-
Measurement of Elastoresistivity at Finite Frequency by Amplitude Demodulation
Authors:
Alexander T. Hristov,
Johanna C. Palmstrom,
Joshua A. W. Straquadine,
Tyler A. Merz,
Harold Y. Hwang,
Ian R. Fisher
Abstract:
Elastoresistivity, the relation between resistivity and strain, can elucidate subtle properties of the electronic structure of a material and is an increasingly important tool for the study of strongly correlated materials. To date, elastoresistivity measurements have been predominantly performed with quasi-static (DC) strain. In this work, we demonstrate a method for using AC strain in elastoresi…
▽ More
Elastoresistivity, the relation between resistivity and strain, can elucidate subtle properties of the electronic structure of a material and is an increasingly important tool for the study of strongly correlated materials. To date, elastoresistivity measurements have been predominantly performed with quasi-static (DC) strain. In this work, we demonstrate a method for using AC strain in elastoresistivity measurements. A sample experiencing AC strain has a time-dependent resistivity, which modulates the voltage produced by an AC current; this effect produces time-dependent variations in resisitivity that are directly proportional to the elastoresistivity, and which can be measured more quickly, with less strain on the sample, and with less stringent requirements for temperature stability than the previous DC technique. Example measurements between 10 Hz and 3 kHz are performed on a material with a large, well-characterized and temperature dependent elastoresistivity: the representative iron-based superconductor BaFe$_{1.975}$Co$_{0.025}$As$_2$. These measurements yield a frequency independent elastoresistivity and reproduce results from previous DC elastoresistivity methods to within experimental accuracy. We emphasize that the dynamic (AC) elastoresistivity is a distinct material-specific property that has not previously been considered.
△ Less
Submitted 6 March, 2018; v1 submitted 5 March, 2018;
originally announced March 2018.
-
Polaronic behavior in a weak coupling superconductor
Authors:
Adrian G. Swartz,
Hisashi Inoue,
Tyler A. Merz,
Yasuyuki Hikita,
Srinivas Raghu,
Thomas P. Devereaux,
Steven Johnston,
Harold Y. Hwang
Abstract:
The nature of superconductivity in the dilute semiconductor SrTiO$_3$ has remained an open question for more than 50 years. The extremely low carrier densities ($10^{18}$ - $10^{20}$ cm$^{-3}$) at which superconductivity occurs suggests an unconventional origin of superconductivity outside of the adiabatic limit on which the Bardeen-Cooper-Schrieffer (BCS) and Migdal-Eliashberg (ME) theories are b…
▽ More
The nature of superconductivity in the dilute semiconductor SrTiO$_3$ has remained an open question for more than 50 years. The extremely low carrier densities ($10^{18}$ - $10^{20}$ cm$^{-3}$) at which superconductivity occurs suggests an unconventional origin of superconductivity outside of the adiabatic limit on which the Bardeen-Cooper-Schrieffer (BCS) and Migdal-Eliashberg (ME) theories are based. We take advantage of a newly developed method for engineering band alignments at oxide interfaces and access the electronic structure of Nb-doped SrTiO$_3$ using high resolution tunneling spectroscopy. We observe strong coupling to the highest energy longitudinal optic (LO) phonon branch and estimate the do** evolution of the dimensionless electron-phonon interaction strength ($λ$). Upon cooling below the superconducting transition temperature ($T_{\mathrm{c}}$), we observe a single superconducting gap corresponding to the weak-coupling limit of BCS theory, indicating an order of magnitude smaller coupling ($λ_{\textrm{BCS}} \approx 0.1$). These results suggest that despite the strong normal state interaction with electrons, the highest LO phonon does not provide a dominant contribution to pairing. They further demonstrate that SrTiO$_3$ is an ideal system to probe superconductivity over a wide range of carrier density, adiabatic parameter, and electron-phonon coupling strength.
△ Less
Submitted 27 December, 2017; v1 submitted 19 August, 2016;
originally announced August 2016.
-
Enhanced Superconducting Transition Temperature due to Tetragonal Domains in Two-Dimensionally Doped SrTiO$_3$
Authors:
Hilary Noad,
Eric M. Spanton,
Katja C. Nowack,
Hisashi Inoue,
Minu Kim,
Tyler A. Merz,
Christopher Bell,
Yasuyuki Hikita,
Ruqing Xu,
Wenjun Liu,
Arturas Vailionis,
Harold Y. Hwang,
Kathryn A. Moler
Abstract:
Strontium titanate is a low-temperature, non-Bardeen-Cooper-Schrieffer superconductor that superconducts to carrier concentrations lower than in any other system and exhibits avoided ferroelectricity at low temperatures. Neither the mechanism of superconductivity in strontium titanate nor the importance of the structure and dielectric properties for the superconductivity are well understood. We st…
▽ More
Strontium titanate is a low-temperature, non-Bardeen-Cooper-Schrieffer superconductor that superconducts to carrier concentrations lower than in any other system and exhibits avoided ferroelectricity at low temperatures. Neither the mechanism of superconductivity in strontium titanate nor the importance of the structure and dielectric properties for the superconductivity are well understood. We studied the effects of twin structure on superconductivity in a 5.5-nm-thick layer of niobium-doped SrTiO$_{3}$ embedded in undoped SrTiO$_{3}$. We used a scanning superconducting quantum interference device susceptometer to image the local diamagnetic response of the sample as a function of temperature. We observed regions that exhibited a superconducting transition temperature $T_{c}$ $\gtrsim$ 10% higher than the temperature at which the sample was fully superconducting. The pattern of these regions varied spatially in a manner characteristic of structural twin domains. Our results emphasize that the anisotropic dielectric properties of SrTiO$_{3}$ are important for its superconductivity, and need to be considered in any theory of the mechanism of the superconductivity.
△ Less
Submitted 30 May, 2016; v1 submitted 26 May, 2016;
originally announced May 2016.
-
Epitaxial Growth of VO$_{2}$ by Periodic Annealing
Authors:
J. W. Tashman,
J. H. Lee,
H. Paik,
J. A. Moyer,
R. Misra,
J. A. Mundy,
T. Spila,
T. A. Merz,
J. Schubert,
D. A. Muller,
P. Schiffer,
D. G. Schlom
Abstract:
We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO$_{2}$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 wa…
▽ More
We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO$_{2}$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.
△ Less
Submitted 27 January, 2014; v1 submitted 18 October, 2013;
originally announced October 2013.
