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Electronic g-factor and tunable spin-orbit coupling in a gate-defined InSbAs quantum dot
Authors:
S. Metti,
C. Thomas,
M. J. Manfra
Abstract:
We investigate transport properties of stable gate-defined quantum dots formed in an InSb$_{0.87}$As$_{0.13}$ quantum well. High $\textit{g}$-factor and strong spin-orbit-coupling make InSb$_x$As$_{1-x}$ a promising platform for exploration of topological superconductivity and spin-based devices. We extract a nearly isotropic in-plane effective $\textit{g}$-factor by studying the evolution of Coul…
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We investigate transport properties of stable gate-defined quantum dots formed in an InSb$_{0.87}$As$_{0.13}$ quantum well. High $\textit{g}$-factor and strong spin-orbit-coupling make InSb$_x$As$_{1-x}$ a promising platform for exploration of topological superconductivity and spin-based devices. We extract a nearly isotropic in-plane effective $\textit{g}$-factor by studying the evolution of Coulomb blockade peaks and differential conductance as a function of the magnitude and direction of magnetic field. The in-plane $\textit{g}$-factors, $|g^*_{[1\bar{1}0]}|$ and $|g^*_{[110]}|$, range from 49 - 58. Interestingly, this $\textit{g}$-factor is higher than that found in quantum dots fabricated from pure InSb quantum wells. We demonstrate tunable spin-orbit-coupling by tracking a spin-orbit-coupling mediated avoided level crossing between the ground state and an excited state in magnetic field. By increasing the electron density, we observed an increase in an avoided crossing separation, $Δ_{SO}$. The maximum energy separation extracted is $Δ_{SO}$$\sim$100 $μ$eV.
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Submitted 9 November, 2023;
originally announced November 2023.
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Spin-orbit coupling and electron scattering in high-quality InSb$_{1-x}$As$_{x}$ quantum wells
Authors:
S. Metti,
C. Thomas,
D. Xiao,
M. J. Manfra
Abstract:
InSb$_{1-x}$As$_{x}$ is a promising material system for exploration of topological superconductivity in hybrid superconductor/semiconductor devices due to large effective g-factor and enhanced spin-orbit coupling when compared to binary InSb and InAs. Much remains to be understood concerning the fundamental properties of the two-dimensional electron gas (2DEG) in InSbAs quantum wells. We report on…
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InSb$_{1-x}$As$_{x}$ is a promising material system for exploration of topological superconductivity in hybrid superconductor/semiconductor devices due to large effective g-factor and enhanced spin-orbit coupling when compared to binary InSb and InAs. Much remains to be understood concerning the fundamental properties of the two-dimensional electron gas (2DEG) in InSbAs quantum wells. We report on the electrical properties of a series of 30 nm InSb$_{1-x}$As$_{x}$ quantum wells grown 40 nm below the surface with three different arsenic mole fractions, x = 0.05, 0.13 and 0.19. The dependencies of mobility on 2DEG density and arsenic mole fraction are analyzed. For the x = 0.05 sample, the 2DEG displays a peak mobility $μ$ = 2.4 $\times$ 10$^5$ cm$^2$/Vs at a density of n = 2.5 $\times$ 10$^{11}$ cm$^{-2}$. High mobility, small effective mass, and strong spin-orbit coupling result in beating in the Shubnikov de Hass oscillations at low magnetic field. Fourier analysis of the Shubnikov de Haas oscillations facilitates extraction of the Rashba spin-orbit parameter $α$ as a function of 2DEG density and quantum well mole fraction. For x = 0.19 at n = 3.1 $\times$ 10$^{11}$ cm$^{-2}$, $α$ $\approx$ 300 meV$Å$, among the highest reported values in III-V materials.
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Submitted 5 July, 2022;
originally announced July 2022.
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Stable quantum dots in an InSb two-dimensional electron gas
Authors:
Ivan Kulesh,
Chung Ting Ke,
Candice Thomas,
Saurabh Karwal,
Christian M. Moehle,
Sara Metti,
Ray Kallaher,
Geoffrey C. Gardner,
Michael J. Manfra,
Srijit Goswami
Abstract:
Indium antimonide (InSb) two-dimensional electron gases (2DEGs) have a unique combination of material properties: high electron mobility, strong spin-orbit interaction, large Landé g-factor, and small effective mass. This makes them an attractive platform to explore a variety of mesoscopic phenomena ranging from spintronics to topological superconductivity. However, there exist limited studies of…
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Indium antimonide (InSb) two-dimensional electron gases (2DEGs) have a unique combination of material properties: high electron mobility, strong spin-orbit interaction, large Landé g-factor, and small effective mass. This makes them an attractive platform to explore a variety of mesoscopic phenomena ranging from spintronics to topological superconductivity. However, there exist limited studies of quantum confined systems in these 2DEGs, often attributed to charge instabilities and gate drifts. We overcome this by removing the $δ$-do** layer from the heterostructure, and induce carriers electrostatically. This allows us to perform the first detailed study of stable gate-defined quantum dots in InSb 2DEGs. We demonstrate two distinct strategies for carrier confinement and study the charge stability of the dots. The small effective mass results in a relatively large single particle spacing, allowing for the observation of an even-odd variation in the addition energy. By tracking the Coulomb oscillations in a parallel magnetic field we determine the ground state spin configuration and show that the large g-factor ($\sim$30) results in a singlet-triplet transition at magnetic fields as low as 0.3 T.
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Submitted 16 October, 2019;
originally announced October 2019.
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Ballistic superconductivity and tunable $π$-junctions in InSb quantum wells
Authors:
Chung Ting Ke,
Christian M. Moehle,
Folkert K. de Vries,
Candice Thomas,
Sara Metti,
Charles R. Guinn,
Ray Kallaher,
Mario Lodari,
Giordano Scappucci,
Tiantian Wang,
Rosa E. Diaz,
Geoffrey C. Gardner,
Michael J. Manfra,
Srijit Goswami
Abstract:
Two-dimensional electron gases (2DEGs) coupled to superconductors offer the opportunity to explore a variety of quantum phenomena. These include the study of novel Josephson effects, superconducting correlations in quantum (spin) Hall systems, hybrid superconducting qubits and emergent topological states in semiconductors with spin-orbit interaction (SOI). InSb is a well-known example of such a st…
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Two-dimensional electron gases (2DEGs) coupled to superconductors offer the opportunity to explore a variety of quantum phenomena. These include the study of novel Josephson effects, superconducting correlations in quantum (spin) Hall systems, hybrid superconducting qubits and emergent topological states in semiconductors with spin-orbit interaction (SOI). InSb is a well-known example of such a strong SOI semiconductor, however hybrid superconducting devices in InSb quantum wells remain unexplored. Here, we interface InSb 2DEGs with a superconductor (NbTiN) to create Josephson junctions (JJs), thus providing the first evidence of induced superconductivity in high quality InSb quantum wells. The JJs support supercurrent transport over several microns and display clear signatures of ballistic superconductivity. Furthermore, we exploit the large Landé g-factor and gate tunability of the junctions to control the current-phase relation, and drive transitions between the $0$ and $π$-states. This control over the free energy landscape allows us to construct a phase diagram identifying these $0$ and $π$-regions, in agreement with theory. Our results establish InSb quantum wells as a promising new material platform to study the interplay between superconductivity, SOI and magnetism.
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Submitted 27 February, 2019;
originally announced February 2019.
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Generalized Time Integration Schemes for Space-Time Moving Finite Elements
Authors:
Randolph E. Bank,
Maximilian S. Metti
Abstract:
In this paper, we analyze and provide numerical illustrations for a moving finite element method applied to convection-dominated, time-dependent partial differential equations. We follow a method of lines approach and utilize an underlying tensor-product finite element space that permits the mesh to evolve continuously in time and undergo discontinuous reconfigurations at discrete time steps. We e…
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In this paper, we analyze and provide numerical illustrations for a moving finite element method applied to convection-dominated, time-dependent partial differential equations. We follow a method of lines approach and utilize an underlying tensor-product finite element space that permits the mesh to evolve continuously in time and undergo discontinuous reconfigurations at discrete time steps. We employ the TR-BDF2 method as the time integrator for piecewise quadratic tensor-product spaces, and provide an almost symmetric error estimate for the procedure. Our numerical results validate the efficacy of these moving finite elements.
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Submitted 28 October, 2013;
originally announced October 2013.
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An Error Analysis of Some Higher Order Space-Time Moving Finite Elements
Authors:
Randolph E. Bank,
Maximilian S. Metti
Abstract:
This is a study of certain finite element methods designed for convection-dominated, time-dependent partial differential equations. Specifically, we analyze high order space-time tensor product finite element discretizations, used in a method of lines approach coupled with mesh modification to solve linear partial differential equations. Mesh modification can be both continuous (moving meshes) and…
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This is a study of certain finite element methods designed for convection-dominated, time-dependent partial differential equations. Specifically, we analyze high order space-time tensor product finite element discretizations, used in a method of lines approach coupled with mesh modification to solve linear partial differential equations. Mesh modification can be both continuous (moving meshes) and discrete (static rezone). These methods can lead to significant savings in computation costs for problems having solutions that develop steep moving fronts or other localized time-dependent features of interest. Our main result is a symmetric a priori error estimate for the finite element solution computed in this setting.
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Submitted 28 October, 2013;
originally announced October 2013.
