Simulated Charge Stability in a MOSFET Linear Quantum Dot Array
Authors:
Zach D. Merino,
Bohdan Khromets,
Jonathan Baugh
Abstract:
In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a realistic double QD device geometry. These methods generaize to linear QD arrays, and are based on determining the effective parameters of a Hubbard model Hamiltonian t…
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In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a realistic double QD device geometry. These methods generaize to linear QD arrays, and are based on determining the effective parameters of a Hubbard model Hamiltonian that is then diagonalized to find the many-electron ground state energy. These calculations enable the identification of gate voltage ranges that maintain desired charge states during qubit manipulation, and also account for electrical cross-talk between QDs. As a result, the methods presented here promise to be a valuable tool for develo** scalable spin qubit quantum processors.
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Submitted 23 February, 2024;
originally announced February 2024.
Hamiltonian engineering with time-ordered evolution for unitary control of electron spins in semiconductor quantum dots
Authors:
Bohdan Khromets,
Zach D. Merino,
Jonathan Baugh
Abstract:
We present a unitary control pulse design method for a scalable quantum computer architecture based on electron spins in lateral quantum dots. We employ simultaneous control of spin interactions and derive the functional forms of spin Hamiltonian parameter pulses for a universal set of 1- and 2-qubit logic gates. This includes selective spin rotations with the weak local g-factor variations in the…
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We present a unitary control pulse design method for a scalable quantum computer architecture based on electron spins in lateral quantum dots. We employ simultaneous control of spin interactions and derive the functional forms of spin Hamiltonian parameter pulses for a universal set of 1- and 2-qubit logic gates. This includes selective spin rotations with the weak local g-factor variations in the presence of the global oscillating field, and a Control-Phase operation with the simultaneous control of g-factors and exchange couplings. We outline how to generalize the control scheme to multiqubit gate operations and the case of constrained or imperfect control of the Hamiltonian parameters.
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Submitted 12 February, 2024;
originally announced February 2024.
Stable electroluminescence in ambipolar dopant-free lateral p-n junctions
Authors:
Lin Tian,
Francois Sfigakis,
Arjun Shetty,
Ho-Sung Kim,
Nachiket Sherlekar,
Sara Hosseini,
Man Chun Tam,
Brad van Kasteren,
Brandon Buonacorsi,
Zach Merino,
Stephen R. Harrigan,
Zbigniew Wasilewski,
Jonathan Baugh,
Michael E. Reimer
Abstract:
Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been unwanted charge accumulation at the p-n junction gap that suppr…
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Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been unwanted charge accumulation at the p-n junction gap that suppresses light emission, either due to enhanced non-radiative recombination or inhibition of p-n current. Typically, samples must frequently be warmed to room temperature to dissipate this built-up charge and restore light emission in a subsequent cooldown. Here, we introduce a practical gate voltage protocol that clears this parasitic charge accumulation, in-situ at low temperature, enabling the indefinite cryogenic operation of devices. This reset protocol enabled the optical characterization of stable, bright, dopant-free lateral p-n junctions with electroluminescence linewidths among the narrowest (< 1 meV; < 0.5 nm) reported in this type of device. It also enabled the unambiguous identification of the ground state of neutral free excitons (heavy and light holes), as well as charged excitons (trions). The free exciton emission energies for both photoluminescence and electroluminescence are found to be nearly identical (within 0.2 meV or 0.1 nm). The binding and dissociation energies for free and charged excitons are reported. A free exciton lifetime of 237 ps was measured by time-resolved electroluminescence, compared to 419 ps with time-resolved photoluminescence.
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Submitted 15 August, 2023; v1 submitted 19 June, 2023;
originally announced June 2023.
