A highly integrated, stand-alone photoelectrochemical device for large-scale solar hydrogen production
Authors:
Minoh Lee,
Bugra Turan,
Jan-Philipp Becker,
Katharina Welter,
Benjamin Klingebiel,
Elmar Neumann,
Yoo Jung Sohn,
Tsvetelina Merdzhanova,
Thomas Kirchartz,
Friedhelm Finger,
Uwe Rau,
Stefan Haas
Abstract:
Although photoelectrochemical water splitting is likely to be an important and powerful tool to provide environmentally friendly hydrogen, most developments in this field have been conducted on a laboratory scale so far. In order for the technology to make a sizeable impact on the energy transition, scaled up devices made of inexpensive and earth abundant materials must be developed. In this work,…
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Although photoelectrochemical water splitting is likely to be an important and powerful tool to provide environmentally friendly hydrogen, most developments in this field have been conducted on a laboratory scale so far. In order for the technology to make a sizeable impact on the energy transition, scaled up devices made of inexpensive and earth abundant materials must be developed. In this work, we demonstrate a scalable (64 cm2 aperture area) artificial photoelectrochemical device composed of triple-junction thin-film silicon solar cells in conjunction with an electrodeposited bifunctional nickel iron molybdenum water splitting catalyst. Our device shows a solar to hydrogen efficiency of up to 4.67% (5.33% active area) without bias assistance and wire connection. Furthermore, gas separation was enabled by incorporating a membrane in a 3D printed device frame.
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Submitted 30 October, 2019;
originally announced October 2019.
Strain selectivity of SiGe wet chemical etchants
Authors:
M. Stoffel,
A. Malachias,
T. Merdzhanova,
F. Cavallo,
G. Isella,
D. Chrastina,
H. von Kaenel,
A. Rastelli,
O. G. Schmidt
Abstract:
We investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain selectivity, i.e. the etching rates do not depend on the actual strain state in the SiGe films. Instead, for the NH4OH:H2O2 solution, the rates are primarily determined by the Ge content. Finally, we show that both etchants…
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We investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain selectivity, i.e. the etching rates do not depend on the actual strain state in the SiGe films. Instead, for the NH4OH:H2O2 solution, the rates are primarily determined by the Ge content. Finally, we show that both etchants are isotropic with no preferential etching of particular facets.
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Submitted 28 January, 2008;
originally announced January 2008.
