Showing 1–8 of 8 results for author: Meziani, Y M

Temperature Dependent Zero-Field Splittings in Graphene

Authors: C. Bray, K. Maussang, C. Consejo, J. A. Delgado-Notario, S. S. Krishtopenko, I. Yahniuk, S. Gebert, S. Ruffenach, K. Dinar, E. Moench, K. Indykiewicz, B. Jouault, J. Torres, Y. M. Meziani, W. Knap, A. Yurgens, S. D. Ganichev, F. Teppe

Abstract: Graphene is a quantum spin Hall insulator with a 45 $μ$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for applications in quantum technologies, given the resulting long spin relaxation time. On the other side, the staggered sub-lattice potential, resulting from the coupl… ▽ More Graphene is a quantum spin Hall insulator with a 45 $μ$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for applications in quantum technologies, given the resulting long spin relaxation time. On the other side, the staggered sub-lattice potential, resulting from the coupling of graphene with its boron nitride substrate, compensates intrinsic spin-orbit coupling and decreases the non-trivial topological gap, which may lead to the phase transition into trivial band insulator state. In this work, we present extensive experimental studies of the zero-field splittings in monolayer and bilayer graphene in a temperature range 2K-12K by means of sub-Terahertz photoconductivity-based electron spin resonance technique. Surprisingly, we observe a decrease of the spin splittings with increasing temperature. We discuss the origin of this phenomenon by considering possible physical mechanisms likely to induce a temperature dependence of the spin-orbit coupling. These include the difference in the expansion coefficients between the graphene and the boron nitride substrate or the metal contacts, the electron-phonon interactions, and the presence of a magnetic order at low temperature. Our experimental observation expands knowledge about the non-trivial topological gap in graphene. △ Less

Submitted 23 December, 2022; v1 submitted 28 September, 2022; originally announced September 2022.

Comments: Main text with figures (20 pages) and Supplementary Information (14 pages) Accepted in Phys. Rev. B

Journal ref: Phys. Rev. B 106, 245141 (2022)

Nature of the 1/f Noise in Graphene, Direct Evidence for the Mobility Fluctuations Mechanism

Authors: Adil Rehman, Juan Antonio Delgado Notario, Juan Salvador Sanchez, Yahya Moubarak Meziani, Grzegorz Cywiński, Wojciech Knap, Alexander A. Balandin, Michael Levinshtein, Sergey Rumyantsev

Abstract: The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility fluctuations, the direct evidence is lacking (f is the frequency). Here we measured noise in h-BN encapsulated graphene transistor under the condition of geometrical magne… ▽ More The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility fluctuations, the direct evidence is lacking (f is the frequency). Here we measured noise in h-BN encapsulated graphene transistor under the condition of geometrical magnetoresistance to directly assess the mechanism of low-frequency electronic current fluctuations. It was found that the relative noise spectral density of the graphene resistance fluctuations depends non-monotonically on the magnetic field (B) with a minimum at approximately uB=1 (u is the electron mobility). This observation proves unambiguously that the mobility fluctuations are the dominant mechanism of the electronic noise in high-quality graphene. Our results are important for all proposed applications of graphene in electronics and add to the fundamental understanding of the 1/f noise origin in any electronic device. △ Less

Submitted 7 November, 2021; originally announced November 2021.

Comments: 23 pages, 3 figures, Noise measurements of h-BN encapsulated graphene transistor under the condition of geometrical magnetoresistance to directly assess the mechanism of low-frequency electronic current fluctuations

Fast response photogating in monolayer MoS2 phototransistors

Authors: Daniel Vaquero, Vito Clericò, Juan Salvador-Sánchez, Elena Díaz, Francisco Domínguez-Adame, Leonor Chico, Yahya M. Meziani, Enrique Diez, Jorge Quereda

Abstract: Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by a combination of two physical mechanisms: photoconductive effect (PCE) and photogating effect (PGE). In earlier literature for monolayer (1L) MoS2 phototransistors PGE is… ▽ More Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by a combination of two physical mechanisms: photoconductive effect (PCE) and photogating effect (PGE). In earlier literature for monolayer (1L) MoS2 phototransistors PGE is generally attributed to charge trap** by polar molecules adsorbed to the semiconductor channel, giving rise to a very slow photoresponse. Thus, the photoresponse of 1L-MoS2 phototransistors at high-frequency light modulation is assigned to PCE alone. Here we investigate the photoresponse of a fully h-BN encapsulated monolayer (1L) MoS2 phototransistor. In contrast with previous understanding, we identify a rapidly responding PGE mechanism that becomes the dominant contribution to photoresponse under high-frequency light modulation. Using a Hornbeck-Haynes model for the photocarrier dynamics, we fit the illumination power dependence of this PGE and estimate the energy level of the involved traps. The resulting energies are compatible with shallow traps in MoS2 caused by the presence of sulfur vacancies. △ Less

Submitted 13 September, 2021; v1 submitted 22 December, 2020; originally announced December 2020.

Comments: arXiv admin note: text overlap with arXiv:2004.02526

Excitons, trions and Rydberg states in monolayer MoS2 revealed by low temperature photocurrent spectroscopy

Authors: Daniel Vaquero, Vito Clericò, Juan Salvador-Sánchez, Adrián Martín-Ramos, Elena Díaz, Francisco Domínguez-Adame, Yahya M. Meziani, Enrique Diez, Jorge Quereda

Abstract: We investigate excitonic transitions in a h-BN encapsulated monolayer $\textrm{MoS}_2$ phototransistor by photocurrent spectroscopy at cryogenic temperature (T = 5 K). The spectra presents excitonic peaks with linewidths as low as 8 meV, one order of magnitude lower than in earlier photocurrent spectroscopy measurements. We observe four spectral features corresponding to the ground states of neutr… ▽ More We investigate excitonic transitions in a h-BN encapsulated monolayer $\textrm{MoS}_2$ phototransistor by photocurrent spectroscopy at cryogenic temperature (T = 5 K). The spectra presents excitonic peaks with linewidths as low as 8 meV, one order of magnitude lower than in earlier photocurrent spectroscopy measurements. We observe four spectral features corresponding to the ground states of neutral excitons ($\textrm{X}_{\textrm{1s}}^\textrm{A}$ and $\textrm{X}_{\textrm{1s}}^\textrm{B}$) and charged trions ($\textrm{T}^\textrm{A}$ and $\textrm{T}^\textrm{B}$) as well as up to eight additional spectral lines at energies above the $\textrm{X}_{\textrm{1s}}^\textrm{B}$ transition, which we attribute to the Rydberg series of excited states of $\textrm{X}^\textrm{A}$ and $\textrm{X}^\textrm{B}$. The relative intensities of the different spectral features can be tuned by the applied gate and drain-source voltages, with trions and Rydberg excited states becoming more prominent at large gate voltages. Using an effective-mass theory for excitons in two-dimensional transition-metal dichalcogenides we are able to accurately fit the measured spectral lines and unambiguously associate them with their corresponding Rydberg states. The fit also allows us to determine the quasiparticle bandgap and spin-orbit splitting of monolayer $\textrm{MoS}_2$, as well as the exciton binding energies of $\textrm{X}^\textrm{A}$ and $\textrm{X}^\textrm{B}$. △ Less

Submitted 28 August, 2020; v1 submitted 6 April, 2020; originally announced April 2020.

Quantum nanoconstrictions fabricated by cryo-etching in encapsulated graphene

Authors: Vito Clericò, Juan Antonio Delgado-Notario, Marta Saiz-Bretín, Andrey V. Malyshev, Yahya M. Meziani, Pedro Hidalgo, Bianchi Méndez, Mario Amado, Francisco Domínguez-Adame, Enrique Diez

Abstract: More than a decade after the discovery of graphene, ballistic transport in nanostructures based on this intriguing material still represents a challenging field of research in two-dimensional electronics. The presence of rough edges in nanostructures based on this material prevents the appearance of truly ballistic electron transport as theo\-re\-tically predicted and, therefore, not well-develope… ▽ More More than a decade after the discovery of graphene, ballistic transport in nanostructures based on this intriguing material still represents a challenging field of research in two-dimensional electronics. The presence of rough edges in nanostructures based on this material prevents the appearance of truly ballistic electron transport as theo\-re\-tically predicted and, therefore, not well-developed plateaus of conductance have been revealed to date. In this work we report on a novel implementation of the cryo-etching method, which enabled us to fabricate graphene nanoconstrictions encapsulated between hexagonal boron nitride thin films with unprecedented control of the structure edges. High quality smooth nanometer-rough edges are characterized by atomic force microscopy and a clear correlation between low roughness and the existence of well-developed quantized conductance steps with the concomitant occurrence of ballistic transport is found at low temperature. In par\-ti\-cu\-lar, we come upon exact 2$e^{2}/h$ quantization steps of conductance at zero magnetic field due to size quantization, as it has been theoretically predicted for truly ballistic electron transport through graphene nanoconstrictions. △ Less

Submitted 20 February, 2019; originally announced February 2019.

Journal ref: Scientific Reports 9, 13572 (2019)

Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell

Authors: V. V. Popov, D. V. Fateev, T. Otsuji, Y. M. Meziani, D. Coquillat, W. Knap

Abstract: Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 kV/W at room temperature in the photovoltaic response mode is predicted for strong asymmetry of the structure unit cell. This value of the responsivity is an order of magnitude greater than reported previously for the oth… ▽ More Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 kV/W at room temperature in the photovoltaic response mode is predicted for strong asymmetry of the structure unit cell. This value of the responsivity is an order of magnitude greater than reported previously for the other types of uncooled plasmonic terahertz detectors. Such enormous responsivity can be obtained without using any supplementary antenna elements because the double-grating gate acts as an aerial matched antenna that effectively couples the incoming terahertz radiation to plasma oscillations in the structure channel. △ Less

Submitted 14 November, 2011; v1 submitted 8 November, 2011; originally announced November 2011.

Comments: Submitted to APL, 8 pages, 2 figures

Heating process in the pre-Breakdown regime of the Quantum Hall Efect : a size dependent effect

Authors: Y. M. Meziani, C. Chaubet, B. Jouault, S. Bonifacie, A. Raymond, W. Poirier, F. Piquemal

Abstract: Our study presents experimental measurements of the contact and longitudinal voltage drops in Hall bars, as a function of the current amplitude. We are interested in the heating phenomenon which takes place before the breakdown of the quantum Hall effect, i.e. the pre-breakdown regime. Two types of samples has been investigated, at low temperature (4.2 and 1.5K) and high magnetic field (up to 13… ▽ More Our study presents experimental measurements of the contact and longitudinal voltage drops in Hall bars, as a function of the current amplitude. We are interested in the heating phenomenon which takes place before the breakdown of the quantum Hall effect, i.e. the pre-breakdown regime. Two types of samples has been investigated, at low temperature (4.2 and 1.5K) and high magnetic field (up to 13 T). The Hall bars have several different widths, and our observations clearly demonstrate that the size of the sample influences the heating phenomenon. By measuring the critical currents of both contact and longitudinal voltages, as a function of the filling factor (around $i=2$), we highlight the presence of a high electric field domain near the source contact, which is observable only in samples whose width is smaller than 400 microns. △ Less

Submitted 29 July, 2003; originally announced July 2003.

Comments: 4 pages, 5 igures, 7th International Symposium of Research in High Magnetic Fields, to be published in physica B

Behavior of the contacts of Quantum Hall Effect devices at high currents : an electronic thermometer

Authors: Y. M. Meziani, C. Chaubet, S. Bonifacie, B. Jouault, A. Raymond, W. Poirier, F. Piquemal

Abstract: This paper reports on an experimental study of the contact resistance of Hall bars in the Quantum Hall Effect regime while increasing the current through the sample. These measurements involve also the longitudinal resistance and they have been always performed before the breakdown of the Quantum Hall Effect. Our investigations are restricted to the $i=2$ plateau which is used in all metrologica… ▽ More This paper reports on an experimental study of the contact resistance of Hall bars in the Quantum Hall Effect regime while increasing the current through the sample. These measurements involve also the longitudinal resistance and they have been always performed before the breakdown of the Quantum Hall Effect. Our investigations are restricted to the $i=2$ plateau which is used in all metrological measurements of the von Klitzing constant $R_K$. A particular care has been taken concerning the configuration of the measurement. Four configurations were used for each Hall bar by reversing the current and the magnetic field polarities. Several samples with different width have been studied and we observed that the critical current for the contact resistance increases with the width of the Hall bar as previously observed for the critical current of the longitudinal resistance. The critical currents exhibit either a linear or a sublinear increase. All our observations are interpreted in the current understanding of the Quantum hall effect brekdown. Our analysis suggests that a heated region appears at the current contact, develops and then extends in the whole sample while increasing the current. Consequently, we propose to use the contact resistance as an electronic thermometer for the Hall fluid. △ Less

Submitted 29 July, 2003; v1 submitted 13 June, 2003; originally announced June 2003.

Comments: 27 pages, 14 figures, resubmitted to phys. Rev. B