-
Ultrafast optical properties of stoichiometric and non-stoichiometric refractory metal nitrides TiNx, ZrNx, and HfNx
Authors:
Jaroslaw Judek,
Rakesh Dhama,
Alessandro Pianelli,
Piotr Wrobel,
Pawel Piotr Michalowski,
Jayanta Dana,
Humeyra Caglayan
Abstract:
Refractory metal nitrides have recently gained attention in various fields of modern photonics due to their cheap and robust production technology, silicon-technology compatibility, high thermal and mechanical resistance, and competitive optical characteristics in comparison to typical plasmonic materials like gold and silver. In this work, we demonstrate that by varying the stoichiometry of sputt…
▽ More
Refractory metal nitrides have recently gained attention in various fields of modern photonics due to their cheap and robust production technology, silicon-technology compatibility, high thermal and mechanical resistance, and competitive optical characteristics in comparison to typical plasmonic materials like gold and silver. In this work, we demonstrate that by varying the stoichiometry of sputtered nitride films, both static and ultrafast optical responses of refractory metal nitrides can efficiently be controlled. We further prove that the spectral changes in ultrafast transient response are directly related to the position of the epsilon-near-zero region. At the same time, the analysis of the temporal dynamics allows us to identify three time components - the "fast" femtosecond one, the "moderate" picosecond one, and the "slow" at the nanosecond time scale. We also find out that the non-stoichiometry does not significantly decrease the recovery time of the reflectance value. Our results show the strong electron-phonon coupling and reveal the importance of both the electron and lattice temperature-induced changes in the permittivity near the ENZ region and the thermal origin of the long tail in the transient optical response of refractory nitrides.
△ Less
Submitted 11 September, 2023;
originally announced September 2023.
-
Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys
Authors:
Damiano Ricciarelli,
Giovanni Mannino,
Ioannis Deretzis,
Gaetano Calogero,
Giuseppe Fisicaro,
Richard Daubriac,
Remi Demoulin,
Fuccio Cristiano,
Pawel P. Michalowski,
Pablo Acosta-Alba,
Jean-Michel Hartmann,
Sébastien Kerdilès,
Antonino La Magna
Abstract:
Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed integration schemes. Optimizing the LA process along with the experimental design is challenging, especially when complex 3D nanostructured systems with various shapes an…
▽ More
Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed integration schemes. Optimizing the LA process along with the experimental design is challenging, especially when complex 3D nanostructured systems with various shapes and phases are involved. Within this context, reliable simulations of laser melting are required for optimizing the process parameters while reducing the number of experimental tests. This gives rise to a virtual Design of Experiments (DoE). $Si_{1-x}Ge_{x}$ alloys are nowadays used for their compatibility with silicon devices enabling to engineer properties such as strain, carrier mobilities and bandgap. In this work, the laser melting process of relaxed and strained $Si_{1-x}Ge_{x}$ is simulated with a finite element method / phase field approach. Particularly, we calibrated the dielectric functions of the alloy for its crystalline and liquid phase using experimental data. We highlighted the importance of reproducing the exact reflectivity of the interface between air and the material in its different aggregation states, to correctly mimic the process. We indirectly discovered intriguing features on the optical behavior of melt silicon-germanium.
△ Less
Submitted 8 September, 2023; v1 submitted 28 March, 2023;
originally announced March 2023.
-
Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate
Authors:
Jaroslaw Wrobel,
Gilberto Umana-Membreno,
Jacek Boguski,
Dariusz Sztenkiel,
Pawel Piotr Michalowski,
Piotr Martyniuk,
Lorenzo Faraone,
Jerzy Wrobel,
Antoni Rogalski
Abstract:
High quality berylium doped InAs layer grown by MBE on GaAs substrate has been examined via magnetotransport measurements and high resolution quantitative mobility spectrum analysis in the range from 5 to 300 K and up to 15 T magnetic field. The layer homogenity and dopant concentration has been proofed via HR-SIMS. The results shew four channel conductivity and essential splitting of the most pop…
▽ More
High quality berylium doped InAs layer grown by MBE on GaAs substrate has been examined via magnetotransport measurements and high resolution quantitative mobility spectrum analysis in the range from 5 to 300 K and up to 15 T magnetic field. The layer homogenity and dopant concentration has been proofed via HR-SIMS. The results shew four channel conductivity and essential splitting of the most populated holelike channel below 55 K. The multilayer model concluded from the QMSA results has been compared with nextnano simulation.
△ Less
Submitted 2 August, 2019; v1 submitted 31 July, 2019;
originally announced August 2019.
