Showing 1–50 of 120 results for author: Mertig, I

Spin-gapped metals: A novel class of materials -- the case of semi-Heusler compounds

Authors: E. Sasioglu, M. Tas, S. Ghosh, W. Beida, B. Sanyal S. Blugel, I. Mertig, I. Galanakis

Abstract: Gapped metals, a recently discovered new class of materials, possess a band gap slightly above or below the Fermi level. These materials are intrinsic p- or n-type semiconductors eliminating the need for extrinsic do**. Inspired by this concept, we propose the so-called "spin-gapped metals" exhibiting intrinsic p- or n-type behavior for each spin channel independently. Their properties would be… ▽ More Gapped metals, a recently discovered new class of materials, possess a band gap slightly above or below the Fermi level. These materials are intrinsic p- or n-type semiconductors eliminating the need for extrinsic do**. Inspired by this concept, we propose the so-called "spin-gapped metals" exhibiting intrinsic p- or n-type behavior for each spin channel independently. Their properties would be similar to the dilute magnetic semiconductors eliminating the requirement for transition metal do**. Here, we demonstrate this novel concept in semi-Heusler compounds using first principles electronic band structure calculations. We comprehensively analyze their electronic and magnetic properties, paving the way for novel technological applications of Heusler compounds. △ Less

Submitted 1 March, 2024; originally announced March 2024.

Circular motion of non-collinear spin textures in Corbino disks: Dynamics of Néel- versus Bloch-type skyrmions and skyrmioniums

Authors: Ismael Ribeiro de Assis, Ingrid Mertig, Börge Göbel

Abstract: Magnetic skyrmions are nano-scale magnetic whirls that can be driven by currents via spin torques. They are promising candidates for spintronic devices such as the racetrack memory, where a motion along the uniform current is typically desired. However, for spin torque nano-oscillators in Corbino disks, the goal is to achieve a circular motion, perpendicular to the radially applied current. As we… ▽ More Magnetic skyrmions are nano-scale magnetic whirls that can be driven by currents via spin torques. They are promising candidates for spintronic devices such as the racetrack memory, where a motion along the uniform current is typically desired. However, for spin torque nano-oscillators in Corbino disks, the goal is to achieve a circular motion, perpendicular to the radially applied current. As we show, based on analytical calculations and micromagnetic simulations, Bloch skyrmions engage in a circular motion with frequencies in the MHz range when driven by spin-orbit torques. In contrast, Néel skyrmions get stuck at the edges of the disk. Our analysis reveals that the antagonistic dynamics between Bloch- and Néel-type magnetic textures arise from their helicity. Furthermore, we find that skyrmioniums, which are topologically trivial variations of skyrmions, move even faster and allow an increase in the current density without being pushed toward the edges of the disk. When driven by spin-transfer torques instead, Bloch and Néel skyrmions no longer exhibit different dynamics. Instead, they move along a circular trajectory due to the skyrmion Hall effect caused by their topological charge. Consequently, the topologically trivial skyrmioniums inevitably become trapped at the disk edge in this scenario. To provide a comprehensive understanding, our study also examines currents applied tangentially, further enriching our insights into skyrmion dynamics and appropriate current injection methods for skyrmion-based devices. △ Less

Submitted 4 June, 2024; v1 submitted 5 February, 2024; originally announced February 2024.

Comments: Marie Skłodowska-Curie Actions, H2020-MSCA-ITN-2020; Project acronym SPEAR; Grant Agreement No. 955671

Nonconventional screening of Coulomb interaction in two-dimensional semiconductors and metals: A comprehensive cRPA study of MX2 (M=Mo, W, Nb, Ta; X=S, Se, Te)

Authors: Hamid Reza Ramezani, Ersoy Sasioglu, Hanif Hadipour, Hamid Rahimpour Soleimani, Christoph Friedrich, Stefan Blugel, Ingrid Mertig

Abstract: Experimental observations of large exciton binding energies and non-hydrogenic Rydberg series in 2D semiconducting TMDs, along with deviations in plasmon dispersion in 2D metallic TMDs, suggest the presence of a nonconventional screening of the Coulomb interaction. The experimentally observed Mott insulating state in the charge density wave (CDW) reconstructed lattice of TMDs containing 4d and 5d… ▽ More Experimental observations of large exciton binding energies and non-hydrogenic Rydberg series in 2D semiconducting TMDs, along with deviations in plasmon dispersion in 2D metallic TMDs, suggest the presence of a nonconventional screening of the Coulomb interaction. The experimentally observed Mott insulating state in the charge density wave (CDW) reconstructed lattice of TMDs containing 4d and 5d elements further confirms the presence of strong Coulomb interactions in these systems. In this study, we use first-principles electronic structure calculations and constrained random-phase approximation to calculate the Coulomb interaction parameters (partially screened U and fully screened W) between localized $d$ electrons in 2D TMDs. We specifically explore materials represented by the formula MX2 (M=Nb, Ta, Mo, W, and X=S, Se, Te) and consider three different phases (1H, 1T, and 1T'). Our results show that the short-range interactions are strongly screened in all three phases, whereas the long-range interactions remain significant even in metallic systems. This nonconventional screening provides a compelling explanation for the deviations observed in the usual hydrogenic Rydberg series and conventional plasmon dispersion in 2D semiconducting and metallic TMDs, respectively. Our calculations yield on-site Coulomb interaction parameters U within the ranges of 0.8-2.5 eV, 0.8-1.9 eV, and 0.9-2.4 eV for the 1H, 1T, and 1T' structures, respectively. Furthermore, our findings indicate a substantially high ratio of on-site effective Coulomb interaction to bandwidth (U_eff/W_b >> 1) in CDW TMDs, providing robust evidence for the experimentally observed strongly correlated Mott phase. △ Less

Submitted 2 February, 2024; originally announced February 2024.

Comments: 22 pages, 13 figures

Journal ref: Phys. Rev. B 109, 125108 (2024)

Emerging two-dimensional conductivity at Mott-band insulator interface

Authors: I. V. Maznichenko, S. Ostanin, D. Maryenko, V. K. Dugaev, E. Ya. Sherman, P. Buczek, I. Mertig, M. Kawasaki, A. Ernst

Abstract: Intriguingly conducting perovskite interfaces between ordinary band insulators are widely explored, whereas similar interfaces with Mott insulators are still not quite understood. Here we address the (001), (110), and (111) interfaces between the LaTiO$_{3}$ Mott- and large band gap KTaO$_{3}$ insulators. Based on first-principles calculations, we reveal a mechanism of interfacial conductivity, wh… ▽ More Intriguingly conducting perovskite interfaces between ordinary band insulators are widely explored, whereas similar interfaces with Mott insulators are still not quite understood. Here we address the (001), (110), and (111) interfaces between the LaTiO$_{3}$ Mott- and large band gap KTaO$_{3}$ insulators. Based on first-principles calculations, we reveal a mechanism of interfacial conductivity, which is distinct from a formerly studied one applicable to interfaces between polar wide band insulators. Here the key factor causing conductivity is the matching of oxygen octahedra tilting in KTaO$_{3}$ and LaTiO$_{3}$ which, due to a small gap in the LaTiO$_{3}$ results in its sensitivity to the crystal structure, yields metalization of its overlayer and following charge transfer from Ti to Ta. Our findings, also applicable to other Mott insulators interfaces, shed light on the emergence of conductivity observed in LaTiO$_{3}$/KTaO$_{3}$~(110) where the ''polar`` arguments are not applicable and on the emergence of superconductivity in these structures. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Electrical Activity of Topological Chiral Edge Magnons

Authors: Robin R. Neumann, Jürgen Henk, Ingrid Mertig, Alexander Mook

Abstract: Topological magnon insulators support chiral edge excitations, whose lack of electric charge makes them notoriously difficult to detect experimentally. We show that relativistic magnetoelectric coupling universally renders chiral edge magnons electrically active, thereby facilitating electrical probes of magnon topology. Considering a two-dimensional out-of-plane magnetized topological magnon insu… ▽ More Topological magnon insulators support chiral edge excitations, whose lack of electric charge makes them notoriously difficult to detect experimentally. We show that relativistic magnetoelectric coupling universally renders chiral edge magnons electrically active, thereby facilitating electrical probes of magnon topology. Considering a two-dimensional out-of-plane magnetized topological magnon insulator, we predict a fluctuation-activated electric polarization perpendicular to the sample edges. Furthermore, the chiral topological electromagnons give rise to a unique in-gap signal in electrical absorption experiments. These results suggest THz spectroscopy as a promising probe for topological magnons. △ Less

Submitted 19 December, 2023; originally announced December 2023.

Computational design of NDR tunnel diodes with high peak-to-valley current ratio based on two-dimensional cold metals: The case of NbSi$_2$N$_4$/HfSi$_2$N$_4$/NbSi$_2$N$_4$ lateral heterojunction diode

Authors: P. Bodewei, E. Şaşıoğlu, N. F. Hinsche, I. Mertig

Abstract: Cold metals have recently gained attention as a promising platform for innovative devices, such as tunnel diodes with negative differential resistance (NDR) and field-effect transistors with subthreshold swings below the thermionic limit. Recently discovered two-dimensional (2D) MA$_2$Z$_4$ (M = Ti, Zr, Hf, Nb, Ta; A = Si, Ge; Z = N, P) compounds exhibit both cold metallic and semiconducting behav… ▽ More Cold metals have recently gained attention as a promising platform for innovative devices, such as tunnel diodes with negative differential resistance (NDR) and field-effect transistors with subthreshold swings below the thermionic limit. Recently discovered two-dimensional (2D) MA$_2$Z$_4$ (M = Ti, Zr, Hf, Nb, Ta; A = Si, Ge; Z = N, P) compounds exhibit both cold metallic and semiconducting behavior. In this work, we present a computational study of lateral heterojunction tunnel diodes based on 2D NbSi$_2$N$_4$ and HfSi$_2$N$_4$ compounds. Employing density functional theory combined with a nonequilibrium Green function method, we investigate the current-voltage ($I$-$V$) characteristics of lateral tunnel diodes with varying barrier thicknesses in both zigzag and armchair orientations. We find that tunnel diodes in the zigzag orientation exhibit significantly higher peak current densities, while those in the armchair orientation display larger peak-to-valley current ratios (PVCRs) compared to the zigzag orientation. Our findings suggest that MA$_2$Z$_4$ materials are promising candidates for realizing NDR tunnel diodes with high PVCR values, which could have potential applications in memory, logic circuits, and other electronic devices. △ Less

Submitted 18 June, 2024; v1 submitted 13 December, 2023; originally announced December 2023.

Comments: ver3.0 with supplemental material

First-principles prediction of energy band gaps in 18-valence electron semiconducting half-Heusler compounds: Exploring the role of exchange and correlation

Authors: Emel Gurbuz, Murat Tas, Ersoy Sasioglu, Ingrid Mertig, Biplab Sanyal, Iosif Galanakis

Abstract: The choice of exchange functional is a critical factor in determining the energy bandgap of semiconductors. Ab initio calculations using different exchange functionals, including the conventional generalized-gradient approximation (GGA) functionals, meta-GGA functionals, and hybrid functionals, show significant differences in the calculated energy bandgap for semiconducting half-Heusler compounds.… ▽ More The choice of exchange functional is a critical factor in determining the energy bandgap of semiconductors. Ab initio calculations using different exchange functionals, including the conventional generalized-gradient approximation (GGA) functionals, meta-GGA functionals, and hybrid functionals, show significant differences in the calculated energy bandgap for semiconducting half-Heusler compounds. These compounds, which have 18 valence electrons per unit cell, are of great interest due to their thermoelectric properties, making them suitable for energy conversion applications. In addition, accounting for electronic correlations using the GW method also affects the calculated energy bandgaps compared to standard GGA calculations. The variations in calculated energy bandgaps are specific to each material when using different functionals. Hence, a detailed investigation of the electronic properties of each compound is necessary to determine the most appropriate functional for an accurate description of the electronic properties. Our results indicate that no general rules can be established and a comparison with experimental results is required to determine the most appropriate functional. △ Less

Submitted 7 December, 2023; v1 submitted 6 December, 2023; originally announced December 2023.

Journal ref: Journal of Applied Physics 134, 205703 (2023)

Electronic bandstructure of superconducting KTaO3 (111) interfaces

Authors: Srijani Mallik, Börge Göbel, Hugo Witt, Luis M. Vicente-Arche, Sara Varotto, Julien Bréhin, Gerbold Ménard, Guilhem Saïz, Dyhia Tamsaout, Andrés Felipe Santander-Syro, Franck Fortuna, François Bertran, Patrick Le Fèvre, Julien Rault, Isabella Boventer, Ingrid Mertig, Agnès Barthélémy, Nicolas Bergeal, Annika Johansson, Manuel Bibes

Abstract: Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-orbitronics due to their high Rashba spin-orbit coupling (SOC) and gate-voltage tunability. The recent discovery of a superconducting state in KTaO3 2DEGs now expands their potential towards topological superconductivity. Although the band structure of KTaO3 surfaces of various crystallographic orient… ▽ More Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-orbitronics due to their high Rashba spin-orbit coupling (SOC) and gate-voltage tunability. The recent discovery of a superconducting state in KTaO3 2DEGs now expands their potential towards topological superconductivity. Although the band structure of KTaO3 surfaces of various crystallographic orientations has already been mapped using angle-resolved photoemission spectroscopy(ARPES), this is not the case for superconducting KTaO3 2DEGs. Here, we reveal the electronic structure of superconducting 2DEGs based on KTaO3 (111) single crystals through ARPES measurements. We fit the data with a tight-binding model and compute the associated spin textures to bring insight into the SOC-driven physics of this fascinating system. △ Less

Submitted 14 November, 2023; originally announced November 2023.

Comments: 9 pages, 4 figures

Boosting the Edelstein effect of two-dimensional electron gases by ferromagnetic exchange

Authors: Gabriel Lazrak, Börge Göbel, Agnès Barthélémy, Ingrid Mertig, Annika Johansson, Manuel Bibes

Abstract: Strontium titanate (SrTiO$_3$) two-dimensional electron gases (2DEGs) have broken spatial inversion symmetry and possess a finite Rashba spin-orbit coupling. This enables the interconversion of charge and spin currents through the direct and inverse Edelstein effects, with record efficiencies at low temperature, but more modest effects at room temperature. Here, we show that making these 2DEGs fer… ▽ More Strontium titanate (SrTiO$_3$) two-dimensional electron gases (2DEGs) have broken spatial inversion symmetry and possess a finite Rashba spin-orbit coupling. This enables the interconversion of charge and spin currents through the direct and inverse Edelstein effects, with record efficiencies at low temperature, but more modest effects at room temperature. Here, we show that making these 2DEGs ferromagnetic enhances the conversion efficiency by nearly one order of magnitude. Starting from the experimental band structure of non-magnetic SrTiO$_3$ 2DEGs, we mimic magnetic exchange coupling by introducing an out-of-plane Zeeman term in a tight-binding model. We then calculate the band structure and spin textures for increasing internal magnetic fields and compute the Edelstein effect using a semiclassical Boltzmann approach. We find that the conversion efficiency first increases strongly with increasing magnetic field, then shows a maximum and finally decreases. This field dependence is caused by the competition of the exchange coupling with the effective Rashba interaction. While enhancing the splitting of band pairs amplifies the Edelstein effect, weakening the in-plane Rashba-type spin texture reduces it. △ Less

Submitted 5 October, 2023; originally announced October 2023.

Skyrmion motion in magnetic anisotropy gradients: Acceleration caused by deformation

Authors: Ismael Ribeiro de Assis, Ingrid Mertig, Börge Göbel

Abstract: Magnetic skyrmions are nano-sized topologically non-trivial spin textures that can be moved by external stimuli such as spin currents and internal stimuli such as spatial gradients of a material parameter. Since the total energy of a skyrmion depends linearly on most of these parameters, like the perpendicular magnetic anisotropy, the exchange constant, or the Dzyaloshinskii-Moriya interaction str… ▽ More Magnetic skyrmions are nano-sized topologically non-trivial spin textures that can be moved by external stimuli such as spin currents and internal stimuli such as spatial gradients of a material parameter. Since the total energy of a skyrmion depends linearly on most of these parameters, like the perpendicular magnetic anisotropy, the exchange constant, or the Dzyaloshinskii-Moriya interaction strength, a skyrmion will move uniformly in a weak parameter gradient. In this paper, we show that the linear behavior changes once the gradients are strong enough so that the magnetic profile of a skyrmion is significantly altered throughout the propagation. In that case, the skyrmion experiences acceleration and moves along a curved trajectory. Furthermore, we show that when spin-orbit torques and material parameter gradients trigger a skyrmion motion, it can move on a straight path along the current or gradient direction. We discuss the significance of suppressing the skyrmion Hall effect for spintronic and neuromorphic applications of skyrmions. Lastly, we extend our discussion and compare it to a gradient generated by the Dzyaloshinskii-Moriya interaction. △ Less

Submitted 22 August, 2023; originally announced August 2023.

Comments: Marie Skłodowska-Curie Actions, H2020-MSCA-ITN-2020; Project acronym SPEAR; Grant Agreement No. 955671

Journal ref: Physical Review B 108, 144438 (2023)

Ultrafast Orbital Hall Effect in Metallic Nanoribbons

Authors: Oliver Busch, Franziska Ziolkowski, Börge Göbel, Ingrid Mertig, Jürgen Henk

Abstract: The orbital Hall effect can generate currents of angular momentum more efficiently than the spin Hall effect in most metals. However, so far, it has only been understood as a steady state phenomenon. In this theoretical study, the orbital Hall effect is extended into the time domain. We investigate the orbital angular momenta and their currents induced by a femtosecond laser pulse in a Cu nanoribb… ▽ More The orbital Hall effect can generate currents of angular momentum more efficiently than the spin Hall effect in most metals. However, so far, it has only been understood as a steady state phenomenon. In this theoretical study, the orbital Hall effect is extended into the time domain. We investigate the orbital angular momenta and their currents induced by a femtosecond laser pulse in a Cu nanoribbon. Our numerical simulations provide detailed insights into the laser-driven electron dynamics on ultrashort timescales with atomic resolution. The ultrafast orbital Hall effect described in this work is consistent with the familiar pictorial representation of the static orbital Hall effect, but we also find pronounced differences between physical quantities that carry orbital angular momentum and those that carry charge. For example, there are deviations in the time series of the respective currents. This study lays the foundations for investigating ultrafast Hall effects in confined metallic systems. △ Less

Submitted 17 July, 2023; originally announced July 2023.

Spin and orbital Edelstein effect in a bilayer system with Rashba interaction

Authors: Sergio Leiva M., Jürgen Henk, Ingrid Mertig, Annika Johansson

Abstract: The spin Edelstein effect has proven to be a promising phenomenon to generate spin polarization from a charge current in systems without inversion symmetry. In recent years, a current-induced orbital magnetization, called orbital Edelstein effect, has been predicted for various systems with broken inversion symmetry, using the atom-centered approximation and the modern theory of orbital magnetizat… ▽ More The spin Edelstein effect has proven to be a promising phenomenon to generate spin polarization from a charge current in systems without inversion symmetry. In recent years, a current-induced orbital magnetization, called orbital Edelstein effect, has been predicted for various systems with broken inversion symmetry, using the atom-centered approximation and the modern theory of orbital magnetization. In this work, we study the current-induced spin and orbital magnetization for a bilayer system with Rashba interaction, using the modern theory of orbital magnetization and Boltzmann transport theory in relaxation-time approximation. We found that the orbital effect can be significantly larger than the spin effect, depending on the model parameters. Furthermore, the Edelstein response can be enhanced, suppressed, and even reversed, depending on the relation of the effective Rashba parameters of each layer. A sign change of the orbital polarization is related to an interchange of the corresponding layer localization of the states. △ Less

Submitted 16 January, 2024; v1 submitted 6 July, 2023; originally announced July 2023.

Comments: Marie Skłodowska-Curie Actions, H2020-MSCA-ITN-2020; Project acronym SPEAR; Grant Agreement No. 955671 - Revised introduction. - Change unit scale of effective parameters. - Add Appendix A and B. - Correct typos

Journal ref: Phys. Rev. Research 5, 043294 (2023)

Orbital Hall effect and orbital edge states caused by s electrons

Authors: Oliver Busch, Ingrid Mertig, Börge Göbel

Abstract: An orbital current can be generated whenever an object has a translational and rotational degree of freedom. In condensed matter physics, intra-atomic contributions to the transverse orbital transport, labeled orbital Hall effect, rely on propagating wave packets that must consist of hybridized atomic orbitals. However, inter-atomic contributions have to be considered as well because they give ris… ▽ More An orbital current can be generated whenever an object has a translational and rotational degree of freedom. In condensed matter physics, intra-atomic contributions to the transverse orbital transport, labeled orbital Hall effect, rely on propagating wave packets that must consist of hybridized atomic orbitals. However, inter-atomic contributions have to be considered as well because they give rise to a new mechanism for generating orbital currents. As we show, even wave packets consisting purely of s electrons can transport orbital angular momentum if they move on a cycloid trajectory. We introduce the kagome lattice with a single s orbital per atom as the minimal model for the orbital Hall effect and observe the cycloid motion of the electrons in the surface states. △ Less

Submitted 26 September, 2023; v1 submitted 29 June, 2023; originally announced June 2023.

Comments: 6 pages, 4 figures

Journal ref: Physical Review Research 5, 043052 (2023)

Ultrafast Dynamics of Orbital Angular Momentum of Electrons Induced by Femtosecond Laser Pulses: Generation and Transfer Across Interfaces

Authors: Oliver Busch, Franziska Ziolkowski, Ingrid Mertig, Jürgen Henk

Abstract: The orbital angular momenta (OAM) of electrons play an increasingly important role in ultrafast electron and magnetization dynamics. In this theoretical study, we investigate the electron dynamics induced by femtosecond laser pulses in a normal metal, a ferromagnet, and a ferromagnet/normal metal heterostructure. We analyze the spatio-temporal distributions of the laser-induced OAM and their respe… ▽ More The orbital angular momenta (OAM) of electrons play an increasingly important role in ultrafast electron and magnetization dynamics. In this theoretical study, we investigate the electron dynamics induced by femtosecond laser pulses in a normal metal, a ferromagnet, and a ferromagnet/normal metal heterostructure. We analyze the spatio-temporal distributions of the laser-induced OAM and their respective currents. Our findings demonstrate that a circularly polarized laser pulse can induce a sizable and long-lasting OAM component in a normal metal. Furthermore, an interface between a ferromagnet and a normal metal facilitates the demagnetization of the magnet by the OAM contribution to the total magnetization. Finally, to transfer OAM from a ferromagnet into a normal metal, it is advantageous to use a laser setup that induces the desired OAM component in the ferromagnet, but not in the normal metal. △ Less

Submitted 22 June, 2023; originally announced June 2023.

Ultrafast dynamics of electrons excited by femtosecond laser pulses: spin polarization and spin-polarized currents

Authors: Oliver Busch, Franziska Ziolkowski, Ingrid Mertig, Jürgen Henk

Abstract: Laser radiation incident on a ferromagnetic sample produces excited electrons and currents whose spin polarization must not be aligned with the magnetization -- an effect due to spin-orbit coupling that is ubiquitous in spin- and angle-resolved photoemission. In this Paper, we report on a systematic investigation of the dynamics of spin polarization and spin-polarized currents produced by femtosec… ▽ More Laser radiation incident on a ferromagnetic sample produces excited electrons and currents whose spin polarization must not be aligned with the magnetization -- an effect due to spin-orbit coupling that is ubiquitous in spin- and angle-resolved photoemission. In this Paper, we report on a systematic investigation of the dynamics of spin polarization and spin-polarized currents produced by femtosecond laser pulses, modeled within our theoretical framework EVOLVE. The spin polarization depends strongly on the properties of the laser pulse and on the sample composition, as is shown by comparing results for Cu(100), Co(100), and a Co/Cu heterostructure. We find a transition from coherence before the laser pulse's maximum to incoherence thereafter. Moreover, the time dependence of the spin-polarization components induced by spin-orbit coupling differ significantly in Cu and Co: in Cu, we find long-period oscillations with tiny rapid modulations, whereas in Co prominent rapid oscillations with long period ones are superimposed. The pronounced spatial dependencies of the signals underline the importance of inhomogeneities, in particular magnetic/non-magnetic interfaces `act as source' for ultrafast spin-polarization effects. Our investigation provides detailed insight into electron dynamics during and shortly after a femtosecond laser excitation. △ Less

Submitted 16 March, 2023; originally announced March 2023.

Spin-polarized two-dimensional electron/hole gas at the interface of non-magnetic semiconducting half-Heusler compounds: Modified Slater-Pauling rule for half-metallicity at the interface

Authors: Emel Gurbuz, Sukanya Ghosh, Ersoy Sasioglu, Iosif Galanakis, Ingrid Mertig, Biplab Sanyal

Abstract: Half-Heusler compounds with 18 valence electrons per unit cell are well-known non-magnetic semiconductors. Employing first-principles electronic band structure calculations, we study the interface properties of the half-Heusler heterojunctions based on FeVSb, CoTiSb, CoVSn, and NiTiSn compounds, which belong to this category of materials. Our results show that several of these heterojunction inter… ▽ More Half-Heusler compounds with 18 valence electrons per unit cell are well-known non-magnetic semiconductors. Employing first-principles electronic band structure calculations, we study the interface properties of the half-Heusler heterojunctions based on FeVSb, CoTiSb, CoVSn, and NiTiSn compounds, which belong to this category of materials. Our results show that several of these heterojunction interfaces become not only metallic but also magnetic. The emergence of spin-polarization is accompanied by the formation of two-dimensional electron gas (2DEG) or hole gas (2DHG) at the interface. We qualitatively discuss the origin of the spin polarization at the interfaces on the basis of the Stoner model. For the cases of magnetic interfaces where half-metallicity is also present, we propose a modified Slater-Pauling rule similar to the one for bulk half-metallic half-Heusler compounds. Additionally, we calculate exchange parameters, Curie temperatures and magnetic anisotropy energies for magnetic interfaces. Our study, combined with the recent experimental evidence for the presence of 2DEG at CoTiSb/NiTiSn heterojunctions might motivate future efforts and studies toward the experimental realization of devices using the proposed heterojunctions. △ Less

Submitted 9 February, 2023; originally announced February 2023.

Comments: 13 pages, 9 figures

Generation of out-of-plane polarized spin current by spin swap**

Authors: Binoy K. Hazra, Banabir Pal, Jae-Chun Jeon, Robin R. Neumann, Boerge Goebel, Bharat Grover, Hakan Deniz, Andriy Styervoyedov, Holger Meyerheim, Ingrid Mertig, See-Hun Yang, Stuart S. P. Parkin

Abstract: The generation of spin currents and their application to the manipulation of magnetic states is fundamental to spintronics. Of particular interest are chiral antiferromagnets that exhibit properties typical of ferromagnetic materials even though they have negligible magnetization. Here, we report the generation of a robust spin current with both in-plane and out-of-plane spin polarization in epita… ▽ More The generation of spin currents and their application to the manipulation of magnetic states is fundamental to spintronics. Of particular interest are chiral antiferromagnets that exhibit properties typical of ferromagnetic materials even though they have negligible magnetization. Here, we report the generation of a robust spin current with both in-plane and out-of-plane spin polarization in epitaxial thin films of the chiral antiferromagnet Mn3Sn in proximity to permalloy thin layers. By employing temperature-dependent spin-torque ferromagnetic resonance, we find that the chiral antiferromagnetic structure of Mn3Sn is responsible for an in-plane polarized spin current that is generated from the interior of the Mn3Sn layer and whose temperature dependence follows that of this layer's antiferromagnetic order. On the other hand, the out-of-plane spin polarized spin current is unrelated to the chiral antiferromagnetic structure and is instead the result of scattering from the Mn3Sn/permalloy interface. We substantiate the later conclusion by performing studies with several other non-magnetic metals all of which are found to exhibit out-of-plane polarized spin currents arising from the spin swap** effect. △ Less

Submitted 22 November, 2022; originally announced November 2022.

Comments: 17 pages, 4 figures

Ab-initio calculation of the Hubbard $U$ and Hund exchange $J$ in local moment magnets: The case of Mn-based full Heusler compounds

Authors: M. Tas, E. Sasioglu, S. Blugel, I. Mertig, I. Galanakis

Abstract: Mn-based full Heusler compounds possess well-defined local atomic Mn moments, and thus the correlation effects between localized d electrons are expected to play an important role in determining the electronic and magnetic properties of these materials. Employing ab-initio calculations in conjunction with the constrained random-phase approximation (cRPA) method, we calculate the strength of the ef… ▽ More Mn-based full Heusler compounds possess well-defined local atomic Mn moments, and thus the correlation effects between localized d electrons are expected to play an important role in determining the electronic and magnetic properties of these materials. Employing ab-initio calculations in conjunction with the constrained random-phase approximation (cRPA) method, we calculate the strength of the effective on-site Coulomb interaction parameters (Hubbard U and Hund exchange J) in the case of X2MnZ full Heusler compounds with X being one of Ni, Pd or Cu, and Z being one of In, Sn, Sb or Te. We show that the Z element (or sp element) in Heusler compounds significantly reduces the strength of the Hubbard U parameter for Mn 3d electrons compared to the elementary bulk Mn. On the contrary, the effect of the sp-atom on the strength of the U parameter of Ni, Cu or Pd valence d electrons is not so substantial with respect to the elementary bulk values. The U values for all transition metal atoms decrease with increasing sp electron number in the In-Sn-Sb-Te sequence. Our cRPA calculations reveal that despite their well-defined local magnetic moments, the Mn-based full Heusler alloys fall into the category of the weakly correlated materials. △ Less

Submitted 24 October, 2022; originally announced October 2022.

Comments: Physical Review Materials, accepted for publication

Journal ref: Physical Review Materials 6. 114101 (2022)

Biskyrmion-based artificial neuron with refractory period

Authors: Ismael Ribeiro de Assis, Ingrid Mertig, Börge Göbel

Abstract: Magnetic skyrmions are nanoscale magnetic whirls that are highly stable and can be moved by currents which has led to the prediction of a skyrmion-based artificial neuron device with leak-integrate-fire functionality. However, so far, these devices lack a refractory process, estimated to be crucial for neuronal dynamics. Here we demonstrate that a biskyrmion-based artificial neuron overcomes this… ▽ More Magnetic skyrmions are nanoscale magnetic whirls that are highly stable and can be moved by currents which has led to the prediction of a skyrmion-based artificial neuron device with leak-integrate-fire functionality. However, so far, these devices lack a refractory process, estimated to be crucial for neuronal dynamics. Here we demonstrate that a biskyrmion-based artificial neuron overcomes this insufficiency. When driven by spin-orbit torques, a single biskyrmion splits into two subskyrmions that move towards a designated location and can be detected electrically, resembling the excitation process of a neuron that fires ultimately. The attractive interaction of the two skyrmions leads to a unique trajectory: Once they reach the detector area, they automatically return to the center to reform the biskyrmion but on a different path. During this reset period, the neuron cannot fire again. Our suggested device resembles a biological neuron with the leak, integrate, fire and refractory characteristics better than all existing artificial devices so far. △ Less

Submitted 14 November, 2022; v1 submitted 22 September, 2022; originally announced September 2022.

Comments: Marie Skłodowska-Curie Actions, H2020-MSCA-ITN-2020; Project acronym SPEAR; Grant Agreement No. 955671

Journal ref: Neuromorphic Computing and Engineering 3, 014012 (2023)

Direct visualization of Rashba-split bands and spin/orbital-charge interconversion at KTaO$_3$ interfaces

Authors: Sara Varotto, Annika Johansson, Börge Göbel, Luis M. Vicente-Arche, Srijani Mallik, Julien Bréhin, Raphaël Salazar, François Bertran, Patrick Le Fèvre, Nicolas Bergeal, Julien Rault, Ingrid Mertig, Manuel Bibes

Abstract: Rashba interfaces have emerged as promising platforms for spin-charge interconversion through the direct and inverse Edelstein effects. Notably, oxide-based two-dimensional electron gases (2DEGs) display a large and gate-tunable conversion efficiency, as determined by transport measurements. However, a direct visualization of the Rashba-split bands in oxide 2DEGs is lacking, which hampers an advan… ▽ More Rashba interfaces have emerged as promising platforms for spin-charge interconversion through the direct and inverse Edelstein effects. Notably, oxide-based two-dimensional electron gases (2DEGs) display a large and gate-tunable conversion efficiency, as determined by transport measurements. However, a direct visualization of the Rashba-split bands in oxide 2DEGs is lacking, which hampers an advanced understanding of their rich spin-orbit physics. Here, we investigate KTaO$_3$-2DEGs and evidence their Rashba-split bands using angle resolved photoemission spectroscopy. Fitting the bands with a tight-binding Hamiltonian, we extract the effective Rashba coefficient and bring insight into the complex multiorbital nature of the band structure. Our calculations reveal unconventional spin and orbital textures, showing compensation effects from quasi-degenerate band pairs which strongly depend on in-plane anisotropy. We compute the band-resolved spin and orbital Edelstein effects, and predict interconversion efficiencies exceeding those of other oxide 2DEGs. Finally, we suggest design rules for Rashba systems to optimize spin-charge interconversion performance. △ Less

Submitted 18 July, 2022; originally announced July 2022.

Proposal for semiconductor-free negative differential resistance tunnel diode with ultra-high peak-to-valley current ratio

Authors: Ersoy Sasioglu, Ingrid Mertig

Abstract: The negative differential resistance (NDR) tunnel diodes are promising alternative devices for beyond-CMOS computing as they offer several potential applications when integrated with transistors. We propose a novel semiconductor-free NDR tunnel diode concept that exhibits an ultra-high peak-to-valley current ratio (PVCR) value. Our proposed NDR diode consists of two cold metal electrodes separated… ▽ More The negative differential resistance (NDR) tunnel diodes are promising alternative devices for beyond-CMOS computing as they offer several potential applications when integrated with transistors. We propose a novel semiconductor-free NDR tunnel diode concept that exhibits an ultra-high peak-to-valley current ratio (PVCR) value. Our proposed NDR diode consists of two cold metal electrodes separated by a thin insulating tunnel barrier. The NDR effect stems from the unique electronic band structure of the cold metal electrodes, i.e., the width of the isolated metallic bands around the Fermi level as well as the energy gaps separating higher- and lower-lying bands determine the current-voltage ($I$-$V$) characteristics and the PVCR value of the tunnel diode. By proper choice of the cold metal electrode materials, either a conventional N-type or $Λ$-type NDR effect can be obtained. Two-dimensional (2D) materials offer a unique platform for the realization of proposed NDR tunnel diodes. To demonstrate the proof of concept we employ the nonequilibrium Green function method combined with density functional theory to calculate the $I$-$V$ characteristic of the lateral (AlI$_2$/MgI$_2$/AlI$_2$) and vertical (NbS$_2$/h-BN/NbS$_2$) heterojunction tunnel diodes based on 2D cold metals. For the lateral tunnel diode, we obtain a $Λ$-type NDR effect with an ultra-high PVCR value of 10$^{16}$ at room temperature, while the vertical tunnel diode exhibits a conventional N-type NDR effect with a smaller PVCR value of about 10$^4$. The proposed concept provides a semiconductor-free solution for NDR devices to achieve desired $I$-$V$ characteristics with ultra-high PVCR values for memory and logic applications. △ Less

Submitted 25 October, 2022; v1 submitted 6 July, 2022; originally announced July 2022.

Comments: 9 pages, 6 figures

Ultrafast spin dynamics: complementing theoretical analyses by quantum-information measures

Authors: Franziska Ziolkowski, Oliver Busch, Ingrid Mertig, Jürgen Henk

Abstract: Theoretical analyses of ultrafast spin dynamics commonly address and discuss simulated phenomena by means of observables, whereas in quantum information theory one often utilizes measures of quantum states. In this Paper we report on possible benefits of quantum information measures in simulations of ultrafast spin dynamics. For Co/Cu heterostructures illuminated by femtosecond laser pulses, we di… ▽ More Theoretical analyses of ultrafast spin dynamics commonly address and discuss simulated phenomena by means of observables, whereas in quantum information theory one often utilizes measures of quantum states. In this Paper we report on possible benefits of quantum information measures in simulations of ultrafast spin dynamics. For Co/Cu heterostructures illuminated by femtosecond laser pulses, we discuss the general behaviour of quantum information measures, in particular distances in Hilbert space and degrees of mixing in the density matrix. The measures are in particular sensitive to variations of the polarization of a laser pulse and the sample composition. Moreover, they are closely related to magnetization and number of excited electrons. △ Less

Submitted 6 April, 2022; originally announced April 2022.

$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect

Authors: T. Aull, E. Şaşıoğlu, N. F. Hinsche, I. Mertig

Abstract: Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have been suggested as ideal electrode materials for MTJs to achieve an extremely large tunnel-magnetoresistance (TMR) effect. Despite their high TMR ratios, MTJs based… ▽ More Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have been suggested as ideal electrode materials for MTJs to achieve an extremely large tunnel-magnetoresistance (TMR) effect. Despite their high TMR ratios, MTJs based on HMMs do not exhibit current rectification, i.e., a diode effect, which was achieved in a magnetic tunnel junction concept based on HMMs and type-II spin-gapless semiconductors (SGSs). The proposed concept has recently been experimentally demonstrated using Heusler compounds. In the present work, we investigate from first-principles MTJs based on type-II SGS and HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb. Our $ab$ $initio$ quantum transport calculations based on a nonequilibrium Green's function method have demonstrated that the MTJs under consideration exhibit current rectification with relatively high on:off ratios. We show that, in contrast to conventional semiconductor diodes, the rectification bias voltage window (or breakdown voltage) of the MTJs is limited by the spin gap of the HMM and SGS Heusler compounds. A unique feature of the present MTJs is that the diode effect can be configured dynamically, i.e., depending on the relative orientation of the magnetization of the electrodes, the MTJ allows the electrical current to pass either in one or the other direction, which leads to an inverse TMR effect. The combination of nonvolatility, reconfigurable diode functionality, tunable rectification voltage window, and high Curie temperature of the electrode materials makes the proposed MTJs very promising for room-temperature spintronic applications and opens ways to magnetic memory and logic concepts as well as logic-in-memory computing. △ Less

Submitted 2 September, 2022; v1 submitted 14 February, 2022; originally announced February 2022.

Comments: 14+7 pages, 7+10 figures

Magnon-Polaron Driven Thermal Hall Effect in a Heisenberg-Kitaev Antiferromagnet

Authors: N. Li, R. R. Neumann, S. K. Guang, Q. Huang, J. Liu, K. Xia, X. Y. Yue, Y. Sun, Y. Y. Wang, Q. J. Li, Y. Jiang, J. Fang, Z. Jiang, X. Zhao, A. Mook, J. Henk, I. Mertig, H. D. Zhou, X. F. Sun

Abstract: The thermal Hall effect, defined as a heat current response transversal to an applied temperature gradient, is a central experimental probe of exotic electrically insulating phases of matter. A key question is how the interplay between magnetic and structural degrees of freedom gives rise to a nonzero thermal Hall conductivity (THC). Here, we present evidence for an intrinsic thermal Hall effect i… ▽ More The thermal Hall effect, defined as a heat current response transversal to an applied temperature gradient, is a central experimental probe of exotic electrically insulating phases of matter. A key question is how the interplay between magnetic and structural degrees of freedom gives rise to a nonzero thermal Hall conductivity (THC). Here, we present evidence for an intrinsic thermal Hall effect in the Heisenberg-Kitaev antiferromagnet and spin-liquid candidate Na$_2$Co$_2$TeO$_6$ brought about by the quantum-geometric Berry curvature of so-called magnon polarons, resulting from magnon-phonon hybridization. At low temperatures, our field- and temperature-dependent measurements show a negative THC for magnetic fields below 10 T and a sign change to positive THC above. Theoretically, the sign and the order of magnitude of the THC cannot be solely explained with magnetic excitations. We demonstrate that, by incorporating spin-lattice coupling into our theoretical calculations, the Berry curvature of magnon polarons counteracts the purely magnonic contribution, reverses the overall sign of the THC, and increases its magnitude, which significantly improves agreement with experimental data. Our work highlights the crucial role of spin-lattice coupling in the thermal Hall effect. △ Less

Submitted 27 February, 2023; v1 submitted 27 January, 2022; originally announced January 2022.

Comments: 19 pages, 4 figures

Gate-tuneable and chirality-dependent charge-to-spin conversion in Tellurium nanowires

Authors: Francesco Calavalle, Manuel Suárez-Rodríguez, Beatriz Martín-García, Annika Johansson, Diogo C. Vaz, Haozhe Yang, Igor V. Maznichenko, Sergey Ostanin Aurelio Mateo-Alonso, Andrey Chuvilin, Ingrid Mertig, Marco Gobbi, Fèlix Casanova, Luis E. Hueso

Abstract: Chiral materials are the ideal playground for exploring the relation between symmetry, relativistic effects, and electronic transport. For instance, chiral organic molecules have been intensively studied to electrically generate spin-polarized currents in the last decade, but their poor electronic conductivity limits their potential for applications. Conversely, chiral inorganic materials such as… ▽ More Chiral materials are the ideal playground for exploring the relation between symmetry, relativistic effects, and electronic transport. For instance, chiral organic molecules have been intensively studied to electrically generate spin-polarized currents in the last decade, but their poor electronic conductivity limits their potential for applications. Conversely, chiral inorganic materials such as Tellurium are excellent electrical transport materials, but have not been explored to enable the electrical control of spin polarization in devices. Here, we demonstrate the all-electrical generation, manipulation, and detection of spin polarization in chiral single-crystalline Tellurium nanowires. By recording a large (up to 7%) and chirality-dependent unidirectional magnetoresistance, we show that the orientation of the electrically generated spin polarization is determined by the nanowire handedness and uniquely follows the current direction, while its magnitude can be manipulated by an electrostatic gate. Our results pave the way for the development of magnet-free chirality-based spintronic devices. △ Less

Submitted 2 January, 2022; originally announced January 2022.

Externally controlled and switchable 2D electron gas at the Rashba interface between ferroelectrics and heavy $d$ metals

Authors: Thorsten Aull, Igor V. Maznichenko, Sergey Ostanin, Ersoy Şaşıoğlu, Ingrid Mertig

Abstract: Strong spin-orbit coupling in noncentrosymmetric materials and interfaces results in remarkable physical phenomena, such as nontrivial spin textures, which may exhibit Rashba, Dresselhaus, and other intricated configurations. This provides a promising basis for nonvolatile spintronic devices and further implications. Here, we simulate from first principles a two-dimensional electron gas in ultrath… ▽ More Strong spin-orbit coupling in noncentrosymmetric materials and interfaces results in remarkable physical phenomena, such as nontrivial spin textures, which may exhibit Rashba, Dresselhaus, and other intricated configurations. This provides a promising basis for nonvolatile spintronic devices and further implications. Here, we simulate from first principles a two-dimensional electron gas in ultrathin platinum and palladium layers grown on ferroelectric PbTiO$_3$(001). The latter allows, in principle, to switch and control the spin-to-charge conversion by the polarization reversal. We show how the band structure and its Rashba splitting differ in the Pt and Pd overlayers and how these electronic features change with increasing the overlayer thickness and upon reversal of polarization. Besides, for both overlayers, we simulated their current-voltage ($I-V$) characteristics, the resistance of which upon the polarization reversal changes between 20% and several hundred percent. The reported findings can be used to model directly the Rashba-Edelstein effect. △ Less

Submitted 8 November, 2021; v1 submitted 5 November, 2021; originally announced November 2021.

Comments: 12 pages, 11 figures

Journal ref: Phys. Rev. Research 3, 043110 (2021)

Thermal Hall effect of magnons in collinear antiferromagnetic insulators: signatures of magnetic and topological phase transitions

Authors: Robin R. Neumann, Alexander Mook, Jürgen Henk, Ingrid Mertig

Abstract: We demonstrate theoretically that the thermal Hall effect of magnons in collinear antiferromagnetic insulators is an indicator of magnetic and topological phase transitions in the magnon spectrum. The transversal heat current of magnons caused by a thermal gradient is calculated for an antiferromagnet on a honeycomb lattice. An applied magnetic field drives the system from the antiferromagnetic ph… ▽ More We demonstrate theoretically that the thermal Hall effect of magnons in collinear antiferromagnetic insulators is an indicator of magnetic and topological phase transitions in the magnon spectrum. The transversal heat current of magnons caused by a thermal gradient is calculated for an antiferromagnet on a honeycomb lattice. An applied magnetic field drives the system from the antiferromagnetic phase via a spin-flop phase into the field-polarized phase. Besides these magnetic phase transitions we find topological phase transitions within the spin-flop phase. Both types of transitions manifest themselves in prominent and distinguishing features in the thermal conductivities; depending on the temperature, the conductivity changes by several orders of magnitude, providing a tool to discern experimentally the two types of phase transitions. We include numerical results for the van der Waals magnet MnPS$_3$. △ Less

Submitted 1 September, 2021; originally announced September 2021.

Atomic scale control of spin current transmission at interfaces

Authors: Mohamed Amine Wahada, Ersoy Sasioglu, Wolfgang Hoppe, Xilin Zhou, Hakan Deniz, Reza Rouzegar, Tobias Kampfrath, Ingrid Mertig, Stuart S. P. Parkin, Georg Woltersdorf

Abstract: Spin transmission at ferromagnet/heavy metal interfaces is of vital importance for many spintronic devices. Usually the spin current transmission is limited by the spin mixing conductance and loss mechanisms such as spin memory loss. In order to understand these effects, we study the interface transmission when an insulating interlayer is inserted between the ferromagnet and the heavy metal. For t… ▽ More Spin transmission at ferromagnet/heavy metal interfaces is of vital importance for many spintronic devices. Usually the spin current transmission is limited by the spin mixing conductance and loss mechanisms such as spin memory loss. In order to understand these effects, we study the interface transmission when an insulating interlayer is inserted between the ferromagnet and the heavy metal. For this we measure the inverse spin Hall voltage generated from optically injected spin current pulses as well as the magnitude of the spin pum** using ferromagnetic resonance. From our results we conclude that significant spin memory loss only occurs for 5d metals with less than half filled d-shell. △ Less

Submitted 3 August, 2021; originally announced August 2021.

Control of ultrashort spin current pulses in metallic multilayers

Authors: Alexey Melnikov, Liane Brandt, Niklas Liebing, Mirko Ribow, Ingrid Mertig, Georg Woltersdorf

Abstract: We study the emission of femtosecond spin current pulses at Fe/Au interfaces. Using optical second harmonic generation we demonstrate the control of pulse shape and duration by varying the emitter thickness and show that it is determined by the parameters of hot electrons emission and the diffusive transport. Using a simple model of electron emission we develop a description of superdiffusive spin… ▽ More We study the emission of femtosecond spin current pulses at Fe/Au interfaces. Using optical second harmonic generation we demonstrate the control of pulse shape and duration by varying the emitter thickness and show that it is determined by the parameters of hot electrons emission and the diffusive transport. Using a simple model of electron emission we develop a description of superdiffusive spin transport in Au allowing to extract electron velocity and scattering rates from the experimental data. The importance of carrier multiplication in Fe is demonstrated. △ Less

Submitted 29 June, 2021; originally announced June 2021.

Quaternary-digital data storage based on magnetic bubbles in anisotropic materials

Authors: Börge Göbel, Ingrid Mertig

Abstract: The topologically non-trivial nano-whirls, called magnetic skyrmions, are often considered attractive for spintronic applications like the racetrack data storage device. However, skyrmions do not move parallel to applied currents and typically do not coexist with other nano-objects, making the realization of such storage concepts difficult. Herein we consider materials with an anisotropic DMI, lik… ▽ More The topologically non-trivial nano-whirls, called magnetic skyrmions, are often considered attractive for spintronic applications like the racetrack data storage device. However, skyrmions do not move parallel to applied currents and typically do not coexist with other nano-objects, making the realization of such storage concepts difficult. Herein we consider materials with an anisotropic DMI, like tetragonal Heusler materials, and show that four distinct types of topologically trivial bubbles can coexist. We show that each of them can be written by spin torques and that they can be distinguished using a single magnetic tunneling junction. Due to their trivial topology, the four types of bubbles move parallel to applied electrical currents and remain equidistant under motion. Still, the bubbles have a small size and high stability comparable to topologically non-trivial spin textures. This allows to construct a quaternary-digit-based racetrack storage device that overcomes the two mentioned drawbacks of skyrmion-based racetracks. △ Less

Submitted 25 June, 2021; v1 submitted 3 June, 2021; originally announced June 2021.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. Applied 15, 064052 (2021)

Colossal topological Hall effect at the transition between isolated and lattice-phase interfacial skyrmions

Authors: M. Raju, A. P. Petrović, A. Yagil, K. S. Denisov, N. K. Duong, B. Göbel, E. Şaşıoğlu, O. M. Auslaender, I. Mertig, I. V. Rozhansky, C. Panagopoulos

Abstract: The topological Hall effect is used extensively to study chiral spin textures in various materials. However, the factors controlling its magnitude in technologically-relevant thin films remain uncertain. Using variable temperature magnetotransport and real-space magnetic imaging in a series of Ir/Fe/Co/Pt heterostructures, here we report that the chiral spin fluctuations at the phase boundary betw… ▽ More The topological Hall effect is used extensively to study chiral spin textures in various materials. However, the factors controlling its magnitude in technologically-relevant thin films remain uncertain. Using variable temperature magnetotransport and real-space magnetic imaging in a series of Ir/Fe/Co/Pt heterostructures, here we report that the chiral spin fluctuations at the phase boundary between isolated skyrmions and a disordered skyrmion lattice result in a power-law enhancement of the topological Hall resistivity by up to three orders of magnitude. Our work reveals the dominant role of skyrmion stability and configuration in determining the magnitude of the topological Hall effect. △ Less

Submitted 17 May, 2021; originally announced May 2021.

Comments: 10 pages, 3 figures

Journal ref: Nat Commun 12, 2758 (2021)

Strength of effective Coulomb interaction in two-dimensional transition-metal Halides MX$_2$ and MX$_3$ (M=Ti, V, Cr, Mn, Fe, Co, Ni; X=Cl, Br, I)

Authors: Y. Yekta, H. Hadipour, E. Sasioglu, C. Friedrich, S. A. Jafari, S. Bluegel, I. Mertig

Abstract: We calculate the strength of the effective onsite Coulomb interaction (Hubbard $U$) in two-dimensional (2D) transition-metal (TM) dihalides MX$_2$ and trihalides MX$_3$ (M=Ti, V, Cr, Mn, Fe, Co, Ni; X=Cl, Br, I) from first principles using the constrained random-phase approximation. The correlated subspaces are formed from $t_{2g}$ or $e_g$ bands at the Fermi energy. Elimination of the efficient s… ▽ More We calculate the strength of the effective onsite Coulomb interaction (Hubbard $U$) in two-dimensional (2D) transition-metal (TM) dihalides MX$_2$ and trihalides MX$_3$ (M=Ti, V, Cr, Mn, Fe, Co, Ni; X=Cl, Br, I) from first principles using the constrained random-phase approximation. The correlated subspaces are formed from $t_{2g}$ or $e_g$ bands at the Fermi energy. Elimination of the efficient screening taking place in these narrow bands gives rise to sizable interaction parameters U between the localized $t_{2g}$ ($e_g$) electrons. Due to this large Coulomb interaction, we find $U/W >1$ (with the band width $W$) in most TM halides, making them strongly correlated materials. Among the metallic TM halides in paramagnetic state, the correlation strength $U/W$ reaches a maximum in NiX$_2$ and CrX$_3$ with values much larger than the corresponding values in elementary TMs and other TM compounds. Based on the Stoner model and the calculated $U$ and $J$ values, we discuss the tendency of the electron spins to order ferromagnetically. △ Less

Submitted 11 May, 2021; originally announced May 2021.

Journal ref: Phys. Rev. Materials, 5 (2021) 034001

Local spin Hall conductivity

Authors: Tomáš Rauch, Franziska Töpler, Ingrid Mertig

Abstract: The spin Hall conductivity is usually calculated for periodic solids, while the knowledge of local contributions from inhomogeneous regions like interfaces or surfaces would be desirable. In this work we derive a local expression for the spin Hall conductivity of two-dimensional systems in analogy to the local anomalous Hall conductivity discussed recently. Our approach is applicable to heterogene… ▽ More The spin Hall conductivity is usually calculated for periodic solids, while the knowledge of local contributions from inhomogeneous regions like interfaces or surfaces would be desirable. In this work we derive a local expression for the spin Hall conductivity of two-dimensional systems in analogy to the local anomalous Hall conductivity discussed recently. Our approach is applicable to heterogeneous fully bounded systems and nanoribbons with both open and periodic boundary conditions. △ Less

Submitted 7 May, 2021; originally announced May 2021.

Journal ref: Phys. Rev. B 101, 064206 (2020)

First principles design of Ohmic spin diodes based on quaternary Heusler compounds

Authors: T. Aull, E. Şaşıoğlu, I. Mertig

Abstract: The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applications as these materials possess very high Curie temperatures as well as half-metallic and spin-gapless semiconducting behavior within the same family… ▽ More The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applications as these materials possess very high Curie temperatures as well as half-metallic and spin-gapless semiconducting behavior within the same family. Using state-of-the-art first-principles calculations combined with the non-equilibrium Green's function method we design four different OSDs based on half-metallic and spin-gapless semiconducting quaternary Heusler compounds. All four OSDs exhibit linear current-voltage ($I-V$) characteristics with zero threshold voltage $V_T$. We show that these OSDs possess a small leakage current, which stems from the overlap of the conduction and valence band edges of opposite spin channels around the Fermi level in the SGS electrodes. The obtained on/off current ratios vary between $30$ and $10^5$. Our results can pave the way for the experimental fabrication of the OSDs within the family of ordered quaternary Heusler compounds. △ Less

Submitted 3 February, 2021; originally announced February 2021.

Comments: 7 pages, 5 figures

Journal ref: Appl. Phys. Lett. 118, 052405 (2021)

Ultrafast spin dynamics in inhomogeneous systems: a density-matrix approach applied to Co/Cu interfaces

Authors: Franziska Töpler, Jürgen Henk, Ingrid Mertig

Abstract: Ultrafast spin dynamics on femto- to picosecond timescales is simulated within a density-operator approach for a Co/Cu bilayer. The electronic structure is represented in a tight-binding form; during the evolution of the density operator, optical excitation by a femtosecond laser pulse, coupling to a bosonic bath as well as dephasing are taken into account. Our simulations corroborate the importan… ▽ More Ultrafast spin dynamics on femto- to picosecond timescales is simulated within a density-operator approach for a Co/Cu bilayer. The electronic structure is represented in a tight-binding form; during the evolution of the density operator, optical excitation by a femtosecond laser pulse, coupling to a bosonic bath as well as dephasing are taken into account. Our simulations corroborate the importance of interfaces for ultrafast transport phenomena and demagnetisation processes. Moreover, we establish a reflow from Cu $d$ orbitals across the interface into Co $d$ orbitals, which shows up prominently in the mean occupation numbers. On top of this, this refilling manifests itself as a minority-spin current proceeding several layers into the Cu region. The present study suggests that the approach captures essential ultrafast phenomena and provides insight into microscopic processes. △ Less

Submitted 27 November, 2020; originally announced November 2020.

Comments: 16 pages, 5 figures

Journal ref: New J. Phys. 23 033042 (2021)

Skyrmion ratchet propagation: Utilizing the skyrmion Hall effect in AC racetrack storage devices

Authors: Börge Göbel, Ingrid Mertig

Abstract: Magnetic skyrmions are whirl-like nano-objects with topological protection. When driven by direct currents (DC), skyrmions move but experience a transverse deflection. This so-called skyrmion Hall effect is often regarded a drawback for memory applications. Herein, we show that this unique effect can also be favorable for spintronic applications: We show that in a racetrack with a broken inversion… ▽ More Magnetic skyrmions are whirl-like nano-objects with topological protection. When driven by direct currents (DC), skyrmions move but experience a transverse deflection. This so-called skyrmion Hall effect is often regarded a drawback for memory applications. Herein, we show that this unique effect can also be favorable for spintronic applications: We show that in a racetrack with a broken inversion symmetry, the skyrmion Hall effect allows to translate an alternating current (AC) into a directed motion along the track, like in a ratchet. We analyze several modes of the ratchet mechanism and show that it is unique for topological magnetic whirls. We elaborate on the fundamental differences compared to the motion of topologically trivial magnetic objects, as well as classical particles driven by periodic forces. Depending on the exact racetrack geometry, the ratchet mechanism can be soft or strict. In the latter case, the skyrmion propagates close to the efficiency maximum. △ Less

Submitted 18 November, 2020; originally announced November 2020.

Comments: 9 pages, 6 figures

Journal ref: Scientific Reports 11, 3020 (2021)

Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions

Authors: Lukáš Nadvorník, Martin Borchert, Liane Brandt, Richard Schlitz, Koen A. de Mare, Karel Výborný, Ingrid Mertig, Gerhard Jakob, Matthias Kläui, Sebastian T. B. Goennenwein, Martin Wolf, Georg Woltersdorf, Tobias Kampfrath

Abstract: Anisotropic magnetoresistance (AMR) is a ubiquitous and versatile probe of magnetic order in contemporary spintronics research. Its origins are usually ascribed to extrinsic effects (i.e. spin-dependent electron scattering), whereas intrinsic (i.e. scattering-independent) contributions are neglected. Here, we measure AMR of polycrystalline thin films of the standard ferromagnets Co, Ni, Ni81Fe19 a… ▽ More Anisotropic magnetoresistance (AMR) is a ubiquitous and versatile probe of magnetic order in contemporary spintronics research. Its origins are usually ascribed to extrinsic effects (i.e. spin-dependent electron scattering), whereas intrinsic (i.e. scattering-independent) contributions are neglected. Here, we measure AMR of polycrystalline thin films of the standard ferromagnets Co, Ni, Ni81Fe19 and Ni50Fe50 over the frequency range from DC to 28 THz. The large bandwidth covers the regimes of both diffusive and ballistic intraband electron transport and, thus, allows us to separate extrinsic and intrinsic AMR components. Analysis of the THz response based on Boltzmann transport theory reveals that the AMR of the Ni, Ni81Fe19 and Ni50Fe50 samples is of predominantly extrinsic nature. However, the Co thin film exhibits a sizeable intrinsic AMR contribution, which is constant up to 28 THz and amounts to more than 2/3 of the DC AMR contrast of 1%. These features are attributed to the hexagonal structure of the Co crystallites. They are interesting for applications in terahertz spintronics and terahertz photonics. Our results show that broadband terahertz electromagnetic pulses provide new and contact-free insights into magneto-transport phenomena of standard magnetic thin films on ultrafast time scales. △ Less

Submitted 1 March, 2021; v1 submitted 13 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. X 11, 021030 (2021)

Atomic scale spectral control of thermal transport in phononic crystal superlattices

Authors: D. Meyer, V. Roddatis, J. P. Bange, S. Lopatin, M. Keunecke, D. Metternich, U. Roß, I. V. Maznichenko, S. Ostanin, I. Mertig, V. Radisch, R. Egoavil, I. Lazić, V. Moshnyaga, H. Ulrichs

Abstract: We present experimental and theoretical investigations of phonon thermal transport in (LaMnO$_3$)$_m$/(SrMnO$_3$)$_n$ superlattices (LMO/SMO SLs) with the thickness of individual layers $m,n = 3 - 10\;$ u.c. and the thickness ratio $m/n = 1, 2$. Optical transient thermal reflectivity measurements reveal a pronounced difference in the thermal conductivity between SLs with $m/n = 1$, and SLs with… ▽ More We present experimental and theoretical investigations of phonon thermal transport in (LaMnO$_3$)$_m$/(SrMnO$_3$)$_n$ superlattices (LMO/SMO SLs) with the thickness of individual layers $m,n = 3 - 10\;$ u.c. and the thickness ratio $m/n = 1, 2$. Optical transient thermal reflectivity measurements reveal a pronounced difference in the thermal conductivity between SLs with $m/n = 1$, and SLs with $m/n = 2$. State-of-the art electron microscopy techniques and ab-initio density functional calculations enables us to assign the origin of this difference to the absence ($m/n = 1$) or presence ($m/n = 2$) of spatially periodic, static oxygen octahedral rotation (OOR) inside the LMO layers. The experimental data analysis shows that the effective thermal conductance of the LMO/SMO interfaces strongly changes from $0.3$ GW/m$^2$K for $m/n = 2$ SLs with OOR to a surprisingly large value of $1.8$ GW/m$^2$K for $m/n = 1$ SLs without OOR. An instructive lattice dynamical model rationalizes our experimental findings as a result of coherent phonon transmission for $m/n = 1$ versus coherent phonon blocking in SLs with $m/n = 2$. We briefly discuss the possibilities to exploit these results for atomic-scale engineering of a crystalline phonon insulator. The thermal resistivity of this proposal for a thermal metamaterial surpasses the amorphous limit, although phonons still propagate coherently. △ Less

Submitted 12 July, 2021; v1 submitted 30 September, 2020; originally announced September 2020.

Comments: Revision changes article focus from structural properties to thermal transport properties of SL

Half-Metal Spin-Gapless Semiconductor Junctions as a Route to the Ideal Diode

Authors: E. Şaşıoğlu, T. Aull, D. Kutschabsky, S. Blügel, I. Mertig

Abstract: The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse bias. However, real diodes have a junction barrier that electrons have to overcome and thus they have a threshold voltage $V_T$, which must be supplied to the diode to turn it on. This threshold voltage gives rise to powe… ▽ More The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse bias. However, real diodes have a junction barrier that electrons have to overcome and thus they have a threshold voltage $V_T$, which must be supplied to the diode to turn it on. This threshold voltage gives rise to power dissipation in the form of heat and hence is an undesirable feature. In this work, based on half-metallic magnets and spin-gapless semiconductors we propose a diode concept that does not have a junction barrier and the operation principle of which relies on the spin-dependent transport properties of the HMM and SGS materials. We show that the HMM and SGS materials form an Ohmic contact under any finite forward bias, while for a reverse bias the current is blocked due to spin-dependent filtering of the electrons. Thus, the HMM-SGS junctions act as a diode with zero threshold voltage $V_T$, and linear $I-V$ characteristics as well as an infinite on:off ratio at zero temperature. However, at finite temperatures, non-spin-flip thermally excited high-energy electrons as well as low-energy spin-flip excitations can give rise to a leakage current and thus reduce the on:off ratio under a reverse bias. Furthermore, a zero threshold voltage allows one to detect extremely weak signals and due to the Ohmic HMM-SGS contact, the proposed diode has a much higher current drive capability and low resistance, which is advantageous compared to conventional semiconductor diodes. We employ the NEGF method combined with DFT to demonstrate the linear $I-V$ characteristics of the proposed diode based on two-dimensional half-metallic Fe/MoS$_2$ and spin-gapless semiconducting VS$_2$ planar heterojunctions. △ Less

Submitted 22 September, 2020; originally announced September 2020.

Comments: 12 pages, 9 figures

Journal ref: Phys. Rev. Applied 14, 014082 (2020)

Determining the Rashba parameter from the bilinear magnetoresistance response in a two-dimensional electron gas

Authors: D. C. Vaz, F. Trier, A. Dyrdał, A. Johansson, K. Garcia, A. Barthélémy, I. Mertig, J. Barnaś, A. Fert, M. Bibes

Abstract: Two-dimensional (2D) Rashba systems have been intensively studied in the last decade due to their unconventional physics, tunability capabilities, and potential for spin-charge interconversion when compared to conventional heavy metals. With the advent of a new generation of spin-based logic and memory devices, the search for Rashba systems with more robust and larger conversion efficiencies is ex… ▽ More Two-dimensional (2D) Rashba systems have been intensively studied in the last decade due to their unconventional physics, tunability capabilities, and potential for spin-charge interconversion when compared to conventional heavy metals. With the advent of a new generation of spin-based logic and memory devices, the search for Rashba systems with more robust and larger conversion efficiencies is expanding. Conventionally, demanding techniques such as angle- and spin-resolved photoemission spectroscopy are required to determine the Rashba parameter $α_{R}$ that characterizes these systems. Here, we introduce a simple method that allows a quantitative extraction of $α_{R}$, through the analysis of the bilinear response of angle-dependent magnetotransport experiments. This method is based on the modulation of the Rashba-split bands under a rotating in-plane magnetic field. We show that our method is able to correctly yield the value of $α_{R}$ for a wide range of Fermi energies in the 2D electron gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface. By applying a gate voltage, we observe a maximum $α_{R}$ in the region of the band structure where interband effects maximize the Rashba effect, consistently with theoretical predictions. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Journal ref: Published on July 2, 2020 as Phys. Rev. Materials 4, 071001(R) (2020)

Spin and orbital Edelstein effect in an oxide two-dimensional electron gas: theory and application to AlO$_x$/SrTiO$_{3}$

Authors: Annika Johansson, Börge Göbel, Jürgen Henk, Manuel Bibes, Ingrid Mertig

Abstract: The Edelstein effect provides the purely electrical generation and control of a homogeneous magnetization in primarily nonmagnetic materials with broken inversion symmetry. Usually, only the spin density response to an external electric field is discussed. Here, we report on the electrically induced magnetization containing spin as well as orbital contributions in the topological oxide two-dimensi… ▽ More The Edelstein effect provides the purely electrical generation and control of a homogeneous magnetization in primarily nonmagnetic materials with broken inversion symmetry. Usually, only the spin density response to an external electric field is discussed. Here, we report on the electrically induced magnetization containing spin as well as orbital contributions in the topological oxide two-dimensional electron gas at the interface between SrTiO$_3$ and AlO. We find that in this particular system the orbital Edelstein effect exceeds the spin Edelstein effect by more than one order of magnitude. The main reason are orbital moments of different magnitude in the Rashba-like-split band pairs. △ Less

Submitted 26 June, 2020; originally announced June 2020.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. Research 3, 013275 (2021)

Orbital Magnetic Moment of Magnons

Authors: Robin R. Neumann, Alexander Mook, Jürgen Henk, Ingrid Mertig

Abstract: In experiments and applications usually the spin magnetic moment of magnons is considered. In this Paper we identify an additional degree of freedom of magnons: an \emph{orbital} magnetic moment brought about by spin-orbit coupling.Our microscopic theory uncovers that spin magnetization $\vec{M}^\mathrm{S}$ and orbital magnetization $\vec{M}^\mathrm{O}$ are independent quantities. They are not nec… ▽ More In experiments and applications usually the spin magnetic moment of magnons is considered. In this Paper we identify an additional degree of freedom of magnons: an \emph{orbital} magnetic moment brought about by spin-orbit coupling.Our microscopic theory uncovers that spin magnetization $\vec{M}^\mathrm{S}$ and orbital magnetization $\vec{M}^\mathrm{O}$ are independent quantities. They are not necessarily collinear; thus, even when the total spin moment is compensated due to antiferromagnetism ($\vec{M}^\mathrm{S} = \vec{0}$), $\vec{M}^\mathrm{O}$ may be nonzero. This scenario of orbital weak ferromagnetism is realized in paradigmatic kagome antiferromagnets with Dzyaloshinskii-Moriya interaction. We demonstrate that magnets exhibiting a magnonic orbital moment are omnipresent and propose transport experiments for probing it. △ Less

Submitted 19 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. Lett. 125, 117209 (2020)

Beyond skyrmions: Review and perspectives of alternative magnetic quasiparticles

Authors: Börge Göbel, Ingrid Mertig, Oleg A. Tretiakov

Abstract: Magnetic skyrmions have attracted enormous research interest since their discovery a decade ago. The non-trivial real-space topology of these nano-whirls leads to fundamentally interesting and technologically relevant consequences - the skyrmion Hall effect of the texture and the topological Hall effect of the electrons. Furthermore, it grants skyrmions in a ferromagnetic surrounding great stabili… ▽ More Magnetic skyrmions have attracted enormous research interest since their discovery a decade ago. The non-trivial real-space topology of these nano-whirls leads to fundamentally interesting and technologically relevant consequences - the skyrmion Hall effect of the texture and the topological Hall effect of the electrons. Furthermore, it grants skyrmions in a ferromagnetic surrounding great stability even at small sizes, making skyrmions aspirants to become the carriers of information in the future. Still, the utilization of skyrmions in spintronic devices has not been achieved yet, among other reasons, due to shortcomings in their current-driven motion. In this review, we present recent trends in the field of topological spin textures that go beyond skyrmions. The majority of these objects can be considered a combination of multiple subparticles, such as the bimeron, or the skyrmion analogues in different magnetic surroundings, such as antiferromagnetic skyrmions, as well as three-dimensional generalizations, such as hopfions. We classify the alternative magnetic quasiparticles - some of them observed experimentally, others theoretical predictions - and present the most relevant and auspicious advantages of this emerging field. △ Less

Submitted 18 October, 2020; v1 submitted 4 May, 2020; originally announced May 2020.

Comments: 33 pages, 10 figures

Journal ref: Physics Reports 895, 1 (2021)

Perovskite-type cobalt oxide at the multiferroic Co/Pb Zr$_{0.2}$Ti$_{0.8}$O$_{3}$ interface

Authors: K. Mohseni, A. Polyakov, H. B. Vasili, I. V. Maznichenko, S. Ostanin, A. Quindeau, N. Jedrecy, E. Fonda, L. V. Bekenov, V. N. Antonov, P. Gargani, M. Valvidares, I. Mertig, S. S. P. Parkin, A. Ernst, H. L. Meyerheim

Abstract: Magnetic Tunnel Junctions whose basic element consists of two ferromagnetic electrodes separated by an insulating non-magnetic barrier have become intensely studied and used in non-volatile spintronic devices. Since ballistic tunnel of spin-polarized electrons sensitively depends on the chemical composition and the atomic geometry of the lead/barrier interfaces their proper design is a key issue f… ▽ More Magnetic Tunnel Junctions whose basic element consists of two ferromagnetic electrodes separated by an insulating non-magnetic barrier have become intensely studied and used in non-volatile spintronic devices. Since ballistic tunnel of spin-polarized electrons sensitively depends on the chemical composition and the atomic geometry of the lead/barrier interfaces their proper design is a key issue for achieving the required functionality of the devices such as e.g. a high tunnel magneto resistance. An important leap in the development of novel spintronic devices is to replace the insulating barrier by a ferroelectric which adds new additional functionality induced by the polarization direction in the barrier giving rise to the tunnel electro resistance (TER). The multiferroic tunnel junction Co/PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$/La$_{2/3}$Sr$_{1/3}$MnO$_3$ (Co/PZT/LSMO) represents an archetype system for which - despite intense studies - no consensus exists for the interface geometry and their effect on transport properties. Here we provide the first analysis of the Co/PZT interface at the atomic scale using complementary techniques, namely x-ray diffraction and extended x-ray absorption fine structure in combination with x-ray magnetic circular dichroism and ab-initio calculations. The Co/PZT interface consists of one perovskite-type cobalt oxide unit cell [CoO$_{2}$/CoO/Ti(Zr)O$_{2}$] on which a locally ordered cobalt film grows. Magnetic moments (m) of cobalt lie in the range between m=2.3 and m=2.7$μ_{B}$, while for the interfacial titanium atoms they are small (m=+0.005 $μ_{B}$) and parallel to cobalt which is attributed to the presence of the cobalt-oxide interface layers. These insights into the atomistic relation between interface and magnetic properties is expected to pave the way for future high TER devices. △ Less

Submitted 1 April, 2020; originally announced April 2020.

Topological Hall signatures of magnetic hopfions

Authors: Börge Göbel, Collins Ashu Akosa, Gen Tatara, Ingrid Mertig

Abstract: Magnetic hopfions are topologically protected three-dimensional solitons that are constituted by a tube which exhibits a topologically nontrivial spin texture in the cross-section profile and is closed to a torus. Here we show that the hopfion's locally uncompensated emergent field leads to a topological Hall signature, although the topological Hall effect vanishes on the global level. The topolog… ▽ More Magnetic hopfions are topologically protected three-dimensional solitons that are constituted by a tube which exhibits a topologically nontrivial spin texture in the cross-section profile and is closed to a torus. Here we show that the hopfion's locally uncompensated emergent field leads to a topological Hall signature, although the topological Hall effect vanishes on the global level. The topological Hall signature is switchable by magnetic fields or electric currents and occurs independently of the anomalous and conventional Hall effects. It can therefore be exploited to electrically detect hopfions in experiments and even to distinguish them from other textures like skyrmion tubes. Furthermore, it can potentially be utilized in spintronic devices. Exemplarily, we propose a hopfion-based racetrack data storage device and simulate the electrical detection of the hopfions as carriers of information. △ Less

Submitted 16 March, 2020; originally announced March 2020.

Comments: 6 pages, 4 figures

Journal ref: Physical Review Research 2, 013315 (2020)

Compensated Quantum and Topological Hall Effects of Electrons in Polyatomic Stripe Lattices

Authors: Börge Göbel, Alexander Mook, Jürgen Henk, Ingrid Mertig

Abstract: The quantum Hall effect is generally understood for free electron gases, in which topologically protected edge states between Landau levels (LLs) form conducting channels at the edge of the sample. In periodic crystals, the LLs are imprinted with lattice properties; plateaus in the transverse Hall conductivity are not equidistant in energy anymore. Herein, crystals with a polyatomic basis are cons… ▽ More The quantum Hall effect is generally understood for free electron gases, in which topologically protected edge states between Landau levels (LLs) form conducting channels at the edge of the sample. In periodic crystals, the LLs are imprinted with lattice properties; plateaus in the transverse Hall conductivity are not equidistant in energy anymore. Herein, crystals with a polyatomic basis are considered. For a stripe arrangement of different atoms, the band structure resorts nontrivially and exhibits strong oscillations that form a salient pattern with very small bandgaps. The Hall conductivity strongly decreases for energies within these bands, and only sharp peaks remain for energies in the gap. These effects are traced back to open orbits in the initial band structure; the corresponding LLs are formed from states with positive and negative effective mass. The partial cancellation of transverse charge conductivity also holds for different polyatomic stripe lattices and even when the magnetic field is replaced by a topologically nontrivial spin texture. The topological Hall effect is suppressed in the presence of magnetic skyrmions. The discussion is complemented by calculations of Hofstadter butterflies and orbital magnetization. △ Less

Submitted 6 March, 2020; originally announced March 2020.

Comments: 12 pages, 15 figures

Journal ref: Phys. Status Solidi B 1900518 (2020)

Ab initio design of quaternary Heusler compounds for reconfigurable magnetic tunnel diodes and transistors

Authors: T. Aull, E. Şaşıoğlu, I. V. Maznichenko, S. Ostanin, A. Ernst, I. Mertig, I. Galanakis

Abstract: Reconfigurable magnetic tunnel diodes and transistors are a new concept in spintronics. The realization of such a device requires the use of materials with unique spin-dependent electronic properties such as half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to design within the same family of compounds HMMs and SGSs with simil… ▽ More Reconfigurable magnetic tunnel diodes and transistors are a new concept in spintronics. The realization of such a device requires the use of materials with unique spin-dependent electronic properties such as half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to design within the same family of compounds HMMs and SGSs with similar lattice constants to make coherent growth of the consecutive spacers of the device possible. Employing state-of-the-art first-principles calculations, we scan the quaternary Heusler compounds and identify suitable candidates for these spintronic devices combining the desirable properties: (i) HMMs with sizable energy gap or SGSs with spin gaps both below and above the Fermi level, (ii) high Curie temperature, (iii) convex hull energy distance less than 0.20 eV, and (iv) negative formation energies. Our results pave the way for the experimental realization of the proposed magnetic tunnel diodes and transistors. △ Less

Submitted 20 January, 2020; originally announced January 2020.

Comments: 13 pages, 9 figures

Journal ref: Phys. Rev. Materials 3, 124415 (2019)

The optical tweezer of ferroelectric skyrmions

Authors: X. -G. Wang, L. Chotorlishvili, V. K. Dugaev, A. Ernst, I. Maznichenko, N. Arnold, Chenglong Jia, J. Berakdar, I. Mertig, J. Barnaś

Abstract: Strong magneto-electric coupling in two-dimensional helical materials leads to a peculiar type of topologically protected solutions -- skyrmions. Coupling between the net ferroelectric polarization and magnetization allows control of the magnetic texture with an external electric field. In this work we propose the model of optical tweezer -- a particular configuration of an external electric field… ▽ More Strong magneto-electric coupling in two-dimensional helical materials leads to a peculiar type of topologically protected solutions -- skyrmions. Coupling between the net ferroelectric polarization and magnetization allows control of the magnetic texture with an external electric field. In this work we propose the model of optical tweezer -- a particular configuration of an external electric field and Gaussian laser beam that can trap or release the skyrmions in a highly controlled manner. Functionality of such a tweezer is visualized by micromagnetic simulations and model analysis. △ Less

Submitted 6 January, 2020; originally announced January 2020.

Origin of the Magnetic Spin Hall Effect: Spin Current Vorticity in the Fermi Sea

Authors: Alexander Mook, Robin R. Neumann, Annika Johansson, Jürgen Henk, Ingrid Mertig

Abstract: The interplay of spin-orbit coupling (SOC) and magnetism gives rise to a plethora of charge-to-spin conversion phenomena that harbor great potential for spintronics applications. In addition to the spin Hall effect, magnets may exhibit a magnetic spin Hall effect (MSHE), as was recently discovered [Kimata \textit{et al.}, Nature \textbf{565}, 627-630 (2019)]. To date, the MSHE is still awaiting it… ▽ More The interplay of spin-orbit coupling (SOC) and magnetism gives rise to a plethora of charge-to-spin conversion phenomena that harbor great potential for spintronics applications. In addition to the spin Hall effect, magnets may exhibit a magnetic spin Hall effect (MSHE), as was recently discovered [Kimata \textit{et al.}, Nature \textbf{565}, 627-630 (2019)]. To date, the MSHE is still awaiting its intuitive explanation. Here we relate the MSHE to the vorticity of spin currents in the Fermi sea, which explains pictorially the origin of the MSHE. For all magnetic Laue groups that allow for nonzero spin current vorticities the related tensor elements of the MSH conductivity are given. Minimal requirements for the occurrence of a MSHE are compatibility with either a magnetization or a magnetic toroidal quadrupole. This finding implies in particular that the MSHE is expected in all ferromagnets with sufficiently large SOC. To substantiate our symmetry analysis, we present various models, in particular a two-dimensional magnetized Rashba electron gas, that corroborate an interpretation by means of spin current vortices. Considering thermally induced spin transport and the magnetic spin Nernst effect in magnetic insulators, which are brought about by magnons, our findings for electron transport can be carried over to the realm of spincaloritronics, heat-to-spin conversion, and energy harvesting. △ Less

Submitted 29 October, 2019; originally announced October 2019.

Journal ref: Phys. Rev. Research 2, 023065 (2020)

Unconventional charge-spin conversion in Weyl-semimetal WTe2

Authors: Bing Zhao, Bogdan Karpiak, Dmitrii Khokhriakov, Annika Johansson, Anamul Md. Hoque, Xiaoguang Xu, Yong Jiang, Ingrid Mertig, Saroj P. Dash

Abstract: An outstanding feature of topological quantum materials is their novel spin topology in the electronic band structures with an expected large charge-to-spin conversion efficiency. Here, we report a charge current-induced spin polarization in the type-II Weyl semimetal candidate WTe2 and efficient spin injection and detection in a graphene channel up to room temperature. Contrary to the conventiona… ▽ More An outstanding feature of topological quantum materials is their novel spin topology in the electronic band structures with an expected large charge-to-spin conversion efficiency. Here, we report a charge current-induced spin polarization in the type-II Weyl semimetal candidate WTe2 and efficient spin injection and detection in a graphene channel up to room temperature. Contrary to the conventional spin Hall and Rashba-Edelstein effects, our measurements indicate an unconventional charge-to-spin conversion in WTe2, which is primarily forbidden by the crystal symmetry of the system. Such a large spin polarization can be possible in WTe2 due to a reduced crystal symmetry combined with its large spin Berry curvature, spin-orbit interaction with a novel spin-texture of the Fermi states. We demonstrate a robust and practical method for electrical creation and detection of such a spin polarization using both charge-to-spin conversion and its inverse phenomenon and utilized it for efficient spin injection and detection in a graphene channel up to room temperature. These findings open opportunities for utilizing topological Weyl materials as non-magnetic spin sources in allelectrical van der Waals spintronic circuits and for low-power and high-performance non-volatile spintronic technologies. △ Less

Submitted 7 August, 2020; v1 submitted 14 October, 2019; originally announced October 2019.

Journal ref: Advanced Materials 2020