from ballistic to diffusive transport regime as contact size is varied. Application of a Nb tip to a (In,Mn)Sb sample with Cur…
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Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface transparency, and study the crossover from ballistic to diffusive transport regime as contact size is varied. Application of a Nb tip to a (In,Mn)Sb sample with Curie temperature Tc of 5.4 K allowed the determination of spin-polarization when the ferromagnetic phase transition temperature is crossed. We find a striking difference between the temperature dependence of the local spin polarization and of the macroscopic magnetization, and demonstrate that nanoscale clusters with magnetization close to the saturated value are present even well above the magnetic phase transition temperature.
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Submitted 9 January, 2008;
originally announced January 2008.
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Multicritical end-point of the first-order ferromagnetic transition in colossal magnetoresistive manganites
Authors:
L. Demkó,
I. Kézsmárki,
G. Mihály,
N. Takeshita,
Y. Tomioka,
Y. Tokura
Abstract:
We have studied the bandwidth-temperature-magnetic field phase diagram of RE(0.55)Sr(0.45)MnO(3) colossal magnetoresistance manganites with ferromagnetic metallic (FM) ground state. The bandwidth (or equivalently the double exchange interaction) was controlled both via chemical substitution and hydrostatic pressure with a focus on the vicinity of the critical pressure p* where the character of t…
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We have studied the bandwidth-temperature-magnetic field phase diagram of RE(0.55)Sr(0.45)MnO(3) colossal magnetoresistance manganites with ferromagnetic metallic (FM) ground state. The bandwidth (or equivalently the double exchange interaction) was controlled both via chemical substitution and hydrostatic pressure with a focus on the vicinity of the critical pressure p* where the character of the zero-field FM transition changes from first to second order. Below p* the first-order FM transition extends up to a critical magnetic field, H_cr. It is suppressed by pressure and approaches zero on the larger bandwidth side where the surface of the first-order FM phase boundary is terminated by a multicritical end-point (p*~32 kbar, T*~188 K, H*=0). The change in the character of the transition and the decrease of the CMR effect is attributed to the reduced CO/OO fluctuations.
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Submitted 28 November, 2007; v1 submitted 27 November, 2007;
originally announced November 2007.
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Anomalous Hall effect in (In,Mn)Sb dilute magnetic semiconductor
Authors:
G. Mihaly,
M. Csontos,
S. Bordacs,
I. Kezsmarki,
T. Wojtowicz,
X. Liu,
B. Janko,
J. K. Furdyna
Abstract:
High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall…
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High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall effect. These observations suggest that the anomalous Hall effect in (In,Mn)Sb is an intrinsic property and support the application of the Berry phase theory for (III,Mn)V semiconductors. We propose a phenomenological description of the anomalous Hall conductivity, based on a field-dependent relative shift of the heavy- and light-hole valence bands and the split-off band.
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Submitted 10 October, 2007; v1 submitted 1 September, 2007;
originally announced September 2007.
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High-pressure infrared spectroscopy: tuning of the low-energy excitations in correlated electron systems
Authors:
I. Kezsmarki,
R. Gaal,
C. C. Homes,
B. Sipos,
H. Berger,
S. Bordacs,
G. Mihaly,
L. Forro
Abstract:
We have extended the range of the high-pressure optical spectroscopy to the far-infrared region kee** the accuracy of ambient-pressure experiments. The newly-developed method offers a powerful tool for the study of pressure-induced phase transitions and electronic-structural changes in correlated electron systems. The novel-type optical pressure cell, equipped with large free-aperture diamond…
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We have extended the range of the high-pressure optical spectroscopy to the far-infrared region kee** the accuracy of ambient-pressure experiments. The newly-developed method offers a powerful tool for the study of pressure-induced phase transitions and electronic-structural changes in correlated electron systems. The novel-type optical pressure cell, equipped with large free-aperture diamond window, allows the measurement of optical reflectivity down to $ω\approx20-30$ cm$^{-1}$ for hydrostatic pressures up to $p\approx26$ kbar. The efficiency of the technique is demonstrated by the investigation of the 2-dimensional charge-density-wave 1$T$-TaS$_2$ whose electronic structure shows high sensitivity to external pressure. The room-temperature semi-metallic phase of 1$T$-TaS$_2$ is effectively extended by application of pressure and stabilized as the ground state above $p=14$ kbar. The corresponding fully incoherent low-energy optical conductivity is almost temperature independent below T=300 K. For intermediate pressures, the onset of the low-temperature insulating phase is reflected by the sudden drop of the reflectivity and by the emergence of sharp phonon resonances.
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Submitted 29 August, 2007;
originally announced August 2007.
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Huge negative differential conductance in Au-H2 molecular nanojunctions
Authors:
A. Halbritter,
P. Makk,
Sz. Csonka,
G. Mihaly
Abstract:
Experimental results showing huge negative differential conductance in gold-hydrogen molecular nanojunctions are presented. The results are analyzed in terms of two-level system (TLS) models: it is shown that a simple TLS model cannot produce peaklike structures in the differential conductance curves, whereas an asymmetrically coupled TLS model gives perfect fit to the data. Our analysis implies…
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Experimental results showing huge negative differential conductance in gold-hydrogen molecular nanojunctions are presented. The results are analyzed in terms of two-level system (TLS) models: it is shown that a simple TLS model cannot produce peaklike structures in the differential conductance curves, whereas an asymmetrically coupled TLS model gives perfect fit to the data. Our analysis implies that the excitation of a bound molecule to a large number of energetically similar loosely bound states is responsible for the peaklike structures. Recent experimental studies showing related features are discussed within the framework of our model.
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Submitted 19 February, 2008; v1 submitted 14 June, 2007;
originally announced June 2007.
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The electronic structure and the phases of BaVS3
Authors:
P. Fazekas,
K. Penc,
K. Radnoczi,
N. Barisic,
H. Berger,
L. Forro,
S. Mitrovic,
A. Gauzzi,
L. Demko,
I. Kezsmarki,
G. Mihaly
Abstract:
BaVS3 is a moderately correlated d-electron system with a rich phase diagram. To construct the corresponding minimal electronic model, one has to decide which d-states are occupied, and to which extent. The ARPES experiment presented here shows that the behavior of BaVS3 is governed by the coexistence of wide-band (A_1g) and narrow-band (twofold degenerate E) d-electrons. We sketch a lattice fer…
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BaVS3 is a moderately correlated d-electron system with a rich phase diagram. To construct the corresponding minimal electronic model, one has to decide which d-states are occupied, and to which extent. The ARPES experiment presented here shows that the behavior of BaVS3 is governed by the coexistence of wide-band (A_1g) and narrow-band (twofold degenerate E) d-electrons. We sketch a lattice fermion model which may serve as a minimal model of BaVS3. This serves foremost for the understanding of the metal-insulator in pure BaVS3 and its absence in some related compounds. The nature of the low temperature magnetic order differs for several systems which may be described in terms of the same electron model. We describe several recent experiments which give information about magnetic order at high pressures. In particular, we discuss field-induced insulator-to-metal transition at slightly subcritical pressures, and an evidence for magnetic order in the high-pressure metallic phase. The phase diagram of Sr-doped BaVS3 is also discussed. The complexity of the phases of BaVS3 arises from the fact that it is simultaneously unstable against several kinds of instabilities.
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Submitted 21 February, 2007;
originally announced February 2007.
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Magnetic-field-induced transition in BaVS3
Authors:
P. Fazekas,
N. Barisic,
I. Kezsmarki,
L. Demko,
H. Berger,
L. Forro,
G. Mihaly
Abstract:
The metal-insulator transition (MIT) of BaVS3 is suppressed under pressure and above the critical pressure of p~2GPa the metallic phase is stabilized. We present the results of detailed magnetoresistivity measurements carried out at pressures near the critical value, in magnetic fields up to B=12T. We found that slightly below the critical pressure the structural tetramerization -- which drives…
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The metal-insulator transition (MIT) of BaVS3 is suppressed under pressure and above the critical pressure of p~2GPa the metallic phase is stabilized. We present the results of detailed magnetoresistivity measurements carried out at pressures near the critical value, in magnetic fields up to B=12T. We found that slightly below the critical pressure the structural tetramerization -- which drives the MIT -- is combined with the onset of magnetic correlations. If the zero-field transition temperature is suppressed to a sufficiently low value (T_MI<15K), the system can be driven into the metallic state by application of magnetic field. The main effect is not the reduction of T_MI with increasing B, but rather the broadening of the transition due to the applied magnetic field. We tentatively ascribe this phenomenon to the influence on the magnetic structure coupled to the bond-order of the tetramers.
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Submitted 21 February, 2007; v1 submitted 12 July, 2006;
originally announced July 2006.
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Separation of orbital contributions to the optical conductivity of BaVS$_3$
Authors:
I. Kezsmarki,
G. Mihaly,
R. Gaal,
N. Barisic,
A. Akrap,
H. Berger,
L. Forro,
C. C. Homes,
L. Mihaly
Abstract:
The correlation-driven metal-insulator transition (MIT) of BaVS$_3$ was studied by polarized infrared spectroscopy. In the metallic state two types of electrons coexist at the Fermi energy: The quasi 1D metallic transport of $A_{1g}$ electrons is superimposed on the isotropic hop** conduction of localized $E_g$ electrons. The "bad-metal" character and the weak anisotropy are the consequences o…
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The correlation-driven metal-insulator transition (MIT) of BaVS$_3$ was studied by polarized infrared spectroscopy. In the metallic state two types of electrons coexist at the Fermi energy: The quasi 1D metallic transport of $A_{1g}$ electrons is superimposed on the isotropic hop** conduction of localized $E_g$ electrons. The "bad-metal" character and the weak anisotropy are the consequences of the large effective mass $m_{eff}\approx7m_e$ and scattering rate $Γ\geq160$ meV of the quasi-particles in the $A_{1g}$ band. There is a pseudo-gap above $T_{MI}=69$ K, and in the insulating phase the gap follows the BCS-like temperature dependence of the structural order parameter with $Δ_{ch}\approx42$ meV in the ground state. The MIT is described in terms of a weakly coupled two-band model.
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Submitted 13 February, 2006;
originally announced February 2006.
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Quantum critical phase in BaVS$_3$
Authors:
N. Barišić,
I. Kézsmárki,
P. Fazekas,
G. Mihály,
H. Berger,
L. Demkó,
L. Forró
Abstract:
We study the high-pressure metallic phase of high-purity single crystals of BaVS$_3$ by measuring the temperature, pressure, and magnetic field dependence of the resistivity. Above the critical pressure of $p_{\rm cr}=1.97$GPa an extended non-Fermi liquid $p-T$ regime emerges with resistivity exponent $1.5 \le n<2$, crossing over to a FL only around $p=2.7$GPa. A hysteretic feature indicates tha…
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We study the high-pressure metallic phase of high-purity single crystals of BaVS$_3$ by measuring the temperature, pressure, and magnetic field dependence of the resistivity. Above the critical pressure of $p_{\rm cr}=1.97$GPa an extended non-Fermi liquid $p-T$ regime emerges with resistivity exponent $1.5 \le n<2$, crossing over to a FL only around $p=2.7$GPa. A hysteretic feature indicates that close to the insulator--metal boundary, the system is magnetically ordered. Our findings reveal a close analogy between the extended partially ordered NFL state of non-conventional itinerant magnets and the corresponding state of BaVS$_3
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Submitted 10 February, 2006;
originally announced February 2006.
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Magnetic and Transport Properties of Fe-Ag granular multilayers
Authors:
M. Csontos,
J. Balogh,
D. Kaptas,
L. F. Kiss,
G. Mihaly
Abstract:
Results of magnetization, magnetotransport and Mossbauer spectroscopy measurements of sequentially evaporated Fe-Ag granular composites are presented. The strong magnetic scattering of the conduction electrons is reflected in the sublinear temperature dependence of the resistance and in the large negative magnetoresistance. The simultaneous analysis of the magnetic properties and the transport b…
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Results of magnetization, magnetotransport and Mossbauer spectroscopy measurements of sequentially evaporated Fe-Ag granular composites are presented. The strong magnetic scattering of the conduction electrons is reflected in the sublinear temperature dependence of the resistance and in the large negative magnetoresistance. The simultaneous analysis of the magnetic properties and the transport behavior suggests a bimodal grain size distribution. A detailed quantitative description of the unusual features observed in the transport properties is given.
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Submitted 13 June, 2005; v1 submitted 3 June, 2005;
originally announced June 2005.
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Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor
Authors:
M. Csontos,
T. Wojtowicz,
X. Liu,
M. Dobrowolska B. Jankó,
J. K. Furdyna,
G. Mihály
Abstract:
Magnetoresistance measurements on the magnetic semiconductor (In,Mn)Sb suggest that magnetic scattering in this material is dominated by isolated Mn$^{2+}$ ions located outside the ferromagnetically-ordered regions when the system is below $T_{c}$. A model is proposed, based on the $p$-$d$ exchange between spin-polarized charge carriers and localized Mn$^{2+}$ ions, which accounts for the observ…
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Magnetoresistance measurements on the magnetic semiconductor (In,Mn)Sb suggest that magnetic scattering in this material is dominated by isolated Mn$^{2+}$ ions located outside the ferromagnetically-ordered regions when the system is below $T_{c}$. A model is proposed, based on the $p$-$d$ exchange between spin-polarized charge carriers and localized Mn$^{2+}$ ions, which accounts for the observed behavior both below and above the ferromagnetic phase transition. The suggested picture is further verified by high-pressure experiments, in which the degree of magnetic interaction can be varied in a controlled way.
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Submitted 24 May, 2005;
originally announced May 2005.
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Pulling gold nanowires with a hydrogen clamp
Authors:
Sz. Csonka,
A. Halbritter,
G. Mihaly
Abstract:
In this paper an experimental study of the interaction of hydrogen molecules with gold nanowires is presented. Our results show, that chains of Au atoms can also be pulled in hydrogen environment, however in this case the conductance of the chain is strongly reduced compared to the perfect transmission of pure Au chains. The comparison of our experiments with recent theoretical prediction for th…
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In this paper an experimental study of the interaction of hydrogen molecules with gold nanowires is presented. Our results show, that chains of Au atoms can also be pulled in hydrogen environment, however in this case the conductance of the chain is strongly reduced compared to the perfect transmission of pure Au chains. The comparison of our experiments with recent theoretical prediction for the hydrogen welding of Au nanowires implies that a hydrogen molecule can even be incorporated in the gold nanocontact, and this hydrogen clamp is strong enough to pull a chain of gold atoms.
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Submitted 28 November, 2005; v1 submitted 17 February, 2005;
originally announced February 2005.
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Conductance of Pd-H nanojunctions
Authors:
Sz. Csonka,
A. Halbritter,
G. Mihaly,
O. I. Shklyarevskii,
S. Speller,
H. van Kempen
Abstract:
Results of an experimental study of palladium nanojunctions in hydrogen environment are presented. Two new hydrogen-related atomic configurations are found, which have a conductances of ~0.5 and ~1 quantum unit (2e^2/h). Phonon spectrum measurements demonstrate that these configurations are situated between electrodes containing dissolved hydrogen. The crucial differences compared to the previou…
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Results of an experimental study of palladium nanojunctions in hydrogen environment are presented. Two new hydrogen-related atomic configurations are found, which have a conductances of ~0.5 and ~1 quantum unit (2e^2/h). Phonon spectrum measurements demonstrate that these configurations are situated between electrodes containing dissolved hydrogen. The crucial differences compared to the previously studied Pt-H_2 junctions, and the possible microscopic realizations of the new configurations in palladium-hydrogen atomic-sized contacts are discussed.
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Submitted 22 April, 2004;
originally announced April 2004.
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Hydrogen-assisted distortion of gold nanowires
Authors:
A. Halbritter,
Sz. Csonka,
G. Mihaly,
O. I. Shklyarevskii,
S. Speller,
H. van Kempen
Abstract:
In this paper the influence of adsorbed hydrogen on the behavior of gold nanojunctions is investigated. It is found, that the hydrogen environment has a strong effect on the conductance of atomic-sized gold junctions, which is markedly reflected by the growth of an additional peak in the conductance histogram at 0.5 quantum unit, 2e^2/h. The statistical analysis of the conductance traces implies…
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In this paper the influence of adsorbed hydrogen on the behavior of gold nanojunctions is investigated. It is found, that the hydrogen environment has a strong effect on the conductance of atomic-sized gold junctions, which is markedly reflected by the growth of an additional peak in the conductance histogram at 0.5 quantum unit, 2e^2/h. The statistical analysis of the conductance traces implies that the new peak arises due to the hydrogen-assisted distortion of atomic gold chains.
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Submitted 7 April, 2004;
originally announced April 2004.
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Pressure induced suppression of the singlet insulator phase in BaVS$_3$: infrared optical study
Authors:
I. Kézsmárki,
G. Mihály,
R. Gaál,
N. Barišić,
H. Berger,
L. Forró,
C. C. Homes,
L. Mihály
Abstract:
The metal-insulator (MI) transition in BaVS$_3$ has been studied at ambient pressure and under hydrostatic pressure up to $p=26 $kbar in the frequency range of $20-3000 $cm$^{-1}$. The charge gap determined from the optical reflectivity is enhanced, $Δ_{ch}(p)/k_BT_{MI}(p)\sim 12$. This ratio is independent of pressure indicating that the character of the transition does not vary along the…
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The metal-insulator (MI) transition in BaVS$_3$ has been studied at ambient pressure and under hydrostatic pressure up to $p=26 $kbar in the frequency range of $20-3000 $cm$^{-1}$. The charge gap determined from the optical reflectivity is enhanced, $Δ_{ch}(p)/k_BT_{MI}(p)\sim 12$. This ratio is independent of pressure indicating that the character of the transition does not vary along the $p-T$ phase boundary. Above the critical pressure, $p_{cr}\sim20$ kbar, metallic spectra were recorded in the whole temperature range, as expected from the shape of the phase diagram. Our results exclude the opening of a pseudogap above $T_{MI}$ at any pressure. Below $T_{MI}$ an unusually strong temperature dependence of the charge gap was observed, resulting in a $Δ_{ch}(T)$ deviating strongly from the mean field-like variation of the structural order parameter.
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Submitted 17 November, 2003; v1 submitted 14 November, 2003;
originally announced November 2003.
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Quantum interference structures in the conductance plateaus of gold nanojunctions
Authors:
A. Halbritter,
Sz. Csonka,
G. Mihály,
O. I. Shklyarevskii,
S. Speller,
H. van Kempen
Abstract:
The conductance of breaking metallic nanojunctions shows plateaus alternated with sudden jumps, corresponding to the stretching of stable atomic configurations and atomic rearrangements, respectively. We investigate the structure of the conductance plateaus both by measuring the voltage dependence of the plateaus' slope on individual junctions and by a detailed statistical analysis on a large am…
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The conductance of breaking metallic nanojunctions shows plateaus alternated with sudden jumps, corresponding to the stretching of stable atomic configurations and atomic rearrangements, respectively. We investigate the structure of the conductance plateaus both by measuring the voltage dependence of the plateaus' slope on individual junctions and by a detailed statistical analysis on a large amount of contacts. Though the atomic discreteness of the junction plays a fundamental role in the evolution of the conductance, we find that the fine structure of the conductance plateaus is determined by quantum interference phenomenon to a great extent.
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Submitted 24 February, 2004; v1 submitted 3 November, 2003;
originally announced November 2003.
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Transition from tunneling to direct contact in tungsten nanojunctions
Authors:
A. Halbritter,
Sz. Csonka,
G. Mihaly,
E. Jurdik,
O. Yu. Kolesnychenko,
O. I. Shklyarevskii,
S. Speller,
H. van Kempen
Abstract:
We apply the mechanically controllable break junctions technique to investigate the transition from tunneling to direct contact in tungsten. This transition is quite different from that of other metals and is determined by the local electronic properties of the tungsten surface and the relief of the electrodes at the point of their closest proximity. The conductance traces show a rich variety of…
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We apply the mechanically controllable break junctions technique to investigate the transition from tunneling to direct contact in tungsten. This transition is quite different from that of other metals and is determined by the local electronic properties of the tungsten surface and the relief of the electrodes at the point of their closest proximity. The conductance traces show a rich variety of patterns from the avalanche-like jump to a mesoscopic contact to the completely smooth transition between direct contact and tunneling. Due to the occasional absence of an adhesive jump the conductance of the contact can be continuously monitored at ultra-small electrode separations. The conductance histograms of tungsten are either featureless or show two distinct peaks related to the sequential opening of spatially separated groups of conductance channels. The role of surface states of tungsten and their contribution to the junction conductance at sub-Angstrom electrode separations are discussed.
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Submitted 17 April, 2003;
originally announced April 2003.
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Pressure dependence of the thermoelectric power of single-walled carbon nanotubes
Authors:
N. Barisic,
R. Gaal,
I. Kezsmarki,
G. Mihaly,
L. Forro
Abstract:
We have measured the thermoelectric power (S) of high purity single-walled carbon nanotube mats as a function of temperature at various hydrostatic pressures up to 2.0 GPa. The thermoelectric power is positive, and it increases in a monotonic way with increasing temperature for all pressures. The low temperature (T < 40 K) linear thermoelectric power is pressure independent and is characteristic…
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We have measured the thermoelectric power (S) of high purity single-walled carbon nanotube mats as a function of temperature at various hydrostatic pressures up to 2.0 GPa. The thermoelectric power is positive, and it increases in a monotonic way with increasing temperature for all pressures. The low temperature (T < 40 K) linear thermoelectric power is pressure independent and is characteristic for metallic nanotubes. At higher temperatures it is enhanced and though S(T) is linear again above about 100 K it has a nonzero intercept. This enhancement is strongly pressure dependent and is related to the change of the phonon population with hydrostatic pressure.
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Submitted 6 March, 2002;
originally announced March 2002.
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Enhanced Granular Magnetoresistance due to Ferromagnetic Layers
Authors:
J. Balogh,
M. Csontos,
D. Kaptas,
G. Mihaly
Abstract:
Giant magnetoresistance (GMR) of sequentially evaporated Fe-Ag structures have been investigated. Direct experimental evidence is given that inserting ferromagnetic layers into a granular structure significantly enhances the magnetoresistance. The increase of the GMR effect is attributed to spin polarization effects. The large enhancement (up to more than a fourfold value) and the linear variati…
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Giant magnetoresistance (GMR) of sequentially evaporated Fe-Ag structures have been investigated. Direct experimental evidence is given that inserting ferromagnetic layers into a granular structure significantly enhances the magnetoresistance. The increase of the GMR effect is attributed to spin polarization effects. The large enhancement (up to more than a fourfold value) and the linear variation of the GMR in low magnetic fields are explained by scattering of the spin polarized conduction electrons on paramagnetic grains.
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Submitted 26 February, 2002;
originally announced February 2002.
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Connective neck evolution and conductance steps in hot point contacts
Authors:
A. Halbritter,
Sz. Csonka,
O. Yu. Kolesnychenko,
G. Mihaly,
O. I. Shklyarevskii,
H. van Kempen
Abstract:
Dynamic evolution of the connective neck in Al and Pb mechanically controllable break junctions was studied during continuous approach of electrodes at bias voltages V_b up to a few hundred mV. A high level of power dissipation (10^-4 - 10^-3 W) and high current density (j > 10^10 A/cm^2) in the constriction lead to overheating of the contact area, electromigration and current-enhanced diffusion…
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Dynamic evolution of the connective neck in Al and Pb mechanically controllable break junctions was studied during continuous approach of electrodes at bias voltages V_b up to a few hundred mV. A high level of power dissipation (10^-4 - 10^-3 W) and high current density (j > 10^10 A/cm^2) in the constriction lead to overheating of the contact area, electromigration and current-enhanced diffusion of atoms out of the "hot spot". At a low electrode approach rate (10 - 50 pm/s) the transverse dimension of the neck and the conductance of the junction depend on V_b and remain nearly constant over the approach distance of 10 - 30 nm. For V_b > 300 mV the connective neck consists of a few atoms only and the quantum nature of conductance manifests itself in abrupt steps and reversible jumps between two or more levels. These features are related to an ever changing number of individual conductance channels due to the continuous rearrangement in atomic configuration of the neck, the recurring motion of atoms between metastable states, the formation and breaking of isolated one-atom contacts and the switching between energetically preferable neck geometries.
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Submitted 10 December, 2001;
originally announced December 2001.
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Giant Magnetoresistance at the Interface of Iron Thin Films
Authors:
J. Balogh,
L. F. Kiss,
A. Halbritter,
I. Kézsmárki,
G. Mihály
Abstract:
Ag/Fe/Ag and Cr/Fe/Cr trilayers with a single $25 nm$ thick ferromagnetic layer exhibit giant magnetoresistance (GMR) type behavior. The resistance decreases for parallel and transversal magnetic field alignements with a Langevin-type magnetic field dependence up to B=12 T. The phenomenon is explained by a granular interface structure. Results on Fe/Ag multilayers are also interpreted in terms o…
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Ag/Fe/Ag and Cr/Fe/Cr trilayers with a single $25 nm$ thick ferromagnetic layer exhibit giant magnetoresistance (GMR) type behavior. The resistance decreases for parallel and transversal magnetic field alignements with a Langevin-type magnetic field dependence up to B=12 T. The phenomenon is explained by a granular interface structure. Results on Fe/Ag multilayers are also interpreted in terms of a granular interface magnetoresistance.
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Submitted 29 November, 2000;
originally announced November 2000.
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Pressure dependence of the spin gap in BaVS_3
Authors:
I. Kezsmarki,
Sz. Csonka,
H. Berger,
L. Forro,
P. Fazekas,
G. Mihaly
Abstract:
We carried out magnetotransport experiments under hydrostatic pressure in order to study the nature of the metal-insulator transition in BaVS$_3$. Scaling relations for $ρ(T,H,p)$ are established and the pressure dependence of the spin gap is determined. Our new results, in conjunction with a re-analysis of earlier specific heat and susceptibility data, demonstrate that the transition is weakly…
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We carried out magnetotransport experiments under hydrostatic pressure in order to study the nature of the metal-insulator transition in BaVS$_3$. Scaling relations for $ρ(T,H,p)$ are established and the pressure dependence of the spin gap is determined. Our new results, in conjunction with a re-analysis of earlier specific heat and susceptibility data, demonstrate that the transition is weakly second order. The nature of the phase diagram in the $T$--$p$--$H$ space is discussed.
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Submitted 11 September, 2000;
originally announced September 2000.
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Search for Magnetic Field Induced Gap in a High-Tc Superconductor
Authors:
G. Mihaly,
A. Halbritter,
L. Mihaly,
L. Forro
Abstract:
Break junctions made of the optimally doped high temperature superconductor Bi2Sr2Ca2CuO8 with Tc of 90 K has been investigated in magnetic fields up to 12 T, at temperatures from 4.2 K to Tc. The junction resistance varied between 1kOhm and 300kOhm. The differential conductance at low biases did not exhibit a significant magnetic field dependence, indicating that a magnetic-field-induced gap (K…
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Break junctions made of the optimally doped high temperature superconductor Bi2Sr2Ca2CuO8 with Tc of 90 K has been investigated in magnetic fields up to 12 T, at temperatures from 4.2 K to Tc. The junction resistance varied between 1kOhm and 300kOhm. The differential conductance at low biases did not exhibit a significant magnetic field dependence, indicating that a magnetic-field-induced gap (Krishana et al., Science 277 83 (1997)), if exists, must be smaller than 0.25 meV.
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Submitted 24 February, 2000;
originally announced February 2000.
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Hall effect and conduction anisotropy in the organic conductor TMTSF2PF6
Authors:
G. Mihaly,
I. Kezsmarki,
F. Zamborszky,
L. Forro
Abstract:
Long missing basic experiments in the normal phase of the anisotropic electron system of TMTSF2PF6 were performed. Both the Hall effect and the ab'-plane conduction anisotropy are directly addressing the unconventional electrical properties of this Bechgaard salt. We found that the dramatic reduction of the carrier density deduced from recent optical data is not reflected in an enhanced Hall-res…
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Long missing basic experiments in the normal phase of the anisotropic electron system of TMTSF2PF6 were performed. Both the Hall effect and the ab'-plane conduction anisotropy are directly addressing the unconventional electrical properties of this Bechgaard salt. We found that the dramatic reduction of the carrier density deduced from recent optical data is not reflected in an enhanced Hall-resistance. The pressure- and temperature dependence of the b'-direction resitivity reveal isotropic relaxation time and do not require explanations beyond the Fermi liquid theory. Our results allow a coherent-diffusive transition in the interchain carrier propagation, however the possible crossover to Luttinger liquid behavior is placed to an energy scale above room temperature.
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Submitted 27 January, 2000;
originally announced January 2000.
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Pressure Induced Quantum Critical Point and Non-Fermi-Liquid Behavior in BaVS3
Authors:
L. Forro,
R. Gaal,
H. Berger,
P. Fazekas,
K. Penc,
I. Kezsmarki,
G. Mihaly
Abstract:
The phase diagram of BaVS3 is studied under pressure using resistivity measurements. The temperature of the metal to nonmagnetic Mott insulator transition decreases under pressure, and vanishes at the quantum critical point p_cr=20kbar. We find two kinds of anomalous conducting states. The high-pressure metallic phase is a non-Fermi liquid described by Delta rho = T^n where n=1.2-1.3 at 1K < T <…
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The phase diagram of BaVS3 is studied under pressure using resistivity measurements. The temperature of the metal to nonmagnetic Mott insulator transition decreases under pressure, and vanishes at the quantum critical point p_cr=20kbar. We find two kinds of anomalous conducting states. The high-pressure metallic phase is a non-Fermi liquid described by Delta rho = T^n where n=1.2-1.3 at 1K < T < 60K. At p<p_cr, the transition is preceded by a wide precursor region with critically increasing resistivity which we ascribe to the opening of a soft Coulomb gap.
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Submitted 28 January, 2000; v1 submitted 25 January, 2000;
originally announced January 2000.
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Transport properties and point contact spectra of Ni_xNb_{1-x} metallic glasses
Authors:
A. Halbritter,
O. Yu. Kolesnychenko,
G. Mihaly,
O. I. Shklyarevskii,
H. van Kempen
Abstract:
Bulk resistivity and point contact spectra of Ni_xNb_{1-x} metallic glasses have been investigated as functions of temperature (0.3-300K) and magnetic field (0-12T). Metallic glasses in this family undergo a superconducting phase transition determined by the Nb concentration. When superconductivity was suppressed by a strong magnetic field, both the bulk sample R(T) and the point contact differe…
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Bulk resistivity and point contact spectra of Ni_xNb_{1-x} metallic glasses have been investigated as functions of temperature (0.3-300K) and magnetic field (0-12T). Metallic glasses in this family undergo a superconducting phase transition determined by the Nb concentration. When superconductivity was suppressed by a strong magnetic field, both the bulk sample R(T) and the point contact differential resistance curves of Ni_xNb_{1-x} showed logarithmic behavior at low energies, which is explained by a strong electron - "two level system" coupling. We studied the temperature, magnetic field and contact resistance dependence of Ni_{44}Nb_{56} point-contact spectra in the superconducting state and found telegraph-like fluctuations superimposed on superconducting characteristics. These R(V) characteristics are extremely sensitive detectors for slow relaxing "two level system" motion.
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Submitted 1 February, 2000; v1 submitted 10 January, 2000;
originally announced January 2000.
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Orbitally Driven Spin Pairing in the 3D Non-Magnetic Mott Insulator BaVS3: Evidence from Single Crystal Studies
Authors:
G. Mihaly,
I. Kezsmarki,
F. Zamborszky,
M. Miljak,
K. Penc,
P. Fazekas,
H. Berger,
L. Forro
Abstract:
Static electrical and magnetic properties of single crystal BaVS_3 were measured over the structural (T_S=240K), metal-insulator (T_MI=69K), and suspected orbital ordering (T_X=30K) transitions. The resistivity is almost isotropic both in the metallic and insulating states. An anomaly in the magnetic anisotropy at T_X signals a phase transition to an ordered low-T state. The results are interpre…
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Static electrical and magnetic properties of single crystal BaVS_3 were measured over the structural (T_S=240K), metal-insulator (T_MI=69K), and suspected orbital ordering (T_X=30K) transitions. The resistivity is almost isotropic both in the metallic and insulating states. An anomaly in the magnetic anisotropy at T_X signals a phase transition to an ordered low-T state. The results are interpreted in terms of orbital ordering and spin pairing within the lowest crystal field quasi-doublet. The disordered insulator at T_X<T<T_MI is described as a classical liquid of non-magnetic pairs.
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Submitted 28 January, 2000; v1 submitted 9 November, 1999;
originally announced November 1999.
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Energy gap in superconducting fullerides: optical and tunneling studies
Authors:
Daniel Koller,
Michael C. Martin,
Laszlo Mihaly,
Gyorgy Mihaly,
Gabor Oszlanyi,
Gabriel Baumgartner,
Laszlo Forro
Abstract:
Tunneling and optical transmission studies have been performed on superconducting samples of Rb3C60. At temperatures much below the superconducting transition temperature Tc the energy gap is 2 Delta=5.2 +- 0.2meV, corresponding to 2 Delta/kB Tc = 4.2. The low temperature density of states, and the temperature dependence of the optical conductivity resembles the BCS behavior, although there is a…
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Tunneling and optical transmission studies have been performed on superconducting samples of Rb3C60. At temperatures much below the superconducting transition temperature Tc the energy gap is 2 Delta=5.2 +- 0.2meV, corresponding to 2 Delta/kB Tc = 4.2. The low temperature density of states, and the temperature dependence of the optical conductivity resembles the BCS behavior, although there is an enhanced ``normal state" contribution. The results indicate that this fulleride material is an s-wave superconductor, but the superconductivity cannot be described in the weak coupling limit.
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Submitted 27 September, 1996;
originally announced September 1996.