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Tip-induced creation and Jahn-Teller distortions of sulfur vacancies in single-layer MoS$_{2}$
Authors:
Daniel Jansen,
Tfyeche Tounsi,
Jeison Fischer,
Arkady V. Krasheninnikov,
Thomas Michely,
Hannu-Pekka Komsa,
Wouter Jolie
Abstract:
We present an atomically precise technique to create sulfur vacancies and control their atomic configurations in single-layer MoS$_{2}$. It involves adsorbed Fe atoms and the tip of a scanning tunneling microscope, which enables single sulfur removal from the top sulfur layer at the initial position of Fe. Using scanning tunneling spectroscopy, we show that the STM tip can also induce two Jahn-Tel…
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We present an atomically precise technique to create sulfur vacancies and control their atomic configurations in single-layer MoS$_{2}$. It involves adsorbed Fe atoms and the tip of a scanning tunneling microscope, which enables single sulfur removal from the top sulfur layer at the initial position of Fe. Using scanning tunneling spectroscopy, we show that the STM tip can also induce two Jahn-Teller distorted states with reduced orbital symmetry in the sulfur vacancies. Density functional theory calculations rationalize our experimental results. Additionally, we provide evidence for molecule-like hybrid orbitals in artificially created sulfur vacancy dimers, which illustrates the potential of our technique for the development of extended defect lattices and tailored electronic band structures.
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Submitted 26 March, 2024; v1 submitted 18 January, 2024;
originally announced January 2024.
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Unidirectional Nano-Modulated Binding and Electron Scattering in Epitaxial Borophene
Authors:
Sherif Kamal,
Insung Seo,
Pantelis Bampoulis,
Matteo Jugovac,
Carlo Alberto Brondin,
Tevfik Onur Menteş,
Iva Šarić Janković,
Andrey V. Matetskiy,
Paolo Moras,
Polina M. Sheverdyaeva,
Thomas Michely,
Andrea Locatelli,
Yoshihiro Gohda,
Marko Kralj,
Marin Petrović
Abstract:
A complex interplay between the crystal structure and electron behavior within borophene renders this material an intriguing 2D system with many of its electronic properties still undiscovered. Experimental insight into those properties is additionally hampered by the limited capabilities of the established synthesis methods, which in turn inhibits the realization of potential borophene applicatio…
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A complex interplay between the crystal structure and electron behavior within borophene renders this material an intriguing 2D system with many of its electronic properties still undiscovered. Experimental insight into those properties is additionally hampered by the limited capabilities of the established synthesis methods, which in turn inhibits the realization of potential borophene applications. In this multi-method study, photoemission spectroscopies and scanning probe techniques complemented by theoretical calculations have been used to investigate the electronic characteristics of a high-coverage, single-layer borophene on Ir(111) substrate. Our results show that the binding of borophene to Ir(111) exhibits pronounced one-dimensional modulation and transforms borophene into a nano-grating. The scattering of photoelectrons from this structural grating gives rise to the replication of electronic bands. In addition, the binding modulation is reflected in the chemical reactivity of borophene and gives rise to its inhomogeneous aging effect. Such aging is easily reset by dissolving boron atoms in iridium at high temperature followed by their reassembly into a fresh atomically-thin borophene mesh. Besides proving electron-grating capabilities of the boron monolayer, our data provides a comprehensive insight into the electronic properties of epitaxial borophene which is vital for further examination of other boron systems of reduced dimensionality.
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Submitted 4 December, 2023;
originally announced December 2023.
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Growth of aligned and twisted hexagonal boron nitride on Ir(110)
Authors:
Thomas Michely,
Jason Bergelt,
Affan Safeer,
Alexander Bäder,
Tobias Hartl,
Jeison Fischer
Abstract:
The growth of monolayer hexagonal boron nitride (h-BN) on Ir(110) through low-pressure chemical vapor deposition is investigated using low energy electron diffraction and scanning tunneling microscopy. We find that the growth of aligned single hexagonal boron nitride on Ir(110) requires a growth temperature of 1500 K, whereas lower growth temperatures result in coexistence of aligned h-BN with twi…
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The growth of monolayer hexagonal boron nitride (h-BN) on Ir(110) through low-pressure chemical vapor deposition is investigated using low energy electron diffraction and scanning tunneling microscopy. We find that the growth of aligned single hexagonal boron nitride on Ir(110) requires a growth temperature of 1500 K, whereas lower growth temperatures result in coexistence of aligned h-BN with twisted h-BN The presence of the h-BN overlayer suppresses the formation of the nano-faceted ridge pattern known from clean Ir(110). Instead, we observe the formation of a (1 $\times$ n) reconstruction, with n such that the missing rows are in registry with the h-BN/Ir(110) moiré pattern. Our moiré analysis showcases a precise methodology for determining both the moiré periodicity and the h-BN lattice parameter on an fcc(110) surface.
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Submitted 11 August, 2023;
originally announced August 2023.
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Unconventional charge-density-wave gap in monolayer NbS$_2$
Authors:
Timo Knispel,
Jan Berges,
Arne Schobert,
Erik G. C. P. van Loon,
Wouter Jolie,
Tim Wehling,
Thomas Michely,
Jeison Fischer
Abstract:
Using scanning tunneling microscopy and spectroscopy, for a monolayer of transition metal dichalcogenide H-NbS$_2$ grown by molecular beam epitaxy on graphene, we provide unambiguous evidence for a charge density wave (CDW) with a 3$\times$3 superstructure, which is not present in bulk NbS$_2$. Local spectroscopy displays a pronounced gap of the order of 20 meV at the Fermi level. Within the gap l…
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Using scanning tunneling microscopy and spectroscopy, for a monolayer of transition metal dichalcogenide H-NbS$_2$ grown by molecular beam epitaxy on graphene, we provide unambiguous evidence for a charge density wave (CDW) with a 3$\times$3 superstructure, which is not present in bulk NbS$_2$. Local spectroscopy displays a pronounced gap of the order of 20 meV at the Fermi level. Within the gap low energy features are present. The gap structure with its low energy features is at variance with the expectation for a gap opening in the electronic band structure due to a CDW. Instead, comparison with \it{ab initio} calculations indicates that the observed gap structure must be attributed to combined electron-phonon quasiparticles. The phonons in question are the elusive amplitude and phase collective modes of the CDW transition. Our findings advance the understanding of CDW mechanisms in two dimensional materials and their spectroscopic signatures.
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Submitted 25 July, 2023;
originally announced July 2023.
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Novel 2D vanadium sulphides: synthesis, atomic structure engineering and charge density waves
Authors:
Camiel van Efferen,
Joshua Hall,
Nicolae Atodiresei,
Virgínia Boix,
Affan Safeer,
Tobias Wekking,
Nikolay Vinogradov,
Alexei Preobrajensk,
Jan Knudsen,
Jeison Fischer,
Wouter Jolie,
Thomas Michely
Abstract:
Two new ultimately thin vanadium rich 2D materials based on VS2 are created via molecular beam epitaxy and investigated using scanning tunneling microscopy, X-ray photoemission spectroscopy and density-functional theory calculations. The controlled synthesis of stoichiometric single-layer VS2 or either of the two vanadium-rich materials is achieved by varying the sample coverage and the sulphur pr…
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Two new ultimately thin vanadium rich 2D materials based on VS2 are created via molecular beam epitaxy and investigated using scanning tunneling microscopy, X-ray photoemission spectroscopy and density-functional theory calculations. The controlled synthesis of stoichiometric single-layer VS2 or either of the two vanadium-rich materials is achieved by varying the sample coverage and the sulphur pressure during annealing. Through annealing of small stoichiometric single-layer VS2 islands without S pressure, S-vacancies spontaneously order in 1D arrays, giving rise to patterned adsorption. Via the comparison of density-functional theory calculations with scanning tunneling microscopy data, the atomic structure of the S-depleted phase, with a stoichiometry of V4S7, is determined. By depositing larger amounts of vanadium and sulphur, which are subsequently annealed in a S-rich atmosphere, self-intercalated ultimately thin V5S8-derived layers are obtained, which host 2x2 V-layers between sheets of VS2. We provide atomic models for the thinnest V5S8-derived structures. Finally, we use scanning tunneling spectroscopy to investigate the charge density wave observed in the 2D V5S8-derived islands.
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Submitted 13 February, 2024; v1 submitted 29 June, 2023;
originally announced June 2023.
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Modulated Kondo screening along magnetic mirror twin boundaries in monolayer MoS2 on graphene
Authors:
Camiel van Efferen,
Jeison Fischer,
Theo A. Costi,
Achim Rosch,
Thomas Michely,
Wouter Jolie
Abstract:
A many-body resonance emerges at the Fermi energy when an electron bath screens the magnetic moment of a half-filled impurity level. This Kondo effect, originally introduced to explain the abnormal resistivity behavior in bulk magnetic alloys, has been realized in many quantum systems over the past decades, such as quantum dots, quantum point contacts, nanowires, single-molecule transistors, heavy…
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A many-body resonance emerges at the Fermi energy when an electron bath screens the magnetic moment of a half-filled impurity level. This Kondo effect, originally introduced to explain the abnormal resistivity behavior in bulk magnetic alloys, has been realized in many quantum systems over the past decades, such as quantum dots, quantum point contacts, nanowires, single-molecule transistors, heavy-fermion lattices, down to adsorbed single atoms. Here we describe a unique Kondo system which allows us to experimentally resolve the spectral function consisting of impurity levels and Kondo resonance in a large Kondo temperature range, as well as their spatial modulation. Our experimental Kondo system, based on a discrete half-filled quantum confined state within a MoS2 grain boundary, in conjunction with numerical renormalization group calculations, enables us to test the predictive power of the Anderson model which is the basis of the microscopic understanding of Kondo physics.
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Submitted 8 May, 2023; v1 submitted 18 October, 2022;
originally announced October 2022.
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Metal-insulator transition in monolayer MoS$_2$ via contactless chemical do**
Authors:
Camiel van Efferen,
Clifford Murray,
Jeison Fischer,
Carsten Busse,
Hannu-Pekka Komsa,
Thomas Michely,
Wouter Jolie
Abstract:
Much effort has been made to modify the properties of transition metal dichalcogenide layers via their environment as a route to new functionalization. However, it remains a challenge to induce large electronic changes without chemically altering the layer or compromising its two-dimensionality. Here, a non-invasive technique is used to shift the chemical potential of monolayer MoS$_2$ through p-…
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Much effort has been made to modify the properties of transition metal dichalcogenide layers via their environment as a route to new functionalization. However, it remains a challenge to induce large electronic changes without chemically altering the layer or compromising its two-dimensionality. Here, a non-invasive technique is used to shift the chemical potential of monolayer MoS$_2$ through p- and n-type do** of graphene (Gr), which remains a well-decoupled 2D substrate. With the intercalation of oxygen (O) under Gr, a nearly rigid Fermi level shift of 0.45 eV in MoS$_2$ is demonstrated, whereas the intercalation of europium (Eu) induces a metal-insulator transition in MoS$_2$, accompanied by a giant band gap reduction of 0.67 eV. Additionally, the effect of the substrate charge on 1D states within MoS$_2$ mirror-twin boundaries (MTBs) is explored. It is found that the 1D nature of the MTB states is not compromised, even when MoS$_2$ is made metallic. Furthermore, with the periodicity of the 1D states dependent on substrate-induced charging and depletion, the boundaries serve as chemical potential sensors functional up to room temperature.
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Submitted 9 December, 2021;
originally announced December 2021.
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Single-crystal graphene on Ir(110)
Authors:
Stefan Kraus,
Felix Huttmann,
Jeison Fischer,
Timo Knispel,
Ken Bischof,
Alexander Herman,
Marco Bianchi,
Raluca-Maria Stan,
Ann Julie Holt,
Vasile Caciuc,
Shigeru Tsukamoto,
Heiko Wende,
Philip Hofmann,
Nicolae Atodiresei,
Thomas Michely
Abstract:
A single-crystal sheet of graphene is synthesized on the low-symmetry substrate Ir(110) by thermal decomposition of C$_2$H$_4$ at 1500 K. Using scanning tunneling microscopy, low-energy electron diffraction, angle-resolved photoemission spectroscopy, and ab initio density functional theory the structure and electronic properties of the adsorbed graphene sheet and its moiré with the substrate are u…
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A single-crystal sheet of graphene is synthesized on the low-symmetry substrate Ir(110) by thermal decomposition of C$_2$H$_4$ at 1500 K. Using scanning tunneling microscopy, low-energy electron diffraction, angle-resolved photoemission spectroscopy, and ab initio density functional theory the structure and electronic properties of the adsorbed graphene sheet and its moiré with the substrate are uncovered. The adsorbed graphene layer forms a wave pattern of nm wave length with a corresponding modulation of its electronic properties. This wave pattern is demonstrated to enable the templated adsorption of aromatic molecules and the uniaxial growth of organometallic wires. Not limited to this, graphene on Ir(110) is also a versatile substrate for 2D-layer growth and makes it possible to grow epitaxial layers on ureconstructed Ir(110).
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Submitted 9 September, 2021;
originally announced September 2021.
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A full gap above the Fermi level: the charge density wave of monolayer VS2
Authors:
Camiel van Efferen,
Jan Berges,
Joshua Hall,
Erik van Loon,
Stefan Kraus,
Arne Schobert,
Tobias Wekking,
Felix Huttmann,
Eline Plaar,
Nico Rothenbach,
Katharina Ollefs,
Lucas Machado Arruda,
Nick Brookes,
Gunnar Schoenhoff,
Kurt Kummer,
Heiko Wende,
Tim Wehling,
Thomas Michely
Abstract:
In the standard model of charge density wave (CDW) transitions, the displacement along a single phonon mode lowers the total electronic energy by creating a gap at the Fermi level, making the CDW a metal--insulator transition. Here, using scanning tunneling microscopy and spectroscopy and ab initio calculations, we show that VS$_2$ realizes a CDW which stands out of this standard model. There is a…
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In the standard model of charge density wave (CDW) transitions, the displacement along a single phonon mode lowers the total electronic energy by creating a gap at the Fermi level, making the CDW a metal--insulator transition. Here, using scanning tunneling microscopy and spectroscopy and ab initio calculations, we show that VS$_2$ realizes a CDW which stands out of this standard model. There is a full CDW gap residing in the unoccupied states of monolayer VS$_2$. At the Fermi level, the CDW induces a topological metal-metal (Lifshitz) transition. Non-linear coupling of transverse and longitudinal phonons is essential for the formation of the CDW and the full gap above the Fermi level. Additionally, x-ray magnetic circular dichroism reveals the absence of net magnetization in this phase, pointing to coexisting charge and spin density waves in the ground state.
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Submitted 8 September, 2021; v1 submitted 4 January, 2021;
originally announced January 2021.
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Band Bending and Valence Band Quantization at Line Defects in MoS$_2$
Authors:
Clifford Murray,
Camiel van Efferen,
Wouter Jolie,
Jeison Antonio Fischer,
Joshua Hall,
Achim Rosch,
Arkady V. Krasheninnikov,
Hannu-Pekka Komsa,
Thomas Michely
Abstract:
The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS$_2$, grown by molecular beam epitaxy, is investigated through high resolution scanning tunneling spectroscopy at $5$K. Strong upwards bending of valence and conduction bands towards the line defects is found for the 4|4E mirror twin boundary and island edges, but not for the 4|4P mirror twin boundary. Quantize…
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The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS$_2$, grown by molecular beam epitaxy, is investigated through high resolution scanning tunneling spectroscopy at $5$K. Strong upwards bending of valence and conduction bands towards the line defects is found for the 4|4E mirror twin boundary and island edges, but not for the 4|4P mirror twin boundary. Quantized energy levels in the valence band are observed wherever upwards band bending takes place. Focusing on the common 4|4E mirror twin boundary, density functional theory calculations give an estimate of its charging, which agrees well with electrostatic modeling. We show that the line charge can also be assessed from the filling of the boundary-localized electronic band, whereby we provide a measurement of the theoretically predicted quantized polarization charge at MoS$_2$ mirror twin boundaries. These calculations elucidate the origin of band bending and charging at these 1D defects in MoS$_2$. The 4|4E mirror twin boundary not only impairs charge transport of electrons and holes due to band bending, but holes are additionally subject to a potential barrier, which is inferred from the independence of the quantized energy landscape on either side of the boundary.
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Submitted 13 July, 2020;
originally announced July 2020.
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Tomonaga-Luttinger liquid in a box: electrons confined within MoS$_2$ mirror twin boundaries
Authors:
Wouter Jolie,
Clifford Murray,
Philipp S. Weiß,
Joshua Hall,
Fabian Portner,
Nicolae Atodiresei,
Arkady V. Krasheninnikov,
Carsten Busse,
Hannu-Pekka Komsa,
Achim Rosch,
Thomas Michely
Abstract:
Two- or three-dimensional metals are usually well described by weakly interacting, fermionic quasiparticles. This concept breaks down in one dimension due to strong Coulomb interactions. There, low-energy electronic excitations are expected to be bosonic collective modes, which fractionalize into independent spin and charge density waves. Experimental research on one-dimensional metals is still ha…
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Two- or three-dimensional metals are usually well described by weakly interacting, fermionic quasiparticles. This concept breaks down in one dimension due to strong Coulomb interactions. There, low-energy electronic excitations are expected to be bosonic collective modes, which fractionalize into independent spin and charge density waves. Experimental research on one-dimensional metals is still hampered by their difficult realization, their limited accessibility to measurements, and by competing or obscuring effects such as Peierls distortions or zero bias anomalies. Here we overcome these difficulties by constructing a well-isolated, one-dimensional metal of finite length present in MoS$_2$ mirror twin boundaries. Using scanning tunneling spectroscopy we measure the single-particle density of the interacting electron system as a function of energy and position in the 1D box. Comparison to theoretical modeling provides unambiguous evidence that we are observing spin-charge separation in real space.
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Submitted 21 March, 2019;
originally announced March 2019.
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Comprehensive tunneling spectroscopy of quasi-freestanding MoS$_2$ on graphene on Ir(111)
Authors:
Clifford Murray,
Wouter Jolie,
Jeison A. Fischer,
Joshua Hall,
Camiel van Efferen,
Niels Ehlen,
Alexander Grüneis,
Carsten Busse,
Thomas Michely
Abstract:
We apply scanning tunneling spectroscopy to determine the bandgaps of mono-, bi- and trilayer MoS$_2$ grown on a graphene single crystal on Ir(111). Besides the typical scanning tunneling spectroscopy at constant height, we employ two additional spectroscopic methods giving extra sensitivity and qualitative insight into the $k$-vector of the tunneling electrons. Employing this comprehensive set of…
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We apply scanning tunneling spectroscopy to determine the bandgaps of mono-, bi- and trilayer MoS$_2$ grown on a graphene single crystal on Ir(111). Besides the typical scanning tunneling spectroscopy at constant height, we employ two additional spectroscopic methods giving extra sensitivity and qualitative insight into the $k$-vector of the tunneling electrons. Employing this comprehensive set of spectroscopic methods in tandem, we deduce a bandgap of $2.53\pm0.08$ eV for the monolayer. This is close to the predicted values for freestanding MoS$_2$ and larger than is measured for MoS$_2$ on other substrates. Through precise analysis of the `comprehensive' tunneling spectroscopy we also identify critical point energies in the mono- and bilayer MoS$_2$ band structures. These compare well with their calculated freestanding equivalents, evidencing the graphene/Ir(111) substrate as an excellent environment upon which to study the many feted electronic phenomena of monolayer MoS$_2$ and similar materials. Additionally, this investigation serves to expand the fledgling field of the comprehensive tunneling spectroscopy technique itself.
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Submitted 20 March, 2019;
originally announced March 2019.
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Narrow photoluminescence peak of epitaxial MoS$_2$ on graphene/Ir(111)
Authors:
Niels Ehlen,
Joshua Hall,
Boris V. Senkovskiy,
Martin Hell,
Jun Li,
d Alexander Herman,
Dmitry Smirnov,
Alexander Fedorov,
Vladimir Yu. Voroshnin,
Giovanni di Santo,
Luca Petaccia,
Thomas Michely,
Alexander Grüneis
Abstract:
We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS$_2$ on graphene/Ir(111). This observation is explained in terms of a weak graphene-MoS$_2$ interaction that prevents PL quenching expected for a metallic substrate. The weak interaction of MoS$_2$ with the graphene is highlighted by angle-resolved photoemission spectroscopy…
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We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS$_2$ on graphene/Ir(111). This observation is explained in terms of a weak graphene-MoS$_2$ interaction that prevents PL quenching expected for a metallic substrate. The weak interaction of MoS$_2$ with the graphene is highlighted by angle-resolved photoemission spectroscopy and temperature dependent Raman spectroscopy. These methods reveal that there is no hybridization between electronic states of graphene and MoS$_2$ and a different thermal expansion of graphene and MoS$_2$. Molecular beam epitaxy grown MoS2 on graphene is therefore an important platform for optoelectronics which allows for large area growth with controlled properties.
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Submitted 6 September, 2018;
originally announced September 2018.
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Charge puddles in the bulk and on the surface of the topological insulator BiSbTeSe$_2$ studied by scanning tunneling microscopy and optical spectroscopy
Authors:
T. Knispel,
W. Jolie,
N. Borgwardt,
J. Lux,
Zhiwei Wang,
Yoichi Ando,
A. Rosch,
T. Michely,
M. Grüninger
Abstract:
The topological insulator BiSbTeSe$_2$ corresponds to a compensated semiconductor in which strong Coulomb disorder gives rise to the formation of charge puddles, i.e., local accumulations of charge carriers, both in the bulk and on the surface. Bulk puddles are formed if the fluctuations of the Coulomb potential are as large as half of the band gap. The gapless surface, in contrast, is sensitive t…
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The topological insulator BiSbTeSe$_2$ corresponds to a compensated semiconductor in which strong Coulomb disorder gives rise to the formation of charge puddles, i.e., local accumulations of charge carriers, both in the bulk and on the surface. Bulk puddles are formed if the fluctuations of the Coulomb potential are as large as half of the band gap. The gapless surface, in contrast, is sensitive to small fluctuations but the potential is strongly suppressed due to the additional screening channel provided by metallic surface carriers. To study the quantitative relationship between the properties of bulk puddles and surface puddles, we performed infrared transmittance measurements as well as scanning tunneling microscopy measurements on the same sample of BiSbTeSe$_2$, which is close to perfect compensation. At 5.5 K, we find surface potential fluctuations occurring on a length scale $r_s = 40-50$ nm with amplitude $Γ= 8-14$ meV which is much smaller than in the bulk, where optical measurements detect the formation of bulk puddles. In this nominally undoped compound, the value of $Γ$ is smaller than expected for pure screening by surface carriers, and we argue that this arises most likely from a cooperative effect of bulk screening and surface screening.
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Submitted 30 August, 2017;
originally announced August 2017.
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Tuning the van der Waals Interaction of Graphene with Molecules via Do**
Authors:
Felix Huttmann,
Antonio J. Martínez-Galera,
Vasile Caciuc,
Nicolae Atodiresei,
Stefan Schumacher,
Sebastian Standop,
Ikutaro Hamada,
Tim O. Wehling,
Stefan Blügel,
Thomas Michely
Abstract:
We use scanning tunneling microscopy to visualize and thermal desorption spectroscopy to quantitatively measure that the binding of naphthalene molecules to graphene (Gr), a case of pure van der Waals (vdW) interaction, strengthens with $n$- and weakens with $p$-do** of Gr. Density functional theory calculations that include the vdW interaction in a seamless, ab initio way accurately reproduce t…
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We use scanning tunneling microscopy to visualize and thermal desorption spectroscopy to quantitatively measure that the binding of naphthalene molecules to graphene (Gr), a case of pure van der Waals (vdW) interaction, strengthens with $n$- and weakens with $p$-do** of Gr. Density functional theory calculations that include the vdW interaction in a seamless, ab initio way accurately reproduce the observed trend in binding energies. Based on a model calculation, we propose that the vdW interaction is modified by changing the spatial extent of Gr's $π$ orbitals via do**.
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Submitted 7 September, 2015;
originally announced September 2015.
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Xe Irradiation of Graphene on Ir(111): From Trap** to Blistering
Authors:
Charlotte Herbig,
E. Harriet Åhlgren,
Ulrike A. Schröder,
Antonio J. Martínez-Galera,
Mohammad A. Arman,
Jani Kotakoski,
Jan Knudsen,
Arkady V. Krasheninnikov,
Thomas Michely
Abstract:
Using X-ray photoelectron spectroscopy, thermal desorption spectroscopy, and scanning tunneling microscopy we show that upon keV Xe + irradiation of graphene on Ir(111), Xe atoms are trapped under the graphene. Upon annealing, aggregation of Xe leads to graphene bulges and blisters. The efficient trap** is an unexpected and remarkable phenomenon, given the absence of chemical binding of Xe to Ir…
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Using X-ray photoelectron spectroscopy, thermal desorption spectroscopy, and scanning tunneling microscopy we show that upon keV Xe + irradiation of graphene on Ir(111), Xe atoms are trapped under the graphene. Upon annealing, aggregation of Xe leads to graphene bulges and blisters. The efficient trap** is an unexpected and remarkable phenomenon, given the absence of chemical binding of Xe to Ir and to graphene, the weak interaction of a perfect graphene layer with Ir(111), as well as the substantial damage to graphene due to irradiation. By combining molecular dynamics simulations and density functional theory calculations with our experiments, we uncover the mechanism of trap**. We describe ways to avoid blister formation during graphene growth, and also demonstrate how ion implantation can be used to intentionally create blisters without introducing damage to the graphene layer. Our approach may provide a pathway to synthesize new materials at a substrate - 2D material interface or to enable confined reactions at high pressures and temperatures.
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Submitted 12 August, 2015;
originally announced August 2015.
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Europium Underneath Graphene on Ir(111): Intercalation Mechanism, Magnetism, and Band Structure
Authors:
Stefan Schumacher,
Felix Huttmann,
Marin Petrović,
Christian Witt,
Daniel F. Förster,
Chi Vo-Van,
Johann Coraux,
Antonio J. Martínez-Galera,
Violetta Sessi,
Ignacio Vergara,
Reinhard Rückamp,
Markus Grüninger,
Nicolas Schleheck,
Frank Meyer zu Heringdorf,
Philippe Ohresser,
Marko Kralj,
Tim O. Wehling,
Thomas Michely
Abstract:
The intercalation of Eu underneath Gr on Ir(111) is comprehensively investigated by microscopic, magnetic, and spectroscopic measurements, as well as by density functional theory. Depending on the coverage, the intercalated Eu atoms form either a $(2 \times 2)$ or a $(\sqrt{3} \times \sqrt{3})$R$30^{\circ}$ superstructure with respect to Gr. We investigate the mechanisms of Eu penetration through…
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The intercalation of Eu underneath Gr on Ir(111) is comprehensively investigated by microscopic, magnetic, and spectroscopic measurements, as well as by density functional theory. Depending on the coverage, the intercalated Eu atoms form either a $(2 \times 2)$ or a $(\sqrt{3} \times \sqrt{3})$R$30^{\circ}$ superstructure with respect to Gr. We investigate the mechanisms of Eu penetration through a nominally closed Gr sheet and measure the electronic structures and magnetic properties of the two intercalation systems. Their electronic structures are rather similar. Compared to Gr on Ir(111), the Gr bands in both systems are essentially rigidly shifted to larger binding energies resulting in n-do**. The hybridization of the Ir surface state $S_1$ with Gr states is lifted, and the moire superperiodic potential is strongly reduced. In contrast, the magnetic behavior of the two intercalation systems differs substantially as found by X-ray magnetic circular dichroism. The $(2 \times 2)$ Eu structure displays plain paramagnetic behavior, whereas for the $(\sqrt{3} \times \sqrt{3})$R$30^{\circ}$ structure the large zero-field susceptibility indicates ferromagnetic coupling, despite the absence of hysteresis at 10 K. For the latter structure, a considerable easy-plane magnetic anisotropy is observed and interpreted as shape anisotropy.
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Submitted 18 September, 2014; v1 submitted 15 September, 2014;
originally announced September 2014.
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The mechanism of caesium intercalation of graphene
Authors:
M. Petrovic,
I. Srut Rakic,
S. Runte,
C. Busse,
J. T. Sadowski,
P. Lazic,
I. Pletikosic,
Z. -H. Pan,
M. Milun,
P. Pervan,
N. Atodiresei,
R. Brako,
D. Sokcevic,
T. Valla,
T. Michely,
M. Kralj
Abstract:
Properties of many layered materials, including copper- and iron-based superconductors, topological insulators, graphite and epitaxial graphene can be manipulated by inclusion of different atomic and molecular species between the layers via a process known as intercalation. For example, intercalation in graphite can lead to superconductivity and is crucial in the working cycle of modern batteries…
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Properties of many layered materials, including copper- and iron-based superconductors, topological insulators, graphite and epitaxial graphene can be manipulated by inclusion of different atomic and molecular species between the layers via a process known as intercalation. For example, intercalation in graphite can lead to superconductivity and is crucial in the working cycle of modern batteries and supercapacitors. Intercalation involves complex diffusion processes along and across the layers, but the microscopic mechanisms and dynamics of these processes are not well understood. Here we report on a novel mechanism for intercalation and entrapment of alkali-atoms under epitaxial graphene. We find that the intercalation is adjusted by the van der Waals interaction, with the dynamics governed by defects anchored to graphene wrinkles. Our findings are relevant for the future design and application of graphene-based nano-structures. Similar mechanisms can also play a role for intercalation of layered materials.
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Submitted 18 November, 2013; v1 submitted 15 November, 2013;
originally announced November 2013.
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Map** Image Potential States on Graphene Quantum Dots
Authors:
Fabian Craes,
Sven Runte,
Jürgen Klinkhammer,
Marko Kralj,
Thomas Michely,
Carsten Busse
Abstract:
Free electron like image potential states are observed in scanning tunneling spectroscopy on graphene quantum dots on Ir(111) acting as potential wells. The spectrum strongly depends on the size of the nanostructure as well as on the spatial position on top, indicating lateral confinement. Analysis of the substructure of the first state by spatial map** of constant energy local density of states…
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Free electron like image potential states are observed in scanning tunneling spectroscopy on graphene quantum dots on Ir(111) acting as potential wells. The spectrum strongly depends on the size of the nanostructure as well as on the spatial position on top, indicating lateral confinement. Analysis of the substructure of the first state by spatial map** of constant energy local density of states reveals characteristic patterns of confined states. The most pronounced state is not the ground state, but an excited state with a favorable combination of local density of states and parallel momentum transfer in the tunneling process. Chemical gating tunes the confining potential by changing the local workfunction. Our experimental determination of this workfunction allows to deduce the associated shift of the Dirac point.
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Submitted 14 June, 2013; v1 submitted 7 March, 2013;
originally announced March 2013.
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Strong anisotropy in surface kinetic roughening: analysis and experiments
Authors:
Edoardo Vivo,
Matteo Nicoli,
Martin Engler,
Thomas Michely,
Luis Vázquez,
Rodolfo Cuerno
Abstract:
We report an experimental assessment of surface kinetic roughening properties that are anisotropic in space. Working for two specific instances of silicon surfaces irradiated by ion-beam sputtering under diverse conditions (with and without concurrent metallic impurity codeposition), we verify the predictions and consistency of a recently proposed scaling Ansatz for surface observables like the tw…
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We report an experimental assessment of surface kinetic roughening properties that are anisotropic in space. Working for two specific instances of silicon surfaces irradiated by ion-beam sputtering under diverse conditions (with and without concurrent metallic impurity codeposition), we verify the predictions and consistency of a recently proposed scaling Ansatz for surface observables like the two-dimensional (2D) height Power Spectral Density (PSD). In contrast with other formulations, this Ansatz is naturally tailored to the study of two-dimensional surfaces, and allows to readily explore the implications of anisotropic scaling for other observables, such as real-space correlation functions and PSD functions for 1D profiles of the surface. Our results confirm that there are indeed actual experimental systems whose kinetic roughening is strongly anisotropic, as consistently described by this scaling analysis. In the light of our work, some types of experimental measurements are seen to be more affected by issues like finite space resolution effects, etc. that may hinder a clear-cut assessment of strongly anisotropic scaling in the present and other practical contexts.
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Submitted 20 December, 2012; v1 submitted 10 September, 2012;
originally announced September 2012.
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Magnetism of cobalt nanoclusters on graphene on iridium
Authors:
Chi Vo-Van,
Stefan Schumacher,
Johann Coraux,
Violetta Sessi,
Olivier Fruchart,
Nick B. Brookes,
Philippe Ohresser,
Thomas Michely
Abstract:
The structure and magnetic properties of Co clusters, comprising from 26 to 2700 atoms, self-organized or not on the graphene/Ir(111) moiré, were studied in situ with the help of scanning tunneling microscopy and X-ray magnetic circular dichroism. Surprisingly the small clusters have almost no magnetic anisotropy. We find indication for a magnetic coupling between the clusters. Experiments have to…
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The structure and magnetic properties of Co clusters, comprising from 26 to 2700 atoms, self-organized or not on the graphene/Ir(111) moiré, were studied in situ with the help of scanning tunneling microscopy and X-ray magnetic circular dichroism. Surprisingly the small clusters have almost no magnetic anisotropy. We find indication for a magnetic coupling between the clusters. Experiments have to be performed carefully so as to avoid cluster damage by the soft X-rays.
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Submitted 13 July, 2011;
originally announced July 2011.
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Graphene on Ir(111) characterized by angle-resolved photoemission
Authors:
M. Kralj,
I. Pletikosic,
M. Petrovic,
P. Pervan,
M. Milun,
A. T. N'Diaye,
C. Busse,
T. Michely,
J. Fujii,
I. Vobornik
Abstract:
Angle resolved photoelectron spectroscopy (ARPES) is extensively used to characterize the dependence of the electronic structure of graphene on Ir(111) on the preparation process. ARPES findings reveal that temperature programmed growth alone or in combination with chemical vapor deposition leads to graphene displaying sharp electronic bands. The photoemission intensity of the Dirac cone is monito…
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Angle resolved photoelectron spectroscopy (ARPES) is extensively used to characterize the dependence of the electronic structure of graphene on Ir(111) on the preparation process. ARPES findings reveal that temperature programmed growth alone or in combination with chemical vapor deposition leads to graphene displaying sharp electronic bands. The photoemission intensity of the Dirac cone is monitored as a function of the increasing graphene area. Electronic features of the moiré superstructure present in the system, namely minigaps and replica bands are examined and used as robust features to evaluate graphene uniformity. The overall dispersion of the pi-band is analyzed. Finally, by the variation of photon energy, relative changes of the pi- and sigma-band intensities are demonstrated.
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Submitted 9 August, 2011; v1 submitted 20 May, 2011;
originally announced May 2011.
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Graphene on Ir(111): Physisorption with chemical modulation
Authors:
Carsten Busse,
Predrag Lazić,
Rabie Djemour,
Johann Coraux,
Timm Gerber,
Nicolae Atodiresei,
Vasile Caciuc,
Radovan Brako,
Alpha T. N'Diaye,
Stefan Blügel,
Jörg Zegenhagen,
Thomas Michely
Abstract:
The non-local van der Waals density functional (vdW-DF) approach is applied to calculate the binding of graphene to Ir(111). The precise agreement of the calculated mean height h = 3.41 Å of the C atoms with their mean height h = (3.38 \pm 0.04) Å as measured by the X-ray standing wave (XSW) technique provides a benchmark for the applicability of the non-local functional. We find bonding of graphe…
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The non-local van der Waals density functional (vdW-DF) approach is applied to calculate the binding of graphene to Ir(111). The precise agreement of the calculated mean height h = 3.41 Å of the C atoms with their mean height h = (3.38 \pm 0.04) Å as measured by the X-ray standing wave (XSW) technique provides a benchmark for the applicability of the non-local functional. We find bonding of graphene to Ir(111) to be due to the van der Waals interaction with an antibonding average contribution from chemical interaction. Despite its globally repulsive character, in certain areas of the large graphene moiré unit cell charge accumulation between Ir substrate and grapheneC atoms is observed, signaling a weak covalent bond formation.
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Submitted 14 June, 2011; v1 submitted 19 May, 2011;
originally announced May 2011.
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Wave function map** in graphene quantum dots with soft confinement
Authors:
D. Subramaniam,
F. Libisch,
Y. Li,
C. Pauly,
V. Geringer,
R. Reiter,
T. Mashoff,
M. Liebmann,
J. Burgdoerfer,
C. Busse,
T. Michely,
R. Mazzarello,
M. Pratzer,
M. Morgenstern
Abstract:
Using low-temperature scanning tunneling spectroscopy, we map the local density of states (LDOS) of graphene quantum dots supported on Ir(111). Due to a band gap in the projected Ir band structure around the graphene K point, the electronic properties of the QDs are dominantly graphene-like. Indeed, we compare the results favorably with tight binding calculations on the honeycomb lattice based on…
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Using low-temperature scanning tunneling spectroscopy, we map the local density of states (LDOS) of graphene quantum dots supported on Ir(111). Due to a band gap in the projected Ir band structure around the graphene K point, the electronic properties of the QDs are dominantly graphene-like. Indeed, we compare the results favorably with tight binding calculations on the honeycomb lattice based on parameters derived from density functional theory. We find that the interaction with the substrate near the edge of the island gradually opens a gap in the Dirac cone, which implies soft-wall confinement. Interestingly, this confinement results in highly symmetric wave functions. Further influences of the substrate are given by the known moir{é} potential and a 10% penetration of an Ir surface resonance
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Submitted 6 February, 2012; v1 submitted 19 April, 2011;
originally announced April 2011.
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Twins and their boundaries during homoepitaxy on Ir(111)
Authors:
Sebastian Bleikamp,
Johann Coraux,
Odile Robach,
Gilles Renaud,
Thomas Michely
Abstract:
The growth and annealing behavior of strongly twinned homoepitaxial films on Ir(111) has been investigated by scanning tunneling microscopy, low energy electron diffraction and surface X-ray diffraction. In situ surface X-ray diffraction during and after film growth turned out to be an efficient tool for the determination of twin fractions in multilayer films and to uncover the nature of side twin…
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The growth and annealing behavior of strongly twinned homoepitaxial films on Ir(111) has been investigated by scanning tunneling microscopy, low energy electron diffraction and surface X-ray diffraction. In situ surface X-ray diffraction during and after film growth turned out to be an efficient tool for the determination of twin fractions in multilayer films and to uncover the nature of side twin boundaries. The annealing of the twin structures is shown to take place in a two step process, reducing first the length of the boundaries between differently stacked areas and only then the twins themselves. A model for the structure of the side twin boundaries is proposed which is consistent with both the scanning tunneling microscopy and surface X-ray diffraction data.
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Submitted 14 June, 2010;
originally announced June 2010.
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The molecular structure of the H2O wetting layer on Pt(111)
Authors:
Sebastian Standop,
Alex Redinger,
Markus Morgenstern,
Thomas Michely,
Carsten Busse
Abstract:
The molecular structure of the wetting layer of ice on Pt(111) is resolved using scanning tunneling microscopy (STM). Two structures observed previously by diffraction techniques are imaged for coverages at or close to completion of the wetting layer. At 140K only a sqrt(37) x sqrt(37) R25.3° superstructure can be established, while at 130K also a sqrt(39) x sqrt(39) R16.1° superstructure with sli…
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The molecular structure of the wetting layer of ice on Pt(111) is resolved using scanning tunneling microscopy (STM). Two structures observed previously by diffraction techniques are imaged for coverages at or close to completion of the wetting layer. At 140K only a sqrt(37) x sqrt(37) R25.3° superstructure can be established, while at 130K also a sqrt(39) x sqrt(39) R16.1° superstructure with slightly higher molecular density is formed. In the temperature range under concern the superstructures reversibly transform into each other by slight changes in coverage through adsorption or desorption. The superstructures exhibit a complex pattern of molecules in different geometries.
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Submitted 7 July, 2010; v1 submitted 28 April, 2010;
originally announced April 2010.
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Is keV ion induced pattern formation on Si(001) caused by metal impurities?
Authors:
Sven Macko,
Frank Frost,
Bashkim Ziberi,
Daniel F. Förster,
Thomas Michely
Abstract:
We present ion beam erosion experiments performed in ultra high vacuum using a differentially pumped ion source and taking care that the ion beam hits the Si(001) sample only. Under these conditions no ion beam patterns form on Si for angles below 45 degrees with respect to the global surface normal using 2 keV Kr ions and fluences of 2 x 10^22 ions/m^2. In fact, the ion beam induces a smootheni…
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We present ion beam erosion experiments performed in ultra high vacuum using a differentially pumped ion source and taking care that the ion beam hits the Si(001) sample only. Under these conditions no ion beam patterns form on Si for angles below 45 degrees with respect to the global surface normal using 2 keV Kr ions and fluences of 2 x 10^22 ions/m^2. In fact, the ion beam induces a smoothening of preformed patterns. Simultaneous sputter deposition of stainless steel in this angular range creates a variety of patterns, similar to those previously ascribed to clean ion beam induced destabilization of the surface profile. Only for grazing incidence with incident angles between 60 degrees and 83 degrees pronounced ion beam patterns form. It appears that the angular dependent stability of Si(001) against pattern formation under clean ion beam erosion conditions is related to the angular dependence of the sputtering yield, and not primarily to a curvature dependent yield as invoked frequently in continuum theory models.
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Submitted 27 January, 2010; v1 submitted 4 December, 2009;
originally announced December 2009.
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A versatile fabrication method for cluster superlattices
Authors:
Alpha T. N'Diaye,
Timm Gerber,
Carsten Busse,
Josef Myslivecek,
Johann Coraux,
Thomas Michely
Abstract:
On the graphene moire on Ir(111) a variety of highly perfect cluster superlattices can be grown as shown is for Ir, Pt, W, and Re. Even materials that do not form cluster superlattices upon room temperature deposition may be grown into such by low temperature deposition or the application of cluster seeding through Ir as shown for Au, AuIr, FeIr. Criteria for the suitability of a material to for…
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On the graphene moire on Ir(111) a variety of highly perfect cluster superlattices can be grown as shown is for Ir, Pt, W, and Re. Even materials that do not form cluster superlattices upon room temperature deposition may be grown into such by low temperature deposition or the application of cluster seeding through Ir as shown for Au, AuIr, FeIr. Criteria for the suitability of a material to form a superlattice are given and largely confirmed. It is proven that at least Pt and Ir even form epitaxial cluster superlattices. The temperature stability of the cluster superlattices is investigated and understood on the basis of positional fluctuations of the clusters around their sites of minimum potential energy. The binding sites of Ir, Pt, W and Re cluster superlattices are determined and the ability to cover samples macroscopically with a variety of superlattices is demonstrated.
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Submitted 26 August, 2009;
originally announced August 2009.
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Selecting a single orientation for millimeter sized graphene sheets
Authors:
R. van Gastel,
A. T. N'Diaye,
D. Wall,
J. Coraux,
C. Busse,
F. -J. Meyer zu Heringdorf,
N. Buckanie,
M. Horn von Hoegen,
T. Michely,
B. Poelsema
Abstract:
We have used Low Energy Electron Microscopy (LEEM) and Photo Emission Electron Microscopy (PEEM) to study and improve the quality of graphene films grown on Ir(111) using chemical vapor deposition (CVD). CVD at elevated temperature already yields graphene sheets that are uniform and of monatomic thickness. Besides domains that are aligned with respect to the substrate, other rotational variants…
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We have used Low Energy Electron Microscopy (LEEM) and Photo Emission Electron Microscopy (PEEM) to study and improve the quality of graphene films grown on Ir(111) using chemical vapor deposition (CVD). CVD at elevated temperature already yields graphene sheets that are uniform and of monatomic thickness. Besides domains that are aligned with respect to the substrate, other rotational variants grow. Cyclic growth exploiting the faster growth and etch rates of the rotational variants, yields films that are 99 % composed of aligned domains. Precovering the substrate with a high density of graphene nuclei prior to CVD yields pure films of aligned domains extending over millimeters. Such films can be used to prepare cluster-graphene hybrid materials for catalysis or nanomagnetism and can potentially be combined with lift-off techniques to yield high-quality, graphene based electronic devices.
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Submitted 21 July, 2009;
originally announced July 2009.
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In situ observation of stress relaxation in epitaxial graphene
Authors:
Alpha T. N'Diaye,
Raoul van Gastel,
Antonio J. Martinez-Galera,
Johann Coraux,
Hichem Hattab,
Dirk Wall,
Frank-J. Meyer zu Heringdorf,
Michael Horn-von Hoegen,
Jose M. Gomez-Rodriguez,
Bene Poelsema,
Carsten Busse,
Thomas Michely
Abstract:
Upon cooling, branched line defects develop in epitaxial graphene grown at high temperature on Pt(111) and Ir(111). Using atomically resolved scanning tunneling microscopy we demonstrate that these defects are wrinkles in the graphene layer, i.e. stripes of partially delaminated graphene. With low energy electron microscopy (LEEM) we investigate the wrinkling phenomenon in situ. Upon temperature…
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Upon cooling, branched line defects develop in epitaxial graphene grown at high temperature on Pt(111) and Ir(111). Using atomically resolved scanning tunneling microscopy we demonstrate that these defects are wrinkles in the graphene layer, i.e. stripes of partially delaminated graphene. With low energy electron microscopy (LEEM) we investigate the wrinkling phenomenon in situ. Upon temperature cycling we observe hysteresis in the appearance and disappearance of the wrinkles. Simultaneously with wrinkle formation a change in bright field imaging intensity of adjacent areas and a shift in the moire spot positions for micro diffraction of such areas takes place. The stress relieved by wrinkle formation results from the mismatch in thermal expansion coefficients of graphene and the substrate. A simple one-dimensional model taking into account the energies related to strain, delamination and bending of graphene is in qualitative agreement with our observations.
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Submitted 15 September, 2009; v1 submitted 4 June, 2009;
originally announced June 2009.
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Dirac Cones and Minigaps for Graphene on Ir(111)
Authors:
I. Pletikosic,
M. Kralj,
P. Pervan,
R. Brako,
J. Coraux,
A. T. N'Diaye,
C. Busse,
T. Michely
Abstract:
Epitaxial graphene on Ir(111) prepared in excellent structural quality is investigated by angle-resolved photoelectron spectroscopy. It clearly displays a Dirac cone with the Dirac point shifted only slightly above the Fermi level. The moire resulting from the overlaid graphene and Ir(111) surface lattices imposes a superperiodic potential giving rise to Dirac cone replicas and the opening of mi…
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Epitaxial graphene on Ir(111) prepared in excellent structural quality is investigated by angle-resolved photoelectron spectroscopy. It clearly displays a Dirac cone with the Dirac point shifted only slightly above the Fermi level. The moire resulting from the overlaid graphene and Ir(111) surface lattices imposes a superperiodic potential giving rise to Dirac cone replicas and the opening of minigaps in the band structure.
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Submitted 13 February, 2009; v1 submitted 17 July, 2008;
originally announced July 2008.
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Spiral Growth and Step Edge Barriers
Authors:
A. Redinger,
O. Ricken,
P. Kuhn,
A. Raetz,
A. Voigt,
J. Krug,
T. Michely
Abstract:
The growth of spiral mounds containing a screw dislocation is compared to the growth of wedding cakes by two-dimensional nucleation. Using phase field simulations and homoepitaxial growth experiments on the Pt(111) surface we show that both structures attain the same characteristic large scale shape when a significant step edge barrier suppresses interlayer transport. The higher vertical growth…
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The growth of spiral mounds containing a screw dislocation is compared to the growth of wedding cakes by two-dimensional nucleation. Using phase field simulations and homoepitaxial growth experiments on the Pt(111) surface we show that both structures attain the same characteristic large scale shape when a significant step edge barrier suppresses interlayer transport. The higher vertical growth rate observed for the spiral mounds on Pt(111) reflects the different incorporation mechanisms for atoms in the top region and can be formally represented by an enhanced apparent step edge barrier.
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Submitted 14 September, 2007;
originally announced September 2007.
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Two Dimensional Ir-Cluster Lattices on Moiré of Graphene with Ir(111)
Authors:
Alpha N'Diaye,
Sebastian Bleikamp,
Peter J. Feibelman,
Thomas Michely
Abstract:
Lattices of Ir clusters have been grown by vapor phase deposition on graphene moirés on Ir(111). The clusters are highly ordered, spatially and thermally stable below 500K. Their narrow size distribution is tunable from 4 to about 130 atoms. A model for cluster binding to the graphene is presented based on scanning tunneling microscopy and density functional theory. The proposed binding mechanis…
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Lattices of Ir clusters have been grown by vapor phase deposition on graphene moirés on Ir(111). The clusters are highly ordered, spatially and thermally stable below 500K. Their narrow size distribution is tunable from 4 to about 130 atoms. A model for cluster binding to the graphene is presented based on scanning tunneling microscopy and density functional theory. The proposed binding mechanism suggests that similar cluster lattices might be grown of materials other than Ir.
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Submitted 12 September, 2006;
originally announced September 2006.
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Reaction Kinetics in a Tight Spot
Authors:
Ofer Biham,
Joachim Krug,
Azi Lipshtat,
Thomas Michely
Abstract:
The standard analysis of reaction networks based on deterministic rate equations fails in confined geometries, commonly encountered in fields such as astrochemistry, thin film growth and cell biology. In these systems the small reactant population implies anomalous behavior of reaction rates, which can be accounted for only by following the full distribution of reactant numbers.
The standard analysis of reaction networks based on deterministic rate equations fails in confined geometries, commonly encountered in fields such as astrochemistry, thin film growth and cell biology. In these systems the small reactant population implies anomalous behavior of reaction rates, which can be accounted for only by following the full distribution of reactant numbers.
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Submitted 22 May, 2005;
originally announced May 2005.
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Island nucleation in the presence of step edge barriers: Theory and applications
Authors:
Joachim Krug,
Paolo Politi,
Thomas Michely
Abstract:
We develop a theory of nucleation on top of two-dimensional islands bordered by steps with an additional energy barrier $ΔE_S$ for descending atoms. The theory is based on the concept of the residence time of an adatom on the island,and yields an expression for the nucleation rate which becomes exact in the limit of strong step edge barriers. This expression differs qualitatively and quantitativ…
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We develop a theory of nucleation on top of two-dimensional islands bordered by steps with an additional energy barrier $ΔE_S$ for descending atoms. The theory is based on the concept of the residence time of an adatom on the island,and yields an expression for the nucleation rate which becomes exact in the limit of strong step edge barriers. This expression differs qualitatively and quantitatively from that obtained using the conventional rate equation approach to nucleation [J. Tersoff et al., Phys. Rev. Lett.72, 266 (1994)]. We argue that rate equation theory fails because nucleation is dominated by the rare instances when two atoms are present on the island simultaneously. The theory is applied to two distinct problems: The onset of second layer nucleation in submonolayer growth, and the distribution of the sizes of top terraces of multilayer mounds under conditions of strong step edge barriers. Application to homoepitaxial growth on Pt(111) yields the estimate $ΔE_S \geq 0.33$ eV for the additional energy barrier at CO-decorated steps.
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Submitted 22 December, 1999;
originally announced December 1999.