Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers
Authors:
K. C. Ku,
S. J. Potashnik,
R. F. Wang,
M. J. Seong,
E. Johnston-Halperin,
R. C. Meyers,
S. H. Chun,
A. Mascarenhas,
A. C. Gossard,
D. D. Awschalom,
P. Schiffer,
N. Samarth
Abstract:
We report Curie temperatures up to 150 K in annealed Ga1-xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman scattering) show that the higher ferromagnetic transition temperature results from an enhanced free hole density. The data also indicate that, in addition to the car…
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We report Curie temperatures up to 150 K in annealed Ga1-xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman scattering) show that the higher ferromagnetic transition temperature results from an enhanced free hole density. The data also indicate that, in addition to the carrier concentration, the sample thickness limits the maximum attainable Curie temperature in this material - suggesting that the free surface of Ga1-xMnxAs epilayers is important in determining their physical properties.
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Submitted 19 October, 2002;
originally announced October 2002.
