Showing 1–10 of 10 results for author: Miard, A

Exciton polaritons in two-dimensional photonic crystals

Authors: Daniele Bajoni, Dario Gerace, Matteo Galli, Jacqueline Bloch, Remy Braive, Isabelle Sagnes, Audrey Miard, Aristide Lemaître, Maddalena Patrini, Lucio Claudio Andreani

Abstract: Experimental evidence of strong coupling between excitons confined in a quantum well and the photonic modes of a two-dimensional dielectric lattice is reported. Both resonant scattering and photoluminescence spectra at low temperature show the anticrossing of the polariton branches, fingerprint of strong coupling regime. The experiments are successfully interpreted in terms of a quantum theory o… ▽ More Experimental evidence of strong coupling between excitons confined in a quantum well and the photonic modes of a two-dimensional dielectric lattice is reported. Both resonant scattering and photoluminescence spectra at low temperature show the anticrossing of the polariton branches, fingerprint of strong coupling regime. The experiments are successfully interpreted in terms of a quantum theory of exciton-photon coupling in the investigated structure. These results show that the polariton dispersion can be tailored by properly varying the photonic crystal lattice parameter, which opens the possibility to obtain the generation of entangled photon pairs through polariton stimulated scattering. △ Less

Submitted 16 July, 2009; originally announced July 2009.

Comments: 5 pages, 4 figures

Journal ref: Physical Review B 80, 201308 (2009)

Transient chirp in high speed photonic crystal quantum dots lasers with controlled spontaneous emission

Authors: Remy Braive, Sylvain Barbay, Isabelle Sagnes, Audrey Miard, Isabelle Robert-Philip, Alexios Beveratos

Abstract: We report on a series of experiments on the dynamics of spontaneous emission controlled nanolasers. The laser cavity is a photonic crystal slab cavity, embedding self-assembled quantum dots as gain material. The implementation of cavity electrodynamics effects increases significantly the large signal modulation bandwidth, with measured modulation speeds of the order of 10 GHz while kee** an ex… ▽ More We report on a series of experiments on the dynamics of spontaneous emission controlled nanolasers. The laser cavity is a photonic crystal slab cavity, embedding self-assembled quantum dots as gain material. The implementation of cavity electrodynamics effects increases significantly the large signal modulation bandwidth, with measured modulation speeds of the order of 10 GHz while kee** an extinction ratio of 19 dB. A linear transient wavelength shift is reported, corresponding to a chirp of less than 100 pm for a 35-ps laser pulse. We observe that the chirp characteristics are independent of the repetition rate of the laser up to 10 GHz. △ Less

Submitted 9 December, 2008; originally announced December 2008.

Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor

Authors: M. Tran, H. Jaffres, C. Deranlot, J. -M. George, A. Fert, A. Miard, A. Lemaitre

Abstract: We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $ΔV$ at the interface as high as 1.2mV for a current density of 0.34 nA.$μm^{-2}$. This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a fe… ▽ More We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $ΔV$ at the interface as high as 1.2mV for a current density of 0.34 nA.$μm^{-2}$. This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al$_2$O$_3$/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers travelling back into the ferromagnetic contact reproduces accurately the experimental results. △ Less

Submitted 4 October, 2011; v1 submitted 27 October, 2008; originally announced October 2008.

Exciton/plasmon polaritons in GaAs/GaAlAs heterostructures near a metallic layer

Authors: J. Bellessa, C. Symonds, C. Meynaud, J. C. Plenet, E. Cambril, A. Miard, L. Ferlazzo, A. Lemaitre

Abstract: We report on the strong coupling between inorganic quantum well excitons and surface plasmons. For that purpose a corrugated silver film was deposited on the top of a heterostructure consisting of GaAs/GaAlAs quantum wells. The formation of plasmon/heavy-hole exciton/light-hole exciton mixed states is demonstrated with reflectometry experiments. The interaction energies amount to 21 meV for the… ▽ More We report on the strong coupling between inorganic quantum well excitons and surface plasmons. For that purpose a corrugated silver film was deposited on the top of a heterostructure consisting of GaAs/GaAlAs quantum wells. The formation of plasmon/heavy-hole exciton/light-hole exciton mixed states is demonstrated with reflectometry experiments. The interaction energies amount to 21 meV for the plasmon/light-hole exciton and 22 meV for the plasmon/heavy-hole exciton. Some particularities of the plasmon-exciton coupling were also discussed and qualitatively related to the plasmon polarization. △ Less

Submitted 24 September, 2008; originally announced September 2008.

Comments: 5 pages, 5 figures

Controlled light-matter coupling for a single quantum dot embedded in a pillar microcavity using far-field optical lithography

Authors: A. Dousse, L. Lanco, J. Suffczynski, E. Semenova, A. Miard, A. Lemaitre, I. Sagnes, C. Roblin, J. Bloch, P. Senellart

Abstract: Using far field optical lithography, a single quantum dot is positioned within a pillar microcavity with a 50 nm accuracy. The lithography is performed in-situ at 10 K while measuring the quantum dot emission. Deterministic spectral and spatial matching of the cavity-dot system is achieved in a single step process and evidenced by the observation of strong Purcell effect. Deterministic coupling… ▽ More Using far field optical lithography, a single quantum dot is positioned within a pillar microcavity with a 50 nm accuracy. The lithography is performed in-situ at 10 K while measuring the quantum dot emission. Deterministic spectral and spatial matching of the cavity-dot system is achieved in a single step process and evidenced by the observation of strong Purcell effect. Deterministic coupling of two quantum dots to the same optical mode is achieved, a milestone for quantum computing. △ Less

Submitted 5 January, 2009; v1 submitted 28 July, 2008; originally announced July 2008.

Comments: Modified version: new title, additional experimental data in figure 3

Journal ref: PHYSICAL REVIEW LETTERS : PRL 101, 267404 (2008)

Hole - Nuclear Spin Interaction in Quantum Dots

Authors: B. Eble, C. Testelin, P. Desfonds, F. Bernardot, A. Balocchi, T. Amand, A. Miard, A. Lemaitre, X. Marie, M. Chamarro

Abstract: We have measured the carrier spin dynamics in p-doped InAs/GaAs quantum dots by pump-probe photo-induced circular dichroism and time-resolved photoluminescence experiments. We show that the hole spin dephasing is controlled by the hyperfine interaction between hole and nuclear spins. In the absence of external magnetic field, we find a characteristic hole spin dephasing time of 15 ns, in close a… ▽ More We have measured the carrier spin dynamics in p-doped InAs/GaAs quantum dots by pump-probe photo-induced circular dichroism and time-resolved photoluminescence experiments. We show that the hole spin dephasing is controlled by the hyperfine interaction between hole and nuclear spins. In the absence of external magnetic field, we find a characteristic hole spin dephasing time of 15 ns, in close agreement with our calculations based on dipole-dipole coupling between the hole and the quantum dot nuclei. Finally we demonstrate that a small external magnetic field, typically 10 mT instead of 200 mT for the case of electrons, quenches the hyperfine hole spin dephasing. △ Less

Submitted 22 July, 2008; v1 submitted 7 July, 2008; originally announced July 2008.

Comments: 17 pages, 3 figures, submitted to Phys. Rev. Lett

Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers

Authors: Aristide Lemaître, Audrey Miard, Laurent Travers, Olivia Mauguin, Ludovic Largeau, Catherine Gourdon, Vincent Jeudy, Michael Tran, Jean-Marie George

Abstract: A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interes… ▽ More A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interesting alternative to the metamorphic approach, in particular for magnetization reversal experiments where epitaxial defects stongly affect the domain wall propagation. △ Less

Submitted 4 July, 2008; originally announced July 2008.

Journal ref: Applied Physics Letters 93 (2008) 021123

Optically probing the fine structure of a single Mn atom in an InAs quantum dot

Authors: A. Kudelski, A. Lemaître, A. Miard, P. Voisin, T. C. M. Graham, R. J. Warburton, O. Krebs

Abstract: We report on the optical spectroscopy of a single InAs/GaAs quantum dot (QD) doped with a single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the Mn impurity is a neutral acceptor state A^0 whose effective spin J=1 is significantly perturbed by the QD potential and its associated strain field. The spin interaction with photo-carriers injected in the quantum dot… ▽ More We report on the optical spectroscopy of a single InAs/GaAs quantum dot (QD) doped with a single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the Mn impurity is a neutral acceptor state A^0 whose effective spin J=1 is significantly perturbed by the QD potential and its associated strain field. The spin interaction with photo-carriers injected in the quantum dot is shown to be ferromagnetic for holes, with an effective coupling constant of a few hundreds of micro-eV, but vanishingly small for electrons. △ Less

Submitted 29 October, 2007; originally announced October 2007.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 99, 247209 (2007)

Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

Authors: Daniele Bajoni, Pascale Senellart, Esther Wertz, Isabelle Sagnes, Audrey Miard, Aristide Lemaître, Jacqueline Bloch

Abstract: Polariton lasing is demonstrated on the zero dimensional states of single GaAs/GaAlAs micropillar cavities. Under non resonant excitation, the measured polariton ground state occupancy is found to be as large as $10^{4}$. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occu… ▽ More Polariton lasing is demonstrated on the zero dimensional states of single GaAs/GaAlAs micropillar cavities. Under non resonant excitation, the measured polariton ground state occupancy is found to be as large as $10^{4}$. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode. △ Less

Submitted 3 December, 2007; v1 submitted 10 October, 2007; originally announced October 2007.

Comments: 5 pages, 4 figures, accepted for publication in Physical Review Letters

Journal ref: Phys. Rev. Lett. 100, 047401 (2008)

Magnetic patterning of (Ga,Mn)As by hydrogen passivation

Authors: Laura Thevenard, Audrey Miard, Laurent Vila, Giancarlo Faini, Aristide Lemaître, Nicolas Vernier, Jacques Ferré, Stéphane Fusil

Abstract: We present an original method to magnetically pattern thin layers of (Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the hole density, and thereby locally suppress the carrier-mediated ferromagnetic phase. The sample surface is thus maintained continuous, and the minimal structure size is of about 200 nm. In micron-sized ferromagnetic dots fabricated by hydrogen passiva… ▽ More We present an original method to magnetically pattern thin layers of (Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the hole density, and thereby locally suppress the carrier-mediated ferromagnetic phase. The sample surface is thus maintained continuous, and the minimal structure size is of about 200 nm. In micron-sized ferromagnetic dots fabricated by hydrogen passivation on perpendicularly magnetized layers, the switching fields can be maintained closer to the continuous film coercivity, compared to dots made by usual dry etch techniques. △ Less

Submitted 14 June, 2007; originally announced June 2007.