Showing 1–16 of 16 results for author: Menzio, L

First test beam measurement of the 4D resolution of an RSD 450 microns pitch pixel matrix connected to a FAST2 ASIC

Authors: L. Menzio, F. Siviero, R. Arcidiacono, N. Cartiglia, M. Costa, T. Croci, M. Ferrero, C. Hanna, L. Lanteri, S. Mazza, R. Mulargiaa, H-F W. Sadrozinski, A. Seiden, V. Sola, R. Whitea, M. Wilder

Abstract: This paper reports on the spatial and temporal resolutions of an RSD 450 microns pitch pixels array measured at the DESY test beam facility. RSDs, Resistive Silicon Detectors, also known as AC-LGAD, achieve excellent position and temporal resolution by exploiting charge sharing among neighboring electrodes. The RSD matrix used in this study is part of the second FBK RSD production, RSD2, and it is… ▽ More This paper reports on the spatial and temporal resolutions of an RSD 450 microns pitch pixels array measured at the DESY test beam facility. RSDs, Resistive Silicon Detectors, also known as AC-LGAD, achieve excellent position and temporal resolution by exploiting charge sharing among neighboring electrodes. The RSD matrix used in this study is part of the second FBK RSD production, RSD2, and it is composed of 450 microns pitch pixel with cross-shaped electrodes. A 7-pixel matrix was read out by the FAST2 ASIC, a 16-channel amplifier fully custom ASIC developed by INFN Torino using the 110 nm CMOS technology. The total area covered by the matrix is about 1.5 mm$^2$. The position resolution reached in this test is 15 microns, about 4\% of the pitch. The temporal resolution achieved in this work is 60 ps, dominated by the FAST2 resolution. The work also demonstrates that RSD sensors with cross-shaped electrodes achieve 100% fill factor and homogenous resolutions over the whole matrix surface, making them a suitable choice for 4D tracking applications. △ Less

Submitted 17 February, 2024; v1 submitted 2 February, 2024; originally announced February 2024.

Comments: 33 pages, 21 figures

A new Low Gain Avalanche Diode concept: the double-LGAD

Authors: F. Carnesecchi, S. Strazzi, A. Alici, R. Arcidiacono, N. Cartiglia, D. Cavazza, S. Durando, M. Ferrero, A. Margotti, L. Menzio, R. Nania, B. Sabiu, G. Scioli, F. Siviero, V. Sola, G. Vignola

Abstract: This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, kee** a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25… ▽ More This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, kee** a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 \textmu{m}, 35 \textmu{m} and 50 \textmu{m}. △ Less

Submitted 26 July, 2023; originally announced July 2023.

Comments: arXiv admin note: text overlap with arXiv:2208.05717

Resistive Read-out in Thin Silicon Sensors with Internal Gain

Authors: N. Cartiglia, F. Moscatelli, R. Arcidiacono, P. Asenov, M. Costa, T. Croci, M. Ferrero, A. Fondacci, L. Lanteri, L. Menzio, A. Morozzi, R. Mulargia, D. Passeri, F. Siviero, V. Sola, M. Tornago

Abstract: Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain mechanism, lead to improved temporal precision, while charge sharing, introduced by resistive read-out, allows for achieving excellent spatial resolution even with l… ▽ More Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain mechanism, lead to improved temporal precision, while charge sharing, introduced by resistive read-out, allows for achieving excellent spatial resolution even with large pixels. LGAD- and RSD- based silicon sensors are now adopted, or considered, in several future experiments and are the basis for almost every next 4D-trackers. New results obtained with sensors belonging to the second FBK production of RSD (RSD2) demonstrate how a combined resolution of 30 ps and 30 \microns can be obtained with pixels as large as $1 \times 1 $ mm$^2$. △ Less

Submitted 7 January, 2023; originally announced January 2023.

Comments: 8 pages, 7 figures

High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors

Authors: R. Arcidiacono, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignali, M. Costa, G-F. Dalla Betta, M. Ferrero, F. Ficorella, G. Gioachin, L. Lanteri, M. Mandurrino, L. Menzio, R. Mulargia, L. Pancheri, G. Paternoster, A. Rojas, H-F W. Sadrozinski, A. Seiden, F. Siviero, V. Sola, M. Tornago

Abstract: The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sen… ▽ More The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sensors from the second RSD production at the Fondazione Bruno Kessler. The paper first introduces the parametrization of the errors in the determination of the position and time coordinates in RSD, then outlines the reconstruction method, and finally presents the results. Three different pixel sizes are used in the analysis: 200 x 340, 450 x 450, and 1300 x 1300 microns^2. At gain = 30, the 450 x 450 microns^2 pixel achieves a time jitter of 20 ps and a spatial resolution of 15 microns concurrently, while the 1300 x 1300 microns^2 pixel achieves 30 ps and 30 micron, respectively. The implementation of cross-shaped electrodes improves considerably the response uniformity over the pixel surface. △ Less

Submitted 24 November, 2022; originally announced November 2022.

Comments: 28 pages, 23 figures submitted to NIMA

A Compensated Design of the LGAD Gain Layer

Authors: Valentina Sola, Roberta Arcidiacono, Patrick Asenov, Giacomo Borghi, Maurizio Boscardin, Nicolò Cartiglia, Matteo Centis Vignali, Tommaso Croci, Marco Ferrero, Alessandro Fondacci, Giulia Gioachin, Simona Giordanengo, Leonardo Lantieri, Marco Mandurrino, Luca Menzio, Vincenzo Monaco, Arianna Morozzi, Francesco Moscatelli, Daniele Passeri, Nadia Pastrone, Giovanni Paternoster, Federico Siviero, Amedeo Staiano, Marta Tornago

Abstract: In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim… ▽ More In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p$^+$ and an n$^+$ implants: the difference between acceptor and donor do** will result in an effective concentration of about 5E16/cm$^3$, similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of $\sim$ 1-2E15/cm$^2$, and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm$^2$. △ Less

Submitted 1 September, 2022; originally announced September 2022.

Comments: Keywords: Silicon sensor, LGAD, Compensation, Compensated LGAD, Gain layer, 4D tracking, Radiation hardness

Journal ref: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 1040, 2022, 167232

Silicon sensors with resistive read-out: Machine Learning techniques for ultimate spatial resolution

Authors: Marta Tornago, Flavio Giobergia, Luca Menzio, Federico Siviero, Roberta Arcidiacono, Nicolò Cartiglia, Marco Costa, Marco Ferrero, Giulia Gioachin, Marco Mandurrino, Valentina Sola

Abstract: Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode design aimed at maximizing signal sharing, RSD2, the second RSD production by Fondazione Bruno Kessler (FBK), achieves a position resolution on the whole pixel surfa… ▽ More Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode design aimed at maximizing signal sharing, RSD2, the second RSD production by Fondazione Bruno Kessler (FBK), achieves a position resolution on the whole pixel surface of about 8 $μm$ for 200-$μm$ pitch. RSD2 arrays have been tested using a Transient Current Technique setup equipped with a 16-channel digitizer, and results on spatial resolution have been obtained with machine learning algorithms. △ Less

Submitted 2 November, 2022; v1 submitted 17 August, 2022; originally announced August 2022.

Comments: 2 pages, 2 figure

Beam test results of 25 $μ$m and 35 $μ$m thick FBK UFSD]{Beam test results of 25 $μ$m and 35 $μ$m thick FBK ultra fast silicon detectors

Authors: F. Carnesecchi, S. Strazzi, A. Alici, R. Arcidiacono, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignali, D. Cavazza, G. -F. Dalla Betta, S. Durando, M. Ferrero, F. Ficorella, O. Hammad Ali, M. Mandurrino, A. Margotti, L. Menzio, R. Nania, L. Pancheri, G. Paternoster, G. Scioli, F. Siviero, V. Sola, M. Tornago, G. Vignola

Abstract: This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick… ▽ More This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 V and 240 V has been obtained for the 25 and 35 $μ$m thick UFSDs, respectively. △ Less

Submitted 11 August, 2022; originally announced August 2022.

DC-coupled resistive silicon detectors for 4-D tracking

Authors: L. Menzio, R. Arcidiacono, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignali, M. Costa, G-F. Dalla Betta, M. Ferrero, F. Ficorella, G. Gioachin, M. Mandurrino, L. Pancheri, G. Paternoster, F. Siviero, V. Sola, M. Tornago

Abstract: In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key feat… ▽ More In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key features of the RSD design are maintained, yielding excellent timing and spatial resolutions: a few tens of ps and a few microns. In the presentation, we will outline the optimization methodology and the results of the simulation. We will present detailed studies on the effect of changing the ratio between the n+ layer resistivity and the low-resistivity ring and on the achievable temporal and spatial resolution. △ Less

Submitted 14 April, 2022; originally announced April 2022.

4D Tracking: Present Status and Perspective

Authors: N. Cartiglia, R. Arcidiacono, M. Costa, M. Ferrero, G. Gioachin, M. Mandurrino, L. Menzio, F. Siviero, V. Sola, M. Tornago

Abstract: The past ten years have seen the advent of silicon-based precise timing detectors for charged particle tracking. The underlying reason for this evolution is a design innovation: the Low-Gain Avalanche Diode (LGAD). In its simplicity, the LGAD design is an obvious step with momentous consequences: low gain leads to large signals maintaining sensors stability and low noise, allowing sensor segmentat… ▽ More The past ten years have seen the advent of silicon-based precise timing detectors for charged particle tracking. The underlying reason for this evolution is a design innovation: the Low-Gain Avalanche Diode (LGAD). In its simplicity, the LGAD design is an obvious step with momentous consequences: low gain leads to large signals maintaining sensors stability and low noise, allowing sensor segmentation. Albeit introduced for a different reason, to compensate for charge trap** in irradiated silicon sensors, LGAD found fertile ground in the design of silicon-based timing detectors. Spurred by this design innovation, solid-state-based timing detectors for charged particles are going through an intense phase of R&D, and hybrid and monolithic sensors, with or without internal gain, are being explored. This contribution offers a review of this booming field. △ Less

Submitted 11 July, 2022; v1 submitted 13 April, 2022; originally announced April 2022.

Comments: 10 pages, 11 figures double column, VCI2022

First experimental results of the spatial resolution of RSD pad arrays read out with a 16-ch board

Authors: F. Siviero, F. Giobergia, L. Menzio, F. Miserocchi, M. Tornago, R. Arcidiacono, N. Cartiglia, M. Costa, M. Ferrero, G. Gioachin, M. Mandurrino, V. Sola

Abstract: Resistive Silicon Detectors (RSD, also known as AC-LGAD) are innovative silicon sensors, based on the LGAD technology, characterized by a continuous gain layer that spreads across the whole sensor active area. RSDs are very promising tracking detectors, thanks to the combination of the built-in signal sharing with the internal charge multiplication, which allows large signals to be seen over multi… ▽ More Resistive Silicon Detectors (RSD, also known as AC-LGAD) are innovative silicon sensors, based on the LGAD technology, characterized by a continuous gain layer that spreads across the whole sensor active area. RSDs are very promising tracking detectors, thanks to the combination of the built-in signal sharing with the internal charge multiplication, which allows large signals to be seen over multiple read-out channels. This work presents the first experimental results obtained from a 3$\times$4 array with 200~\mum~pitch, coming from the RSD2 production manufactured by FBK, read out with a 16-ch digitizer. A machine learning model has been trained, with experimental data taken with a precise TCT laser setup, and then used to predict the laser shot positions, finding a spatial resolution of $\sim$~5.5~\mum. △ Less

Submitted 13 April, 2022; originally announced April 2022.

Optimization of the Gain Layer Design of Ultra-Fast Silicon Detectors

Authors: Federico Siviero, Roberta Arcidiacono, Giacomo Borghi, Maurizio Boscardin, Nicolo Cartiglia, Matteo Centis Vignali, Marco Costa, Gian Franco Dalla Betta, Marco Ferrero, Francesco Ficorella, Giulia Gioachin, Marco Mandurrino, Simone Mazza, Luca Menzio, Lucio Pancheri, Giovanni Paternoster, Hartmut F. W. Sadrozinski, Abraham Seiden, Valentina Sola, Marta Tornago

Abstract: In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been… ▽ More In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been proposed and adopted by the CMS and ATLAS collaborations for their respective timing layers. The defining feature of the Ultra-Fast Silicon Detectors (UFSDs) is the internal multiplication mechanism, determined by the gain layer design. In this paper, the performances of several types of gain layers, measured with a telescope instrumented with a $^{90}$Sr $β$-source, are reported and compared. The measured sensors are produced by Fondazione Bruno Kessler (FBK) and Hamamatsu Photonics (HPK). The sensor yielding the best performance, both when new and irradiated, is an FBK 45\mum-thick sensor with a carbonated deep gain implant, where the carbon and the boron implants are annealed concurrently with a low thermal load. This sensor is able to achieve a time resolution of 40~ps up to a radiation fluence of~\fluence{2.5}{15}, delivering at least 5~fC of charge. △ Less

Submitted 8 March, 2022; v1 submitted 1 December, 2021; originally announced December 2021.

Comments: v3 revised version as requested by Editor

The second production of RSD (AC-LGAD) at FBK

Authors: M. Mandurrino, R. Arcidiacono, A. Bisht, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignali, G. -F. Dalla Betta, M. Ferrero, F. Ficorella, O. Hammad Ali, A. D. Martinez Rojas, L. Menzio, L. Pancheri, G. Paternoster, F. Siviero, V. Sola, M. Tornago

Abstract: In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a c… ▽ More In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a continuous gain implant, (ii) a resistive n-cathode and (iii) a dielectric coupling layer deposited on top, guaranteeing a good spatial reconstruction of the hit position while benefiting from the good timing properties of LGADs. We will start from the very promising results of our RSD1 batch in terms of tracking performances and then we will move to the description of the design of the RSD2 run. In particular, the principles driving the sensor design and the specific AC-electrode layout adopted to optimize the signal confinement will be addressed. △ Less

Submitted 8 June, 2022; v1 submitted 28 November, 2021; originally announced November 2021.

First Results with the ANET Compact Thermal Neutron Collimator

Authors: Oriol Sans-Planell, Marco Costa, Elisabetta Durisi, Ettore Mafucci, Luca Menzio, Valeria Monti, Lorenzo Visca, Francesco Grazzi, Roberto Bedogni, Saverio Altieri

Abstract: This paper presents the first determination of the spatial resolution of the ANET Compact Neutron Collimator, obtained with a measuring campaign at the LENA Mark-II TRIGA reactor in Pavia. This novel collimator consists of a sequence of collimating and absorbing channels organised in a chessboard-like geometry. It has a scalable structure both in length and in the field of view. It is characterize… ▽ More This paper presents the first determination of the spatial resolution of the ANET Compact Neutron Collimator, obtained with a measuring campaign at the LENA Mark-II TRIGA reactor in Pavia. This novel collimator consists of a sequence of collimating and absorbing channels organised in a chessboard-like geometry. It has a scalable structure both in length and in the field of view. It is characterized by an elevated collimation power within a limited length. Its scalability and compactness are added values with respect to traditional collimating system. The prototype tested in this article is composed of 4 concatenated stages, each 100mm long, with a channel width of 2.5mm, delivering a nominal L/D factor of 160. This measuring campaign illustrates the use of the ANET collimator and its potential application in neutron imaging for facilities with small or medium size neutron sources. △ Less

Submitted 18 October, 2021; originally announced October 2021.

Comments: 9 pages, 8 figures, prepared for submission to JINST

Design of a novel compact neutron collimator

Authors: Roberto Bedogni, Marco Costa, Elisabetta Durisi, Francesco Grazzi, Alessandro Lega, Ettore Mafucci, Luca Menzio, Valeria Monti, Oriol Sans-Planell, Lorenzo Visca

Abstract: In this work the concept of a novel slow neutron collimator and the way to operate it are presented. The idea is based on the possibility to decouple the device field-of-view from its collimation power. A multi-channel geometry is proposed consisting of a chess-board structure where highly neutron-absorbing channels are alternated to air channels. A borated polymer was purposely developed to produ… ▽ More In this work the concept of a novel slow neutron collimator and the way to operate it are presented. The idea is based on the possibility to decouple the device field-of-view from its collimation power. A multi-channel geometry is proposed consisting of a chess-board structure where highly neutron-absorbing channels are alternated to air channels. A borated polymer was purposely developed to produce the attenuating components in the form of square-sectioned long rods. A scalable structure consisting of multiple collimation sectors can be arranged. The geometrical parameter LD, corresponding to the ratio between the length of a channel and its width, defines the collimation power. Several sectors can be arranged one after the other to reach relevant collimation powers. Each sector, 100 mm long, is composed by several channels with D = 2.5 mm corresponding to an L/D coefficient of 40. The target field of view is 50x50 mm2. This novel collimator, developed inside the INFN-ANET collaboration, due to its intrinsic compactness, will be of great importance to enhance the neutron imaging capability of small to medium-size neutron sources. △ Less

Submitted 6 August, 2021; originally announced August 2021.

Comments: 8 pages, 5 figures, accepted for publication to JINST

Development of gamma insensitive silicon carbide diagnostics to qualify intense thermal and epithermal neutron fields

Authors: O. Sans Planell, M. Costa, E. Durisi, A. Lega, E. Mafucci, L. Menzio, V. Monti, L. Visca, R. Bedogni, M. Treccani, A. Pola, D. Bortot, K. Alikaniotis, G. Giannini, J. M. Gomez-Ros

Abstract: The e_LiBANS project aims at creating accelerator based compact neutron facilities for diverse interdisciplinary applications. After the successful setting up and characterization of a thermal neutron source based on a medical electron LINAC, a similar assembly for epithermal neutrons has been developed. The project is based on an Elekta 18 MV LINAC coupled with a photoconverter-moderator system w… ▽ More The e_LiBANS project aims at creating accelerator based compact neutron facilities for diverse interdisciplinary applications. After the successful setting up and characterization of a thermal neutron source based on a medical electron LINAC, a similar assembly for epithermal neutrons has been developed. The project is based on an Elekta 18 MV LINAC coupled with a photoconverter-moderator system which deploys the (γ,n) photonuclear reaction to convert a bremsstrahlung photon beam into a neutron field. This communication describes the development of novel diagnostics to qualify the thermal and epithermal neutron fields that have been produced. In particular, a proof of concept for the use of silicon carbide photodiodes as a thermal neutron rate detector is presented. △ Less

Submitted 17 April, 2020; originally announced April 2020.

Comments: 10 pages, 10 figures, accepted for publication to JINST on the 17th April 2020

The e_LiBANS facility: a new compact thermal neutron source based on a medical electron LINAC

Authors: Valeria Monti, Marco Costa, Elisabetta Durisi, Ettore Mafucci, Luca Menzio, Oriol Sans-Planell, Lorenzo Visca, Roberto Bedogni, Matteo Treccani, Andrea Pola, Davide Bortot, Katia Alikaniotis, Gianrossano Giannini, Jose Maria Gomez-Ros

Abstract: A new photonuclear thermal neutron facility has been developed at the Physics Department of University of Torino. The facility is based on a medical electron LINAC coupled to a compact converter and moderator assembly. A homogenous thermal neutron field of the order of 10$^6$ cm$^{-2}$s$^{-1}$ is achievable in the enclosed irradiation cavity with low gamma and fast neutron contaminations. Its inte… ▽ More A new photonuclear thermal neutron facility has been developed at the Physics Department of University of Torino. The facility is based on a medical electron LINAC coupled to a compact converter and moderator assembly. A homogenous thermal neutron field of the order of 10$^6$ cm$^{-2}$s$^{-1}$ is achievable in the enclosed irradiation cavity with low gamma and fast neutron contaminations. Its intensity can be tuned varying the LINAC current. These characteristics make the source appropriate for several applications like detectors development, material studies and BNCT preclinical research. This work describes the project and the experimental characterization of the facility. This includes the measurement of the thermal neutron fluence rate, the determination of the neutron energy spectrum and of the thermal neutron field uniformity and the evaluation of the gamma contamination. △ Less

Submitted 2 September, 2019; originally announced September 2019.

Comments: 15 pages, 6 figures. Submitted to Nuclear Instruments and Methods in Physics Research A (2019)