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Strain evolution in GaN Nanowires: from free-surface objects to coalesced templates
Authors:
M. Hugues,
P. A. Shields,
F. Sacconi,
M. Mexis,
M. Auf der Maur,
M. Cooke,
M. Dineen,
A. Di Carlo,
D. W. E. Allsopp,
J. Zúñiga-Pérez
Abstract:
Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1-dimensional objects. X-ray diffraction and photoluminescence techniques have been used to obtain the strain profile inside the nanowires from their base to their top facet for both initial compressive and tensile strain…
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Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1-dimensional objects. X-ray diffraction and photoluminescence techniques have been used to obtain the strain profile inside the nanowires from their base to their top facet for both initial compressive and tensile strains. The relaxation behaviors derived from optical and structural characterizations perfectly match the numerical results of calculations based on a continuous media approach. By monitoring the elastic relaxation enabled by the lateral free-surfaces, the height from which the nanowires can be considered strain-free has been estimated. Based on this result, NWs sufficiently high to be strain-free have been coalesced to form a continuous GaN layer. X-ray diffraction, photoluminescence and cathodoluminescence clearly show that despite the initial strain-free nanowires template, the final GaN layer is strained.
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Submitted 30 May, 2013;
originally announced May 2013.
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ZnO-Based Polariton Laser Operating at Room Temperature: From Excitonic to Photonic Condensate
Authors:
Feng Li,
Laurent Orosz,
Olfa Kamoun,
Sophie Bouchoule,
Christelle Brimont,
Pierre Disseix,
Thierry Guillet,
Xavier Lafosse,
Mathieu Leroux,
Joel Leymarie,
Meletis Mexis,
Martine Mihailovic,
François Réveret,
Dmitry Solnyshkov,
Jesus Zuniga-Perez,
Guillaume Malpuech
Abstract:
A laser threshold is determined by the gain condition, which has been progressively reduced by the use of heterostructures and of quantum confinement. The polariton laser is the ultimate step of this evolution: coherent emission is obtained from the spontaneous decay of an exciton-polariton condensate, without the achievement of any gain condition. ZnO, with its unique excitonic properties, is the…
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A laser threshold is determined by the gain condition, which has been progressively reduced by the use of heterostructures and of quantum confinement. The polariton laser is the ultimate step of this evolution: coherent emission is obtained from the spontaneous decay of an exciton-polariton condensate, without the achievement of any gain condition. ZnO, with its unique excitonic properties, is the best choice for a blue/UV-emitting polariton laser device. We report on the fabrication of a new family of fully hybrid microcavities that combine the best-quality ZnO material available (bulk substrate) and two dielectric distributed Bragg reflectors, demonstrating large quality factors (>2500) and Rabi splittings (~200 meV). Low threshold polariton lasing is achieved between 4 and 300 K and for excitonic fractions ranging between 12% and 96 %. A phase diagram highlighting the role of LO phonon-assisted relaxation in this polar semiconductor is established, and a remarkable switching between polariton modes is demonstrated.
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Submitted 31 July, 2012;
originally announced July 2012.
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LO-phonon assisted polariton lasing in a ZnO based microcavity
Authors:
L. Orosz,
F. Réveret,
F. Médard,
P. Disseix,
J. Leymarie,
M. Mihailovic,
D. Solnyshkov,
G. Malpuech,
J. Zuniga-Pérez,
F. Semond,
M. Leroux,
S. Bouchoule,
X. Lafosse,
M. Mexis,
C. Brimont,
T. Guillet
Abstract:
Polariton relaxation mechanisms are analysed experimentally and theoretically in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the energy difference between the exciton reservoir and the bottom of the lower polariton branch is resonant with the LO phonon energy. Tuning off this resonance increases the threshold, and exciton-exciton scattering processes become involved in…
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Polariton relaxation mechanisms are analysed experimentally and theoretically in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the energy difference between the exciton reservoir and the bottom of the lower polariton branch is resonant with the LO phonon energy. Tuning off this resonance increases the threshold, and exciton-exciton scattering processes become involved in the polariton relaxation. These observations are qualitatively reproduced by simulations based on the numerical solution of the semi-classical Boltzmann equations.
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Submitted 30 November, 2011;
originally announced December 2011.
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Fabrication and Optical Properties of a Fully Hybrid Epitaxial ZnO-Based Microcavity in the Strong Coupling Regime
Authors:
L. Orosz,
F. Réveret,
S. Bouchoule,
J. Zúñiga-Pérez,
F. Médard,
J. Leymarie,
P. Disseix,
M. Mihailovic,
E. Frayssinet,
F. Semond,
M. Leroux,
M. Mexis,
C. Brimont,
T. Guillet
Abstract:
In order to achieve polariton lasing at room temperature, a new fabrication methodology for planar microcavities is proposed: a ZnO-based microcavity in which the active region is epitaxially grown on an AlGaN/AlN/Si substrate and in which two dielectric mirrors are used. This approach allows as to simultaneously obtain a high-quality active layer together with a high photonic confinement as demon…
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In order to achieve polariton lasing at room temperature, a new fabrication methodology for planar microcavities is proposed: a ZnO-based microcavity in which the active region is epitaxially grown on an AlGaN/AlN/Si substrate and in which two dielectric mirrors are used. This approach allows as to simultaneously obtain a high-quality active layer together with a high photonic confinement as demonstrated through macro-, and micro-photoluminescence (μ-PL) and reflectivity experiments. A quality factor of 675 and a maximum PL emission at k=0 are evidenced thanks to μ-PL, revealing an efficient polaritonic relaxation even at low excitation power.
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Submitted 13 June, 2011; v1 submitted 4 May, 2011;
originally announced May 2011.
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High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots
Authors:
Meletios Mexis,
Sylvain Sergent,
Thierry Guillet,
Christelle Brimont,
Thierry Bretagnon,
Bernard Gil,
Fabrice Semond,
Mathieu Leroux,
Delphine Néel,
Sylvain David,
X. Checoury,
Philippe Boucaud
Abstract:
We compare the quality factor values of the whispery gallery modes of microdisks incorporating GaN quantum dots (QDs) grown on AlN and AlGaN barriers by performing room temperature photoluminescence (PL) spectroscopy. The PL measurements show a large number of high Q factor (Q) resonant modes on the whole spectrum which allows us to identify the different radial mode families and to compare them w…
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We compare the quality factor values of the whispery gallery modes of microdisks incorporating GaN quantum dots (QDs) grown on AlN and AlGaN barriers by performing room temperature photoluminescence (PL) spectroscopy. The PL measurements show a large number of high Q factor (Q) resonant modes on the whole spectrum which allows us to identify the different radial mode families and to compare them with simulations. We report a considerable improvement of the Q factor which reflect the etching quality and the relatively low cavity loss by inserting QDs into the cavity. GaN/AlN QDs based microdisks show very high Q values (Q > 7000) whereas the Q factor is only up to 2000 in microdisks embedding QDs grown on AlGaN barrier layer. We attribute this difference to the lower absorption below bandgap for AlN barrier layers at the energies of our experimental investigation.
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Submitted 17 October, 2011; v1 submitted 11 January, 2011;
originally announced January 2011.
