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Measuring Intra-pixel Sensitivity Variations of a CMOS Image Sensor
Authors:
Swaraj Bandhu Mahato,
Joris De Ridder,
Guy Meynants,
Gert Raskin,
Hans Van Winckel
Abstract:
Some applications in scientific imaging, like space-based high-precision photometry, benefit from a detailed characterization of the sensitivity variation within a pixel. A detailed map of the intra-pixel sensitivity (IPS) allows to increase the photometric accuracy by correcting for the impact of the tiny sub-pixel movements of the image sensor during integration. This paper reports the measureme…
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Some applications in scientific imaging, like space-based high-precision photometry, benefit from a detailed characterization of the sensitivity variation within a pixel. A detailed map of the intra-pixel sensitivity (IPS) allows to increase the photometric accuracy by correcting for the impact of the tiny sub-pixel movements of the image sensor during integration. This paper reports the measurement of the sub-pixel sensitivity variation and the extraction of the IPS map of a front-side illuminated CMOS image sensor with a pixel pitch of 6 \boldmath$μm$. Our optical measurement setup focuses a collimated beam onto the imaging surface with a microscope objective. The spot was scanned in a raster over a single pixel to probe the pixel response at each (sub-pixel) scan position. We model the optical setup in ZEMAX to cross-validate the optical spot profile described by an Airy diffraction pattern. In this work we introduce a forward modeling technique to derive the variation of the IPS. We model the optical spot scanning system and discretize the CMOS pixel response. Fitting this model to the measured data allows us to quantify the spatial sensitivity variation within a single pixel. Finally, we compare our results to those obtained from the more commonly used Wiener deconvolution.
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Submitted 4 May, 2018;
originally announced May 2018.
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A novel technique to characterize the spatial intra-pixel sensitivity variations in a CMOS image sensor
Authors:
Swaraj Mahato,
J. De Ridder,
Guy Meynants,
Gert Raskin,
H. Van Winckel
Abstract:
To understand the scientific imaging capability, one must characterize the intra-pixel sensitivity variation (IPSV) of the CMOS image sensor. Extracting an IPSV map contributes to an improved detector calibration that allows to eliminate some of the uncertainty in the spatial response of the system. This paper reports the measurement of the sub-pixel sensitivity variation and the extraction of the…
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To understand the scientific imaging capability, one must characterize the intra-pixel sensitivity variation (IPSV) of the CMOS image sensor. Extracting an IPSV map contributes to an improved detector calibration that allows to eliminate some of the uncertainty in the spatial response of the system. This paper reports the measurement of the sub-pixel sensitivity variation and the extraction of the 2D IPSV map of a front-side illuminated CMOS image sensor with a pixel pitch of 6 μm. Our optical measurement setup focuses a collimated beam onto the imaging surface with a microscope objective. The spot was scanned in a raster over a single pixel and its immediate neighbors in order to probe its response at selected (sub-pixel) positions. In this work we introduced a novel technique to extract the IPSV map by fitting (forward modeling) the measured data to a mathematical model of the image, generated in a single pixel that allows for a spatially varying sensitivity.
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Submitted 10 January, 2018;
originally announced January 2018.
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Noise optimization of the source follower of a CMOS pixel using BSIM3 noise model
Authors:
Swaraj Mahato,
Guy Meynants,
Gert Raskin,
J. De Ridder,
H. Van Winckel
Abstract:
CMOS imagers are becoming increasingly popular in astronomy. A very low noise level is required to observe extremely faint targets and to get high-precision flux measurements. Although CMOS technology offers many advantages over CCDs, a major bottleneck is still the read noise. To move from an industrial CMOS sensor to one suitable for scientific applications, an improved design that optimizes the…
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CMOS imagers are becoming increasingly popular in astronomy. A very low noise level is required to observe extremely faint targets and to get high-precision flux measurements. Although CMOS technology offers many advantages over CCDs, a major bottleneck is still the read noise. To move from an industrial CMOS sensor to one suitable for scientific applications, an improved design that optimizes the noise level is essential. Here, we study the 1/f and thermal noise performance of the source follower (SF) of a CMOS pixel in detail. We identify the relevant design parameters, and analytically study their impact on the noise level using the BSIM3v3 noise model with an enhanced model of gate capacitance. Our detailed analysis shows that the dependence of the 1/f noise on the geometrical size of the source follower is not limited to minimum channel length, compared to the classical approach to achieve the minimum 1/f noise. We derive the optimal gate dimensions (the width and the length) of the source follower that minimize the 1/f noise, and validate our results using numerical simulations. By considering the thermal noise or white noise along with 1/f noise, the total input noise of the source follower depends on the capacitor ratio CG/CFD and the drain current (Id). Here, CG is the total gate capacitance of the source follower and CFD is the total floating diffusion capacitor at the input of the source follower. We demonstrate that the optimum gate capacitance (CG) depends on the chosen bias current but ranges from CFD/3 to CFD to achieve the minimum total noise of the source follower. Numerical calculation and circuit simulation with 180nm CMOS technology are performed to validate our results.
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Submitted 14 September, 2016;
originally announced September 2016.
