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Enhanced Spin and Electronic Reconstructions at the Cuprate-Manganite Interface
Authors:
B. A. Gray,
E. J. Moon,
I. C. Tung,
M. Kareev,
Jian Liu,
D. J. Meyers,
M. J. Bedzyk,
J. W. Freeland,
J. Chakhalian
Abstract:
We report on a resonant soft X-ray spectroscopy study of the electronic and magnetic structure of the cuprate-manganite interface. Polarized X-ray spectroscopy measurements taken at the Cu L edge reveal up to a five-fold increase in the dichroic signal as compared to past experimental and theoretical values. Furthermore an increase in the degree of interlayer charge transfer up to 0.25e (where e i…
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We report on a resonant soft X-ray spectroscopy study of the electronic and magnetic structure of the cuprate-manganite interface. Polarized X-ray spectroscopy measurements taken at the Cu L edge reveal up to a five-fold increase in the dichroic signal as compared to past experimental and theoretical values. Furthermore an increase in the degree of interlayer charge transfer up to 0.25e (where e is charge of an electron) per copper ion is observed leading to a profound reconstruction in the orbital scheme for these interfacial copper ions. It is inferred that these enhancement are related to an increase in TMI observed for manganite layers grown with rapidly modulated flux.
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Submitted 16 January, 2013;
originally announced January 2013.
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Field-effect diode based on electron-induced Mott transition in NdNiO3
Authors:
W. L. Lim,
E. J. Moon,
J. W. Freeland,
D. J. Meyers,
M. Kareev,
J. Chakhalian,
S. Urazhdin
Abstract:
We studied an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3. In our device, the NdNiO3 is electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric conductivity with respect to the bias polarity. The asymmetry is temperature-dependent and is most significant near the metal-insulator transition. The I-V characterist…
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We studied an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3. In our device, the NdNiO3 is electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric conductivity with respect to the bias polarity. The asymmetry is temperature-dependent and is most significant near the metal-insulator transition. The I-V characteristics exhibit a strong dependence both on the thermal history and the history of the applied voltage bias. Our two-terminal device represents a simple and efficient route for studies of the effect of electron do** on the metal-insulator transition.
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Submitted 9 October, 2012;
originally announced October 2012.
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Epitaxial Stabilization of Ultrathin Films of Rare-Earth Nickelates
Authors:
D. J. Meyers,
E. J. Moon,
M. Kareev,
I. C. Tung,
B. A. Gray,
Jian Liu,
M. J. Bedzyk,
J. W. Freeland,
J. Chakhalian
Abstract:
We report on the synthesis of ultrathin films of highly distorted EuNiO3 (ENO) grown by interrupted pulse laser epitaxy on YAlO3 (YAO) substrates. Through map** the phase space of nickelate thin film epitaxy, the optimal growth temperatures were found to scale linearly with the Goldschmidt tolerance factor. Considering the gibbs energy of the expanding film, this empirical trend is discussed in…
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We report on the synthesis of ultrathin films of highly distorted EuNiO3 (ENO) grown by interrupted pulse laser epitaxy on YAlO3 (YAO) substrates. Through map** the phase space of nickelate thin film epitaxy, the optimal growth temperatures were found to scale linearly with the Goldschmidt tolerance factor. Considering the gibbs energy of the expanding film, this empirical trend is discussed in terms of epitaxial stabilization and the escalation of the lattice energy due to lattice distortions and decreasing symmetry. These findings are fundamental to other complex oxide perovskites, and provide a route to the synthesis of other perovskite structures in ultrathin-film form.
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Submitted 22 December, 2011;
originally announced December 2011.
