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Visualizing the microscopic origins of topology in twisted molybdenum ditelluride
Authors:
Ellis Thompson,
Keng Tou Chu,
Florie Mesple,
Xiao-Wei Zhang,
Chaowei Hu,
Yuzhou Zhao,
Heonjoon Park,
Jiaqi Cai,
Eric Anderson,
Kenji Watanabe,
Takashi Taniguchi,
Jihui Yang,
Jiun-Haw Chu,
Xiaodong Xu,
Ting Cao,
Di Xiao,
Matthew Yankowitz
Abstract:
In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wav…
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In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wavefunctions within the moiré unit cell can thus offer crucial insights into the band topology. Here, we use scanning tunneling microscopy and spectroscopy (STM/S) to probe the layer-pseudospin skyrmion textures of tMoTe$_2$. We do this by simultaneously visualizing the moiré lattice structure and the spatial localization of its electronic states. We find that the wavefunctions associated with the topological flat bands exhibit a spatially-dependent layer polarization within the moiré unit cell. This is in excellent agreement with our theoretical modeling, thereby revealing a direct microscopic connection between the structural properties of tMoTe$_2$ and its band topology. Our work enables new pathways for engineering FQAH states with strain, as well as future STM studies of the intertwined correlated and topological states arising in gate-tunable devices.
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Submitted 29 May, 2024;
originally announced May 2024.
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Magnetic evolution of Cr$_2$Te$_3$ epitaxially grown on graphene with post-growth annealing
Authors:
Quentin Guillet,
Hervé Boukari,
Fadi Choueikani,
Philippe Ohresser,
Abdelkarim Ouerghi,
Florie Mesple,
Vincent T. Renard,
Jean-François Jacquot,
Denis Jalabert,
Céline Vergnaud,
Frédéric Bonell,
Alain Marty,
Matthieu Jamet
Abstract:
Two-dimensional and van der Waals ferromagnets are ideal platform to study low dimensional magnetism and proximity effects in van der Waals heterostructures. Their ultimate two dimensional character offers also the opportunity to easily adjust their magnetic properties using strain or electric fields. Among 2D ferromagnets, the Cr$_{1+x}$Te$_2$ compounds with $x$=0-1 are very promising because the…
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Two-dimensional and van der Waals ferromagnets are ideal platform to study low dimensional magnetism and proximity effects in van der Waals heterostructures. Their ultimate two dimensional character offers also the opportunity to easily adjust their magnetic properties using strain or electric fields. Among 2D ferromagnets, the Cr$_{1+x}$Te$_2$ compounds with $x$=0-1 are very promising because their magnetic properties depend on the amount of self-intercalated Cr atoms between pure CrTe$_2$ layers and the Curie temperature (T$_C$) can reach room temperature for certain compositions. Here, we investigate the evolution of the composition, structural and magnetic properties of thin Cr$_{1.33}$Te$_2$ (Cr$_2$Te$_3$) films epitaxially grown on graphene upon annealing. We observe a transition above 450°C from the Cr$_{1.33}$Te$_2$ phase with perpendicular magnetic anisotropy and a T$_C$ of 180 K to a composition close to Cr$_{1.39}$Te$_2$ with in-plane magnetic anisotropy and a T$_C$ of 240-250 K. This phase remains stable up to 650°C above which a pure Cr film starts to form. This work demonstrates the complex interplay between intercalated Cr, lattice parameters and magnetic properties in Cr$_{1+x}$Te$_2$ compounds.
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Submitted 9 May, 2024;
originally announced May 2024.
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Giant atomic swirl in graphene bilayers with biaxial heterostrain
Authors:
F. Mesple,
N. R. Walet,
G. Trambly de Laissardière,
F. Guinea,
D. Dosenovic,
H. Okuno,
C. Paillet,
A. Michon,
C. Chapelier,
V. T. Renard
Abstract:
The study of moiré engineering started with the advent of van der Waals heterostructures in which stacking two-dimensional layers with different lattice constants leads to a moiré pattern controlling their electronic properties. The field entered a new era when it was found that adjusting the twist between two graphene layers led to strongly-correlated-electron physics and topological effects asso…
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The study of moiré engineering started with the advent of van der Waals heterostructures in which stacking two-dimensional layers with different lattice constants leads to a moiré pattern controlling their electronic properties. The field entered a new era when it was found that adjusting the twist between two graphene layers led to strongly-correlated-electron physics and topological effects associated with atomic relaxation. Twist is now used routinely to adjust the properties of two-dimensional materials. Here, we investigate a new type of moiré superlattice in bilayer graphene when one layer is biaxially strained with respect to the other - so-called biaxial heterostrain. Scanning tunneling microscopy measurements uncover spiraling electronic states associated with a novel symmetry-breaking atomic reconstruction at small biaxial heterostrain. Atomistic calculations using experimental parameters as inputs reveal that a giant atomic swirl forms around regions of aligned stacking to reduce the mechanical energy of the bilayer. Tight-binding calculations performed on the relaxed structure show that the observed electronic states decorate spiraling domain wall solitons as required by topology. This study establishes biaxial heterostrain as an important parameter to be harnessed for the next step of moiré engineering in van der Waals multilayers.
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Submitted 25 August, 2023;
originally announced August 2023.
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Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures
Authors:
K. Abdukayumov,
M. Mičica,
F. Ibrahim,
C. Vergnaud,
A. Marty,
J. -Y. Veuillen,
P. Mallet,
I. Gomes de Moraes,
D. Dosenovic,
A. Wright,
J. Tignon,
J. Mangeney,
A. Ouerghi,
V. Renard,
F. Mesple,
F. Bonell,
H. Okuno,
M. Chshiev,
J. -M. George,
H. Jaffrès,
S. Dhillon,
M. Jamet
Abstract:
Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as t…
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Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as they possess strong spin-orbit coupling (SOC) and reduced crystal symmetries. Moreover, SCC and the resulting THz emission can be tuned with the number of layers, electric field or strain. Here, epitaxially grown 1T-PtSe$_2$ and sputtered Ferromagnet (FM) heterostructures are presented as a novel THz emitter where the 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe$_2$ layers is demonstrated and further FM deposition leaves the PtSe$_2$ unaffected, as evidenced with extensive characterization. Through this atomic growth control, the unique thickness dependent electronic structure of PtSe$_2$ allows the control of the THz emission by SCC. Indeed, we demonstrate the transition from the inverse Rashba-Edelstein effect in one monolayer to the inverse spin Hall effect in multilayers. This band structure flexibility makes PtSe$_2$ an ideal candidate as a THz spintronic 2D material and to explore the underlying mechanisms and engineering of the SCC for THz emission.
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Submitted 11 May, 2023;
originally announced May 2023.
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Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials
Authors:
Quentin Guillet,
Libor Vojacek,
Djordje Dosenovic,
Fatima Ibrahim,
Herve Boukari,
**g Li,
Fadi Choueikani,
Philippe Ohresser,
Abdelkarim Ouerghi,
Florie Mesple,
Vincent Renard,
Jean-Francois Jacquot,
Denis Jalabert,
Hanako Okuno,
Mairbek Chshiev,
Celine Vergnaud,
Frederic Bonell,
Alain Marty,
Matthieu Jamet
Abstract:
Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA a…
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Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA and TC might be adjusted in ultrathin films by engineering composition, strain, or applying an electric field. In this work, we demonstrate the molecular beam epitaxy (MBE) growth of vdW heterostructures of five-monolayer quasi-freestanding Cr2Te3 on three classes of 2D materials: graphene (semimetal), WSe2 (semiconductor) and Bi2Te3 (topological insulator). By combining structural and chemical analysis down to the atomic level with ab initio calculations, we confirm the single crystalline character of Cr2Te3 films on the 2D materials with sharp vdW interfaces. They all exhibit PMA and TC close to the bulk Cr2Te3 value of 180 K. Ab initio calculations confirm this PMA and show how its strength depends on strain. Finally, Hall measurements reveal a strong anomalous Hall effect, which changes sign at a given temperature. We theoretically explain this effect by a sign change of the Berry phase close to the Fermi level. This transition temperature depends on the 2D material in proximity, notably as a consequence of charge transfer. MBE-grown Cr2Te3/2D material bilayers constitute model systems for the further development of spintronic devices combining PMA, large spin-orbit coupling and sharp vdW interface.
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Submitted 6 March, 2023;
originally announced March 2023.
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Heterostrain rules the flat-bands in magic-angle twisted graphene layers
Authors:
F. Mesple,
A. Missaoui,
T. Cea,
L. Huder,
G. Trambly de Laissardière,
F. Guinea,
C. Chapelier,
V. T. Renard
Abstract:
The moiré of twisted graphene bilayers can generate flat bands in which charge carriers do not posses enough kinetic energy to escape Coulomb interactions with each other leading to the formation of novel strongly correlated electronic states. This exceptionally rich physics relies on the precise arrangement between the layers.We survey published Scanning Tunnelling Microscope (STM) measurements t…
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The moiré of twisted graphene bilayers can generate flat bands in which charge carriers do not posses enough kinetic energy to escape Coulomb interactions with each other leading to the formation of novel strongly correlated electronic states. This exceptionally rich physics relies on the precise arrangement between the layers.We survey published Scanning Tunnelling Microscope (STM) measurements to prove that near the magic angle, native heterostrain, the relative deformations between the layers, dominates twist in determining the flat bands. This is demonstrated at large do** where electronic correlations have a weak effect and where we also show that tip-induced strain can have a strong influence. In the opposite situation of low do**, we find that electronic correlation further normalize the flat bands in a way that strongly depends on experimental details.
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Submitted 4 December, 2020;
originally announced December 2020.
